JP5431533B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing technique, and more particularly to a technique effective when applied to the manufacture of an insulated gate field effect transistor formed in a semiconductor thin film on an insulating film.

  Japanese Unexamined Patent Publication No. 2003-203964 (Patent Document 1 (corresponding European Patent Publication EP1321966)), Japanese Unexamined Patent Publication No. 2004-22995 (Patent Document 2) and Japanese Unexamined Patent Publication No. 2005-150311 (Patent Document 3). In the die bonding process of a semiconductor chip (hereinafter simply referred to as a chip) having a DAF (Die Attach Film) attached to the back surface, a technique for suppressing the generation of bubbles at the interface between the chip and the die pad is disclosed. That is, die bonding is performed in a state where the chip is curved and deformed into a convex shape by an adsorbing part (pressurizing part) made of an elastic material, so that bubbles are not caught in the interface between the chip and the die pad.

  In Japanese Patent Laid-Open No. 2005-322815 (Patent Document 4), die deformation is performed by changing the tip into a convex shape by elastically deforming the collet and then setting the vacuum in the vacuum hole of the collet to atmospheric pressure. A technique for suppressing the occurrence of voids at the interface between the chip and the die pad is disclosed.

  In JP-A-2002-280398 (Patent Document 5) and JP-A-2004-6599 (Patent Document 6), when a film for thermocompression bonding is attached to a die pad (die bonding region) by a film adsorption collet. A technique for preventing the occurrence of voids at the interface between the film for thermocompression bonding and the die pad is disclosed by adsorbing the film for thermocompression bonding to the convex surface of the film adsorbing collet and transporting it to the die pad for pressure bonding. .

  In Japanese Patent Application Laid-Open No. 2004-128339 (Patent Document 7), a chip is formed by a collet in which a plurality of suction holes are provided in a suction part that sucks a chip, or a collet in which the entire surface of the suction part is formed of a porous material. A technique for reducing chip cracks and pressure bonding defects by suction, holding, and die bonding is disclosed.

  In Japanese Patent Laid-Open No. 2005-93838 (Patent Document 8 (corresponding US Application No. 10 / 901,999; US Application Date 2004.7.30)), die bonding is performed using a first heating stage and a second heating stage. Disclosed is a technique for shortening the bonding time by performing temporary bonding in a short time on the first heating stage and performing main bonding of a plurality of chips in a batch on the second heating stage separately from the heating stage. Yes.

  In Japanese Patent Application Laid-Open No. 2004-304066 (Patent Document 9 (corresponding US Application No. 10 / 812,869; US Application Date 2004.3.31)), it is divided from a semiconductor wafer (hereinafter simply referred to as a wafer). By touching the back of the adhesive tape with a plurality of chips attached to the head of the vibrator and applying longitudinal vibration with a predetermined frequency and amplitude, the chip can be quickly removed from the adhesive tape without cracking or chipping. A technique for peeling is disclosed.

  Japanese Patent Application Laid-Open No. 2004-228255 (Patent Document 10) discloses a die pickup that enables stable pickup by increasing the push-up amount of the push-up pin by one pitch or by controlling the push-up speed to be slow. An apparatus is disclosed.

  In Japanese Patent Laid-Open No. 2006-24729 (Patent Document 11), in a dispenser used in a die bonding step, a flattened surface in which a diameter in a width direction of an opening of a nozzle that discharges a paste is larger than a diameter in a direction perpendicular thereto. A technique for speeding up the application operation of the die bonding paste and preventing the occurrence of voids between the die bonding paste and the chip is disclosed.

  In Japanese Patent Application Laid-Open No. 2005-1117019 (Patent Document 12 (corresponding US Application No. 10 / 942,889; US Application Date 2004.9.917)), a chip attached to a dicing tape is peeled off. A technique is disclosed in which a plurality of blocks that push the dicing tape upward are formed, and the chip is quickly peeled off from the dicing tape without cracking or chipping. That is, in the plurality of blocks, a second block having a smaller diameter is arranged inside the first block having the largest diameter, and a third block having the smallest diameter is arranged inside the second block. It is.

JP 2003-203964 A Japanese Patent Laid-Open No. 2004-22959 Japanese Patent Application Laid-Open No. 2005-150311 JP 2005-322815 A JP 2002-280398 A JP 2004-6599 A JP 2004-128339 A JP 2005-93838 A JP 2004-304066 A JP 2004-228255 A JP 2006-24729 A JP 2005-1117019 A

  In recent years, packages for stacking and mounting a plurality of chips on a wiring board have been put into practical use for the purpose of high-density mounting of semiconductor devices. When assembling such a package, a chip processed to a thickness of about several tens of μm is used.

  In order to mount such a thin chip on a wiring board, first, a tape for protecting the integrated circuit is applied to the main surface of the wafer on which a desired integrated circuit is formed, and in this state, the back surface of the wafer is polished and polished. By etching, the thickness is reduced to about several tens of μm. Subsequently, dicing is performed with the adhesive tape attached to the back surface of the thin wafer to divide the wafer into a plurality of chips. Thereafter, a push-up pin or the like is pressed against the back surface of the adhesive tape to peel off the chips one by one from the adhesive tape, and the peeled chips are picked up by a collet and conveyed onto a wiring board for pelletization. Further, the chip is die-bonded by thermocompression bonding via an adhesive film.

  By the way, in the assembly process of the package using the extremely thin chip as described above, when the chip is picked up by the collet, the chip is picked up in a deformed state by the attracting force of the collet. If die bonding is performed in this state, the chip is die-bonded while being deformed, and voids (bubbles) are formed at the interface between the chip and the die pad on the wiring board or between the two stacked chips. Arise. After the die bonding process, a process involving a high temperature such as a wire bonding process and a molding process is subsequently performed, so that the void may expand and burst, resulting in a problem that the chip is damaged. Therefore, there is a problem that die bonding must be performed while suppressing deformation of the chip.

  Further, when a very thin chip divided by dicing is peeled off and picked up from the adhesive tape, the chip is likely to be cracked or chipped, so that care must be taken to prevent this. If chip pick-up fails when the chips are peeled off from the adhesive tape one by one, means to pick up again under the condition that the stroke amount of the push-up pin or the like is increased or the push-up speed is slow, or the amount of the adhesive tape expand It is conceivable to cope with this by adjusting (increasing). However, there is a case where the pick-up fails again with the means for picking up again under the condition that the stroke amount of the push-up pin or the like is increased or the push-up speed is slowed down. At the time of pick-up, the push-up jig including the push-up pin is pushed up with the back surface of the adhesive tape adsorbed. However, if the means for adjusting the expanded amount of the adhesive tape is used, the tension of the adhesive tape becomes too strong. In some cases, the push-up jig cannot be sucked, and in this case, the chip cannot be peeled off from the adhesive tape.

  In addition, when peeling the chip from the adhesive tape, the head of the vibrator is brought into contact with the back of the adhesive tape, and longitudinal vibration with a predetermined frequency and amplitude is applied, so that the chip is peeled off from the adhesive tape without causing cracks or chipping. There is a means to do. However, since the adhesive strength between the chip and the adhesive tape differs depending on the size of the chip, it may be necessary to change the frequency and amplitude of vibration, and the chip cannot be quickly removed from the adhesive tape. Create a challenge. In addition, in the case where pickup has failed in the state where peeling has progressed halfway, if it is attempted to pick up the chip that has been peeled off halfway, it is highly likely that the chip on the adhesive tape can be easily peeled off. If the vibration is excessively applied, the pickup position accuracy may decrease.

  Moreover, when peeling off a DAF type | mold chip | tip from an adhesive tape by vibration, the present inventors peeled off slowly as the area | region near the outer periphery of the adhesive surface of a chip | tip and an adhesive tape, and the area | region closer to the center peeled. We found that progress was fast. Therefore, it is necessary to apply vibration in accordance with the progress of peeling in a region near the outer periphery of the adhesive surface where the progress of peeling is slow. However, when the chip is peeled off by such excitation, heat generated by vibration is applied to the chip, and heat is applied in a region closer to the center than the adhesive surface where peeling is completed. It may adhere and become impossible to peel.

  One object disclosed by the present invention is to provide a technique capable of die bonding without causing voids on the bonding surface.

  Another object disclosed in the present invention is to provide a technique capable of reliably and accurately peeling a chip from an adhesive tape holding the chip during die bonding.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

1. A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) By adsorbing and holding the upper surface of the first semiconductor chip to be peeled from the adhesive tape among the plurality of semiconductor chips held by the adhesive tape with a first suction force by an adsorption collet Removing the first semiconductor chip from the adhesive tape;
(D) After the step (c), the upper surface of the first semiconductor chip is sucked and held by the suction collet with a second suction force smaller than the first suction force, and the first semiconductor chip The process of die-bonding the underside of the chip to the chip mounting area.

Here, the first suction force is an adsorption force capable of peeling the first semiconductor chip from the adhesive tape,
The second suction force is a suction force that is smaller than the first suction force and does not cause the first semiconductor chip to fall from the suction collet.

2. A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) By adsorbing and holding the upper surface of the first semiconductor chip to be peeled from the adhesive tape among the plurality of semiconductor chips held by the adhesive tape with an adsorption collet, the first semiconductor A step of peeling the chip from the adhesive tape;
(D) a step of disposing a mounting substrate on a first bonding stage provided with a pressing jig;
(E) After the step (c) and the step (d), the semiconductor chip is mounted on the main surface of the mounting substrate while the upper surface of the first semiconductor chip is sucked and held by the suction collet. A step of adhering the temporary adhesion region to the chip mounting region while being pressed from the back surface of the mounting substrate to the temporary adhesion region at the center of the lower surface of the first semiconductor chip by the pressure jig.
(F) After the step (e), pressure is applied to the entire bottom surface of the first semiconductor chip from the back surface of the mounting substrate to bond the bottom surface of the first semiconductor chip to the chip mounting region. Process.

3. A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) By adsorbing and holding the upper surface of the first semiconductor chip to be peeled from the adhesive tape among the plurality of semiconductor chips held by the adhesive tape with an adsorption collet, the first semiconductor A step of peeling the chip from the adhesive tape;
(D) After the step (c), a step of die bonding the lower surface of the first semiconductor chip to the chip mounting region while adsorbing and holding the upper surface of the first semiconductor chip with the adsorption collet.

Here, the suction collet has a head part in contact with the first semiconductor chip, and a receiving part for holding the head part,
The receiving portion has a first surface that is spherically processed at a receiving seat portion that contacts the head portion,
The head portion is spherically processed so that the second surface in contact with the receiving seat portion matches the first surface of the receiving seat portion,
The receiving portion holds the head portion so that the lower surface of the first semiconductor chip is parallel to the chip mounting region.

4). A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) By adsorbing and holding the upper surface of the first semiconductor chip to be peeled from the adhesive tape among the plurality of semiconductor chips held by the adhesive tape with an adsorption collet, the first semiconductor A step of peeling the chip from the adhesive tape;
(D) After the step (c), a step of die bonding the lower surface of the first semiconductor chip to the chip mounting region while adsorbing and holding the upper surface of the first semiconductor chip with the adsorption collet.

Here, the suction collet has a head part in contact with the first semiconductor chip, a first receiving part for holding the head part, and a second receiving part for holding the first receiving part. And
The first receiving portion is subjected to curved processing with a first curvature along the first direction in the first receiving seat portion in contact with the head portion,
The head portion has a second surface in contact with the first receiving seat portion that is curved to match the first surface of the first receiving seat portion,
The second receiving portion has a second curvature curved surface process along a second direction in which a third surface intersects the first direction in a second receiving seat portion in contact with the first receiving portion. Is given,
The first receiving portion and the second receiving portion hold the head portion and the first receiving portion, respectively, such that the lower surface of the first semiconductor chip is parallel to the chip mounting region.

5. A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) A first target to be peeled from the adhesive tape among the plurality of semiconductor chips while applying a first horizontal tension to the adhesive surface of the adhesive tape to which the plurality of semiconductor chips are attached. A step of peeling the first semiconductor chip from the pressure-sensitive adhesive tape by pushing the semiconductor chip from the back surface of the pressure-sensitive adhesive tape with a push-up jig and sucking and holding the upper surface of the first semiconductor chip with a suction collet;
(D) When peeling of the first semiconductor chip from the adhesive tape in the step (c) fails, the above-mentioned ((1) is again performed under the condition that at least one of the push-up amount and push-up speed of the push-up jig is changed. c) performing the process;
(E) a step of performing the step (c) again under a condition in which the first tension is reduced when the first semiconductor chip has failed to be peeled from the adhesive tape in the step (d).
(F) After the first semiconductor chip is peeled from the adhesive tape, the lower surface of the first semiconductor chip is attached to the chip mounting region while the upper surface of the first semiconductor chip is sucked and held by the suction collet. Die bonding process.

6). A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) A first target to be peeled from the adhesive tape among the plurality of semiconductor chips while applying a first horizontal tension to the adhesive surface of the adhesive tape to which the plurality of semiconductor chips are attached. The semiconductor chip is pushed up from the back surface of the adhesive tape by a pushing jig while applying a vertical vibration of the first amplitude, and the upper surface of the first semiconductor chip is sucked and held by a suction collet, whereby the first semiconductor A step of peeling the chip from the adhesive tape;
(D) The step of performing the step (c) again under a condition in which the first amplitude is reduced when the first semiconductor chip has failed to be peeled from the adhesive tape in the step (c).
(E) a step of performing the step (c) again under a condition in which the first tension is reduced when the first semiconductor chip has failed to be peeled from the adhesive tape in the step (d).
(F) After the first semiconductor chip is peeled from the adhesive tape, the lower surface of the first semiconductor chip is attached to the chip mounting region while the upper surface of the first semiconductor chip is sucked and held by the suction collet. Die bonding process.

7). A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) A first target to be peeled from the adhesive tape among the plurality of semiconductor chips while applying a first horizontal tension to the adhesive surface of the adhesive tape to which the plurality of semiconductor chips are attached. The semiconductor chip is pushed up from the back surface of the adhesive tape by a pushing jig while applying a vertical vibration of the first amplitude, and the upper surface of the first semiconductor chip is sucked and held by a suction collet, whereby the first semiconductor A step of peeling the chip from the adhesive tape;
(D) After the first semiconductor chip is peeled from the adhesive tape, the lower surface of the first semiconductor chip is attached to the chip mounting region while the upper surface of the first semiconductor chip is sucked and held by the suction collet. Die bonding process.

  Here, the push-up jig is provided with a gap at a position facing the center of the lower surface of the first semiconductor chip.

8). A method for manufacturing a semiconductor device according to the present invention includes the following steps:
(A) a step of preparing a semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, and an adhesive tape is attached to the back surface;
(B) cutting the semiconductor wafer along the divided region and dividing it into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) The process of preparing the accommodation jig | tool provided with the opening part which accommodates one or more mounting substrates, and can take in and out the said mounting substrate,
(D) The housing jig is arranged at a dimension measurement position, a first width of the housing jig in a third direction horizontal to the opening is measured, and a first value between a reference value and the first width is measured. A step of obtaining a difference of 1;
(E) correcting the movement distance in the third direction by the first difference and moving the housing jig to the mounting board removal position;
(F) After the step (e), the one mounting board is taken out from the housing jig, and extends in a fourth direction that faces the opening of the housing jig and is orthogonal to the third direction. A process of transporting to a chip mounting position along a transporting track,
(G) Of the plurality of semiconductor chips held by the adhesive tape, the upper surface of the first semiconductor chip to be peeled off from the adhesive tape is adsorbed and held by an adsorption collet, whereby the first semiconductor A step of peeling the chip from the adhesive tape;
(H) After the step (g), the mounting substrate in which the lower surface of the first semiconductor chip is disposed at the chip mounting position while the upper surface of the first semiconductor chip is sucked and held by the suction collet. The process of die bonding to the chip mounting area.

Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.
(1) When a semiconductor chip is mounted on a mounting area such as a wiring board, the semiconductor chip is mounted while eliminating the warp and inclination of the semiconductor chip, thereby preventing a void from being generated between the semiconductor chip and the mounting area. be able to. As a result, the semiconductor chip can be prevented from being peeled off from the mounting region, and can be reliably mounted.
(2) Conditions for picking up the adhesive tape by the push-up jig and conditions for stretching the adhesive tape when a pick-up error occurs when picking up the semiconductor chip held on the adhesive tape such as dicing tape from the adhesive tape Since the retry operation is performed with the change, the semiconductor chip to be peeled can be easily peeled from the adhesive tape.
(3) Since the magazine containing one or more wiring boards is transferred to the wiring board take-out position in consideration of dimensional variations, the wiring board is prevented from being damaged when the wiring board is taken out from the magazine. Can do.

It is a perspective view of the semiconductor chip used for manufacture of the semiconductor device which is Embodiment 1 of this invention. It is a side view which shows the grinding process of a semiconductor wafer. It is a side view which shows the process of affixing a dicing tape on a semiconductor wafer. It is a side view which shows the dicing process of a semiconductor wafer. It is a top view which shows the state which fixed the semiconductor wafer and the dicing tape to the wafer ring, and has arrange | positioned the pressing plate above it and arrange | positioned the expand ring below. It is sectional drawing which shows the state which fixed the semiconductor wafer and the dicing tape to the wafer ring, has arrange | positioned the press plate above it, and has arrange | positioned the expand ring below. It is sectional drawing which shows the state which gave the tension | tensile_strength of the dicing tape by pinching | interposing a dicing tape and a wafer ring with a pressing plate and an expand ring. It is principal part sectional drawing of the chip | tip peeling apparatus explaining the peeling method of the semiconductor chip which affixed the dicing tape. It is sectional drawing which shows the adsorption | suction piece of a chip | tip peeling apparatus. It is an expanded sectional view near the upper surface of a suction piece. It is an expansion perspective view of the upper surface vicinity of an adsorption | suction piece. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expansion perspective view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is sectional drawing of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expansion perspective view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is sectional drawing of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expansion perspective view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is sectional drawing of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of a semiconductor chip. It is principal part sectional drawing explaining the curvature of the semiconductor chip adsorbed by the adsorption collet. It is a top view which shows the adsorption | suction surface of the adsorption collet shown in FIG. It is principal part sectional drawing explaining the curvature of the semiconductor chip adsorbed by the adsorption collet. It is a top view which shows the adsorption | suction surface of the adsorption collet shown in FIG. It is principal part sectional drawing explaining the void formed between the semiconductor chip and the wiring board. It is explanatory drawing which shows an example of the vacuum supply line which supplies decompression force to an adsorption | suction collet. It is explanatory drawing which shows an example of the vacuum supply line which supplies decompression force to an adsorption | suction collet. It is sectional drawing of the wiring board which shows the pelletizing process of a semiconductor chip. It is sectional drawing of the wiring board which shows the lamination | stacking of a semiconductor chip, and a wire bonding process. It is sectional drawing of the wiring board which shows the resin sealing process of a semiconductor chip. It is explanatory drawing which shows an example of the vacuum supply line which supplies decompression force to the adsorption collet used for manufacture of the semiconductor device which is Embodiment 2 of this invention. It is a principal part perspective view of the bonding stage used at the temporary crimping | compression-bonding process of the semiconductor chip in the manufacturing process of the semiconductor device which is Embodiment 3 of this invention. FIG. 36 is a main part perspective view showing a state in which a wiring board and a semiconductor chip are arranged on the bonding stage shown in FIG. 35; FIG. 36 is an enlarged plan view showing a chip disposed on the bonding stage shown in FIG. 35. FIG. 36 is an essential part cross-sectional view showing, in an enlarged manner, a vicinity of a protrusion provided in the bonding stage in a state where a wiring board and a chip are arranged on the bonding stage shown in FIG. 35. It is principal part sectional drawing explaining the structure of the adsorption collet used for manufacture of the semiconductor device which is Embodiment 4 of this invention. It is principal part sectional drawing explaining the structure of the adsorption collet used for manufacture of the semiconductor device which is Embodiment 4 of this invention. It is a top view explaining the structure of the adsorption collet used for manufacture of the semiconductor device which is Embodiment 5 of this invention. It is principal part sectional drawing explaining the structure of the adsorption | suction collet used for manufacture of the semiconductor device which is Embodiment 5 of this invention. It is principal part sectional drawing explaining the structure of the adsorption | suction collet used for manufacture of the semiconductor device which is Embodiment 5 of this invention. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of the semiconductor chip at the time of using a push-up pin. It is an expanded sectional view of the upper surface vicinity of the adsorption | suction piece explaining the peeling method of the semiconductor chip at the time of using the horn which emits an ultrasonic wave. 14 is a flowchart showing a method for coping with a chip pickup error from a dicing tape in the manufacturing process of a semiconductor device according to a sixth embodiment of the present invention. FIG. 16 is a main part flowchart showing a coping method when a chip pick-up mistake from a dicing tape occurs in a semiconductor device manufacturing process according to a seventh embodiment of the present invention; It is principal part sectional drawing of the horn used for manufacture of the semiconductor device which is Embodiment 8 of this invention. It is a top view which shows the front-end | tip part of the horn shown in FIG. It is the top view which compared the magnitude | size of the front-end | tip part of the horn shown to FIG. 48 and FIG. 49, and the chip | tip of peeling object. It is principal part sectional drawing of the horn used for manufacture of the semiconductor device which is Embodiment 9 of this invention. It is a top view which shows the front-end | tip part of the horn shown in FIG. FIG. 53 is a plan view comparing the sizes of the tip of the horn shown in FIGS. 51 and 52 and the chip to be peeled off. It is a top view of the dimension measuring jig of the magazine used for manufacture of the semiconductor device which is Embodiment 10 of this invention. It is a side view of the dimension measuring jig of the magazine used for manufacture of the semiconductor device which is Embodiment 10 of this invention. It is a side view of the magazine used for manufacture of the semiconductor device which is Embodiment 10 of this invention. FIG. 15 is a flowchart showing a process from measuring a dimension of a magazine used for manufacturing a semiconductor device according to a tenth embodiment of the present invention to moving the magazine to a wiring board take-out position in consideration of a variation in the dimension of the magazine. is there. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a top view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 58 is a side view of a magazine dimension measuring jig for explaining details of steps in the flowchart shown in FIG. 57. FIG. 15 is a flowchart showing a process from measuring a dimension of a magazine used for manufacturing a semiconductor device according to an eleventh embodiment of the present invention to moving the magazine to a wiring board take-out position in consideration of a variation in the dimension of the magazine. is there.

  Before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  A wafer is a single crystal silicon substrate (generally a substantially planar circular shape), SOI (Silicon On Insulator) substrate, epitaxial substrate, sapphire substrate, glass substrate, other insulation, anti-insulation or semiconductor used in the manufacture of semiconductor elements or integrated circuits. A board | substrate etc. and those composite board | substrates are said. In addition, the term “semiconductor device” as used herein refers not only to a semiconductor device such as a silicon wafer or a sapphire substrate or an insulator substrate, but particularly to a TFT (Thin Film Transistor) and unless otherwise specified. It also includes those made on other insulating substrates such as glass such as STN (Super-Twisted-Nematic) liquid crystal.

  The device surface or element formation surface is a main surface of a wafer on which a device pattern corresponding to a plurality of chip regions is formed by lithography.

  The collet is a suction holder used to transfer chips one by one after dividing the wafer into individual chips by dicing or the like.

  Chip push-up means that when a wafer is divided into individual chips and then separated and adsorbed and transferred, the chip is moved from the back surface to the needle-like pins through the adhesive tape attached to the back surface of the wafer. It means pushing up.

  The magazine refers to a container for supplying and storing a mounting substrate on which chips are mounted, and is mounted on a loader and an unloader of an apparatus in which each process such as die bonding, wire bonding, and resin sealing is performed.

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. In addition, when referring to the constituent elements in the embodiments, etc., “consisting of A” and “consisting of A” do not exclude other elements unless specifically stated that only the elements are included. Needless to say.

  Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  In addition, when referring to materials, etc., unless specified otherwise, or in principle or not in principle, the specified material is the main material, and includes secondary elements, additives It does not exclude additional elements. For example, unless otherwise specified, the silicon member includes not only pure silicon but also an additive impurity, a binary or ternary alloy (for example, SiGe) having silicon as a main element.

  In addition, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

  In the drawings used in the present embodiment, even a plan view may be partially hatched to make the drawings easy to see.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
The first embodiment is applied to the manufacture of a semiconductor package in which a chip is mounted on a wiring board, and the manufacturing method will be described in the order of steps with reference to FIGS.

  First, after forming an integrated circuit on the main surface of a wafer 1W made of single crystal silicon as shown in FIG. 1, a plurality of chip formation regions (chip regions) 1CA partitioned by lattice-like scribe lines (divided regions) are formed. An electrical test is performed on each integrated circuit formed to determine whether it is good or bad. Chip formation region 1CA of wafer 1W used in the first embodiment has, for example, a square planar shape having the same vertical and horizontal lengths.

  Next, as shown in FIG. 2, a back grind tape 3 for protecting the integrated circuit is attached to the integrated circuit forming surface (the lower surface in the drawing) of the wafer 1W. Then, in this state, the back surface (upper surface side in the figure) of the wafer 1W is ground with a grinder, and subsequently, the damaged layer on the back surface caused by this grinding is removed by a method such as wet etching, dry polishing, plasma etching or the like. Thus, the thickness of the wafer 1W is reduced to 100 μm or less, for example, about 50 μm to 90 μm. The processing methods such as wet etching, dry polishing, and plasma etching are slower in processing speed in the wafer thickness direction than grinding speed by the grinder, but the damage to the wafer is compared with grinding by the grinder. In addition, the damage layer inside the wafer generated by grinding by the grinder can be removed, and there is an effect that the wafer 1W and the chip are hardly broken.

  Next, after the back grind tape 3 is removed, as shown in FIG. 3, the DAF (adhesive for mounting the chip on the wiring substrate on the back surface of the wafer 1W (the surface opposite to the integrated circuit formation surface) ( A dicing tape (adhesive tape) 4 is affixed on the DAF, and the peripheral portion of the dicing tape 4 is fixed to the wafer ring 5 in this state. In many cases, a method in which the wafer 1W is attached to the dicing tape 4 to which the DAF has been attached in advance is used. The dicing tape 4 was cut into a circular shape having a tackiness by applying an adhesive to the surface of a tape substrate made of polyolefin (PO), polyvinyl chloride (PVC), polyethylene terephthalate (PET), or the like. In many cases, UV curable adhesives are used.

  Next, as shown in FIG. 4, the wafer 1W is diced by using a dicing blade 6 to divide each of the plurality of chip formation regions 1CA into square chips 1C. At this time, since it is necessary to leave the divided chips 1C on the circular dicing tape 4, the dicing tape 4 is cut by only several tens of μm in the thickness direction. When a UV curable adhesive tape is used as the dicing tape 4, the dicing tape 4 is irradiated with ultraviolet rays prior to the chip 1C peeling process described below to reduce the adhesive strength of the adhesive.

  Next, as shown in FIG. 5 (plan view) and FIG. 6 (cross-sectional view), the pressing plate 7 is disposed above the dicing tape 4 fixed to the wafer ring 5, and the expanding ring 8 is disposed below. Then, as shown in FIG. 7, the pressing plate 7 is pressed against the upper surface of the wafer ring 5, and at the same time, the peripheral portion of the back surface of the dicing tape 4 is pushed upward by the expanding ring 8. If it does in this way, since the dicing tape 4 (adhesive surface) receives the strong tension | tensile_strength (1st tension | tensile_strength) which goes to the periphery from the center part, it is extended without slack in the horizontal direction.

  Next, in this state, the expand ring 8 is positioned on the stage 101 of the chip peeling apparatus 100 shown in FIG. 8 and held horizontally. At the center of the stage 101, a suction piece 102 that is moved horizontally and vertically by a drive mechanism (not shown) is disposed. The dicing tape 4 is held such that the back surface thereof faces the upper surface of the suction piece 102.

  9 is a cross-sectional view of the suction piece 102, FIG. 10 is an enlarged cross-sectional view of the vicinity of the upper surface of the suction piece 102, and FIG. 11 is an enlarged perspective view of the vicinity of the upper surface of the suction piece 102.

  A plurality of suction ports 103 and a plurality of grooves 104 formed concentrically are provided on the periphery of the upper surface of the suction piece 102. Many suction ports 103 may be arranged on the whole without providing the grooves 104. The inside of each of the suction port 103 and the groove 104 is depressurized with a suction force of −90 kPa to −60 kPa by a suction mechanism (not shown) when the suction piece 102 is raised and its upper surface is brought into contact with the back surface of the dicing tape 4. Is done. At this time, the back surface of the dicing tape 4 is sucked downward and comes into close contact with the upper surface of the suction piece 102.

  When the dicing tape 4 is sucked downward, if the groove 104 has a large width or depth, the dicing tape 4 below the chip 1C adjacent to the chip 1C to be peeled is sucked into the groove 104. The interface between the adjacent chip 1 </ b> C and the dicing tape 4 below the chip 1 </ b> C may peel off in the upper region of the groove 104. In particular, in the dicing tape 4 using an adhesive having a relatively weak adhesive force, such peeling is likely to occur. When such a phenomenon occurs, the adjacent chip 1C may fall off the dicing tape 4 during the operation of peeling the chip (first semiconductor chip) 1C to be peeled off from the dicing tape 4. Therefore, it is not preferable. Therefore, in order to prevent such a phenomenon from occurring, the width and depth of the groove 104 are made as small as possible, and a gap as much as possible is provided between the dicing tape 4 below the adjacent chip 1C and the upper surface of the suction piece 102. It is effective to prevent this from occurring.

A first block 110 </ b> A, a second block 110 </ b> B, and a third block 110 </ b> C that push up the dicing tape 4 upward are incorporated in the central portion of the suction piece 102. A second block 110B having a smaller diameter is disposed inside the first block 110A having the largest diameter, and a third block 110C having the smallest diameter is disposed further inside. As will be described later, the three first blocks 110A, the second block 110B, and the third block 110C are interposed between the outer first block 110A and the intermediate second block 110B. The second compression coil spring 111B, which is interposed between the second intermediate block 110B and the inner third block 110C and has a larger spring constant than the first compression coil spring 111A, And the third block 110C
And is moved up and down in conjunction with a pusher 112 that moves up and down by a drive mechanism (not shown).

  Of the three first blocks 110A, second block 110B, and third block 110C, the outermost first block 110A having the largest diameter is slightly more than the chip 1 to be peeled (for example, It is preferable to use one having a small diameter (about 0.5 mm to 3 mm). For example, when the chip 1C is a square, it is desirable to make it a square that is slightly smaller than that. In addition, when the chip 1C is rectangular, it is desirable that the chip 1C be a rectangle that is slightly smaller than that. As a result, the corner portion, which is the outer periphery of the upper surface of the first block 110A, is positioned slightly inside the outer edge of the chip 1C, so that the location that becomes the starting point when the chip 1C and the dicing tape 4 are peeled off It is possible to concentrate the force for separating both of them on the outermost peripheral portion of the chip 1C.

  In addition, the upper surface of the first block 110A is desirably a flat surface or a surface having a large local radius in order to secure a contact area with the dicing tape 4. When the contact area between the upper surface of the first block 110A and the dicing tape 4 is small, a large bending stress is concentrated on the periphery of the chip 1C supported from below by the upper surface of the first block 110A. There is a risk of cracking.

  The intermediate second block 110B disposed inside the first block 110A has a diameter that is smaller by about 1 mm to 3 mm than the first block 110A. In addition, the third block 110C having the smallest diameter disposed further inside than the second block 110B has a diameter that is further smaller by about 1 mm to 3 mm than the intermediate second block 110B. In the first embodiment, the shape of each of the intermediate second block 110B and the inner third block 110C is made cylindrical in consideration of the ease of processing, but the outer first block 110A. Similarly, it may be a quadrangular prism shape or a shape close thereto. The heights of the top surfaces of the three first blocks 110A, the second block 110B, and the third block 110C are in the initial state (the first block 110A, the second block 110B, and the third block 110C, respectively). In the non-operating state, they are equal to each other, and are also equal to the height of the periphery of the upper surface of the suction piece 102.

  As shown in an enlarged view in FIG. 10, between the periphery of the suction piece 102 and the outer first block 110A, and the three first blocks 110A, the second block 110B, and the third block 110C. A gap (S) is provided between them. The inside of these gaps (S) is depressurized by a suction mechanism (not shown). When the back surface of the dicing tape 4 comes into contact with the upper surface of the suction piece 102, the dicing tape 4 is sucked downward, and the first The block 110A, the second block 110B, and the third block 110C are in close contact with each other.

  In order to peel the chip 1C from the dicing tape 4 using the chip peeling apparatus 100 having the suction piece 102 as described above, first, as shown in FIG. The central portion (first block 110A, second block 110B, and third block 110C) of the suction piece 102 is moved directly below the chip 1C located in the center of the figure, and suctioned above the chip 1C. The collet 105 is moved. At the center of the bottom surface of the suction collet 105 supported by a moving mechanism (not shown), a suction port 106 whose inside is decompressed is provided, and only one chip 1C to be peeled is selectively selected. It can be adsorbed and held on.

  Next, as shown in FIG. 13, the suction piece 102 is raised and its upper surface is brought into contact with the back surface of the dicing tape 4, and the inside of the suction port 103, the groove 104 and the gap (S) described above is decompressed. As a result, the dicing tape 4 that is in contact with the chip 1C to be peeled adheres to the top surfaces of the first block 110A, the second block 110B, and the third block 110C. Further, the dicing tape 4 that is in contact with the other chip 1C adjacent to the chip 1C is in close contact with the periphery of the upper surface of the suction piece 102. At this time, if the suction piece 102 is pushed up slightly (for example, about 400 μm), further tension is applied to the dicing tape 4 to which the horizontal tension is applied by the pressing plate 7 and the expanding ring 8 described above. Therefore, the suction piece 102 and the dicing tape 4 can be more closely attached.

  Further, the suction collet 105 is lowered almost simultaneously with the raising of the suction piece 102, the bottom surface of the suction collet 105 is brought into contact with the upper surface of the chip 1C to be peeled, and the chip 1C is sucked with a suction force of about 80 kPa. Lightly press 1C downward. Thus, when the chip 1C is sucked upward using the suction collet 105 when the dicing tape 4 is sucked downward using the suction piece 102, the first block 110A, the second block 110B, and the third block are sucked. Separation of the dicing tape 4 and the chip 1C by pushing up 110C can be promoted.

  Next, as shown in FIG. 14, the three first blocks 110A, the second block 110B, and the third block 110C are pushed up simultaneously to apply an upward load to the back surface of the dicing tape 4, thereby forming the chip 1C. And the dicing tape 4 are pushed up. At this time, the back surface of the chip 1C is supported by the upper surfaces (contact surfaces) of the first block 110A, the second block 110B, and the third block 110C via the dicing tape 4, and bending stress applied to the chip 1C is applied. While reducing, the stress which peels to the interface used as the peeling start point of the chip | tip 1C and the dicing tape 4 by arrange | positioning the outer periphery (corner part) of the upper surface of 1st block 110A inside the outer periphery of the chip | tip 1C. The peripheral edge of the chip 1C is efficiently peeled from the dicing tape 4. At this time, the dicing tape 4 below the other chip 1C adjacent to the chip 1C to be peeled is sucked downward and brought into close contact with the periphery of the upper surface of the suction piece 102, so that the peripheral edge of the chip 1C The peeling of the dicing tape 4 can be promoted. FIG. 15 is an enlarged perspective view showing the vicinity of the upper surface of the suction piece 102 at this time (illustration of the chip 1C and the dicing tape 4 is omitted).

  The push-up amount (stroke) of the first block 110A, the second block 110B, and the third block 110C is, for example, about 0.4 mm, but the stroke may be changed depending on the angle required for peeling. Note that the adhesive applied to the dicing tape 4 has a difference in adhesive strength depending on the manufacturer and product type. Therefore, even when the size of the chip 1C is the same, when a pressure-sensitive adhesive having a large adhesive force is used, it is necessary to increase the push-up amount and ensure the peeling angle.

  Further, when the first block 110A, the second block 110B, and the third block 110C are pushed upward to apply a load to the back surface of the chip 1C, a direction orthogonal to the outer periphery of the chip is provided at the outermost peripheral portion of the chip 1C. It is desirable that the bending stress to be smaller than the bending stress in the direction parallel to the outer periphery of the chip. In the outermost peripheral portion of the chip 1C, fine cracks generated when the wafer 1W is diced using the dicing blade 6 described above remain. Therefore, when the first block 110A, the second block 110B, and the third block 110C are pushed upward, a strong bending stress is applied to the outermost peripheral portion of the chip 1C along the direction orthogonal to the outer periphery of the chip 1C. Then, cracks may grow and the chip 1C may break. In the first embodiment, the first block 110A having an upper surface that is slightly smaller than the size of the chip 1C is used to apply a uniform load slightly inward from the outermost peripheral portion of the chip 1C. The entire peripheral edge of the chip 1C can be evenly peeled from the dicing tape 4 while avoiding the above.

  To push up the three first blocks 110A, the second block 110B, and the third block 110C at the same time, the pusher 112 is pushed upward to connect it to the pusher 112, as shown in FIG. The inner third block 110C is pushed up. Accordingly, the intermediate second block 110B is pushed up by the spring force of the compression coil spring 111B interposed between the inner third block block 110C and the intermediate second block 110B, and the outer first block 110B is further pushed up. Since the outer first block 110A is pushed up by the spring force of the compression coil spring 111A interposed between the block 110A and the intermediate second block 110B, the three first blocks 110A and the second block 110B And the third block 110C is pushed up simultaneously. Then, a part of the outer first block 110A (the surface indicated by the arrow in the figure) comes into contact with the peripheral portion of the suction piece 102, whereby the first block 110A, the second block 110B, and the third block 110C. Stops rising. At this time, most of the region of the chip 1C to be peeled is supported by the upper surfaces of the three first blocks 110A, the second block 110B, and the third block 110C, and the first block 110A. In the region outside the outer periphery (corner portion) of the upper surface of the chip, peeling at the interface between the chip 1C and the dicing tape 4 efficiently proceeds.

  When the three first blocks 110A, the second block 110B, and the third block 110C are pushed upward simultaneously, the pusher 112 pushes the block 110C with a weak force such that the compression coil spring 111A having a weak spring force does not contract. Push up. In this way, after a part of the outer first block 110A comes into contact with the peripheral portion of the suction piece 102, the intermediate second block 110B and the inner third block 110C further protrude upward. Absent.

  Further, the compression coil spring 111 </ b> A needs to have a spring force that can lift the first block 110 </ b> A against at least the tension of the dicing tape 4. When the spring force of the compression coil spring 111A is smaller than the tension of the dicing tape 4, the outer first block 110A does not lift up even if the pusher 112 is pushed up, so the chip 1C is lifted by the upper surface of the outer first block 110A. It becomes impossible to support. In this case, since sufficient stress cannot be concentrated on the separation starting point between the chip 1C and the dicing tape 4, the separation speed is reduced or the chip 1C is cracked due to excessive bending stress applied to the chip 1. It can cause problems.

  Next, as shown in FIG. 17, the middle second block 110 </ b> B and the inner third block 110 </ b> C are simultaneously pushed upward to push up the dicing tape 4. As a result, the position of the outer periphery (corner) on the upper surface of the second block 110B that supports the chip 1C moves further inward compared to the state supported by the first block 110A. The peeling from the tape 4 proceeds from the region outside the outer periphery of the upper surface of the second block 110B toward the center of the chip 1C. FIG. 18 is an enlarged perspective view showing the vicinity of the upper surface of the suction piece 102 at this time (illustration of the chip 1C and the dicing tape 4 is omitted).

  In order to push up the two second blocks 110B and the inner third block 110C at the same time, the pusher 112 is pushed up as shown in FIG. 19 to move the third block 110C connected to the pusher 112. Push it up further. At this time, since the intermediate second block 110B is pushed up by the spring force of the compression coil spring 111B, the two second blocks 110B and the inner third block 110C are pushed up simultaneously. Then, when a part of the intermediate second block 110B (the surface indicated by the arrow in the drawing) comes into contact with the outer first block 110A, the ascent of the second block 110B and the inner third block 110C stops. To do. The force by which the pusher 112 pushes up the third block 110C is such that the compression coil spring 111A having a weak spring force contracts but the compression coil spring 111B having a strong spring force does not contract. Thus, after a part of the intermediate block 110B comes into contact with the outer first block 110A, the inner third block 110C does not protrude further upward.

  When the two second blocks 110B and the inner third block 110C are pushed upward, the first block 110A and the second block 110B are used in order to promote the separation between the chip 1C and the dicing tape 4. And the inside of the gap (S) of the third block 110C is depressurized to suck down the dicing tape 4 that is in contact with the chip 1C. Further, the inside of the groove 104 is decompressed, and the dicing tape 4 in contact with the periphery of the upper surface of the suction piece 102 is brought into close contact with the upper surface of the suction piece 102 (see FIG. 17).

  Next, as shown in FIG. 20, the inner third block 110C is further pushed up to push up the back surface of the dicing tape 4, and the top surface of the third block 110C supports the back surface of the chip 1C. FIG. 21 is an enlarged perspective view showing the vicinity of the upper surface of the suction piece 102 at this time (illustration of the chip 1C and the dicing tape 4 is omitted). In order to push up the inner third block 110C upward, as shown in FIG. 22, the third block 110C is pushed up with a strong force such that the compression coil spring 111B contracts. As a result, the separation between the chip 1C and the dicing tape 4 proceeds in a region outside the outer periphery (corner) of the upper surface of the third block 110C in contact with the dicing tape 4.

  Subsequently, as shown in FIG. 23, the third block 110 </ b> C is pulled down and the suction collet 105 is pulled up to complete the work of peeling the chip 1 </ b> C from the dicing tape 4.

  It is necessary to reduce the area of the upper surface of the third block 110C to such an extent that the chip 1C is peeled off from the dicing tape 4 only by the suction force of the suction collet 105 when the third block 110C is pushed upward. When the area of the upper surface of the third block 110C is large, the contact area between the chip 1C and the dicing tape 4 is increased, and the adhesive force between the two is also increased. The dicing tape 4 cannot be peeled off.

  On the other hand, when the area of the upper surface of the third block 110C is reduced, when the third block 110C pushes up the back surface of the dicing tape 4, a strong load is intensively applied to a narrow region (center portion) of the chip 1C. In extreme cases, the chip 1C may break. Therefore, when pushing up the block 110c, the pushing speed is slowed, the time during which the upper surface of the third block 110C is in contact with the dicing tape 4 is shortened, or the pushing amount (stroke) of the third block 110C is set. It is desirable to prevent a strong load from being applied to the narrow region of the chip 1C by reducing the number (for example, about 0.2 mm to 0.4 mm).

  Further, as one method for increasing the suction force of the suction collet 105, it is effective to slow the pulling-up speed of the suction collet 105. When the suction collet 105 is rapidly pulled up while a part of the chip 1C is in close contact with the dicing tape 4, a gap is formed between the bottom surface of the suction collet 105 and the top surface of the chip 1C, and the degree of vacuum inside the suction collet 105 decreases. Therefore, the force for sucking the chip 1C is reduced. On the other hand, when the pulling speed of the suction collet 105 is decreased, the time required for peeling the chip 1C from the dicing tape 4 becomes longer. Therefore, the pulling speed of the suction collet 105 is made variable, the pulling speed is slowed at the start of pulling to secure a sufficient suction force, and when the contact area between the chip 1C and the dicing tape 4 becomes small to some extent, the pulling speed is increased and peeling is performed. It is better to prevent time delays. It is also an effective method for increasing the suction force of the suction collet 105 to make the area of the bottom surface of the suction collet 105 larger than the area of the upper surface of the third block 110C.

  In this way, by increasing the suction force of the suction collet 105, even if the contact area between the chip 1C and the dicing tape 4 is relatively large, the chip 1C can be attached to the dicing tape 4 only by the suction force of the suction collet 105. Therefore, the peeling time can be shortened, and the above-described problem that occurs when the area of the upper surface of the third block 110C is reduced can be avoided.

  Further, if the third block 110C is pulled downward with the chip 1C pressed down by the suction collet 105, the suction collet 105 also moves downward, so that the chip 1C may hit the third block 110C and break. There is. Therefore, when lowering the third block 110C downward, it is desirable to pull up the suction collet 105 immediately before that or at least fix the position so that the suction collet 105 does not move downward.

  As described above, the thickness of the chip 1C is reduced to about 100 μm or less, and particularly when the chip 1C is thinned to 75 μm or less, the suction force of the suction collet 105 after being peeled off from the dicing tape 4 by the suction collet 105. It becomes easy to warp. Here, FIG. 24 is a cross-sectional view of the principal part of the bonding head 107 including the suction collet 105, and shows a state in which the chip 1C is sucked into the suction port 106 provided in the suction collet 105 and warped. It is. FIG. 25 is a plan view showing the suction surface (surface in contact with the chip 1C) of the suction collet 105. The cross section of the suction collet 105 shown in FIG. 24 is a cross section taken along the line AA in FIG. Equivalent to. FIG. 26 and FIG. 27 show a cross section and a plane of the suction collet 105 having a structure in which a groove 105H is provided in addition to the suction port 106 on the suction surface. When such a groove 105H is provided on the suction surface, the chip 1C is also sucked into the groove 105H and warped. When the warped chip 1C is arranged and mounted (adhered) on the wiring board 11 by the suction collet 105, it is mounted on the wiring board 11 in a warped state, and a void (bubble) is formed between the chip 1C and the chip 1C wiring board 11. In some cases, KH may be completed, and in particular, when DAF is used as an adhesive as in the first embodiment, it is easy to do. When such a void KH is completed, the mounting (adhesion) of the chip 1C becomes defective, and the chip 1C is mounted on the wiring board due to expansion of the void KH or the like in a process (for example, a resin sealing process) accompanied by heat later. 11 may be peeled off.

  Therefore, in the first embodiment, FIG. 29 shows a vacuum supply line that is connected to the suction port 106 provided on the bottom surface of the suction collet 105 and supplies the suction collet 105 with a decompression force for vacuum suction of the chip 1C. It is formed from such two systems. That is, a pipe that peels off the chip 1C from the dicing tape 4 and supplies a vacuum (about −80 kPa) to the suction collet 105 that serves as a suction force (first suction force) when the chip 1C is transferred to the mounting position on the wiring board 11 ( (First vacuum supply system) 121 and piping (second vacuum supply system) for supplying vacuum to the suction collet 105 as a suction force (second suction force) when the chip 1C is mounted on the wiring board 11 122 is connected to the suction collet 105. In the first embodiment, the strength of the vacuum supplied from the pipe 122 may be such that the tip 1C is not warped and the tip 1C is not dropped from the suction collet 105, and is about −10 kPa to 0 kPa. Preferably, it can be set to about −1 kPa to 0 kPa, and preferably about −5 kPa to 0 kPa if the thickness of the chip 1C is about 75 μm or more. Valves 123 and 124 such as electromagnetic valves are attached to the pipes 121 and 122, respectively, and the intensity of vacuum (adsorption force) supplied to the adsorption collet 105 can be controlled by opening and closing these valves 123 and 124.

  When the chip 1C is peeled off from the dicing tape 4 and transferred to the mounting position on the wiring board 11, the valve 123 is opened and the valve 124 is closed to peel the chip 1C from the dicing tape 4 to the suction collet 105. Then, a vacuum (about −80 kPa) serving as an adsorption force when transporting to the mounting position on the wiring board 11 is supplied. As a result, the above-described warpage occurs in the chip 1C. When the chip 1C is transferred to the mounting position on the wiring board 11, the valve 123 is closed and the valve 124 is opened, so that the suction collet 105 sucks the chip 1C. The force becomes weak, and the warp generated in the chip 1C can be eliminated. By thus mounting the chip 1C on the wiring board 11 after the warp has been eliminated, the generation of the aforementioned void KH (see FIG. 28) can be suppressed. Thereby, it is possible to prevent the chip 1C from being detached from the wiring board 11 after the chip 1C is mounted.

  Further, as shown in FIG. 30, the strength of the vacuum supplied from the pipe 121 is reduced by the amount of the vacuum supplied from the pipe 122, and the chip 1C is peeled off from the dicing tape 4 and mounted on the wiring board 11. When transferring to the position, both the valves 123 and 124 are opened, the chip 1C is peeled from the dicing tape 4 to the suction collet 105, and a vacuum (which becomes the suction force when transferring to the mounting position on the wiring board 11). -80 kPa) may be supplied. At the stage where the chip 1C is transferred to the mounting position on the wiring board 11, by closing only the valve 123, the configuration similar to that shown in FIG. 29 is obtained, and the warpage occurring in the chip 1C can be eliminated.

  In this way, the chip 1 </ b> C peeled from the dicing tape 4 is sucked and held by the suction collet 105 and conveyed to the next process (pellet attaching process). When the suction collet 105 that has transported the chip 1C to the next process returns to the chip peeling apparatus 100, the next chip 1C is peeled from the dicing tape 4 in accordance with the procedure shown in FIGS. Thereafter, the chips 1C are peeled off from the dicing tape 4 one by one according to the same procedure.

Next, as shown in FIG. 31, the chip 1 </ b> C transferred to the pelletizing process is mounted on the wiring board (mounting board) 11 (chip mounting area) by thermocompression bonding via the DAF 10 previously attached to the back surface. ) Implemented. At this time, in the first embodiment, since the warp is not generated in the chip 1C, it is possible to prevent the void KH (see FIG. 28) from being formed between the chip 1C and the wiring board 11. That is, the chip 1C can be reliably mounted (adhered) to the wiring board 11. Subsequently, the electrode 13 of the wiring board 11 is electrically connected via the Au wire 12. At this time, if a void KH is generated between the chip 1C and the wiring substrate 11, the void KH expands due to heat generated when the Au wire 12 is connected, and the chip 1C may be separated from the wiring substrate 11. However, in the first embodiment, since the generation of the void KH is prevented in advance, it is possible to prevent the occurrence of a problem such as peeling of the chip 1C.

  Next, as shown in FIG. 32, the second chip 14 is stacked on the chip 1C mounted on the wiring board 11 via the DAF 10 or the like, and the electrode 16 of the wiring board 11 is connected via the Au wire 15. Electrically connected. The second chip 14 is a silicon chip on which an integrated circuit different from the chip 1C is formed. After being peeled off from the dicing tape 4 by the above-described method, the second chip 14 is transported to the pelletizing step and mounted on the chip 1C (chip Stacked in the mounting area). In a package having a structure in which chips are stacked in this way, the chip becomes thin due to the demand for miniaturization and thinning of the package. Therefore, when the chip 1C and the second chip 14 are mounted, the above-described first embodiment. By applying the method, it is possible to particularly effectively prevent the generation of the void KH (see FIG. 28) between the chip 1C and the wiring substrate 11 and between the second chip 14 and the chip 1C.

  Thereafter, the wiring board 11 is transferred to a molding process, and the stacked package 18 is completed by sealing the chip 1C and the second chip 14 with a mold resin 17 as shown in FIG. At this time, in the first embodiment, the generation of the void KH is prevented in advance between the chip 1C and the wiring substrate 11 and between the second chip 14 and the chip 1C. As a result, the void KH expands, and the occurrence of a problem such that the chip 1C and the second chip 14 are separated can be prevented.

  In this embodiment, the method of peeling the chip using the three first blocks 110A, the second block 110B, and the third block 110C has been described. However, the number of blocks is limited to three. If the size of the chip 1C to be peeled is not large, four or more blocks may be used. Further, when the size of the chip 1C to be peeled is very small, two blocks may be used.

(Embodiment 2)
In the second embodiment, the vacuum supply line (see FIGS. 29 and 30) shown in the first embodiment has another configuration. Other processes and member configurations are the same as those in the above embodiment.

  FIG. 34 is an explanatory diagram of a vacuum supply line for supplying a depressurizing force to the suction collet 105 in the second embodiment. Also in the second embodiment, the vacuum supply line is formed from two systems, but what is supplied from the pipe 122 is not vacuum but air. The strength of the air supplied from the pipe (first air supply system) 122 supplies a moderately small flow rate with respect to the drawing flow rate on the vacuum side (pipe 121), and controls the vacuum pressure. For example, if the vacuum drawing flow rate of the pipe 121 is about 20 L (liter) / min, about 19 L (liter) / min of air is supplied from the pipe 122 to lower the vacuum pressure. When the chip 1C is peeled off from the dicing tape 4 and transferred to the mounting position on the wiring substrate 11, the valve 123 is opened and the valve 124 is closed, as in the first embodiment, so that the suction collet 105 The chip 1C is peeled from the dicing tape 4 and a vacuum (about −80 kPa) is supplied that serves as an adsorption force when the chip 1C is transferred to the mounting position on the wiring board 11. Next, when the chip 1C is transferred to the mounting position on the wiring substrate 11, both the valves 123 and 124 are opened. As a result, both vacuum and air are supplied, and the suction flow rate of vacuum supplied from the pipe 121 is stronger than the supply flow rate of air supplied from the pipe 122. Will be supplied. At this time, the suction force (vacuum) supplied to the suction collet 105 has such a strength that the chip 1C is not warped and the chip 1C is not dropped from the suction collet 105, and is about −10 kPa to 0 kPa, preferably − If the thickness of the chip 1C is about 75 μm or more, it is preferably about −5 kPa to 0 kPa. As a result, the force with which the suction collet 105 sucks the chip 1C becomes weak, and the warp generated in the chip 1C can be eliminated. As a result, similar to the first embodiment, the generation of the void KH (see FIG. 28) can be suppressed, and the chip 1C can be prevented from peeling from the wiring board 11 after the chip 1C is mounted. Is possible.

(Embodiment 3)
In the third embodiment, the thermocompression bonding process, which is the pelletizing process of the chip 1C described in the first and second embodiments, is performed by a temporary crimping process in which only a partial region of the chip 1C is thermocompression bonded; This is performed in two stages, a main press-bonding process in which the entire surface is thermo-compression bonded. The same applies to the pelletizing step of the second chip 14.

  FIG. 35 is a perspective view showing a main part of the bonding stage KBS used in the temporary press-bonding step, and FIG. 36 is a perspective view showing a main part in which the wiring substrate 11 and the chip 1C are arranged on the bonding stage KBS.

  The bonding stage KBS has a protrusion TK on the surface facing the wiring substrate 11 and the chip 1C. Here, FIG. 37 is an enlarged plan view showing the chip 1C arranged on the bonding stage (first bonding stage) KBS, and FIG. 38 shows the wiring substrate 11 and the chip 1C on the bonding stage KBS. FIG. 6 is an enlarged plan view of a main part in the vicinity of a protrusion (pressure jig) TK under the condition where is disposed. As shown in FIG. 37 and FIG. 38, the protrusion TK pressurizes the central area (temporary pressure bonding area) on the back surface of the chip 1C through the wiring substrate 11 during the temporary pressure bonding process of the chip 1C. In addition, the area | region which attached | subjected hatching in FIG. 37 is an area | region where the projection part TK is pressing. In the third embodiment, the protrusion TK is formed in advance so that the area where the protrusion TK is pressurized is about 10% to 40%, preferably about 25%, of the back surface of the chip 1C. . As a result, even if the chip 1C is warped due to the adsorption of the adsorption collet 105 (see FIG. 24), the chip 1C is likely to generate a void KH (see FIG. 28) after the chip 1C is mounted (adhered) on the wiring substrate 11. As a result, pressure is intensively applied to the central portion of the chip 1C, the warp generated in the chip 1C is eliminated, and the central portion is thermocompression bonded to the wiring board 11. That is, the generation of the void KH can be prevented. At this time, the area to which the load is applied in the chip 1C is an area indicated by hatching in FIG. 37, which is smaller than the entire surface of the chip 1C. Since a sufficient load can be applied per unit area even with a low load compared to the above, it is possible to effectively perform thermocompression bonding.

  After the temporary pressure bonding step as described above, a main pressure bonding step is performed in which the entire back surface of the chip 1C is thermally bonded to the wiring substrate 11. At the time of this main press-bonding process, since the warp of the chip 1C has been eliminated by the temporary press-bonding process, the entire back surface of the chip 1C can be reliably heat-bonded to the wiring board 11.

  Further, by combining the pelletizing step of the third embodiment as described above with the method for controlling the suction force of the chip 1C in the suction collet 105 described in the first and second embodiments, the void KH can be more effectively achieved. Can be suppressed.

(Embodiment 4)
FIG. 39 is a cross-sectional view of a main part of the bonding head 107 used in the fourth embodiment.

  As shown in FIG. 39, the bonding head 107 of the fourth embodiment holds the suction collet 105 and the suction collet 105 in contact with the chip 1C or the second chip 14 described in the first embodiment during the pelletizing process. Collet holder 105G, tilt adjustment mechanism (head portion) 105A to which collet holder 105G is attached, receiving seat (receiving seat portion) 105B in contact with tilt adjusting mechanism 105A, and magnet that holds the head portion magnetically through receiving seat 105B 105C or the like. In addition, a receiving portion for holding the tilt adjusting mechanism 105A is formed by the receiving seat 105B and the magnet 105C.

  For example, a tilt adjusting mechanism 105A formed of a magnetic metal such as high-speed tool steel or alloy high-speed tool steel has a spherical surface that is in contact with the receiving seat 105B. The receiving seat 105B is also formed of a magnetic metal such as high-speed tool steel or alloy high-speed tool steel, and the contact surface (first surface) with the tilt adjusting mechanism 105A is a spherical processed surface (second surface) of the tilt adjusting mechanism 105A. Spherical surface processing is performed according to the shape of The magnet 105C is made of, for example, a neodymium magnet, and holds the tilt adjusting mechanism 105A via the seat 105B with a magnetic force that allows the tilt adjusting mechanism 105A to operate along the spherical machining surface, for example, a magnetic force of about 5N. . That is, when a force of about 5N or more is applied to the tilt adjustment mechanism 105A during the pelletizing process, the tilt adjustment mechanism 105A operates along the spherical processed surface. Further, the spherical processed surfaces of the inclination adjusting mechanism 105A and the receiving seat 105B are formed with such a curvature that the inclination adjusting mechanism 105A can operate when a force of about 5N or more is applied to the inclination adjusting mechanism 105A.

  A plurality of depressions (concave portions) may be formed by performing dimple processing on the spherical processed surface of the tilt adjusting mechanism 105A and the spherical processed surface of the receiving seat 105B. Thereby, the contact area between the tilt adjusting mechanism 105A and the receiving seat 105B can be reduced, so that the friction between them can be reduced and the tilt adjusting mechanism 105A can be operated easily. Moreover, since the dimple processing can improve the surface hardness of the spherical processed surface of the inclination adjusting mechanism 105A and the spherical processed surface of the receiving seat 105B, the wear resistance of both can be improved.

  When the chip 1C and the second chip 14 are mounted, if the back surface of the chip 1C and the second chip 14 and the mounting surface in the mounting area are not parallel, the heat of the chip 1C and the second chip 14 There is a possibility that the pressure bonding is not uniform over the entire back surface, and the void KH (see FIG. 28) as described in the first embodiment may occur. In particular, when the second chip 14 is mounted, the mounting surface is on the first chip 1C, and it is necessary not to be parallel to the wiring substrate 11 on which the chip 1C is mounted but to be parallel to the chip 1C. If the chip 1C is mounted in an inclined state, the two chips 14 cannot be kept parallel when the second chip 14 is mounted. In the fourth embodiment, since the tilt adjustment mechanism 105A is operable by a load, when the chip 1C and the second chip 14 come into contact with the mounting region, the chip 1C and the second chip 14 are interposed. The head portion 105A is operated by the applied load, and the back surfaces of the chip 1C and the second chip 14 follow the mounting surface in the mounting region and are parallel to the mounting surface. Here, FIG. 40 is an enlarged cross-sectional view showing the main parts of the bonding head 107, the second chip 14, and the chip 1C when the second chip 14 is mounted on the chip 1C. That is, according to the fourth embodiment, it is possible to mount the chip 1C and the second chip 14 without generating the void KH as described in the first embodiment.

  When the load applied to the chip 1C and the second chip 14 is limited when the chip 1C and the second chip 14 are mounted, for example, the tilt adjusting mechanism 105A via the receiving seat 105B with a small magnetic force such as 1N. This can be dealt with by selecting the magnet 105C that holds and setting the curvatures of the spherical machining surfaces of the tilt adjusting mechanism 105A and the receiving seat 105B so that the tilt adjusting mechanism 105A can operate in accordance with the magnetic force.

  Further, the bonding head 107 of the fourth embodiment as described above is combined with the method for controlling the suction force of the chip 1C in the suction collet 105 described in the first and second embodiments, or the third embodiment. The generation of the void KH can be more effectively suppressed by combining the method of performing the pelletizing process of the chip 1C described in 2 in two steps, that is, the temporary pressure bonding process and the main pressure bonding process.

(Embodiment 5)
41 is a plan view showing the bonding head 107 according to the fifth embodiment from the tilt adjusting mechanism 105A side, and FIG. 42 is a main part showing a cross section of the bonding head 107 along the line XX in FIG. 43 is a cross-sectional view of the principal part showing a cross section of the bonding head 107 along the line YY in FIG. 41. In FIGS. 42 and 43, the chip sucked and held by the suction collet 105 is shown. A 1C or second chip 14 is also shown. The XX line is perpendicular to the YY line.

  As shown in FIGS. 42 and 43, the bonding head 107 according to the fifth embodiment includes an inclination adjusting mechanism 105A, a receiving seat (first receiving seat) 105B, a magnet (first magnet) 105C, and an inclination adjusting mechanism. (First magnetic body portion) 105D, a receiving seat (second receiving seat portion) 105E, a magnet (second magnet) 105F, and the like. Further, the receiving seat 105B, the magnet 105C, and the tilt adjusting mechanism 105D form a first receiving portion that holds the tilt adjusting mechanism 105A, and the receiving seat 105E and the magnet 105F hold the first receiving portion. A receiving part is formed.

  The tilt adjusting mechanism 105A is formed of a magnetic metal such as high-speed tool steel or alloy high-speed tool steel in the same manner as the tilt adjusting mechanism 105A (see FIG. 39) described in the fourth embodiment. It is in contact with the chip 1C or the second chip 14 described in the first embodiment. Further, the surface (second surface) in contact with the receiving seat 105B of the tilt adjusting mechanism 105A is subjected to curved surface processing that becomes a first curvature curve in the XX section (first direction). Similarly to the receiving seat 105B described in the fourth embodiment, the receiving seat 105B is in contact with the inclination adjusting mechanism 105A and is made of a magnetic metal (first magnetic material) such as high-speed tool steel or alloy high-speed tool steel. The formed contact surface (first surface) with the tilt adjustment mechanism 105A is curved to match the shape of the curved processing surface of the tilt adjustment mechanism 105A. The magnet 105C is formed of, for example, a neodymium magnet, similar to the magnet 105C described in the fourth embodiment, and a magnetic force (e.g., about 5N) that the tilt adjusting mechanism 105A can operate along the curved surface. 1), the tilt adjusting mechanism 105A is held via the receiving seat 105B. The tilt adjusting mechanism 105D is made of a magnetic metal such as high-speed tool steel or alloy high-speed tool steel, and is disposed on the magnet 105C to contact the magnet 105C, and the surface contacting the receiving seat 105E is a YY cross section (second cross section). In the direction), curved surface processing is performed to form a second curvature curve. Similarly to the receiving seat 105B, the receiving seat 105E is formed of a magnetic metal (second magnetic material) such as high-speed tool steel or alloy high-speed tool steel, and is in contact with the tilt adjusting mechanism 105D. The contact surface (third surface) is curved to match the shape of the curved surface of the tilt adjusting mechanism 105D. The magnet 105F is formed of, for example, a neodymium magnet, similarly to the magnet 105C, and the receiving seat 105E with a magnetic force that allows the tilt adjusting mechanism 105D to operate along the curved surface, for example, a magnetic force of about 5N (second magnetic force). The tilt adjustment mechanism 105D is held via At the time of the pelletizing step, the tilt adjusting mechanism 105A and the tilt adjusting mechanism 105D operate along respective curved surfaces when a force of about 5N or more is applied. Further, regarding the curved surface of the tilt adjusting mechanism 105A, the receiving seat 105B, the tilt adjusting mechanism 105D and the receiving seat 105E, when a force of about 5N or more is applied to the tilt adjusting mechanism 105A and the tilt adjusting mechanism 105D, the tilt adjusting mechanism 105A. And a curvature with which the tilt adjusting mechanism 105D can operate.

  The dimple processing is performed on the curved surface of the tilt adjusting mechanism 105A, the curved surface of the receiving seat 105B, the curved surface of the tilt adjusting mechanism 105D, and the curved surface of the receiving seat 105E to form a plurality of depressions (concave portions). May be. As a result, the contact area between the tilt adjusting mechanism 105A and the receiving seat 105B and the contact area between the tilt adjusting mechanism 105D and the receiving seat 105E can be reduced, so that friction at each contact surface is reduced and the tilt adjusting mechanism 105A operates. Can be easier. Further, the dimple processing can improve the surface hardness of the curved surface of the tilt adjusting mechanism 105A, the curved surface of the receiving seat 105B, the curved surface of the tilt adjusting mechanism 105D, and the curved surface of the receiving seat 105E. The wear resistance can be improved.

  The structure of the other members is the same as that in the fourth embodiment.

  In the fifth embodiment, the inclination adjustment mechanism 105A and the inclination adjustment mechanism 105D can be operated in the XX line direction and the YY line direction shown in FIG. 41 by a load, respectively. Therefore, when the chip 1C and the second chip 14 come into contact with the mounting area, the tilt adjusting mechanism 105A and the tilt adjusting mechanism 105D are operated by a load applied via the chip 1C and the second chip 14, and the chip 1C and the second chip 14 are operated. The back surface of the chip 14 follows the mounting surface in the mounting region and is parallel to the mounting surface. That is, according to the fifth embodiment, it is possible to mount the chip 1C and the second chip 14 without generating the void KH (see FIG. 28) as described in the first embodiment.

  When the load applied to the chip 1C and the second chip 14 is limited when the chip 1C and the second chip 14 are mounted, for example, the tilt adjusting mechanism 105A via the receiving seat 105B with a small magnetic force such as 1N. The magnet 105C that holds the tilt adjustment mechanism 105D is selected via the receiving seat 105E with a small magnetic force such as 1N. The curved surface of the tilt adjusting mechanism 105A, the curved surface of the receiving seat 105B, the curved surface of the tilt adjusting mechanism 105D, and the receiving seat 105E so that the tilt adjusting mechanism 105A and the tilt adjusting mechanism 105D can operate in accordance with the magnetic force. This can be dealt with by setting the curvature of the curved surface.

  Further, the bonding head 107 of the fifth embodiment as described above is combined with the method for controlling the suction force of the chip 1C in the suction collet 105 described in the first and second embodiments, or the third embodiment. The generation of the void KH can be more effectively suppressed by combining the method of performing the pelletizing process of the chip 1C described in 2 in two steps, that is, the temporary pressure bonding process and the main pressure bonding process.

  According to the fifth embodiment as described above, the same effect as in the fourth embodiment can be obtained.

(Embodiment 6)
In the first embodiment, the first block 110A, the second block 110B, and the third block 110C (hereinafter, the first block 110A, the second block 110B, and the third block 110C are combined to form a multistage type. The means for pushing up the dicing tape 4 from the back surface by a pushing jig) and peeling the chip 1C from the dicing tape by the suction collet 105 has been described. In the sixth embodiment, in addition to such a multistage push-up jig, a plurality of push-up pins (push-up jigs) 131 as shown in FIG. 44, or longitudinal vibration with a predetermined frequency and wavelength as shown in FIG. A horn (push-up jig) 132 for adding a squeeze to the dicing tape 4 may be used. Although not shown, the plurality of push-up pins 131 and horns 132 are housed in the same suction piece as the suction piece 102 shown in the first embodiment (see FIGS. 9 to 11). However, the dicing tape 4 is pushed up under the condition that the dicing tape 4 is adsorbed.

  The multistage push-up jig described in the first embodiment has a total speed of about 0.6 mm to 1.5 mm at a speed of about 1 mm / second to about 100 mm / second when, for example, one side of the chip 1C is about 100 μm or more. The dicing tape 4 is pushed up by about 1.2 mm. For example, when one side of the chip 1C is less than about 100 μm, the total speed is about 0.6 mm to 1.5 mm, preferably about 1.2 mm at a speed of 1 mm / second to about 100 mm / second, preferably about 30 mm / second. The dicing tape 4 is pushed up.

  For example, when one side of the chip 1C is about 100 μm or more, the plurality of push-up pins 131 as shown in FIG. 44 is about 0.05 mm to 0.6 mm, preferably 0 at a speed of about 1 mm / sec to about 30 mm / sec. Push up the dicing tape 4 about 3 mm. For example, when one side of the chip 1C is less than about 100 μm, the dicing tape has a speed of about 1 mm / sec to about 30 mm / sec, preferably about 5 mm / sec and about 0.05 mm to 0.6 mm, preferably about 0.3 mm. Push 4 up. The plurality of push-up pins 131 make it easy to peel off the chip 1C to be peeled from the dicing tape 4 by sliding when the dicing tape 4 is pushed up.

  For example, when one side of the chip 1C is about 100 μm or more, the horn 132 as shown in FIG. 45 is about 0.05 mm to 0.6 mm in total at a speed of about 1 mm / sec to about 100 mm / sec, preferably about 0.1 mm. The dicing tape 4 is pushed up about 3 mm. For example, when one side of the chip 1C is less than about 100 μm, the dicing tape 4 is pushed up at a speed of about 1 mm / sec to about 100 mm / sec, preferably about 20 mm / sec, about 50 μm to 600 μm, preferably about 300 μm. When the dicing tape 4 is pushed up, the horn 132 applies longitudinal vibration (ultrasonic waves) to the dicing tape 4 with a frequency of about 1 kHz to 100 kHz and an amplitude (first amplitude) of about 1 μm to 50 μm, preferably about 10 μm to 20 μm. By adding, the chip 1C to be peeled is easily peeled from the dicing tape 4.

  When peeling the chip 1C from the dicing tape 4, there is a case where the peeling of the chip 1C from the dicing tape 4 fails (hereinafter referred to as chip 1C pick-up mistake). In the sixth embodiment, countermeasures are taken when such a pickup error of the chip 1C occurs. FIG. 46 is a flowchart showing how to deal with a pick-up mistake of the chip 1C from the dicing tape when the multistage push-up jig, the push-up pin 131 are used, and when the horn 132 is used. .

  When the multistage push-up jig described in the first embodiment is used, first, the suction collet 105 performs a peeling operation (pickup operation) from the dicing tape 4 of the chip 1C to be peeled (step P1). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation is performed again under the same operating conditions (step P2). Even if the pickup operation under this same operating condition (hereinafter referred to as retry operation) occurs multiple times (for example, 3 times) continuously, the multi-stage type push-up jig can be moved from about 30 mm / second to a second speed. A retry operation is performed with the pressure lowered to about 10 mm (process P3). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation may be performed again under the same operating conditions. When a pickup error occurs under such conditions, a retry operation is performed by lowering the push-up speed of the multi-stage push-up jig from about 10 mm / second to about 50 mm / second (step P4). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation may be performed again under the same operating conditions. If a pickup error occurs under such conditions, a retry operation is performed under the condition that the amount of stretching of the dicing tape 4 is reduced by about 1 mm (step P5). Thus, by reducing the amount of stretching of the dicing tape 4, the tension of the dicing tape 4 is reduced, and the suction efficiency of the dicing tape 4 by the aforementioned suction piece can be improved. Thereby, even if the multistage push-up jig pushes up the dicing tape 4, the suction of the dicing tape 4 by the suction piece can be maintained, so that the chip 1 </ b> C to be peeled can be easily peeled off from the dicing tape 4. . If a pickup error occurs again under these conditions, the pickup operation may be performed again under the same operating conditions. If a pickup error occurs again, the pickup operation is performed again according to steps P2 to P4 described above. You may go. When the chip 1C is successfully picked up (step P6), the chip 1C is transported to the mounting position (step P7), and the chip 1C is mounted using the method described in the first to fifth embodiments (step P8). The semiconductor device of the sixth embodiment is manufactured by resin sealing.

  When the plurality of push-up pins 131 shown in FIG. 44 are used, first, the suction collet 105 performs a peeling operation (pickup operation) from the dicing tape 4 of the chip 1C to be peeled (step P9). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation is performed again under the same operating conditions (step P10). In this pickup operation under the same operating conditions (hereinafter referred to as retry operation), when pickup mistakes occur continuously a plurality of times (for example, three times), the time required for the plurality of push-up pins 131 to slide on the dicing tape 4 The retry operation is performed under the condition that is increased by about 0.05 seconds (50 msec) (step P11). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation may be performed again under the same operating conditions. If a pickup error occurs under such conditions, a retry operation is performed under the condition that the push-up amounts of the push-up pins 131 are increased by about 50 μm (process P12). Here, when a pick-up mistake occurs in the chip 1C to be peeled off, the pick-up operation may be performed again under the same operating conditions. When a pickup error occurs under such conditions, a retry operation is performed under the condition that the amount of stretching of the dicing tape 4 is reduced by about 1 mm as in the case of using the multistage push-up jig described above (process) P5). Thus, by reducing the amount of stretching of the dicing tape 4, the tension of the dicing tape 4 is reduced, and the suction efficiency of the dicing tape 4 by the aforementioned suction piece can be improved. Thereby, even if the plurality of push-up pins 131 push up the dicing tape 4, the suction of the dicing tape 4 by the suction piece can be maintained, so that the chip 1 </ b> C to be peeled can be easily peeled from the dicing tape 4. . If a pickup error occurs again under these conditions, the pickup operation may be performed again under the same operating conditions. If a pickup error occurs again, the pickup operation is performed again according to steps P10 to P12 described above. You may go. Subsequent steps are the same as in the case of using the aforementioned multi-stage push-up jig.

  When the horn 132 shown in FIG. 45 is used, first, the suction collet 105 performs a peeling operation (pickup operation) from the dicing tape 4 of the chip 1C to be peeled (process P13). When a pickup error occurs under such conditions, a retry operation is performed under the condition where the amplitude of the longitudinal vibration (ultrasonic wave) applied to the dicing tape by the horn 132 is reduced to 50% or less (process P14). When a pickup error occurs under such conditions, the amount of stretching of the dicing tape 4 is reduced by about 1 mm as in the case of using the multi-stage push-up jig and the case of using a plurality of push-up pins 131. The retry operation is performed under the conditions (step P5). Thus, by reducing the amount of stretching of the dicing tape 4, the tension of the dicing tape 4 is reduced, and the suction efficiency of the dicing tape 4 by the aforementioned suction piece can be improved. Thereby, even if the horn 132 pushes up the dicing tape 4, the adsorption of the dicing tape 4 by the adsorption piece can be maintained, so that the chip 1 </ b> C to be separated can be easily separated from the dicing tape 4. If a pickup mistake occurs again under such conditions, the pickup operation may be performed again according to the above-described process P14. Subsequent steps are the same as in the case of using the aforementioned multi-stage push-up jig.

(Embodiment 7)
When the chip 1C to be peeled is peeled from the dicing tape 4 using the horn 132 shown in the sixth embodiment (see FIG. 45), the chip 1C is peeled off when the pickup collet 105 causes a pickup mistake. May have progressed halfway. In such a case, the adhesive force between the chip 1C and the dicing tape 4 has changed from the initial state, and when the horn 132 is pushed up under the same pushing-up conditions, the chip 1C to be peeled off becomes a dicing tape due to excessive vibration. 4 and the accuracy of the position where the suction collet 105 is sucked may be lowered. Further, when the thickness of the chip 1C is reduced, the contact strength differs even under the same longitudinal vibration (ultrasonic wave) applied from the horn 132, so that there is a case where the pick-up error occurs without causing the separation to progress halfway. . In the seventh embodiment, a pickup mistake of the chip 1C when such a horn 132 is used is taken as a countermeasure.

  For example, a pickup error occurs under the conditions of longitudinal vibration (ultrasonic waves) when the horn 132 described in the sixth embodiment is used (frequency is about 1 kHz to 100 kHz and amplitude is about 1 μm to 50 μm, preferably about 10 μm to 20 μm). If this occurs, a retry operation is performed along the process P14 described with reference to FIG. 46 in the sixth embodiment. At the time of the retry operation, the retry operation is performed under the condition that the amplitude excited from the horn 132 is reduced to a predetermined amount, for example, about 5 μm. Thereby, excessive vibration to the chip 1C to be peeled can be prevented and the chip 1C can be prevented from moving on the dicing tape 4, so that the suction collet 105 sucks the chip 1C with accurate positional accuracy. Is possible. If retry operation is premised in advance, the amplitude to be vibrated from the horn 132 during the first pick-up operation (process P13) is set small, so that the chip 1C to be peeled off during the first pick-up operation is set. It is possible to prevent excessive excitation.

  Further, instead of reducing the amplitude excited from the horn 132 as described above, the retry operation (step P14) is performed under the condition that the amount of pushing up the horn 132 is reduced to a predetermined amount, for example, about 100 μm (see FIG. 47). . As a result, the push-up speed does not change and only the push-up amount is changed, so that the vibration time for the chip 1C can be reduced. By reducing the vibration time, it is possible to prevent excessive vibration to the chip 1C to be peeled off, so that the chip 1C is prevented from moving on the dicing tape 4, and the suction collet with accurate positional accuracy. 105 can adsorb the chip 1C. Similarly to the case where the means for reducing the amplitude excited from the horn 132 is used, if a retry operation is preliminarily assumed, the horn 132 is excited during the first pickup operation (step P13). By setting the amplitude small, it is possible to prevent excessive vibration from being applied to the chip 1C to be peeled off during the first pick-up operation.

  The chip 1C pick-up process (process P6) and the subsequent processes P7 and P8 are the same as the processes P6 to P8 described in the sixth embodiment.

(Embodiment 8)
In the eighth embodiment, countermeasures against warping (deformation) of the chip 1C when the horn 132 is used.

  48 is a cross-sectional view of a main part of the horn 132 according to the eighth embodiment. FIG. 49 is a plan view of the horn 132 viewed from the front end side in contact with the dicing tape 4. FIG. It is the top view which compared the magnitude | size with the chip | tip 1C of peeling object from the front-end | tip part and the dicing tape 4. FIG.

  According to experiments conducted by the present inventors, when the chip 1C is peeled off from the dicing tape 4 (see FIG. 45) by longitudinal vibration (ultrasonic) vibration using the horn 132, the chip 1C The progress of peeling was faster at the center and the progress of peeling was slower at the periphery of the chip 1C. In such a case, heat generated by vibration is applied to the chip 1C, and in the case of a DAF product, there is a concern that the chip 1C may be peeled off due to the heat and adhered to the center portion and cannot be peeled off. . Therefore, in the eighth embodiment, as shown in FIGS. 48 to 50, a lateral hole (gap) 132H is provided at the tip of the horn 132. In the eighth embodiment, when the tip of the horn 132 is a flat surface and a rectangle whose one side length W1 is 9 mm, the horizontal hole 132H is a flat surface and provided at the center of the side surface of the horn 132, and its diameter R1 is 1 mm to 3 mm. It can be exemplified as a degree. Further, the distance L1 from the outer periphery of the tip of the horn 132 to the outer periphery of the chip 1C on a plane is set to be about 1 mm to 2 mm. Providing such a horizontal hole 132H makes it difficult to transmit vertical vibration (ultrasonic waves) to the tip of the horn 132 corresponding to the horizontal hole 132H in a plane when the chip 1C is picked up. Thereby, peeling in the peripheral part of chip | tip 1C is accelerated | stimulated, the heat_generation | fever in a center part can be suppressed and sticking can be prevented. Even if the longitudinal vibration (ultrasonic) vibration cannot be peeled only at the center of the chip 1C, the bonding area between the chip 1C and the dicing tape 4 becomes small, so peeling by suction with the suction collet 105 (see FIG. 45). can do.

  Even when a pickup mistake occurs, the retry operation can be performed along the steps P13 to P14 (see FIGS. 46 and 47) described in the sixth and seventh embodiments.

  The chip 1C pick-up process and subsequent processes are the same as the processes P6-P8 described in the sixth embodiment.

(Embodiment 9)
Similarly to the eighth embodiment, the ninth embodiment also takes measures against warping (deformation) of the chip 1C when the horn 132 is used.

  51 is a cross-sectional view of the main part of the horn 132 according to the ninth embodiment. FIG. 52 is a plan view of the horn 132 as viewed from the front end side in contact with the dicing tape 4. FIG. It is the top view which compared the magnitude | size with the chip | tip 1C of peeling object from the front-end | tip part and the dicing tape 4. FIG.

  As shown in FIGS. 51 to 53, in the ninth embodiment, the horn 132 is formed of a tip member (first member) 132T and a lower member (second member) 132B. Further, the tip member 132T and the lower member 132B have a shape in which the tip member 132T has a T-shaped cross section and is inserted into the lower member 132B so that a gap 132S is formed in a central region between them. It has become. In the ninth embodiment, the gap 132S is a plane rectangle, and when the tip member 132T is a plane and is a rectangle with a side length W1 of 9 mm, the diameter (length of one side) R1 of the gap 132S is 1 mm to 3 mm. It can be exemplified as a degree. Further, the distance L1 from the outer periphery of the tip of the horn 132 to the outer periphery of the chip 1C on a plane is set to be about 1 mm to 2 mm. By forming the horn 132 from the tip member 132T and the lower member 132B in which such a gap 132S is formed, it corresponds to the gap 132S in a plane as in the case where the horizontal hole 132H is provided in the eighth embodiment. Longitudinal vibration (ultrasonic waves) is difficult to be transmitted to the tip of the horn 132 when the chip 1C is picked up. As a result, similarly to the eighth embodiment, it is possible to promote peeling at the peripheral portion of the chip 1C, suppress the progress of peeling at the central portion, and prevent warpage.

  The gap 132S may be a planar circle (not shown) having a diameter R1 of about 1 mm to 3 mm.

  Also in this ninth embodiment, the same effect as in the eighth embodiment can be obtained.

(Embodiment 10)
The wiring substrate 11 illustrated in the first embodiment (see, for example, FIGS. 31 to 33) includes a mounting process of the chip 1C and the second chip 14 in a state where a plurality of sheets are accommodated in a predetermined magazine, Au wire 15 connecting steps and a sealing step with the mold resin 17 and the like are carried to the place where each step is performed. The wiring board 11 may be subjected to heat treatment (for example, bake treatment after sealing with mold resin 17 (see FIG. 33)) while being accommodated in the magazine, and the magazine is deformed by heat during the heat treatment. As a result, the dimensions of the magazine may vary. When the wiring board 11 is taken out from the magazine, the taking-out position of the wiring board 11 is determined on the basis of the dimensions of the magazine. Therefore, when the magazine having such a variation in dimensions is used again, the wiring board 11 is taken out. There is a possibility that the position shifts and the wiring board 11 collides with other members when the wiring board 11 is taken out of the magazine, and the wiring board 11 is damaged. In particular, when a plurality of chips 1C and the second chip 14 are mounted on the wiring board 11, all the chips 1C and the second chips mounted as a result of one wiring board 11 being damaged. The chip 14 may be wasted. The tenth embodiment takes measures against such damage when the wiring board 11 is taken out from the magazine.

  54 and 55 are a top view and a side view, respectively, of a wiring board supply mechanism that takes out the wiring board 11 from the magazine (housing jig) 151 and supplies it to the transport rail (transport track) 150 in the tenth embodiment. FIG. 56 is a side view of the magazine 151.

  As shown in FIGS. 54 and 55, the wiring board supply mechanism holds the magazine 151 and moves up and down in the vertical direction (hereinafter referred to as the Z direction) in FIG. 55 and in the horizontal direction in FIG. The magazine transfer jig 152, the holding jig 153, the linear guide 154, and the drive mechanism 155 that perform parallel movement, the dimension measurement jig including the drive mechanism 155, the data storage mechanism 156, the stage 157, and the stage 157 hold down the magazine 151 and are arranged. The fixing jig 158 for fixing the magazine 151, the top plate 159, the fixing jig 160 for holding the magazine 151 held by the magazine transfer jig 152 from above, and the like.

  The holding jig 153 that forms the dimension measuring jig and the drive mechanism 155 are connected by a connecting member 161, and the connecting member 161 can be translated along the linear guide 154 in the left-right direction on the paper surface of FIG. 54. It has become. That is, the holding jig 153 moves in parallel with the operation of the drive mechanism 155 along the linear guide 154 in the left-right direction on the paper surface of FIG. The drive mechanism 155 and the linear guide 154 are fixed to a top plate 159 whose installation position is fixed. The installation position of the stage 157 is also fixed.

  The data storage mechanism 156 records the movement amount of the holding jig 153 corresponding to the operation amount of the drive mechanism 155. Fine adjustment of the holding position of the magazine 151 by the magazine transfer jig 152 described later is performed by the data storage mechanism. This is performed based on the amount of movement of the pressing jig 153 recorded in 156.

  As shown in FIG. 56, the magazine 151 has a structure in which the wiring board 11 can be accommodated in a plurality of stages, and is transferred by the magazine transfer jig 152 to the position where the wiring board 11 is supplied to the transport rail 150. At the same time, it has an opening through which the wiring board 11 is taken out facing the transport rail 150.

  FIG. 57 is a flowchart showing a process from measuring the dimensions of the magazine 151 to moving the magazine 151 to the supply position of the wiring board 11 in consideration of the variation in the dimensions of the magazine 151. 58, FIG. 60, FIG. 64, FIG. 67, FIG. 69, FIG. 71, and FIG. 73 are top views of the dimension measuring jig for explaining the details of the steps of the flowchart shown in FIG. 61, 62, 63, 65, 66, 68, 70, 72, 74, 75, 76, and 77 explain details of the steps of the flowchart shown in FIG. 57. It is a side view of the said dimension measuring jig to do. With reference to FIGS. 57 to 77, a process for measuring the variation in the dimensions of the magazine 151 and a process for moving the magazine 151 to the supply position of the wiring board 11 in consideration of the variation will be described.

  First, as shown in FIGS. 58 and 59, a magazine 151 containing a wiring board 11 (not shown) is supplied onto a stage 157 (process P21). At this time, if the distance from the magazine 151 to the back plate 162 is larger than the width of the magazine 151 (corresponding to the left and right directions on the paper surface of FIGS. 58 and 59), the fixing jig 158 will remove the magazine 151 in a later step. Since the magazine 151 may fall down when pressed, the magazine 151 is arranged on the stage 157 so that the distance from the magazine 151 to the back plate 162 is equal to or smaller than the width of the magazine 151. Next, the drive mechanism 155 is driven, and the holding jig 153 is operated up to the back plate 162 of the magazine transfer jig 153. Thereby, the back plate 162 is arranged in the left-right direction (hereinafter referred to as the Y direction (third direction)) in FIG. 58 and FIG. 59 when the magazine 151 is supplied onto the stage 157. A coordinate (hereinafter referred to as a first Y coordinate) can be obtained, and the first Y coordinate is recorded in the data storage mechanism 156.

  Next, as shown in FIGS. 60 and 61, the drive mechanism 155 is driven to return the holding jig 153 to the original position, and then the magazine 151 is moved by the fixing jig 158 to the back plate 162 of the magazine transfer jig 152. Press on. Subsequently, as shown in FIG. 62, the magazine transfer jig 152 is raised to a position where the lower holding jig 163 of the magazine transfer jig 152 is in contact with the bottom of the magazine 151. Subsequently, as shown in FIG. 63, the magazine 151 is further raised by raising the magazine transfer jig 152, and the magazine 151 is fixed by sandwiching the magazine 151 between the lower holding jig 163 and the fixing jig 160. (Process P22).

  Next, as shown in FIGS. 64 and 65, with the magazine 151 sandwiched between the lower holding jig 163 and the fixing jig 160, the magazine transfer jig 152 and the fixing jig 160 are moved to the origin positions in the Y direction. Move to. The origin position is a reference position for supplying the wiring board 11 from the magazine 151 set in advance to the transport rail 150, and the coordinates in the Y direction of the back plate 162 at the origin position (hereinafter referred to as the second position). (Denoted as Y coordinate) is recorded in the data storage mechanism 156 in advance. Note that the opening of the magazine 151 is perpendicular to the Y direction on the plane of FIG. 64 and opens in the X direction (fourth direction) in which the transport rail 150 extends. Subsequently, as shown in FIG. 66, the magazine transfer jig 152 is raised to a height (dimension measurement position) at which the wiring board 11 can be supplied from the magazine 151 to the transport rail 150 (process P23).

  Next, as shown in FIGS. 67 and 68, the drive mechanism 155 is driven to press the pressing jig 153 against the side surface of the magazine 151 held by the magazine transfer jig 152 (process P24). Thereby, the coordinate in the Y direction of the side surface of the magazine 151 (hereinafter referred to as the third Y coordinate) can be obtained.

  Subsequently, the first Y-direction movement amount of the magazine transfer jig 152 from the first Y coordinate to the second Y coordinate is obtained from the first Y coordinate and the second Y coordinate. Here, in the tenth embodiment, when the first Y coordinate, the second Y coordinate, and the third Y coordinate are set, the coordinate becomes larger toward the right side of the paper in FIGS. When the Y coordinate is set, the first Y-direction movement amount is a positive numerical value, and the Y coordinate is set so that the coordinate decreases as it goes to the right of the page in FIGS. If there is, the first movement amount in the Y direction is a negative value. Next, the width (first width) of the magazine 151 is obtained from the first Y coordinate, the third Y coordinate, and the first Y-direction movement amount. That is, the absolute value of the numerical value obtained from the first Y coordinate + the first Y-direction movement amount−the third Y coordinate is the width of the magazine 151 (process P25). Next, as shown in FIGS. 69 and 70, the driving mechanism 155 is driven to return the pressing jig 153 to the original position.

  Next, as shown in FIGS. 71 and 72, the magazine transfer jig 152 and the fixing jig 160 are moved so that the center of the magazine 151 and the center of the transport rail 151 are aligned in the Y direction. The amount of movement (first difference) at this time is the center coordinates of the transport rail 151 in the Y direction recorded in advance in the data storage mechanism 156, the width of the magazine 151 determined in the above-described process, and the back plate before movement. It can be obtained from the 162 coordinates (second Y coordinate). In addition, the coordinate in the Y direction of the back plate 162 after the movement is recorded in the data storage mechanism 156 as the fourth Y coordinate.

  In the process so far, the magazine 151 can be transferred to the position where the wiring board 11 can be supplied from the magazine 151 to the transport rail 150 (mounting board take-out position), but is held by the magazine transfer jig 152 in the process so far. There is a possibility that the magazine 151 is tilted. In that case, there is a possibility that a slight positional deviation occurs between the position where the wiring board 11 is taken out from the magazine 151 and the position where the transport rail 150 is installed. Therefore, in the tenth embodiment, in order to correct this minute positional deviation, as shown in FIGS. 73 and 74, first, the drive mechanism 155 is driven, and the side surface of the magazine 151 held by the magazine transfer jig 152 is shown. The holding jig 153 is pressed against. Subsequently, as shown in FIG. 75, the fixing jig 160 is loosened, and the inclination of the magazine 151 is corrected by pressing from the holding jig 153. At this time, if the magazine 151 is not inclined, the posture of the magazine 151 is not changed.

  Next, as shown in FIG. 76, the fixing jig 160 is tightened to fix the magazine 151. Subsequently, the drive mechanism 155 is driven, and the pressing jig 153 is pressed against the side surface of the magazine 151 held by the magazine transfer jig 152. Thereby, the coordinate in the Y direction of the side surface of the magazine 151 whose inclination is corrected (hereinafter referred to as the fifth Y coordinate) can be obtained. In FIG. 76, the one-point difference line indicated by C1 is the center position in the Y direction of the transport rail 150, and the one-point difference line indicated by C2 is the center position in the Y direction of the magazine 151 whose inclination is corrected. It is.

  Subsequently, the second Y-direction movement amount of the magazine transfer jig 152 from the first Y coordinate to the fourth Y coordinate is obtained from the first Y coordinate and the fourth Y coordinate. Next, the width of the magazine 151 after the inclination correction is obtained from the first Y coordinate, the fifth Y coordinate, and the second Y-direction movement amount (process P25). That is, the absolute value of the numerical value obtained from the first Y coordinate + the second Y-direction movement amount−the fifth Y coordinate is the width of the magazine 151 after the inclination correction. Next, from the center coordinates of the transport rail 151 in the Y direction recorded in advance in the data storage mechanism 156, the width of the magazine 151 after the inclination correction, and the coordinates of the back plate 162 (fourth Y coordinate), A correction movement amount of the magazine transfer jig 152 and the fixing jig 160 for matching the center position in the Y direction with the center position in the Y direction of the magazine 151 after the inclination correction is obtained (step P26). Next, the drive mechanism 155 is driven to return the pressing jig 153 to the original position.

  Next, as shown in FIG. 77, the magazine transfer jig 152 and the fixing jig 160 are moved based on the correction movement amount (step P27). Thus, the magazine 151 can be transferred to a position where the wiring board 11 can be reliably supplied from the magazine 151 to the transport rail 150 with high positional accuracy. That is, according to the tenth embodiment, the wiring board 11 can be supplied from the magazine 151 to the transport rail 150 without being damaged.

  After the wiring board 11 is taken out from the magazine 151, for example, after being transported to a position (chip mounting position) where the chip 1C is mounted according to the transport rail 150, the wiring board 11 described in the first to ninth embodiments. After the mounting process (first process) of the chip 1C or the second chip 14 on the upper side is performed, the chip 1C is accommodated in the original magazine 151 or another magazine 151 again. When the mounting process of the chip 1C and the second chip 14 is completed at the time when the wiring board 11 is taken out from the magazine 151, the connection process of the Au wire 15 described in the first to ninth embodiments (the first process) Or the sealing step (first step) with the mold resin 17 and the like, and then the original magazine 151 or another magazine 151 is accommodated again. When the wiring substrate 11 is removed from the magazine 151 and the sealing process with the mold resin 17 is completed, a step of cutting the wiring substrate 11 to form a semiconductor package may be performed.

(Embodiment 11)
In the eleventh embodiment, the magazine transfer jig 152 for matching the center position in the Y direction of the transport rail 150 described in the tenth embodiment with the center position in the Y direction of the magazine 151 after the inclination correction. The movement of the fixing jig 160 is performed every time one wiring board 11 is taken out from the magazine 151.

  The width of the magazine 151 varies for each stage in which a plurality of wiring boards 11 are accommodated. 78, the dimension of the magazine 151 is measured for each stage in which the plurality of wiring boards 11 are accommodated, and the magazine 151 is attached to the wiring board 11 in consideration of the variation in the width of the magazine 151 for each stage. It is the flowchart which showed the process until it moves to a supply position.

  First, one wiring board (first mounting board) 11 is supplied from the magazine 151 to the transport rail 150 or returns from the transport rail 150 to the magazine 151 (process P28). Next, the magazine transfer jig 152 is raised or lowered to a height at which the next-stage wiring board (second mounting board) 11 can be supplied from the magazine 151 to the transport rail 150 (process P29).

  Next, the drive mechanism 155 is driven, and the pressing jig 153 is pressed against the side surface of the magazine 151 held by the magazine transfer jig 152. Thereby, at the supply position (hereinafter referred to as the next-stage supply position) of the next-stage wiring board 11 to the transport rail 150, the coordinates in the Y direction of the side surface of the magazine 151 (hereinafter referred to as the sixth Y-coordinate). ) Can be obtained.

  Subsequently, from the first Y coordinate, the second Y-direction movement amount, and the sixth Y coordinate described in the tenth embodiment, the width (first) of the magazine 151 at the next stage supply position (first accommodation position). 2) (process P30). That is, the absolute value of the numerical value obtained from the first Y coordinate + the second movement amount in the Y direction−the sixth Y coordinate is the width of the magazine 151 at the next stage supply position. Next, the transport rail 150 is calculated from the center coordinates of the transport rail 151 in the Y direction recorded in the data storage mechanism 156 in advance, the width of the magazine 151 at the next stage supply position, and the coordinates of the back plate 162 (fourth Y coordinate). The movement amount (second difference) of the magazine transfer jig 152 and the fixing jig 160 for matching the center position in the Y direction with the center position in the Y direction of the magazine 151 at the next stage supply position is obtained (second difference). Step P31). Next, the drive mechanism 155 is driven to return the pressing jig 153 to the original position.

  Next, the magazine transfer jig 152 and the fixing jig 160 are moved based on the movement amounts of the magazine transfer jig 152 and the fixing jig 160 obtained in the process P31 (process P32). Thus, the magazine 151 can be transferred to a position where the next-stage wiring board 11 can be reliably supplied from the magazine 151 to the transport rail 150 with high positional accuracy. By performing such steps P28 to P32 every time one wiring board 11 is taken out from the magazine 151, the magazine 151 is transferred to the transport rail 150 without damaging the wiring board 11 in each stage accommodated in the magazine 151. It becomes possible to supply.

  According to the eleventh embodiment as described above, the same effect as in the tenth embodiment can be obtained.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above embodiment, the case where the chip is mounted on the wiring board has been described, but the chip may be mounted on a metal frame such as copper.

  The method for manufacturing a semiconductor device of the present invention is a method of dicing a semiconductor wafer attached to an adhesive tape to divide the semiconductor wafer into a plurality of semiconductor chips, then peeling each semiconductor chip from the adhesive tape and mounting it on a mounting area such as a wiring board. The present invention can be widely applied to a manufacturing process of a semiconductor device having a process for performing the above process.

1C chip 1CA chip formation area (chip area)
1W Wafer 3 Back grinding tape 4 Dicing tape (adhesive tape)
5 Wafer ring 6 Dicing blade 7 Holding plate 8 Expanding ring 10 DAF
11 Wiring board (Mounting board, 1st mounting board, 2nd mounting board)
12 Au wire 13 Electrode 14 Second chip 15 Au wire 16 Electrode 17 Mold resin 18 Stacked package 100 Chip peeling device 101 Stage 102 Suction piece 103 Suction port 104 Groove 105 Suction collet 105A Inclination adjusting mechanism (head part)
105B Receiving seat (first receiving seat)
105C Magnet (first magnet)
105D Tilt adjustment mechanism (first magnetic part)
105E Receiving seat (second receiving seat)
105F magnet (second magnet)
105G Collet holder 105H Groove 106 Suction port 107 Bonding head 110A First block 110B Second block 110C Third block 111A First compression coil spring 111B Second compression coil spring 112 Pusher 121 Piping (first vacuum supply system)
122 piping (second vacuum supply system, first air supply system)
123, 124 Valve 131 Push-up pin (push-up jig)
132 Horn (push-up jig)
132B Lower member (second member)
132H Horizontal hole (void)
132S gap 132T tip member (first member)
150 Transport rail (transport track)
151 magazine (holding jig)
152 Magazine transfer jig 153 Holding jig 154 Linear guide 155 Drive mechanism 156 Data storage mechanism 157 Stage 158 Fixing jig 159 Top plate 160 Fixing jig 161 Connecting member 162 Back plate 163 Lower holding jig KBS Bonding stage (first stage) Bonding stage)
KH void (bubble)
P1-P15 Process P21-P32 Process TK Protrusion (Pressure jig)

Claims (6)

A semiconductor device manufacturing method including the following steps:
(A) A semiconductor wafer in which a main surface is divided into a plurality of chip regions by divided regions, an integrated circuit is formed in each of the chip regions, DAF is attached to the back surface, and an adhesive tape is further attached to the DAF. The process to prepare,
(B) cutting the semiconductor wafer and the DAF along the divided region to divide the semiconductor wafer into a plurality of semiconductor chips, and holding the plurality of semiconductor chips with the adhesive tape;
(C) among the plurality of semiconductor chips held by the adhesive tape, by adsorbing and holding the upper surface of the semi-conductor chip that Do and be stripped from the adhesive tape in the first suction force in the suction collet, attached on the lower surface of the front Symbol semiconductors chips, by applying vibration to the DAF which is sectioned, peeling off from the adhesive tape and said DAF to said being a semiconductor chip and diced together,
; (D) (c) after the step, prior Symbol while adsorption and held by the first suction force smaller than the first suction force the upper surface at the suction collet semi conductor chips, the lower surface of the front Symbol semiconductors chips Is die-bonded to the chip mounting region through the DAF separated into pieces .
Here, the first suction force, the pre-Symbol semiconductors chips, a suction force which can be peeled from the adhesive tape together with the DAF which is sectioned,
The second suction force, the first smaller than the suction force, Ri before Symbol attraction der not to drop the semi conductor chip from the suction collet,
The transmission of the vibration at the central portion of the semiconductor chip and the transmission of the vibration at the peripheral portion of the semiconductor chip are controlled, and the vibration at the central portion is transmitted more than the vibration at the peripheral portion. It is hard to do. In the manufacturing method of the semiconductor device according to claim 1,
The suction collet is connected to a first vacuum supply system that supplies the first suction force and a second vacuum supply system that supplies the second suction force;
In the step (c), the first suction force is supplied to the suction collet by opening the first vacuum supply system and closing the second vacuum supply system,
In the step (d), the second suction force is supplied to the suction collet by closing the first vacuum supply system and opening the second vacuum supply system. In the manufacturing method of the semiconductor device according to claim 1,
The suction collet is connected to a first vacuum supply system and a first air supply system that supply the first suction force and the second suction force;
In the step (c), the first suction force is supplied to the suction collet by opening the first vacuum supply system and closing the first air supply system,
In the step (d), the second suction force is supplied to the suction collet by opening the first vacuum supply system and the first air supply system. In the manufacturing method of the semiconductor device according to claim 1,
Thickness before Symbol semiconductors chips is 100μm or less. In the manufacturing method of the semiconductor device according to claim 4,
The second suction force is 10 kPa or less. In the manufacturing method of the semiconductor device according to claim 4,
The chip mounting area is disposed on the main surface of the mounting substrate or another semiconductor chip mounted on the main surface of the mounting substrate.

Images