CN104241286B - 存储元件、存储装置、制造存储元件的方法及磁头 - Google Patents

存储元件、存储装置、制造存储元件的方法及磁头 Download PDF

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Publication number
CN104241286B
CN104241286B CN201410256897.4A CN201410256897A CN104241286B CN 104241286 B CN104241286 B CN 104241286B CN 201410256897 A CN201410256897 A CN 201410256897A CN 104241286 B CN104241286 B CN 104241286B
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China
Prior art keywords
layer
barrier layer
spin barrier
film thickness
electrode
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Expired - Fee Related
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CN201410256897.4A
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English (en)
Chinese (zh)
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CN104241286A (zh
Inventor
大森广之
细见政功
别所和宏
肥后丰
山根阳
山根一阳
内田裕行
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
CN201410256897.4A 2013-06-17 2014-06-10 存储元件、存储装置、制造存储元件的方法及磁头 Expired - Fee Related CN104241286B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-126388 2013-06-17
JP2013126388A JP6182993B2 (ja) 2013-06-17 2013-06-17 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド

Publications (2)

Publication Number Publication Date
CN104241286A CN104241286A (zh) 2014-12-24
CN104241286B true CN104241286B (zh) 2018-09-21

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CN201410256897.4A Expired - Fee Related CN104241286B (zh) 2013-06-17 2014-06-10 存储元件、存储装置、制造存储元件的方法及磁头

Country Status (4)

Country Link
US (1) US9397288B2 (enExample)
JP (1) JP6182993B2 (enExample)
CN (1) CN104241286B (enExample)
TW (1) TWI622158B (enExample)

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JP5040105B2 (ja) 2005-12-01 2012-10-03 ソニー株式会社 記憶素子、メモリ
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP6498968B2 (ja) * 2015-03-11 2019-04-10 株式会社東芝 磁気抵抗素子および磁気メモリ
US10050192B2 (en) 2015-12-11 2018-08-14 Imec Vzw Magnetic memory device having buffer layer
JP6540786B1 (ja) * 2017-12-28 2019-07-10 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US11276649B2 (en) * 2019-06-28 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Devices and methods having magnetic shielding layer
CN112289922B (zh) * 2019-07-22 2023-05-30 中电海康集团有限公司 磁传感器及其制作方法
CN112310273B (zh) * 2019-07-29 2023-04-07 中电海康集团有限公司 磁性隧道结及其制备方法
US11177225B2 (en) * 2020-02-04 2021-11-16 International Business Machines Corporation Semiconductor device including physical unclonable function
JP2022190838A (ja) * 2021-06-15 2022-12-27 ソニーセミコンダクタソリューションズ株式会社 記憶装置、メモリセルアレイ、メモリセルアレイの製造方法、磁気ヘッド及び電子機器
JP2023059471A (ja) 2021-10-15 2023-04-27 ソニーセミコンダクタソリューションズ株式会社 記憶素子及び記憶装置
US11630169B1 (en) * 2022-01-17 2023-04-18 Allegro Microsystems, Llc Fabricating a coil above and below a magnetoresistance element

Citations (1)

* Cited by examiner, † Cited by third party
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CN1961377A (zh) * 2004-05-11 2007-05-09 弘世科技公司 自旋势垒增强的磁致电阻效应元件以及使用这种元件的磁性存储器

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JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
JP5039006B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
US8363459B2 (en) * 2009-06-11 2013-01-29 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
US8513749B2 (en) * 2010-01-14 2013-08-20 Qualcomm Incorporated Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
KR101684915B1 (ko) * 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
JP2012059906A (ja) 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
US9006704B2 (en) * 2011-02-11 2015-04-14 Headway Technologies, Inc. Magnetic element with improved out-of-plane anisotropy for spintronic applications
US8493695B1 (en) * 2011-06-28 2013-07-23 Western Digital (Fremont), Llc Method and system for providing a magnetic read transducer having an improved signal to noise ratio

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1961377A (zh) * 2004-05-11 2007-05-09 弘世科技公司 自旋势垒增强的磁致电阻效应元件以及使用这种元件的磁性存储器

Also Published As

Publication number Publication date
JP6182993B2 (ja) 2017-08-23
US20140367814A1 (en) 2014-12-18
TWI622158B (zh) 2018-04-21
US9397288B2 (en) 2016-07-19
JP2015002281A (ja) 2015-01-05
CN104241286A (zh) 2014-12-24
TW201507106A (zh) 2015-02-16

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