TWI615905B - Magnetizing device and method of manufacturing semiconductor device - Google Patents

Magnetizing device and method of manufacturing semiconductor device Download PDF

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Publication number
TWI615905B
TWI615905B TW105135963A TW105135963A TWI615905B TW I615905 B TWI615905 B TW I615905B TW 105135963 A TW105135963 A TW 105135963A TW 105135963 A TW105135963 A TW 105135963A TW I615905 B TWI615905 B TW I615905B
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wafer
die
substrate
bonding
robot arm
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TW105135963A
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TW201732961A (en
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岡本直樹
Naoki Okamoto
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捷進科技有限公司
Fasford Technology Co., Ltd.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Supply And Installment Of Electrical Components (AREA)

Abstract

在基板被搬送於X方向，晶圓被搬送於Y 方向，晶圓環夾具被驅動於X、Y方向的預定的動作範圍之黏晶裝置中，需要搬送或驅動的空間，無法使裝置小型化。 The substrate is transported in the X direction, and the wafer is transported in the Y In the direction, the wafer ring jig is driven in the X and Y directions in a predetermined operation range of the die bonding device, which requires space for transportation or driving, and the device cannot be miniaturized.

黏晶裝置具備： 晶圓卡匣，其係儲存保持晶圓的晶圓環；盒，其係儲存基板；晶圓平台，其係固定晶圓環；接合平台，其係為了接合從晶圓拾取的晶粒而載置基板；及機械手臂，其係具備多自由度多關節機構，搬送晶圓環、基板及晶粒。 The crystal bonding device has: Wafer cassette, which stores the wafer ring holding the wafer; box, which stores the substrate; wafer platform, which fixes the wafer ring; bonding platform, which is used to bond the die picked from the wafer The substrate is placed; and the robotic arm is equipped with a multi-degree-of-freedom multi-joint mechanism to transport the wafer ring, substrate and die.

Description

黏晶裝置及半導體裝置的製造方法 Crystal bonding device and method for manufacturing semiconductor device

本發明是有關黏晶裝置，可適用在例如具備多自由度多關節機械手臂的黏晶裝置。 The invention relates to a crystal bonding device, which can be applied to, for example, a crystal bonding device provided with a multi-freedom multi-joint robot arm.

在基板安裝半導體晶片的黏晶機等的安裝裝置是具有傳送機構的導軌，該傳送機構是將上述基板予以間距搬送於X方向，在預定的安裝位置定位。在藉由此導軌來搬送定位的基板中藉由安裝工具來安裝上述半導體晶片。半導體晶片是被保持於晶圓環。亦即，在晶圓環保持有被貼著於樹脂製薄板的半導體晶圓，此半導體晶圓被分割成小四方塊而成為上述半導體晶片的上述晶圓環是被收納於卡匣，藉由夾頭來從此卡匣取出而搬送於Y方向供給載置於晶圓環夾具上。晶圓環夾具是在X、Y方向的預定的動作範圍被驅動，將被保持於晶圓環的半導體晶片之中拾取的半導體晶片定位於拾取位置。被定位於拾取位置的半導體晶片是藉由頂起銷來頂起。被頂起的半導體晶片會藉由上述安裝工具來吸附而被安裝於上述基板。(日本特開2008-53531號公報(專利文獻1))。 A mounting device such as a die bonding machine for mounting a semiconductor wafer on a substrate is a guide rail having a conveying mechanism that conveys the substrate in the X direction at intervals and positions it at a predetermined mounting position. The semiconductor chip is mounted on the substrate transported and positioned by the guide rail by a mounting tool. The semiconductor wafer is held in the wafer ring. That is, the wafer environmental protection holds the semiconductor wafer attached to the resin thin plate, the semiconductor wafer is divided into four small squares and the wafer ring that becomes the semiconductor wafer is stored in the cassette, by The chuck is taken out from the cassette and transported in the Y direction to be placed on the wafer ring jig. The wafer ring jig is driven in a predetermined operation range in the X and Y directions, and positions the semiconductor wafer picked up among the semiconductor wafers held in the wafer ring at the pickup position. The semiconductor chip positioned at the pickup position is lifted by the lift pin. The lifted semiconductor chip is adsorbed by the mounting tool and mounted on the substrate. (Japanese Patent Laid-Open No. 2008-53531 (Patent Document 1)).

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Literature]

[專利文獻1]日本特開2008-53531號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-53531

在被記載於專利文獻1般的安裝裝置中，基板被搬送於X方向，晶圓被搬送於Y方向，晶圓環夾具是被驅動於X、Y方向的預定的動作範圍，因此需要搬送或驅動的空間，無法使裝置小型化。 In the mounting device described in Patent Document 1, the substrate is transported in the X direction, the wafer is transported in the Y direction, and the wafer ring jig is driven in the X and Y directions within a predetermined operating range, so the transport or The driving space cannot make the device compact.

本發明的課題是在於提供一種可使裝置小型化的黏晶裝置。 An object of the present invention is to provide a die-bonding device that can miniaturize the device.

其他的課題及新穎的特徴是可由本說明書的記述及附圖明確得知。 Other issues and novel features can be clearly seen from the description and drawings in this specification.

若簡單說明本發明代表性者的概要，則如下記般。 A brief description of the representative of the present invention will be as follows.

亦即，黏晶裝置是具備多自由度多關節機構，具備搬送保持晶圓的晶圓環、基板及晶粒的機械手臂。 In other words, the die bonding device is provided with a multi-degree-of-freedom multi-joint mechanism, and a robot arm that transports and holds a wafer ring, a substrate, and a die.

若根據上述黏晶裝置，則可使裝置小型化。 According to the above crystal bonding device, the device can be miniaturized.

1‧‧‧黏晶裝置 1‧‧‧ Crystal bonding device

10‧‧‧晶圓平台 10‧‧‧ Wafer platform

11‧‧‧晶圓 11‧‧‧ Wafer

20‧‧‧接合平台 20‧‧‧joining platform

21‧‧‧基板 21‧‧‧ substrate

30‧‧‧晶圓卡匣 30‧‧‧wafer cassette

40、40L、40H‧‧‧盒 40, 40L, 40H‧‧‧‧box

50‧‧‧多機能機械手臂 50‧‧‧Multi-function mechanical arm

51‧‧‧固定部 51‧‧‧Fixed Department

52‧‧‧可動部 52‧‧‧Moving part

53‧‧‧工具連接部 53‧‧‧Tool connection

54‧‧‧力覺感測器 54‧‧‧ Force sensor

55‧‧‧視覺攝影機 55‧‧‧vision camera

60‧‧‧頂起用機械手臂 60‧‧‧ Robot arm for jacking

70‧‧‧晶圓操縱工具 70‧‧‧ Wafer manipulation tool

80‧‧‧基板操縱工具 80‧‧‧Substrate manipulation tool

90‧‧‧晶粒操縱工具 90‧‧‧ die manipulation tool

圖1是用以說明實施例的黏晶裝置的構成的立體圖。 FIG. 1 is a perspective view for explaining the structure of the crystal bonding apparatus of the embodiment.

圖2是用以說明實施例的黏晶裝置的構成的平面圖。 FIG. 2 is a plan view for explaining the structure of the crystal bonding apparatus of the embodiment.

圖3是用以說明實施例的晶圓平台的構成的剖面圖。 FIG. 3 is a cross-sectional view for explaining the structure of the wafer stage of the embodiment.

圖4是用以說明實施例的多機能機械手臂的立體圖。 FIG. 4 is a perspective view for explaining the multi-function robot arm of the embodiment.

圖5是用以說明實施例的晶圓操縱工具的立體圖。 FIG. 5 is a perspective view for explaining the wafer handling tool of the embodiment.

圖6是在實施例的多機能機械手臂安裝晶圓操縱工具的情況的立體圖。 FIG. 6 is a perspective view of a case where a wafer handling tool is mounted on the multi-function robot arm of the embodiment.

圖7是用以說明實施例的基板操縱工具的立體圖。 Fig. 7 is a perspective view for explaining the substrate manipulation tool of the embodiment.

圖8是在實施例的多機能機械手臂安裝基板操縱工具的情況的立體圖。 FIG. 8 is a perspective view of a case where a substrate manipulation tool is mounted on the multi-function robot arm of the embodiment.

圖9是用以說明實施例的晶粒操縱工具的立體圖。 FIG. 9 is a perspective view for explaining the die manipulation tool of the embodiment.

圖10是在實施例的多機能機械手臂安裝晶粒操縱工具的情況的立體圖。 FIG. 10 is a perspective view of a case where a die manipulation tool is mounted on the multi-function robot arm of the embodiment.

圖11是用以說明實施例的頂起用機械手臂的立體圖。 Fig. 11 is a perspective view for explaining the jacking robot of the embodiment.

圖12A是用以說明實施例的黏晶裝置的動作的流程圖。 12A is a flowchart for explaining the operation of the die bonding apparatus of the embodiment.

圖12B是用以說明實施例的黏晶裝置的動作的流程圖。 12B is a flowchart for explaining the operation of the die bonding apparatus of the embodiment.

圖13是用以說明實施例的黏晶裝置的晶圓搬送時的動作的立體圖。 FIG. 13 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment during wafer transfer.

圖14是用以說明實施例的黏晶裝置的基板搬送時的動作的立體圖。 14 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment when the substrate is transferred.

圖15是用以說明實施例的黏晶裝置的拾取及黏接時的動作的立體圖。 15 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment during pickup and bonding.

圖16是用以說明實施例的黏晶裝置的拾取的動作的立體圖。 16 is a perspective view for explaining the pickup operation of the die bonding apparatus of the embodiment.

圖17是用以說明實施例的覆晶用晶粒操縱工具的立體圖。 FIG. 17 is a perspective view for explaining the die handling tool for flip chip of the embodiment.

圖18是用以說明實施例的覆晶用晶粒操縱工具的立體圖。 Fig. 18 is a perspective view for explaining a die handling tool for flip chip of the embodiment.

圖19是用以說明實施例的覆晶用晶粒操縱工具的立體圖。 FIG. 19 is a perspective view for explaining the die handling tool for flip chip of the embodiment.

圖20是用以說明實施例的覆晶用晶粒操縱工具的立體圖。 Fig. 20 is a perspective view for explaining the die handling tool for flip chip of the embodiment.

在半導體裝置的製造工程的一部分有將半導體晶片(以下簡稱為晶粒)搭載於配線基板或導線架等(以下簡稱為基板)而組合封裝的工程，組合封裝的工程的一部分有從半導體晶圓(以下簡稱為晶圓)分割晶粒的工程、及將分割後的晶粒搭載於基板上的接合工程。在接合工程所被使用的製造裝置為黏晶機或覆晶接合器等的黏晶裝置。 A part of the manufacturing process of the semiconductor device includes a semiconductor wafer (hereinafter referred to as a die) mounted on a wiring board, a lead frame, etc. (hereinafter referred to as a substrate) and a combined packaging process, and a part of the combined packaging process includes a semiconductor wafer (Hereinafter referred to as a wafer) a process of dividing the crystal grains and a bonding process of mounting the divided crystal grains on the substrate. The manufacturing device used in the bonding process is a die bonding device such as a die bonding machine or a flip chip bonding device.

黏晶裝置是以焊錫、鍍金、樹脂作為接合材 料，將晶粒接合(搭載黏著)於基板或已被接合的晶粒上之裝置。在將晶粒接合至例如基板的表面之接合裝置中，利用被稱為吸盤(collet)的吸附噴嘴來從晶圓吸附拾取晶粒，搬送至基板上，賦予推壓力，且將接合材加熱，藉此進行接合的動作(作業)會被重複進行。吸盤是具有吸附孔，吸引空氣，吸附保持晶粒的保持具，具有與晶粒同程度的大小。 The die bonding device uses solder, gold plating, and resin as bonding materials It is a device that joins (mounts and adheres) the die to the substrate or the joined die. In a bonding apparatus for bonding a die to, for example, the surface of a substrate, a suction nozzle called a collet is used to attract and pick up the die from the wafer, transport it onto the substrate, apply a pressing force, and heat the bonding material. The operation (work) of joining by this is repeated. The suction cup is a holder with suction holes, which attracts air, and holds the crystal grains, and has the same size as the crystal grains.

實施形態的黏晶裝置是在正面側配置儲存晶圓環的晶圓卡匣及儲存基板的盒(magazine)，在背面側固定配置晶圓平台，在晶圓卡匣與晶圓平台之間配置接合平台。晶圓、基板、及晶粒是藉由一個的機械手臂來搬送，其水平方向的搬送方向是同方向。藉此，可使裝置小型化。 The die-bonding device of the embodiment is that a wafer cassette storing a wafer ring and a magazine storing a substrate are arranged on the front side, a wafer platform is fixedly arranged on the back side, and the wafer cassette and the wafer platform are arranged Engage the platform. Wafers, substrates, and die are transported by a robotic arm, and the horizontal transport direction is the same direction. With this, the device can be miniaturized.

以下，利用圖面來說明有關實施例。但，在以下的說明中，對於同一構成要素附上同一符號而省略重複的說明。另外，圖面為了使說明更明確，而相較於實際的形態，有時針對各部的寬度、厚度、形狀等是模式性地表示，但無論如何為其一例，並非限定本發明的解釋者。 Hereinafter, the embodiments will be described using the drawings. However, in the following description, the same components are given the same symbols and redundant descriptions are omitted. In addition, in order to make the description clearer, the drawings may be representative of the width, thickness, shape, etc. of each part compared to the actual form. However, in any case, it is only an example and does not limit the interpreter of the present invention.

〔實施例〕 [Examples]

利用圖1來說明有關實施例的黏晶裝置。圖1是表示實施例的黏晶裝置的構成的立體圖。在圖1中顯示後述的多機能機械手臂的複數的狀態。 The crystal bonding apparatus according to the embodiment will be explained using FIG. 1. FIG. 1 is a perspective view showing the configuration of a crystal bonding apparatus of an embodiment. FIG. 1 shows the plural states of the multi-function robot arm described later.

實施例的黏晶裝置1是具備：正面的寬度為 W，深度為D，高度為H的裝置本體2。裝置本體2是具備：底部基礎3、頂部基礎4、及被配置於該等之間的中間基礎5。在底部基礎3上是固定有頂起用機械手臂60，在頂部基礎4下是固定有多機能機械手臂50。在中間基礎5上是於背面側固定有晶圓平台10，於鄰接的正面側固定有接合平台20。在晶圓平台10下的中間基礎5是開鑿有孔。在比接合平台20更正面側，比中間基礎5更上方配置有儲存晶圓環14(保持晶圓11)的晶圓卡匣30，且於其上方配置有儲存基板21的盒40。例如，晶圓11的直徑最大為300mm(12英吋)，基板21的大小最大為310×310mm時，裝置本體2的大小是W=450mm，H=1600mm，D=1500mm為理想。 The crystal bonding apparatus 1 of the embodiment is provided with: the width of the front surface is W, device body 2 with depth D and height H. The device body 2 includes a bottom foundation 3, a top foundation 4, and an intermediate foundation 5 disposed between these. A mechanical arm 60 for jacking is fixed on the bottom foundation 3, and a multi-function mechanical arm 50 is fixed under the top foundation 4. On the intermediate base 5, a wafer platform 10 is fixed on the back side, and a bonding platform 20 is fixed on the adjacent front side. The intermediate foundation 5 under the wafer platform 10 is drilled with holes. A wafer cassette 30 storing a wafer ring 14 (holding wafer 11) is arranged on the front side of the bonding platform 20 and above the intermediate base 5, and a cassette 40 storing the substrate 21 is arranged above the wafer cassette 30. For example, when the wafer 11 has a maximum diameter of 300 mm (12 inches) and the substrate 21 has a maximum size of 310×310 mm, the size of the device body 2 is ideally W=450 mm, H=1600 mm, and D=1500 mm.

其次，利用圖3來說明晶圓平台的詳細的構成。圖3是表示實施例的晶圓平台的構成的剖面圖。在晶圓11的背面是貼附有晶粒貼附薄膜(DAF)18，更在其背側貼附有切割膠帶16。而且，切割膠帶16的緣邊是被貼附於晶圓環14，被擴展器15夾入而固定。擴展器15是以汽缸等所構成，倒L字狀部分是可旋轉，倒L字狀部分是可上下作動。亦即，晶圓平台10是具備：壓下晶圓環14的擴展器15、及被保持於晶圓環14，將黏接有複數的晶粒D(晶圓11)的切割膠帶16水平定位的支撐環17。如此，隨著晶粒D的薄型化，黏晶用的黏著劑是由液狀換成薄膜狀，設為在晶圓11與切割膠帶16之間貼附被稱為晶粒貼附薄膜18的薄膜狀的黏著材料之構造。就具 有晶粒貼附薄膜18的晶圓11而言，切割是對於晶圓11及晶粒貼附薄膜18進行。另外，亦可為切割膠帶16與晶粒貼附薄膜18被一體化的膠帶。 Next, the detailed structure of the wafer platform will be described using FIG. 3. FIG. 3 is a cross-sectional view showing the structure of a wafer stage of an embodiment. A die attach film (DAF) 18 is attached to the back of the wafer 11, and a dicing tape 16 is attached to the back side. In addition, the edge of the dicing tape 16 is attached to the wafer ring 14, sandwiched and fixed by the expander 15. The expander 15 is composed of a cylinder or the like, the inverted L-shaped portion is rotatable, and the inverted L-shaped portion is movable up and down. That is, the wafer platform 10 includes: an expander 15 that presses the wafer ring 14 and is held by the wafer ring 14 to horizontally position the dicing tape 16 to which a plurality of dies D (wafer 11) are adhered.的支持环17。 The support ring 17. In this way, as the die D becomes thinner, the adhesive for crystal bonding is changed from a liquid state to a film state, and the so-called die attach film 18 is attached between the wafer 11 and the dicing tape 16 The structure of film-like adhesive materials. Just For the wafer 11 having the die attach film 18, the dicing is performed on the wafer 11 and the die attach film 18. In addition, it may be a tape in which the dicing tape 16 and the die attach film 18 are integrated.

其次，利用圖4來說明有關多機能機械手臂50的構成。圖4是表示實施例的多機能機械手臂的構成的立體圖。實施例的多機能機械手臂50是垂直型多自由度多關節機械手臂。多機能機械手臂50是具備固定部51、可動部52、工具更換部53、力覺感測器54及視覺攝影機(vision camera)55。工具連接部53是凸型(公型)，連接後述的各種工具的凹型(母型)的連接部。各種工具是晶圓操縱工具70、基板操縱工具80、晶粒操縱工具90等。各種工具的儲存部是在多機能機械手臂50的動作範圍被配置於不妨礙晶圓搬送、基板搬送及拾取&放置的位置。 Next, the configuration of the multi-function robot arm 50 will be described using FIG. 4. 4 is a perspective view showing the configuration of a multi-functional robot arm of the embodiment. The multi-function robot arm 50 of the embodiment is a vertical multi-degree-of-freedom multi-joint robot arm. The multifunctional robot arm 50 includes a fixed portion 51, a movable portion 52, a tool replacement portion 53, a force sensor 54, and a vision camera 55. The tool connecting portion 53 is a convex type (male type), and is a concave type (female type) connecting part for connecting various tools described later. The various tools are a wafer manipulation tool 70, a substrate manipulation tool 80, a die manipulation tool 90, and the like. The storage parts of various tools are arranged at positions that do not interfere with wafer transfer, substrate transfer, and pick-up and placement within the operating range of the multi-function robot arm 50.

其次、利用圖5、6來說明有關晶圓操縱工具70。圖5是表示實施例的晶圓操縱工具的構成的立體圖。圖6是表示在實施例的多機能機械手臂安裝晶圓操縱工具的狀態的立體圖。 Next, the wafer handling tool 70 will be described using FIGS. 5 and 6. 5 is a perspective view showing the configuration of a wafer handling tool of an embodiment. 6 is a perspective view showing a state where a wafer handling tool is attached to the multi-functional robot arm of the embodiment.

如圖5所示般，晶圓操縱工具70是具備晶圓夾頭部71及連接部72。晶圓把持部71是把持晶圓環14。連接部72是凹型(母型)，與多機能機械手臂50的工具連接部53卡合。如圖6所示般，被安裝於多機能機械手臂50的前端之晶圓操縱工具70是把持晶圓環14，出入於晶圓卡匣30。 As shown in FIG. 5, the wafer handling tool 70 includes a wafer chuck head 71 and a connection portion 72. The wafer holding portion 71 holds the wafer ring 14. The connection portion 72 is concave (female), and is engaged with the tool connection portion 53 of the multi-functional robot arm 50. As shown in FIG. 6, the wafer handling tool 70 mounted on the front end of the multi-function robot arm 50 holds the wafer ring 14 and enters and exits the wafer cassette 30.

其次，利用圖7、8來說明有關基板操縱工具80。圖7是表示實施例的基板操縱工具的構成的立體圖。圖8是在實施例的多機能機械手臂安裝基板操縱工具的狀態的立體圖。 Next, the substrate handling tool 80 will be described using FIGS. 7 and 8. 7 is a perspective view showing the structure of a substrate handling tool of an embodiment. 8 is a perspective view of a state in which a substrate manipulation tool is mounted on the multi-function robot arm of the embodiment.

如圖7所示般，基板操縱工具80是具備搭載部81、支撐部82及連接部83。搭載部71是與基板31同程度的大小，為平板狀，載置基板31的部分。支撐部82是圓柱狀，被連接至搭載部81及連接部83。連接部83是凹型(母型)，與多機能機械手臂50的工具連接部53卡合。如圖8所示般，被安裝於多機能機械手臂50的前端之基板操縱工具80是載入基板21，放置於接合平台20或除去。 As shown in FIG. 7, the substrate operating tool 80 includes a mounting portion 81, a supporting portion 82 and a connecting portion 83. The mounting portion 71 is the same size as the substrate 31, is a flat plate, and mounts the substrate 31. The support portion 82 is cylindrical, and is connected to the mounting portion 81 and the connection portion 83. The connection portion 83 is concave (female), and is engaged with the tool connection portion 53 of the multi-functional robot arm 50. As shown in FIG. 8, the substrate manipulation tool 80 mounted on the front end of the multi-function robot arm 50 is loaded onto the substrate 21 and placed on the bonding platform 20 or removed.

其次，利用圖9、10來說明有關晶粒操縱工具90。圖9是表示實施例的晶粒操縱工具的構成的立體圖。圖10是在實施例的多機能機械手臂安裝晶粒操縱工具的狀態的立體圖。 Next, the related die manipulation tool 90 will be explained using FIGS. 9 and 10. 9 is a perspective view showing the configuration of a die manipulation tool of the embodiment. 10 is a perspective view of a state in which a die manipulation tool is mounted on the multi-function robot arm of the embodiment.

如圖9所示般，晶粒操縱工具90是具備頭部91及連接部92。在頭部91的前端是安裝有吸盤93，吸附晶粒D。連接部92是凹型(母型)，與多機能機械手臂50的工具連接部53卡合。如圖10所示般，晶粒操縱工具90是被安裝於多機能機械手臂50的前端。 As shown in FIG. 9, the die manipulation tool 90 includes a head 91 and a connecting portion 92. At the front end of the head 91, a suction cup 93 is attached to attract the crystal grains D. The connection portion 92 is concave (female), and is engaged with the tool connection portion 53 of the multi-functional robot arm 50. As shown in FIG. 10, the die manipulation tool 90 is mounted on the front end of the multi-function robot arm 50.

其次，利用圖11來說明有關頂起用機械手臂60的構成。圖11是表示實施例的頂起用機械手臂的構成的立體圖。實施例的頂起用機械手臂60是垂直型多自由 度多關節機械手臂。頂起用機械手臂60是具備固定部61、可動部62及頂起工具部63。頂起工具部63是可按照品種別或製品別來更換。 Next, the configuration of the jacking robot 60 will be described using FIG. 11. Fig. 11 is a perspective view showing the configuration of the jacking robot of the embodiment. The mechanical arm 60 of the embodiment is a vertical type multi-free Degree multi-joint mechanical arm. The manipulator for jacking 60 includes a fixed portion 61, a movable portion 62 and a jacking tool portion 63. The jacking tool part 63 can be replaced according to type or product type.

其次、利用圖12A、12B、13~16來說明有關黏晶裝置1的動作。圖12A、12B是用以說明實施例的黏晶裝置的動作的流程圖。圖13是用以說明實施例的黏晶裝置的晶圓搬送時的動作的立體圖。圖14是用以說明實施例的黏晶裝置的基板搬送時的動作的立體圖。圖15是用以說明實施例的黏晶裝置的拾取及黏接時的動作的立體圖。圖16是用以說明實施例的黏晶裝置的拾取的動作的立體圖。 Next, the operation of the die bonding apparatus 1 will be described using FIGS. 12A, 12B, and 13-16. 12A and 12B are flowcharts for explaining the operation of the die bonding apparatus of the embodiment. FIG. 13 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment during wafer transfer. 14 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment when the substrate is transferred. 15 is a perspective view for explaining the operation of the die bonding apparatus of the embodiment during pickup and bonding. 16 is a perspective view for explaining the pickup operation of the die bonding apparatus of the embodiment.

黏晶裝置1是具備未圖示的控制裝置，控制裝置是具有未圖示的CPU(Central Processor Unit)、儲存控制程式的記憶體或儲存資料的記憶體、控制匯流排等，控制多機能機械手臂50或頂起用機械手臂60等之構成黏晶裝置1的各要素。 The die-bonding device 1 is provided with a control device (not shown). The control device is a CPU (Central Processor Unit) (not shown), a memory for storing a control program or a memory for storing data, a control bus, etc., to control a multi-function machine Each element constituting the crystal bonding apparatus 1 such as the arm 50 or the mechanical arm 60 for jacking.

黏晶裝置1的動作是被分成：初始化(步驟S1)、晶圓搬送(步驟S2)、基板搬送(步驟S3)、拾取&放置(步驟S3)。 The operations of the die bonding apparatus 1 are divided into: initialization (step S1), wafer transfer (step S2), substrate transfer (step S3), and picking & placing (step S3).

步驟S1：控制裝置是使構成多機能機械手臂50或頂起用機械手臂60等的黏晶裝置1之各要素初期化(初始化)。 Step S1: The control device initializes (initializes) each element constituting the die bonding apparatus 1 such as the multi-functional robot arm 50 or the jacking robot arm 60.

步驟S2的晶圓搬送是進行下記的動作。 The wafer transfer in step S2 is the operation described below.

步驟S21：控制裝置是在多機能機械手臂50安裝晶 圓操縱工具70(晶圓用工具更換)。 Step S21: The control device is to install the crystal on the multi-function mechanical arm 50 Circular manipulation tool 70 (wafer replacement tool).

步驟S22：控制裝置是利用多機能機械手臂50的視覺攝影機55來確認晶圓卡匣30的有無(晶圓卡匣有無確認)。 Step S22: The control device uses the visual camera 55 of the multi-function robotic arm 50 to confirm the presence or absence of the wafer cassette 30 (the presence or absence of the wafer cassette).

步驟S23：控制裝置是利用多機能機械手臂50的視覺攝影機55來確認晶圓11(晶圓環14)的有無(晶圓有無確認)。 Step S23: The control device uses the visual camera 55 of the multi-functional robot arm 50 to confirm the presence or absence of the wafer 11 (wafer ring 14) (wafer presence confirmation).

步驟S24：控制裝置是利用多機能機械手臂50的晶圓操縱工具70，如圖13所示般，從晶圓卡匣30取出保持晶圓11的晶圓環14，搬送置晶圓平台10(晶圓搬送)。 Step S24: The control device is a wafer manipulation tool 70 using a multi-function robotic arm 50. As shown in FIG. 13, the wafer ring 14 holding the wafer 11 is taken out from the wafer cassette 30, and the wafer platform 10 is transferred ( Wafer transfer).

步驟S25：控制裝置是以擴展器15來按壓晶圓環14，拉長被保持於晶圓環14的切割膠帶16(晶圓擴展)。藉此，晶粒D彼此間的間隔會擴大，防止各晶粒D彼此間的干涉‧接觸，各個的晶粒分離，容易頂起。 Step S25: The control device presses the wafer ring 14 with the spreader 15 and stretches the dicing tape 16 held by the wafer ring 14 (wafer spreading). Thereby, the interval between the crystal grains D will be enlarged, preventing the interference and contact between the crystal grains D, the individual crystal grains are separated, and it is easy to lift up.

步驟S3的基板搬送是進行下記的動作。 The substrate transfer in step S3 is the operation described below.

步驟S31：控制裝置是從多機能機械手臂50卸下晶圓操縱工具70，安裝基板操縱工具80(基板用工具更換)。 Step S31: The control device unloads the wafer manipulation tool 70 from the multi-function robotic arm 50 and mounts the substrate manipulation tool 80 (substrate tool replacement).

步驟S32：控制裝置是利用多機能機械手臂50的視覺攝影機55來確認盒40的有無(盒有無確認)。 Step S32: The control device uses the visual camera 55 of the multi-function robotic arm 50 to confirm the presence or absence of the cartridge 40 (confirm the presence or absence of the cartridge).

步驟S33：控制裝置是利用多機能機械手臂50的視覺攝影機55來確認基板21的有無(基板有無確認)。 Step S33: The control device uses the vision camera 55 of the multi-function robotic arm 50 to confirm the presence or absence of the substrate 21 (substrate presence confirmation).

步驟S34：控制裝置是利用多機能機械手臂50的基 板操縱工具80，如圖14所示般，從盒40L取出基板21，搬送至接合平台20(基板搬送)。 Step S34: The control device is based on the use of a multi-function mechanical arm 50 As shown in FIG. 14, the board handling tool 80 takes out the substrate 21 from the cassette 40L and transfers it to the bonding table 20 (substrate transfer).

步驟S4的拾取&放置是進行下記的動作。 The picking & placing in step S4 is the action described below.

步驟S41：控制裝置是從多機能機械手臂50卸下基板操縱工具80，安裝晶粒操縱工具90(晶粒用工具更換)。 Step S41: The control device removes the substrate manipulation tool 80 from the multi-function robotic arm 50 and installs the die manipulation tool 90 (the die is replaced with a tool).

步驟S42：控制裝置是修正晶粒操縱工具90的位置(晶粒用工具位置修正)。 Step S42: The control device corrects the position of the die manipulation tool 90 (die position correction for die).

步驟S43：控制裝置是利用多機能機械手臂50的視覺攝影機55來辨識晶圓11的對準(晶圓對準辨識)。 Step S43: The control device uses the vision camera 55 of the multi-function robot arm 50 to recognize the alignment of the wafer 11 (wafer alignment recognition).

步驟S44：控制裝置是利用多機能機械手臂50的視覺攝影機55來辨識基板21的對準(晶圓對準辨識)。 Step S44: The control device uses the vision camera 55 of the multi-function robotic arm 50 to recognize the alignment of the substrate 21 (wafer alignment recognition).

步驟S45：控制裝置是如圖15、16所示般，將頂起用機械手臂60的頂起工具部63由晶粒D下方頂起，將安裝於多機能機械手臂50的晶粒操縱工具90之吸盤93由晶粒D上方下降，拾取晶粒D。此時，亦可在拾取及頂起動作設置傾斜度。多機能機械手臂50及頂起用機械手臂60是可為XYZ軸/αβθ軸的6自由度的動作，吸盤93是可如用手舉起晶粒D般的柔軟動作。使頂起工具部63具有可吸收保持切割膠帶16的機能，不僅頂起，亦可進行如用手拉下般的動作。藉由使吸盤93及頂起工具部63的雙方動作，可進行更複雜且確實的拾取。 Step S45: As shown in FIGS. 15 and 16, the control device lifts the jacking tool part 63 of the jacking robot 60 from below the die D, and the die manipulation tool 90 mounted on the multifunctional robot arm 50 The chuck 93 descends from above the die D to pick up the die D. At this time, the inclination can also be set in the pick-up and jack-up operations. The multi-functional robot arm 50 and the jack-up robot arm 60 are 6-degree-of-freedom motions capable of the XYZ axis/αβθ axis, and the suction cup 93 is a soft motion that can lift the crystal grains D by hand. The jacking tool portion 63 has a function of absorbing and holding the cutting tape 16, and not only jacking up, but also performing operations like pulling down by hand. By operating both the suction cup 93 and the jacking tool part 63, more complicated and reliable pickup can be performed.

步驟S46：控制裝置是根據在步驟S43辨識的晶圓對準、在步驟S44辨識的基板對準及力覺感測器54來修正 拾取的晶粒D的位置。 Step S46: The control device corrects based on the wafer alignment identified in step S43, the substrate alignment identified in step S44, and the force sensor 54 The location of the picked grain D.

步驟S47：控制裝置是利用位於拾取的晶粒D的下方之視覺攝影機(未圖示)來檢查晶粒D的外觀(晶粒外觀檢查)。 Step S47: The control device uses a visual camera (not shown) located below the picked die D to check the appearance of the die D (die appearance inspection).

步驟S48：控制裝置是將拾取的晶粒D接合至基板21上或已被接合的晶粒上。 Step S48: The control device bonds the picked die D to the substrate 21 or the die that has been joined.

步驟S49：控制裝置是判斷是否無接合至接合平台20上的基板。YES的情況是移動至步驟S4B，NO的情況是移動至步驟S4A。 Step S49: The control device determines whether there is no substrate bonded to the bonding platform 20. In the case of YES, it moves to step S4B, and in the case of NO, it moves to step S4A.

步驟S4A：控制裝置是判斷是否無拾取於晶圓11的晶粒。YES的情況是移動至步驟S4C，NO的情況是回到步驟S45。 Step S4A: The control device determines whether there is no die picked up on the wafer 11. In the case of YES, it moves to step S4C, and in the case of NO, it returns to step S45.

步驟S4B：控制裝置是更換基板。首先，控制裝置是從多機能機械手臂50卸下晶粒操縱工具90，安裝基板操縱工具80。其次，控制裝置是利用多機能機械手臂50的基板操縱工具80來從接合平台20取出基板21，搬送至與接合前取出的盒40L不同的盒40H。其次，控制裝置是利用多機能機械手臂50的基板操縱工具80來從盒40L取出其次的基板，搬送至接合平台20。然後，回到步驟S41。 Step S4B: The control device is to replace the substrate. First, the control device removes the die manipulation tool 90 from the multi-functional robot arm 50 and mounts the substrate manipulation tool 80. Next, the control device uses the substrate operating tool 80 of the multi-functional robot arm 50 to take out the substrate 21 from the bonding stage 20 and transport it to a cartridge 40H different from the cartridge 40L taken out before bonding. Next, the control device uses the substrate operating tool 80 of the multi-functional robot arm 50 to take out the next substrate from the cassette 40L and transport it to the bonding platform 20. Then, it returns to step S41.

步驟S4C：控制裝置是更換晶圓。首先，控制裝置是從多機能機械手臂50卸下晶粒操縱工具90，安裝晶圓操縱工具70。其次，控制裝置是利用多機能機械手臂50的晶圓操縱工具70來從晶圓平台10取出晶圓環 14，搬送至晶圓卡匣30。其次，控制裝置是利用多機能機械手臂50的晶圓操縱工具70來將其次的晶圓環從晶圓卡匣30取出，搬送至晶圓平台10。控制裝置是以擴展器15來按壓晶圓環14，將被保持於晶圓環14的切割膠帶16拉長。然後，回到步驟S41。 Step S4C: The control device is to replace the wafer. First, the control device removes the die manipulation tool 90 from the multi-functional robot arm 50 and installs the wafer manipulation tool 70. Secondly, the control device utilizes the wafer manipulation tool 70 of the multi-function robot arm 50 to take out the wafer ring from the wafer platform 10 14. Transfer to the wafer cassette 30. Secondly, the control device uses the wafer manipulation tool 70 of the multi-functional robot arm 50 to take out the next wafer ring from the wafer cassette 30 and transfer it to the wafer platform 10. The control device presses the wafer ring 14 with the spreader 15 and stretches the dicing tape 16 held by the wafer ring 14. Then, it returns to step S41.

其次，利用圖17~20來說明有關使用黏晶裝置1作為覆晶接合器時的晶粒操縱工具。圖17是表示實施例的覆晶用晶粒操縱工具的第1狀態的立體圖。圖18是表示實施例的覆晶用晶粒操縱工具的第2狀態的立體圖。圖19是表示實施例的覆晶用晶粒操縱工具的第3狀態的立體圖。圖20是表示實施例的覆晶用晶粒操縱工具的第4狀態的立體圖。 Next, the die handling tool when using the die bonding apparatus 1 as a flip-chip bonder will be explained using FIGS. 17-20. FIG. 17 is a perspective view showing a first state of the crystal flip chip operating tool of the embodiment. Fig. 18 is a perspective view showing a second state of the die handling tool for flip-chip according to the embodiment. FIG. 19 is a perspective view showing a third state of the die-grinding tool for flip chip. FIG. 20 is a perspective view showing a fourth state of the die-grinding tool for flip chip.

如圖17所示般，覆晶接合器用晶粒操縱工具100是具備拾取頭部101、反轉頭部102、基礎部103及連接部104。在拾取頭部101及反轉頭部102是分別具備吸附晶粒D的吸盤105、106。拾取頭部101及反轉頭部102是形成可動。 As shown in FIG. 17, the die handling tool 100 for a flip-chip bonder includes a pickup head 101, a reverse head 102, a base 103, and a connection 104. The pickup head 101 and the reverse head 102 are provided with chucks 105 and 106 for sucking the crystal grains D, respectively. The pickup head 101 and the inverted head 102 are movable.

圖17是拾取頭部101及反轉頭部102為開啟的狀態(第1狀態)。在第1狀態中，拾取頭部101是以吸盤105來拾取晶粒D。 FIG. 17 shows a state where the pickup head 101 and the inverted head 102 are turned on (first state). In the first state, the pickup head 101 picks up the die D with the chuck 105.

圖18是拾取頭部101為開啟的狀態，反轉頭部102為關閉的狀態(第2狀態)。亦可拾取頭部101為關閉的狀態，反轉頭部102為開啟的狀態。第2狀態為第1狀態的下一個狀態。 FIG. 18 shows a state where the pickup head 101 is turned on, and the inverted head 102 is turned off (second state). It is also possible to pick up the head 101 in the closed state and reverse the head 102 in the open state. The second state is the next state of the first state.

圖19是拾取頭部101及反轉頭部102為關閉的狀態(第3狀態)。在第3狀態中，以反轉頭部102的吸盤106來吸附晶粒D，解除拾取頭部101的吸盤105之晶粒D的吸附。第3狀態是第2狀態的下一個狀態。 FIG. 19 shows a state where the pickup head 101 and the inverted head 102 are closed (third state). In the third state, the crystal grains D are adsorbed by the suction cup 106 of the inverted head 102, and the adsorption of the crystal grains D of the suction cup 105 of the pickup head 101 is released. The third state is the next state of the second state.

圖20是拾取頭部101及反轉頭部102為開啟的狀態(第4狀態)。在第4狀態中，晶粒D會從拾取頭部101反轉交接至反轉頭部102，反轉頭部102是將以吸盤106所吸附的晶粒D放置(接合)於基板等。第4狀態是第3狀態的下一個狀態。 FIG. 20 shows a state where the pickup head 101 and the inverted head 102 are turned on (fourth state). In the fourth state, the die D is reversely transferred from the pickup head 101 to the reverse head 102, and the reverse head 102 places (bonds) the die D adsorbed by the chuck 106 on the substrate or the like. The fourth state is the next state of the third state.

實施例的黏晶裝置是可取得以下的效果。 The crystal bonding apparatus of the embodiment can achieve the following effects.

由於在機械手臂使用多自由度多關節機構，所以能為使可動領域廣的姿勢變化之動作，因此可使兼用晶圓的釋出、盒的收納等的多種的動作。藉此，可減少機構部。並且，可形成將晶圓卡匣/盒、接合平台、晶圓平台排列於一方向配置之簡單的佈局構成，裝置的輕量小型化成為可能。 Since a multi-degree-of-freedom and multi-joint mechanism is used for the robot arm, it is possible to change the posture in a wide range of motion. Therefore, it is possible to use a variety of operations including wafer release and cassette storage. With this, the number of mechanism parts can be reduced. In addition, a simple layout structure in which the wafer cassettes/cassettes, the bonding platform, and the wafer platform are arranged in one direction can be formed, and it is possible to reduce the weight and size of the device.

並且，只由裝置的正面來進行晶圓(晶圓卡匣)及基板(盒)的出入，裝置的寬度變窄，因此藉由將裝置複數並列配置，將複數的裝置並列動作，可抑制裝置所佔的面積的增加，使處理能力提升。 In addition, wafers (wafer cassettes) and substrates (cassettes) are accessed only from the front of the device, and the width of the device is narrow. Therefore, by arranging a plurality of devices in parallel and operating a plurality of devices in parallel, the device can be suppressed The increase in the area occupied increases the processing capacity.

又，由於使用多自由度多關節機構，所以可配合拾取點及放置點各者的面來搬送，因此調整變容易。 In addition, since the multi-degree-of-freedom multi-joint mechanism is used, it can be transported in accordance with the surface of each of the pick-up point and the placement point, so adjustment becomes easy.

而且，藉由在驅動拾取頭及頂起機構之機構使用多自由度多關節機構，使驅動拾取及頂起的機構協調 動作，可在拾取/頂起動作設置傾斜度來使動作。將被貼附於切割膠帶的晶粒剝離時，可一邊使相對角度角度變化，一邊動作，成為在正交座標系的機構是不可能的動作，因此可改善拾取性能。 Moreover, by using a multi-degree-of-freedom multi-joint mechanism in the mechanism for driving the pickup head and the jacking mechanism, the mechanism for driving the pickup and jacking is coordinated Action, you can set the inclination in the pick/push action to make the action. When the die attached to the dicing tape is peeled off, it can be operated while changing the relative angle and angle, making it impossible to operate in the mechanism of the orthogonal coordinate system, so the pickup performance can be improved.

並且，藉由更換晶粒操縱工具，可將黏晶機變更成覆晶接合器。 Moreover, by replacing the die manipulation tool, the die bonding machine can be changed to a flip chip adapter.

以上，根據實施例來具體說明依本發明者所實施的發明，但本發明並非限於上述實施例，當然可為各種的變更。 In the above, the invention implemented by the present inventors has been specifically described based on the embodiments, but the present invention is not limited to the above embodiments, and of course various modifications are possible.

在實施例中，說明將盒配置於晶圓卡匣之上，沿著1方向來配置接合平台、晶圓平台的情況，但亦可將盒配置於晶圓卡匣旁邊。亦可在晶圓卡匣或盒的上下方向配置各種工具的儲存部。又，亦可群集工具性地將多機能機械手臂配置於中心，在其周邊配置晶圓卡匣、盒、接合平台、晶圓平台。 In the embodiment, the case where the cassette is arranged on the wafer cassette and the bonding platform and the wafer platform are arranged in one direction is described, but the cassette can also be arranged beside the wafer cassette. A storage section of various tools may also be arranged in the vertical direction of the wafer cassette or cassette. Furthermore, it is also possible to arrange a multi-function robot arm centrally in a cluster tool, and to arrange wafer cassettes, cassettes, bonding platforms, and wafer platforms around its periphery.

在實施例中，以1個的多機能機械手臂來搬送晶圓環、基板、晶粒，但亦可用複數的機械手臂來搬送。 In the embodiment, the wafer ring, the substrate, and the die are transported by one multi-function robot arm, but a plurality of robot arms may also be used.

在實施例中，說明有關使用垂直型多自由度多關節機構的情況，但多自由度多關節機構是亦可為水平型或併聯型。 In the embodiment, the case of using the vertical multi-degree-of-freedom multi-joint mechanism is described, but the multi-degree-of-freedom multi-joint mechanism may also be a horizontal type or a parallel type.

在實施例中，說明有關黏晶裝置，但亦可藉由將托盤放置於接合平台上，作為晶粒分類機使用。 In the embodiment, the crystal bonding device is described, but it can also be used as a die sorting machine by placing the tray on the bonding platform.

1‧‧‧黏晶裝置 1‧‧‧ Crystal bonding device

2‧‧‧裝置本體 2‧‧‧device body

3‧‧‧底部基礎 3‧‧‧Bottom foundation

4‧‧‧頂部基礎 4‧‧‧Top foundation

5‧‧‧中間基礎 5‧‧‧ intermediate foundation

10‧‧‧晶圓平台 10‧‧‧ Wafer platform

20‧‧‧接合平台 20‧‧‧joining platform

30‧‧‧晶圓卡匣 30‧‧‧wafer cassette

40、40L‧‧‧盒 40, 40L‧‧‧ box

50‧‧‧多機能機械手臂 50‧‧‧Multi-function mechanical arm

60‧‧‧頂起用機械手臂 60‧‧‧ Robot arm for jacking

D‧‧‧深度 D‧‧‧Depth

H‧‧‧高度 H‧‧‧ Height

W‧‧‧寬度 W‧‧‧Width

Claims (19)

一種黏晶裝置，其特徵係具備：裝置本體；晶圓卡匣，其係儲存保持晶圓的晶圓環；盒，其係儲存基板；晶圓平台，其係固定前述晶圓環；接合平台，其係為了接合從前述晶圓拾取的晶粒而載置基板；第1機械手臂，其係具備多自由度多關節機構，搬送前述晶圓環、前述基板及前述晶粒；及被配置於前述晶圓平台的下方，與前述第1機械手臂合作來拾取前述晶粒的第2機械手臂。 A die-bonding device, characterized by: a device body; a wafer cassette, which stores a wafer ring holding wafers; a box, which stores a substrate; a wafer platform, which fixes the wafer ring; a bonding platform , Which mounts the substrate in order to join the die picked from the wafer; the first robot arm, which is equipped with a multi-degree-of-freedom multi-joint mechanism, transports the wafer ring, the substrate, and the die; and is arranged on Below the wafer platform, a second robot arm that cooperates with the first robot arm to pick up the die. 一種黏晶裝置，其特徵係具備：裝置本體；晶圓卡匣，其係儲存保持晶圓的晶圓環；盒，其係儲存基板；晶圓平台，其係固定前述晶圓環；接合平台，其係為了接合從前述晶圓拾取的晶粒而載置基板；及第1機械手臂，其係具備多自由度多關節機構，搬送前述晶圓環、前述基板及前述晶粒，前述第1機械手臂係於其前端具備視覺攝影機。 A die-bonding device, characterized by: a device body; a wafer cassette, which stores a wafer ring holding wafers; a box, which stores a substrate; a wafer platform, which fixes the wafer ring; a bonding platform , Which mounts the substrate in order to join the die picked from the wafer; and the first robot arm, which has a multi-degree-of-freedom multi-joint mechanism, transports the wafer ring, the substrate, and the die, the first The robotic arm is equipped with a visual camera at the front end. 如申請專利範圍第1或2項之黏晶裝置，其中，前述第1機械手臂係可在其前端安裝更換工具。 For example, in the crystal bonding device of claim 1 or 2, the first robot arm can be installed with a replacement tool at the front end. 如申請專利範圍第3項之黏晶裝置，其中，前述工具為把持前述晶圓環的晶圓操縱工具、載放前述基板的基板操縱工具或拾取前述晶粒的晶粒操縱工具。 According to the die bonding apparatus of claim 3, the tool is a wafer handling tool that holds the wafer ring, a substrate handling tool that mounts the substrate, or a die handling tool that picks up the die. 如申請專利範圍第4項之黏晶裝置，其中，前述晶粒操縱工具係具備拾取前述晶粒，將前述拾取的晶粒背表反轉的機構。 As claimed in claim 4, the die bonding device, wherein the die manipulation tool is provided with a mechanism for picking up the die and inverting the picked die back. 如申請專利範圍第3項之黏晶裝置，其中，前述第1機械手臂係被固定於前述裝置本體的頂部之垂直型多自由度多關節機械手臂。 For example, in the crystal bonding device of claim 3, the first robot arm is a vertical multi-degree-of-freedom multi-joint robot arm fixed to the top of the device body. 如申請專利範圍第1項之黏晶裝置，其中，前述第2機械手臂係具備多自由度多關節機構，在其前端具備頂起前述晶粒的工具。 For example, in the crystal bonding device according to item 1 of the patent application, the second robot arm is provided with a multi-degree-of-freedom multi-joint mechanism, and a tool for pushing up the crystal grain is provided at the front end. 如申請專利範圍第7項之黏晶裝置，其中，前述工具可更換。 For example, the die-bonding device of the seventh patent application, in which the aforementioned tools can be replaced. 如申請專利範圍第7項之黏晶裝置，其中，前述第2機械手臂為被固定於前述裝置本體的底部之垂直型多自由度多關節機械手臂。 According to the die-bonding device of claim 7, the second robot arm is a vertical multi-degree-of-freedom multi-joint robot arm fixed to the bottom of the device body. 如申請專利範圍第1或2項之黏晶裝置，其中，前述晶圓卡匣係被配置於前述裝置本體的正面側，前述盒係被配置於前述裝置本體的正面側，前述晶圓平台係被配置於前述裝置本體的背面側，前述接合平台係被配置於前述晶圓卡匣與前述晶圓平台之間，前述第1機械手臂係沿著前述裝置本體的前後方向來 搬送前述晶圓、前述基板及前述晶粒。 The die bonding device of claim 1 or claim 2, wherein the wafer cassette is arranged on the front side of the device body, the cassette is arranged on the front side of the device body, and the wafer platform is It is arranged on the back side of the device body, the bonding platform is arranged between the wafer cassette and the wafer platform, and the first robot arm is along the front-back direction of the device body The wafer, the substrate, and the die are transferred. 如申請專利範圍第10項之黏晶裝置，其中，前述裝置本體的前述前後方向的長度比該裝置本體的寬度更長。 As in the die-bonding device of claim 10, the length of the device body in the front-rear direction is longer than the width of the device body. 如申請專利範圍第10項之黏晶裝置，其中，前述第1機械手臂係可在前端安裝更換工具。 For example, the die-bonding device of claim 10, wherein the first robot arm can be installed with a replacement tool at the front end. 如申請專利範圍第1或2項之黏晶裝置，其中，前述盒係被配置於前述晶圓卡匣的上下方向。 According to the die-bonding device according to item 1 or 2 of the patent application, wherein the cassette is arranged in the vertical direction of the wafer cassette. 如申請專利範圍第1或2項之黏晶裝置，其中，前述工具的儲存部係被配置於前述盒或前述晶圓卡匣的上方。 According to the die bonding device of claim 1 or 2, the storage part of the tool is arranged above the cassette or the wafer cassette. 一種半導體裝置的製造方法，其特徵係具備：(a)準備黏晶裝置之工程，該黏晶裝置係具備：裝置本體；晶圓卡匣，其係儲存晶圓環，該晶圓環係保持被貼於晶圓的切割膠帶；第1及第2盒，其係儲存基板；晶圓平台，其係固定前述晶圓環；接合平台，其係為了接合從前述晶圓拾取的晶粒而載置基板；第1機械手臂，其係具備多自由度多關節機構；及第2機械手臂，其係具備多自由度多關節機構；(b)藉由前述第1機械手臂來從前述晶圓卡匣搬送前述晶圓環至前述晶圓平台之工程； (c)藉由前述第1機械手臂來從前述第1盒搬送前述基板至前述接合平台之工程；(d)前述第1機械手臂與前述第2機械手臂合作來拾取前述晶粒之工程；(e)藉由前述第1機械手臂來搬送前述拾取後的晶粒，接合至前述接合平台上的基板之工程；及(f)藉由前述第1機械手臂來將接合有前述晶粒的基板搬送至前述第2盒之工程。 A method for manufacturing a semiconductor device, characterized by: (a) a project for preparing a die bonding device, the die bonding device is provided with: a device body; a wafer cassette, which stores a wafer ring, and the wafer ring system holds The dicing tape attached to the wafer; the first and second boxes, which are storage substrates; the wafer platform, which fixes the wafer ring; and the bonding platform, which is loaded to bond the die picked from the wafer The substrate; the first robotic arm, which has a multi-degree-of-freedom, multi-joint mechanism; and the second robotic arm, which has a multi-degree-of-freedom multi-joint mechanism; (b) the first robotic arm removes the wafer card The project of transferring the wafer ring from the cassette to the wafer platform; (c) The process of transferring the substrate from the first box to the bonding platform by the first robot arm; (d) The process of picking up the die by the cooperation of the first robot arm and the second robot arm; ( e) the process of transporting the picked die by the first robot arm and bonding the substrate on the bonding platform; and (f) transferring the substrate to which the die is bonded by the first robot arm To the aforementioned 2nd box project. 如申請專利範圍第15項之半導體裝置的製造方法，其中，前述(b)工程係具備：在前述第1機械手臂的前端安裝把持前述晶圓環的晶圓操縱工具之工程，前述(c)工程係具備：從前述第1機械手臂的前端的前述晶圓操縱工具更換成載放前述基板的基板操縱工具之工程；前述(d)工程係具備：從前述第1機械手臂的前端的前述基板操縱工具更換成拾取前述晶粒的晶粒操縱工具之工程，前述(f)工程係具備：從前述第1機械手臂的前端的前述晶粒操縱工具更換成前述基板操縱工具之工程。 A method for manufacturing a semiconductor device according to claim 15 of the patent scope, wherein the (b) process is a process of installing a wafer manipulating tool that holds the wafer ring at the front end of the first robotic arm, and the (c) The engineering department includes: the process of replacing the wafer handling tool at the front end of the first robotic arm with a substrate handling tool on which the substrate is placed; the (d) engineering department includes the substrate from the front end of the first robotic arm The process of replacing the operating tool with a die operating tool that picks up the die. The (f) process includes the process of replacing the die operating tool from the front end of the first robotic arm with the substrate operating tool. 如申請專利範圍第15項之半導體裝置的製造方法，其中，前述(b)工程係具備：以前述第1機械手臂的前端的視覺攝影機來確認前述晶圓卡匣的有無之工程、及以前 述視覺攝影機來確認前述晶圓環的有無之工程，前述(c)工程係具備：以前述第1機械手臂的前端的視覺攝影機來確認前述盒的有無之工程、及以前述視覺攝影機來確認前述基板的有無之工程，前述(d)工程係具備：從前述第1機械手臂的前端的基板操縱工具更換成拾取前述晶粒的晶粒操縱工具之工程，前述(f)工程係具備：以前述第1機械手臂的前端的視覺攝影機來確認晶圓對準之工程、及以前述視覺攝影機來辨識基板對準之工程。 A method for manufacturing a semiconductor device as claimed in item 15 of the patent scope, wherein the (b) process includes: a process for confirming the presence or absence of the wafer cassette with a visual camera at the front end of the first robot arm A visual camera to confirm the presence or absence of the wafer ring, the (c) project is provided with: a visual camera at the front end of the first robotic arm to confirm the presence or absence of the cassette, and a visual camera to confirm the foregoing For the presence or absence of the substrate, the (d) engineering system includes: replacing the substrate manipulation tool at the front end of the first robotic arm with a die manipulation tool that picks up the die, and the (f) engineering system includes: The process of confirming the wafer alignment by the visual camera at the front end of the first robotic arm, and the process of identifying the substrate alignment by the aforementioned visual camera. 如申請專利範圍第15項之半導體裝置的製造方法，其中，前述(d)工程係設置預定的角度來使前述第1機械手臂的前端的晶圓操縱工具接觸於前述晶粒，設置預定的角度來使前述第2機械手臂的前端部接觸於前述切割膠帶，而拾取前述晶粒。 A method for manufacturing a semiconductor device according to item 15 of the patent application scope, wherein the (d) process is set at a predetermined angle to contact the wafer handling tool at the front end of the first robotic arm with the die and set a predetermined angle Then, the tip of the second robot arm is brought into contact with the dicing tape to pick up the die. 如申請專利範圍第15項之半導體裝置的製造方法，其中，前述(b)工程係從前述晶圓卡匣沿著前述裝置本體的前後方向來搬送前述晶圓環至前述晶圓平台，前述(c)工程係從前述第1盒搬送前述基板於前述裝置本體的前後方向至前述接合平台，前述(e)工程係將前述拾取後的晶粒搬送於前述裝置的前後方向，接合至前述接合平台上的基板，前述(f)工程係將接合有前述晶粒的基板搬送於前 述裝置本體的前後方向至前述第2盒。 A method for manufacturing a semiconductor device according to claim 15 of the patent application, wherein the (b) process is to transport the wafer ring to the wafer platform from the wafer cassette along the front-rear direction of the device body, the ( c) The process is to transport the substrate from the first box in the front-back direction of the device body to the bonding platform, and the (e) process is to transfer the picked die to the front-back direction of the device and bond to the bonding platform On the substrate, the (f) engineering department will transfer the substrate with the die attached to the front The front-back direction of the main body of the apparatus reaches the aforementioned second box.
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