TW201742179A - Bonding device and bonding method - Google Patents

Abstract

For at least one substrate (80) that is transported from a substrate accommodating body (90) of a loader part (40) to a transport lane (30), a bonding control unit (60) of this bonding device (1) (i) dispatches the substrate (80) to a substrate accommodating body (90) of an unloader part (50) as a die-mounted substrate in the event that bonding of all dies (72) to the substrate (80) by a bonding head (20a, 20b) has been completed, and (ii) returns the substrate (80) to the substrate accommodating body (90) of the loader part (40) as a substrate for die mounting in the event that bonding of all dies (72) to the substrate (80) by the bonding head (20a, 20b) has not been completed. This makes it possible to bond dies to a substrate by individual grade in an efficient manner using a simple mechanism.

Description

Bonding device and joining method

The present invention relates to a joining device and a joining method.

In a bonding apparatus in which a plurality of crystal grains included in a wafer are bonded to a substrate, a die picked up from a wafer held by the wafer holding portion is bonded to the substrate by a bonding head. The plurality of crystal grains included in the wafer are classified into a plurality of levels, and a plurality of crystal grains belonging to the same level are bonded to one substrate. For example, Patent Document 1 discloses a technique in which all of the plurality of dies having a plurality of levels on the wafer are bonded to the corresponding substrate without removing the wafer from the wafer holding portion.

However, according to the configuration disclosed in Patent Document 1, when the two levels of the dies are bonded to the corresponding substrates in a single transfer path, the positions of the substrate supply unit and the substrate carry-out unit are not unified. This makes it impossible to perform the joining of each level simply and efficiently. On the other hand, if two types of crystal grains are processed by using two transfer channels and two bonding heads, there is a concern that the bonding apparatus is relatively large compared to the number of levels processed.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-65711

The present invention has been made in view of such circumstances, and an object thereof is to provide a bonding apparatus and a bonding method capable of efficiently bonding a die to a substrate in a hierarchical unit by a simple mechanism.

A bonding apparatus according to an aspect of the present invention includes: a wafer holding portion that holds a wafer having a plurality of dies that are divided into a plurality of levels; and a bonding head that bonds the die transferred from the wafer holding portion to a substrate; a transfer path for transporting the substrate to be joined by the bonding head; a loading portion provided at one end of the transfer path; an unloading portion provided at the other end of the transfer path; and a joint control portion based on the Each level of the wafer classifies the data of the die classification, and the die of the wafer is bonded to the substrate corresponding to the level of the die; and the loading portion and the unloading portion respectively accommodate the plurality of substrate housings, the plurality of substrates Each of the plurality of substrates of the same level is accommodated in the plurality of substrates, and the plurality of substrates are bonded to the plurality of substrates of the same level, and the bonding control unit transports the substrate from the substrate of the loading unit to at least one of the substrates. i) when the bonding of all the crystal grains to the substrate is completed by the bonding head, the substrate is transferred to the substrate housing of the mounted die substrate to the unloading portion, and (ii) When the bonding of all the crystal grains to the substrate is not performed by the bonding head, the substrate is returned to the substrate housing of the mounting portion as the unmounted die substrate.

According to the above configuration, the joint control unit is configured as follows: for self loading When the substrate storage unit of the unit is transported to at least one of the substrates of the transport path, and when all the crystal grains are bonded to the substrate by the bonding head, the substrate is transported to the substrate storage body of the unloaded portion by the mounted die substrate. On the other hand, when the bonding of all the crystal grains to the substrate is not performed by the bonding head, the substrate is returned to the substrate housing of the mounting portion without the die substrate. Therefore, the unmounted die substrate and the mounted die substrate can be uniformly processed, and the die can be bonded to the substrate in a hierarchical unit with high efficiency by a simple mechanism.

In the above bonding apparatus, the bonding head may bond the die transferred from the wafer holding portion to the substrate or be bonded to the die of the substrate.

In the above bonding apparatus, the bonding head may include a first bonding head and a second bonding head disposed on the unloading portion side of the first bonding head, and the bonding control portion may be adjacent to the first bonding die. Each performs (i) or (ii).

In the above-described bonding apparatus, the bonding control unit may preferentially perform (i) on the second bonding head disposed on the unloading unit side.

In the above-described bonding apparatus, the bonding control unit may perform the plurality of substrates of the same level from the substrate housing of the loading unit to the transport path by the first and second bonding heads based on the mapping information. i) or (ii).

In the above-described bonding apparatus, the bonding control unit may transfer the substrate housings from the loading unit to the transport path by a plurality of levels which are different from each other by the first and second bonding heads based on the mapping information. The substrate is subjected to (i) or (ii).

In the above bonding apparatus, the mapping information may include information for classifying each of the crystal grains of the wafer into the first or second level.

In the above bonding device, the bonding control unit may be held in the wafer protection (i) or (ii) is performed on the first level of the wafer of the holding portion, and then (i) or (ii) is performed on the second level of the wafer held in the wafer holding portion.

In the above bonding apparatus, the loading unit or the unloading unit may have a plurality of platforms having different levels, and the plurality of platforms include: a first platform that houses the substrate housing belonging to the first level; and a second platform that accommodates It belongs to the second level substrate holder.

In the above bonding apparatus, the loading unit or the unloading unit may be configured to access or unload the substrate housing by accessing an automatic conveying mechanism that travels along a specific passage in the manufacturing apparatus.

In the above bonding apparatus, the wafer mounting unit that accommodates a plurality of wafers may be further included, and the bonding control unit may perform bonding of all the wafers to be bonded in the wafer held in the wafer holding portion. The wafer is transferred back to the wafer loading unit as a processed wafer, and another wafer is transferred from the wafer loading unit to the wafer holding unit.

In the above joining device, the conveying passage may be a single passage.

In one aspect of the present invention, a bonding apparatus is used. The bonding apparatus includes a wafer holding portion that holds a wafer having a plurality of dies divided into a plurality of levels, and a bonding head that is self-contained a die transported by the wafer holding unit is bonded to the substrate; a transfer path for transporting the substrate to be joined by the bonding head; a loading portion provided at one end of the transfer path; and an unloading portion provided at the other end of the transfer path; And a bonding control unit that bonds the die of the wafer to a substrate corresponding to the level of the die based on mapping information for classifying the die for each level of the wafer; and the loading portion and the unloading portion respectively A plurality of substrate housings are housed, and a plurality of substrate housings respectively accommodate a plurality of substrates of the same level, and a plurality of substrates are respectively bonded to a plurality of crystal grains belonging to the same level, and the bonding method is performed on the substrate housing body from the loading unit. At least one substrate sent to the transfer path, (i) when the bonding of all the crystal grains to the substrate is completed by the bonding head, the substrate is transferred to the substrate storage body of the mounted die substrate to the unloading portion, and (ii) When the bonding of all the crystal grains to the substrate is not performed by the bonding head, the substrate is returned to the substrate housing of the mounting portion as the unmounted die substrate.

According to the above configuration, when at least one of the substrates transported from the substrate storage body of the loading unit to the transfer path is bonded to the substrate by the bonding head, the substrate is transferred as the mounted die substrate to the substrate. In the case of the substrate storage body of the unloading portion, when the bonding of all the crystal grains to the substrate is not performed by the bonding head, the substrate is returned to the substrate storage body of the mounting portion without the die substrate. Therefore, the unmounted die substrate and the mounted die substrate can be uniformly processed, and the die can be bonded to the substrate in a hierarchical unit with high efficiency by a simple mechanism.

According to the present invention, it is possible to provide a bonding apparatus and a bonding method capable of efficiently bonding a die to a substrate in a hierarchical unit by a simple mechanism.

1‧‧‧Joining device

10‧‧‧ Wafer Loading Department

12‧‧‧ Wafer Holder

14‧‧‧ picking tools

16‧‧‧Intermediate stage

17‧‧‧ channel

18‧‧‧Automatic transport mechanism

20a‧‧‧1st joint head

20b‧‧‧2nd joint head

21‧‧‧Z-axis drive mechanism

22‧‧‧ Bonding tools

24‧‧ ‧Photography Department

26‧‧‧XY stage

30‧‧‧Transportation channel

40‧‧‧Loading Department

42‧‧‧Draining platform

44‧‧‧1st platform

46‧‧‧2nd platform

50‧‧‧Unloading Department

52‧‧‧Draining platform

54‧‧‧1st platform

56‧‧‧2nd platform

60‧‧‧Join Control Department

70‧‧‧ wafer

72‧‧‧ grain

74‧‧‧Grain (Level 1)

76‧‧‧Grain (Level 2)

80‧‧‧Substrate

84‧‧‧Substrate (Level 1)

86‧‧‧Substrate (Level 2)

90‧‧‧Substrate container

94‧‧‧Substrate container (level 1)

96‧‧‧Substrate container (Level 2)

Fig. 1 is a plan view showing a bonding apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a joining device according to an embodiment of the present invention.

Fig. 3 is a schematic view showing a joining device according to an embodiment of the present invention as seen from the Y-axis direction.

Fig. 4 is a schematic view of the joining device according to the embodiment of the present invention as seen in the X-axis direction.

Fig. 5 is a flow chart showing a joining method according to an embodiment of the present invention.

Fig. 6 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 7 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 8 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 9 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 10 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 11 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 12 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 13 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 14 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 15 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 16 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 17 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 18 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 19 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 20 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 21 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 22 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 23 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 24 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 25 is a view showing a first embodiment of a joining method according to an embodiment of the present invention.

Fig. 26 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 27 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 28 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 29 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 30 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 31 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 32 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Fig. 33 is a view showing a second embodiment of the joining method according to the embodiment of the present invention.

Embodiments of the present invention will be described below. In the description of the following drawings, the same or similar components are denoted by the same or similar symbols. The drawings are exemplified, and the size or shape of each part is schematic, and the technical scope of the invention is not limited to the embodiment.

The bonding apparatus of this embodiment will be described with reference to Figs. 1 to 4 . Fig. 1 is a plan view schematically showing a joining device 1 of the present embodiment. Fig. 2 is a cross-sectional view showing the joining device 1 focusing on the conveying path of the crystal grains of the wafer. 3 and 4 are views showing a part of the joining device 1.

As shown in FIG. 1, the bonding apparatus 1 of the present embodiment includes a wafer loading unit 10, a wafer holding unit 12, first and second bonding heads 20a and 20b, a transfer path 30, and loading at one end of the transfer path 30. The portion 40, the unloading portion 50 provided at the other end of the conveying path 30, and the jointing control portion 60 (see Fig. 2) for controlling the joining operation. In the following description, a direction parallel to the surface to be joined is referred to as an XY axis direction, and a direction perpendicular to the surface to be joined is referred to as a Z axis direction.

The bonding apparatus 1 is a semiconductor manufacturing apparatus for bonding the die 72 of the wafer 70 to the substrate 80. The die 72 has a front surface on which an integrated circuit pattern is formed and a back surface opposite to the front surface. The bonding apparatus 1 described below bonds the die 72 to the substrate 80 such that the back surface of the die 72 faces the substrate 80. . Such a joining device 1 is referred to as a die bonding device.

The plurality of dies 72 included in the wafer 70 are generally classified into a plurality of levels, and the dies 72 are bonded to the substrate 80 in units of rank. A plurality of crystal grains 72 are bonded to the substrate 80.

Specifically, the substrate 80 includes a plurality of die bonding regions for bonding a plurality of crystal grains 72. It is also possible to bond at least one or more of the crystal grains 72 in each of the die bonding regions. That is, another die 72 can be bonded to the bonded die 72 of one of the die bond regions of the substrate 80. A plurality of dies 72 of the same grade are bonded to one substrate 80.

In the present embodiment, the wafer 70 includes at least one die 74 belonging to the first level and at least one die 76 belonging to the second level (for example, a level having a characteristic lower than the first level). The ratio of each of the first and second grades in the wafer 70 is not particularly limited, and may be, for example, a ratio in which the first grade is more than half of the second grade. In the example shown in FIG. 1, the ratio of the crystal grains 74 belonging to the first level to the crystal grains 76 belonging to the second level is 3:1. Furthermore, the classification of the grades can be determined depending on whether or not specific characteristic conditions such as electrical characteristics are satisfied.

The wafer loading unit 10 (for example, a wafer cassette) is configured to accommodate a plurality of wafers 70. The wafer loading unit 10 supports, for example, each wafer 70 in parallel with the XY-axis direction, and stacks a plurality of wafers 70 in the Z-axis direction. Further, the wafer loading unit 10 houses the wafer 70 having a plurality of dies which have been subjected to the dicing step and separated into a plurality of individual sheets.

The wafer holding unit 12 is configured to hold the wafer 70 transferred from the wafer loading unit 10 by a wafer transfer tool (not shown). The wafer holding portion 12 is sucked by, for example, vacuum Wafer 70 is attached or wafer 70 is attached to the film to hold a plurality of dies 72.

The respective crystal grains 72 of the wafer 70 held by the wafer holding portion 12 can be temporarily transferred to the intermediate stage 16 by the pickup tool 14 to be bonded to the substrate 80 (see FIG. 2). In this case, for example, the die 72 is ejected through the film from below the wafer holding portion 12, and the die 72 is adsorbed from the upper die by the pick-up tool 14 to transfer the die 72 to the intermediate stage. 16. Alternatively, instead of ejecting the die 72, the peripheral region of the die 72 to be transferred in the wafer holding portion 12 may be moved downward.

The intermediate stage 14 can hold the die 72 by the same holding means as the wafer holding portion 12. Further, the wafer holding unit 12, the pick-up tool 14, and the intermediate stage 16 may be configured to be movable at least in the XY-axis direction by a driving mechanism such as a linear motor (not shown).

The bonding apparatus 1 of the present embodiment includes the first and second bonding heads 20a and 20b as a plurality of bonding heads. Bonding with respect to a plurality of substrates can be simultaneously performed by providing a plurality of bonding heads.

The first and second bonding heads 20a and 20b are bonded to the substrate 80 by the die 72 that is picked up from the wafer holding unit 12 and transported to the intermediate stage 14. As shown in FIG. 1 , the first bonding head 20 a is disposed on the side of the loading unit 40 in the direction of the conveying path 30 , and the second bonding head 20 b is disposed on the side of the unloading unit 50 in the direction of the conveying path 30 . The first and second bonding heads 20a and 20b may have the same configuration.

When the first bonding head 20a is described as an example with reference to FIG. 2, the bonding tool 22 is attached to the first bonding head 20a via the Z-axis driving mechanism 21, and the bonding tool 22 is separated by a specific distance. The imaging unit 24 is attached to the position. The first bonding head 20a can be moved in the XY-axis direction by the XY stage 26, whereby the bonding tool 22 and the imaging unit 24 are one. The faces move along the XY axis while maintaining a specific distance from each other.

In the example shown in FIG. 2, the bonding tool 22 and the imaging unit 24 are both fixed to the bonding head 20a. However, the imaging unit 24 may not necessarily be fixed to the bonding head 20a, and may be capable of being It moves independently of the bonding tool 22.

The bonding tool 22 is, for example, a suction nozzle that adsorbs and holds the die 72. Such a nozzle is formed in a rectangular parallelepiped shape or a truncated cone shape, and is configured to be held in contact with the outer edge of the die 72 from the front side of the die 72 in which the integrated circuit pattern is formed. The nozzle of the bonding tool 22 has a central axis parallel to the Z-axis direction, and is movable in the Z-axis direction and the XY-axis direction by the Z-axis driving mechanism 21 and the XY stage 26, respectively.

The bonding tool 22 is attached to the bonding head 22a via a θ-axis driving mechanism and a tilt driving mechanism (not shown), and is rotatable about the Z-axis and in the oblique direction (oblique direction) by the driving mechanisms. With such a configuration, the bonding tool 22 can pick up the die 72 disposed on the intermediate stage 16 and transport the picked-up die 72 from the intermediate stage 14 to the transfer tool 30, thereby The back surface opposite to the front surface is bonded to the substrate 80 in the direction opposite to the substrate 80.

The means for picking up the die 72 from the intermediate stage 16 by the bonding tool 22 may be the same as the means of picking up the die 72 from the wafer holding portion 12.

The imaging unit 24 acquires image information of the crystal grains 72 disposed on the intermediate stage 16. The imaging unit 24 is configured to have an optical axis parallel to the Z-axis direction and to photograph the working surface of the intermediate stage 16. The imaging unit 24 is movable in the XY-axis direction. For example, before the die 72 is picked up by the bonding tool 22, it is moved above the intermediate stage 16 to obtain the die 72 on the intermediate stage 16 (the integrated circuit pattern is formed). Image of the front side). The die 72 can be accurately picked up and transported by the bonding tool 22 based on the image information acquired by the imaging unit 24.

The configuration of the first bonding head 20a described above may be the same as that of the second bonding head 20b.

Returning to Fig. 1, the transport path 30 is configured such that the transport substrate 80 is joined by the first and second bonding heads 20a and 20b. The transfer path 30 may also be a single channel for transporting the substrates 80 one by one in a single direction. In the example shown in FIG. 1, the transport path 30 is for transporting the substrate 80 in the X-axis direction.

The conveyance path 30 has a region 30a for joining the first bonding heads 20a and a region 30b for bonding the second bonding heads 20b. At least one substrate 80 is transferred to each of the regions (in the example shown in Fig. 1, one substrate 80 is transferred to each region).

Each of the loading unit 40 and the unloading unit 50 is configured to accommodate a plurality of substrate housings 90 (for example, a cassette). Each of the substrate housings 90 is configured to accommodate a plurality of substrates 80. The substrate housing 90 supports, for example, each of the substrates 80 in parallel with the XY-axis direction, and stacks a plurality of substrates 80 in the Z-axis direction. A plurality of substrates 80 belonging to the same level are housed in one substrate housing 90.

The substrate holder 90 in which the plurality of substrates 80 to be joined thereafter are accommodated is mounted on the loading unit 40, and the substrate housing body in which the plurality of substrates 80 that have been joined are stored is unloaded in the unloading unit 50. In the bonding apparatus of the present embodiment, the mounting unit 40 and the unloading unit 50 can be configured to be substantially the same.

Hereinafter, for convenience of explanation, the substrate to which the die 74 of the first class is bonded and the substrate storage body to be housed are the substrate 84 and the substrate storage body 94, and the substrate of the second-order die 76 and the substrate are bonded. The substrate housing body that accommodates the substrate is a substrate 86 and a substrate housing 96. Further, regarding the crystal grains, the substrate, and the substrate housing, the crystal grains 72 are collectively referred to as an unrestricted level. The substrate 80 and the substrate housing 90.

The loading unit 40 and the unloading unit 50 will be further described with reference to FIGS. 3 and 4 . 3 is a schematic view when the bonding apparatus 1 is viewed from the Y-axis direction, and FIG. 4 is a schematic view when the bonding apparatus 1 is viewed from the X-axis direction.

As shown in FIG. 3, the loading unit 40 or the unloading unit 50 is configured to access or unload the substrate housing 90 by accessing the automatic conveying mechanism 18 that travels along the specific passage 17 in the manufacturing apparatus. The automatic transport mechanism 18 is, for example, an OHT (Overhead Hoist Transfer). The OHT is provided with a lifting mechanism that travels on a rail (channel 17) provided on a patio of the manufacturing equipment and moves up and down by belt driving, whereby the loading unit 40 or the unloading unit 50 can be directly stored without a human hand. The substrate holder 90 is taken up, loaded or unloaded.

As shown in FIGS. 3 and 4, the loading unit 40 has a plurality of stages having different levels in the Z-axis direction. For example, the loading unit 40 includes a discharge stage 42 that discharges the substrate housings 94 and 96 belonging to the first level and the second level, a first stage 44 that houses the substrate housing 94 belonging to the first level, and a second platform. 46. The substrate housing 96 belonging to the second level is housed. One or more substrate housings 90 are housed in the platforms.

As shown in FIG. 4, the substrate transport bodies 94 and 96 transported by the automatic transport mechanism 18 can be respectively assigned to the corresponding first stage 44 or second stage 46 by the automatic transfer mechanism 18 moving up and down in the Z-axis direction. The loading unit 40 can move the substrate housing 90 up and down in the Z-axis direction on the side opposite to the side accessed by the automatic conveying mechanism 18 (the side opposite to the Y-axis direction in the example shown in FIG. 4). The substrate housing 90 is transferred to each of a plurality of stages (the uppermost layer, the intermediate layer, and the lowermost layer) of the plurality of platforms.

In the present embodiment, the conveyance path 30 is located in the same level (intermediate layer) as the first stage 44 in the Z-axis direction, and the substrate storage body 90 is moved to the same intermediate layer as the first stage 44, thereby making it possible to perform relative The transfer of the substrate 80 to the transfer channel 30.

Referring to the loading unit 40 in more detail, in the example shown in Fig. 1, the discharge platform 42 has regions 42b and 42c, the first platform 44 has regions 44b and 44c, and the second platform 46 has regions 46b and 46c for each region. A substrate housing 90 is housed. The substrate housing 90 supplied to the loading unit by the automatic conveying mechanism 18 is distributed to the first stage 44 or the second stage 46 via a region 44a or a region 46a located in a different level in the Z-axis direction.

The substrate housing 90 of each of the stages can be moved to the regions 42d, 44d, and 46d which are located at different levels in the Z-axis direction, and can be made to the substrate of the conveying path 30 via the region 44d which is the same level as the first stage 44. The handover of 80.

The unloading unit 50 may have the same configuration as that of the loading unit 40. For example, the unloading unit 50 includes a discharge stage 52 that discharges the substrate housings 94 and 96 belonging to the first and second levels, a first stage 54 that houses the substrate housing 94 belonging to the first level, and a second stage 56. It accommodates the substrate housing 96 belonging to the second level. One or more substrate housings 90 are housed in the platforms. The description of the loading unit 40 applies to the distribution of the substrate housing 90 conveyed by the automatic conveying mechanism 18, the conveyance of the substrate housing 90 between the platforms, and the transfer to the substrate 80 of the conveying path 30.

Referring to the unloading unit 50 in more detail, in the example shown in Fig. 1, the discharge platform 52 has regions 52b, 52c, the first platform 54 has regions 54b, 54c, and the second platform 56 has regions 56b, 56c for each region. A substrate housing 90 is housed. The substrate housing 90 supplied to the unloading unit by the automatic conveying mechanism 18 is located at a different level along the Z-axis direction. The area 54a or the area 56a is distributed to the first stage 54 or the second stage 56.

The substrate housing 90 of each of the stages can be moved to the regions 52d, 54d, and 56d which are located at different levels in the Z-axis direction, and can be made to the substrate of the transport path 30 via the region 54d which is the same level as the first stage 54. The handover of 80.

As shown in FIG. 2, the engagement control unit 60 controls the processing necessary for the engagement by the bonding apparatus 1. The bonding control unit 60 includes a process of controlling the bonding process by the first and second bonding pads 20a and 20b, the replacement process of the wafer 70 held by the wafer holding unit 12, and the die 72, the substrate 80, and the substrate. The handling of the container 90 is carried out. The engagement control unit 60 can control the operation of the respective configurations by connecting signals to and from the respective configurations of the bonding apparatus 1 in the range required for the processing.

In the present embodiment, the joint control unit 60 controls the processing necessary for the joint based on the map information stored in the storage unit 62. The mapping information is information relating to the level of each of the dies 72 of the illustrated wafer 70.

The bonding control unit 60 is configured such that when at least one of the substrates 80 that have been transported to the transport path is joined to the substrate 80 by the first and second bonding heads 20a and 20b, The substrate 80 is transported to the substrate housing 90 of the unloading unit 50 as a mounted die substrate.

On the other hand, the bonding control unit 60 is configured to use the substrate 80 as an unmounted crystal when the bonding of all the crystal grains 72 to the substrate 80 is not performed by the first and second bonding heads 20a and 20b. The granular substrate is moved back to the substrate housing 80 of the loading unit 40. Furthermore, the details of this control will be described in the following joining method.

Further, the engagement control unit 60 is connected to an operation unit for inputting control information. (not shown) and a display unit (not shown) for outputting control information, whereby the operator can recognize the screen by the display unit and input necessary control information by the operation unit.

In addition, the connection control unit 60 includes a computer device such as a CPU (Central Processing Unit) and a memory, and stores a bonding program or the like for processing required for bonding in the memory (memory unit 62). Required information (including the above mapping information). The engagement control unit 60 is configured to perform various steps related to the bonding method described below (for example, a program for causing a computer to execute each step).

Next, the joining method of this embodiment will be described with reference to Fig. 5 . Fig. 5 is a flow chart for explaining the joining method of the embodiment. The bonding method of the present embodiment can be carried out using the bonding apparatus 1 described above.

First, the substrate housing 90 is supplied to the loading unit 40 and the unloading unit 50 (S10). Specifically, the substrate housing 90 in which the plurality of substrates 80 are housed is mounted on the loading unit 40 for bonding, and the empty substrate housing 90 is supplied to the unloading unit 50 to unload the plurality of substrates 80 that have been joined. The substrate housing 90 can be supplied to the loading unit 40 and the unloading unit 50 by the automatic conveying mechanism 18 .

Next, the substrate 80 is transferred from the substrate housing 90 of the loading unit 40 to the conveyance path 30 (S11). Specifically, the substrate housing 90 is moved to the region 44d, and at least one substrate 80 is transferred from the substrate housing 90 disposed in the region 44d to the conveyance path 30.

In the meantime, any one of the plurality of wafers 70 accommodated in the wafer loading unit 10 is taken out and held in the wafer holding unit 12 . As described above, the plurality of crystal grains 72 included in the wafer 70 are classified into a plurality of levels, and the classification of each level is stored as the mapping information in the memory unit 62 of the joint control unit 60. Therefore, the bonding control unit 60 reads the mapping information of the wafer 70 from the memory unit 62 for each of the wafers 70 held by the wafer holding unit 12, and Engagement control based on mapping information.

Next, a plurality of crystal grains 72 are bonded to the substrate 80 (S12). The bonding control unit 60 bonds a plurality of dies 72 of the corresponding level to the substrate 80 for each level of the substrate 80 that has been transferred to the transfer path 30 based on the mapping information. In this case, the plurality of substrates 80 that have been transported to the transport path 30 may be simultaneously joined by the first and second bonding heads 20a and 20b. The first and second bonding heads 20a and 20b may be joined simultaneously or sequentially.

The first and second bonding heads 20a and 20b may be joined to the same level in parallel, or may be joined to different levels in parallel. Specifically, the two substrates 84 belonging to the first level may be transported to the transport path 30, and the plurality of crystal grains 74 belonging to the first level may be bonded to the respective substrates by the first and second bonding heads 20a and 20b. A plurality of die bonding regions of 84.

Alternatively, each of the substrates 84 and 86 belonging to the first and second grades may be transported to the transport path 30, and one of the first and second bonding heads 20a and 20b may be a plurality of crystal grains belonging to the first level. 74 is bonded to a plurality of die bonding regions of the substrate 84, and the plurality of crystal grains 76 belonging to the second level are bonded to the plurality of crystals of the substrate 86 by the other of the first and second bonding pads 20a and 20b. Grain junction area. Further, as described above, a plurality of crystal grains 74 may be laminated and bonded to one die bonding region.

Then, when all the crystal grains 72 to be bonded to the substrate 80 have been joined, the substrate 80 is transported to the unloading portion 50 (S13 YES (YES) and S14). That is, when all of the plurality of die bonding regions of the substrate 80 are filled with the die 74, and the substrate 80 is judged to have the die substrate mounted thereon, the substrate 80 is housed in the substrate housing portion 54d disposed in the unloading portion 50. Body 90.

When the plurality of substrates 80 are simultaneously processed by the first and second bonding heads 20a and 20b, for example, the second bonding head 20b disposed on the unloading unit 50 side may be preferentially provided. The production of the mounted die substrate is performed.

On the other hand, when all the crystal grains 72 to be bonded to the substrate 80 are not joined, the substrate 80 is carried back to the loading unit 40 (S13 NO (No) and S15). That is, the plurality of die bonding regions of the substrate 80 are completely unbonded to the die 74 or only a portion of the plurality of die bonding regions are partially bonded with the die 74, so that there is room for bonding of the die 74, and the substrate 80 is When it is determined that the die substrate is not mounted, the substrate 80 is housed in the substrate housing 90 disposed in the region 44d of the mounting portion 40.

Finally, it is determined whether or not the other crystal grains 72 and the substrate 80 to be bonded are present (S16). When it is determined that there are other crystal grains 72 and the substrate 80 to be bonded, the process returns to step S11 (YES in S16).

At this time, when the bonding control unit 60 terminates the bonding of all the crystal grains 74 included in the wafer 70 held by the wafer holding unit 12, the wafer 70 is transferred back to the crystal as a processed wafer. The wafer loading unit 10 transfers the other wafer 70 from the wafer loading unit 10 to the wafer holding unit 12 . When it is determined that the bonding of all the crystal grains 72 of the plurality of wafers 70 accommodated in the wafer loading unit 10 is completed and there are no other crystal grains 72 and the substrate 80 to be bonded, the bonding of the present embodiment is terminated. Method (S16 NO).

As described above, according to the present embodiment, at least one of the substrates 80 transported to the transport path 30 from the substrate housing 90 of the loading unit 40 is completed by the first and second bonding heads 20a and 20b. When the die 72 is bonded to the substrate 80, the substrate 80 is transferred to the substrate housing 90 of the unloading unit 50 as the mounted die substrate, and the first and second bonding heads 20a are not used. When the bonding of all the crystal grains 72 to the substrate 80 is completed, the substrate 80 is carried back to the substrate housing 90 of the loading unit 40 as an unmounted die substrate.

Therefore, the unmounted die substrate and the mounted die substrate can be uniformly processed, and the die 72 can be bonded to the substrate 80 in a hierarchical unit with high efficiency by a simple mechanism.

Next, an embodiment in which the joining method of the joining device 1 of the present embodiment is used will be described. The following embodiments can be performed by the joint control unit 60 controlling the respective configurations of the joint device 1 based on the map information.

In the following embodiments, the case where the number of substrates that can be accommodated in the substrate housing is three will be described as an example. Further, the substrates 84a to 84i are substrates on which a plurality of crystal grains 74 belonging to the first level are bonded, and the substrates 86a to 86c are substrates on which a plurality of crystal grains 76 belonging to the second level are bonded.

(Example 1)

Embodiment 1 will be described with reference to Figs. 6 to 25 . In the present embodiment, a plurality of substrates belonging to the same level are transferred to the transfer path 30, and the first and second bonding heads 20a and 20b are bonded to the substrate by the same level of the crystal grains.

In the present embodiment, as shown in the respective drawings, in the step of one series of the first embodiment, the arrangement of the substrate housings in the loading unit 40 and the unloading unit 50 is the same. Further, in each of the loading unit 40 and the unloading unit 50, a plurality of substrate housings may be moved at the same time as long as the movement paths thereof do not overlap. This embodiment is divided into the following series of steps (1) to (4).

(1) First, a plurality of crystal grains 74 belonging to the first level in the first wafer 70 are bonded to the substrate 84, and the substrate 84 is housed in the substrate housing 94, with reference to FIGS. 6 to 11. The steps of one of the series.

First, as shown in FIG. 6, the substrate storage body 94 belonging to the first level is supplied to the loading unit 40 and the unloading unit 50 by the automatic transfer mechanism 18. Specifically, in the loading unit 40, The substrate housing 94 in which the plurality of substrates 84a, 84b, and 84c belonging to the first level are accommodated is supplied to the region 44a, and the empty substrate housing 94 is supplied to the region 54a in the unloading portion 50. In the meantime, in order to transport one of the plurality of wafers 70 accommodated in the wafer loading unit 10 to the wafer holding unit 12, it stands by. The wafer 70 includes a plurality of crystal grains 74 (12 in FIG. 6) belonging to the first level, and a plurality of crystal grains 76 (four in FIG. 6) belonging to the second level.

Next, as shown in FIG. 7, in the loading unit 40, the substrate housing 94 is moved to the region 44c via the region 44b on the first stage 44, and the substrate housing 94 is passed through the unloading portion 50. The area 54b on the first stage 54 moves to the area 54c.

At the same time, the substrate storage body 96 belonging to the second level is supplied to the loading unit 40 and the unloading unit 50 by the automatic transfer mechanism 18. Specifically, in the loading unit 40, the substrate housing 96 in which the plurality of substrates 86a, 86b, and 86c belonging to the second level are accommodated is supplied to the region 44a, and the empty substrate housing 96 is supplied to the unloading unit 50. To area 54a. Further, the wafer 70 is transferred from the wafer loading unit 10 to the wafer holding unit 12 simultaneously with the movement processing of the substrate housings.

Next, as shown in FIG. 8, in the loading unit 40, the substrate housing 94 is moved to the region 44d, and in the unloading portion 50, the substrate housing 94 is moved to the region 54d. Then, in the loading unit 40, the substrate 84a of the three substrates 84a to 84c housed in the substrate housing 94 is transported to the region 30a of the transport path 30, and the substrate 84b is transported to the region 30b of the transport path 30. Further, as shown in FIG. 8, a plurality of die bonding regions are provided on each of the substrates 84a and 84b (eight die bonding regions are provided in each substrate in FIG. 8).

In the meantime, in the loading unit 40, the substrate housing 96 is moved to the region 46b of the second stage 46 via the region 46a, and the substrate is placed in the unloading unit 50. The container 96 moves to the region 56b of the second stage 56 via the region 56a.

Next, as shown in FIG. 9, the plurality of crystal grains 74 belonging to the first level among the wafers 70 transferred from the wafer holding portion 12 are bonded to the substrate 84a conveyed to the region 30b by the second bonding head 20b. All die bond areas.

During this period, the substrate housing 96 is moved to the region 46c of the second stage 46 in the loading unit 40, and the substrate housing 96 is moved to the second platform 56 in the unloading unit 50. 56c. Further, the loading unit 40 and the unloading unit 50 are supplied with the subsequent substrate storage body 94 belonging to the first level by the automatic conveying mechanism 18. Specifically, in the loading unit 40, the subsequent substrate housing 94 in which a plurality of substrates 84d, 84e, and 84f belonging to the first level are accommodated is supplied to the region 44a, and in the unloading portion 50, the subsequent substrate is empty. The container 94 is supplied to the region 54a.

Thereafter, as shown in FIG. 10, the bonding of the wafers 74 belonging to the first level of the wafer 70 is continued. That is, the remaining plurality of crystal grains 74 belonging to the first level of the wafer 70 are bonded to the die bonding region of a portion of the substrate 84b in the region 30a by the first bonding head 20a. In this manner, all of the crystal grains 74 belonging to the first level among the wafers 70 on the wafer holding portion 12 are joined.

As a result, in the transfer path 30, the substrate 84a in which the die 74 is bonded to all of the plurality of die bonding regions, and the substrate 84b in which the bonding remains in one of the plurality of die bonding regions remains. Thereafter, the substrate 84a, which is the mounted substrate, is transferred from the region 30b to the unloading portion 50, and the substrate 84b, which is not mounted with the die substrate, is carried back from the region 30a to the loading portion 40. Further, during the bonding process, the subsequent substrate housing 94 is moved to the first land area 44b in the loading unit 40, and the subsequent substrate housing 94 is moved to the second loading unit 94 in the unloading unit 50. 1 platform area 54b.

As described above, as shown in FIG. 11, the substrate housing 94 in the region 54d of the unloading portion 50 accommodates the substrate 84a (the mounted substrate) to which the die 74 is bonded to all the die bonding regions, and on the mounting portion. The substrate housing 94 of the region 44 of 40 is accommodated in a portion of the die bonding region where the substrate 84b of the die 74 is bonded (the die substrate is not mounted).

While the substrates 84a and 84b are moved to the loading unit 40 or the unloading unit 50, the subsequent substrate housing 94 is moved to the region 44c of the first stage 44 in the loading unit 40, and in the unloading unit 50, The subsequent substrate housing 94 is moved to the region 54c of the first stage 54.

As described above, the plurality of crystal grains 74 belonging to the first level in the first wafer 70 can be bonded to the substrates 84a and 84b, and the substrates 84a and 84b can be accommodated in the substrate of the loading unit 40 or the unloading unit 50. Body 94.

(2) Next, a plurality of dies 76 belonging to the second level in the first wafer 70 are bonded to the substrate 86, and the substrate 86 is housed in the substrate housing 96, with reference to FIGS. 12 to 15. The steps of one of the series.

As shown in FIG. 12, in the loading unit 40, each of the substrate housings 94 is moved to the regions 44b and 44c of the first stage 44, and in the unloading unit 50, the substrate housings 94 are moved to the first position. Regions 54b, 54c of platform 54. In the meantime, the substrate housing 96 is moved to the region 46d in the loading unit 40, and the substrate housing 96 is moved to the region 56d in the unloading unit 50.

Then, as shown in FIG. 13, in the loading unit 40, the substrate housing 96 is moved to the region 44d, and in the unloading portion 50, the substrate housing 96 is moved to the region 54d. Then, in the loading unit 40, the three substrates 86a stored in the substrate housing 96 are placed. The substrate 86a in the 86c is transported to the region 30b of the transport path 30. Further, as shown in FIG. 13, a plurality of die bonding regions (eight die bonding regions in FIG. 13) are provided on the substrate 86a.

Next, as shown in FIG. 14, the plurality of crystal grains 76 belonging to the second level among the wafers 70 transferred from the wafer holding portion 12 are bonded to the substrate 86a conveyed to the region 30b by the second bonding head 20b. Part of the die bond area. In this manner, all of the crystal grains 76 belonging to the second level among the wafers 70 on the wafer holding portion 12 are joined. As a result, in the transfer path 30, there is a substrate 86a in which a portion of the plurality of die bonding regions remains to be left. Thereafter, the substrate 86a, which is no die substrate, is carried back from the region 30b to the loading portion 40.

As described above, as shown in FIG. 15, the substrate housing 96 in the region 44d of the loading unit 40 accommodates the substrate 86a (without the die substrate) to which the die 76 is bonded to a part of the die bonding region. In addition, in this period, the wafer 70 in which the respective wafers 74 and 76 of the first level and the second level are joined is used as the processed wafer, and is moved from the wafer holding unit 12 to the wafer loading unit 10.

As described above, the plurality of crystal grains 76 belonging to the second level in the first wafer 70 can be bonded to the substrates 86a and 86b, and the substrates 86a and 86b can be accommodated in the substrate housing 96 of the mounting unit 40.

(3) Further, a plurality of crystal grains 74 belonging to the first level in the subsequent wafer 70 are bonded to the substrate 84, and the substrate 84 is housed in the substrate housing 94, with reference to FIGS. 16 to 20 . A series of steps.

As shown in FIG. 16, in the loading unit 40, the substrate housing 96 is moved to the region 46c of the second stage 46 via the region 46d, and in the unloading unit 50, the substrate housing 96 is passed through the region 56d. Move to the area 56c of the second platform 56. Also, during this period, The subsequent wafer 70 is transferred from the wafer loading unit 10 to the wafer holding unit 12.

Next, as shown in FIG. 17, in the loading unit 40, the substrate housings 94 are moved to the regions 44c and 44d, and in the unloading unit 50, the substrate housings 94 are moved to the regions 54c and 54d. Then, in the loading unit 40, the substrate 84c is transferred from the substrate housing 94 of the region 54d to the region 30a of the conveying path 30, and the substrate 84b is conveyed to the region 30b of the conveying path 30. Further, as shown in FIG. 17, the crystal grains 74 are bonded to a portion of the die bonding region of the substrate 84b. Further, a plurality of die bonding regions (eight die bonding regions in FIG. 17) are provided on the substrate 84c.

As shown in FIG. 18, the plurality of crystal grains 74 belonging to the first level among the subsequent wafers 70 transferred from the wafer holding portion 12 are bonded to the substrate 84b transferred to the region 30b by the second bonding head 20b. The remaining portion of the die bond area. Thereafter, as shown in FIG. 19, the bonding of the wafers 74 belonging to the first level of the subsequent wafer 70 is continued.

That is, the remaining plurality of crystal grains 74 belonging to the first level of the subsequent wafer 70 are bonded to all the die bonding regions of the substrate 84c in the region 30a by the first bonding head 20a. In this manner, all of the wafers 74 belonging to the first level among the subsequent wafers 70 on the wafer holding portion 12 are joined.

As a result, in the transfer path 30, each of the plurality of die bonding regions is bonded to each of the substrates 84 and 84c of the die 74. Thereafter, the mounted substrates, that is, the respective substrates 84b and 84c, are transported from the transfer path 30 to the unloading unit 50.

As shown in FIG. 20, in the substrate housing 94 of the region 54d of the unloading portion 50, the substrates 84b and 84c (the mounted substrate) to which the crystal grains 74 are bonded to all the die bonding regions are additionally accommodated. As a result, the substrate housing 94 is filled with the substrates 84a to 84c which are the mounted substrates. It is in a state in which there is no room for the substrate.

As described above, the plurality of crystal grains 74 belonging to the first level in the subsequent wafer 70 can be bonded to the substrates 84b and 84c, and the substrates 84b and 84c can be accommodated in the substrate housing 94 of the unloading unit 50.

(4) Finally, referring to FIG. 21 to FIG. 25, a plurality of crystal grains 74 belonging to the second level in the subsequent wafer 70 are bonded to the substrate 86, and the substrate 86 is housed in the substrate housing 96. A series of steps.

As shown in FIG. 21, in the loading unit 40, the empty substrate housing 94 is moved to the region 42d, and in the unloading portion 50, the substrate receiving body is filled with the substrates 84a to 84c. 94 moves to area 52d. Further, the loading unit 40 and the unloading unit 50 are supplied with the subsequent substrate storage body 94 belonging to the first level by the automatic conveying mechanism 18. Specifically, in the loading unit 40, the subsequent substrate housing 94 in which a plurality of substrates 84g, 84h, and 84i belonging to the first level are accommodated is supplied to the region 44a, and in the unloading portion 50, the subsequent substrate is empty. The container 94 is supplied to the region 54a.

Next, as shown in FIG. 22, in the loading unit 40, the subsequent substrate housing 94 is moved to the region 44b of the first stage, and in the unloading unit 50, the subsequent substrate housing 94 is moved to the second portion. 1 platform area 54b. In the meantime, in the loading unit 40, the empty substrate housing 94 is moved to the region 42b via the region 42c on the discharge stage 42, and in the unloading portion 50, the substrate to be mounted is used. The substrate housing 94 filled with 84a to 84c is moved to the region 52b via the region 52c on the discharge stage 52. Thereafter, the substrate storage body 94 disposed on each of the discharge platforms 42 and 52 is discharged from the loading unit 40 and the unloading unit 50 by the automatic conveying mechanism 18.

In this manner, the substrates 84a to 84c to which the mounted substrates belonging to the first level of the crystal grains 74 are bonded can be unloaded from the unloading unit 50. At the same time, the empty substrate housing 94 can be recovered from the loading unit 40.

Next, as shown in FIG. 23, in the loading unit 40, the substrate housing 96 is moved to the region 44d via the region 46d, and in the unloading portion 50, the substrate housing 96 is moved to the region via the region 56d. 54d. Further, in the loading unit 40, the substrate 86a housed in the three substrates 86a to 86c of the substrate housing 96 is transported to the region 30b of the transport path 30. Further, as shown in FIG. 23, the crystal grains 76 are bonded to a portion of the die bonding region of the substrate 86a.

Next, as shown in FIG. 24, the plurality of crystal grains 76 belonging to the second level among the subsequent wafers 70 transferred from the wafer holding portion 12 are joined to the region 30b by the second bonding head 20b. A die bond region of the remaining portion of the substrate 86a.

In this manner, all of the crystal grains 76 belonging to the second level among the subsequent wafers 70 on the wafer holding portion 12 are joined. As a result, in the region 30b of the transfer path 30, the substrate 86a in which the die 76 is bonded to all of the plurality of die bonding regions is formed. Thereafter, the substrate 86a, which is the mounted substrate, is transported from the transfer path 30 to the unloading unit 50.

As described above, as shown in FIG. 25, the substrate housing 96 in the region 54d of the unloading portion 50 accommodates the substrate 86a (the mounted substrate) to which the die 76 is bonded to all the die bonding regions. In addition, in this period, the subsequent wafers 70 in which the respective wafers 74 and 76 of the first level and the second level are joined are used as processed wafers, and are moved from the wafer holding unit 12 to the wafer loading unit. 10.

As described above, the plurality of crystal grains 76 belonging to the second level in the subsequent wafer 70 can be bonded to the substrate 86a, and the substrate 86a can be accommodated in the substrate housing 96 of the unloading portion 50.

(Example 2)

The second embodiment will be described with reference to Figs. 26 to 33. In the present embodiment, a plurality of substrates belonging to different grades are transported to the transport path 30, and the first and second bonding heads 20a and 20b are bonded to the substrate by crystal grains of different grades. Further, in the second embodiment shown below, the steps up to one of the series shown in FIGS. 6 to 18 are the same as those described in the first embodiment.

As shown in FIG. 18, the substrate 84b in the region 30b of the transport path 30 is a mounted substrate, and the substrate 84c in the region 30a of the transport path 30 is in the case where the die substrate is not mounted, and the die substrate is not mounted. That is, the remaining number of the bonded die 74 belonging to the first level in the substrate 84c (eight in FIG. 18) exceeds the remaining number of the second-order die 76 in the wafer 70 (FIG. 18) In the case of four of them, it is preferable to carry out the processing of this embodiment. The switching of the first embodiment or the second embodiment is performed by the joint control unit 60 based on the map information.

By switching to the second embodiment based on the above-described conditions, the substrate 84c belonging to the first level can be set as the mounted substrate, and the substrate 86b belonging to the second level of different grades can be set as shown in FIG. The substrate is not installed. Therefore, the substrate 86b belonging to the second level can be transported to the loading unit 40 at the same time as the substrate 84c belonging to the first level, so that the substrates belonging to different grades can be prevented from remaining in the transport path 30. Retreat quickly. Thereby, it is possible to join the substrates belonging to different grades without lowering the processing efficiency.

When the procedure of one series of the second embodiment is specifically described, first, as shown in FIG. 26, the substrate 84b in which all of the plurality of die bonding regions are bonded with the die 74 is transported to the unloading portion 50 as the mounted substrate. . At the same time, the substrate 84c to which the die 74 belonging to the first level is to be bonded is moved from the region 30a to the region 30b.

Thus, as shown in FIG. 27, the substrate housing in the region 54d of the unloading portion 50 94. The substrate 84b (attached substrate) to which the crystal grains 74 are bonded to all the die bonding regions is additionally accommodated. As a result, the substrate housing 94 accommodates the substrates 84a and 84b which are mounted substrates. Further, the first bonding die 70 is bonded to the substrate 84c in the region 30b by the second bonding head 20b. Further, during this period, the substrate housings 94 are moved to the regions 44b and 44c in the loading unit 40.

Thereafter, as shown in FIG. 28, the bonding of the wafers 74 belonging to the first level of the wafer 70 is continued. That is, the plurality of crystal grains 74 belonging to the first level of the wafer 70 are bonded to the die bonding region of the substrate 84c in the region 30b by the second bonding head 20b. Moreover, in this period, in the loading unit 40, the substrate housing 96 is moved to the region 44d via the region 46.

Further, as shown in FIG. 29, the plurality of crystal grains 74 belonging to the first level of the wafer 70 are bonded to the die bonding region of the substrate 84c in the region 30b by the second bonding head 20b. In addition, in the loading unit 40, the substrate 86b accommodated in the three substrates 86a to 86c of the substrate housing 96 is transported to the region 30a of the transport path 30. Further, as shown in FIG. 29, a plurality of die bonding regions (eight die bonding regions in FIG. 29) are provided on the substrate 86b.

Thereafter, as shown in FIG. 30, the bonding by the second bonding head 20b is continued, and the plurality of crystal grains 74 belonging to the first level in the subsequent wafer 70 are bonded to all of the substrate 84c transferred to the region 30b. Grain bond area.

Further, simultaneously with the bonding of the first level by the second bonding head 20b, the plurality of crystal grains 76 belonging to the second level of the subsequent wafer 70 are bonded to the substrate in the region 30a by the first bonding head 20a. A die bond region of a portion of 84b. In this manner, all of the first and second grades of the crystal grains 74 and 76 among the subsequent wafers 70 on the wafer holding unit 12 are joined.

As a result, in the transfer channel 30, there are all of the plurality of die bonding regions. The substrate 84c to which the die 74 is bonded (the mounted substrate belonging to the first level) and the substrate 86b in which the bonding portion remains in one of the plurality of die bonding regions (the second-order unmounted die substrate) . Thereafter, the substrate 84c on which the die substrate is mounted is transported from the region 30b to the unloading portion 50, and the substrate 86b, which is not mounted with the die substrate, is carried back from the region 30a to the loading portion 40.

As shown in FIG. 31, the substrate housing 94 in the region 54d of the unloading portion 50 additionally accommodates the substrate 84c (the mounted substrate) to which the die 74 is bonded to all the die bonding regions, and In the substrate housing 96 of the region 44d of the loading unit 40, a substrate 86b (without the die substrate) to which the die 76 is bonded to a part of the die bonding region is additionally housed.

While the substrates 86b and 84c are moved to the loading unit 40 or the unloading unit 50, the wafers 70 in which the first and second grades of the respective crystal grains 74 and 76 are bonded are used as processed wafers. The circle holding portion 12 moves to the wafer loading portion 10.

Next, as shown in FIG. 32, in the loading unit 40, the substrate housing 96 is moved to the region 46c of the second stage 46 via the region 46d. Moreover, in this period, the subsequent wafer 70 is transferred from the wafer loading unit 10 to the wafer holding unit 12. Thereafter, as shown in FIG. 33, in the loading unit 40, each of the substrate housings 94 is moved to the region 44d and the region 44c. In this manner, the arrangement of each of the substrate housings in the loading unit 40 and the unloading unit 50 can be made the same.

Furthermore, the processing subsequent to FIG. 32 in the present embodiment can be applied to the processing subsequent to FIG. 21 explained in the above embodiment 1.

The present invention can be applied to various modifications without being limited to the above embodiment.

In the above embodiment, the crystal grain 72 is die-bonded to the substrate 80 so that the back surface of the crystal grain 72 faces the substrate 80. However, in the present invention, the crystal grains may be formed integrally. The front side of the circuit pattern is joined in a direction opposite to the substrate. That is, the grain can also face Bonded to the substrate.

Further, in the above-described embodiment, the first and second bonding heads 20a and 20b are joined. However, in the present invention, the bonding head may be one, or three or more may be applied. The joint head.

Further, in the above embodiment, the use of a single transport path has been described. However, in the present invention, the application of a plurality of transport channels is not hindered. For example, if the number of wafer levels is three or more, Two transfer channels can be applied. According to this, it is possible to suppress the enlargement of the bonding apparatus in proportion to the number of levels.

Further, in the above-described embodiment, the number of the levels of the crystal grains of the wafer is described as two, but it may be, for example, three or more.

Further, the substrate may be formed by joining a plurality of crystal grains and then cutting into a single piece, or the region of the substrate for bonding a plurality of crystal grains may be separated into individual members before bonding.

The embodiment described in the above embodiment of the invention can be appropriately combined according to the use, or used in addition or modification, and the present invention is not limited to the description of the above embodiment. It is clear from the description of the scope of the patent application that such combinations or additional modifications or improvements can be included in the technical scope of the present invention.

1‧‧‧Joining device

10‧‧‧ Wafer Loading Department

12‧‧‧ Wafer Holder

18‧‧‧Automatic transport mechanism

20a‧‧‧1st joint head

20b‧‧‧2nd joint head

30‧‧‧Transportation channel

30a, 30b, 42b~42d, 44a~44d, 46a~46d, 52b~52d, 54a~54d, 56a~56d‧‧‧area

40‧‧‧Loading Department

42. 52‧‧‧Drainage platform

44, 54‧‧‧ first platform

46, 56‧‧‧2nd platform

50‧‧‧Unloading Department

70‧‧‧ wafer

72‧‧‧ grain

74‧‧‧Grain (Level 1)

76‧‧‧Grain (Level 2)

80‧‧‧Substrate

Claims (13)

A bonding apparatus comprising: a wafer holding portion that holds a wafer having a plurality of dies that are divided into a plurality of levels; and a bonding head that bonds the die that is transferred from the wafer holding portion to the substrate; a transfer path for transporting the substrate to be joined by the bonding head; a mounting portion provided at one end of the transfer path; an unloading portion provided at the other end of the transfer path; and a joint control unit based on Mapping the die according to the classification of the die for each level of the wafer, bonding the respective die of the wafer to the substrate corresponding to the level of the die; and the loading portion and the unloading portion respectively occupy a plurality of In the substrate housing, the plurality of substrate housings respectively accommodate a plurality of substrates of the same level, wherein the plurality of substrates are respectively connected to a plurality of crystal grains belonging to the same level, and the bonding control unit receives the substrate from the loading unit Transferring the body to at least one substrate of the transfer channel, (i) completing bonding of all the crystal grains to the substrate by the bonding head In the case where the substrate is transported as the mounted substrate substrate to the substrate storage body of the unloading portion, (ii) when the bonding of all the crystal grains to the substrate is not performed by the bonding head And the substrate is carried back to the substrate housing of the mounting portion as an unmounted die substrate. The bonding apparatus of claim 1, wherein the bonding head is formed by bonding the die transferred from the wafer holding portion to the substrate or a die bonded to the substrate on. The bonding apparatus according to claim 1 or 2, wherein the bonding head includes a first bonding head and a second bonding head disposed on the unloading portion side of the first bonding head, and the bonding control unit is paired Each of the first and second bonding heads performs the above (i) or (ii). The joining device according to the third aspect of the invention, wherein the joining control unit preferentially performs the above (i) on the second joining head disposed on the unloading portion side. The bonding apparatus according to claim 3, wherein the bonding control unit transfers the substrate housing from the loading unit to the transport path by the first and second bonding heads based on the mapping information The above plurality of substrates belonging to the same level are subjected to the above (i) or (ii). The bonding apparatus according to claim 3, wherein the bonding control unit transfers the substrate housing from the loading unit to the transport path by the first and second bonding heads based on the mapping information The above (i) or (ii) is carried out on a plurality of substrates belonging to different grades. The bonding apparatus according to any one of claims 1 to 6, wherein the mapping information includes information for classifying each of the crystal grains of the wafer into a first or second level. The bonding apparatus according to claim 7, wherein the bonding control unit performs the above (i) or (i) on the first level of the wafer held by the wafer holding unit, and thereafter holds the The second level of the wafer of the wafer holding portion is subjected to the above (i) or (ii). The joining device of claim 7 or 8, wherein the loading portion or the unloading The plurality of platforms having a plurality of different levels, the plurality of platforms including: a first platform that houses the substrate storage body belonging to the first level; and a second platform that houses the substrate storage body belonging to the second level. The joining device according to any one of claims 1 to 9, wherein the loading portion or the unloading portion loads or unloads the substrate receiving device by accessing an automatic conveying mechanism that travels along a specific passage in the manufacturing apparatus. body. The bonding apparatus according to any one of claims 1 to 10, further comprising: a wafer loading unit that accommodates the plurality of wafers, wherein the bonding control unit is the wafer held in the wafer holding portion When all the dies to be bonded are joined, the wafer is transferred to the wafer loading unit as a processed wafer, and another wafer is transferred from the wafer loading unit to the wafer holding unit. The joining device of any one of claims 1 to 11, wherein the conveying passage is a single passage. A bonding method using a bonding device, the bonding device comprising: a wafer holding portion that holds a wafer having a plurality of dies divided into a plurality of levels; and a bonding head that is held from the wafer The die transported by the part is bonded to the substrate, the transfer path is configured to transport the substrate to be joined by the bonding head, the loading portion is provided at one end of the transfer path, and the unloading portion is disposed on the transfer path. One end; and a bonding control unit that bonds the respective die of the wafer to the substrate corresponding to the level of the die based on mapping information for classifying the die for each level of the wafer; The loading unit and the unloading unit respectively accommodate a plurality of substrate housings, wherein the plurality of substrate housings respectively accommodate a plurality of substrates belonging to the same level, and the plurality of substrates are respectively connected to a plurality of crystal grains belonging to the same level, and the method is (i) when the bonding of all the crystal grains to the substrate is completed by the bonding head, the substrate is used as the mounted crystal. The granular substrate is transferred to the substrate storage body of the unloading portion, and (ii) when the bonding of all the crystal grains to the substrate is not performed by the bonding head, the substrate is moved as an unmounted die substrate. Returning to the substrate housing of the loading unit.