TWI608232B - 用於次表面缺陷再檢測之樣本之準備的系統與方法 - Google Patents
用於次表面缺陷再檢測之樣本之準備的系統與方法 Download PDFInfo
- Publication number
- TWI608232B TWI608232B TW101144873A TW101144873A TWI608232B TW I608232 B TWI608232 B TW I608232B TW 101144873 A TW101144873 A TW 101144873A TW 101144873 A TW101144873 A TW 101144873A TW I608232 B TWI608232 B TW I608232B
- Authority
- TW
- Taiwan
- Prior art keywords
- defect
- location
- cutting
- result file
- electron microscope
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161564733P | 2011-11-29 | 2011-11-29 | |
| US13/687,244 US9318395B2 (en) | 2011-11-29 | 2012-11-28 | Systems and methods for preparation of samples for sub-surface defect review |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201333457A TW201333457A (zh) | 2013-08-16 |
| TWI608232B true TWI608232B (zh) | 2017-12-11 |
Family
ID=48467234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101144873A TWI608232B (zh) | 2011-11-29 | 2012-11-29 | 用於次表面缺陷再檢測之樣本之準備的系統與方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9318395B2 (https=) |
| EP (1) | EP2789008A4 (https=) |
| JP (1) | JP6244307B2 (https=) |
| KR (1) | KR101887730B1 (https=) |
| IL (1) | IL232703B (https=) |
| SG (1) | SG11201402475YA (https=) |
| TW (1) | TWI608232B (https=) |
| WO (1) | WO2013082181A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9165742B1 (en) * | 2014-10-10 | 2015-10-20 | Kla-Tencor Corporation | Inspection site preparation |
| US10902576B2 (en) * | 2016-08-12 | 2021-01-26 | Texas Instruments Incorporated | System and method for electronic die inking after automatic visual defect inspection |
| US10928740B2 (en) | 2017-02-03 | 2021-02-23 | Kla Corporation | Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer |
| US11035804B2 (en) | 2017-06-28 | 2021-06-15 | Kla Corporation | System and method for x-ray imaging and classification of volume defects |
| CN108061736B (zh) * | 2017-11-14 | 2020-11-13 | 东旭光电科技股份有限公司 | 使用反射电子探针对玻璃缺陷进行分析的方法 |
| US20220059316A1 (en) * | 2020-08-19 | 2022-02-24 | Kla Corporation | Scanning Electron Microscope Image Anchoring to Design for Array |
| CN116087733A (zh) * | 2023-01-16 | 2023-05-09 | 长鑫存储技术有限公司 | 半导体结构上失效点的定位方法及治具的制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153916A1 (en) * | 2001-02-20 | 2002-10-24 | Samsung Electronics Co., Ltd. | Method of identifying and analyzing semiconductor chip defects |
| CN1735866A (zh) * | 2002-11-12 | 2006-02-15 | Fei公司 | 缺陷分析仪 |
| CN100465612C (zh) * | 2005-06-10 | 2009-03-04 | 联华电子股份有限公司 | 缺陷检测方法 |
| CN102087985B (zh) * | 2009-12-03 | 2013-03-13 | 无锡华润上华半导体有限公司 | 晶圆缺陷的检测方法 |
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| US5561293A (en) * | 1995-04-20 | 1996-10-01 | Advanced Micro Devices, Inc. | Method of failure analysis with CAD layout navigation and FIB/SEM inspection |
| US5691812A (en) * | 1996-03-22 | 1997-11-25 | Ade Optical Systems Corporation | Calibration standard for calibrating a defect inspection system and a method of forming same |
| US6122562A (en) * | 1997-05-05 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for selectively marking a semiconductor wafer |
| US6453063B1 (en) * | 1998-01-28 | 2002-09-17 | Chipworks | Automatic focused ion beam imaging system and method |
| US6324298B1 (en) * | 1998-07-15 | 2001-11-27 | August Technology Corp. | Automated wafer defect inspection system and a process of performing such inspection |
| JP2000243338A (ja) | 1999-02-22 | 2000-09-08 | Hitachi Ltd | 透過電子顕微鏡装置および透過電子検査装置並びに検査方法 |
| JP3843637B2 (ja) * | 1999-02-23 | 2006-11-08 | 株式会社日立製作所 | 試料作製方法および試料作製システム |
| US6566885B1 (en) * | 1999-12-14 | 2003-05-20 | Kla-Tencor | Multiple directional scans of test structures on semiconductor integrated circuits |
| US6559457B1 (en) * | 2000-03-23 | 2003-05-06 | Advanced Micro Devices, Inc. | System and method for facilitating detection of defects on a wafer |
| WO2002033744A2 (en) * | 2000-10-18 | 2002-04-25 | Chipworks | Design analysis workstation for analyzing integrated circuits |
| US7088852B1 (en) * | 2001-04-11 | 2006-08-08 | Advanced Micro Devices, Inc. | Three-dimensional tomography |
| US6889113B2 (en) * | 2001-08-23 | 2005-05-03 | Fei Company | Graphical automated machine control and metrology |
| US6670610B2 (en) * | 2001-11-26 | 2003-12-30 | Applied Materials, Inc. | System and method for directing a miller |
| JP2003166918A (ja) * | 2001-11-29 | 2003-06-13 | Sumitomo Mitsubishi Silicon Corp | 半導体単結晶中の結晶欠陥観察用試料の作製方法 |
| JP2004071486A (ja) * | 2002-08-09 | 2004-03-04 | Seiko Instruments Inc | 集束荷電粒子ビーム装置 |
| US6959251B2 (en) | 2002-08-23 | 2005-10-25 | Kla-Tencor Technologies, Corporation | Inspection system setup techniques |
| JP4088533B2 (ja) * | 2003-01-08 | 2008-05-21 | 株式会社日立ハイテクノロジーズ | 試料作製装置および試料作製方法 |
| JP2004227842A (ja) * | 2003-01-21 | 2004-08-12 | Canon Inc | プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法 |
| TWI222735B (en) * | 2003-08-01 | 2004-10-21 | Promos Technologies Inc | Alignment mark and photolithography alignment method for eliminating process bias error |
| JP4096916B2 (ja) * | 2004-06-07 | 2008-06-04 | 株式会社日立製作所 | 試料解析方法および装置 |
| JP2006170738A (ja) * | 2004-12-15 | 2006-06-29 | Hitachi High-Technologies Corp | 半導体デバイスの欠陥解析装置及び方法 |
| US7388218B2 (en) * | 2005-04-04 | 2008-06-17 | Fei Company | Subsurface imaging using an electron beam |
| JP4927345B2 (ja) * | 2005-04-07 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 試料体の加工観察装置及び試料体の観察方法 |
| JP4641924B2 (ja) * | 2005-10-21 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | 半導体検査装置及び半導体検査方法 |
| US7676077B2 (en) * | 2005-11-18 | 2010-03-09 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
| JP4533306B2 (ja) * | 2005-12-06 | 2010-09-01 | 株式会社日立ハイテクノロジーズ | 半導体ウェハ検査方法及び欠陥レビュー装置 |
| KR20070069810A (ko) | 2005-12-28 | 2007-07-03 | 동부일렉트로닉스 주식회사 | 집속 이온비임장비를 이용한 결함 위치 인식시스템 |
| JP4812484B2 (ja) | 2006-03-24 | 2011-11-09 | 株式会社日立ハイテクノロジーズ | ボルテージコントラストを伴った欠陥をレビューする方法およびその装置 |
| JP4741408B2 (ja) * | 2006-04-27 | 2011-08-03 | 株式会社荏原製作所 | 試料パターン検査装置におけるxy座標補正装置及び方法 |
| US8455821B2 (en) * | 2006-10-20 | 2013-06-04 | Fei Company | Method for S/TEM sample analysis |
| JP4597155B2 (ja) * | 2007-03-12 | 2010-12-15 | 株式会社日立ハイテクノロジーズ | データ処理装置、およびデータ処理方法 |
| JP4974737B2 (ja) * | 2007-04-05 | 2012-07-11 | 株式会社日立ハイテクノロジーズ | 荷電粒子システム |
| JP5117764B2 (ja) * | 2007-05-22 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム加工装置 |
| JP2008293798A (ja) * | 2007-05-24 | 2008-12-04 | Toyota Industries Corp | 有機el素子の製造方法 |
| US7636156B2 (en) * | 2007-06-15 | 2009-12-22 | Qimonda Ag | Wafer inspection system and method |
| JP4769828B2 (ja) * | 2008-02-28 | 2011-09-07 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置 |
| JP5805536B2 (ja) * | 2008-10-12 | 2015-11-04 | エフ・イ−・アイ・カンパニー | 局所領域ナビゲーション用の高精度ビーム配置 |
| US8781219B2 (en) * | 2008-10-12 | 2014-07-15 | Fei Company | High accuracy beam placement for local area navigation |
| KR20100062400A (ko) | 2008-12-02 | 2010-06-10 | 주식회사 동부하이텍 | 반도체 웨이퍼의 결함 분석 방법 |
| JP5315040B2 (ja) * | 2008-12-26 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び荷電粒子線装置による画像取得条件決定方法 |
| JP5175008B2 (ja) * | 2009-02-20 | 2013-04-03 | 株式会社日立ハイテクサイエンス | ミクロ断面加工方法 |
| TWI447348B (zh) * | 2012-02-10 | 2014-08-01 | Nat Synchrotron Radiation Res Ct | 平台定位系統及其方法 |
| US9367655B2 (en) * | 2012-04-10 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Topography-aware lithography pattern check |
-
2012
- 2012-11-28 EP EP12852562.3A patent/EP2789008A4/en not_active Withdrawn
- 2012-11-28 JP JP2014544853A patent/JP6244307B2/ja active Active
- 2012-11-28 SG SG11201402475YA patent/SG11201402475YA/en unknown
- 2012-11-28 KR KR1020147017909A patent/KR101887730B1/ko active Active
- 2012-11-28 US US13/687,244 patent/US9318395B2/en active Active
- 2012-11-28 WO PCT/US2012/066887 patent/WO2013082181A1/en not_active Ceased
- 2012-11-29 TW TW101144873A patent/TWI608232B/zh active
-
2014
- 2014-05-20 IL IL232703A patent/IL232703B/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020153916A1 (en) * | 2001-02-20 | 2002-10-24 | Samsung Electronics Co., Ltd. | Method of identifying and analyzing semiconductor chip defects |
| CN1735866A (zh) * | 2002-11-12 | 2006-02-15 | Fei公司 | 缺陷分析仪 |
| CN100465612C (zh) * | 2005-06-10 | 2009-03-04 | 联华电子股份有限公司 | 缺陷检测方法 |
| CN102087985B (zh) * | 2009-12-03 | 2013-03-13 | 无锡华润上华半导体有限公司 | 晶圆缺陷的检测方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201402475YA (en) | 2014-06-27 |
| JP2014534452A (ja) | 2014-12-18 |
| EP2789008A4 (en) | 2015-07-22 |
| WO2013082181A1 (en) | 2013-06-06 |
| US20130137193A1 (en) | 2013-05-30 |
| TW201333457A (zh) | 2013-08-16 |
| EP2789008A1 (en) | 2014-10-15 |
| JP6244307B2 (ja) | 2017-12-06 |
| US9318395B2 (en) | 2016-04-19 |
| KR101887730B1 (ko) | 2018-08-10 |
| IL232703B (en) | 2018-03-29 |
| IL232703A0 (en) | 2014-07-31 |
| KR20140108662A (ko) | 2014-09-12 |
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