TWI580003B - To殼體及其製造方法 - Google Patents

To殼體及其製造方法 Download PDF

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Publication number
TWI580003B
TWI580003B TW103100633A TW103100633A TWI580003B TW I580003 B TWI580003 B TW I580003B TW 103100633 A TW103100633 A TW 103100633A TW 103100633 A TW103100633 A TW 103100633A TW I580003 B TWI580003 B TW I580003B
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TW
Taiwan
Prior art keywords
feedthrough
base
connecting line
receiving
housing
Prior art date
Application number
TW103100633A
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English (en)
Chinese (zh)
Other versions
TW201438184A (zh
Inventor
羅伯特 海特勒
肯尼士 陳
喬格 密特瑪亞
凱斯登 德洛吉穆勒
Original Assignee
史歐特公司
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51064363&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI580003(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 史歐特公司 filed Critical 史歐特公司
Publication of TW201438184A publication Critical patent/TW201438184A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H10W76/18—Insulating materials, e.g. resins, glasses or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/132—Containers comprising a conductive base serving as an interconnection having other interconnections through an insulated passage in the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias
    • H10W44/212—Coaxial feed-throughs in substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Amplifiers (AREA)
TW103100633A 2013-01-18 2014-01-08 To殼體及其製造方法 TWI580003B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013100510 2013-01-18

Publications (2)

Publication Number Publication Date
TW201438184A TW201438184A (zh) 2014-10-01
TWI580003B true TWI580003B (zh) 2017-04-21

Family

ID=51064363

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103100633A TWI580003B (zh) 2013-01-18 2014-01-08 To殼體及其製造方法

Country Status (6)

Country Link
US (1) US9159634B2 (cg-RX-API-DMAC10.html)
JP (2) JP5881752B2 (cg-RX-API-DMAC10.html)
KR (1) KR101640298B1 (cg-RX-API-DMAC10.html)
CN (1) CN103943574B (cg-RX-API-DMAC10.html)
DE (1) DE102013114547B4 (cg-RX-API-DMAC10.html)
TW (1) TWI580003B (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6715601B2 (ja) * 2016-01-08 2020-07-01 新光電気工業株式会社 光半導体素子用パッケージ
US10257932B2 (en) * 2016-02-16 2019-04-09 Microsoft Technology Licensing, Llc. Laser diode chip on printed circuit board
JP6929113B2 (ja) 2017-04-24 2021-09-01 日本ルメンタム株式会社 光アセンブリ、光モジュール、及び光伝送装置
DE102017123342A1 (de) 2017-10-09 2019-04-11 Schott Ag TO-Gehäuse mit hoher Reflexionsdämpfung
US10319654B1 (en) * 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
KR102629637B1 (ko) * 2018-04-19 2024-01-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 레이저 구동 장치 및 그 제조 방법
JP7245620B2 (ja) * 2018-08-03 2023-03-24 日本ルメンタム株式会社 光サブアッセンブリ及び光モジュール
JP7249745B2 (ja) * 2018-08-03 2023-03-31 日本ルメンタム株式会社 光サブアッセンブリ及び光モジュール
DE102018120893B4 (de) * 2018-08-27 2022-01-27 Schott Ag TO-Gehäuse mit einer Durchführung aus Glas
DE102018120895A1 (de) * 2018-08-27 2020-02-27 Schott Ag TO-Gehäuse mit einem Erdanschluss
JP7240160B2 (ja) * 2018-12-11 2023-03-15 新光電気工業株式会社 ステム
CN112585743B (zh) * 2018-12-26 2023-10-13 京瓷株式会社 布线基体、电子部件收纳用封装以及电子装置
JP7398877B2 (ja) * 2019-04-18 2023-12-15 新光電気工業株式会社 半導体装置用ステム及び半導体装置
US11973312B2 (en) * 2019-07-02 2024-04-30 Mitsubishi Electric Corporation Semiconductor laser device
DE102021104885A1 (de) 2020-03-04 2021-09-09 Schott Ag Sockel und Gehäuse mit integriertem Kühler für elektronische Bauelemente
KR102495148B1 (ko) * 2020-11-30 2023-02-07 주식회사 오이솔루션 To-can 타입 반도체 패키지를 위한 임피던스 신호선의 구조

Citations (4)

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US20050194601A1 (en) * 2001-04-17 2005-09-08 Ryoma Suenaga Light emitting device
US20060192221A1 (en) * 2002-08-16 2006-08-31 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
JP2007227724A (ja) * 2006-02-24 2007-09-06 Mitsubishi Electric Corp 半導体発光装置
JP2008130834A (ja) * 2006-11-21 2008-06-05 Mitsubishi Electric Corp 光モジュール

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DE10221706B4 (de) 2002-05-16 2006-04-20 Schott Ag TO-Gehäuse für Hochfrequenzanwendungen
JP3990674B2 (ja) * 2004-02-10 2007-10-17 日本オプネクスト株式会社 光送信機
KR101171186B1 (ko) * 2005-11-10 2012-08-06 삼성전자주식회사 고휘도 발광 다이오드 및 이를 이용한 액정 표시 장치
JP4923542B2 (ja) * 2005-11-30 2012-04-25 三菱電機株式会社 光素子用ステムとこれを用いた光半導体装置
JP4970837B2 (ja) * 2006-04-25 2012-07-11 日本オプネクスト株式会社 受光素子モジュール
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JP5380724B2 (ja) 2008-03-27 2014-01-08 新光電気工業株式会社 光半導体素子用パッケージ及びその製造方法
JP5409432B2 (ja) * 2010-02-23 2014-02-05 京セラ株式会社 電子部品搭載用パッケージおよびそれを用いた電子装置
JP5616178B2 (ja) 2010-09-16 2014-10-29 京セラ株式会社 電子部品搭載用パッケージおよび通信用モジュール
JP5703522B2 (ja) * 2010-09-30 2015-04-22 セイコーインスツル株式会社 パッケージ、パッケージ製造方法、圧電振動子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050194601A1 (en) * 2001-04-17 2005-09-08 Ryoma Suenaga Light emitting device
US20060192221A1 (en) * 2002-08-16 2006-08-31 Jds Uniphase Corporation Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
JP2007227724A (ja) * 2006-02-24 2007-09-06 Mitsubishi Electric Corp 半導体発光装置
JP2008130834A (ja) * 2006-11-21 2008-06-05 Mitsubishi Electric Corp 光モジュール

Also Published As

Publication number Publication date
US20140217570A1 (en) 2014-08-07
DE102013114547B4 (de) 2020-01-16
US9159634B2 (en) 2015-10-13
KR101640298B1 (ko) 2016-07-15
DE102013114547A1 (de) 2014-07-24
JP2014138190A (ja) 2014-07-28
KR20140093623A (ko) 2014-07-28
CN103943574A (zh) 2014-07-23
JP2016103657A (ja) 2016-06-02
JP5881752B2 (ja) 2016-03-09
CN103943574B (zh) 2017-11-17
TW201438184A (zh) 2014-10-01

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