JP6182993B2 - 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド - Google Patents

記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド Download PDF

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Publication number
JP6182993B2
JP6182993B2 JP2013126388A JP2013126388A JP6182993B2 JP 6182993 B2 JP6182993 B2 JP 6182993B2 JP 2013126388 A JP2013126388 A JP 2013126388A JP 2013126388 A JP2013126388 A JP 2013126388A JP 6182993 B2 JP6182993 B2 JP 6182993B2
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Japan
Prior art keywords
layer
barrier layer
electrode layer
spin barrier
film thickness
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Expired - Fee Related
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JP2013126388A
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English (en)
Japanese (ja)
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JP2015002281A5 (enExample
JP2015002281A (ja
Inventor
大森　広之
広之 大森
細見　政功
政功 細見
別所　和宏
和宏 別所
肥後　豊
豊 肥後
一陽 山根
一陽 山根
裕行 内田
裕行 内田
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013126388A priority Critical patent/JP6182993B2/ja
Priority to TW103117218A priority patent/TWI622158B/zh
Priority to US14/299,228 priority patent/US9397288B2/en
Priority to CN201410256897.4A priority patent/CN104241286B/zh
Publication of JP2015002281A publication Critical patent/JP2015002281A/ja
Publication of JP2015002281A5 publication Critical patent/JP2015002281A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
JP2013126388A 2013-06-17 2013-06-17 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド Expired - Fee Related JP6182993B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013126388A JP6182993B2 (ja) 2013-06-17 2013-06-17 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド
TW103117218A TWI622158B (zh) 2013-06-17 2014-05-15 儲存元件，儲存裝置，製造儲存元件之方法，及磁頭
US14/299,228 US9397288B2 (en) 2013-06-17 2014-06-09 Storage element, storage device, method of manufacturing storage element, and magnetic head
CN201410256897.4A CN104241286B (zh) 2013-06-17 2014-06-10 存储元件、存储装置、制造存储元件的方法及磁头

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013126388A JP6182993B2 (ja) 2013-06-17 2013-06-17 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド

Publications (3)

Publication Number Publication Date
JP2015002281A JP2015002281A (ja) 2015-01-05
JP2015002281A5 JP2015002281A5 (enExample) 2016-02-25
JP6182993B2 true JP6182993B2 (ja) 2017-08-23

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JP2013126388A Expired - Fee Related JP6182993B2 (ja) 2013-06-17 2013-06-17 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド

Country Status (4)

Country Link
US (1) US9397288B2 (enExample)
JP (1) JP6182993B2 (enExample)
CN (1) CN104241286B (enExample)
TW (1) TWI622158B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5040105B2 (ja) 2005-12-01 2012-10-03 ソニー株式会社 記憶素子、メモリ
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP6498968B2 (ja) * 2015-03-11 2019-04-10 株式会社東芝 磁気抵抗素子および磁気メモリ
US10050192B2 (en) 2015-12-11 2018-08-14 Imec Vzw Magnetic memory device having buffer layer
JP6540786B1 (ja) * 2017-12-28 2019-07-10 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US11276649B2 (en) * 2019-06-28 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods having magnetic shielding layer
CN112289922B (zh) * 2019-07-22 2023-05-30 中电海康集团有限公司 磁传感器及其制作方法
CN112310273B (zh) * 2019-07-29 2023-04-07 中电海康集团有限公司 磁性隧道结及其制备方法
US11177225B2 (en) * 2020-02-04 2021-11-16 International Business Machines Corporation Semiconductor device including physical unclonable function
JP2022190838A (ja) * 2021-06-15 2022-12-27 ソニーセミコンダクタソリューションズ株式会社 記憶装置、メモリセルアレイ、メモリセルアレイの製造方法、磁気ヘッド及び電子機器
JP2023059471A (ja) 2021-10-15 2023-04-27 ソニーセミコンダクタソリューションズ株式会社 記憶素子及び記憶装置
US11630169B1 (en) * 2022-01-17 2023-04-18 Allegro Microsystems, Llc Fabricating a coil above and below a magnetoresistance element

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
US7088609B2 (en) * 2004-05-11 2006-08-08 Grandis, Inc. Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
JP5039006B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
US8363459B2 (en) * 2009-06-11 2013-01-29 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8513749B2 (en) * 2010-01-14 2013-08-20 Qualcomm Incorporated Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
JP2012059906A (ja) 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
US9006704B2 (en) * 2011-02-11 2015-04-14 Headway Technologies, Inc. Magnetic element with improved out-of-plane anisotropy for spintronic applications
US8493695B1 (en) * 2011-06-28 2013-07-23 Western Digital (Fremont), Llc Method and system for providing a magnetic read transducer having an improved signal to noise ratio

Also Published As

Publication number Publication date
CN104241286B (zh) 2018-09-21
US20140367814A1 (en) 2014-12-18
TWI622158B (zh) 2018-04-21
US9397288B2 (en) 2016-07-19
JP2015002281A (ja) 2015-01-05
CN104241286A (zh) 2014-12-24
TW201507106A (zh) 2015-02-16

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