TWI587426B - A manufacturing method of a semiconductor device, and a semiconductor manufacturing apparatus - Google Patents
A manufacturing method of a semiconductor device, and a semiconductor manufacturing apparatus Download PDFInfo
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- TWI587426B TWI587426B TW104106907A TW104106907A TWI587426B TW I587426 B TWI587426 B TW I587426B TW 104106907 A TW104106907 A TW 104106907A TW 104106907 A TW104106907 A TW 104106907A TW I587426 B TWI587426 B TW I587426B
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 147
- 239000010410 layer Substances 0.000 claims description 49
- 239000012790 adhesive layer Substances 0.000 claims description 27
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0843—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Description
本申請案享受以日本專利申請2014-187677號(申請日:2014年9月16日)為基礎申請之優先權。本申請案藉由參照該基礎申請而包含基礎申請之所有內容。
本發明之實施形態係關於一種半導體裝置之製造方法及半導體製造裝置。
作為半導體裝置,例如於具有TSV(through silicon via,矽通孔)構造之裝置中,會於進行薄厚加工後對半導體基板進行通孔形成、配線形成、絕緣層形成、凸塊形成等加工。關於此種半導體基板中用以實現步驟搬送之技術,有形成利用接著材料使半導體基板貼合於支持基板之狀態之技術。於該技術中,必須將加工步驟後之半導體基板自支持基板剝離。
於該情形時,係於將半導體基板貼附於支持基板而加以保持之步驟中,使用具備如下功能之接著材料,即,於半導體基板之背面加工中不會自支持基板剝離,且於加工後能確實地自支持基板剝離。作為此種接著材料,例如有製成2層以上之構造之接著材料,該構造包含具有接著功能之接著層及具有剝離功能之剝離層。
當使用此種接著材料時,為了防止貼合中之元件基板於加工時之位置偏移,於半導體基板之周邊部未形成剝離層,存在接著層直接與
半導體基板接觸之部分。然而,於加工後自支持基板剝離半導體基板之步驟中,該接著層直接與半導體基板接觸之部分成為妨礙剝離之因素,因此例如有利用藥液使接著層溶解之方法、或利用刮刀等直接將接著層直接與半導體基板接觸之部分去除之方法等。
然而,於前一方法中,有如下問題;接著層因加工步驟中使用之藥液而溶解或膨脹,導致元件基板於加工步驟中剝落。又,當採用對加工步驟中使用之藥液具有耐受性之接著層時,有如下問題:即便面對用於溶解之藥液,接著層之溶解速度亦降低,從而生產性降低。又,於後一方法中,有如下問題:考慮到加工精度而縮小半導體基板周邊部分之有效區域,從而生產性降低。
本實施形態提供一種半導體裝置之製造方法及半導體製造裝置,能以容易且廉價之順序剝離將第1基板接著於第2基板而成之基板。
本實施形態之半導體裝置之製造方法具有以下步驟:於第1基板之背面側貼附貼片,上述第1基板於表面之外周部具有接著層之一部分,隔著上述接著層及剝離層而設置有第2基板,且形成有半導體元件,上述貼片塗佈有接著強度會因紫外線照射而降低之接著劑;自上述貼片之背面開始對設置於上述第1基板外周部之上述接著劑部分照射紫外線而使接著強度降低;以及於接著強度降低之上述接著劑部分及上述剝離層部分,將貼附於上述貼片之狀態下之上述第1基板剝離而使其與上述第2基板分離。
1‧‧‧半導體基板(第1基板)
2‧‧‧元件形成部
2a‧‧‧切晶
3‧‧‧剝離層
4‧‧‧支持基板(第2基板)
5‧‧‧接著層
6‧‧‧貼片
6a‧‧‧硬化部
7‧‧‧環狀框
10、20‧‧‧紫外線照射裝置(半導體製造裝置)
11、21‧‧‧載物台
12‧‧‧旋轉軸
13‧‧‧雷射照射部
21a‧‧‧透光部
22‧‧‧紫外線燈
UV‧‧‧紫外線
圖1(a)~(c)係第1實施形態之製造步驟中之端部之模式性剖視圖。
圖2(a)~(c)係第1實施形態之製造步驟中之端部之模式性剖視圖。
圖3(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖3(b)係製造步驟中之整體之模式性剖視圖。
圖4(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖4(b)係製造步驟中之整體之模式性剖視圖。
圖5(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖5(b)係製造步驟中之整體之模式性剖視圖。
圖6(a)係紫外線照射裝置之模式性概觀立體圖,圖6(b)係其模式性側視圖。
圖7係第2實施形態之製造步驟中之端部之模式性剖視圖。
圖8(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖8(b)係製造步驟中之整體之模式性剖視圖。
圖9(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖9(b)係製造步驟中之整體之模式性剖視圖。
圖10(a)係第1實施形態之製造步驟中之端部之模式性剖視圖,圖10(b)係製造步驟中之整體之模式性剖視圖。
圖11(a)、(b)係說明雷射光之照射範圍之圖。
圖12(a)、(b)係說明雷射光之照射範圍之圖。
圖13係第3實施形態之紫外線照射裝置之模式性側視圖。
以下,參照圖式對複數個實施形態進行說明。又,圖式為模式性圖式,厚度與平面尺寸之關係、各層厚度之比例等並非必須與現實中一致。而且,上下左右之方向亦僅表示以下述半導體基板中之電路形成面側為上或下時之相對方向,並非必須與以重力加速度方向為基準之方向一致。
(第1實施形態)
圖1~圖6係表示第1實施形態之圖,以下,關於第1基板,以實施背面研磨及形成TSV(through silicon via)之步驟之半導體基板1為對象,對其加工步驟進行說明。
圖1(a)表示例如作為第1基板之矽基板等半導體基板1外周部之剖面。於半導體基板1表面之除外周部以外之部分之元件形成部2,藉由經由半導體製造步驟而如圖1(b)所示般形成為具備複數個晶片之狀態,該等晶片具有包含半導體元件之半導體電路。當結束對半導體基板1之元件形成部2嵌入半導體電路之步驟時,繼而對半導體基板1表面(上表面)側之外周部分進行研磨處理(邊緣修整處理)。藉此,如圖1(c)所示般形成為於半導體基板1之外周部分形成階差部1a且於表面側剩餘元件形成部2之狀態。於該情形時,半導體基板1之階差部1a之研磨深度例如可設定為200~300μm之範圍。
其次,如圖2(a)所示般於半導體基板1之元件形成部2之表面設置接著力較弱之剝離層3。作為剝離層3,可應用能以較小之應力實現剪切破壞之例如熱塑性樹脂等材料。剝離層3係形成於半導體基板1表面之大致整個面,但於最外周部分以例如0.1~5mm之範圍之寬度呈周狀地設置未形成之部分。因此,剝離層3係形成於半導體基板1之除元件形成部2之外周部以外之大致整個面。
其次,如圖2(b)所示般將形成有剝離層3之半導體基板1貼附於支持基板4。於該情形時,於貼附中使用接著劑而形成為隔著接著層5之狀態。設想於貼合半導體基板1時因位置偏移而超出範圍之情形,支持基板4例如使用外徑尺寸較半導體基板1大0.1~1mm之基板。藉此,能防止由位置偏移引起之半導體基板1之破裂。
又,支持基板4例如使用厚度處於600~800μm之範圍之基板,且對於加工步驟結束而分離後之基板,可對表面加以研磨而再利用。又,於本實施形態中,支持基板4例如使用矽基板。當使用矽基板作為半導體基板1時,藉由使用相同材質之矽基板,能以不易受到熱應力等應變之狀態進行操作。作為支持基板4,除矽基板以外,亦可使用玻璃板等材料之基板。
接著層5之厚度例如設置於1~100μm之範圍。剝離層3之厚度例如設定於0.01~20μm之範圍,從而厚至能實現支持基板4之剝離之程度且薄至防止貼合中之半導體基板1之位置偏移之程度。又,接著層5係以覆蓋階差部1a之內側部分之方式設置於半導體基板1之外周部。又,將上述剝離層3與接著層5之密接性或與半導體基板1之密接性調整得較接著層5與支持基板4之密接度小。又,作為剝離層3,亦可使用能藉由層間之界面剝離而將支持基板4剝離之材料。
其次,如圖2(c)所示般於將半導體基板1貼附於支持基板4之狀態下,進行半導體基板1之背面加工。於該情形時,首先,實施背面研磨將半導體基板1之厚度加工至例如50μm以下。藉此,半導體基板1之形成於外周部之階差部1a部分消失,成為最外周部分被切割之狀態,並成為剩餘藉由邊緣修整處理而剩餘之表面部分之元件形成部2之狀態。又,於背面研磨處理後,對半導體基板1之元件形成部2實施其他背面加工。例如,藉由眾所周知之方法形成自背面側起貫通至表面側之貫通電極(TSV)、或貫通電極之電極墊等。
當以上述方式結束對半導體基板1之元件形成區域2之加工步驟時,繼而如圖3(a)、(b)所示般將貼片6貼附於半導體基板1之元件形成部2之背面。此處,圖3(a)表示支持基板4及半導體基板1之元件形成部2周邊部之剖面。圖3(b)係表示環狀框7整體之剖視圖。又,圖3(b)中,省略了剝離層3及接著層5之圖示。
如圖3(a)、(b)所示,貼片6被切割得較半導體基板1之元件形成部2之外形大,且由環狀框7保持。貼片6成為包含基材及以接著劑為主體之黏附層之2層以上之積層構造。又,貼片6之黏附層具有如下特性:因紫外線(UV)照射而交聯、硬化,受到紫外線之硬化部之接著力降低。
其次,如圖4(a)、(b)所示般對貼片6進行紫外線照射。於該情形時,進行紫外線照射之範圍為較接著層5直接與半導體基板1之元件形成部
2接觸之貼合部分大之範圍。藉此,於貼片6形成接著強度降低之硬化部6a。硬化部6a形成為圓環狀,且如圖4(a)所示,其內側之直徑設定於設置於元件形成部2上表面之剝離層3外周之位置,或者設定得較該位置更靠內側,外側之直徑設定得較位於元件形成部2外側之接著層5與片材6接觸之部分更靠外側。
又,對貼片6之紫外線照射係使用如圖6所示之構成進行。圖6(a)表示進行紫外線照射時之配置關係之概觀。又,圖6(b)表示作為半導體製造裝置之紫外線照射裝置10之概略構成。紫外線照射裝置10係如下裝置:於將半導體基板1之元件形成部2側貼附於支持基板4之狀態下,將貼片6貼附於元件形成部2之背面側,並於利用環狀框7保持之狀態下照射紫外線。
載置環狀框7及貼片6之載物台11係包含如具有透光性之玻璃板或壓克力板之材料之圓盤狀載物台,且於中央部之下部被旋轉軸12所支持。旋轉軸12係設置成可利用馬達等旋轉驅動,藉此,構成為載物台11可旋轉。於載物台11之下表面側設置有雷射照射部13。雷射照射部13可輸出紫外線雷射光,且朝向上表面之載物台11照射紫外線雷射,而對載置於載物台11上之環狀框7及貼片6或半導體基板1之元件形成部2照射紫外線雷射光。此時,藉由利用旋轉軸12使載物台11旋轉,能沿著周向呈圓環狀地照射紫外線雷射光。而且,雷射照射部13係構成為能將照射之紫外線雷射光之照射範圍設定為適當之範圍。
藉此,當如圖6(a)所示般自下方對貼附有貼片6之狀態下之半導體基板1之元件形成部2周圍照射紫外線雷射光時,伴隨載物台11之旋轉,紫外線雷射光照射至沿著半導體基板1外周部之部分之貼片6而呈圓環狀地形成硬化部6a。又,為了形成硬化部6a,載物台11例如轉動1圈。
其次,如圖5(a)、(b)所示般將支持基板4自半導體基板1之元件形
成部2分離。於該情形時,如圖4(a)所示,支持基板4與半導體基板1之元件形成部2剝離之部分係圖中粗虛線所示之部分,即,片材6之硬化部6a與接著層5及元件形成部2面對之部分、元件形成部2與剝離層3面對之部分。又,該等交界部分之元件形成部2之內部縱向地破裂而分離。此時,元件形成部2被研磨處理得較薄,因此成為容易縱向破裂之狀態,且藉此可於破裂時抑制破裂擴大至元件形成部2之內側部分。
藉此,可如圖5(a)、(b)所示般於與支持基板4分離之狀態下剝離貼附於貼片6之硬化部6a內周部分之元件形成部2。貼附於貼片6上之狀態下之半導體基板1之元件形成部2藉由進行切晶處理而分離出可使用之晶片。
藉由此種第1實施形態,於利用接著層5將半導體基板1貼附於支持基板4之狀態下對元件形成部2進行加工,此後,貼附貼片6後進行紫外線雷射光之照射,從而於貼片6形成硬化部6a,因此可藉由設置硬化部6a而使元件形成部2與接著層5密接之部分容易剝離。
又,作為照射紫外線雷射光時之半導體製造裝置10,由於將半導體基板1貼附於貼片6,並於利用環狀框7保持之狀態下將其載置於包含具有透光性之材料之載物台11,一面旋轉一面利用雷射照射部13自下側照射紫外線雷射光,因此可有效率地於貼片6設置呈圓環狀之硬化部6a。
又,於上述實施形態中,亦可於將半導體基板1貼附於支持基板4前,預先在元件形成部2之沿著劃線之位置上對晶片形成易於分離之結晶缺陷部等。
(第2實施形態)
圖7~圖12係表示第2實施形態。以下,對與第1實施形態不同之部分進行說明。
於本實施形態中,與第1實施形態同樣地將半導體基板1貼附於支
持基板4而進行半導體基板1之背面加工。此後,於貼附貼片6之前,如圖7所示般於半導體基板1之元件形成部2之背面進行切晶加工。於切晶加工中,切斷元件形成部2而以到達剝離層3之深度進行加工。藉此,半導體基板1之元件形成部2於背面以特定深度呈格子狀地形成有切晶槽2a,半導體電路成為於被晶片分離之狀態下接著於剝離層3之狀態。
其次,如圖8所示般於元件形成部2之背面側貼附貼片6。此處,圖8(a)表示支持基板4及半導體基板1之元件形成部2之周邊部之剖面。圖8(b)係表示環狀框7整體之剖視圖。又,於圖8(b)中,省略了剝離層3及接著層5之圖示。貼片6可使用與第1實施形態相同之貼片。又,貼片6之黏附層具有因紫外線照射而交聯並硬化導致接著力降低之特性。
其次,如圖9(a)、(b)所示般對接著層5直接與半導體基板1之元件形成部2接觸之部分之貼片6進行紫外線照射。藉此,於貼片6形成接著強度降低之硬化部6a。硬化部6a形成為圓環狀,且如圖9(a)所示,其內側之直徑設定於設置於元件形成部2上表面之剝離層3外周之位置或較該位置更靠內側,外側之直徑設定得較位於元件形成部2外側之接著層5與片材6接觸之部分更靠外側。
其次,如圖10(a)、(b)所示般將支持基板4從半導體基板1之元件形成部2分離。於該情形時,如圖10(a)所示,支持基板4與半導體基板1之元件形成區域2剝離之部分係片材6之硬化部6a與接著層5及元件形成部2面對之部分、及元件形成部2與剝離層3面對之部分,且於元件形成部2中係圖中藉由切晶而分離成晶片之切晶2a部分。
藉此,可於與支持基板4分離之狀態下剝離貼附於貼片6之硬化部6a內周部分之元件形成部2。貼附於貼片6上之狀態下之半導體基板1之元件形成部2係於藉由進行切晶處理將可使用之晶片單個地分離之狀態下貼附。
再者,於本實施形態中,由於在貼附貼片6之前實施切晶步驟,因此於自接著於貼片6之元件形成部2之晶片P分離支持基板4之情形時,能形成為容易於切晶槽2a部分斷裂之構造,能抑制斷裂部分擴大至可使用之晶片P,能確實地確保可使用之晶片P。
其次,如上所述,參照圖11及圖12對進行切晶處理時之切晶槽2a之形成位置與紫外線照射範圍之關係進行說明。圖11(a)表示對半導體基板1之元件形成部2進行切晶處理時切晶槽2a之位置。半導體基板1之元件形成部2被切晶槽2a分離成矩形之晶片P。晶片P於最外周部分有角部掉落而無法作為可使用之晶片P獲取之部分。於以實線表示切晶槽2a之部分存在可使用之晶片P。
針對如上所述之平面圖案而對貼片6照射紫外線雷射之位置為下述範圍。即,當將照射紫外線雷射之環狀區域之內徑設為Ri,將外徑設為Ro時,設定內徑Ri之位置為如下範圍:圖11(a)所示之A位置、即與剝離層3之外徑相同或較該外徑更靠內側之位置、且藉由切晶所劃分之可使用之晶片P之切晶槽2a之位置B。而且,設定外徑Ro之位置為如下範圍:圖11(b)所示之位置、即較接著層5與貼片6接觸之部分更靠外側且大致與支持基板4之外徑相同之位置C或較該位置C更靠外側之位置、且與環狀框7之內徑相等之位置D。
其結果為,如圖12(a)所示,為了分離支持基板4所需之最小限度之紫外線雷射照射範圍為上述內徑A至外徑C之範圍6a。再者,關於外徑C,可為貼片6實際上與接著層5接著之部分,接著層5之外周位置並非必須為如圖所示之位置,若考慮到周向場所上之伸出量之不均,則支持基板4之外徑位置C為確知。反之,若確知接著層5之位置,則亦可將該位置作為基準。
另一方面,如圖12(b)所示,為了分離支持基板4所需之最大限度之紫外線雷射照射範圍為上述內徑B至外徑D之範圍6b。於該情形時,
於照射範圍中之外側支持基板4之外側至外徑D之位置之範圍內,僅對貼片6照射紫外線雷射使其硬化。
再者,當以此方式對支持基板4外側至外徑D之位置之範圍照射紫外線雷射,即對貼片6照射紫外線雷射使其硬化時,可獲得如下所述之硬化。即,於剝離支持基板4之後之剝離層之清洗步驟中,貼片6之黏附層硬化,因此可抑制黏附層中之未硬化成分溶出至清洗液而再附著於晶片P。
於該情形時,為了獲得上述效果,根據貼片6之黏附層溶出至清洗液之程度之不同,無須對露出之全部貼片照射紫外線雷射,僅對需要之部位照射紫外線雷射即可。而且,於本實施形態中,對環狀框7下之貼片6之一部分不照射紫外線雷射,以使貼片6不會自環狀框7剝離。然而,即便於照射紫外線雷射之情形時,當環狀框7與貼片6之密接性較強,貼片6不會自環狀框7剝離時,亦可將紫外線雷射照射至位於環狀框7下之貼片6。
藉由此種第2實施形態,可獲得與第1實施形態相同之作用效果。而且,由於在預先對元件形成部2進行切晶處理之後貼附貼片6,因此剝離支持基板4時,雖然有效區域外之晶片P破裂,但能確實地防止破裂擴大至有效區域之晶片P。
又,於上述實施形態中,表示使切晶深度到達剝離層3之中間之情形,亦可切斷至元件形成部2與剝離層3之交界部分。又,亦能夠以到達剝離層3之深度進行切斷,或者進一步切斷至到達接著層5之深度。
(第3實施形態)
圖13表示第3實施形態,且表示與第1實施形態所使用之紫外線照射裝置不同之例。紫外線照射裝置20係與紫外線照射裝置10同樣地照射紫外線之裝置,被其照射之基板處於如下狀態:於將半導體基板1之元件形成部2側貼附於支持基板4之狀態下,將貼片6貼附於元件形成
部2之背面側,並利用環狀框7加以保持。
載置環狀框7及貼片6之載物台21係除透光部21a以外包含具有遮光性之材料之圓盤狀載物台,例如為周圍被保持之構成。載物台21之透光部21a與對載置於上表面之環狀框7及貼片6進行紫外線照射之部位6a對應地設置成圓環狀。於載物台21之下表面側設置有紫外線燈22。紫外線燈22具有對應於載物台21之大致整個面之發光面,並朝向上方照射紫外線。
藉此,若自紫外線燈22朝向上方照射紫外線,則透過載物台21之透光部21a之紫外線照射至貼片6之一部分,貼片6因紫外線之照射而呈圓環狀地硬化,從而形成硬化部6a。無需紫外線照射之部分被載物台21遮光,因此可選擇性地僅對需要之部分進行照射。
因此,藉由此種第3實施形態亦能獲得與第1實施形態相同之作用效果。又,由於設置具有透光部21a之載物台21及紫外線燈22而統括地照射紫外線,因此可於短時間內於貼片6形成圓環狀之硬化部6a。又,由於無須設置使載物台21旋轉之機構,因此能使紫外線照射裝置20成為簡單之構成。
(其他實施形態)
除上述實施形態中所說明之半導體裝置以外,可應用於如下所述之變化之形態。
第1基板及第2基板係利用使用半導體基板1及支持基板4之情形進行說明,但並不限定於此,只要係將由接著層貼合之狀態下之2塊基板分離之構成便能應用。
紫外線之照射示出了以下方式之例,即一面使載物台11旋轉一面自雷射照射部13照射雷射光之方式,或者自紫外線燈22對具有遮光部21a之載物台21照射紫外線之方式,但並不限定於此,可利用各種方法照射。例如,可採用如下構成:設置利用反射鏡反射紫外線雷射之構
成,並藉由改變反射鏡之反射角度或使反射鏡移動而對貼片6之特定範圍照射紫外線。
對本發明之若干實施形態進行了說明,但該等實施形態係作為例子而提示,並不意圖限定發明之範圍。該等新穎之實施形態能以其他各種方式實施,且於不脫離發明主旨之範圍內可進行各種省略、替換、變更。該等實施形態及其變化包含於發明之範圍及主旨,且包含於申請專利範圍所記載之發明及其均等之範圍。
2‧‧‧元件形成部
3‧‧‧剝離層
4‧‧‧支持基板(第2基板)
5‧‧‧接著層
6‧‧‧貼片
6a‧‧‧硬化部
7‧‧‧環狀框
Claims (6)
- 一種半導體裝置之製造方法,其具有以下步驟:於第1基板之背面側貼附貼片,上述第1基板係於表面之外周部具有接著層之一部分,隔著上述接著層及剝離層而設置有第2基板,且形成有半導體元件,上述貼片塗佈有接著強度會因紫外線照射而降低之接著劑;自上述貼片之背面對設置於上述第1基板之外周部之上述接著劑之部分照射紫外線而使接著強度降低;及於接著強度降低之上述接著劑之部分及上述剝離層之部分,將貼附於上述貼片之狀態下之上述第1基板剝離。
- 如請求項1之半導體裝置之製造方法,其中於自上述貼片之背面照射上述紫外線之步驟中,係對自上述剝離層之外周部起特定之範圍內照射上述紫外線。
- 如請求項1之半導體裝置之製造方法,其中於設置上述第2基板之前,實施將形成有上述半導體元件之晶片分離之切晶步驟。
- 如請求項1之半導體裝置之製造方法,其中於自上述貼片之背面照射上述紫外線之步驟中,亦照射上述第1基板之外周部。
- 如請求項1之半導體裝置之製造方法,其中於設置上述第2基板之前,實施將形成有上述半導體元件之表面部之外周部分以特定深度去除之步驟。
- 一種半導體製造裝置,其係用於如請求項1至5中任一項所述之半導體裝置之製造方法中進行上述紫外線之照射者,且具備:旋轉支持部,其可旋轉地支持將上述第1基板貼合於上述第2基 板之狀態下之基板;及紫外線光源,其於利用上述旋轉支持部使上述第1基板及第2基板旋轉之狀態下,藉由雷射光而自上述貼片之背面照射上述紫外線。
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