TWI590370B - Electrostatic chuck Dielectric layer and electrostatic chuck - Google Patents
Electrostatic chuck Dielectric layer and electrostatic chuck Download PDFInfo
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- TWI590370B TWI590370B TW102132991A TW102132991A TWI590370B TW I590370 B TWI590370 B TW I590370B TW 102132991 A TW102132991 A TW 102132991A TW 102132991 A TW102132991 A TW 102132991A TW I590370 B TWI590370 B TW I590370B
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- electrostatic chuck
- dielectric layer
- alumina
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- composite carbonitride
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Description
本發明係關於靜電卡盤之介電體層及具有該介電體層之靜電卡盤。
過去,半導體製造裝置或液晶顯示器製造裝置等係使用靜電卡盤用以吸附保持Si等晶圓、藍寶石基板、FPD用玻璃基板、TFT基板等之各種基板(爾後亦僅表示為「基板」)。靜電卡盤大多以耐熱性或耐腐蝕性優異之氧化鋁或氮化鋁等作為主相之材料構成。其中氧化鋁材料極易取得且製造亦容易。
靜電卡盤一般具有圖1所示之構造。吸附保持基板之構件為「介電體層2」。於該介電體層2中保持基板之面為「設置面a」。設置面a之背面具有供給靜電吸附所需之電流之「電極6」。具有夾持電極6並保持介電體層2之「基底4」,且以介電體層2與基底4密封電極6。該等介電體層2、電極6及基底4合起來稱為「靜電卡盤10」。有時於基底4中亦埋設加熱器8。且,介電體層2與基底4可為相同材料,亦可為不同材料。若可能
則亦可為相同材種且為一體構造。
前述靜電卡盤10固定於背襯板20上。背襯板20一般係由對鋁合金表面進行防蝕鈍化鋁(alumite)處理之高熱傳導金屬所構成。背襯板20大多於內部通過冷卻水路22而進行溫度調整。
以上所述之靜電卡盤10與封裝板20一起稱為「卡盤單元100」。
半導體製造裝置等中所使用之使用靜電的靜電卡盤之介電體層可大致分成使用大的庫倫力之類型(庫倫型),與使用Johnsen-Rhabek力之類型(Johnsen-Rhabek型)。
其中,Johnsen-Rhabek型之吸附力比庫倫型大,具有以低電壓即可吸附之優點。且,具有吸附、脫離時之電壓較低即可之優點。另一方面,會有產生後述之洩漏電流之可能性。
Johnsen-Rhabek型之靜電卡盤之介電體層一般要求108~1013(Ω.cm)左右之體積電阻率。若介電體層之體積電阻率比該體積電阻率低,則除無法獲得良好之吸附特性以外,亦有因耐電壓變低使電流洩漏於基板上,而破壞基板上形成之電路元件之虞。將流到該基板側之電流稱為洩漏電流。
除體積電阻率外,Johnsen-Rhabek型之靜電卡盤用介電體層亦要求以下特性。
首先,必須對半導體裝置內之氛圍具有充分
耐腐蝕性之特性。尤其於電漿蝕刻步驟中使用腐蝕性高之鹵系電漿氣體。因此,對電漿氣體之耐腐蝕性(以下亦簡單記載為「耐腐蝕性」)成為必要。若該耐腐蝕性低,則靜電卡盤成分與因電漿氣體形成之反應產物會於裝置內擴散。所擴散之產物成為顆粒而附著於基板上,而帶來污染或電路短路等之不良影響。
且,正常吸附基板時,靜電卡盤表面及內部並不希望有氣孔。氣孔不僅對基板之吸附造成不良影響,且由於氣孔會保持顆粒,故除誘發該等對基板之附著外,亦使裝置內之洗淨變得困難。
接著,隨著基板之大口徑化與電路之微細化,對靜電卡盤要求高的形狀精度。多結晶陶瓷材之加工精度與結晶粒子尺寸大有關聯,粒徑愈小之材料邊緣角愈銳利等,使高加工精度成為可能。
再者,由粒徑較大之陶瓷構成靜電卡盤時,與晶圓之接觸或加工時有產生脫粒痕跡之可能性亦變大。該脫粒痕跡與前述之氣孔同樣,由於會保持顆粒,故使基板品質變差。
又,隨著結晶粒徑變大,機械特性尤其是彎曲強度下降。機械特性下降會發生構件破損或因脫粒所致之顆粒。
亦即,靜電卡盤所用之材料宜為具有微細結晶組織之材料。
靜電卡盤中所用之材料之鋁的氧化物基或氮
化物基者已有多種提案。尤其以氧化鋁較多,但氧化鋁單相材之體積電阻率為1015(Ω.cm)以上之極高,無法直接使用於Johnsen-Rhabek型之靜電卡盤。
且,例如99.5%以上之純氧化鋁單相材以內包氣孔之狀態的粒成長顯著,藉通常之燒結法無法獲得緻密之燒結體。至於靜電卡盤用材料,期望為粒徑小者。
另一方面,庫倫型之靜電卡盤若介電體層為1013Ω.cm以上則可使用,對於其他所要求之特性則與Johnsen-Rhabek型相同。
藉由於氧化鋁基、氮化鋁基之材料中添加1種或複數種添加物,作成Johnsen-Rhabek型之靜電卡盤材料之例,示於專利文獻1~專利文獻3。
專利文獻1中揭示以氮化鋁作為主成分,含10~30mol%之TiN、以氧化物換算含5~20mol%Ce之氮化鋁基之靜電卡盤。提及藉由於絕緣體之氮化鋁中添加導電性之TiN使體積電阻值下降,可獲得Johnsen-Rhabek型之靜電卡盤。
該文獻中所示之靜電卡盤由於主成分為氮化鋁故可提高熱傳導率,但TiN對於CF4等之腐蝕電漿氣體電漿之耐性低,為維持基板之品質期望儘可能少。然而,該文獻中由於即使最低亦含10mol%(約9體積%),故無法避免因Ti造成之基板品質下降。
專利文獻2中揭示作為主成分之氧化鋁為99.4重量%以上,氧化鈦為0.2~0.6重量%之組成,且在
室溫下之體積電阻率為108~1011(Ω.cm)之靜電卡盤。記載藉由該構成,而獲得被吸附體之吸附、脫離特性優異,且應答性佳之靜電卡盤。
然而,對氧化鋁添加氧化鈦由於根據燒成溫度或燒成氛圍之條件而使體積電阻率產生大的變化,故難以利用燒結製法正確地控制體積電阻率。且,由於燒結條件之稍微變化使色調產生變化,故無法量產。其之一個原因係由氧化鋁與氧化鈦生成鈦酸鋁等複合氧化物。另外,添加氧化鈦並無法充分抑制氧化鋁之顆粒成長。
專利文獻3揭示將TiC、TiN、WC、TaC、MoC、NbC、VC之任一種以上之導電性陶瓷分散於Al2O3、ZrO2、Si3N4、AlN之絕緣體陶瓷中,而具有1×10-2(Ω.cm)以下之體積電阻率,且導電性陶瓷粒子為2μm以下之陶瓷。然而,該範圍之體積電阻率無法獲得期望之靜電卡盤。
[專利文獻1]特開2000-143349號公報
[專利文獻2]特開2006-049356號公報
[專利文獻3]特開2008-087988號公報
靜電卡盤為展現高的吸附力,重要的是使其介電體層具有適當之體積電阻率。氧化鋁如前述係較便宜且耐腐蝕性高。然而,氧化鋁單相之陶瓷尤其作為利用Johnsen-Rhabek力之靜電卡盤發揮功能時並不具有適當之體積電阻率。因此,除氧化鋁之第1相以外,有必要存在若干用以賦予導電性(108~1013Ω.cm)之第2相。
然而,靜電卡盤除了吸附特性以外,如前述亦要求顆粒及污染之減低、或粒子不容易脫離之程度的機械強度。例如,以高處理量為目地,而導入蝕刻製程之高能量化與非分解之清潔,變得使靜電卡盤曝露於更嚴苛之鹵素系腐蝕性氣體之電漿環境中。另一方面,含有一定量以上之耐腐蝕性比氧化鋁差之第2相之過去技術的靜電卡盤用介電體層無法減少其腐蝕量。
問題點若僅為耐腐蝕性,則藉由減少第2相之含量即可抑制對腐蝕氣體電漿之耐性劣化。然而,TiO2除外之添加物之情況,少量添加時仍無法充分地降低體積電阻率。另一方面,添加TiO2時,以少量雖可使體積電阻率充分降低,但氧化鋁之粒子成長為極大。因此,粒子脫落時造成介電體層之較大破損。且,如前述不利於量產。
有鑑於上述,本發明之目的係提供具有以下所示特性之靜電卡盤介電體層。
(1)顯示適於利用Johnsen-Rhabek力之吸附的體積電阻率
(2)添加於氧化鋁之添加物的體積量相當少,對基板有害之顆粒發生亦少
(3)氣孔少,亦即,相對密度相當高
(4)由微細組織所組成,具有高的機械強度與高的加工精度,脫粒尺寸小
(5)不因燒結條件等稍微變化而使體積電阻率、色調受到影響,可安定地量產
本發明之靜電卡盤之介電體層係以鋁之氧化物(Al2O3)作為主相之陶瓷。氧化鋁之單體為具有1015(Ω.cm)以上之體積電阻率的絕緣體。
如前述,Johnsen-Rhabek型之靜電卡盤以體積電阻率計必須為108~1013(Ω.cm)左右。因此,對主相添加可降低體積電阻率之添加物。
所添加者為鈦與過渡元素之複合碳氮化物。該複合碳氮化物係以化學式(Ti,Me)(C,N)表示。考慮各成分時,可進一步表示為(Tix,Me1-x)(Cy,N1-y)。式中之Me係表示除Ti以外之週期表3族~11族之過渡元素之1種或2種以上。Ti、Me均為必須,但尤其,x設為0.02以上,0.3以下之值,y設為0.1以上、0.7以下之值。
該複合碳氮化物具有NaCl構造,且x超過0.3時難以作為單相安定地存在。x小於0.02時,粉末容易氧化。且,y超過0.7時,粉末製造時N容易被抽出,
不易獲得品質安定之粉末。y小於0.1時,與x同樣粉末容易氧化。
前述過渡元素中,更適當之元素Me為週期表4~6族之過渡金屬,具體而言為Zr、Hf、V、Nb、Ta、Cr、Mo、W中之1種或2種以上。
前述複合碳氮化物較好以0.05~2.5體積%分散於燒結體中。前述複合碳氮化物為導電性粒子,於後述,則為微小粒子。藉由使碳氮化物作成微小粒子,且於燒結體中分散0.05體積%以上,可輕易地使介電體層之電阻率成為108~1013(Ω.cm)之範圍。未達0.05體積%時,有無法使體積電阻率降低至前述範圍之情況,另一方面,超過2.5體積%時,會有體積電阻率過度降低之情況。
前述複合碳氮化物之平均粒徑較好為10nm以上300nm以下。作為起始原料之複合碳氮化物可藉由滿足使Ti與過渡元素複合化及成為碳氮化物二者,而極細地生成為10~300nm。另一方面,過渡元素單體之碳氮化物、複合過渡元素之碳化物、複合過渡元素之氮化物均微粒化至該大小以目前之技術尚有困難。
另外,複合碳氮化物其本身在燒結溫度下幾乎不產生粒成長。因此,僅限於與原料粉末之粒徑相等或粒徑稍大(例如200nm之原料在燒結體中為300nm)。此係複合碳氮化物之特徵。前述單體元素之碳化物、或氮化物、複合碳化物、複合氮化物之粒子等不僅難以使起始原料之粒徑小至複合碳氮化物之程度,且在燒結溫度下較容
易引起粒成長。因此,若使用該等原料,則在燒結後具有300nm以下之平均粒徑顯著較困難。
複合碳氮化物之平均粒徑小時,亦有助於設置面之面粗糙度之維持。耐腐蝕性比氧化鋁差之複合碳氮化物之粒子若為300nm以下,則尤其在腐蝕後之設置面之面粗糙可抑制為較小。
複合碳氮化物在氧化鋁之燒結溫度(1200~2000℃左右)均不會產生化學反應,彼此為安定。例如均未見到反應相或粒界之組成變化等。
由於藉由添加平均粒徑為300nm以下之微細碳氮化物,以較少量即容易在氧化鋁之結晶粒界形成導電通道,因此藉由添加比前述單體元素之碳化物、或氮化物、複合碳化物、複合氮化物之粒子等更少量即可減低體積電阻率。
如前述之TiC等之通常添加材對腐蝕氣體電漿之耐性低,而有發生顆粒及污染、對基板造成大的缺陷之可能性,故其含量愈少愈好。另一方面,氧化鋁由於如前述之耐腐蝕性相當高,故就裝置內污染之意義而言為非常適合之材料。具有對於氧化鋁將碳氮化物抑制在少量而達成期望之體積電阻率之該優點。
以(Ti,Me)(C,N)表示之複合碳氮化物對氧化鋁粒成長之抑制效果高。前述複合碳氮化物可成為非常微細之粒子,即使以少如0.05體積%之添加量仍可展現粒成長抑制效果。尤其於0.5體積%以上可顯著抑制粒成長。
複合碳氮化物之粒成長抑制效果係受到起始原料粒徑之左右,但典型上可使氧化鋁之平均粒徑成為5μm以下。因此,除可實現高的機械強度以外,即使於使用時產生脫粒,仍可將顆粒產生抑制在最小限度。且亦可使設置面之面粗糙度較小。
除了氧化鋁與前述複合碳氮化物以外,亦可添加燒結助劑。例如亦可添加MgO、ZrO2、Y2O3、TiC、CaO、Ce2O3、La2O3、SiO2等。且,除了氧化鋁與複合碳氮化物以外,亦可容許含有其他化合物。此時所容許之量係相對於氧化鋁約為5體積%以下。亦即,以氧化鋁作為主成分之第1相(主相)中所佔之體積比率典型上超過95體積%。
氧化鋁中添加TiO2之陶瓷如前述會因燒結條件等之稍微變化而引起其體積電阻率、色調之變化。此係因為隨著燒結溫度或氛圍而使TiO2之還原狀態不同以外,亦因氧化鋁與TiO2依據燒結溫度而引起化學反應或固熔等之故。構成本發明之靜電卡盤之氧化鋁與(Ti,Me)(C,N)彼此間不引起固熔或反應。因此,若控制組成比或起始原料之粒徑,則可在體積電阻率或色調沒變化下製造。
依據本發明,可提供一種具有前述(1)至(5)之特性的靜電卡盤介電體層。且,針對Johnsen-Rhabek型之
靜電卡盤,可使組織微細化,且提高對電漿氣體之耐腐蝕性、機械強度。
2‧‧‧介電體層
4‧‧‧基底
6‧‧‧電極
8‧‧‧加熱器
10‧‧‧靜電卡盤
20‧‧‧背襯板
22‧‧‧冷卻水路
100‧‧‧卡盤單元
a‧‧‧設置面
圖1顯示靜電卡盤之一般構造。
本發明之靜電卡盤介電體層典型上可藉以下形態製造、使用。
原料粉末係使用平均粒徑0.2~3μm之氧化鋁作為主相用。氧化鋁可為純度高者,亦可為附加少量之MgO、ZrO2、TiO2、Y2O3、CaO、Ce2O3、La2O3、SiO2等燒結助劑等者。
複合碳氮化物係必定含有Ti之過渡元素的複合碳氮化物。過渡元素以Me表示時係以(Ti,Me)(C,N)之化學式表示。靜電卡盤之原料粉末中使用之複合碳氮化物之起始原料之平均粒徑為10~200nm。該複合碳氮化物可為藉還原法、氣相法或液相法獲得者,亦可為藉粉碎法獲得者。Me係如前述,較好為週期表4~6族之過渡元素(Ti除外),最好為W、Mo之一種或二者。
二者之混合比以體積比計,係以使氧化鋁之主相成為97.5~99.95體積%,複合碳氮化物相成為0.05~2.5體積%之方式秤量。例如加入如燒結助劑之
Al2O3、複合碳氮化物以外之添加物時,將該等作為全部併入主相者予以處理。係因為重要的是複合碳氮化物之體積分率。
秤量粉末後,以前述比例混合,且視情況進行粉碎。該作業中使用者雖列舉球磨機、磨碎機、擂潰機、珠粒研磨機等為代表,但只要可充分混合則可為任何方法。可為濕式亦可為乾式。濕式時則隨後進一步乾燥,獲得混合粉末。
將混合粉末以粉末之狀態、或者使粉末藉一次機械加壓作成壓粉體之狀態,投入熱加壓用模具中。
熱加壓只要以習知方法進行即可。應特別記載之溫度及壓力為1100~2000℃、5~30MPa。保持時間適宜為10分鐘~2小時左右。
冷卻後取出熱加壓體,經機械加工整飾面形狀,加工成最終形狀。
以上係針對藉由熱加壓之燒結加以記載,但尤其是模具加壓或進行燒結前之整形之情況,亦可在粉末混合後添加成形用黏結劑。成形用黏結劑宜為鏈烷、PVA(聚乙烯醇)、PEG(聚乙二醇)等之習知有機黏結劑。有機黏結劑係在燒結前藉由處於高溫而在200~600℃之範圍內氣化、蒸發。亦可使如此之脫脂體在真空中、還原氛圍氣體中進行燒結。
本實施例顯示以各種條件獲得本發明之靜電卡盤介電體層之條件及物性值。
構成主相之氧化鋁係使用平均粒徑為0.5μm且純度99.9%之市售粉末。
針對主相中任意含有之燒結助劑等之TiO2、TiC係使用平均粒徑為1~2μm且純度99%以上之原料粉末。
複合碳氮化物粉末係使用平均粒徑為100nm、純度99.5%以上之粉末。組成係以(Ti,Me)(C,N)表示。
且,上述以外之氧化物、碳化物、氮化物、複合碳化物、複合氮化物之起始原料係分別使用平均粒徑為0.5μm(500nm)之原料粉末。該等之粒徑比複合碳氮化物粉末大,比其更微細之粉末極難取得。
以表1所示之調配組成混合以上所述之起始原料。
以下,關於自混合至評價之說明,係使用表1中之No.3之試料加以說明。
以表1所示之組成,以使燒結後之體積分率計成為99.5:0.5之方式秤量氧化鋁粉末、複合碳氮化物粉末,且添加甲醇與氧化鋁球,以球磨機粉碎20小時,經混合獲得漿液。至於複合碳氮化物粉末係使用(Ti0.8Mo0.2)(C0.6N0.4)之粉末。
以噴霧乾燥機使漿液進行乾燥、造粒,獲得
混合粉末。
使混合粉末在熱加壓爐中,於氮氣流動下施加15MPa之壓力進行熱加壓。燒結溫度係以先燒結至1400℃,在未獲得99%以上之相對密度時上升50℃溫度之方法尋找適宜條件。由於在1650℃下已超過相對密度之99%,故將該溫度設為燒結溫度(其他試料亦以相同方法設定燒結溫度)。又,針對No.3以外之試料、比較試料,即使提高溫度亦無法使相對密度達到99%者,係記載所得中最高之相對密度。
以研削盤將所得燒結體機械加工成體積電阻率測定試驗片( 20×1.5mm)及抗折力試驗片(3×4×40mm)形狀,且分別測定氧化鋁之平均結晶粒徑、體積電阻率及機械物性值。體積電阻率係以JIS C 2151所記載之方法測定。體積電阻率係以於接近靜電卡盤之實際使用環境之100℃進行測定之值。
藉以上方法,表1所示各種組成不同之試料亦進行相同試驗。測定結果示於表1。
由表1之結果可知如下。
使用SEM(掃描型電子顯微鏡)對本發明範圍之試料的試料No.1~試料No.10之組織進行組織觀察。本發明之試料No.1~試料No.10相較於*比較試料No.11~19,確認氧化鋁之結晶平均粒徑較小。尤其。與其他添加劑相比,藉由添加具有高的粒成長抑制效果之微細複合碳氮化物(Ti,Me)(C,N)(但Me為Mo或W),可使氧化鋁之結晶粒徑變得充分小。此亦可由使等量添加第2相之添加物的試料
No.3與*比較試料No.12及14、試料No.6與*比較試料No.13、15、16、17、18之對比而明瞭。試料No.10係使用(Ti0.85,W0.15)(C0.7,N0.3)作為複合碳氮化物之例。可知使用(Ti,Mo)(C,N)之試料雖稍差,但即使使用Mo以外之過渡元素作為Me,使氧化鋁之結晶粒徑變小之作用亦高。
試料No.1~試料No.10之氧化鋁相之平均粒徑為1.9~10.2μm。尤其試料No.3~7、10為極小而在1.9~3.3μm之範圍。另一方面,具有0.5~2體積%之氧化鋁與TiO2之*比較試料No.12、13之各平均粒徑為10.3μm、27.5μm。一般陶瓷之粒子脫落係隨著粒界破壞,以結晶粒子單位所發生。因此,本發明之靜電卡盤用介電體層即使發生粒子脫落,相較於以往技術之氧化鋁-TiO2系之靜電卡盤用介電體層,脫落尺寸及量均極少。
本發明範圍的試料3~6與*比較試料12~18之第2相的體積分率為同量。試料No.3與*比較試料No.12及14、試料No.6與*比較試料No.13、15、16、17、18之體積電阻率之比較中,本發明之陶瓷顯示更低之值。亦即,藉由於微細之燒結中使用幾乎沒有粒成長之複合碳氮化物(Ti,Mo)(C,N),可藉較少的第2相之體積分率降低體積電阻率。可知為實現同等體積電阻率之必要添加量比其他添加量更為少量即可達成。再者,如上述,本發明陶瓷之平
均粒徑較小,一般在組成相同之情況下,亦可舉例出組織之粒徑愈小則強度或硬度愈高,且不易破損之優點。
另外,複合碳氮化物(Ti,Me)(C,N)(但Me為Mo或W)相之量處於0.05體積%至2.5體積%之範圍的試料No.1~試料No.10顯示108~1013(Ω.cm)之範圍的體積電阻率,適合Johnsen-Rhabek型之靜電卡盤。
測定3點彎曲強度、維氏(Vickers)硬度。彎曲強度係以3點彎曲法(JIS R 1601)測定。維氏硬度係以加壓力1Kgf進行試驗。體積電阻率係在室溫以JIS C 2151所記載之方法測定。
本發明之構成靜電卡盤用介電體層之試料No.1~試料No.10之3點彎曲抗折力為400(試料No.1)~712(試料No.7)MPa之範圍,維氏硬度為1517(試料No.1)~2014(試料No.5)Hv之範圍,具有作為靜電卡盤用介電體層使用上沒有問題之特性。
Claims (6)
- 一種靜電卡盤介電體層,其係由陶瓷材料所構成,該陶瓷材料係於以氧化鋁作為主成分之第1相中,使由以(Ti,Me)(C,N)表示之Ti與Me之複合碳氮化物(但Me為週期表3族~11族之過渡元素中之1種或2種以上)所成之第2相分散而成,其中前述第2相的體積比例為0.05~2.5體積%。
- 如請求項1之靜電卡盤介電體層,其中前述Ti與Me之複合碳氮化物的平均粒徑為10~300nm。
- 如請求項1之靜電卡盤介電體層,其中前述Me為週期表4~6族元素之1種或2種以上。
- 如請求項1之靜電卡盤介電體層,其中前述Me為Mo,或必定具有Mo之2種以上的過渡金屬。
- 如請求項1之靜電卡盤介電體層,其中以(Ti1-x,Mex)(C1-y,Ny)表示前述(Ti,Me)(C,N)時,滿足下述關係:0.02≦x≦0.3,且0.1≦y≦0.7。
- 一種靜電卡盤,其係具有如請求項1至5中任一項之靜電卡盤介電體層者。
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JP6708518B2 (ja) * | 2016-08-09 | 2020-06-10 | 新光電気工業株式会社 | 基板固定装置及びその製造方法 |
CN113874336B (zh) * | 2019-05-22 | 2023-03-28 | 住友大阪水泥股份有限公司 | 复合烧结体、静电卡盘部件、静电卡盘装置及复合烧结体的制造方法 |
JP6738505B1 (ja) * | 2020-05-28 | 2020-08-12 | 黒崎播磨株式会社 | 静電チャック用誘電体 |
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JPH0234557A (ja) * | 1988-07-25 | 1990-02-05 | Toshiba Tungaloy Co Ltd | 易焼結性酸化アルミニウム基セラミックス焼結体 |
US5188908A (en) * | 1990-02-23 | 1993-02-23 | Mitsubishi Materials Corporation | Al2 O3 Based ceramics |
JP2805969B2 (ja) * | 1990-04-05 | 1998-09-30 | 三菱マテリアル株式会社 | 高靭性および高強度を有する酸化アルミニウム基セラミックス |
JPH04124058A (ja) * | 1990-09-14 | 1992-04-24 | Kobe Steel Ltd | A1↓2o↓3系セラミックス |
JP2938679B2 (ja) * | 1992-06-26 | 1999-08-23 | 信越化学工業株式会社 | セラミックス製静電チャック |
JPH11176920A (ja) * | 1997-12-12 | 1999-07-02 | Shin Etsu Chem Co Ltd | 静電吸着装置 |
JP3663306B2 (ja) | 1998-11-02 | 2005-06-22 | 京セラ株式会社 | 窒化アルミニウム質焼結体およびそれを用いた静電チャック |
JP2002324832A (ja) * | 2002-02-19 | 2002-11-08 | Kyocera Corp | 静電チャック |
US6660665B2 (en) * | 2002-05-01 | 2003-12-09 | Japan Fine Ceramics Center | Platen for electrostatic wafer clamping apparatus |
US6986865B2 (en) | 2002-07-10 | 2006-01-17 | Watlow Electric Manufacturing Company | Method for manufacturing an electrostatic chuck |
JP2006049356A (ja) | 2004-07-30 | 2006-02-16 | Toto Ltd | 静電チャック |
JP5096720B2 (ja) | 2006-09-29 | 2012-12-12 | 日本タングステン株式会社 | 導電性複合セラミックスの製造方法 |
JP2009302518A (ja) * | 2008-05-13 | 2009-12-24 | Toto Ltd | 静電チャック |
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