TWI575591B - Laminated wafer processing methods and adhesive film - Google Patents
Laminated wafer processing methods and adhesive film Download PDFInfo
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- TWI575591B TWI575591B TW103100635A TW103100635A TWI575591B TW I575591 B TWI575591 B TW I575591B TW 103100635 A TW103100635 A TW 103100635A TW 103100635 A TW103100635 A TW 103100635A TW I575591 B TWI575591 B TW I575591B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Description
本發明是有關於晶圓上配設有複數個晶片的積層晶圓的加工方法及適用於該加工方法的黏著片。 The present invention relates to a method of processing a laminated wafer in which a plurality of wafers are disposed on a wafer, and an adhesive sheet suitable for the processing method.
已知將複數個半導體裝置集成為1個封裝的作法的1種為，在三次元方向上堆疊封裝複數個半導體裝置晶片之CoW(Chip on Wafer)等的三次元封裝技術。CoW為，將晶圓上堆疊有晶片的積層晶圓的晶圓分割為各個個別的晶片，藉此，形成晶片上堆疊有晶片的積層晶片者(參照專利文獻1)。 One of the methods of integrating a plurality of semiconductor devices into one package is a three-dimensional packaging technique such as CoW (Chip on Wafer) in which a plurality of semiconductor device wafers are packaged in a three-dimensional direction. The CoW is formed by dividing a wafer of a stacked wafer on which a wafer is stacked on a wafer into individual wafers, thereby forming a laminate wafer on which a wafer is stacked (see Patent Document 1).
另一方面，要分割此種晶圓，通常是以使切削裝置的切削刀片切入晶圓中的機械加工進行之晶片切割(dicing)(參照專利文獻2)。又，近年來，則開發出以雷射光束照射晶圓內部形成改質層後，再賦予晶圓外力並以改質層作為分割起點之分割方法(參照專利文獻3)，並提出在該方法中用於賦予外力之使貼附於晶圓上的黏著片擴張之技術(參照專利文獻4)。 On the other hand, in order to divide such a wafer, it is usually dicing by a machining process in which a cutting insert of a cutting device is cut into a wafer (refer to Patent Document 2). In addition, in recent years, a method of dividing a laser beam into a modified layer and applying a foreign force to the wafer and using the modified layer as a starting point of the division has been developed (see Patent Document 3). A technique for expanding an adhesive sheet attached to a wafer for imparting an external force (see Patent Document 4).
專利文獻1：日本專利特開2012-209522號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2012-209522
專利文獻2：日本專利特開2007-214201號公報 Patent Document 2: Japanese Patent Laid-Open Publication No. 2007-214201
專利文獻3：日本專利特許第3408805號公報 Patent Document 3: Japanese Patent No. 3408805
專利文獻4：日本專利特開2010-034250號公報 Patent Document 4: Japanese Patent Laid-Open Publication No. 2010-034250
然而，在內部製作置入配線與電極等的中介層晶圓(Interposer wafer)，作為可實現三次元封裝的晶圓而被實用化。在將此種中介層晶圓上堆疊有複數個晶片的積層晶圓分割成各個個別的晶片而得到的積層晶片中，有針對在中介層晶圓上所形成的金屬凸塊(bump)等的電極進行特性檢查的情況。為此，於分割為積層晶片後，必須以中介層晶圓側作為頂面，以黏著片支撐晶片側，以使該檢查可行。因此，如通常所實施之在晶圓側，亦即中介層晶圓側貼附黏著片以進行分割的情況中，若於晶圓分割後，實施在晶片側貼附黏著片以將晶圓側的黏著片剝離之所謂的黏著片轉移步驟，將可針對積層晶片的中介層晶圓進行檢查。但是，這種轉移步驟較費工費時而會導致生產性下降。 However, an interposer wafer in which wirings, electrodes, and the like are placed is fabricated in the interior, and is practically used as a wafer capable of realizing a three-dimensional package. In a laminated wafer obtained by dividing a laminated wafer in which a plurality of wafers are stacked on each of the interposer wafers into individual wafers, there are metal bumps formed on the interposer wafers. The case where the electrode is subjected to characteristic inspection. For this reason, after dividing into a laminated wafer, the wafer side of the interposer must be used as the top surface, and the wafer side is supported by the adhesive sheet to make the inspection feasible. Therefore, in the case where the adhesive sheet is attached to the wafer side, that is, the interposer wafer side is usually divided, in the case where the wafer is divided, the adhesive sheet is attached on the wafer side to be the wafer side. The so-called adhesive sheet transfer step of the adhesive sheet peeling off will allow inspection of the interposer wafer of the laminated wafer. However, this transfer step is time consuming and labor intensive.
於是，藉著在積層晶圓的晶片側貼附黏著片，於使中介層晶圓側露出的狀態下分割中介層晶圓，將可解除進行黏著片轉移之必要。但是，由於積層晶圓並未在外周 部堆疊晶片，在中介層晶圓側的晶片區域與外周部之間會有段差，因此，於晶片側貼附了黏著片的情況，會發生中介層晶圓的外周部向黏著片側彎曲的現象。 Then, by attaching the adhesive sheet to the wafer side of the laminated wafer, the interposer wafer is divided while the interposer wafer side is exposed, and the transfer of the adhesive sheet can be eliminated. However, since the laminated wafer is not in the periphery When the wafer is stacked, there is a step difference between the wafer region on the interposer wafer side and the outer peripheral portion. Therefore, when the adhesive sheet is attached to the wafer side, the outer peripheral portion of the interposer wafer is bent toward the adhesive sheet side. .
發生如此之中介層晶圓的外周部彎曲時，則在中介層晶圓中形成上述分割起點以進行分割的情況中，將會因彎曲量而產生無法在晶片區域與外周部之邊界部分適當地形成該分割起點的問題。例如，分割起點為以雷射光束照射的改質層的情況時，將因聚光點偏差而無法形成改質層，又，分割起點為雷射加工或切削加工之溝的情況時，則溝的深度會變得不夠。而且，就算可形成分割起點，在上述專利文獻4所記載的藉由黏著片的擴張而進行的晶圓分割方法中，由於有上述段差而使黏著片無法充分地貼附於中介層晶圓的外周部，在晶片區域與外周部的邊界部分會產生擴張的外力難以傳達到該邊界部分、無法分割最外周部的積層晶片之問題。 When the outer peripheral portion of the interposer wafer is bent, when the division starting point is formed in the interposer wafer to be divided, the amount of warpage may be insufficiently formed at the boundary portion between the wafer region and the outer peripheral portion. The problem of forming the starting point of the segmentation is formed. For example, when the starting point of the division is a modified layer that is irradiated with a laser beam, the modified layer cannot be formed due to the deviation of the condensed spot, and when the starting point is a laser processing or a groove for cutting, the groove is formed. The depth will not be enough. In addition, in the wafer dividing method by the expansion of the adhesive sheet described in Patent Document 4, the adhesive sheet cannot be sufficiently attached to the interposer wafer due to the above-described step. In the outer peripheral portion, at the boundary portion between the wafer region and the outer peripheral portion, there is a problem in that it is difficult to transmit the external force of expansion to the boundary portion and to separate the laminated wafer at the outermost peripheral portion.
本發明鑒於上述情況，其主要技術課題在於提供，使晶圓上堆疊有複數個晶片的積層晶圓，即使在晶片側貼附了黏著片的狀態下，也能確實地將晶圓分割為各個個別的積層晶片的積層晶圓的加工方法及黏著片。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a laminated wafer in which a plurality of wafers are stacked on a wafer, and the wafer can be surely divided into individual states even in a state in which an adhesive sheet is attached to the wafer side. Processing method and adhesive sheet of laminated wafer of individual laminated wafers.
本發明之積層晶圓的加工方法為，具備晶圓和分別堆疊在以交叉的複數條分割預定線劃分出的該晶圓表面的各區域中的晶片，並具有堆疊有複數個該晶片的晶片區域和圍繞該晶片區域的外周剩餘區域，且在該晶片區域和 該外周剩餘區域之間形成段差的積層晶圓的加工方法。其特徵在於具備：將黏著片貼附於前述積層晶圓的前述晶片側的黏著片貼附步驟；實施了該黏著片貼附步驟後，由前述積層晶圓的晶圓背面側沿對應於前述分割預定線的區域形成分割起點的分割起點形成步驟；及實施了該分割起點形成步驟後，賦予前述積層晶圓外力以以前述分割起點為起始點來分割前述晶圓的分割步驟。前述黏著片具有基材層、配設在該基材層上的糊層，和對應於前述積層晶圓的前述外周剩餘區域形成在該糊層上的突起部，且至少該突起部的頂面對前述晶圓具有黏著性。實施了前述黏著片貼附步驟後，是在前述積層晶圓的前述晶片被貼附至前述黏著片的前述糊層，並且前述外周剩餘區域受到前述突起部支撐的狀態下，對前述積層晶圓實施前述分割起點形成步驟和前述分割步驟(請求項1)。 The method for processing a multilayer wafer of the present invention comprises: a wafer and a wafer stacked in each region of the wafer surface divided by a plurality of intersecting predetermined lines, and having a wafer in which a plurality of the wafers are stacked a region and a peripheral remaining region surrounding the wafer region, and in the wafer region and A method of processing a laminated wafer in which a step difference is formed between the remaining peripheral regions. An adhesive sheet attaching step of attaching an adhesive sheet to the wafer side of the laminated wafer; and after performing the adhesive sheet attaching step, a wafer back side edge of the laminated wafer corresponds to the aforementioned a division start point forming step of forming a division start point in the region dividing the predetermined line; and a division step of dividing the wafer by applying the external force of the laminated wafer after the division start point forming step is started from the division start point. The adhesive sheet has a base material layer, a paste layer disposed on the base material layer, and a protrusion formed on the paste layer corresponding to the outer peripheral remaining region of the laminated wafer, and at least a top surface of the protrusion portion Adhesive to the aforementioned wafer. After the adhesive sheet attaching step is performed, the wafer of the laminated wafer is attached to the paste layer of the adhesive sheet, and the outer peripheral region is supported by the protruding portion, and the laminated wafer is laminated. The aforementioned division start point forming step and the aforementioned dividing step (request item 1) are carried out.
本發明之積層晶圓的加工方法為，在黏著片貼附步驟中於晶片側貼附有黏著片的積層晶圓，藉由使黏著片的突起部的頂面黏著於比積層晶圓的段差更外周側的外周剩餘區域，變成該外周剩餘區域受到突起部支撐的狀態。因此，可抑制晶圓的外周剩餘區域向黏著片側彎曲，其結果，要藉由在晶圓形成分割起點並賦予外力以將晶圓分割成積層晶片時，將變得可適當地形成分割起點。因此，就算是在使積層晶圓的晶片側貼附於黏著片的狀態下，也可對各個個別的晶片分割晶圓，尤其是在擴張黏著片以分割晶圓的情況中，也可以分割最外周部的積層晶片。又，由 於在分割晶圓前會將黏著片貼附至積層晶圓的晶片側，使以黏著片貼附於晶圓側的狀態作分割的情況中為必要之黏著片轉移步驟變成不需要。 The method for processing a laminated wafer of the present invention is to laminate a stacked wafer with an adhesive sheet on the wafer side in the adhesive sheet attaching step, by sticking the top surface of the protruding portion of the adhesive sheet to the step of the laminated wafer The outer peripheral remaining area on the outer peripheral side is in a state in which the outer peripheral remaining area is supported by the protruding portion. Therefore, it is possible to suppress the peripheral remaining region of the wafer from being bent toward the adhesive sheet side. As a result, when the wafer is divided into the laminated wafer by forming the division starting point on the wafer and applying an external force, the division starting point can be appropriately formed. Therefore, even in a state in which the wafer side of the laminated wafer is attached to the adhesive sheet, the wafer can be divided for each individual wafer, and in particular, when the adhesive sheet is expanded to divide the wafer, the maximum division can be performed. A laminated wafer on the outer circumference. Again In the case where the adhesive sheet is attached to the wafer side of the laminated wafer before the wafer is divided, and the adhesive sheet is attached to the wafer side, the adhesive sheet transfer step becomes unnecessary.
在本發明的前述分割步驟中，包含藉由擴張前述黏著片對前述晶圓賦予外力的形態(請求項2)。在此形態中，如上述地，可使晶圓最外周部的積層晶片也能與其他積層晶片同樣地分割。 In the above-described dividing step of the present invention, a form in which an external force is applied to the wafer by expanding the adhesive sheet is included (request 2). In this aspect, as described above, the laminated wafer at the outermost peripheral portion of the wafer can be divided in the same manner as other laminated wafers.
又，在前述分割起點形成步驟中，包含照射對前述晶圓具有穿透性波長的雷射光束以在該晶圓內部形成改質層之形態(請求項3)。 Further, in the dividing start point forming step, a laser beam having a penetrating wavelength for the wafer is irradiated to form a modified layer inside the wafer (request item 3).
其次，本發明的黏著片為，在上述請求項1~3所記載的積層晶圓的加工方法中所使用的黏著片，其特徵在於具有：基材層；配設在該基材層上的糊層；及對應於前述積層晶圓的前述外周剩餘區域形成在該糊層上的突起部，至少該突起部的頂面對前述積層晶圓的前述晶圓具有黏著性。 The adhesive sheet of the present invention, wherein the adhesive sheet used in the method for processing a laminated wafer according to any one of claims 1 to 3, further comprising: a base material layer; and the base material layer disposed on the base material layer a paste layer; and a protrusion formed on the paste layer corresponding to the outer peripheral remaining region of the build-up wafer, at least the top of the protrusion portion having adhesiveness to the wafer facing the laminated wafer.
藉由本發明，可達成所提供之使晶圓上堆疊有複數個晶片的積層晶圓，即使在將晶片側貼附至黏著片的狀態下，也能確實地將晶圓分割成各個個別的積層晶片的積層晶圓的加工方法及黏著片的功效。 According to the present invention, it is possible to achieve a laminated wafer in which a plurality of wafers are stacked on a wafer, and the wafer can be surely divided into individual laminates even when the wafer side is attached to the adhesive sheet. The processing method of the stacked wafer of the wafer and the effect of the adhesive sheet.
1‧‧‧積層晶圓 1‧‧‧Laminated wafer
1A‧‧‧晶片區域 1A‧‧‧ wafer area
1B‧‧‧外周剩餘區域 1B‧‧‧ remaining area of the periphery
1c‧‧‧積層晶片 1c‧‧‧Layered wafer
10‧‧‧晶圓 10‧‧‧ wafer
10a‧‧‧晶圓表面 10a‧‧‧ wafer surface
10b‧‧‧晶圓背面 10b‧‧‧ wafer back
10c‧‧‧改質層(分割起點) 10c‧‧‧Modification layer (segmentation starting point)
11‧‧‧分割預定線 11‧‧‧Division line
12‧‧‧區域 12‧‧‧ Area
15‧‧‧晶片 15‧‧‧chip
16‧‧‧段差 16‧‧ ‧ paragraph difference
2‧‧‧黏著片 2‧‧‧Adhesive tablets
21‧‧‧黏著片基材層 21‧‧‧Adhesive substrate layer
22‧‧‧黏著片之糊層 22‧‧‧Adhesive layer
3‧‧‧突起部 3‧‧‧Protruding
31‧‧‧基材層 31‧‧‧Substrate layer
32‧‧‧糊層 32‧‧ ‧ paste layer
4‧‧‧環狀框架 4‧‧‧Ring frame
5‧‧‧保持機構 5‧‧‧ Keeping institutions
51‧‧‧保持台 51‧‧‧ Keeping the table
51a‧‧‧保持面 51a‧‧‧ Keep face
52‧‧‧夾鉗機構 52‧‧‧Clamp mechanism
6‧‧‧雷射照射機構 6‧‧‧Laser illumination mechanism
7‧‧‧擴張裝置 7‧‧‧Expansion device
71‧‧‧圓筒台 71‧‧‧Cylinder table
72‧‧‧升降台 72‧‧‧ Lifting platform
73‧‧‧汽缸裝置 73‧‧‧Cylinder installation
74‧‧‧活塞桿 74‧‧‧ piston rod
75‧‧‧夾鉗機構 75‧‧‧clamp mechanism
L‧‧‧雷射光束 L‧‧‧Laser beam
圖1為以本發明之一實施形態的加工方法分割的積層晶圓的(a)立體圖、(b)側視圖、(c)局部放大平面圖； 圖2為本發明之一實施形態的黏著片之(a)立體圖、(b)局部放大截面圖；圖3為以分解狀態表示在一實施形態的加工方法中被貼附至黏著片的框架以及積層晶圓的立體圖；圖4(a)~(b)為表示相同加工方法的黏著片貼附步驟的側視截面圖；圖5為表示相同加工方法的分割起點形成步驟的(a)側視截面圖、(b)顯示改質層形成之細部的圖；圖6為透過分割起點形成步驟在晶圓內部形成有改質層的積層晶圓的局部側視截面圖；及圖7(a)~(b)為表示一實施形態的加工方法的分割步驟的側視截面圖。 1 is a (a) perspective view, (b) side view, and (c) partially enlarged plan view of a laminated wafer divided by a processing method according to an embodiment of the present invention; Figure 2 is a perspective view of a (a) perspective view of an adhesive sheet according to an embodiment of the present invention, and (b) a partially enlarged cross-sectional view of the adhesive sheet; and Figure 3 is a view showing, in an exploded state, a frame attached to the adhesive sheet in the processing method of the embodiment; FIG. 4(a) to FIG. 4(b) are side cross-sectional views showing the attaching step of the adhesive sheet of the same processing method; FIG. 5 is a side view showing the step of forming the dividing starting point of the same processing method (a) a cross-sectional view, (b) a view showing a detail of a modified layer formation; and FIG. 6 is a partial side cross-sectional view of a laminated wafer in which a modified layer is formed inside a wafer through a dividing start point forming step; and FIG. 7(a) ~(b) is a side cross-sectional view showing a dividing step of the processing method of one embodiment.
[1]積層晶圓 [1] laminated wafer
圖1表示在一實施形態中，被分割為各個個別的積層晶片的積層晶圓1。積層晶圓1為，在內部製作置入之配線或電極等的圓板狀的中介層晶圓(以下簡稱為晶圓)10的表面10a上堆疊有多數個矩形晶片15者。晶片15為半導體裝置等，各晶片15被堆疊在如圖1(c)所示之以格子狀的分割預定線11在晶圓10之表面10a所劃分出的矩形狀的各區域12中。晶圓10將預先對背面10b側作研磨修整以薄化加工為預定厚度。 Fig. 1 shows a laminated wafer 1 which is divided into individual individual laminated wafers in one embodiment. The laminated wafer 1 is formed by stacking a plurality of rectangular wafers 15 on the surface 10a of a disk-shaped interposer wafer (hereinafter simply referred to as a wafer) 10 on which wirings or electrodes to be placed are formed. The wafer 15 is a semiconductor device or the like, and each of the wafers 15 is stacked in each of the rectangular regions 12 defined by the grid-shaped dividing line 11 as shown in FIG. 1(c) on the surface 10a of the wafer 10. The wafer 10 is subjected to polishing trimming on the side of the back surface 10b in advance to be thinned to a predetermined thickness.
積層晶圓1被區分成堆疊有多數個晶片15之略矩 形狀的晶片區域1A和，未堆疊晶片15的外周部之外周剩餘區域1B。晶片15的厚度為例如100μm左右，因此，如圖1(b)所示，在晶片區域1A和圍繞晶片區域1A的外周剩餘區域1B之間，形成對應晶片15之厚度的段差16。 The laminated wafer 1 is divided into a slight moment in which a plurality of wafers 15 are stacked The wafer area 1A of the shape and the outer peripheral portion 1B of the outer peripheral portion of the wafer 15 are not stacked. The thickness of the wafer 15 is, for example, about 100 μm. Therefore, as shown in FIG. 1(b), a step 16 corresponding to the thickness of the wafer 15 is formed between the wafer region 1A and the peripheral remaining region 1B surrounding the wafer region 1A.
[2]黏著片 [2] Adhesive film
圖2顯示被貼附至上述積層晶圓1的一實施形態的黏著片2。該黏著片2為，如圖2(b)所示，在PO(聚烯烴)、PVC(聚氯乙烯)、PE(聚對苯二甲酸乙二酯)等具有柔軟性的樹脂片所製成的基材層21的單面上，形成有橡膠系或丙烯酸系樹脂所製成的糊層22者。該黏著片2的糊層22側，配設有環狀之突起部3。 FIG. 2 shows an adhesive sheet 2 attached to one embodiment of the laminated wafer 1. The adhesive sheet 2 is made of a flexible resin sheet such as PO (polyolefin), PVC (polyvinyl chloride) or PE (polyethylene terephthalate) as shown in Fig. 2 (b). On one surface of the base material layer 21, a paste layer 22 made of a rubber-based or acrylic resin is formed. An annular projection 3 is disposed on the paste layer 22 side of the adhesive sheet 2.
突起部3具有對應晶圓10的外周剩餘區域1B的大小，並形成如圖2(b)所示之具有一定寬度的截面矩形。突起部3之內徑被設定在比積層晶圓1的晶片區域1A還大，而且比晶圓10的外徑小之範圍中，又，突起部3的外徑被設定為比晶圓10的外徑還大。 The protrusion 3 has a size corresponding to the outer peripheral remaining area 1B of the wafer 10, and forms a rectangular cross section having a certain width as shown in Fig. 2(b). The inner diameter of the protrusion 3 is set larger than the wafer area 1A of the laminated wafer 1 and is smaller than the outer diameter of the wafer 10, and the outer diameter of the protrusion 3 is set to be larger than that of the wafer 10. The outer diameter is also large.
突起部3與如圖2(b)所示之黏著片2為相同的結構組成，亦即，即使用在上述PO、PVC等具有柔軟性的樹脂所製成的基材層31上形成有糊層32之膠帶所構成之物上，以將基材層31側貼附至黏著片2之糊層22上進行配設。因此，在突起部3的頂面形成糊層32，而具有黏著性。將突起部3之厚度設定為，積層晶圓1之上述段差16的高度，即與晶片15的厚度為相同的程度。亦即，用於構成突起部3的膠帶厚度為因應晶片15之厚度進行選擇者，又，在比晶片 15薄的膠帶的情況中，則藉由使複數層膠帶堆疊以構成與晶片15之厚度相同的突起部3。 The protruding portion 3 has the same structural composition as the adhesive sheet 2 shown in Fig. 2(b), that is, a paste formed on the base material layer 31 made of a flexible resin such as PO or PVC described above. The material of the layer 32 is attached to the paste layer 22 of the adhesive sheet 2 by attaching the base material layer 31 side. Therefore, the paste layer 32 is formed on the top surface of the protrusion 3, and has adhesiveness. The thickness of the protrusion 3 is set such that the height of the step 16 of the laminated wafer 1 is the same as the thickness of the wafer 15. That is, the thickness of the tape for constituting the protrusion 3 is selected in accordance with the thickness of the wafer 15, and is also in the ratio of the wafer. In the case of a 15 thin tape, a plurality of layers of tape are stacked to form the same projection 3 as the thickness of the wafer 15.
[3]加工方法 [3] Processing method
接著，針對沿分割預定線11分割上述積層晶圓1之晶圓10以得到多數個積層晶片之一實施形態的相關加工方法作說明。 Next, a description will be given of a related processing method in which the wafer 10 of the laminated wafer 1 is divided along the dividing line 11 to obtain one embodiment of a plurality of laminated wafers.
[3-1]黏著片貼附步驟 [3-1] Adhesive patch attachment step
首先，將如圖3所示之操作用環狀框架4配設至上述黏著片2的突起部3的周圍。框架4是由不銹鋼等具有剛性之金屬板等所製成者，且內周緣形成圓形，內徑形成為比突起部3的外徑還大。將框架4安置在與突起部3成同心狀的位置，並如圖4所示地貼附至黏著片2的糊層22。 First, the operation annular frame 4 as shown in FIG. 3 is disposed around the projection 3 of the adhesive sheet 2. The frame 4 is made of a rigid metal plate or the like such as stainless steel, and has an inner peripheral edge formed in a circular shape, and an inner diameter formed to be larger than the outer diameter of the protruding portion 3. The frame 4 is placed at a position concentric with the protrusion 3, and is attached to the paste layer 22 of the adhesive sheet 2 as shown in FIG.
接著如圖4所示地，將積層晶圓1之晶片15側貼附至附有框架4的黏著片2。亦即，如圖4(a)所示，使晶片15面對突起部3內側之黏著片2的糊層22，而且，以使外周剩餘區域1B對應突起部3的方式使積層晶圓1面對黏著片2配置，由該狀態至如圖4(b)所示地，使各晶片15貼附至糊層22，同時將晶圓10之表面10a側之外周剩餘區域1B貼附至突起部3的糊層32。藉此，積層晶圓1中的各晶片15被貼附至糊層22而使晶圓10之背面10b露出，且晶圓10之表面10a側的外周剩餘區域1B被貼附至突起部3之糊層32而變成受到該突起部3支撐的狀態。由於突起部3之厚度與晶片15的厚度為相同程度，晶圓10之外周剩餘區域1B不會朝黏著片2側彎曲，而能與晶片區域1A位於相同的平面上使晶圓10整 體保持平坦。此外，作為得到附有框架4之黏著片2上貼附有積層晶圓1之狀態的順序並不限於上述，例如使積層晶圓1貼附至黏著片2之後，再將框架4貼附至黏著片2亦可。 Next, as shown in FIG. 4, the wafer 15 side of the laminated wafer 1 is attached to the adhesive sheet 2 to which the frame 4 is attached. That is, as shown in Fig. 4 (a), the wafer 15 faces the paste layer 22 of the adhesive sheet 2 on the inner side of the projection 3, and the laminated wafer 1 is faced so that the outer peripheral remaining region 1B corresponds to the projection 3. The adhesive sheet 2 is disposed, and from this state, as shown in FIG. 4(b), each of the wafers 15 is attached to the paste layer 22, and the peripheral remaining region 1B on the surface 10a side of the wafer 10 is attached to the projections. 3 paste layer 32. Thereby, each wafer 15 in the laminated wafer 1 is attached to the paste layer 22 to expose the back surface 10b of the wafer 10, and the peripheral remaining area 1B on the surface 10a side of the wafer 10 is attached to the protrusion 3 The paste layer 32 is in a state of being supported by the protrusions 3. Since the thickness of the protrusion 3 is the same as the thickness of the wafer 15, the remaining area 1B of the wafer 10 is not bent toward the side of the adhesive sheet 2, and can be placed on the same plane as the wafer area 1A to make the wafer 10 The body remains flat. Further, the order of the state in which the laminated wafer 1 is attached to the adhesive sheet 2 with the frame 4 is not limited to the above. For example, after the laminated wafer 1 is attached to the adhesive sheet 2, the frame 4 is attached thereto. The adhesive sheet 2 can also be used.
[3-2]分割起點形成步驟 [3-2] Segmentation starting point forming step
接著，從積層晶圓1之晶圓10的背面10b側沿著對應分割預定線11的區域形成分割起點。分割起點雖然可舉例為，例如由雷射加工或切削加工所形成之溝，但在此是以雷射工之改質層作為分割起點，該改質層之形成如下。 Next, a division starting point is formed from the side of the back surface 10b of the wafer 10 of the laminated wafer 1 along the region corresponding to the planned dividing line 11. Although the starting point of the division may be, for example, a groove formed by laser processing or cutting, the reforming layer of the laser is used as the starting point of the division, and the modified layer is formed as follows.
如圖5所示，在保持機構5中保持積層晶圓1使背面10b側露出，藉由沿分割預定線11照射來自雷射照射機構6之對晶圓10具有穿透性波長的雷射光束L，在晶圓10內部形成改質層10c。如圖5(b)所示，雷射光束L之聚光點被定位在離背面10b預定深度處，藉此沿分割預定線11在晶圓10的內部形成改質層10c。改質層10c具有比晶圓10內其他部分的強度還要低的特性，對晶圓10賦予外力則變成分割起點，使晶圓10可沿分割預定線11被分割。 As shown in FIG. 5, the laminated wafer 1 is held in the holding mechanism 5 to expose the back surface 10b side, and the laser beam having the penetrating wavelength to the wafer 10 from the laser irradiation mechanism 6 is irradiated along the dividing line 11 to be irradiated. L, the modified layer 10c is formed inside the wafer 10. As shown in FIG. 5(b), the light collecting point of the laser beam L is positioned at a predetermined depth from the back surface 10b, whereby the reforming layer 10c is formed inside the wafer 10 along the dividing planned line 11. The reforming layer 10c has a lower characteristic than the other portions in the wafer 10. When an external force is applied to the wafer 10, the starting point of the division becomes a division starting point, and the wafer 10 can be divided along the dividing line 11.
沿分割預定線11之雷射光束L的掃描雖然可藉由讓保持機構5和雷射照射機構6在水平方向上相對移動而完成，但是在此是做成使保持機構5側移動。此外，做成使雷射照射機構6側移動亦可，也可形成使保持機構5和雷射照射機構6雙方移動的構成。 The scanning of the laser beam L along the dividing line 11 can be performed by relatively moving the holding mechanism 5 and the laser irradiation mechanism 6 in the horizontal direction, but here, the holding mechanism 5 side is moved. Further, the laser irradiation unit 6 may be moved, and the holding mechanism 5 and the laser irradiation unit 6 may be configured to move.
保持機構5是在具有保持積層晶圓1之水平保持面51a的圓板狀保持台51的周圍所配設之複數個用於保持框架4之夾鉗機構52，積層晶圓1則是透過黏著片2載置在保 持面51a上，藉由以夾鉗機構52挾持框架4，讓黏著片2能以被賦予朝向徑方向外側張力的狀態保持在保持機構5上。 The holding mechanism 5 is a plurality of clamping mechanisms 52 for holding the frame 4 disposed around the disk-shaped holding table 51 holding the horizontal holding surface 51a of the laminated wafer 1, and the laminated wafer 1 is adhered Slice 2 is placed in the insurance On the holding surface 51a, the frame 4 is held by the clamp mechanism 52, and the adhesive sheet 2 can be held by the holding mechanism 5 in a state of being biased outward in the radial direction.
保持機構5可在一單向(在圖5為左右方向)及與該單向垂直的其他方向上移動，並以中心作為旋轉軸將其支撐為可旋轉，另一方面，雷射照射機構6受到固定式支撐。並且藉著一邊使保持機構5移動以進行加工傳送，一邊以雷射照射機構6沿分割預定線11照射雷射光束L，以沿單向延伸之分割預定線11在晶圓10內部形成改質層10c，藉由使其在其他方向移動可進行照射雷射光束的分割預定線11的分度。又，藉由讓保持機構5旋轉90°，可對未加工的分割預定線11照射電射光束L。 The holding mechanism 5 is movable in a one-way direction (left-right direction in FIG. 5) and other directions perpendicular to the one-way direction, and supports the center as a rotation axis to be rotatable, and on the other hand, the laser irradiation mechanism 6 Subject to fixed support. Further, by moving the holding mechanism 5 for processing transfer, the laser beam L is irradiated along the dividing line 11 by the laser irradiation mechanism 6 to form a modified inside the wafer 10 along the unidirectionally extending dividing line 11. The layer 10c can perform indexing of the dividing line 11 for irradiating the laser beam by moving it in other directions. Further, by rotating the holding mechanism 5 by 90°, the unprocessed dividing line 11 can be irradiated with the electric light beam L.
[3-3]分割步驟 [3-3] Splitting step
如圖6所示，於已在上述分割起點形成步驟中沿所有的分割預定線11在晶圓10內形成改質層10c後，將積層晶圓1從保持機構5中搬出，並將積層晶圓1搬入如圖7所示之擴張裝置7中。 As shown in FIG. 6, after the reforming layer 10c is formed in the wafer 10 along all the planned dividing lines 11 in the dividing starting point forming step, the laminated wafer 1 is carried out from the holding mechanism 5, and the laminated crystal is removed. The circle 1 is carried into the expansion device 7 as shown in FIG.
擴張裝置7具備，載置晶圓10之圓筒台71和，配設在圓筒台71周圍的環狀升降台72。藉由使圓筒台71之外徑比黏著片2之突起部3還要大徑，使積層晶圓1可透過黏著片2載置在水平上端開口部。使升降台72與圓筒台71為同心狀，且為可升降地被配設，並藉由讓使用氣壓或油壓之流體壓式汽缸裝置73的活塞桿74伸縮而升降。升降台72中配設有在圓周方向相間隔的複數個夾鉗機構75。 The expansion device 7 includes a cylindrical stage 71 on which the wafer 10 is placed and an annular lifting table 72 disposed around the cylindrical stage 71. By making the outer diameter of the cylindrical stage 71 larger than the projection 3 of the adhesive sheet 2, the laminated wafer 1 can be placed on the horizontal upper end opening through the adhesive sheet 2. The elevating table 72 and the cylindrical table 71 are concentrically arranged, and are arranged to be lifted and lowered, and are moved up and down by the expansion and contraction of the piston rod 74 of the fluid pressure type cylinder device 73 using air pressure or oil pressure. A plurality of clamp mechanisms 75 spaced apart in the circumferential direction are disposed in the lift table 72.
實施分割步驟為，如圖7(a)所示之使升降台72的 高度位置與圓筒台71之上端開口部同高，透過黏著片2使積層晶圓1載置於圓筒台71之上端開口部，同時以夾鉗機構75挾持並固定框架4，以使黏著片2形成水平狀態地將積層晶圓1設置在圓筒台71上。接著如圖7(b)所示，使各汽缸裝置73的活塞桿74同時縮短，使升降台72下降。 The dividing step is performed such that the lifting platform 72 is as shown in FIG. 7(a). The height position is the same as the opening of the upper end of the cylindrical table 71, and the laminated wafer 1 is placed on the upper end of the cylindrical table 71 through the adhesive sheet 2, and the frame 4 is held and fixed by the clamp mechanism 75 to adhere. The sheet 2 is placed on the cylindrical stage 71 in a horizontal state. Next, as shown in FIG. 7(b), the piston rod 74 of each cylinder device 73 is simultaneously shortened, and the elevating table 72 is lowered.
當升降台72下降則黏著片2會朝徑方向外側被拉伸而擴張，隨著黏著片2的擴張，會對晶圓10賦予相同地朝向徑方向外側的拉伸外力。於是，晶圓10以改質層10c為起點沿分割預定線11被分割，使積層晶圓1被分割為分割的晶圓上堆疊有1個晶片15之各個個別的積層晶片1c。 When the elevating table 72 is lowered, the adhesive sheet 2 is stretched and expanded outward in the radial direction, and as the adhesive sheet 2 is expanded, the wafer 10 is given the same tensile external force in the radial direction. Then, the wafer 10 is divided along the division planned line 11 starting from the modified layer 10c, and the laminated wafer 1 is divided into individual laminated wafers 1c in which one wafer 15 is stacked on the divided wafer.
經以上而結束分割步驟，之後，對黏著片2上貼附著晶片15之狀態的各積層晶片1c所形成之背面10b露出的晶圓10上的例如金屬凸塊等的電極，實施特性檢查。該檢查後，將積層晶片1c從黏著片2中拾取出以移送到接下來的步驟。 After the division step is completed as described above, the electrode such as a metal bump on the wafer 10 exposed on the back surface 10b formed by the laminated wafer 1c in the state in which the wafer 15 is adhered to the adhesive sheet 2 is subjected to characteristic inspection. After this inspection, the laminated wafer 1c is picked up from the adhesive sheet 2 to be transferred to the next step.
[4]一實施形態的作用效果 [4] The effect of an embodiment
透過上述之一實施形態，在黏著片貼附步驟中於晶片15側貼附有黏著片2的積層晶圓1，藉由使黏著片2的突起部3頂面之糊層32黏著於比積層晶圓1的段差16更外周側的晶圓10的表面10a側的外周剩餘區域1B，變成該外周剩餘區域1B受到突起部3支撐的狀態。因此，藉由使晶圓10的外周剩餘區域1B抵接於突起部3，可抑制其朝黏著片2側彎曲。 According to one embodiment described above, the laminated wafer 1 having the adhesive sheet 2 attached to the wafer 15 side in the adhesive sheet attaching step is adhered to the specific layer by the paste layer 32 on the top surface of the protruding portion 3 of the adhesive sheet 2. The stepped portion 16 of the wafer 1 and the outer peripheral remaining region 1B on the surface 10a side of the wafer 10 on the outer peripheral side are in a state in which the outer peripheral remaining region 1B is supported by the protruding portion 3. Therefore, by causing the outer peripheral remaining region 1B of the wafer 10 to abut against the protruding portion 3, it is suppressed from being bent toward the adhesive sheet 2 side.
在此狀態下，藉由實施分割起點形成步驟，使聚光點可定位於晶片區域1A與外周剩餘區域1B的邊界部分 之最外周部的分割預定線11且在晶圓10內的預定深度位置以照射雷射光束L，並適當地形成改質層10c。又，由於突起部3的頂面透過糊層32黏著於晶圓10的表面10a側的外周剩餘區域1B，在分割步驟之黏著片2之擴張時，擴張的外力也可充分地傳送到最外周部之分割預定線11，使最外周部的積層晶片1c也可與其他積層晶片1c同樣地分割。 In this state, by performing the division start point forming step, the condensed spot can be positioned at the boundary portion between the wafer area 1A and the peripheral remaining area 1B. The outermost peripheral portion is divided by a predetermined line 11 and at a predetermined depth position in the wafer 10 to illuminate the laser beam L, and the reforming layer 10c is appropriately formed. Further, since the top surface of the protruding portion 3 is adhered to the outer peripheral remaining region 1B on the surface 10a side of the wafer 10 by the paste layer 32, the expanded external force can be sufficiently transmitted to the outermost periphery when the adhesive sheet 2 is expanded in the dividing step. The predetermined dividing line 11 is divided so that the laminated wafer 1c of the outermost peripheral portion can be divided in the same manner as the other laminated wafer 1c.
又，由於要在積層晶圓1之晶片15側貼附黏著片2以分割晶圓10，對於分割步驟後的積層晶圓1c，則可使其在貼附著黏著片2的狀態下對晶圓10之背面10b繼續進行上述特性檢查。因此，對於必須在晶圓10側貼附了黏著片2的狀態下進行分割的情況，不需要進行黏著片的轉移步驟，而可謀求生產生的提升。 Further, since the adhesive sheet 2 is attached to the wafer 15 side of the laminated wafer 1 to divide the wafer 10, the laminated wafer 1c after the dividing step can be attached to the wafer 2 with the adhesive sheet 2 attached thereto. The back side 10b of 10 continues the above characteristic check. Therefore, in the case where it is necessary to divide the adhesive sheet 2 on the wafer 10 side, it is not necessary to perform the transfer step of the adhesive sheet, and the growth can be improved.
此外，以圖2(b)所示之本實施形態的突起部3的構成為一例，本發明之突起部，只要是具有對應積層晶圓1之外周剩餘區域1B之大小及相當於晶片15程度的厚度，且頂面具有黏著性之構造組成者亦可。例如，亦可做成，在黏著片2的糊層22上配設以UV(紫外線)硬化型樹脂對應外周剩餘區域1B之大小所形成的突起部，使晶圓10貼附至黏著片2後，對突起部照射UV以黏接於晶圓10之外周剩餘區域1B。在這種情況中，形成突起部的UV硬化型樹脂是使用照射UV後仍會殘存黏著性者，因為黏著片2側的黏著層22就算受到UV照射仍要保持對晶片15的黏著性，故非UV硬化型，而以感壓式者較佳。在以UV硬化型樹脂形成突起部之情況中，由於形成連續環狀時，在分割步驟中，會有黏 著片2的擴張受到由UV硬化型樹脂所形成的突起部限制的情形，故宜配設為可擴張的點狀。又，以局部加厚形成黏著片2之糊層22並以和糊層22相同的材料形成環狀突起部3亦可。不論哪種情況都要做成面對黏著片2的頂面具有黏著性者。 Further, the configuration of the protrusion 3 of the present embodiment shown in FIG. 2(b) is an example, and the protrusion of the present invention has a size corresponding to the remaining area 1B of the corresponding laminated wafer 1 and corresponds to the degree of the wafer 15. The thickness of the top surface and the adhesive structure of the top surface may also be used. For example, a protrusion formed by a UV (ultraviolet) curing resin corresponding to the outer peripheral remaining region 1B may be disposed on the paste layer 22 of the adhesive sheet 2, and the wafer 10 may be attached to the adhesive sheet 2 after the wafer 10 is attached thereto. The protrusion is irradiated with UV to adhere to the remaining area 1B of the wafer 10 at the outer periphery. In this case, the UV-curable resin forming the protrusions remains adhered after the UV irradiation, because the adhesive layer 22 on the side of the adhesive sheet 2 is kept adhered to the wafer 15 even if it is subjected to UV irradiation. Non-UV hardening type, and pressure sensitive type is preferred. In the case where the protrusion is formed by the UV-curable resin, since a continuous ring shape is formed, there is a stickiness in the dividing step. Since the expansion of the sheet 2 is restricted by the protrusion formed by the UV-curable resin, it is preferable to form an expandable dot shape. Further, the paste layer 22 of the adhesive sheet 2 may be partially thickened, and the annular projection 3 may be formed of the same material as the paste layer 22. In either case, it is necessary to make the top surface of the adhesive sheet 2 adhesive.
又，上述實施形態之晶圓10為中介層晶圓，雖然以在該晶圓10上堆疊晶片15而構成積層晶圓1，但是，即使晶圓10被視為是在上述區域12中形成有由IC或LSI等的電子回路形成之裝置的裝置晶圓，而為裝置上堆疊有晶片15之構成的積層晶圓等時，也能以本發明的加工方法分割為積層晶片。 Further, the wafer 10 of the above embodiment is an interposer wafer, and the stacked wafer 1 is formed by stacking the wafer 15 on the wafer 10. However, even if the wafer 10 is formed as being formed in the region 12 When a device wafer of a device formed of an electronic circuit such as an IC or an LSI is used as a stacked wafer in which a wafer 15 is stacked on the device, it can be divided into a laminated wafer by the processing method of the present invention.
1‧‧‧積層晶圓 1‧‧‧Laminated wafer
1c‧‧‧積層晶片 1c‧‧‧Layered wafer
10‧‧‧晶圓 10‧‧‧ wafer
15‧‧‧晶片 15‧‧‧chip
2‧‧‧黏著片 2‧‧‧Adhesive tablets
3‧‧‧突起部 3‧‧‧Protruding
4‧‧‧環狀框架 4‧‧‧Ring frame
7‧‧‧擴張裝置 7‧‧‧Expansion device
71‧‧‧圓筒台 71‧‧‧Cylinder table
72‧‧‧升降台 72‧‧‧ Lifting platform
73‧‧‧汽缸裝置 73‧‧‧Cylinder installation
74‧‧‧活塞桿 74‧‧‧ piston rod
75‧‧‧夾鉗機構 75‧‧‧clamp mechanism
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| JP6306362B2 (en) * | 2014-02-13 | 2018-04-04 | リンテック株式会社 | Extensible sheet and laminated chip manufacturing method |
| KR101740487B1 (en) * | 2015-10-20 | 2017-05-29 | 삼성디스플레이 주식회사 | Mask tension welding device for thin film deposition |
| JP6746211B2 (en) * | 2016-09-21 | 2020-08-26 | 株式会社ディスコ | Wafer processing method |
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| JP2004095946A (en) * | 2002-09-02 | 2004-03-25 | Sekisui Chem Co Ltd | Method for manufacturing semiconductor chip |
| JP2004335583A (en) * | 2003-05-01 | 2004-11-25 | Nippon Hoso Kyokai <Nhk> | Wafer dicing method |
| JP2007123362A (en) * | 2005-10-25 | 2007-05-17 | Disco Abrasive Syst Ltd | Method of manufacturing device |
| JP2011228565A (en) * | 2010-04-22 | 2011-11-10 | Disco Abrasive Syst Ltd | Division method of wafer |
| TW201241976A (en) * | 2011-04-13 | 2012-10-16 | Asahi Engineering K K | Method for manufacturing semiconductor device, resin sealing device, and semiconductor device |
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| JP6033116B2 (en) | 2016-11-30 |
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