TWI576428B - 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 - Google Patents
銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 Download PDFInfo
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- TWI576428B TWI576428B TW104127160A TW104127160A TWI576428B TW I576428 B TWI576428 B TW I576428B TW 104127160 A TW104127160 A TW 104127160A TW 104127160 A TW104127160 A TW 104127160A TW I576428 B TWI576428 B TW I576428B
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- formulation
- water
- cleaning composition
- taz
- ascorbic acid
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- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68481205P | 2005-05-26 | 2005-05-26 | |
| US73603605P | 2005-11-10 | 2005-11-10 | |
| US77312606P | 2006-02-13 | 2006-02-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201600594A TW201600594A (zh) | 2016-01-01 |
| TWI576428B true TWI576428B (zh) | 2017-04-01 |
Family
ID=37452361
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104127160A TWI576428B (zh) | 2005-05-26 | 2006-05-26 | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 |
| TW095118751A TWI418622B (zh) | 2005-05-26 | 2006-05-26 | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 |
| TW102111101A TWI507521B (zh) | 2005-05-26 | 2006-05-26 | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095118751A TWI418622B (zh) | 2005-05-26 | 2006-05-26 | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 |
| TW102111101A TWI507521B (zh) | 2005-05-26 | 2006-05-26 | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1888735B1 (ja) |
| JP (1) | JP2008543060A (ja) |
| KR (1) | KR20080025697A (ja) |
| IL (1) | IL187566A0 (ja) |
| SG (1) | SG162725A1 (ja) |
| TW (3) | TWI576428B (ja) |
| WO (1) | WO2006127885A1 (ja) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007111694A2 (en) | 2005-11-09 | 2007-10-04 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
| US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| KR101833158B1 (ko) * | 2007-05-17 | 2018-02-27 | 엔테그리스, 아이엔씨. | Ｃｍｐ후 세정 제제용 신규한 항산화제 |
| US8404626B2 (en) * | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
| US8361237B2 (en) | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| KR101751553B1 (ko) | 2009-06-30 | 2017-06-27 | 바스프 에스이 | 수성 알칼리 세정 조성물 및 그 사용 방법 |
| KR101039399B1 (ko) * | 2009-07-21 | 2011-06-08 | (주)펜앤프리 | 신호 발생 장치 |
| FR2965260B1 (fr) * | 2010-09-27 | 2012-08-31 | Arkema France | Composition neutralisante et biostatique pour fluides aqueux |
| JP5808649B2 (ja) * | 2010-11-12 | 2015-11-10 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
| JP2012182158A (ja) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | 研磨液、及びこの研磨液を用いた基板の研磨方法 |
| WO2012127336A1 (en) | 2011-03-21 | 2012-09-27 | Basf Se | Aqueous, nitrogen-free cleaning composition, preparation and use thereof |
| CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
| JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
| JP2015519723A (ja) * | 2012-03-18 | 2015-07-09 | インテグリス，インコーポレイテッド | バリア層との適合性および洗浄性能が改良されたｃｍｐ後配合物 |
| KR101406761B1 (ko) * | 2012-10-22 | 2014-07-02 | 주식회사 케이씨텍 | 세정액 조성물 및 이를 이용한 세정방법 |
| US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
| WO2014138064A1 (en) | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| JP6203525B2 (ja) * | 2013-04-19 | 2017-09-27 | 関東化學株式会社 | 洗浄液組成物 |
| SG11201509933QA (en) | 2013-06-06 | 2016-01-28 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
| CN105431506A (zh) | 2013-07-31 | 2016-03-23 | 高级技术材料公司 | 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂 |
| SG11201601158VA (en) | 2013-08-30 | 2016-03-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
| CN110225667B (zh) * | 2013-09-11 | 2023-01-10 | 花王株式会社 | 树脂掩模层用洗涤剂组合物及电路基板的制造方法 |
| EP3051577B1 (en) | 2013-11-08 | 2017-10-18 | Wako Pure Chemical Industries, Ltd. | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
| TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法 |
| WO2015095726A1 (en) | 2013-12-20 | 2015-06-25 | Entegris, Inc. | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| US20160340620A1 (en) * | 2014-01-29 | 2016-11-24 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| KR102420338B1 (ko) * | 2014-06-04 | 2022-07-13 | 엔테그리스, 아이엔씨. | 금속, 유전체 및 니트라이드 상용성을 가진 반사-방지 코팅 세정 및 에칭-후 잔류물 제거 조성물 |
| JP6445570B2 (ja) | 2014-08-29 | 2018-12-26 | 国立研究開発法人産業技術総合研究所 | デバイス固有情報の誤り率制御方法とデバイス固有情報の誤り率制御プログラム |
| CN117625325A (zh) * | 2015-01-13 | 2024-03-01 | Cmc材料股份有限公司 | 用于在化学机械抛光后清洁半导体晶片的清洁组合物及方法 |
| JP2017011225A (ja) * | 2015-06-25 | 2017-01-12 | 株式会社フジミインコーポレーテッド | 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 |
| US10400167B2 (en) * | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
| JP2018026461A (ja) * | 2016-08-10 | 2018-02-15 | 株式会社荏原製作所 | 化学機械研磨後の基板洗浄技術 |
| JP7156266B2 (ja) | 2017-03-17 | 2022-10-19 | 三菱ケミカル株式会社 | 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板 |
| TWI808159B (zh) * | 2018-04-26 | 2023-07-11 | 日商三菱瓦斯化學股份有限公司 | 樹脂組成物、疊層體、附樹脂組成物層之半導體晶圓、附樹脂組成物層之半導體搭載用基板、以及半導體裝置 |
| JP7220040B2 (ja) * | 2018-09-20 | 2023-02-09 | 関東化学株式会社 | 洗浄液組成物 |
| CN113774391B (zh) * | 2021-08-12 | 2023-08-04 | 上海新阳半导体材料股份有限公司 | 一种化学机械抛光后清洗液的应用 |
| CN113774392B (zh) * | 2021-08-12 | 2023-12-01 | 上海新阳半导体材料股份有限公司 | 一种用于化学机械抛光后的清洗液及其制备方法 |
| CN113774390B (zh) * | 2021-08-12 | 2023-08-04 | 上海新阳半导体材料股份有限公司 | 一种用于化学机械抛光后的清洗液及其制备方法 |
| US20230323248A1 (en) * | 2022-03-23 | 2023-10-12 | Entegris, Inc. | Post cmp cleaning composition |
| WO2023232682A1 (en) | 2022-05-31 | 2023-12-07 | Basf Se | Composition, its use and a process for cleaning substrates comprising cobalt and copper |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030083214A1 (en) * | 2000-03-21 | 2003-05-01 | Masahiko Kakizawa | Semiconductor wafer cleaning agent and cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| TW554258B (en) * | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
| US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
| US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
-
2006
- 2006-05-25 SG SG201003670-5A patent/SG162725A1/en unknown
- 2006-05-25 EP EP06771152.3A patent/EP1888735B1/en not_active Not-in-force
- 2006-05-25 KR KR1020077030418A patent/KR20080025697A/ko not_active Application Discontinuation
- 2006-05-25 WO PCT/US2006/020214 patent/WO2006127885A1/en active Application Filing
- 2006-05-25 JP JP2008513700A patent/JP2008543060A/ja not_active Withdrawn
- 2006-05-26 TW TW104127160A patent/TWI576428B/zh active
- 2006-05-26 TW TW095118751A patent/TWI418622B/zh active
- 2006-05-26 TW TW102111101A patent/TWI507521B/zh active
-
2007
- 2007-11-22 IL IL187566A patent/IL187566A0/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030083214A1 (en) * | 2000-03-21 | 2003-05-01 | Masahiko Kakizawa | Semiconductor wafer cleaning agent and cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1888735A4 (en) | 2011-01-19 |
| TW201329225A (zh) | 2013-07-16 |
| JP2008543060A (ja) | 2008-11-27 |
| TW201600594A (zh) | 2016-01-01 |
| SG162725A1 (en) | 2010-07-29 |
| WO2006127885A1 (en) | 2006-11-30 |
| IL187566A0 (en) | 2008-03-20 |
| EP1888735B1 (en) | 2013-08-07 |
| TWI418622B (zh) | 2013-12-11 |
| EP1888735A1 (en) | 2008-02-20 |
| TW200712198A (en) | 2007-04-01 |
| TWI507521B (zh) | 2015-11-11 |
| KR20080025697A (ko) | 2008-03-21 |
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