JP2015002281A5 - - Google Patents
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- Publication number
- JP2015002281A5 JP2015002281A5 JP2013126388A JP2013126388A JP2015002281A5 JP 2015002281 A5 JP2015002281 A5 JP 2015002281A5 JP 2013126388 A JP2013126388 A JP 2013126388A JP 2013126388 A JP2013126388 A JP 2013126388A JP 2015002281 A5 JP2015002281 A5 JP 2015002281A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- memory
- etching
- magnetization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 description 17
- 230000005415 magnetization Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Chemical class 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013126388A JP6182993B2 (ja) | 2013-06-17 | 2013-06-17 | 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド |
| TW103117218A TWI622158B (zh) | 2013-06-17 | 2014-05-15 | 儲存元件，儲存裝置，製造儲存元件之方法，及磁頭 |
| US14/299,228 US9397288B2 (en) | 2013-06-17 | 2014-06-09 | Storage element, storage device, method of manufacturing storage element, and magnetic head |
| CN201410256897.4A CN104241286B (zh) | 2013-06-17 | 2014-06-10 | 存储元件、存储装置、制造存储元件的方法及磁头 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013126388A JP6182993B2 (ja) | 2013-06-17 | 2013-06-17 | 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015002281A JP2015002281A (ja) | 2015-01-05 |
| JP2015002281A5 true JP2015002281A5 (enExample) | 2016-02-25 |
| JP6182993B2 JP6182993B2 (ja) | 2017-08-23 |
Family
ID=52018520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013126388A Expired - Fee Related JP6182993B2 (ja) | 2013-06-17 | 2013-06-17 | 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9397288B2 (enExample) |
| JP (1) | JP6182993B2 (enExample) |
| CN (1) | CN104241286B (enExample) |
| TW (1) | TWI622158B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5040105B2 (ja) | 2005-12-01 | 2012-10-03 | ソニー株式会社 | 記憶素子、メモリ |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| JP6498968B2 (ja) * | 2015-03-11 | 2019-04-10 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| US10050192B2 (en) | 2015-12-11 | 2018-08-14 | Imec Vzw | Magnetic memory device having buffer layer |
| JP6540786B1 (ja) * | 2017-12-28 | 2019-07-10 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| US11276649B2 (en) * | 2019-06-28 | 2022-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Devices and methods having magnetic shielding layer |
| CN112289922B (zh) * | 2019-07-22 | 2023-05-30 | 中电海康集团有限公司 | 磁传感器及其制作方法 |
| CN112310273B (zh) * | 2019-07-29 | 2023-04-07 | 中电海康集团有限公司 | 磁性隧道结及其制备方法 |
| US11177225B2 (en) * | 2020-02-04 | 2021-11-16 | International Business Machines Corporation | Semiconductor device including physical unclonable function |
| JP2022190838A (ja) * | 2021-06-15 | 2022-12-27 | ソニーセミコンダクタソリューションズ株式会社 | 記憶装置、メモリセルアレイ、メモリセルアレイの製造方法、磁気ヘッド及び電子機器 |
| JP2023059471A (ja) | 2021-10-15 | 2023-04-27 | ソニーセミコンダクタソリューションズ株式会社 | 記憶素子及び記憶装置 |
| US11630169B1 (en) * | 2022-01-17 | 2023-04-18 | Allegro Microsystems, Llc | Fabricating a coil above and below a magnetoresistance element |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128015A (ja) * | 2002-09-30 | 2004-04-22 | Sony Corp | 磁気抵抗効果素子および磁気メモリ装置 |
| US7088609B2 (en) * | 2004-05-11 | 2006-08-08 | Grandis, Inc. | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
| JP5039006B2 (ja) * | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
| US8363459B2 (en) * | 2009-06-11 | 2013-01-29 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
| US8513749B2 (en) * | 2010-01-14 | 2013-08-20 | Qualcomm Incorporated | Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction |
| KR101684915B1 (ko) * | 2010-07-26 | 2016-12-12 | 삼성전자주식회사 | 자기 기억 소자 |
| JP2012059906A (ja) | 2010-09-09 | 2012-03-22 | Sony Corp | 記憶素子、メモリ装置 |
| US9006704B2 (en) * | 2011-02-11 | 2015-04-14 | Headway Technologies, Inc. | Magnetic element with improved out-of-plane anisotropy for spintronic applications |
| US8493695B1 (en) * | 2011-06-28 | 2013-07-23 | Western Digital (Fremont), Llc | Method and system for providing a magnetic read transducer having an improved signal to noise ratio |
-
2013
- 2013-06-17 JP JP2013126388A patent/JP6182993B2/ja not_active Expired - Fee Related
-
2014
- 2014-05-15 TW TW103117218A patent/TWI622158B/zh not_active IP Right Cessation
- 2014-06-09 US US14/299,228 patent/US9397288B2/en not_active Expired - Fee Related
- 2014-06-10 CN CN201410256897.4A patent/CN104241286B/zh not_active Expired - Fee Related
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