TWI584376B - Plasma processing device - Google Patents

Plasma processing device Download PDF

Info

Publication number
TWI584376B
TWI584376B TW104130143A TW104130143A TWI584376B TW I584376 B TWI584376 B TW I584376B TW 104130143 A TW104130143 A TW 104130143A TW 104130143 A TW104130143 A TW 104130143A TW I584376 B TWI584376 B TW I584376B
Authority
TW
Taiwan
Prior art keywords
light
intensity
wavelengths
detected
wavelength
Prior art date
Application number
TW104130143A
Other languages
English (en)
Chinese (zh)
Other versions
TW201628086A (zh
Inventor
中元茂
臼井建人
井上智己
福地功祐
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201628086A publication Critical patent/TW201628086A/zh
Application granted granted Critical
Publication of TWI584376B publication Critical patent/TWI584376B/zh

Links

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW104130143A 2015-01-19 2015-09-11 Plasma processing device TWI584376B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015007360 2015-01-19
JP2015113580A JP6560909B2 (ja) 2015-01-19 2015-06-04 プラズマ処理方法およびプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201628086A TW201628086A (zh) 2016-08-01
TWI584376B true TWI584376B (zh) 2017-05-21

Family

ID=56513113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130143A TWI584376B (zh) 2015-01-19 2015-09-11 Plasma processing device

Country Status (3)

Country Link
JP (1) JP6560909B2 (enExample)
KR (1) KR101750001B1 (enExample)
TW (1) TWI584376B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10215704B2 (en) * 2017-03-02 2019-02-26 Tokyo Electron Limited Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing
US10319649B2 (en) * 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP6832800B2 (ja) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP7630371B2 (ja) * 2021-06-21 2025-02-17 東京エレクトロン株式会社 測定方法および測定装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030085198A1 (en) * 2001-11-08 2003-05-08 Yi Hun Jung Method of detecting etching process end point in semiconductor fabricating equipment and detector therefor
US20040175913A1 (en) * 2003-02-14 2004-09-09 David Johnson End point detection in time division multiplexed etch processes
US20080261335A1 (en) * 2006-10-30 2008-10-23 Michael Grimbergen Endpoint detection for photomask etching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128823A (en) * 1981-02-02 1982-08-10 Shimadzu Corp Spectrum measuring device
JPS6111622A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 分光光度計
JP3217581B2 (ja) * 1994-02-25 2001-10-09 東京エレクトロン株式会社 エッチング終点検出方法
WO1999040617A1 (en) * 1998-02-03 1999-08-12 Tokyo Electron Yamanashi Limited End point detecting method for semiconductor plasma processing
TW560080B (en) * 2002-09-12 2003-11-01 Winbond Electronics Corp A method for detecting the end point of plasma etching process by using matrix
JP2009231718A (ja) * 2008-03-25 2009-10-08 Renesas Technology Corp ドライエッチング終点検出方法
JP5458693B2 (ja) 2009-06-26 2014-04-02 凸版印刷株式会社 終点検出装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030085198A1 (en) * 2001-11-08 2003-05-08 Yi Hun Jung Method of detecting etching process end point in semiconductor fabricating equipment and detector therefor
US20040175913A1 (en) * 2003-02-14 2004-09-09 David Johnson End point detection in time division multiplexed etch processes
US20080261335A1 (en) * 2006-10-30 2008-10-23 Michael Grimbergen Endpoint detection for photomask etching

Also Published As

Publication number Publication date
TW201628086A (zh) 2016-08-01
KR20160089262A (ko) 2016-07-27
KR101750001B1 (ko) 2017-06-22
JP2016136607A (ja) 2016-07-28
JP6560909B2 (ja) 2019-08-14

Similar Documents

Publication Publication Date Title
TWI584376B (zh) Plasma processing device
KR100304288B1 (ko) 플라즈마처리의종점검출방법및그장치
JP6837886B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP6033453B2 (ja) 多変量解析を用いたプラズマエンドポイント検出
US9865439B2 (en) Plasma processing apparatus
TWI615901B (zh) 電漿處理裝置及電漿處理方法
TWI528452B (zh) Plasma processing device and plasma processing method
CN106024616B (zh) 等离子处理装置以及等离子处理方法
JP4833687B2 (ja) プラズマ処理装置
KR20090106656A (ko) 플라즈마 에칭 프로세스의 프로세스 파라미터를 측정하는 방법 및 장치
JP5883769B2 (ja) プラズマ処理装置およびプラズマ処理方法
JPH04196529A (ja) プラズマ処理装置
JP6804694B1 (ja) エッチング処理装置、エッチング処理方法および検出器
JP5411215B2 (ja) プラズマ処理装置
JP4943716B2 (ja) プラズマ処理装置
US20210249317A1 (en) Plasma processing method and wavelength selection method used in plasma processing
TW201314753A (zh) 等離子體刻蝕工藝的終點監控方法
JP6177513B2 (ja) プラズマ処理装置
JP3884894B2 (ja) プラズマエッチング処理装置
JPH06318572A (ja) プラズマ処理の終点検出方法およびその装置
JP2014082338A (ja) プラズマ処理装置及びプラズマ処理方法
TWI894507B (zh) 在低開放區域及/或高深寬比蝕刻應用中的終點偵測
JPH0529276A (ja) ドライエツチング方法
JP2001059193A (ja) X線マスクの製造方法およびその装置
JP3885060B2 (ja) プラズマエッチング処理方法