JP2005252072A - 素子の実装方法及び搬送装置 - Google Patents

素子の実装方法及び搬送装置 Download PDF

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Publication number
JP2005252072A
JP2005252072A JP2004062245A JP2004062245A JP2005252072A JP 2005252072 A JP2005252072 A JP 2005252072A JP 2004062245 A JP2004062245 A JP 2004062245A JP 2004062245 A JP2004062245 A JP 2004062245A JP 2005252072 A JP2005252072 A JP 2005252072A
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Prior art keywords
transfer substrate
semiconductor chip
circuit board
dicing sheet
mounting method
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JP2004062245A
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English (en)
Inventor
Kazuhiko Suzuki
和彦 鈴木
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2004062245A priority Critical patent/JP2005252072A/ja
Priority to US11/054,413 priority patent/US20050196901A1/en
Priority to CN2005100525532A priority patent/CN1665004A/zh
Publication of JP2005252072A publication Critical patent/JP2005252072A/ja
Pending legal-status Critical Current

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Abstract

【課題】 素子を回路基板上に容易に実装する。
【解決手段】 ダイシングシート上でダイシングされると共に非ダイシングシート側の面に接続端子１１が形成された素子１を、接着剤が塗布された転写基板に一括して転写する工程と、上記転写基板から各素子１をピックアップして回路基板２上に実装する工程とを含む。
【選択図】 図１

Description

本発明は、素子の実装方法及び搬送装置に関するものである。
従来、半導体チップ等の素子を回路基板に実装する場合には、例えば半導体チップに凸形状の導電部材からなるバンプ（接続端子）を設け、そのバンプを回路基板に接合することで半導体チップを回路基板に接合している（例えば、特許文献１参照）。
このような半導体チップは、例えばシリコンなどの半導体ウエハをダイジングシート上でダイシングすることにより分割形成される。そして、各半導体チップは、真空吸引口を持つフェースダウンボンダのヘッドなどに吸着・保持されハンドリングされて、ステージ上に固定された回路基板にボンディングされる。
特開２０００−１２４２４５号公報
しかしながら、通常、半導体チップのバンプは、半導体ウエハの非ダイシングシート側に形成されているため、半導体チップを基板上にボンディングする際には、まず、半導体チップをピックアップして所定のトレー等にバンプ形成面を下にして収納し、その後、トレーから半導体チップを吸着・保持して回路基板に実装している。このため、半導体チップのバンプがトレーと接触し傷つく場合があった。また、従来の実装方法においては、半導体チップをピックアップして所定のトレー等に収納する際に、手作業あるいは反転機構を有するハンドラ等を用いているが、例えば、半導体チップが微小（例えば、縦横０．５ｍｍ程度）の場合には、そのハンドリングが困難となり、半導体チップの収納に失敗する場合があった。
本発明は、上述する問題点に鑑みてなされたもので、素子を回路基板上に容易に実装することを目的とする。
上記目的を達成するために、本発明に係る素子の実装方法は、ダイシングシート上でダイシングされると共に非ダイシングシート側の面に接続端子が形成された素子を、接着剤が塗布された転写基板に一括して転写する工程と、上記転写基板から各素子をピックアップして回路基板上に実装する工程とを含むことを特徴とする。
このような特徴を有する本発明に係る素子の実装方法によれば、ダイシングシート上においてダイシングされた素子が接着剤を塗布された転写基板に転写された後に、当該転写基板からピックアップされて回路基板上に実装される。このため、本発明に係る素子の実装方法によれば、転写基板を反転させることによって、容易に素子を一括して反転させることができるため、素子を転写基板からピックアップして回路基板上に実装するまでの間に、各素子ごとに反転させる必要がなくなる。したがって、素子を回路基板上に容易に実装することが可能となる。
また、本発明に係る素子の実装方法によれば、素子の接続端子が形成された面が接着剤と接触されるため、接続端子が傷つくことを防止することが可能となる。
また、本発明に係る素子の実装方法においては、上記接着剤が熱可塑性の樹脂であるという構成を採用することができる。
素子を転写基板からピックアップした際には、素子の接続端子に接着剤が付着した状態となる。このため、接着剤として熱可塑性の樹脂を用いることによって、接着剤を素子と回路基板との間に充填されるアンダーフィルとして用いることができる。
また、本発明に係る素子の実装方法においては、上記接着剤が半田であるという構成を採用することができる。
素子を転写基板からピックアップした際には、素子の接続端子に接着剤が付着した状態となる。このため、接着剤として半田を用いることによって、素子を回路基板に実装した際に、接続端子と回路基板との間に容易に金属間化合物を形成することが可能となる。
次に、本発明に係る搬送装置は、ダイシングシート上でダイシングされると共に非ダイシングシート側の面に接続端子が形成された素子を所定箇所に搬送する搬送装置であって、接着剤が塗布されると共に上記ダイシングシート上から上記素子を一括して転写される転写基板と、当該転写基板を搬送する転写基板搬送手段とを備えることを特徴とする。
このような本発明に係る搬送装置によれば、ダイシングシート上でダイシングされた素子を一括して転写基板に転写し、その転写基板を搬送する。このため、搬送された転写基板から各素子をピックアップして回路基板上に実装することによって、容易に素子を回路基板上に実装することが可能となる。
また、本発明に係る搬送装置は、上記転写基板を反転する転写基板反転手段を備えることが好ましい。
このように転写基板反転手段を備えることによって、転写基板を反転して搬送することができるため、より容易に素子を回路基板上に実装することが可能となる。
以下、図面を参照して、本発明に係る素子の実装方法及び搬送装置の一実施形態について説明する。なお、以下の図において、各部材を認識可能な大きさとするために、各部材の縮尺を適宜変更している。
（第１実施形態）
図１は、微小半導体チップ１（素子）が実装された回路基板２の全体構成を示す概略図である。この図に示すように、微小半導体チップ１には、一方側の面にバンプ１１（接続端子）が複数形成されており、各バンプ１１が回路基板２の導電部２１と接続されている。そして、微小半導体チップ１と回路基板２との間には、バンプ１１を保護するためのアンダーフィル３が配置されており、このアンダーフィル３は熱可塑性の樹脂によって形成されている。なお、微小半導体チップ１としては、例えば、縦横０．５ｍｍ程度の面発光レーザが用いられる。
次ぎに、このような微小半導体チップ１を回路基板２に実装するための実装方法について説明する。
まず、図２（ａ）に示すように、シリコン等からなる半導体ウエハ４を紫外線硬化樹脂が塗布されたダイシングシート５上に配置し、この半導体ウエハ４をダイヤモンドブレードやレーザによって複数に分割することによって、微小半導体チップ１を形成する。その後、図２（ｂ）に示すように、紫外線を照射することによって紫外線硬化樹脂の接着力を低下させる。なお、半導体ウエハ４の非ダイシングシート側の面には、各微小半導体チップ１に対応するバンプ１１が予め複数形成されている。また、半導体ウエハ４には、各種半導体素子及び電子回路等が予め形成されている。
続いて、図２（ｃ）に示すように、ダイシングシート５上の半導体ウエハ４に対して加熱した転写基板６を押圧する。この転写基板６の一方側の面には、図３に示すように、熱可塑性の樹脂７が均一に塗布されている。そして、転写基板６は、熱可塑性の樹脂７が塗布された面を半導体ウエハ４に対して押圧される。なお、転写基板６は、剛性を有する部材によって形成されていることが好ましく、例えばセラミックスによって形成することができる。また、転写基板６に塗布される熱可塑性の樹脂７の厚みｄは、各微小半導体チップ１が有するバンプ１１の高さｈよりも厚いことが好ましい。このように、熱可塑性の樹脂７の厚みｄをバンプ１１の高さｈよりも厚くすることによって、バンプ１１が転写基板６と直接接触することを防止することができるため、バンプ１１が傷つくことを防止することができる。
その後、転写基板６を冷却することによって、熱可塑性の樹脂７を硬化させ、ダイシングシート５と転写基板６とを解離することによって、図４（ｄ）に示すように、一括して微小半導体チップ１をダイシングシート５から転写基板６に転写する。なお、ここで、上述のように、ダイシングシート５に紫外線が照射されることによって、ダイシングシート５上に塗布された紫外線硬化樹脂の接着力が低下されているため、微小半導体チップ１は、容易に転写基板６に転写される。
そして、微小半導体チップ１が一括して転写された転写基板６は、反転された後、微小半導体チップ１を回路基板２に実装するボンディング装置に搬送される。このように、微小半導体チップ１が一括して転写された転写基板６を反転させることは、各微小半導体チップ１を反転させることに比べて非常に容易であり、また失敗する可能性が極めて低い。このため、本実施形態に係る素子の実装方法によれば、確実に微小半導体チップ１を反転させることができる。
続いて、転写基板６に転写された各微小半導体チップ１は、ボンディング装置が備えるヘッド８によって回路基板２に実装される。このヘッド８は、微小半導体チップ１を真空吸着することによって保持するものであり、真空吸着機構及び加熱機構を有している。
そして、このようなヘッド８を図４（ｅ）に示すように、単一の微小半導体チップ１と接触させることによって、その微小半導体チップ１は、ヘッド８に吸着される。ここで、ヘッド８は、加熱機構を有しているため、ヘッド８がある微小半導体チップ１と接触することによって、その微小半導体チップ１の周囲の熱可塑性の樹脂７が軟化する。このため、微小半導体チップ１を容易に転写基板６から解離することができる。なお、微小半導体チップ１を転写基板６から解離した際には、図４（ｆ）に示すように、微小半導体チップ１には、熱可塑性の樹脂７がそのまま付着している。このように、本実施形態に係る素子の実装方法によれば、熱可塑性の樹脂７が塗布された転写基板６に微小半導体チップ１が転写されるため、微小半導体チップ１のバンプ１１をトレー等に直接接触させることがない。このため、バンプ１１が傷つくことを防止しつつ容易に微小半導体チップ１を反転させることができる。
その後、ヘッド８を回路基板２の所定位置上まで移動し、微小半導体チップ１を回路基板２に対して加熱・押圧することによって、微小半導体チップ１のバンプ１１と回路基板２の導電部２１とを接続させる。ここで、微小半導体チップ１に付着した熱可塑性の樹脂７は、ヘッド８の加熱機構によって加熱され軟化されているため、微小半導体チップ１を回路基板２に対して押圧することによって、容易に微小半導体チップ１のバンプ１１と回路基板２の導電部２１とを直接接触させることができる。
そして、ヘッド８を微小半導体チップ１から解離し、その後、熱可塑性の樹脂７を冷却することによって硬化させることによって、微小半導体チップ１が回路基板２上に実装される。また、熱可塑性の樹脂７は、硬化されることによって、そのままアンダーフィル３として用いられる。このように、転写基板６に塗布される接着剤として熱硬化性の樹脂７を用いることによって、微小半導体チップ１と回路基板２とを接合した後にアンダーフィルを微小半導体チップ１と回路基板２との間に充填する必要なくなる。
このように本第１実施形態に係る素子の実装方法によれば、ダイシングシート５上においてイシングされた微小半導体チップ１が熱可塑性の樹脂７を塗布された転写基板６に転写された後に、当該転写基板６からピックアップされて回路基板２上に実装される。このため、転写基板６を反転させることによって、容易に微小半導体チップ１を一括して反転させることができるため、微小半導体チップ１を転写基板６からピックアップして回路基板２上に実装するまでの間に、各微小半導体チップ１ごとに反転させる必要がなくなる。したがって、微小半導体チップ１を回路基板２上に容易に実装することが可能となる。
（第２実施形態）
次に、本発明の第２実施形態に係る素子の実装方法について説明する。なお、本第２実施形態の説明において、上記第１実施形態と同様の部分については、その説明を省略あるいは簡略化する。
なお、本第２実施形態に係る素子の実装方法は、転写基板６に塗布する接着剤として半田９を用いている点が上記第１実施形態と異なる。なお、本第２実施形態において用いられる半田９は、鉛フリー半田である。
本第２実施形態に係る素子の実装方法においては、 図５（ａ）に示すように、半田９が塗布された転写基板６をダイシングシート５上の半導体ウエハ４に対して押圧する。なお、転写基板６が半導体ウエハ４に対して押圧される際には、転写基板６が加熱されることによって、半田９は転写基板６を逆さにした際にこぼれない程度に軟化しているものとする。なお、転写基板６に塗布される半田９の厚みＤは、各微小半導体チップ１が有するバンプ１１の高さｈよりも薄いことが好ましい。このように、半田９の厚みｄをバンプ１１の高さｈよりも薄くすることによって、微小半導体チップの回路および隣接バンプ間の短絡を抑えることができる。このように、半田９が塗布された転写基板６を半導体ウエハ４に対して押圧することによって、バンプ１１の表面に金属間化合物が形成される。
その後、転写基板６を冷却することによって、半田９を硬化させ、ダイシングシート５と転写基板６とを解離することによって、図５（ｂ）に示すように、一括して微小半導体チップ１をダイシングシート５から転写基板６に転写する。そして、微小半導体チップ１が一括して転写された転写基板６は、反転された後、微小半導体チップ１を回路基板２に実装するボンディング装置に搬送される。
そして、ヘッド８を図５（ｃ）に示すように、単一の微小半導体チップ１と接触させることによって、その微小半導体チップ１は、ヘッド８に吸着される。ここで、ヘッド８は、加熱機構を有しているため、ヘッド８がある微小半導体チップ１と接触することによって、その微小半導体チップ１の周囲の半田９が軟化する。このため、微小半導体チップ１を容易に転写基板６から解離することができる。なお、微小半導体チップ１を転写基板６から解離した際には、微小半導体チップ１のバンプ１１の表面には、金属間化合物が形成されている。
その後、ヘッド８を回路基板２の所定位置上まで移動し、微小半導体チップ１を回路基板２に対して加熱・押圧することによって、微小半導体チップ１のバンプ１１と回路基板２の導電部２１とを接続させる。
そして、ヘッド８を微小半導体チップ１から解離し、その後、微小半導体チップ１と回路基板２との間にアンダーフィル３を充填することで、微小半導体チップ１が回路基板２上に実装される。
このような本第２実施形態に係る素子の実装方法によれば、上記第１実施形態に係る素子の実装方法と同様に、転写基板６を反転させることによって、容易に微小半導体チップ１を一括して反転させることができるため、微小半導体チップ１を転写基板６からピックアップして回路基板２上に実装するまでの間に、各微小半導体チップ１ごとに反転させる必要がなくなり、微小半導体チップ１を回路基板２上に容易に実装することが可能となる。
（第３実施形態）
次に、本発明の第３実施形態として、上記第１あるいは第２実施形態において用いられる搬送装置について説明する。
図６は、本第３実施形態に係る搬送装置１００の制御系を表したブロック図である。本第３実施形態に係る搬送装置１００は、上記第１及び第２実施形態において示した転写基板６と、当該転写基板６を搬送する転写基板搬送装置１１０（転写基板搬送手段）と、転写基板６を反転する転写基板反転装置１２０（転写基板反転手段）と、転写基板搬送装置１１０及び転写基板反転装置１２０を制御する制御装置１３０とを備えて構成されており、図６に示すように、転写基板搬送装置１１０と転写基板反転装置１２０との各々が制御装置１３０と電気的に接続されている。なお、本実施形態に係る搬送装置１００を上記第１実施形態に係る素子の実装方法に用いる場合には、転写基板６に熱可塑性の樹脂７が塗布され、本実施形態に係る搬送装置１００を上記第２実施形態に係る素子の実装方法に用いる場合には、転写基板６に半田９が塗布される。
そして、制御装置１３０は、転写基板６を半導体ウエハ４に押圧する場合には、転写基板搬送装置１１０によって転写基板６を半導体ウエハ４上に移動（搬送）し、その後、再び転写基板搬送装置１１０によって転写基板６を半導体ウエハ４に対して押圧するように移動（搬送）する。
続いて、制御装置１３０は、転写基板搬送装置１１０によって転写基板６を半導体ウエハ４が載置されたダイシングシート５から解離する。その後、制御装置１３０は、転写基板反転装置１２０によって転写基板６を反転してから、上記第１及び第２実施形態において示したボンディング装置に転写基板６を転写基板搬送装置１１０を用いて搬送する。
このような本第３実施形態に係る搬送装置１００によれば、転写基板６と当該転写基板６を搬送する転写基板搬送装置１１０とを備えているため、転写基板６に各微小半導体チップ１を容易に転写し、さらにボンディング装置に搬送することができる。
また、本第３実施形態に係る搬送装置１００によれば、転写基板反転装置１２０を備えているため、各微小半導体チップ１が転写された転写基板６を反転してボンディング装置に搬送することができる。
以上、添付図面を参照しながら本発明に係る素子の実装方法及び搬送装置の好適な実施形態について説明したが、本発明は上記実施形態に限定されないことは言うまでもない。上述した実施形態において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。
例えば、転写基板６の接着剤塗布領域を仕切板等によって、複数の領域に分割するようにしても良い。このように、転写基板６の接着剤塗布領域を複数領域に分割することによって、例えば接着剤として熱可塑性の樹脂を用いた場合には、バンプ１１に付着する熱可塑性の樹脂の量を容易に調整することが可能となる。
微小半導体チップ１が実装された回路基板２の全体構成を示す概略図である。 本発明の第１実施形態に係る素子の実装方法について説明するための図である。 転写基板６の斜視図である。 本発明の第１実施形態に係る素子の実装方法について説明するための図である。 本発明の第２実施形態に係る素子の実装方法について説明するための図である。 本発明の第３実施形態に係る搬送装置１００の制御系を示したブロック図である。
符号の説明
１……微小半導体チップ（素子）、１１……バンプ（接続端子）、２……回路基板、２１……導電部、３……アンダーフィル、４……半導体ウエハ、５……ダイシングシート、６……転写基板、７……熱可塑性の樹脂、８……ヘッド、９……半田、１００……搬送装置、１１０……転写基板搬送装置（転写基板搬送手段）、１２０……転写基板反転装置（転写基板反転手段）、１３０……制御装置


Claims (5)

  1. ダイシングシート上でダイシングされると共に非ダイシングシート側の面に接続端子が形成された素子を、接着剤が塗布された転写基板に一括して転写する工程と、
    前記転写基板から各素子をピックアップして回路基板上に実装する工程と
    を含むことを特徴とする素子の実装方法。
  2. 前記接着剤は、熱可塑性の樹脂であることを特徴とする請求項１記載の素子の実装方法。
  3. 前記接着剤は、半田であることを特徴とする請求項１記載の素子の実装方法。
  4. ダイシングシート上でダイシングされると共に非ダイシングシート側の面に接続端子が形成された素子を所定箇所に搬送する搬送装置であって、
    接着剤が塗布されると共に前記ダイシングシート上から前記素子を一括して転写される転写基板と、
    当該転写基板を搬送する転写基板搬送手段と
    を備えることを特徴とする搬送装置。
  5. 前記転写基板を反転する転写基板反転手段を備えることを特徴とする請求項４記載の搬送装置。


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JP2007208129A (ja) * 2006-02-03 2007-08-16 Citizen Electronics Co Ltd 表面実装型発光素子の製造方法
JP2016062959A (ja) * 2014-09-16 2016-04-25 株式会社東芝 基板分離方法および半導体製造装置

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KR100888195B1 (ko) * 2007-08-06 2009-03-12 한국과학기술원 능동소자가 내장된 유기기판 제조방법
US20120273935A1 (en) * 2011-04-29 2012-11-01 Stefan Martens Semiconductor Device and Method of Making a Semiconductor Device
US9418895B1 (en) * 2015-03-14 2016-08-16 International Business Machines Corporation Dies for RFID devices and sensor applications
CN110838462B (zh) * 2018-08-15 2022-12-13 北科天绘(合肥)激光技术有限公司 一种器件阵列的巨量转移方法及系统

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JP2007208129A (ja) * 2006-02-03 2007-08-16 Citizen Electronics Co Ltd 表面実装型発光素子の製造方法
JP4745073B2 (ja) * 2006-02-03 2011-08-10 シチズン電子株式会社 表面実装型発光素子の製造方法
JP2016062959A (ja) * 2014-09-16 2016-04-25 株式会社東芝 基板分離方法および半導体製造装置
US10199253B2 (en) 2014-09-16 2019-02-05 Toshiba Memory Corporation Method for manufacturing semiconductor devices through peeling using UV-ray

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