TWI622158B - 儲存元件，儲存裝置，製造儲存元件之方法，及磁頭 - Google Patents
儲存元件，儲存裝置，製造儲存元件之方法，及磁頭 Download PDFInfo
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- TWI622158B TWI622158B TW103117218A TW103117218A TWI622158B TW I622158 B TWI622158 B TW I622158B TW 103117218 A TW103117218 A TW 103117218A TW 103117218 A TW103117218 A TW 103117218A TW I622158 B TWI622158 B TW I622158B
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- Prior art keywords
- layer
- storage
- barrier layer
- electrode layer
- spin barrier
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-126388 | 2013-06-17 | ||
| JP2013126388A JP6182993B2 (ja) | 2013-06-17 | 2013-06-17 | 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201507106A TW201507106A (zh) | 2015-02-16 |
| TWI622158B true TWI622158B (zh) | 2018-04-21 |
Family
ID=52018520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103117218A TWI622158B (zh) | 2013-06-17 | 2014-05-15 | 儲存元件，儲存裝置，製造儲存元件之方法，及磁頭 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9397288B2 (enExample) |
| JP (1) | JP6182993B2 (enExample) |
| CN (1) | CN104241286B (enExample) |
| TW (1) | TWI622158B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5040105B2 (ja) | 2005-12-01 | 2012-10-03 | ソニー株式会社 | 記憶素子、メモリ |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| JP6498968B2 (ja) * | 2015-03-11 | 2019-04-10 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| US10050192B2 (en) | 2015-12-11 | 2018-08-14 | Imec Vzw | Magnetic memory device having buffer layer |
| JP6540786B1 (ja) * | 2017-12-28 | 2019-07-10 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| US11276649B2 (en) * | 2019-06-28 | 2022-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Devices and methods having magnetic shielding layer |
| CN112289922B (zh) * | 2019-07-22 | 2023-05-30 | 中电海康集团有限公司 | 磁传感器及其制作方法 |
| CN112310273B (zh) * | 2019-07-29 | 2023-04-07 | 中电海康集团有限公司 | 磁性隧道结及其制备方法 |
| US11177225B2 (en) * | 2020-02-04 | 2021-11-16 | International Business Machines Corporation | Semiconductor device including physical unclonable function |
| JP2022190838A (ja) * | 2021-06-15 | 2022-12-27 | ソニーセミコンダクタソリューションズ株式会社 | 記憶装置、メモリセルアレイ、メモリセルアレイの製造方法、磁気ヘッド及び電子機器 |
| JP2023059471A (ja) | 2021-10-15 | 2023-04-27 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子及び記憶装置 |
| US11630169B1 (en) * | 2022-01-17 | 2023-04-18 | Allegro Microsystems, Llc | Fabricating a coil above and below a magnetoresistance element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7088609B2 (en) * | 2004-05-11 | 2006-08-08 | Grandis, Inc. | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
| US20120023386A1 (en) * | 2010-07-26 | 2012-01-26 | Samsung Electronics Co., Ltd. | Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern |
| US8493695B1 (en) * | 2011-06-28 | 2013-07-23 | Western Digital (Fremont), Llc | Method and system for providing a magnetic read transducer having an improved signal to noise ratio |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128015A (ja) * | 2002-09-30 | 2004-04-22 | Sony Corp | 磁気抵抗効果素子および磁気メモリ装置 |
| JP5039006B2 (ja) * | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
| US8363459B2 (en) * | 2009-06-11 | 2013-01-29 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
| US8513749B2 (en) * | 2010-01-14 | 2013-08-20 | Qualcomm Incorporated | Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction |
| JP2012059906A (ja) | 2010-09-09 | 2012-03-22 | Sony Corp | 記憶素子、メモリ装置 |
| US9006704B2 (en) * | 2011-02-11 | 2015-04-14 | Headway Technologies, Inc. | Magnetic element with improved out-of-plane anisotropy for spintronic applications |
-
2013
- 2013-06-17 JP JP2013126388A patent/JP6182993B2/ja not_active Expired - Fee Related
-
2014
- 2014-05-15 TW TW103117218A patent/TWI622158B/zh not_active IP Right Cessation
- 2014-06-09 US US14/299,228 patent/US9397288B2/en not_active Expired - Fee Related
- 2014-06-10 CN CN201410256897.4A patent/CN104241286B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7088609B2 (en) * | 2004-05-11 | 2006-08-08 | Grandis, Inc. | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
| US20120023386A1 (en) * | 2010-07-26 | 2012-01-26 | Samsung Electronics Co., Ltd. | Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern |
| US8493695B1 (en) * | 2011-06-28 | 2013-07-23 | Western Digital (Fremont), Llc | Method and system for providing a magnetic read transducer having an improved signal to noise ratio |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6182993B2 (ja) | 2017-08-23 |
| CN104241286B (zh) | 2018-09-21 |
| US20140367814A1 (en) | 2014-12-18 |
| US9397288B2 (en) | 2016-07-19 |
| JP2015002281A (ja) | 2015-01-05 |
| CN104241286A (zh) | 2014-12-24 |
| TW201507106A (zh) | 2015-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |