TWI602222B - 摻雜鉍之半絕緣第iii族氮化物晶圓及其製造方法 - Google Patents

摻雜鉍之半絕緣第iii族氮化物晶圓及其製造方法 Download PDF

Info

Publication number
TWI602222B
TWI602222B TW102130324A TW102130324A TWI602222B TW I602222 B TWI602222 B TW I602222B TW 102130324 A TW102130324 A TW 102130324A TW 102130324 A TW102130324 A TW 102130324A TW I602222 B TWI602222 B TW I602222B
Authority
TW
Taiwan
Prior art keywords
wafer
group iii
semi
iii nitride
doped
Prior art date
Application number
TW102130324A
Other languages
English (en)
Chinese (zh)
Other versions
TW201413792A (zh
Inventor
橋本忠朗
艾德華 里特斯
錫拉 霍夫
Original Assignee
希波特公司
首爾半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 希波特公司, 首爾半導體股份有限公司 filed Critical 希波特公司
Publication of TW201413792A publication Critical patent/TW201413792A/zh
Application granted granted Critical
Publication of TWI602222B publication Critical patent/TWI602222B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
TW102130324A 2012-08-24 2013-08-23 摻雜鉍之半絕緣第iii族氮化物晶圓及其製造方法 TWI602222B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261693122P 2012-08-24 2012-08-24
US13/781,543 US9255342B2 (en) 2006-04-07 2013-02-28 Bismuth-doped semi-insulating group III nitride wafer and its production method

Publications (2)

Publication Number Publication Date
TW201413792A TW201413792A (zh) 2014-04-01
TWI602222B true TWI602222B (zh) 2017-10-11

Family

ID=47989353

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102130324A TWI602222B (zh) 2012-08-24 2013-08-23 摻雜鉍之半絕緣第iii族氮化物晶圓及其製造方法

Country Status (7)

Country Link
US (2) US9255342B2 (https=)
EP (1) EP2888390A1 (https=)
JP (2) JP6457389B2 (https=)
KR (1) KR102062901B1 (https=)
CN (1) CN104781456B (https=)
TW (1) TWI602222B (https=)
WO (1) WO2014031152A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102062901B1 (ko) 2012-08-24 2020-01-06 서울반도체 주식회사 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법
US10355115B2 (en) 2016-12-23 2019-07-16 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1426497A (zh) * 2000-03-13 2003-06-25 高级技术材料公司 Iii－v氮化物基质刚玉及其制造方法和用途
US20100001289A1 (en) * 1997-10-20 2010-01-07 Eric Frayssinet Process for producing an epitaxial layer of galium nitride
TW201002880A (en) * 2008-06-04 2010-01-16 Sixpoint Materials Inc High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929770A (https=) * 1972-07-17 1974-03-16
JP3680337B2 (ja) * 1995-02-14 2005-08-10 昭和電工株式会社 発光ダイオード
US6139629A (en) 1997-04-03 2000-10-31 The Regents Of The University Of California Group III-nitride thin films grown using MBE and bismuth
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
TWI277666B (en) 2001-06-06 2007-04-01 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
JP3690326B2 (ja) * 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP4693351B2 (ja) 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
JP4513264B2 (ja) * 2002-02-22 2010-07-28 三菱化学株式会社 窒化物単結晶の製造方法
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7170095B2 (en) 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
EP1769105B1 (en) * 2004-06-11 2014-05-14 Ammono S.A. Bulk mono-crystalline gallium nitride and method for its preparation
PL368483A1 (en) * 2004-06-11 2005-12-12 Ammono Sp.Z O.O. Monocrystals of nitride containing gallium and its application
WO2006010075A1 (en) 2004-07-09 2006-01-26 Cornell Research Foundation, Inc. Method of making group iii nitrides
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
EP1917382A4 (en) 2005-07-08 2009-09-02 Univ California METHOD FOR GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AUTOCLAVE
JP4631071B2 (ja) * 2005-10-26 2011-02-16 株式会社リコー 窒化ガリウム結晶の結晶成長装置および窒化ガリウム結晶の製造方法
US20070138505A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
US8357243B2 (en) * 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
WO2007133512A2 (en) * 2006-05-08 2007-11-22 The Regents Of The University Of California Methods and materials for growing iii-nitride semiconductor compounds containing aluminum
JP4320455B2 (ja) * 2006-09-20 2009-08-26 株式会社 東北テクノアーチ 半導体デバイスの製造方法
JP4462330B2 (ja) * 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
EP2267197A1 (en) * 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US20110217505A1 (en) * 2010-02-05 2011-09-08 Teleolux Inc. Low-Defect nitride boules and associated methods
KR102062901B1 (ko) 2012-08-24 2020-01-06 서울반도체 주식회사 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100001289A1 (en) * 1997-10-20 2010-01-07 Eric Frayssinet Process for producing an epitaxial layer of galium nitride
CN1426497A (zh) * 2000-03-13 2003-06-25 高级技术材料公司 Iii－v氮化物基质刚玉及其制造方法和用途
TW201002880A (en) * 2008-06-04 2010-01-16 Sixpoint Materials Inc High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

Also Published As

Publication number Publication date
JP6457389B2 (ja) 2019-01-23
US20140054589A1 (en) 2014-02-27
KR102062901B1 (ko) 2020-01-06
US9435051B2 (en) 2016-09-06
CN104781456B (zh) 2018-01-12
WO2014031152A1 (en) 2014-02-27
US20160130720A1 (en) 2016-05-12
US9255342B2 (en) 2016-02-09
CN104781456A (zh) 2015-07-15
TW201413792A (zh) 2014-04-01
JP2015530967A (ja) 2015-10-29
EP2888390A1 (en) 2015-07-01
JP2019011245A (ja) 2019-01-24
KR20150092083A (ko) 2015-08-12

Similar Documents

Publication Publication Date Title
KR101247476B1 (ko) 탄화규소 단결정 잉곳, 이것으로부터 얻어지는 기판 및 에피택셜 웨이퍼
US8728234B2 (en) Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth
TWI429797B (zh) 第 iii 族氮化物半導體結晶基板及半導體元件
US9670594B2 (en) Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia
KR101812736B1 (ko) Iii 족 질화물 웨이퍼 및 제작 방법과 시험 방법
JP2007519591A5 (https=)
US20140087113A1 (en) Method of growing group iii nitride crystals
JP6526811B2 (ja) Ｉｉｉ族窒化物結晶を加工する方法
EP2890537A1 (en) Group iii nitride wafer and its production method
KR20150092082A (ko) 질화갈륨과 금속 산화물의 복합체 기판
US20110217505A1 (en) Low-Defect nitride boules and associated methods
EP3094766B1 (en) Group iii nitride bulk crystals and fabrication method
US9834863B2 (en) Group III nitride bulk crystals and fabrication method
TWI602222B (zh) 摻雜鉍之半絕緣第iii族氮化物晶圓及其製造方法
Hanser et al. Growth and fabrication of 2 inch free-standing GaN substrates via the boule growth method
JP2015530967A5 (https=)
CN107208305A (zh) 裂缝减少的iii族氮化物块状晶体的种晶选择和生长方法
US8741748B1 (en) Method to grow group III-nitrides on copper using passivation layers
JP2000247790A (ja) 半導体素子用基板及び半導体素子並びに窒素化合物半導体単結晶基板の製造方法