TWI600807B - 熔化固體矽的方法 - Google Patents

熔化固體矽的方法 Download PDF

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Publication number
TWI600807B
TWI600807B TW105121889A TW105121889A TWI600807B TW I600807 B TWI600807 B TW I600807B TW 105121889 A TW105121889 A TW 105121889A TW 105121889 A TW105121889 A TW 105121889A TW I600807 B TWI600807 B TW I600807B
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TW
Taiwan
Prior art keywords
crucible
solid
melt
upper opening
melting
Prior art date
Application number
TW105121889A
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English (en)
Chinese (zh)
Other versions
TW201704558A (zh
Inventor
庫克 泰 度
湯瑪士 巴士查哈德
德克 澤馬克
Original Assignee
世創電子材料公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 世創電子材料公司 filed Critical 世創電子材料公司
Publication of TW201704558A publication Critical patent/TW201704558A/zh
Application granted granted Critical
Publication of TWI600807B publication Critical patent/TWI600807B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
TW105121889A 2015-07-17 2016-07-12 熔化固體矽的方法 TWI600807B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015213474.1A DE102015213474A1 (de) 2015-07-17 2015-07-17 Verfahren zum Schmelzen von festem Silizium

Publications (2)

Publication Number Publication Date
TW201704558A TW201704558A (zh) 2017-02-01
TWI600807B true TWI600807B (zh) 2017-10-01

Family

ID=54053857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105121889A TWI600807B (zh) 2015-07-17 2016-07-12 熔化固體矽的方法

Country Status (4)

Country Link
CN (1) CN107923064A (de)
DE (1) DE102015213474A1 (de)
TW (1) TWI600807B (de)
WO (1) WO2017012733A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106546B (zh) * 2019-05-24 2021-04-27 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
US20220064816A1 (en) * 2020-09-01 2022-03-03 Globalwafers Co., Ltd. Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly
CN113862772A (zh) * 2021-09-27 2021-12-31 云南北方光学科技有限公司 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
TW201413071A (zh) * 2012-09-25 2014-04-01 Memc Electronic Materials 使用高壓熔毀以準備熔態矽熔化物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
DE102005006186A1 (de) * 2005-02-10 2006-08-24 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium mit kontrolliertem Kohlenstoffgehalt
JP5413354B2 (ja) * 2010-10-22 2014-02-12 株式会社Ｓｕｍｃｏ シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
JP2015527295A (ja) * 2012-09-10 2015-09-17 ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ 連続チョクラルスキー法及び装置
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
TW201413071A (zh) * 2012-09-25 2014-04-01 Memc Electronic Materials 使用高壓熔毀以準備熔態矽熔化物

Also Published As

Publication number Publication date
DE102015213474A1 (de) 2015-09-24
WO2017012733A1 (de) 2017-01-26
CN107923064A (zh) 2018-04-17
TW201704558A (zh) 2017-02-01

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