TWI583026B - A method of manufacturing a light-emitting device, and a substrate on which a light-emitting device is mounted - Google Patents
A method of manufacturing a light-emitting device, and a substrate on which a light-emitting device is mounted Download PDFInfo
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- TWI583026B TWI583026B TW103135402A TW103135402A TWI583026B TW I583026 B TWI583026 B TW I583026B TW 103135402 A TW103135402 A TW 103135402A TW 103135402 A TW103135402 A TW 103135402A TW I583026 B TWI583026 B TW I583026B
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- Prior art keywords
- light
- emitting device
- phosphor
- sealing member
- substrate
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- 239000000758 substrate Substances 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000007789 sealing Methods 0.000 claims description 122
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 120
- 239000011347 resin Substances 0.000 claims description 66
- 229920005989 resin Polymers 0.000 claims description 66
- 239000000565 sealant Substances 0.000 claims description 35
- 230000003213 activating effect Effects 0.000 claims description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 6
- 239000011572 manganese Substances 0.000 description 32
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 8
- 229920002675 Polyoxyl Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920002098 polyfluorene Polymers 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 102100032047 Alsin Human genes 0.000 description 3
- 101710187109 Alsin Proteins 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/617—Silicates
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/732—Location after the connecting process
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Description
本發明係關於一種發光裝置之製造方法。
將發光元件及螢光體組合而成之發光裝置作為期待低耗電、小型化、高亮度、進而廣範圍之顏色再現性之下一代發光裝置而引人注目,進行活躍之研究及開發。
例如,於專利文獻1(日本專利特開2010-157608號公報)中,記載有發光元件釋放出激發藍色螢光體及綠色螢光體,另一方面實質上不激發紅色螢光體之光。
於專利文獻2(日本專利特開2011-14697號公報)中,記載有使用發光元件之放射光,激發藍色螢光體、綠色螢光體及橙色螢光體。
[專利文獻1]日本專利特開2010-157608號公報(專利第5195415號)
[專利文獻2]日本專利特開2011-14697號公報
然而,要求提供具有於顯示器用途較佳之發光特性之發光裝置。本發明係鑒於該方面而成者,其目的在於提供一種具有於顯示器用途較佳之發光特性之發光裝置及其製造方法。
本發明之發光裝置具備基體、配置於基體之發光元件、及使發光元件密封之密封構件。密封構件至少包含粒子狀之紅色螢光體。紅色螢光體至少包含Mn4+賦活氟化物錯合物螢光體。密封構件之上表面至少於一部分具有凹凸部。
密封構件之上表面較佳為隨著自該密封構件之俯視周緣朝向該密封構件之俯視中央,位於發光元件側。紅色螢光體較佳為於密封構件中均勻地分散。
密封構件較佳為進而包含綠色螢光體。紅色螢光體較佳為相對於綠色螢光體,以質量比計,含有2倍以上且4倍以下。
密封構件較佳為進而含有密封樹脂。關於密封樹脂,其黏度較佳為2000(mPa‧s)以上且7000(mPa‧s)以下。
較佳為於基體形成俯視矩形之開口。構成開口之長邊之長度較佳為1mm以上且5mm以下,構成開口之短邊之長度較佳為0.05mm以上且0.8mm以下。包圍密封構件之基體之側壁之厚度較佳為0.02mm以上且0.06mm以下。
本發明之發光裝置之製造方法包括將發光元件固定於基體之步驟、及將固定於基體之發光元件以密封劑密封之密封步驟。密封步驟具有使密封劑自噴嘴噴出至發光元件之步驟。密封劑至少包含密封樹脂及紅色螢光體。關於密封樹脂,其黏度為2000(mPa‧s)以上且7000(mPa‧s)以下。紅色螢光體至少包含Mn4+賦活氟化物錯合物螢光體。
密封樹脂較佳為含有苯基聚矽氧樹脂。關於苯基聚矽氧樹脂,其黏度較佳為10000(mPa‧s)以上。
發光元件較佳為利用苯基聚矽氧系接著劑固定於基體。較佳為於密封步驟之前,使形成於基體之配線圖案與發光元件電性連接。
密封劑較佳為通過形成於基體之開口供給至發光元件。噴嘴之
內徑較佳為構成開口之短邊以下。
基體較佳為包含樹脂。發光元件較佳為設於引線框架。較佳為於密封步驟之後,於相鄰之發光元件之間切斷引線框架。
本發明可提供一種具有於顯示器用途較佳之發光特性之發光裝置。
10‧‧‧基體
11‧‧‧台部
12‧‧‧內引線部
13‧‧‧配線圖案
13a‧‧‧端面
14‧‧‧外引線部
15‧‧‧框體部
17‧‧‧凹部
17a‧‧‧內面
19‧‧‧指示部
50‧‧‧發光元件
51‧‧‧接著劑
53‧‧‧導電性線
60‧‧‧密封構件
61‧‧‧密封樹脂
63‧‧‧紅色螢光體
65‧‧‧綠色螢光體
70‧‧‧上表面
71‧‧‧凹凸部
80‧‧‧噴出裝置
81‧‧‧液室
85‧‧‧噴嘴
160‧‧‧密封劑
圖1(a)為本發明之一實施形態之發光裝置之俯視圖,(b)為圖1(a)所示之IB-IB線之剖面圖。
圖2為圖1(b)所示之區域II之放大圖。
圖3為圖1所示之基體之俯視圖。
圖4為表示本發明之一實施形態之發光裝置之製造方法之流程圖。
圖5為模式性地說明使密封劑噴出至發光元件之步驟之側面圖。
圖6(a)為觀察實施例3之發光裝置之上表面之圖像,(b)為觀察比較例3之發光裝置之上表面之圖像。
圖7為表示實施例3之發光裝置之發射光譜之圖表。
以下,對本發明之發光裝置及其製造方法使用圖式加以說明。再者,關於本發明之圖式,同一參照符號表示相同部分或相當部分。又,長度、寬度、厚度、深度等之尺寸關係為了圖式之明確化及簡略化而適當變更,並不表示實際之尺寸關係。
[發光裝置之構成]
圖1(a)為本發明之一實施形態之發光裝置之俯視圖,圖1(b)為圖1(a)所示之IB-IB線之剖面圖。圖2為圖1(b)所示之區域II之放大圖。圖3為圖1所示之基體10之俯視圖。本實施形態之發光裝置具備基體10、
配置於基體10之發光元件50、及將發光元件50密封之密封構件60。
<基體>
於基體10之上表面,形成有凹部17。以下,將基體10之中相當於凹部17之側壁之部分記為「框體部15」,將基體10之中較框體部15更下側記為「台部11」。
台部11較佳為包含樹脂,較佳為形成為板狀或箔狀。於台部11之上表面(凹部17之底面)配置有發光元件50,故台部11較佳為具有用以對發光元件50供給外部電力之配線圖案13。
配線圖案13之構成並無特別限定。例如,配線圖案13具有設於台部11之內部之內引線部12及設於台部11之外部之外引線部14,關於配線圖案13,內引線部12與外引線部14互相連接。內引線部12之至少一部分於台部11之上表面露出,於內引線部12中於台部11之上表面露出之部分,配置有發光元件50。藉由外引線部14,本實施形態之發光裝置連接於供安裝該發光裝置之基板(例如安裝基板)。此種配線圖案13較佳為包含導電性材料,例如,較佳為銀、鉑、金及銅之至少一者經鍍銀、鍍金及鍍銀鈀中至少一者鍍覆而構成。
再者,若使用引線框架作為台部11,則無需另外將配線圖案13設於台部11,故可以低成本提供小型且輕量之發光裝置。
框體部15以包圍配置於台部11之上表面之發光元件50之方式配置於台部11之上表面周緣,規定密封構件60之外形。框體部15可與台部11一體地形成,亦可藉由接著劑或固定構件等連接於台部11。
框體部15之厚度(包圍密封構件60之基體10之側壁之厚度)t較佳為0.01mm以上且0.07mm以下。若框體部15之厚度t為0.01mm以上,則可較高地維持發光強度。若框體部15之厚度t為0.07mm以下,則可使發光裝置小型化。更佳為框體部15之厚度t為0.02mm以上且0.06mm以下。
凹部17之開口(形成於基體10之開口)之形狀及其大小等並無特別限定。於凹部17之開口形成為俯視矩形之情形時,構成該開口之長邊之長度W1較佳為1mm以上且5mm以下,構成該開口之短邊之長度L1較佳為0.05mm以上且0.8mm以下(圖3)。藉此,可使密封劑160(參照圖5)不溢出而供給至凹部17。又,變得易於在密封構件60之上表面70形成凹凸部71。俯視下之凹部17之開口之角部可經倒角,亦可不進行倒角。「俯視」意指自發光元件50之上方觀察發光裝置之情形。
於俯視下之框體部15之外形為矩形之情形時,框體部15之長邊之長度W2較佳為框體部15之短邊之長度L2之3.57倍以上。藉此,變得易於在密封構件60之上表面70形成凹凸部71。不僅如此,由於可使框體部15之短邊變短,故本實施形態之發光裝置作為側面發光型之發光裝置尤其較佳。關於「側面發光型之發光裝置」,相對於光出射面為垂直之發光裝置之面安裝於具備驅動電路等電路之安裝基板。若使用此種發光裝置,則可提供顏色再現性進一步優異,且可實現更加薄型化之顯示器裝置等。
凹部17之內面17a較佳為位於相較於配線圖案13之端面13a更為框體部15之長邊方向外側(圖3)。藉此,可使框體部15之短邊變短,故可確保體積。又,可獲得台部11之上表面之內引線部12之佔有率,故而反射率提高。又,框體部15之上表面較佳為平坦。藉此,可防止黏度較高之密封劑向框體部15之外部漏出。所謂「凹部17之內面17a」,意指於凹部17之開口之短邊方向上延伸之凹部17之內面。所謂「配線圖案13之端面13a」,意指於凹部17之開口之短邊方向上延伸之配線圖案13之端面中位於凹部17之開口之長邊方向內側之端面。
此種框體部1較佳為包含耐熱性材料,較佳為例如包含耐熱性聚合物。又,較佳為於作為框體部15之上表面且具有單向極性之配線圖案13之附近,設置表示該極性(本實施形態中為陰極)之指示部19(圖
1(a)、圖3)。藉此,可不弄錯配線圖案13之極性而將外部電力供給至發光裝置。
再者,例如使用掃描式電子顯微鏡等,以高倍率之觀察像觀察晶格像,藉此,可估算框體部15之厚度t、上述W1、上述L1、上述W2及上述L2。
<發光元件>
較佳為發光元件50經由接著劑51固定於內引線部12,藉由導電性線53連接於內引線部12。接著劑51較佳為苯基聚矽氧系接著劑。藉此,可提供耐候性優異之發光裝置。苯基聚矽氧系接著劑意指包含源自苯基聚矽氧樹脂之成分之接著劑。「源自苯基聚矽氧樹脂之成分」意指自苯基聚矽氧樹脂去除1個以上之氫原子而成者。導電性線53較佳為包含低電阻之材料,更佳為包含金屬。
較佳為發光元件50為發出於波長為430~470nm(更佳為440~470nm)之藍色區域具有峰值波長之光(初級光)之發光元件。若自發光元件50發出之光之峰值波長為430nm以上,則可防止自發光裝置發出之光之藍色光之成分之貢獻變小,故可防止顯色性變差。又,若自發光元件50發出之光之峰值波長為470nm以下,則可防止自發光裝置發出之光之亮度降低。根據以上情況,若自發光元件50發出之光之峰值波長為430nm以上且470nm以下,則可獲得實用之發光裝置。例如,發光元件50較佳為包含氮化鎵(GaN)系半導體之發光元件,又,較佳為形成為俯視矩形。
<密封構件>
密封構件60較佳為以填充凹部17之方式設置。藉此,利用密封構件60將發光元件50密封。
於密封構件60之上表面70之至少一部分形成凹凸部71。如下述實施例所示般,本發明者等人確認,相對於在使用CaAlSiN3:Eu或
(Sr‧Ca)AlSiN3:Eu等紅色螢光體之情形時,不於密封構件之上表面形成凹凸部,於使用Mn4+賦活氟化物錯合物螢光體之情形時,於密封構件之上表面形成凹凸部。Mn4+賦活氟化物錯合物螢光體顯示出於顯示器用途較佳之發光特性(下文敍述),故可藉由研究密封構件60之上表面70之平坦性而判斷是否為作為顯示器用途之發光裝置較佳之發光裝置。藉此,可不進行密封構件60所含之紅色螢光體63之組成分析,而判斷是否為作為顯示器用途之發光裝置較佳之發光裝置。所謂「密封構件60之上表面70」,意指自基體10露出之密封構件60之面(於凹部17之開口露出之密封構件60之面)。
本發明者等人確認:凹部17之開口之大小越小,凹凸部71越容易於密封構件60之上表面70形成。該效果於構成凹部17之開口之長邊之長度L1為1mm以上且5mm以下,並且構成凹部17之開口之短邊之長度W1為0.05mm以上且0.8mm以下之情形時,變得顯著。
密封構件60之上表面70較佳為隨著自密封構件60之俯視周緣朝向密封構件60之俯視中央,位於發光元件50側。藉此,可使密封構件60之上表面70具有透鏡效果,故可使自發光元件50發出之光聚焦。更佳為俯視中央之密封構件60之上表面70相較於俯視周緣之密封構件60之上表面70向發光元件50側凹陷5μm左右。隨著凹部17之開口之大小變小,密封構件60之上表面70之凹陷量減小,於密封構件60之上表面70,向發光元件50側凹陷之區域變窄。若使用掃描式電子顯微鏡等以高倍率之觀察像觀察晶格像,則可估計密封構件60之上表面70是否隨著自俯視周緣朝向俯視中央位於發光元件50側。
此種密封構件60含有紅色螢光體63,較佳為進而含有密封樹脂61,進而較佳為進而含有綠色螢光體65。
(紅色螢光體)
紅色螢光體63為經自發光元件50發出之光激發,發出紅色光
者,至少包含Mn4+賦活氟化物錯合物螢光體。Mn4+賦活氟化物錯合物螢光體之發光峰值之中心波長為625nm~645nm(例如635nm),其發光峰值之半值寬為10nm左右。因此,Mn4+賦活氟化物錯合物螢光體顯示於顯示器用途較佳之發光特性,故而可將本實施形態之發光裝置較佳地用作顯示器用途之發光裝置。
然而,Mn4+賦活氟化物錯合物螢光體與先前之紅色螢光體(例如CaAlSiN3:Eu或(Sr‧Ca)AlSiN3:Eu)等相比發光效率較差。因此,較佳為藉由使Mn4+賦活氟化物錯合物螢光體之含量較先前之使用紅色螢光體情形更多,可防止使用Mn4+賦活氟化物錯合物螢光體所引起之紅色之色度之降低或紅色光之發光強度之降低。藉此,Mn4+賦活氟化物錯合物螢光體不均分佈於密封構件60之上表面70。Mn4+賦活氟化物錯合物螢光體形成為粒子狀,故而凹凸部71形成於密封構件60之上表面70之至少一部分。
所謂「Mn4+賦活氟化物錯合物螢光體形成為粒子狀」,意指Mn4+賦活氟化物錯合物螢光體之體積基準之中值粒徑為10μm以上且90μm以下。較佳為Mn4+賦活氟化物錯合物螢光體之體積基準之中值粒徑為20μm以上且50μm以下。「紅色螢光體63之體積基準之中值粒徑」意指以體積基準測定紅色螢光體之粒度分佈時之中值粒徑,例如使用流程式粒子像分析裝置等進行測定。
Mn4+賦活氟化物錯合物螢光體例如為K2SiF6:Mn。關於K2SiF6:Mn,K之一部分或全部可經Li、Na及NH4中之1者以上取代。
關於Mn4+賦活氟化物錯合物螢光體之賦活元素,較佳為Mn(錳)為100%。然而,Mn4+賦活氟化物錯合物螢光體亦可於相對於賦活元素之總量未達10莫耳%之範圍內,進而含有Ti、Zr、Ge、Sn、Al、Ga、B、In、Cr、Fe、Co、Ni、Cu、Nb、Mo、Ru、Ag、Zn及Mg之至少一種作為賦活元素。關於賦活元素,較佳為佔有於母體結晶(例
如K2SiF6)中Si應占之部位(Si部位)之0.5%~10%。於母材結晶中,Si部位之10%以下亦可經賦活元素以外之元素取代。佔據晶格間位置之金屬元素(例如Mn)亦可添加至母體結晶。
再者,關於紅色螢光體63,亦可於不阻礙本實施形態之效果之範圍內,進而含有與Mn4+賦活氟化物錯合物螢光體不同之紅色螢光體(例如,CaAlSiN3:Eu或(Sr‧Ca)AlSiN3:Eu)。Mn4+賦活氟化物錯合物螢光體較為昂貴。因此,紅色螢光體63進而含有與Mn4+賦活氟化物錯合物螢光體不同之紅色螢光體,適於低價版之顏色再現性優異之發光裝置。
(密封樹脂)
密封樹脂61之黏度較佳為2000(mPa‧s)以上且7000(mPa‧s)以下。藉此,可量產發光裝置。又,凹凸部71將易於形成於密封構件60之上表面70。
密封樹脂61較佳為至少含有苯基聚矽氧樹脂。藉此,密封樹脂61之黏度成為2000(mPa‧s)以上且7000(mPa‧s)以下。密封樹脂61更佳為含有黏度為5000(mPa‧s)以上之苯基聚矽氧樹脂,進而較佳為含有黏度為10000(mPa‧s)以上之苯基聚矽氧樹脂。若苯基聚矽氧樹脂之黏度為5000(mPa‧s)以上,則密封樹脂61之黏度易於成為2000(mPa‧s)以上且7000(mPa‧s)以下。再者,由於難以取得黏度較40000(mPa‧s)大之苯基聚矽氧樹脂,故苯基聚矽氧樹脂之黏度較佳為40000(mPa‧s)以下。
若密封樹脂61之黏度成為2000(mPa‧s)以上且7000(mPa‧s)以下,則密封樹脂61可進而含有黏度未達5000(mPa‧s)之苯基聚矽氧樹脂,亦可進而含有與苯基聚矽氧樹脂不同之樹脂(例如有機改性聚矽氧樹脂)。「密封樹脂61之黏度」及「苯基聚矽氧樹脂之黏度」意指依據JIS Z 8803:2011(液體之黏度測定方法)而測定之值。
(綠色螢光體)
綠色螢光體65為經自發光元件50發出之光激發,發出綠色光者。例如,綠色螢光體65較佳為(Ba,Sr,Ca,Mg)2SiO4:Eu、(Mg,Ca,Sr,Ba)Si2O2N2:Eu、(Ba,Sr)3Si6O12N2:Eu、Eu賦活β-賽隆、(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu、(Y,Tb)3(Al,Ga)5O12:Ce、Ca3(Sc,Mg,Na,Li)2Si3O12:Ce、或(Ca,Sr)Sc2O4:Ce等。該等僅為綠色螢光體65之一例,綠色螢光體65並不限定於該等。
(調配量)
紅色螢光體63較佳為相對於綠色螢光體65,以質量比計,含有2倍以上且5倍以下。若相對於綠色螢光體65,以質量比計含有2倍以上之紅色螢光體63,則凹凸部71變得易於形成於密封構件60之上表面70。又,可防止因使用發光效率不優異之Mn4+賦活氟化物錯合物螢光體所引起之紅色之色度之降低或紅色光之發光強度之降低。若相對於綠色螢光體65,以質量比計含有5倍以下之紅色螢光體63,則可防止自發光裝置發出之光之紅色光之成分之貢獻變得過大。更佳為相對於綠色螢光體65,以質量比計含有2倍以上且4倍以下之紅色螢光體63。
再者,於不阻礙本實施形態之效果之範圍內,密封構件60亦可進而含有SiO2、TiO2、ZrO2、Al2O3、及Y2O3中之至少1種。
<動作>
若外部電力經由配線圖案13供給至發光元件50,則發光元件50發出藍色光。該藍色光之一部分由紅色螢光體63吸收,波長轉換為紅色光,釋放出至密封構件60之外。剩餘藍色光之一部分由綠色螢光體65吸收,波長轉換為綠色光,釋放出至密封構件60之外。剩餘藍色光不由紅色螢光體63,亦不由綠色螢光體65吸收,而釋放出至密封構件60之外。以如此方式,紅色光、綠色光及藍色光同時釋放出至密封構件60之外,故而會自本實施形態之發光裝置釋放出白色光。
[發光裝置之製造方法]
圖4為表示本實施形態之發光裝置之製造方法之一例之流程圖。本實施形態之發光裝置之製造方法包括:將發光元件50固定於基體10之步驟(步驟S100)、及將固定於基體10之發光元件50以密封劑160密封之密封步驟(步驟S300)。較佳為於密封步驟之前,使形成於基體10之配線圖案13與發光元件50電性連接(步驟S200)。較佳為於密封步驟之後,進行單片化步驟(步驟S400)。再者,以下表示將發光元件密封後進行單片化處理,製造發光裝置,但若為同一構件,則單片化處理前與單片化處理後附上同一元件符號。
<發光元件之固定>
(發光元件之配置)
首先,於步驟S101中,使發光元件50互相隔開間隔配置於基體10。例如,使發光元件50分別夾著接著劑51而配置於內引線部12。
(接著劑之硬化)
其次,於步驟S102中,使接著劑51硬化。較佳為使配置有發光元件50之基體10保持為特定之時間、特定之溫度。藉此,發光元件50分別固定於內引線部12。
<發光元件與配線圖案之電性連接>
於步驟S200中,使用導電性線53使發光元件50分別與內引線部12電性連接。
<發光元件之密封>
(密封劑之製備)
首先,於步驟S301中,製備密封劑160。製備之密封劑160含有紅色螢光體63,較佳為進而含有密封樹脂61,更佳為進而含有綠色螢光體65。
(密封劑之噴出)
其次,於步驟S302中,使用噴出裝置80使密封劑160噴出至各發光元件50。圖5為模式性地說明本步驟之側面圖。可按照如下所示之順序進行本步驟。將噴出裝置80配置於凹部17之開口之上方,將密封劑160投入至該噴出裝置80之液室81。若於該狀態下以活塞(未圖示)推壓液室81內之密封劑160,則密封劑160自噴嘴85噴出,通過凹部17之開口供給至發光元件50,被覆發光元件50。
紅色螢光體63之含量較先前之使用紅色螢光體之情形更多,Mn4+賦活氟化物錯合物螢光體之體積基準之中值粒徑為10μm以上且90μm以下。因此,若使用紅色螢光體63,則與先前之使用紅色螢光體之情形相比,紅色螢光體63變得易於堵塞於噴嘴85之前端及噴嘴85之內部。
然而,若密封樹脂61之黏度為2000(mPa‧s)以上,則可使紅色螢光體63及綠色螢光體65不堵塞於噴嘴85之前端及噴嘴85之內部而向發光元件50噴出。因此,於使用紅色螢光體63之情形時將密封樹脂61之黏度設為2000(mPa‧s)以上非常有效。又,若密封樹脂61之黏度為7000(mPa‧s)以下,則可防止噴出所需之時間變得過長。
所使用之噴出裝置80只要為用以使樹脂噴出之裝置即可,其構成不限定於圖5所示之構成。
噴嘴85之形狀及其大小等並無特別限定,噴嘴85之內徑較佳為構成凹部17之開口之短邊以下。藉此,可使密封劑160不溢出而供給至凹部17。更佳為噴嘴85之外徑為構成凹部17之開口之短邊以下。例如,噴嘴85之內徑較佳為0.2mm以上,噴嘴85之外徑較佳為0.4mm以下。
(硬化)
繼而,於步驟S303中,使密封劑160所含之樹脂(例如密封樹脂61)硬化。較佳為使發光元件50被密封劑160被覆之基體10保持為特定
之時間、特定之溫度。藉此,形成密封構件60。
於本實施形態中,紅色螢光體63及綠色螢光體65不堵塞於噴嘴85之前端及噴嘴85之內部而供給至發光元件50上。因此,於密封構件60中,紅色螢光體63及綠色螢光體65均勻地分散。
若以密封劑160配置於相較於框體部15之上表面更為上側之狀態使該密封劑160所含之樹脂硬化,則密封構件60之上表面70隨著自密封構件60之俯視周緣朝向密封構件60之俯視中央而位於發光元件50側。
<單片化>
於相鄰之發光元件50之間切斷基體10。於使用引線框架作為基體10之情形時,於相鄰之發光元件50之間切斷引線框架。以如此方式可獲得圖1所示之發光裝置。
如以上所說明般,圖1所示之發光裝置具備基體10、配置於基體10之發光元件50、及使發光元件50密封之密封構件60。密封構件60至少包含粒子狀之紅色螢光體63。紅色螢光體63至少包含Mn4+賦活氟化物錯合物螢光體。密封構件60之上表面70至少於一部分具有凹凸部71。藉此,可獲得具有於顯示器用途較佳之發光特性之發光裝置。
密封構件60之上表面70較佳為隨著自密封構件60之俯視周緣朝向密封構件60之俯視中央,位於發光元件50側。藉此,可使密封構件60之上表面70具有透鏡效果。又,紅色螢光體63較佳為於密封構件60中均勻地分散。
密封構件60較佳為進而含有綠色螢光體65。藉此,可提供發出白色光之發光裝置。
紅色螢光體63較佳為相對於綠色螢光體65,以質量比計,含有2倍以上且4倍以下。藉此,凹凸部71變得易於形成於密封構件60之上表面70。
密封構件60較佳為進而含有密封樹脂61。關於密封樹脂,其黏度較佳為2000(mPa‧s)以上且7000(mPa‧s)以下。藉此,可量產發光裝置。
圖1所示之發光裝置之製造方法包括:將發光元件50固定於基體10之步驟、及將固定於基體10之發光元件50以密封劑160密封之密封步驟。密封步驟包括使密封劑160自噴嘴85噴出至發光元件50之步驟。密封劑160至少包含密封樹脂61及紅色螢光體63。關於密封樹脂61,其黏度為2000(mPa‧s)以上且7000(mPa‧s)以下。紅色螢光體63至少包含Mn4+賦活氟化物錯合物螢光體。藉此,可提供具有於顯示器用途較佳之發光特性之發光裝置。
密封樹脂61較佳為含有苯基聚矽氧樹脂。關於苯基聚矽氧樹脂,其黏度較佳為10000(mPa‧s)以上。藉此,密封樹脂61之黏度成為2000(mPa‧s)以上且7000(mPa‧s)以下。
以下,列舉實施例更加詳細地說明本發明,但本發明並不限定於該等。
<實施例1、2及比較例1、2>
變更密封劑之主劑或螢光體之粒徑,製備密封劑,使用相同噴出裝置研究螢光體之堵塞情況。將其結果示於表1。
如表1所示,於比較例1、2中,於噴嘴之前端及噴嘴之內部之至少一者中發生螢光體之孔堵塞。作為其原因,可認為比較例1、2之密封劑所含之密封樹脂之黏度未達300(mPa‧s)。
另一方面,於實施例1中,於噴嘴之前端及噴嘴之內部未發生螢光體之孔堵塞。於螢光體之粒徑較大之實施例2中,於噴嘴之前端及噴嘴之內部亦未發生螢光體之孔堵塞。作為其原因,可認為實施例1及2之密封劑所含之密封樹脂之黏度為2000(mPa‧s)以上且7000(mPa‧s)以下。
<實施例3>
首先,準備基體。基體具有台部、及包含耐熱性聚合物之框體部。於台部設有配線圖案,配線圖案為銅合金經銀鍍覆而構成。框體部配置於台部之上表面周緣。於框體部形成有凹部,凹部之側面隨著遠離台部之上表面而向外側傾斜。凹部之深度為0.27mm。凹部之開口形成為俯視矩形(短邊0.5mm(短邊之中最長部分之長度)×長邊3.2mm),俯視下之上述開口之角部經倒角。
其次,準備發出於450nm具有峰值波長之光之發光元件。使用苯基聚矽氧系接著劑將該發光元件配置於內引線部。其後,藉由以150℃保持1小時使苯基聚矽氧系接著劑硬化。藉此,使發光元件固定於內引線部。
繼而,使用金線將內引線部與發光元件電性連接。其後,製備密封劑。
於所製備之密封劑中,含有黏度為13000mPa‧s之苯基聚矽氧樹脂(A劑(主劑))、黏度為3600mPa‧s之苯基聚矽氧樹脂(B劑(硬化劑))、K2SiF6:Mn(體積基準之中值粒徑(d50)為34.0μm,紅色螢光體)、及以Eu0.05Si11.50Al0.50O0.05N15.95(β型SiAlON)(體積基準之中值粒徑(d50)為12.0μm)之組成所表示之綠色螢光體。上述紅色螢光體相對
於苯基聚矽氧樹脂含有76質量%,上述綠色螢光體相對於苯基聚矽氧樹脂含有24質量%。
繼而,使用噴出裝置使密封劑噴出至發光元件。關於所使用之噴出裝置之噴嘴,外形為0.4mm,內徑為0.28mm。其後,以100℃保持1小時後,以150℃保持1小時。藉此,上述苯基聚矽氧樹脂(A劑(主劑))藉由上述苯基聚矽氧樹脂(B劑(硬化劑))而硬化。其後,將基體分割。藉此,獲得側面發光型之發光裝置(縱0.6mm×橫3.8mm×高1.0mm)。
<比較例3>
使用CaAlSiN3:Eu(體積基準之中值粒徑(d50)為12μm)作為紅色螢光體,將紅色螢光體之含量設為綠色螢光體之含量之1/10倍,除此以外,按照實施例3所記載之方法獲得發光裝置。
<評價>
使用掃描式電子顯微鏡觀察實施例3之發光裝置之上表面。將其結果示於圖6(a)。亦同樣地觀察比較例3之發光裝置之上表面。將其結果示於圖6(b)。相對於實施例3中於密封構件之上表面形成有凹凸部,比較例3中於密封構件之上表面未形成凹凸部。為了使實施例3之色度及發光強度分別與比較例3之色度及發光強度大致相同,將實施例3之Mn4+賦活氟化物錯合物螢光體之含量設為比較例3之先前之CaAlSiN3:Eu之含量之約10倍。因此,認為可獲得此種結果。
圖7為表示實施例3所獲得之發光裝置之發射光譜之圖表。於圖7中,縱軸表示發光強度(任意單位),橫軸表示波長(nm)。如圖7所示,自實施例3所獲得之發光裝置釋放出藍色之光(峰值波長為445nm附近)、綠色之光(峰值波長為540nm附近)及紅色之光(於630nm附近顯示最大強度)。因此,可認為實施例3中,可獲得可以高效率產生顏色再現性優異之光之發光裝置。
應認為本次揭示之實施形態及實施例於所有方面為例示,並非限制性者。本發明之範圍並不藉由上述說明而藉由申請專利範圍表示,意欲包含與申請專利範圍同等之含義及範圍內之所有變更。
10‧‧‧基體
11‧‧‧台部
12‧‧‧內引線部
13‧‧‧配線圖案
14‧‧‧外引線部
15‧‧‧框體部
17‧‧‧凹部
19‧‧‧指示部
50‧‧‧發光元件
51‧‧‧接著劑
53‧‧‧導電性線
60‧‧‧密封構件
61‧‧‧密封樹脂
63‧‧‧紅色螢光體
65‧‧‧綠色螢光體
70‧‧‧上表面
Claims (7)
- 一種發光裝置之製造方法,其包括:將發光元件固定於基體之步驟、及將固定於上述基體之發光元件以密封劑密封之密封步驟;於上述基體之上表面形成有凹部,上述密封步驟包括使上述密封劑自噴嘴噴出至上述發光元件之步驟,上述密封劑至少包含密封樹脂、紅色螢光體及綠色螢光體,上述密封樹脂之黏度為2000(mPa‧s)以上且7000(mPa‧s)以下,且上述紅色螢光體至少包含Mn4+賦活氟化物錯合物螢光體,構成上述凹部之開口之長邊之長度為1mm以上且5mm以下,且構成上述凹部之開口之短邊之長度為0.05mm以上且0.8mm以下。
- 如請求項1之發光裝置之製造方法,其中上述密封樹脂含有苯基聚矽氧樹脂。
- 如請求項2之發光裝置之製造方法,其中上述苯基聚矽氧樹脂之黏度為10000(mPa‧s)以上。
- 一種搭載發光裝置之基板,其具備發光裝置及基板,上述發光裝置具備基體、配置於上述基體之發光元件、及將上述發光元件密封之密封構件,上述密封構件至少包含粒子狀之紅色螢光體及綠色螢光體,上述紅色螢光體至少包含Mn4+賦活氟化物錯合物螢光體,上述基板具備有電路,相對於上述發光裝置之光出射面為垂直之上述發光裝置之面係 安裝於上述基板。
- 如請求項4之搭載發光裝置之基板,其中上述密封構件之上表面隨著自該密封構件之俯視周緣朝向該密封構件之俯視中央,位於上述發光元件側,上述紅色螢光體均勻地分散於上述密封構件中。
- 如請求項4或5之搭載發光裝置之基板,其中上述密封構件進而含有密封樹脂,上述密封樹脂之黏度為2000(mPa‧s)以上且7000(mPa‧s)以下。
- 如請求項4之搭載發光裝置之基板,其中上述Mn4+賦活氟化物錯合物螢光體之體積基準之中值粒徑為10μm以上且90μm以下。
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Also Published As
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US9806236B2 (en) | 2017-10-31 |
JPWO2015056590A1 (ja) | 2017-03-09 |
TWI624086B (zh) | 2018-05-11 |
TW201642500A (zh) | 2016-12-01 |
CN105659397B (zh) | 2018-04-20 |
TW201519480A (zh) | 2015-05-16 |
CN105659397A (zh) | 2016-06-08 |
US20160233387A1 (en) | 2016-08-11 |
WO2015056590A1 (ja) | 2015-04-23 |
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