TWI624565B - Etching solution for multilayer film, etching concentrate, and etching method - Google Patents

Etching solution for multilayer film, etching concentrate, and etching method Download PDF

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Publication number
TWI624565B
TWI624565B TW103137155A TW103137155A TWI624565B TW I624565 B TWI624565 B TW I624565B TW 103137155 A TW103137155 A TW 103137155A TW 103137155 A TW103137155 A TW 103137155A TW I624565 B TWI624565 B TW I624565B
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TW
Taiwan
Prior art keywords
mass
acid
etching
hydrogen peroxide
etching solution
Prior art date
Application number
TW103137155A
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English (en)
Chinese (zh)
Other versions
TW201533272A (zh
Inventor
Makoto Chakuno
Yoshihide Kosano
Shinichirou Fuchigami
Original Assignee
Panasonic Ip Man Co Ltd
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Application filed by Panasonic Ip Man Co Ltd filed Critical Panasonic Ip Man Co Ltd
Publication of TW201533272A publication Critical patent/TW201533272A/zh
Application granted granted Critical
Publication of TWI624565B publication Critical patent/TWI624565B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
TW103137155A 2013-11-25 2014-10-28 Etching solution for multilayer film, etching concentrate, and etching method TWI624565B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/006915 WO2015075765A1 (ja) 2013-11-25 2013-11-25 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Publications (2)

Publication Number Publication Date
TW201533272A TW201533272A (zh) 2015-09-01
TWI624565B true TWI624565B (zh) 2018-05-21

Family

ID=53179075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103137155A TWI624565B (zh) 2013-11-25 2014-10-28 Etching solution for multilayer film, etching concentrate, and etching method

Country Status (4)

Country Link
JP (1) JP6128404B2 (ja)
CN (1) CN105765107B (ja)
TW (1) TWI624565B (ja)
WO (1) WO2015075765A1 (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
JP6167444B1 (ja) * 2016-09-09 2017-07-26 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN108018556A (zh) * 2016-10-31 2018-05-11 易案爱富科技有限公司 蚀刻组合物
KR102404226B1 (ko) * 2016-10-31 2022-06-02 주식회사 이엔에프테크놀로지 식각 조성물
CN108130535B (zh) * 2016-12-01 2020-04-14 添鸿科技股份有限公司 钛钨合金的蚀刻液
CN107012465B (zh) * 2017-03-28 2019-09-03 江苏和达电子科技有限公司 一种铜蚀刻液及其应用
CN109280919B (zh) * 2017-07-20 2020-11-24 添鸿科技股份有限公司 含铜金属用的蚀刻剂组成物
CN108570678B (zh) * 2018-04-13 2021-01-26 惠州达诚微电子材料有限公司 一种应用于铜钼膜层的金属蚀刻液
CN108505042A (zh) * 2018-05-23 2018-09-07 深圳市百诣良科技发展有限公司 一种pcb用高速减薄铜液及制备方法
CN108893741A (zh) * 2018-06-12 2018-11-27 江苏理工学院 一种应用于薄膜晶体管线路的无氟铜钼蚀刻液
CN108950557A (zh) * 2018-07-19 2018-12-07 深圳市华星光电半导体显示技术有限公司 一种铜/钼蚀刻液组合物及其应用
CN109082663A (zh) * 2018-07-19 2018-12-25 深圳市华星光电半导体显示技术有限公司 一种铜/钼蚀刻液组合物及其应用
WO2020105605A1 (ja) * 2018-11-20 2020-05-28 三菱瓦斯化学株式会社 銅および銅合金を選択的にエッチングするためのエッチング液およびそれを用いた半導体基板の製造方法
CN111117626B (zh) * 2019-12-28 2021-06-22 苏州天承化工有限公司 一种闪蚀药水及其制备方法和应用
EP4136273A4 (en) 2020-04-14 2024-05-01 Entegris Inc METHOD AND COMPOSITION FOR ETCHING MOLYBDENUM
US11756797B2 (en) * 2020-04-15 2023-09-12 Tcl China Star Optoelectronics Technology Co., Ltd. Etching method of copper-molybdenum film and array substrate
CN111850561B (zh) * 2020-07-29 2022-07-15 珠海市板明科技有限公司 一种硫酸双氧水体系的蚀铜加速剂及蚀刻药水
CN112351593B (zh) * 2020-11-16 2022-07-12 珠海联鼎化工设备有限公司 一种印制电路板osp微蚀前处理液及微蚀方法
CN113026018B (zh) * 2021-03-01 2022-11-22 四川江化微电子材料有限公司 一种铜钼合金的蚀刻液组合物及蚀刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201012971A (en) * 2008-09-26 2010-04-01 Techno Semichem Co Ltd Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in liquid crystal display system
TW201137176A (en) * 2010-02-15 2011-11-01 Mitsubishi Gas Chemical Co Etching liquid for multilayer thin films containing copper and molybdenum layers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379824B1 (ko) * 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
CN101771072A (zh) * 2010-02-23 2010-07-07 友达光电股份有限公司 主动元件阵列基板及其制作方法
US9365770B2 (en) * 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
JP2013060634A (ja) * 2011-09-14 2013-04-04 Tosoh Corp エッチング液

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201012971A (en) * 2008-09-26 2010-04-01 Techno Semichem Co Ltd Cu or Cu/Mo or Cu/Mo alloy electrode etching liquid in liquid crystal display system
TW201137176A (en) * 2010-02-15 2011-11-01 Mitsubishi Gas Chemical Co Etching liquid for multilayer thin films containing copper and molybdenum layers

Also Published As

Publication number Publication date
WO2015075765A1 (ja) 2015-05-28
JP6128404B2 (ja) 2017-05-17
CN105765107B (zh) 2017-12-19
CN105765107A (zh) 2016-07-13
JPWO2015075765A1 (ja) 2017-03-16
TW201533272A (zh) 2015-09-01

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