TWI576972B - 半導體晶片封裝體及其製造方法 - Google Patents

半導體晶片封裝體及其製造方法 Download PDF

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Publication number
TWI576972B
TWI576972B TW103100272A TW103100272A TWI576972B TW I576972 B TWI576972 B TW I576972B TW 103100272 A TW103100272 A TW 103100272A TW 103100272 A TW103100272 A TW 103100272A TW I576972 B TWI576972 B TW I576972B
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hole
semiconductor
chip package
semiconductor wafer
holes
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TW103100272A
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TW201431023A (zh
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孫唯倫
張恕銘
黃玉龍
何彥仕
劉滄宇
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精材科技股份有限公司
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Publication of TW201431023A publication Critical patent/TW201431023A/zh
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    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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Description

半導體晶片封裝體及其製造方法
本發明是有關於一種封裝體及其製造方法，特別是有關於一種半導體晶片封裝體及其製造方法。
近年來，積體電路元件均已廣泛地應用於例如是數位相機(digital camera)、數位攝錄像機(digital video recorder))和手機(mobile phone)等的消費電子元件和攜帶型電子元件中。隨著上述各種電子元件及攜帶式電子元件愈來愈普及與輕巧化，使得應用於其中的半導體晶片封裝體的尺寸也愈來愈縮小，也因為各種類型的積體電路製程的微小化以及多功能性整合晶片之趨勢發展，使半導體晶片封裝體內部各元件彼此連結的密度愈來愈高，走線之間越來越緊密，彼此的耦合現象也越趨嚴重，使得訊號在傳輸時經常會有電磁干擾的問題，是故接地貫孔(ground via)的設置係當前半導體晶片封裝為解決上述問題，所經常採用的手段之一，然而目前接地貫孔(ground via)的製作多以另開光罩，以其獨立之微影蝕刻製程方式製作，使整體半導體晶片封裝體之製作成本提高。
本發明之一態樣係提供半導體晶片封裝體，具有較小的半導體晶片封裝體尺寸且接地貫孔之製作不須以獨立之微影蝕刻製程製作，具有更低的製造成本。
本發明一實施例提供一種半導體晶片封裝體，包含半導體晶片、複數個孔洞、絕緣層、導電層、以及封裝層。半導體晶片具有上表面及下表面，且具有至少一感應元件設置於上表面、以及至少一連接墊結構電性連接於感應元件。連接墊結構自半導體晶片之上表面朝下表面延伸。孔洞自半導體晶片之下表面朝上表面延伸，包含至少一個第一孔洞以及至少一個第二孔洞。第一孔洞接觸連接墊結構且露出連接墊結構之一部分。第二孔洞不接觸該連接墊結構。絕緣層自半導體晶片之下表面朝上表面延伸，部分的絕緣層位於孔洞之中。其中，絕緣層係覆蓋各第一孔洞之全部孔壁但僅覆蓋各第二孔洞之一部分孔壁。導電層位於絕緣層下且自半導體晶片之下表面朝上表面延伸，部分的導電層位於孔洞之中。其中，位於第一孔洞內的導電層係透過連接墊結構電性連接感應元件。封裝層形成於導電層之下。
在本發明之一實施方式中，第一孔洞以及第二孔洞自半導體晶片之下表面朝上表面延伸之深度約略相同。
在本發明之一實施方式中，第二孔洞具有孔徑不大於15微米。
在本發明之一實施方式中，感應元件係感光元件。
在本發明之一實施方式中，感光元件之受光表面至封裝層之底表面的最短距離不大於100微米。
在本發明之一實施方式中，進一步包含至少一焊球 設置於半導體晶片封裝體之下表面之下，且電性連接導電層。
在本發明之一實施方式中，焊球具有球徑不大於50微米。
本發明之另一態樣係提供半導體晶片封裝體的製造方法，包含：提供基底，基底定義有複數個半導體晶片區，半導體晶片區分別形成至少一半導體晶片，半導體晶片具有上表面及下表面，每一半導體晶片形成有感應元件設置於上表面以及連接墊結構電性連接感應元件，且基底上具有第一黏著層設置於各半導體晶片之上表面以及感應元件之上、以及承載基板設置於第一黏著層之上。形成複數個孔洞於半導體晶片中，自半導體晶片之下表面朝上表面延伸，複數個孔洞包含至少一個第一孔洞以及至少一個第二孔洞。第一孔洞接觸連接墊結構且露出連接墊結構之一部分。第二孔洞不接觸連接墊結構。形成絕緣層於各半導體晶片之下表面下，絕緣層自各半導體晶片之下表面朝上表面延伸，部分的絕緣層位於孔洞之中。其中絕緣層係完整覆蓋第一孔洞之孔壁且絕緣層僅部分覆蓋第二孔洞之孔壁。以及形成導電層於絕緣層下且自各半導體晶片之下表面朝上表面延伸，部分的導電層位於孔洞之中。其中位於第一孔洞內的導電層係透過連接墊結構電性連接感應元件。
在本發明之一實施方式中，於形成導電層之步驟後，進一步包含沿各半導體晶片區之間的複數條交界線由各半導體晶片之下表面朝上表面預切割，使各半導體晶片之間具有複數條切割道。形成封裝層於各半導體晶片之導電層之下。形成至少一焊球於各半導體晶片之封裝層之下且電性連 接導電層。以及沿各切割道切割，移除沿各該切割道之部分的第一黏著層使各半導體晶片分離但各半導體晶片仍藉由位於各半導體晶片上之第一黏著層附著於承載基板之下。
在本發明之一實施方式中，於沿各切割道切割之步驟後，進一步包含貼附薄膜框載體連接各半導體晶片之各焊球，並移除位於各半導體晶片上之承載基板，以形成半導體晶片封裝體。
在本發明之一實施方式中，第一孔洞以及第二孔洞係以相同製程步驟中同時形成。
在本發明之一實施方式中，第一孔洞以及第二孔洞自半導體晶片之下表面朝上表面延伸之深度約略相同。
在本發明之一實施方式中，在移除位於各半導體晶片上之承載基板之步驟後，更包含貼附第二黏著層於各半導體晶片上之第一黏著層之上，再移除薄膜框載體。
在本發明之一實施方式中，第二孔洞具有一孔徑不大於15微米。
在本發明之一實施方式中，形成封裝層之步驟係以微影蝕刻的方式，使封裝層形成對應於導電層之圖案。
在本發明之一實施方式中，感應元件係感光元件。
在本發明之一實施方式中，感光元件之受光表面至封裝層之底表面的最短距離不大於100微米。
100‧‧‧半導體晶片封裝體
102‧‧‧半導體晶片
102a‧‧‧感應元件
102b‧‧‧連接墊結構
104‧‧‧孔洞
104a‧‧‧第一孔洞
104b‧‧‧第二孔洞
106‧‧‧絕緣層
108‧‧‧導電層
110‧‧‧封裝層
112‧‧‧焊球
114‧‧‧第一黏著層
116‧‧‧承載基板
118‧‧‧切割道
120‧‧‧薄膜框載體
122‧‧‧第二黏著層
本發明之上述和其他態樣、特徵及其他優點參照說明書內容並配合附加圖式得到更清楚的了解，其中：第1圖繪示本發明一實施方式之半導體晶片封裝體的上視 圖。
第2圖繪示本發明一實施方式之半導體晶片封裝體的剖面圖。
第3至8圖繪示本發明一實施方式之影像感測元件封裝體之製造方法的製程階段剖面示意圖。
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施方式及實施例，在有益的情形下可相互組合或取代，也可在一實施方式或一實施例中附加其他的實施方式或實施例，而無須進一步的記載或說明。
在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施方式及/或實施例。然而，可在無此等特定細節之情況下實踐本發明之實施方式及/或實施例。在其他情況下，為簡化圖式，熟知的結構與裝置僅示意性地繪示於圖中。
第1圖繪示本發明一實施例之半導體晶片封裝體100的上視圖，而第2圖繪示本發明該實施方式之半導體晶片封裝體100沿第1圖之AA’剖線的剖面圖。請同時參照第1圖以及第2圖，半導體晶片封裝體100包含半導體晶片102、複數個孔洞104、絕緣層106、導電層108以及封裝層110。
請繼續參照第2圖，半導體晶片102具有至少一感應元件102a以及至少一連接墊結構102b。在本實施例中，感應元件102a係位於半導體晶片102的上表面，其中，感 應元件102a例如可以是互補式金屬氧化物半導體元件(complementary metal-oxide semiconductor device)或電荷耦合元件(charge-coupled device)等光電感測元件，但不以此為限。此外，半導體晶片102還包含有至少一連接墊結構102b，其電性連接感應元件102a且連接墊結構102b係自該半導體晶片102的上表面朝半導體晶片102的下表面延伸。如第2圖所示，連接墊結構102b可有一部份和感應元件102a同樣位於半導體晶片102之上表面，使該部分的連接墊結構102b與感應元件102a之間具有電性連接，另一部份的連接墊結構102b可以是內連線結構(interconnection structure)，由半導體晶片102的上表面朝半導體晶片102的下表面延伸連接至位於半導體晶片102之內部之另一部份的連接墊結構102b，使位於半導體晶片102之上表面的感應元件102a和半導體晶片102內部藉由連接墊結構102b而具有電性導通，但不以此方式為限。
請繼續參照第2圖，半導體晶片封裝體100包含自上述之半導體晶片102的下表面朝半導體晶片102的上表面延伸之複數個孔洞104，其中複數個孔洞104包含兩種孔洞，即至少一個第一孔洞104a以及至少一個第二孔洞104b，值得注意的是，第一孔洞104a以及第二孔洞104b各自之孔徑、於半導體晶片封裝體100中之位置、以及其發揮之作用均不相同。明確來說，第一孔洞104a係自上述之半導體晶片102的下表面朝半導體晶片102的上表面延伸至接觸位於半導體晶片102內部之連接墊結構102b，並且使半導體晶片102內部之連接墊結構102b具有一部分之露出，換言之，第一孔洞104a係直通矽晶穿孔(Through-Silicon Via,TSV)待後續導電層108填入、半導體晶片封裝體100封裝完成後，作為半導體晶片102之下表面至半導體晶片102之上表面的感應元件102a之垂直電性導通路徑，在本發明之一實施例中，第一孔洞104a之孔徑約為60微米。第二孔洞104b亦自上述之半導體晶片102的下表面朝半導體晶片102的上表面延伸，然第二孔洞104b不接觸位於半導體晶片102內部之連接墊結構102b，換言之，第二孔洞104b實質上係接地貫孔(ground via)，近來因積體電路製程微小化，使得走線之間越來越緊密，彼此的耦合現象也越趨嚴重，使得訊號在傳輸時容易產生電磁干擾等影響信號完整性的問題，接地貫孔的設置係當前半導體晶片封裝為解決上述問題所經常採用的手段之一，在本發明之一實施例中，第二孔洞104b之孔徑約為15微米，而第一孔洞104a以及第二孔洞104b自半導體晶片102之下表面朝上表面延伸之深度約略相同。請繼續參照第2圖，於半導體晶片102的下表面覆蓋有一絕緣層106，所使用的材料可以是氧化矽(silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)或其它合適之絕緣材料，絕緣層106除覆蓋半導體晶片102的下表面，尚自半導體晶片102的下表面之複數個孔洞104(包含第一孔洞104a以及第二孔洞104b)的開口，朝半導體晶片102的上表面延伸，使部分絕緣層106係位於個第一孔洞104a以及各第二孔洞104b與半導體晶片102接觸的孔壁上，值得注意的是，絕緣層106係完整覆蓋於各第一孔洞104a與半導體晶片102接觸的孔壁上；而絕緣層106僅覆蓋於各第二孔洞104b與半導體晶片102接觸的部分孔壁上。在絕緣層106下方具有一導電層108，所使用的材料例 如是鋁(aluminum)、銅(copper)或鎳(nickel)或其他合適的導電材料，導電層108具有特殊的圖案(pattern)，即在上述導電材料沉積後，會再以微影蝕刻的方式案圖化，於絕緣層106下方僅留下對應於第一、第二孔洞以及半導體晶片102下表面的金屬走線設計等位置上之導電層108，導電層108位於絕緣層106下方且亦自該半導體晶片102之下表面朝上表面延伸，使部分的導電層108位於各第一孔洞104a以及各第二孔洞104b中，並將各第一孔洞104a以及各第二孔洞104b中填滿。值得注意的是，位於各第一孔洞104a中的導電層108因接觸原來位於半導體晶片102內部的連接墊結構102b之露出部分，故可藉由連接墊結構102b電性導通感應元件102a，但又因絕緣層106係完整覆蓋於各第一孔洞104a與半導體晶片102接觸的孔壁上，故位於各第一孔洞104a中的導電層108與半導體晶片102內部之間係被絕緣層106完全隔離而無接觸；而位於各第二孔洞104b的導電層108則因為絕緣層106僅覆蓋於各第二孔洞104b與半導體晶片102接觸的一部分孔壁上，故位於各第二孔洞104b的導電層108即可透過接觸絕緣層106未覆蓋於各第二孔洞104b與半導體晶片102接觸的另一部分孔壁上，而與半導體晶片102內部接觸形成接地(grounded)，即前述之接地貫孔(ground via)。如第2圖所示，封裝層110係形成於導電層108下方，其中，封裝層110所使用的材料可以是於半導體晶片封裝技術中所常用的綠漆(solder mask)，封裝層110具有開口以露出部分導電層108，使露出之部分導電層108和後續形成之焊球112接觸而具有電性導通，封裝層110可以避免焊球112彼此接觸而短路，同時亦具有保護導電層108 的功能。在本發明之一實施例中，感應元件102a係感光元件，其中感光元件之受光表面至封裝層110之底表面的最短距離不大於100微米。在本發明之一實施例中，封裝材料在塗布或沉積形成後，進一步以微影蝕刻的方式將其案圖化，使封裝層110僅留下對應於第一孔洞周邊以及半導體晶片102下表面的金屬走線等位置上之封裝層110，具體言之，封裝層110僅需留下必要的部分而非全面覆蓋，如此一來可減少半導體晶片102在後續製程中，因封裝層110熱變形所可能帶來的晶片彎曲(die warpage)現象。最後，至少一焊球112設置於封裝層110的下方，並透過前述封裝層110之開口接觸露出部分之導體層108，使露出之部分導體層108和焊球112接觸而具有電性導通，焊球112所使用的材料例如可以是錫(Sn)、或其他適合焊接之導電材料。
第3圖至第8圖係製作如第2圖所示之半導體晶片封裝體100的製作方法示意圖。
請先參照第3圖所繪製之局部圖，第3圖係示意本發明之一實施例的製作方法之第一步驟，本步驟係提供一具有複數個半導體晶片102之基底，在基底上貼附一第一黏著層114，在第一黏著層114上貼附一承載基板116，並由各半導體晶片102的下表面朝上表面形成複數個孔洞104。詳細說明如下：提供一基底，基底例如可以是矽晶圓或其他半導體材料，並於基底上定義複數個半導體晶片區，在各半導體晶片區分別形成至少一半導體晶片102，為方便說明，第3圖所繪製係基底之局部，即基底係具有複數個半導體晶片102，各半導體晶片102分別具有一上表面及一下表面，且各半導體晶片102包含感應元件102a以及連接墊結構 102b，其中，感應元件102a係位於各半導體晶片102之上表面，連接墊結構102b係電性連接感應元件102a，且自半導體晶片102之上表面朝下表面延伸。接著，於具有複數個半導體晶片102的基底上，形成第一黏著層114，即使得基底上各半導體晶片102之上表面以及位於各半導體晶片102之上表面的各感應元件102a均貼附於第一黏著層114之下方。設置承載基板116於第一黏著層114之上，其中，第一黏著層114之作用係使各半導體晶片102黏著於承載基板116下方，以及保護各半導體晶片102及位於其上表面的各感應元件102a，所使用的材料可以是UV膠帶，但不限於此。而承載基板116係使各半導體晶片102在後續分割製程中，穩定附著於承載基板116下方而不致移位造成錯誤切割，並且提供切割製程中必要的承載力。接著，在同一道製程中在各半導體晶片102之下表面朝上表面形成複數個孔洞104，其中，複數個孔洞104包含至少一個第一孔洞104a以及至少一個第二孔洞104b，形成各第一孔洞104a以及各第二孔洞104b的方式例如可以是微影蝕刻，但不以此為限。值得注意的是，於上述製程中同時形成的各第一孔洞104a以及各第二孔洞104b除兩者自該半導體晶片102之下表面朝上表面延伸的深度約略相同之外，第一孔洞104a以及第二孔洞104b於孔徑、於半導體晶片封裝體100中之位置、以及其發揮之作用均不相同。在本發明之一實施例中，第一孔洞104a之孔徑約為60微米，而第二孔洞104b之孔徑約為15微米，第二孔洞104b之孔徑較第一孔洞104a之孔徑為小，同時製作各第一孔洞104以及各第二孔洞104b的方式可以微影蝕刻製程，或是其他可以控制並同時形成不 同孔徑大小之製程技藝。明確來說，第一孔洞104a係自上述之半導體晶片102的下表面朝半導體晶片102的上表面延伸至接觸位於半導體晶片102內部之連接墊結構102b，並且使半導體晶片102內部之連接墊結構102b具有一部分之露出，然第二孔洞104b不接觸位於半導體晶片102內部之連接墊結構102b，換言之，第二孔洞104b實質上係接地貫孔(ground via)。
請繼續參照第4圖，第4圖係示意本發明之一實施例的製作方法之第二步驟，本步驟係形成絕緣層106以及導電層108，其中絕緣層106係形成於各半導體晶片102之下表面且自各該半導體晶片102之該下表面朝該上表面延伸，使部分的該絕緣層106形成於各第一孔洞104a於半導體晶片102內部之孔壁上；以及各第二孔洞104b於半導體晶片102內部之孔壁上，形成絕緣層106的方式例如可以是以化學沉積法，沈積例如是氧化矽(silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)或其它合適之絕緣材料。其中值得注意的是，形成之絕緣層106必須完整覆蓋於各第一孔洞104a與半導體晶片102接觸的孔壁上；而絕緣層106則必須僅覆蓋於各第二孔洞104b與半導體晶片102接觸的一部分孔壁上而不可完整覆蓋，這是在薄膜沉積製程上有其填洞能力(gap-fill capability)能力的限制，針對不同孔洞的孔洞深度(trench depth)以及孔徑(opening)大小，以及兩者之比例，即孔洞深寬比(aspect ratio)，一般而言，使薄膜沉積於孔徑越小或深寬比越大的孔洞，需使用越高填洞能力之薄膜製程方能成功，此外，各種材料之沉積以及沉積製程參數都可影響薄膜沉積製程的填洞能力。據此， 由於第二孔洞104b之孔徑較第一孔洞104a之孔徑為小，故選擇性地使絕緣層106於第一孔洞104a之孔壁完整覆蓋，而於第二孔洞104b之孔壁無法完整覆蓋係可以達成的合理目標，於本實施例絕緣層106沉積係以適當之絕緣材料搭配沉積製程參數的調整，執行上述之第一孔洞104a與第二孔洞104b之間的填洞選擇。接著，在絕緣層106下方形成一導電層108，可利用例如是濺鍍(sputtering)、蒸鍍(evaporating)、電鍍(electroplating)或無電鍍(electroless plating)的方式製作，使用的材料例如是鋁(aluminum)、銅(copper)或鎳(nickel)或其他合適的導電材料，導電材料沉積後，再以微影蝕刻的方式圖案化上述導電材料，使導電層108於絕緣層106下方僅留下對應於第一、第二孔洞以及半導體晶片102下表面的金屬走線設計等位置上，藉由上述圖案化導電材料層的步驟，可重新佈局(redistributed process)後續形成之影像感測元件封裝體的訊號傳導路線。導電層108位於絕緣層106下方且亦自該半導體晶片102之下表面朝上表面延伸，使部分的導電層108位於各第一孔洞104a以及各第二孔洞104b中，值得注意的是，導電層108係將各第一孔洞104a以及各第二孔洞104b填滿，例如是利用填洞能力(gap-fill capability)較佳的金屬薄膜製程使不同孔徑的各第一孔洞104a以及各第二孔洞104b無選擇性地全部填滿。使得位於各第一孔洞104a中的導電層108與半導體晶片102內部之間係被絕緣層106完全隔離而無接觸；而位於各第二孔洞104b的導電層110即可透過接觸絕緣層106未覆蓋於各第二孔洞104b與半導體晶片102接觸的另一部分孔壁上，而與半導體晶片102內部接觸形成接地(grounded)。
請接著參照第5圖，第5圖係示意本發明之一實施例的製作方法之第三步驟，本步驟係將基底上各半導體晶片102之間預切割以形成各半導體晶片102之間的切割道118，其中，預切割係由各半導體晶片102間的下表面朝上表面執行，預切割可採用例如是乾式蝕刻(dry-etching)的方式，但不以此為限。接著形成一封裝層110於各半導體晶片102之導電層108之下，其中，封裝層110所使用的材料可以是綠漆(solder mask)。在本發明之一實施例中，感應元件102a係感光元件，其中感光元件之受光表面至封裝層110之底表面的最短距離不大於100微米。在本發明之一實施例中，封裝材料在塗布或沉積形成後，進一步以微影蝕刻的方式將其案圖化，使封裝層110僅留下對應於第一孔洞周邊以及半導體晶片102下表面的金屬走線等位置上之封裝層110，具體言之，封裝層110僅需留下必要的部分而非全面覆蓋，如此一來可減少半導體晶片102後續因封裝層110熱變形所可能帶來的晶片彎曲(die warpage)現象。
請接著參照第6圖，第6圖係示意本發明之一實施例的製作方法之第四步驟，本步驟係形成至少一焊球112於各半導體晶片102之封裝層110之下且電性連接導電層108，接著沿各半導體晶片102之間的各切割道118切割，移除沿各切割道118上部分的第一黏著層114，使各半導體晶片102分離，但各半導體晶片102仍藉由位於各半導體晶片102上之第一黏著層114附著於該承載基板116之下。
請接著參照第7圖，第7圖係示意本發明之一實施例的製作方法之第五步驟，本步驟係貼附一薄膜框載體120連接各半導體晶片102下方之各焊球112，並移除位於各半 導體晶片102上之承載基板116。此外，若為了將各半導體晶片102做適當之捲筒以便利運送，可再參照第8圖所示，於上述移除位於各半導體晶片102上之承載基板118之後，進一步貼附一第二黏著層122於各半導體晶片102上之第一黏著層114之上，再移除連接各半導體晶片102下方之各焊球112的薄膜框載體120，如此便可配合不同捲筒機台所預設之方向，倒轉各半導體晶片102適當的捲筒方向，使捲筒運送的方式更有彈性。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧半導體晶片封裝體
102‧‧‧半導體晶片
102a‧‧‧感應元件
102b‧‧‧連接墊結構
104‧‧‧孔洞
104a‧‧‧第一孔洞
104b‧‧‧第二孔洞
106‧‧‧絕緣層
108‧‧‧導電層
110‧‧‧封裝層
112‧‧‧焊球

Claims (20)

  1. 一種半導體晶片封裝體，包含：一半導體晶片，具有一上表面及一下表面，且具有至少一感應元件設置於該上表面處、以及至少一連接墊結構電性連接於該感應元件；複數個孔洞，該些孔洞自該半導體晶片之該下表面朝該上表面延伸，包含：至少一個第一孔洞，該第一孔洞接觸該連接墊結構且露出該連接墊結構之一部分；以及至少一個第二孔洞，該第二孔洞不接觸該連接墊結構，且該第二孔洞之一孔徑小於該第一孔洞之一孔徑；以及一導電層自該半導體晶片之該下表面朝該上表面延伸，部分的該導電層位於該些孔洞之中，其中，位於該第一孔洞內的該導電層係透過該連接墊結構電性連接該感應元件。
  2. 如申請專利範圍第1項所述之半導體晶片封裝體，其中，該第一孔洞以及該第二孔洞自該半導體晶片之該下表面朝該上表面延伸之深度約略相同。
  3. 如申請專利範圍第1項所述之半導體晶片封裝體，其中，該第二孔洞之該孔徑不大於15微米。
  4. 如申請專利範圍第1項所述之半導體晶片封裝體，其中，該感應元件係一感光元件。
  5. 如申請專利範圍第4項所述之半導體晶片封裝體，其中，該感光元件之一受光表面至該封裝層之一底表面的一最短距離不大於100微米。
  6. 如申請專利範圍第1項所述之半導體晶片封裝體，更包含一絕緣層自該半導體晶片之該下表面朝該上表面延伸，部分的該絕緣層位於該些孔洞之中，其中該絕緣層係覆蓋各該第一孔洞之全部孔壁但僅覆蓋各該第二孔洞之一部分孔壁。
  7. 如申請專利範圍第6項所述之半導體晶片封裝體，其中該導電層位於該絕緣層下方。
  8. 如申請專利範圍第1項所述之半導體晶片封裝體，其中該半導體晶片之該上表面上不具有任何的承載基板。
  9. 一種半導體晶片封裝體的製造方法，包含：提供一基底，該基底定義有複數個半導體晶片區，該些半導體晶片區分別形成至少一半導體晶片，各該半導體晶片具有一上表面及一下表面，每一該半導體晶片形成有一感應元件設置於該上表面處以及一連接墊結構電性連接該感應元件，且該基底上具有一第一黏著層設置於各該半導體晶片之該上表面以及該感應元件之上、以及一承載基板設置於該第一黏著層之上；形成複數個孔洞於該半導體晶片中，自該半導體晶片之 該下表面朝該上表面延伸，該複數個孔洞包含：至少一個第一孔洞，該第一孔洞接觸該連接墊結構且露出該連接墊結構之一部分；以及至少一個第二孔洞，該第二孔洞不接觸該連接墊結構，且該第二孔洞之一孔徑小於該第一孔洞之一孔徑；以及形成一導電層於各該半導體晶片之該下表面下，且該導電層自各該半導體晶片之該下表面朝該上表面延伸，部分的該導電層位於該些孔洞之中，其中，位於該第一孔洞內的該導電層係透過該連接墊結構電性連接該感應元件。
  10. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，其中於形成該導電層之步驟後，進一步包含：沿各該半導體晶片區之間的複數條交界線由各該半導體晶片之該下表面朝該上表面預切割，使各該半導體晶片之間具有複數條切割道；形成至少一外部導電連結於各該半導體晶片之該下表面之下且電性連接該導電層；以及沿各該切割道切割，移除沿各該切割道之部分的該第一黏著層使各該半導體晶片分離但各該半導體晶片仍藉由位於各該半導體晶片上之該第一黏著層附著於該承載基板之下。
  11. 如申請專利範圍第10項所述之半導體晶片封裝體的製造方法，其中於沿各該切割道切割之步驟後，進一步包含：貼附一薄膜框載體連接各該半導體晶片之各該外部導 電連結，並移除位於各該半導體晶片上之該承載基板，以形成該半導體晶片封裝體。
  12. 如申請專利範圍第11項所述之半導體晶片封裝體的製造方法，更包含在該移除位於各該半導體晶片上之該承載基板之步驟後，貼附一第二黏著層於各該半導體晶片上之該第一黏著層之上，再移除該薄膜框載體。
  13. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，其中，該第一孔洞以及該第二孔洞係以相同製程步驟中同時形成。
  14. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，其中，該第一孔洞以及該第二孔洞自該半導體晶片之該下表面朝該上表面延伸之深度約略相同。
  15. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，其中，該第二孔洞之該孔徑不大於15微米。
  16. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，該形成一封裝層之步驟係以微影蝕刻的方式，使該封裝層形成對應於該導電層之圖案。
  17. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，其中，該感應元件係一感光元件。
  18. 如申請專利範圍第17項所述之半導體晶片封裝體的製造方法，其中，該感光元件之一受光表面至該封裝層之一底表面的一最短距離不大於100微米。
  19. 如申請專利範圍第9項所述之半導體晶片封裝體的製造方法，更包含形成一絕緣層於各該半導體晶片之該下表面下，並形成該導電層於該絕緣層下。
  20. 如申請專利範圍第19項所述之半導體晶片封裝體的製造方法，其中該絕緣層自各該半導體晶片之該下表面朝該上表面延伸，部分的該絕緣層位於該些孔洞之中，其中，該絕緣層係完整覆蓋該第一孔洞之孔壁且該絕緣層僅部分覆蓋該第二孔洞之孔壁。
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