CN107923064A - 用于熔融固体硅的方法 - Google Patents

用于熔融固体硅的方法 Download PDF

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Publication number
CN107923064A
CN107923064A CN201680041964.8A CN201680041964A CN107923064A CN 107923064 A CN107923064 A CN 107923064A CN 201680041964 A CN201680041964 A CN 201680041964A CN 107923064 A CN107923064 A CN 107923064A
Authority
CN
China
Prior art keywords
crucible
silicon
solid silicon
upper opening
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680041964.8A
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English (en)
Chinese (zh)
Inventor
Q·T·都
T·布施哈尔特
D·策姆克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic AG filed Critical Siltronic AG
Publication of CN107923064A publication Critical patent/CN107923064A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201680041964.8A 2015-07-17 2016-05-17 用于熔融固体硅的方法 Pending CN107923064A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015213474.1A DE102015213474A1 (de) 2015-07-17 2015-07-17 Verfahren zum Schmelzen von festem Silizium
DE102015213474.1 2015-07-17
PCT/EP2016/061025 WO2017012733A1 (de) 2015-07-17 2016-05-17 Verfahren zum schmelzen von festem silizium

Publications (1)

Publication Number Publication Date
CN107923064A true CN107923064A (zh) 2018-04-17

Family

ID=54053857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680041964.8A Pending CN107923064A (zh) 2015-07-17 2016-05-17 用于熔融固体硅的方法

Country Status (4)

Country Link
CN (1) CN107923064A (de)
DE (1) DE102015213474A1 (de)
TW (1) TWI600807B (de)
WO (1) WO2017012733A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106546A (zh) * 2019-05-24 2019-08-09 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN113862772A (zh) * 2021-09-27 2021-12-31 云南北方光学科技有限公司 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220064816A1 (en) * 2020-09-01 2022-03-03 Globalwafers Co., Ltd. Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1824848A (zh) * 2005-02-10 2006-08-30 硅电子股份公司 制造具有受控制的碳含量的硅单晶的方法
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
CN104685113A (zh) * 2012-09-10 2015-06-03 Gtatip控股有限责任公司 连续cz方法和设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193694A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Ind Ltd 結晶成長装置
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
JP5413354B2 (ja) * 2010-10-22 2014-02-12 株式会社Ｓｕｍｃｏ シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
WO2014051539A1 (en) * 2012-09-25 2014-04-03 Memc Electronic Materials S.P.A. Method for preparing molten silicon melt using high pressure meltdown

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1824848A (zh) * 2005-02-10 2006-08-30 硅电子股份公司 制造具有受控制的碳含量的硅单晶的方法
CN104685113A (zh) * 2012-09-10 2015-06-03 Gtatip控股有限责任公司 连续cz方法和设备
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110106546A (zh) * 2019-05-24 2019-08-09 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN113862772A (zh) * 2021-09-27 2021-12-31 云南北方光学科技有限公司 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法

Also Published As

Publication number Publication date
TWI600807B (zh) 2017-10-01
TW201704558A (zh) 2017-02-01
WO2017012733A1 (de) 2017-01-26
DE102015213474A1 (de) 2015-09-24

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Application publication date: 20180417