TWI719896B - Die bonding device, peeling unit, chuck and manufacturing method of semiconductor device - Google Patents

Abstract

The subject of the present invention is to provide a technology that can increase the rigidity of the crystal grains. The solution is a die-bonding device, which is equipped with: The chuck, which absorbs the dies on the cutting tape; and The peeling unit is provided with: a movable platform that abuts against the dicing tape located below the die, and a fixed platform that absorbs the dicing tape at a peripheral edge more than the die. The dicing tape peels off the aforementioned die. The movable platform has a concave portion for bending the crystal grain into a depression on the upper surface. The lower surface of the chuck has a curved surface that fits with the upper surface of the curved die.

Description

Die bonding device, peeling unit, chuck and manufacturing method of semiconductor device

This case is about die bonding devices, such as die bonding machines that can handle thin die.

Generally, in a die bonder that mounts a semiconductor wafer called a die on the surface of, for example, a wiring board or a lead frame (hereinafter collectively referred to as a substrate), a suction nozzle such as a chuck is generally used to transfer the die to the substrate. The operation (work) of applying a pressing force and heating the bonding material to perform bonding is repeated.

In the die bonding process using a die bonding device such as a die bonder, there is a peeling process for peeling the divided die from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling process, the die is lifted from the back of the dicing tape by lifting pins or blocks, and the dicing tape held in the die supply part is peeled off one by one, and transported using suction nozzles such as chucks. To the substrate.

In recent years, for the purpose of promoting high-density mounting of semiconductor devices, the thinning of packages has been progressing day by day. For example, a multilayer package in which a plurality of dies are three-dimensionally mounted on a wiring board has been put into practical use. In order to prevent an increase in package thickness when such a package on package is combined, the thickness of the die is required to be as thin as 30 μm or less. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2018-120938 A

(The problem to be solved by the invention)

Once the die becomes thinner, the rigidity of the die is extremely low compared to the adhesive force of the dicing tape. The subject of this case is to provide a technology that can increase the rigidity of the die. Other issues and novel features can be clearly understood from the description of this specification and the drawings. (Means to solve the problem)

If you briefly explain the outline of the representative person in this case, it will be as follows. That is, the die bonding device is equipped with: The chuck, which absorbs the dies on the cutting tape; and The peeling unit is provided with: a movable platform that abuts against the dicing tape located below the die, and a fixed platform that absorbs the dicing tape at a peripheral edge more than the die. The dicing tape peels off the aforementioned die. The movable platform has a concave portion for bending the crystal grain into a depression on the upper surface. The lower surface of the chuck has a curved surface that fits with the upper surface of the curved die. [Effects of the invention]

According to this case, the rigidity of the crystal grains can be improved.

Hereinafter, the relevant embodiments and modified examples will be described with reference to the drawings. However, in the following description, the same reference numerals are attached to the same constituent elements, and overlapping descriptions may be omitted. In addition, in order to make the description clearer, the drawings sometimes schematically show the width, thickness, shape, etc. of each part compared to the actual form, but they are merely examples and do not limit the interpreter of the present invention. [Example]

Fig. 1 is a top view showing the outline of the die bonder of the embodiment. Fig. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1.

The die bonding machine 10, which is an example of the die bonding device, roughly has: a die supply unit 1, a pick-up unit 2, an intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate carry-out unit 7, and monitoring and control The control unit 8 for the operation of each unit. The die supply unit 1 supplies die D mounted on a substrate S, which is a product area (hereinafter referred to as a package area P) to be printed as one or a plurality of final packages. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply part 1 will be arranged on the front side of the die bonder 10, and the bonding part 4 will be arranged on the back.

First, the die supply unit 1 supplies the die D mounted on the package area P of the substrate S. The die supply unit 1 has a wafer holding table 12 that holds a wafer 11 and a peeling unit 13 shown by a dotted line that pushes up the die D from the wafer 11. The die supply unit 1 is moved in the XY axis direction by a driving means not shown, and the picked-up die D is moved to the position of the peeling unit 13.

The pick-up unit 2 has: a pick-up head 21 for picking up the die D, a Y-drive unit 23 for the pick-up head that moves the pick-up head 21 in the Y-axis direction, and a not-shown that moves the chuck 22 up and down, rotates and moves in the X-axis direction. Each drive section shown. The pick-up head 21 has a chuck 22 (also refer to FIG. 2) for sucking and holding the raised die D at the front end, and picks up the die D from the die supply unit 1 and places it on the intermediate platform 31. The pick-up head 21 has each drive part which is not shown in figure which raises and lowers, rotates, and moves the chuck 22 in the X-axis direction.

The intermediate platform 3 has an intermediate platform 31 on which the die D is temporarily placed, and a platform recognition camera 32 for recognizing the die D on the intermediate platform 31.

The bonding part 4 picks up the die D from the intermediate stage 31 and bonds it to the package area P of the substrate S being transported, or bonds it in the form of being laminated on the die that has been bonded to the package area P of the substrate S . The bonding part 4 is a bonding head 41 provided with a chuck 42 (also refer to FIG. 3) for sucking and holding the die D at the tip similar to the pickup head 21, and a Y driving part that moves the bonding head 41 in the Y-axis direction 43, and a substrate recognition camera 44 that picks up the position recognition mark (not shown) of the package area P of the substrate S and recognizes the bonding position. With such a configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the imaging data of the substrate recognition camera 44 .

The transport unit 5 has a substrate transport pawl 51 that grips and transports the substrate S, and a transport path 52 through which the substrate S is moved. The substrate S is moved by a ball screw (not shown) provided along the transport path 52 to drive a nut (not shown) of the substrate transport claw 51 provided on the transport path 52. The substrate conveying claw 51 may also be driven by a transmission belt. With such a configuration, the substrate S is moved from the substrate supply section 6 to the bonding position along the conveyance path 52, and after bonding, it moves to the substrate unloading section 7 and delivers the substrate S to the substrate unloading section 7.

The control unit 8 is a memory that stores a program (software) that monitors and controls the operations of the above-mentioned components of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

Next, the structure of the crystal grain supply unit 1 will be described with reference to FIGS. 3 and 4. Fig. 3 is a diagram showing an external perspective view of the crystal grain supply part of Fig. 1. Fig. 4 is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 1.

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY axis direction), and a peeling unit 13 that moves in the vertical direction. The wafer holding table 12 has an expansion ring 15 holding the wafer ring 14, and a dicing tape 16 held in the wafer ring 14 and then a plurality of dies D positioned on a horizontal support ring 17. The peeling unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is peeled off. As a result, the dicing tape 16 held on the wafer ring 14 is stretched, and the gap between the die D is enlarged. The peeling unit 13 acts on the die D from below the die D, so that the pick-up of the die D is improved. Promote. In addition, the adhesive for attaching the die to the substrate is changed from a liquid to a thin film, and a thin film called Die Attach Film (DAF) 18 is attached between the wafer 11 and the dicing tape 16 Adhesive materials. For the wafer 11 having the die attach film 18, the dicing is performed for the wafer 11 and the die attach film 18. Therefore, in the peeling process, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In addition, the die attach film 18 is attached to the back surface of the die D, but the die D may be omitted to describe the peeling process.

Next, the peeling unit 13 and the chuck 22 attached to the pickup 21 will be described with reference to FIGS. 5 to 7. Fig. 5 is a diagram illustrating the peeling unit of Fig. 4, Fig. 5(a) is a top view, and Fig. 5(b) is a cross-sectional view of the movable platform along the line B-B of Fig. 5(a). 6 is a diagram illustrating the structure and operation of the peeling unit of FIG. 4, FIG. 6 (a) is a cross-sectional view of the main part of the BB line of FIG. 5 (a), dicing tape, die and chuck, FIG. 6 (b) ) Is a cross-sectional view of the main part of the CC line of Fig. 5(a), the dicing tape, the die, and the chuck, and Fig. 6(c) is the main part, the dicing tape, and the dicing tape in the state of moving from the movable platform of Fig. 6(a). Cross-sectional view of die and chuck. Fig. 7 is a diagram illustrating the chuck of Fig. 2, Fig. 7(a) is a side view of the chuck and the chuck jig in the B direction, and Fig. 7(b) is a side view of the chuck and the chuck jig in the C direction.

The frame body 131 of the peeling unit 13 has a cylindrical shape, and includes a groove 132a as an opening at the center of the upper surface, a fixed platform 132 around it, and a movable platform 133 in the groove 132a. The shape of the groove 132a in plan view is a rectangular shape formed in the X-axis direction longer than the Y-axis direction. The movable platform 133 has a planar shape smaller than the groove 132a, and is configured in a rectangular shape with the X-axis direction longer than the Y-axis direction. The movable platform 133 is the X-axis direction that is the first direction that is movable in the vertical direction (Z-axis direction) and the horizontal direction.

The fixed platform 132 provided in the peripheral part of the upper surface of the peeling unit 13 is provided with a plurality of suction ports (not shown). In addition, a plurality of grooves connecting the plurality of suction ports may be provided. When the inside of each of the suction port and the groove raises the peeling unit 13 so that the upper surface contacts the back surface of the dicing tape 16, the pressure is reduced by a suction mechanism (not shown). At this time, the back surface of the dicing tape 16 is attracted to the bottom, and it is in close contact with the upper surface of the peeling unit 13. The fixed platform 132 is a dicing tape 16 that closely adheres to the outer periphery of the die D to be picked up. In addition, the suction mechanism of the suction port 141 under the movable platform 133 and the suction mechanism of the fixed platform 132 may be independent, and the suction mechanism may be turned ON/OFF separately. The peeling unit 13 is provided with a slider drive mechanism (not shown) that slides the movable platform 133 in accordance with an instruction from the control unit 8.

Next, the details of the peeling unit 13 and the movable platform 133 will be described. On the upper surface of the frame 131 of the peeling unit 13 are provided: a fixed platform 132, a groove 132a recessed from the fixed platform 132 toward the inside of the frame 131 of the peeling unit 13, and the outer peripheral side of the peeling unit 13 provided in the groove 132a , The convex part 132b protruding more than the bottom surface of the groove part 132a. The side surface 132f of the groove portion 132a is the same surface as the guide surface 132g located on both sides of the convex portion 132b, and linearly extends from the inner peripheral side of the peeling unit 13 toward the outer peripheral side. The convex portion 132b is located between the guide surfaces 132g and holds the level of the surface flatly, and its height is smaller than the depth of the groove portion 132a. The bottom surface of the groove portion 132a and the surface of the convex portion 132b are connected by an inclined surface 132c extending from the bottom surface of the convex portion 132b toward the surface of the convex portion 132b. On the bottom surface of the groove 132a, a suction port 141 as a hole communicating with the inside of the peeling unit 13 is provided.

The groove portion 132a is provided with a movable platform 133 that is approximately the same width as the width between the groove portion 132a and the side surface 132f and slides from the groove portion 132a in the direction of the groove portion 132a. The movable platform 133 faces the end surface 132e of the groove portion 132a along the sliding direction (X-axis direction) as the rear end 133a, and the end on the convex portion 132b side is the front end 133c. The movable platform 133 is provided with a concave surface-shaped mounting portion 133h on which the die D is mounted via the dicing tape 16, and an inclined portion 133g which is then inclined downward from the mounting surface to the mounting portion 133h. The length of the movable platform 133 in the sliding direction is shorter than the length of the groove 132a in the sliding direction. The thickness of the mounting portion 133h of the movable platform 133 is greater than the depth of the groove 132a. Therefore, if the rear end 133a of the movable platform 133 and the groove 132a are The movable platform 133 is fitted into the groove 132a through the gap between the end surface 132e of the movable platform 133, and the mounting portion 133h on the surface of the movable platform 133 is higher than the upper surface of the fixed platform 132. The side surface 133b of the movable platform 133 and the side surface 132f of the groove 132a constitute a sliding surface. In addition, the gap formed by the rear end 133 a of the movable platform 133 and the end surface 132 e of the groove 132 a extends in the vertical direction toward the inner surface of the peeling unit 13 to constitute a vertical groove for sucking the dicing tape 16. In addition, the gap formed by the side surfaces 133b on both sides of the movable platform 133 and the side surfaces 132f on both sides of the groove 132a extends in the vertical direction toward the inner surface of the peeling unit 13 to constitute a vertical groove for sucking the dicing tape 16.

Since it is configured as described above, the upper surface of the peeling unit 13 is formed with a z-shaped suction opening 140 surrounded by the side surface 132f, the end surface 132e, and the guide surface 132g of the groove 132a. The suction opening 140 communicates with the peeling unit through the suction opening 141. 13's internal communication.

As shown in FIG. 5(b), the thickness of the mounting portion 133h of the movable platform 133 where the die D is mounted via the dicing tape 16 becomes thinner from the position near the rear end 133a side toward the front end 133c side. The end 133a is provided with a chamfer 133i. In addition, there is provided an inclined portion 133g that is inclined from the surface (upper surface) side to the back surface (lower surface) side from the mounting portion 133h to the front end 133c. The portion of the mounting portion 133h that is inclined downward from the rear end 133a side to the front end 133c side, and the front end 133c side of the inclined portion 133g that is more inclined than the inclined portion 133g is provided in the area where the die D is not mounted. The length of the mounting portion 133h is shorter than the length of the die D. The back side of the movable platform 133 is flat. As shown in Figure 6(b), in a cross-sectional view from the X-axis direction (YZ plane orthogonal to the X-axis direction), the upper side of the rectangle whose Y-axis direction is longer than the Z-axis direction will be concave downward The curve is formed. That is, the surface of the mounting portion 133h is a curved surface that is concave upward like the inner surface (R-shaped surface) of a circular pipe. Thereby, the die D is bent. In addition, the warpage generated by the warped die D is the same level as the warped die on the dicing tape 16 in the state before contact with the peeling unit 13. For example, the height from the bottom of the valley of the curved crystal grain D to the end of the crystal grain D is more than 0 μm and 20 μm or less.

In addition, the width of the groove 132a, that is, the width of the suction opening 140 is slightly larger than the width of the movable platform 133. The width of the movable platform 133 and the width of the die D are approximately the same, respectively. Each side surface 132f of the groove 132a and the movable platform 133 The side surfaces 133b of the slidable surface face each other across a gap in a slidable manner.

As shown in FIG. 7, the chuck 22 is attached to the chuck jig 25 provided in the pickup head 21. As shown in Figs. 6(a) and 7(a), the chuck 22 is a side view and a cross-sectional view from the Y-axis direction as the second direction. The X-axis direction (sliding direction) is higher than the Z-axis direction (up and down direction). ) Longer rectangular shape, as shown in Fig. 6(b) and Fig. 7(b), in a side view and a cross-sectional view from the X-axis direction (a cross-sectional view of the YZ plane orthogonal to the X-axis direction) in Y The lower side of the rectangle whose axis direction is longer than the Z axis direction will be formed by a downward convex curve. That is, the adsorption surface 22a of the chuck 22 that adsorbs the die D is formed into a convex curved surface like the outer surface (R-shaped surface) of a cylinder. That is, the suction surface 22a of the chuck 22 is formed with a convex curved surface, and the die D and the dicing tape 16 are sandwiched and fitted with the concave curved surface of the mounting portion 133h of the movable platform 133. Thereby, the bending of the die D is maintained.

Next, referring to Figs. 3, 4, and 6, a description will be given of a pick-up operation using the peeling unit 13 constructed as described above.

First, ultraviolet rays are irradiated to the dicing tape 16 positioned on the wafer holding table 12 shown in FIGS. 3 and 4. Thereby, the adhesive applied on the dicing tape 16 is hardened and its adhesiveness is reduced, so the interface between the dicing tape 16 and the die attaching film 18 is easily peeled off.

Next, the control unit 8 lowers the expansion ring 15 of the wafer holding table 12 to lower the wafer ring 14 attached to the peripheral portion of the dicing tape 16 to the lower side. In this way, the dicing tape 16 receives a strong tension from the center part toward the peripheral part, and stretches in the horizontal direction without slack.

Secondly, as shown in FIG. 4, the control unit 8 moves the wafer holding table 12 horizontally (pitch movement) so that the die D to be picked up will be directly above the peeling unit 13, so that the upper surface of the peeling unit 13 will contact Move the peeling unit 13 to the upper side by cutting the back side of the tape 16. At this time, as shown in FIG. 6(a), the rear end 133a of the movable platform 133 is positioned facing the end surface 132e of the groove 132a with a gap therebetween, and the lower surface on the front end 133c side of the movable platform 133 is placed on the groove. The surface of 132a is supported by the groove 132a. Moreover, as shown in FIG. 6(a)(b), the mounting portion 133h on the surface of the movable platform 133 is higher than the upper surface of the fixed platform 132.

Once the upper surfaces of the fixed platform 132 of the peeling unit 13 and the mounting portion 133h of the movable platform 133 are in close contact with the lower surface of the dicing tape 16, the control unit 8 stops the ascent of the peeling unit 13. At this time, the control unit 8 sucks the dicing tape 16 through the suction port and groove of the fixed platform 132 and the gap between the fixed platform 132 and the movable platform 133. At this time, as shown in FIG. 6( b ), the die D and the dicing tape 16 are bent into a shape imitating the concave curved surface of the upper surface of the mounting portion 133 h of the movable platform 133.

The control unit 8 lowers the pickup head 21 (chuck 22), positions it on the picked die D, and lands the chuck 22 to attract the die D through the suction hole (not shown) of the chuck 22. At this time, the convex curved surface of the lower surface of the chuck 22 is fitted with the concave curved surface of the upper surface of the mounting portion 133h of the movable platform 133 via the die D and the dicing tape 16, and the curvature of the die D is maintained.

The control part 8 stops the suction (suction OFF) of the dicing tape 16 by the fixed platform 132 and the suction port 141, and makes the movable platform 133 slide. In addition, the adsorption OFF can also be weakly adsorbed at a pressure close to atmospheric pressure.

Once the movable platform 133 starts to slide toward the outer peripheral side of the peeling unit 13, the back surface of the movable platform 133 comes into contact with the inclined surface 132c connecting the convex portion 132b and the bottom surface of the groove portion 132a. Then, if the movable platform 133 slides further, the back surface of the movable platform 133 will rise along the inclined surface 132c. Then, if the movable platform 133 slides further, the front end 133c of the movable platform 133 will pass over the inclined surface 132c, and the back surface of the movable platform 133 will contact the surface of the convex part 132b. After that, the control unit 8 uses the fixed platform 132 and the suction port 141 to start suction (suction ON) at a pressure close to the vacuum. Since the lower surface of the movable platform 133 is supported on the surface of the convex portion 132b shown in FIG. 6(c), the lower surface of the movable platform 133 is separated from the bottom surface of the groove 132a. Before that, the movable platform 133 was slid with the back surface of the movable platform 133 being substantially parallel to the surface of the groove 132a. As a result, as shown in FIG. 6( c ), a part of the die D located above the suction port 141 is peeled from the surface 16 a of the dicing tape 16.

Once the movable platform 133 is slid, the die D is almost peeled off from the dicing tape 16, so the control unit 8 raises the chuck 22 to pick up the die D. Once the die D is picked up, the control unit 8 returns the movable platform 133 to the initial position, returns the pressure of the suction port 141 and the suction pressure of the fixed platform 132 to atmospheric pressure, and ends the picking operation.

Next, FIG. 8 is used to explain the manufacturing method of the semiconductor device using the die bonder of the embodiment. FIG. 8 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder of FIG. 1.

(Step S11: Wafer and substrate import process) The wafer ring 14 holding the dicing tape 16 is stored in a wafer cassette (not shown) and carried into the die bonder 10. The dicing tape 16 is attached with the die D divided from the wafer 11. The control unit 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. Then, the substrate S is prepared and loaded into the die bonder 10. The control section 8 mounts the substrate S on the substrate transport claw 51 in the substrate supply section 6.

(Step S12: Pick up the project) The control unit 8 peels the die D as described above, and picks up the peeled die D from the wafer 11. In this way, the die D peeled from the dicing tape 16 together with the die attach film 18 is sucked and held by the chuck 22, and is transported to the next process (step S13). Then, once the die D is transported to the chuck 22 of the next process and returned to the die supply unit 1, the next die D is peeled from the dicing tape 16 according to the above-mentioned procedure, and then the next die D is removed from the dicing tape 16 according to the same procedure. , 1 peeled die D.

(Step S13: Joining process) The control unit 8 mounts the picked-up die on the substrate S or stacks it on the bonded die. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, and uses the bonding head 41 to pick up the die D from the intermediate stage 31 again, and bond it to the substrate S to be transported.

(Step S14: Board unloading process) The control unit 8 is the substrate transport unit 7 to take out the substrate S to which the die D is bonded from the substrate transport claw 51. The substrate S is carried out from the die bonder 10.

As described above, the die D is mounted on the substrate S via the die attach film 18 and is carried out from the die bonder. Then, in the wire bonding process, it is electrically connected to the electrode of the substrate S via the Au wire. Next, the substrate S with the die D installed will be carried into the die bonder, and the second die D will be laminated on the die D mounted on the substrate S via the die attach film 18, and the die D will be transferred from the die bonder After being carried out, in the wire bonding process, it is electrically connected to the electrode of the substrate S via the Au wire. After the second die D is peeled from the dicing tape 16 by the aforementioned method, it is transported to the die bonding process to be laminated on the die D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process, and a plurality of dies D and Au wires are sealed with a molding resin (not shown), thereby completing the stack package.

According to the embodiment, since the R (concave) shape is provided on the sliding movable platform, the crystal grains are bent. Therefore, the cross-sectional secondary moment of the crystal grains can be increased, the rigidity can be improved, and it can respond to the stress accompanying peeling. For an easy-to-understand analogy, if thin paper such as A4 size copy paper is set horizontally and the end of the thin paper is pinched with your fingers, the weight of the thin paper will cause the end opposite to the pinched end to hang down. To the bottom. On the other hand, if the thin paper is bent (deformed) to form a depression on the upper surface, and the end is pinched with fingers, the end on the opposite side to the pinched end does not hang down, and the thin paper maintains its shape.

As described above, when combining a stack package in which a plurality of dies are three-dimensionally mounted on a substrate, in order to prevent an increase in package thickness, it is required to reduce the thickness of the die to 30 μm or less. In addition, the thickness of the die is thicker than the thickness of the die attach film. On the other hand, the thickness of the dicing tape is about 100 μm, so the thickness of the dicing tape is 3 to 5 times the thickness of the formed die.

If such a thin die is to be peeled from the dicing tape, the deformation of the die following the deformation of the dicing tape will be more likely to occur significantly. However, the die bonder of this embodiment can reduce the pick-up of the die from the dicing tape. Deformation of the grains. Thereby, the peeling of crystal grains (referred to as thin crystal grains) having a thickness of 30 μm or less from the dicing tape can be stabilized. As a result, the quality and productivity of thin dies including 3D NAND (NAND flash memory with three-dimensional structure) can be improved.

<Modifications> Hereinafter, a few examples are given to show representative modifications of the embodiment. In the description of the following modification examples, parts having the same configuration and functions as those described in the above-mentioned embodiment may use the same reference numerals as in the above-mentioned embodiment. In addition, the description of such a part is within a range that is not technically contradictory, and the description of the above-mentioned embodiment can be appropriately used. In addition, part of the above-mentioned embodiment and all or part of the plural modified examples can be appropriately combined and applied within a range that is not technically contradictory.

(First modification) Next, the structure of the peeling unit related to the first modified example will be described using FIGS. 9 to 11. Fig. 9 is a top view of a peeling unit according to a first modification. 10 is a diagram illustrating the structure and operation of the peeling unit in FIG. 9, FIG. 10(a) is a cross-sectional view of the peeling unit along the EE line of FIG. 9, and FIG. 10(b) is a cross-sectional view of the peeling unit along the FF line in FIG. 9 Figure. Fig. 11 is a diagram illustrating the structure and operation of the peeling unit of Fig. 9, Fig. 11(a) is a cross-sectional view of the peeling unit and the chuck along the EE line of Fig. 9, and Fig. 11(b) is the peeling of the FF line of Fig. 9 Sectional view of the unit and the chuck.

As shown in FIG. 9, the frame body 131 of the peeling unit 13 has a cylindrical shape, and includes an opening 132o located in the center of the upper surface, a fixed platform 132 around it, and a movable platform 133 in the opening 132o. The opening 132o is provided with a movable platform 133 that moves up and down, and the fixed platform 132 is provided with a plurality of suction ports (not shown) and a plurality of grooves (not shown). When the inside of each of the suction port and the groove is raised so that the upper surface of the peeling unit 13 is brought into contact with the back of the dicing tape 16, the pressure is reduced by a suction mechanism not shown, so that the back of the dicing tape 16 will be in close contact. On the top of the fixed platform 132.

The movable platform 133 is composed of four blocks 102a to 102d that push up the dicing tape 16 to the upper side. The four blocks 102a to 102d have a ring-shaped block 102b arranged on the inner side of the outermost ring-shaped block 102a, a ring-shaped block 102c is arranged on the inner side, and a columnar zone is arranged on the inner side. Block 102d.

A gap G is provided between the fixed platform 132 and the outer block 102a and between the four blocks 102a to 102d. The inside of these gaps G can be decompressed by a suction mechanism not shown. Once the back of the dicing tape 16 touches the top of the peeling unit 13, the dicing tape 16 will be attracted to the bottom and close to the block. Above 102a~102d.

The shape of the block 102a in plan view is the same rectangle as the crystal grain D to be peeled off, and its size is slightly smaller than the size of the crystal grain D. The size of the frame-shaped block 102b in plan view arranged inside the block 102a is about 1 mm to 3 mm smaller than the size of the block 102a. In addition, the size of the block 102c arranged inside the block 102b is about 1 mm to 3 mm smaller than the block 102b. In addition, the size of the block 102d arranged inside the block 102c is about 1 mm to 3 mm smaller than the block 102c. In addition, the width of the block 102d is larger than the width of each of the blocks 102a to 102c (the length between the outer side and the inner side). In this embodiment, considering the ease of processing, etc., the shapes of the blocks 102a to 102d are formed into rectangular shapes, but the shapes are not limited to this, and for example, elliptical shapes may be formed.

As shown in FIG. 10, the height of the upper surface of each of the above-mentioned four blocks 102a to 102d is different from each other in the initial state, and the lifting amount of the block 102a is larger than the lifting amount of the block 102b , The jacking amount of block 102b is greater than that of block 102c, the jacking amount of block 102c is greater than that of block 102d, the inner block is 0~20μm lower than the outer degree. That is, the heights of the blocks 102a to 102d are set in such a way that the die D and the dicing tape adsorbed on the surface of the movable platform 133 will form a concave curved surface like a spherical surface (SR-shaped surface). As a result, the die D will bend. In addition, the warpage generated by the warped die D is the same level as the warped die on the dicing tape 16 in the state before contact with the peeling unit 13. In addition, the block 102a is slightly lower than the height of the upper peripheral portion (fixed platform 132) of the peeling unit 13.

Each of the blocks 102a to 102d is independent and can move up and down, and the amount of movement can also be changed by the control unit 8.

Fig. 12 is a diagram illustrating the chuck of Fig. 11, Fig. 12(a) is a side view of the chuck and the chuck jig in the E direction, and Fig. 12(b) is a side view of the chuck and the chuck jig in the F direction.

As shown in FIG. 12, the chuck 22 is attached to the chuck jig 25 provided in the pickup head 21. As shown in Fig. 12(a), the chuck 22 has a rectangular shape that is longer in the X-axis direction than the Z-axis direction (up-down direction) in a side view and a cross-sectional view from the Y-axis direction (cross-sectional view of the XZ plane) The lower side will be formed by a downward convex curve, as shown in Figure 12(b), in a side view and a cross-sectional view from the X-axis direction (a surface that crosses the X-axis direction, such as a cross-sectional view of the orthogonal YZ plane In ), the lower side of the rectangle whose Y-axis direction is longer than Z-axis direction will be formed by a downward convex curve. That is, the adsorption surface 22a of the chuck 22 that adsorbs the die D is a spherical surface (SR-shaped surface). That is, the suction surface 22 a of the chuck 22 is formed with a convex curved surface, and is capable of being fitted with the concave curved surface of the die D formed on the blocks 102 a to 102 d of the movable platform 133 and the dicing tape 16. Thereby, the bending of the die D is maintained.

Next, referring to Figs. 3, 4, and 10, a description will be given of a pick-up operation using the peeling unit 13 constructed as described above.

First, the dicing tape 16 positioned on the wafer holding table 12 shown in FIGS. 3 and 4 is irradiated with ultraviolet rays in the same manner as in the embodiment. Thereby, the adhesive applied on the dicing tape 16 is hardened and its adhesiveness is reduced, so the interface between the dicing tape 16 and the die attaching film 18 is easily peeled off.

Next, as in the embodiment, by lowering the expansion ring 15 of the wafer holding table 12, the wafer ring 14 attached to the peripheral portion of the dicing tape 16 is lowered downward. In this way, the dicing tape 16 receives a strong tension from the center part toward the peripheral part, and stretches in the horizontal direction without slack.

Next, as shown in FIG. 4, the center of the peeling unit 13 (blocks 102a to 102d) will be located directly below the crystal grain D (the crystal grain D located in the center of the same figure) that is the target of peeling. In this way, the wafer holding table 12 is moved, and the chuck 22 is moved above the die D. The bottom surface of the chuck 22 supported by the pickup head 21 is provided with a suction port (not shown) whose inside is decompressed, and it is possible to selectively suction and hold only one crystal grain D to be peeled off.

Next, as shown in FIG. 10, the upper surfaces of the blocks 102a, 102b, 102c, and 102d are set to different heights to form a state slightly lower than the upper surface of the fixed platform 132 (the above-mentioned initial state) , The peeling unit 13 is raised so that its upper surface is in contact with the back surface of the dicing tape 16, and the inside of the suction port, groove, and gap G of the aforementioned fixed platform 132 is reduced in pressure. Thereby, the dicing tape 16 below the other die D adjacent to the die D to be peeled is closely attached to the fixed platform 132, and the dicing tape 16 below the die D to be peeled is Close to the upper surface of the blocks 102a to 102d, a concave curved surface is formed on the die D and the dicing tape 16. On the other hand, almost simultaneously with the lifting of the peeling unit 13, the chuck 22 is lowered so that the bottom surface of the chuck 22 is brought into contact with the upper surface of the crystal grain D to be peeled, whereby the crystal grain D is attracted and lightly pressed downward.

Secondly, as shown in FIG. 11, the positional relationship of the four blocks 102a, 102b, 102c, and 102d is still maintained, and the load is applied to the back of the dicing tape 16 by lifting up to the top at the same time. , Together with the dicing tape 16, lift up the die D to peel off the periphery.

Secondly, if the block 102a arranged on the outermost side is pulled down to the bottom, the peeling of the die attach film 18 and the dicing tape 16 will start. At this time, the dicing tape 16 below the other die D adjacent to the die D to be peeled off is sucked downward and brought into close contact with the fixed platform 132, thereby preventing the peeling of the other die D. When the block 102a is pulled down, in order to promote the peeling of the die D, the internal pressure of the gap G between the block 102a, the block 102b, the block 102c, and the block 102d is reduced to reduce the pressure of the die D The lower dicing tape 16 is attracted to the lower side. Then, the inside of the groove of the fixed platform 132 is depressurized, and the dicing tape 16 contacting the fixed platform 132 is brought into close contact with the upper surface of the fixed platform 132.

Secondly, if the block 102b arranged second from the outermost side is pulled down to the bottom, the peeling of the die attach film 18 and the dicing tape 16 will progress toward the center of the die D. At this time, the upper surface of the block 102a is lower than the upper surface of the fixed platform 132, but the upper surface of the block 102b is higher than the upper surface of the fixed platform 132.

Secondly, if the block 102c arranged third from the outermost side is pulled down to the bottom, the peeling of the die attach film 18 and the dicing tape 16 will progress further toward the center of the die D. At this time, the upper surface of the block 102a, the block 102b, and the block 102c is located lower than the upper surface of the fixed platform 132.

Then, the block 102d is pulled down to the bottom, and the chuck 22 is pulled up to the top, whereby the die attach film 18 will be completely peeled off from the dicing tape 16.

According to the first modification example, since the shape of the concave portion is provided by the plural blocks constituting the movable platform, the crystal grains are bent. Therefore, the second moment of the cross section of the crystal grains can be increased similarly to the embodiment, and the rigidity can be improved. For the stress accompanying peeling.

(Second modification) In the first modification, the state shown in FIG. 10( b) is pulled down sequentially from the outer block, but the die D may be peeled off from the dicing tape 16 by sequentially pushing up from the inner block. That is, first, the block 102d is raised higher than the block 102a. Secondly, the block 102c is higher than the block 102a and lower than the block 102d. Secondly, the block 102b is higher than the block 102a and lower than the block 102c. Secondly, the block 102a is raised lower than the block 102b.

In the above, the invention developed by the inventors has been specifically described based on the embodiment and the modification. However, the present invention is not limited to the above-mentioned embodiment and the modification. Of course, various modifications can be implemented.

For example, the embodiment illustrates an example in which a convex portion (step difference) for peeling is provided in front of the movable platform, but the convex portion (step difference) may not be provided, and the movable platform can be moved horizontally, or the movable platform can also be moved horizontally. , And move up and down.

In addition, the modified example is an example in which the movable platform is composed of four blocks, but it may be less than four or more than five blocks.

In addition, seven rectangular blocks can be arranged in parallel to form blocks 102a to 102d. One block in the center constitutes the inner block 102d, and the three blocks on both sides constitute the middle block. 102a to 102c, the two outermost blocks constitute the outer block 102a. In this case, the chuck 22 is rectangular in the same shape as the embodiment, and the lower side of the long rectangular shape is formed in a downwardly convex curve. The suction surface 22a of the chuck 22 for adsorbing the die D can also form the outer side of the cylinder. Convex curved surface like surface (R-shaped surface).

In addition, the embodiment is an example of using a die attach film, but it can also be provided in a preform part where the substrate is coated with an adhesive instead of using the die attach film.

In addition, the embodiment describes a die bonder that uses a pickup head to pick up die from the die supply part and place it on the intermediate platform, and uses a bonding head to bond the die placed on the intermediate platform to the substrate, but it is not Limited to this, it can be applied to a semiconductor manufacturing apparatus that picks up a die from a die supply part. For example, a die bonder that does not have an intermediate platform and a pick-up head, and uses a bonding head to bond the die of the die supply part to the substrate is also applicable.

8: Control Department 10: Chip bonding machine (bonding device) 13: Stripping unit 132: Fixed platform 133: movable platform 16: cutting tape 22: Chuck D: Die

[Fig. 1] is a conceptual diagram of the die bonder of the embodiment viewed from above. [Fig. 2] A diagram for explaining the operation of the pickup head and the bonding head of Fig. 1. [Fig. [Fig. 3] Fig. 3 is a diagram showing an external perspective view of the crystal grain supply part of Fig. 1. [Fig. 4] is a schematic cross-sectional view showing the main part of the crystal grain supply part of Fig. 1. [Fig. [Fig. 5] is a diagram illustrating the peeling unit of Fig. 4. [Fig. [Fig. 6] is a diagram illustrating the configuration and operation of the peeling unit in Fig. 4. [Fig. 7] is a diagram illustrating the chuck of Fig. 2. [Fig. 8] is a flowchart showing a method of manufacturing a semiconductor device using the die bonder of Fig. 1. [Fig. [Fig. 9] is a top view of the peeling unit of the first modification. Fig. 10 is a diagram illustrating the configuration and operation of the peeling unit in Fig. 9. [Fig. 11] is a diagram illustrating the configuration and operation of the peeling unit in Fig. 9. [Fig. 12] is a diagram illustrating the chuck of Fig. 11. [Fig.

16: cutting tape

22: Chuck

131: Frame

132a: Groove

132b: convex

132c: Inclined surface

132f: side

132g: guide surface

133: movable platform

141: Attraction

D: Die

Claims (20)

A crystal bonding device, which is characterized by: A chuck, which absorbs the die held on the dicing tape; and The peeling unit is provided with: a movable platform that abuts against the dicing tape located below the die, and a fixed platform that absorbs the dicing tape located at the outer periphery of the die. The dicing tape peels off the aforementioned die, The movable platform has a concave portion for bending the crystal grain into a depression on the upper surface, The lower surface of the chuck has a curved surface fitted with the upper surface of the curved die. The die bonding device of claim 1, wherein the peeling unit further has a mechanism for deforming the die through the dicing tape by adsorbing the dicing tape. The die bonding device of claim 1, wherein the thickness of the crystal grain is 30 μm or less, and the height from the bottom of the curved valley of the crystal grain to the end of the crystal grain is more than 0 μm and 20 μm or less. Such as the die bonding device of claim 1, wherein the movable platform is slidable in a first horizontal direction with respect to the fixed platform, In a cross-sectional view of a surface orthogonal to the first direction, the lower surface of the chuck forms a downwardly convex curve, and the upper surface of the movable platform forms an upwardly concave curve. The die bonding device of claim 4, wherein, in a cross-sectional view of a plane orthogonal to a second direction orthogonal to the horizontal direction in the first direction, the lower surface of the chuck is linear, and the upper surface of the movable platform It is linear. Such as the die bonding device of claim 1, wherein it is further provided with a control unit that controls the aforementioned peeling unit, The aforementioned movable platform is composed of a plurality of ring-shaped blocks that can move up and down, The control unit is configured to control the plurality of blocks to form the recesses so that the height of the plurality of blocks gradually decreases from the outer block of the plurality of blocks to the inner block. The die bonding device of claim 6, wherein, in a cross-sectional view of a plane orthogonal to the first direction of the horizontal direction, the lower surface of the chuck forms a downwardly convex curve, and is perpendicular to the first direction in the first direction. In the cross-sectional view of the surface orthogonal to the second horizontal direction, the lower surface of the chuck forms a downwardly convex curve. A peeling unit, which is characterized by: Movable platform, which is in contact with the dicing tape below the die; and The fixed platform, which absorbs the dicing tape located on the outer periphery than the die, The movable platform has a concave portion for bending the crystal grain into a depression on the upper surface, and can slide in the first direction of the horizontal direction with respect to the fixed platform, In a cross-sectional view of a surface orthogonal to the first direction, the upper surface of the movable platform forms an upwardly concave curve. A chuck for use with a peeling unit. The peeling unit is provided with a movable platform that abuts on a portion of the dicing tape below the die, and absorbs the dicing tape that is located below the die. The fixed platform at the outer periphery, the movable platform has a concave portion for bending the crystal grain into a depression on the upper surface, and is characterized by: The lower surface of the chuck has a curved surface fitted with the upper surface of the curved die, The curved die held on the dicing tape is adsorbed. Such as the chuck of claim 9, wherein the movable platform is slidable in the first direction of the horizontal direction with respect to the fixed platform, In the cross-sectional view of the surface orthogonal to the first direction, the lower surface of the chuck forms a downwardly convex curve. A method of manufacturing a semiconductor device, which is characterized by: Wafer loading process, which is to transfer the wafer ring holding the dicing tape to the die bonding device; The die bonding device is equipped with: Chuck, which absorbs the crystal grains held on the dicing tape; The peeling unit is provided with: a movable platform that abuts against the dicing tape located below the die, and a fixed platform that absorbs the dicing tape located at the outer periphery of the die. Dicing tape to peel off the aforementioned die; and The control part, which controls the aforementioned peeling unit, The movable platform has a concave portion for bending the crystal grain into a depression on the upper surface, The lower surface of the chuck has a curved surface that fits with the upper surface of the curved die, A picking process, which uses the peeling unit and the chuck to peel the die from the dicing tape and pick it up; and The bonding process involves placing the die picked up from the aforementioned dicing tape on the substrate. According to claim 11, the method of manufacturing a semiconductor device, wherein the aforementioned picking process includes: The step of absorbing the dicing tape by the peeling unit, and deforming the die through the dicing tape; The step of adsorbing the aforementioned die by the aforementioned chuck; and The step of sliding the movable platform in the first direction of the horizontal direction with respect to the fixed platform. The method for manufacturing a semiconductor device according to claim 11, wherein the movable platform is composed of a plurality of ring-shaped blocks movable in the up and down direction, The aforementioned picking project has: The step of slowly lowering the height from the outer block of the plurality of blocks to the inner block to form the aforementioned recess; The step of absorbing the dicing tape by the peeling unit, and deforming the die through the dicing tape; The step of adsorbing the aforementioned die by the aforementioned chuck; and The steps of moving the aforementioned plural blocks one by one in the up and down direction. The method for manufacturing a semiconductor device according to claim 11, wherein the thickness of the crystal grains is 30 μm or less, and the height from the bottom of the bent valley of the crystal grains to the ends of the crystal grains is more than 0 μm and 20 μm or less. The method of manufacturing a semiconductor device according to claim 12, wherein, in a cross-sectional view of a surface orthogonal to the first direction, the lower surface of the chuck forms a downwardly convex curve, and the upper surface of the movable platform forms an upwardly concave Curve. The method of manufacturing a semiconductor device according to claim 15, wherein, in a cross-sectional view in a direction along the first direction, the lower surface of the chuck is linear, and the upper surface of the movable platform is linear. The method for manufacturing a semiconductor device according to claim 13, wherein, in a cross-sectional view in a first direction in the horizontal direction, the lower surface of the chuck forms a downwardly convex curve, and the first direction is perpendicular to the first direction in the horizontal direction. In a cross-sectional view in two directions, the lower surface of the chuck forms a downwardly convex curve. The method of manufacturing a semiconductor device according to claim 11, wherein the die system further includes a die attach film between the die and the dicing tape. The method for manufacturing a semiconductor device according to claim 11, wherein the bonding process includes a process of placing the die on the die that has already been bonded. The method for manufacturing a semiconductor device according to claim 19, wherein the aforementioned picking engineering system further has a step of placing the aforementioned picked-up die on an intermediate platform, The aforementioned bonding process further has a step of picking up the aforementioned die from the aforementioned intermediate platform.

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