TWI584353B - 磊晶矽晶圓及固體攝影元件的製造方法 - Google Patents

磊晶矽晶圓及固體攝影元件的製造方法 Download PDF

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Publication number
TWI584353B
TWI584353B TW105104898A TW105104898A TWI584353B TW I584353 B TWI584353 B TW I584353B TW 105104898 A TW105104898 A TW 105104898A TW 105104898 A TW105104898 A TW 105104898A TW I584353 B TWI584353 B TW I584353B
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TW
Taiwan
Prior art keywords
wafer
epitaxial
ingot
germanium
cop
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TW105104898A
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English (en)
Chinese (zh)
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TW201620016A (zh
Inventor
門野武
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勝高股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Vapour Deposition (AREA)
TW105104898A 2012-11-13 2013-11-12 磊晶矽晶圓及固體攝影元件的製造方法 TWI584353B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012249244A JP5776670B2 (ja) 2012-11-13 2012-11-13 エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法

Publications (2)

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TW201620016A TW201620016A (zh) 2016-06-01
TWI584353B true TWI584353B (zh) 2017-05-21

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TW105104898A TWI584353B (zh) 2012-11-13 2013-11-12 磊晶矽晶圓及固體攝影元件的製造方法
TW102141073A TWI585826B (zh) 2012-11-13 2013-11-12 磊晶矽晶圓的製造方法及固體攝影元件的製造方法

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TW102141073A TWI585826B (zh) 2012-11-13 2013-11-12 磊晶矽晶圓的製造方法及固體攝影元件的製造方法

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Country Link
US (2) US9117676B2 (enExample)
JP (1) JP5776670B2 (enExample)
TW (2) TWI584353B (enExample)

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KR101991882B1 (ko) * 2011-05-13 2019-06-21 가부시키가이샤 사무코 반도체 에피택셜 웨이퍼의 제조 방법, 반도체 에피택셜 웨이퍼, 및 고체 촬상 소자의 제조 방법
JP5776669B2 (ja) 2012-11-13 2015-09-09 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法
JP6531729B2 (ja) * 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6299835B1 (ja) * 2016-10-07 2018-03-28 株式会社Sumco エピタキシャルシリコンウェーハおよびエピタキシャルシリコンウェーハの製造方法
JP6724852B2 (ja) * 2017-04-19 2020-07-15 株式会社Sumco エピタキシャルシリコンウェーハのエピタキシャル層厚の測定方法、及びエピタキシャルシリコンウェーハの製造方法
JP6852703B2 (ja) * 2018-03-16 2021-03-31 信越半導体株式会社 炭素濃度評価方法
JP7207204B2 (ja) * 2019-07-02 2023-01-18 信越半導体株式会社 炭素ドープシリコン単結晶ウェーハの製造方法
CN115989562B (zh) * 2020-08-26 2025-08-05 胜高股份有限公司 外延硅晶片及其制造方法以及半导体器件的制造方法
KR20250133738A (ko) * 2023-02-22 2025-09-08 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼 및 그 제조 방법, 그리고 반도체 디바이스의 제조 방법
WO2024226131A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Macrocell architectural structures for heat exchange in epitaxial growth processing equipment

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JP3311004B2 (ja) * 1991-03-28 2002-08-05 株式会社東芝 固体撮像装置
JP3384506B2 (ja) * 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
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JP5010091B2 (ja) * 2003-11-13 2012-08-29 株式会社Ｓｕｍｃｏ 高抵抗シリコンウェーハ
US7259036B2 (en) * 2004-02-14 2007-08-21 Tel Epion Inc. Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
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JP5258757B2 (ja) * 2006-06-13 2013-08-07 セムイクウィップ・インコーポレーテッド イオンビーム装置およびイオン注入方法
JP2008294245A (ja) 2007-05-25 2008-12-04 Shin Etsu Handotai Co Ltd エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP2010040864A (ja) * 2008-08-06 2010-02-18 Sumco Corp エピタキシャルシリコンウェーハ及びその製造方法
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
JP5099023B2 (ja) 2009-01-27 2012-12-12 信越半導体株式会社 エピタキシャルウエーハの製造方法及び固体撮像素子の製造方法
JP2011054879A (ja) * 2009-09-04 2011-03-17 Sumco Corp 裏面照射型イメージセンサ用エピタキシャル基板およびその製造方法。
JP2011151318A (ja) * 2010-01-25 2011-08-04 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012059849A (ja) * 2010-09-08 2012-03-22 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびシリコンエピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
TWI585826B (zh) 2017-06-01
JP5776670B2 (ja) 2015-09-09
TW201620016A (zh) 2016-06-01
US9117676B2 (en) 2015-08-25
US20160013278A1 (en) 2016-01-14
US9397172B2 (en) 2016-07-19
TW201426820A (zh) 2014-07-01
JP2014099451A (ja) 2014-05-29
US20140134780A1 (en) 2014-05-15

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