CN104781456B - 掺杂铋的半绝缘第iii族氮化物晶片和其制造方法 - Google Patents

掺杂铋的半绝缘第iii族氮化物晶片和其制造方法 Download PDF

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CN104781456B
CN104781456B CN201380048113.2A CN201380048113A CN104781456B CN 104781456 B CN104781456 B CN 104781456B CN 201380048113 A CN201380048113 A CN 201380048113A CN 104781456 B CN104781456 B CN 104781456B
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group iii
wafer
semi
bismuth
insulating
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CN104781456A (zh
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桥本忠朗
艾德华·里特斯
锡拉·霍夫
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Seoul Semiconductor Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
CN201380048113.2A 2012-08-24 2013-02-28 掺杂铋的半绝缘第iii族氮化物晶片和其制造方法 Active CN104781456B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261693122P 2012-08-24 2012-08-24
US61/693,122 2012-08-24
PCT/US2013/028416 WO2014031152A1 (en) 2012-08-24 2013-02-28 A bismuth-doped semi-insulating group iii nitride wafer and its production method

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CN104781456A CN104781456A (zh) 2015-07-15
CN104781456B true CN104781456B (zh) 2018-01-12

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US (2) US9255342B2 (https=)
EP (1) EP2888390A1 (https=)
JP (2) JP6457389B2 (https=)
KR (1) KR102062901B1 (https=)
CN (1) CN104781456B (https=)
TW (1) TWI602222B (https=)
WO (1) WO2014031152A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102062901B1 (ko) 2012-08-24 2020-01-06 서울반도체 주식회사 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법
US10355115B2 (en) 2016-12-23 2019-07-16 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1973063A (zh) * 2004-06-11 2007-05-30 阿莫诺公司 块状单晶含镓氮化物及其应用
WO2007133512A2 (en) * 2006-05-08 2007-11-22 The Regents Of The University Of California Methods and materials for growing iii-nitride semiconductor compounds containing aluminum
WO2009149300A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009151642A1 (en) * 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929770A (https=) * 1972-07-17 1974-03-16
JP3680337B2 (ja) * 1995-02-14 2005-08-10 昭和電工株式会社 発光ダイオード
US6139629A (en) 1997-04-03 2000-10-31 The Regents Of The University Of California Group III-nitride thin films grown using MBE and bismuth
US7560296B2 (en) * 2000-07-07 2009-07-14 Lumilog Process for producing an epitalixal layer of galium nitride
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
TWI277666B (en) 2001-06-06 2007-04-01 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
JP3690326B2 (ja) * 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP4693351B2 (ja) 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
JP4513264B2 (ja) * 2002-02-22 2010-07-28 三菱化学株式会社 窒化物単結晶の製造方法
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7170095B2 (en) 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
EP1769105B1 (en) * 2004-06-11 2014-05-14 Ammono S.A. Bulk mono-crystalline gallium nitride and method for its preparation
WO2006010075A1 (en) 2004-07-09 2006-01-26 Cornell Research Foundation, Inc. Method of making group iii nitrides
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
EP1917382A4 (en) 2005-07-08 2009-09-02 Univ California METHOD FOR GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AUTOCLAVE
JP4631071B2 (ja) * 2005-10-26 2011-02-16 株式会社リコー 窒化ガリウム結晶の結晶成長装置および窒化ガリウム結晶の製造方法
US20070138505A1 (en) * 2005-12-12 2007-06-21 Kyma Technologies, Inc. Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
JP4320455B2 (ja) * 2006-09-20 2009-08-26 株式会社 東北テクノアーチ 半導体デバイスの製造方法
JP4462330B2 (ja) * 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
US20110217505A1 (en) * 2010-02-05 2011-09-08 Teleolux Inc. Low-Defect nitride boules and associated methods
KR102062901B1 (ko) 2012-08-24 2020-01-06 서울반도체 주식회사 비스무트 도핑된 반절연성 3족 질화물 웨이퍼 및 그의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1973063A (zh) * 2004-06-11 2007-05-30 阿莫诺公司 块状单晶含镓氮化物及其应用
WO2007133512A2 (en) * 2006-05-08 2007-11-22 The Regents Of The University Of California Methods and materials for growing iii-nitride semiconductor compounds containing aluminum
WO2009149300A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009151642A1 (en) * 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件

Also Published As

Publication number Publication date
JP6457389B2 (ja) 2019-01-23
US20140054589A1 (en) 2014-02-27
KR102062901B1 (ko) 2020-01-06
TWI602222B (zh) 2017-10-11
US9435051B2 (en) 2016-09-06
WO2014031152A1 (en) 2014-02-27
US20160130720A1 (en) 2016-05-12
US9255342B2 (en) 2016-02-09
CN104781456A (zh) 2015-07-15
TW201413792A (zh) 2014-04-01
JP2015530967A (ja) 2015-10-29
EP2888390A1 (en) 2015-07-01
JP2019011245A (ja) 2019-01-24
KR20150092083A (ko) 2015-08-12

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