CN104009001A - Laminated wafer processing method and adhesive piece - Google Patents
Laminated wafer processing method and adhesive piece Download PDFInfo
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- CN104009001A CN104009001A CN201410056892.7A CN201410056892A CN104009001A CN 104009001 A CN104009001 A CN 104009001A CN 201410056892 A CN201410056892 A CN 201410056892A CN 104009001 A CN104009001 A CN 104009001A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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Abstract
The invention provides a laminated wafer processing method and an adhesive piece. In a plurality of chip laminated wafers stacked on wafers, in a state of adhering chip sides on the adhesive piece, wafers can also be reliably cut into a plurality of laminated chips. A paste layer (22) of an adhesive piece (2) correspondingly forms projections (3) on the peripheral residual area (1B) of a paste layer (22) and a laminated wafer (1) is adhered to a chip (15) of the laminated wafer (1); the projections (3) and the peripheral residual area (1B) are correspondingly adhered on the surface (10a) of a wafer (10); the peripheral residual area (1B) of the wafer (10) is supported through the projections (3). In the state, a cutting start point (modified layer 10c) of the wafer (10) is formed along a cutting predetermined line (11), and the wafer (10) is applied with outer force through the expansion of the adhesive piece (2), and accordingly, a laminated chip (1c) on the outmost side can be cut the same as other laminated chips (1c).
Description
Technical field
The present invention relates to set the bonding sheet that the processing method and being adapted at of the stacked wafer of a plurality of chips is used in this processing method on wafer.
Background technology
The chip on wafer) etc. as by a plurality of semiconductor device one of integrated method in 1 encapsulation, by a plurality of semiconductor device chips stacked and CoW(Chip on Wafer of installing on three-dimensional: it is known that three-dimensional is installed.CoW is by cutting apart according to each chip the wafer of the stacked wafer of stacked chip on wafer, formed by chip stacked the stacked die of chip (with reference to patent documentation 1).
On the other hand, for this wafer is cut apart, conventionally make the cutting based on machining (with reference to patent documentation 2) of the bite incision wafer of topping machanism.In addition, in recent years, develop and forming after upgrading layer in wafer inside by laser beam irradiation, wafer is applied external force and take the method (with reference to patent documentation 3) that upgrading layer cuts apart as cutting apart starting point, proposed in the method to expand to apply to sticking on bonding sheet on wafer the technology (with reference to patent documentation 4) of external force.
Patent documentation 1: TOHKEMY 2012-209522 communique
Patent documentation 2: TOHKEMY 2007-214201 communique
Patent documentation 3: No. 3408805 communique of Japan Patent
Patent documentation 4: TOHKEMY 2010-034250 communique
Yet as realizing the three-dimensional wafer of installing, the intermediary layer wafer (Interposer wafer) that packs wiring and electrode etc. in inside into is practical.In the stacked die that the stacked wafer that on such intermediary layer wafer, stacked a plurality of chips obtain is divided into each chip and obtains, sometimes the electrodes such as projection that are formed in intermediary layer wafer are carried out to characteristic check.Therefore,, after being divided into stacked die, need to, using intermediary layer wafer side as upper surface, by bonding sheet supporting chip side, just can carry out this inspection.Therefore, as common enforcement, in wafer side, be that intermediary layer wafer side is paste bonding sheet and carried out cutting apart in the situation that, if after wafer is cut apart, be implemented in chip side and paste bonding sheet and make the bonding sheet of wafer side peel off the transfer printing process of such bonding sheet, can realize the inspection to the intermediary layer wafer of stacked die.Yet this transfer printing process expends time in, can cause productivity ratio to decline.
Therefore, by the chip side at stacked wafer, paste bonding sheet, and under the state that intermediary layer wafer side is exposed, cut apart intermediary layer wafer, can eliminate necessity of the transfer printing of bonding sheet.But, in stacked wafer, due at peripheral part stacked die not, therefore,, in intermediary layer wafer side, between chip area and peripheral part, there is jump, therefore,, in the situation that chip side has been pasted bonding sheet, can produce the peripheral part of intermediary layer wafer to the phenomenon of bonding sheet side deflection.
Like this, when the peripheral part at intermediary layer wafer produces deflection, produce following problem: on intermediary layer wafer, form above-mentionedly cut apart starting point and cut apart in the situation that, due to deflection, cannot be suitably at the boundary member of chip area and peripheral part, form this and cut apart starting point.For example, in the situation that to cut apart starting point be the upgrading layer that laser beam irradiation obtains, focal point departs from and cannot form upgrading layer, in addition, in the situation that cut apart starting point, is the groove that laser processing or cut obtain, and the degree of depth of groove can be not.And, even if formed, cut apart starting point, in the dividing method of the wafer of the expansion based on bonding sheet of recording at above-mentioned patent documentation 4, owing to there being above-mentioned jump, peripheral part at intermediary layer wafer cannot fully be pasted bonding sheet, therefore, and at the boundary member of chip area and peripheral part, the external force that expansion produces is difficult to be delivered to this boundary member, the problem that the stacked die of generation outermost perimembranous cannot be cut apart.
Summary of the invention
The present invention In view of the foregoing completes, its main technical task is, processing method and the bonding sheet of stacked wafer are provided, stacked a plurality of chips on wafer and in the stacked wafer that obtains, chip side is being sticked under the state on bonding sheet, also can reliably wafer be divided into each stacked die.
The processing method of stacked wafer of the present invention, this stacked wafer possesses wafer and chip, this chip respectively this wafer surperficial by intersect a plurality of cut apart on each region that preset lines divides, carry out stacked, this stacked wafer has and is laminated with the chip area of a plurality of these chips and around the periphery remaining area of this chip area, between this chip area and this periphery remaining area, be formed with jump, the processing method of this stacked wafer is characterised in that, comprise: bonding sheet is pasted step, in the described chip side of described stacked wafer, paste bonding sheet; Cut apart starting point and form step, paste after step having implemented this bonding sheet, from the rear side of the wafer of described stacked wafer along forming and cut apart starting point with described region corresponding to preset lines of cutting apart; And segmentation step, cut apart starting point and form after step having implemented this, described stacked wafer is applied to external force, the described starting point of cutting apart of usining is cut apart described wafer as starting point, and described bonding sheet has: substrate layer; Be provided in the paste layer on this substrate layer; And at this, stick with paste the jut forming on layer accordingly with the described periphery remaining area of described stacked wafer, at least the upper surface of this jut has cementability for described wafer, after having implemented described bonding sheet stickup step, by the described chip attach of described stacked wafer on the described paste layer of described bonding sheet, and under the state being supported by described jut at described periphery remaining area, described in described stacked wafer is implemented, cut apart starting point and form step and described segmentation step (technical scheme 1).
In the processing method of stacked wafer of the present invention, by bonding sheet, paste the stacked wafer that step pasted bonding sheet in chip side and become following state: the upper surface of the jut of bonding sheet is with bonding near the periphery remaining area of outer circumferential side than the jump of stacked wafer, and this periphery remaining area is supported by jut.Therefore, suppressed the periphery remaining area of wafer to the deflection of bonding sheet side, consequently, when cutting apart starting point and to apply external force and when wafer is divided into stacked die, can suitably forms and cut apart starting point by forming on wafer.Therefore, the chip side of stacked wafer is being sticked under the state on bonding sheet, also wafer can be divided into each chip, the in the situation that of particularly cutting apart wafer bonding sheet is expanded, the stacked die of outermost perimembranous also can be cut apart.In addition, owing to pasting bonding sheet in the chip side of stacked wafer before cutting apart wafer, therefore, the transfer printing process of needed bonding sheet in the time of need to not cutting apart under wafer side has been pasted the state of bonding sheet.
In described segmentation step of the present invention, comprise the mode (technical scheme 2) that by expanding described bonding sheet, described wafer is applied external force.In which, as mentioned above, the stacked die of the outermost perimembranous of wafer also can similarly be cut apart with other stacked die.
In addition, in the described starting point of cutting apart, form in step, comprise irradiate for described wafer have permeability wavelength laser beam and in the inner mode (technical scheme 3) that forms upgrading layer of this wafer.
Then, bonding sheet of the present invention is the bonding sheet using in the processing method of the stacked wafer of record in technique scheme 1～3, it is characterized in that, this bonding sheet has: substrate layer; Be provided in the paste layer on this substrate layer; And at this, stick with paste the jut forming on layer accordingly with the described periphery remaining area of described stacked wafer, at least the upper surface of this jut has cementability for the described wafer of described stacked wafer.
According to the present invention, obtain providing the processing method of stacked wafer and the effect of bonding sheet, stacked in the stacked wafer of a plurality of chips on wafer, chip side is being sticked under the state on bonding sheet, also wafer can be divided into each stacked die reliably.
Accompanying drawing explanation
(a) of Fig. 1 is the stereogram of the stacked wafer cut apart by the processing method of one embodiment of the present invention, and (b) of Fig. 1 is the side view of this stacked wafer, and Fig. 1 (c) is the local amplification plan view of this stacked wafer.
(a) of Fig. 2 is the stereogram of the bonding sheet of one embodiment of the present invention, and Fig. 2 (b) is the local amplification view of this bonding sheet.
Fig. 3 illustrates the framework pasted on bonding sheet in the processing method of an execution mode and the stereogram of stacked wafer with decomposing state.
Fig. 4 is that the bonding sheet that this processing method is shown is pasted the sectional view of step.
(a) of Fig. 5 is the sectional view that starting point forms step of cutting apart that this processing method is shown, and (b) of Fig. 5 is shown specifically the figure that upgrading layer forms.
Fig. 6 forms step through over-segmentation starting point, has formed the side partial cross-sectional of the stacked wafer of upgrading layer in wafer inside.
Fig. 7 is the sectional view of segmentation step that the processing method of an execution mode is shown.
Label declaration
1: stacked wafer
1A: chip area
1B: periphery remaining area
10: wafer
10a: the surface of wafer
10b: the back side of wafer
10c: upgrading layer (cutting apart starting point)
11: cut apart preset lines
12: region
15: chip
16: jump
2: bonding sheet
21: bonding sheet substrate layer
22: the paste layer of bonding sheet
3: jut
L: laser beam
Embodiment
［ 1 ］ stacked wafer
Fig. 1 illustrates the stacked wafer 1 that is split in one embodiment each stacked die.Stacked wafer 1 has packed the upper stacked a plurality of rectangular-shaped chips 15 of surperficial 10a of the discoideus intermediary layer wafer (being designated hereinafter simply as wafer) 10 of wiring and electrode etc. in inside.Chip 15 is semiconductor device etc., and as shown in Fig. 1 (c), each chip 15 is laminated in by cancellate to be cut apart on each rectangular-shaped region 12 that preset lines 11 divides on the surperficial 10a of wafer 10.Wafer 10 carries out grinding to back side 10b side in advance, and thinning is processed as the thickness of regulation.
Stacked wafer 1 is divided into the chip area 1A of the essentially rectangular shape that is laminated with a plurality of chips 15 and the periphery remaining area 1B of the peripheral part of stacked die 15 not.The thickness of chip 15 is for example 100 about μ m, therefore, and as shown in Fig. 1 (b), at chip area 1A with around the corresponding jump 16 of thickness being formed with between the periphery remaining area 1B of chip area 1A with chip 15.
［ 2 ］ bonding sheet
Fig. 2 is illustrated in the bonding sheet 2 of an execution mode of pasting on above-mentioned stacked wafer 1.As shown in Fig. 2 (b), this bonding sheet 2 is by PO(polyolefin), PVC(polyvinyl chloride), PET(PETG) etc. have and on a face of the substrate layer 21 that the resin sheet of flexibility forms, form the paste layer 22 that the resin by rubber series or acrylic acid series forms and obtain.In paste layer 22 side of this bonding sheet 2, be equipped with the jut 3 of ring-type.
Jut 3 has the size corresponding with the periphery remaining area 1B of wafer 10, as shown in Fig. 2 (b), forms that to have the cross section of certain width rectangular-shaped.The internal diameter of jut 3 is set to and than the external diameter of wafer 10 little scope larger than the chip area 1A of stacked wafer 1, and the external diameter of jut 3 is set to larger than the external diameter of wafer 10.
As shown in Fig. 2 (b), jut 3 is used the structure identical with bonding sheet 2, on the substrate layer 31 forming by the resin there is flexibility by above-mentioned PO, PVC etc., be formed with the band of sticking with paste layer 32 and form jut 3, and jut 3 is adapted to and on the paste layer 22 of bonding sheet 2, pastes substrate layer 31 sides.Therefore the upper surface of jut 3 forms by sticking with paste layer 32, has cementability.The thickness of jut 3 is set as with the height of the above-mentioned jump 16 of stacked wafer 1, is the degree that the thickness of chip 15 is identical.That is, according to the thickness of chip 15, select for forming the thickness of the band of jut 3, in addition, in the situation that the band thinner than chip 15 forms the jut 3 equal with the thickness of chip 15 by stacked a plurality of bringing.
［ 3 ］ processing method
Then the processing method that, the wafer 10 along cutting apart preset lines 11 and cut apart above-mentioned stacked wafer 1 is obtained to an execution mode of a plurality of stacked dies describes.
［ 3-1 ］ bonding sheet is pasted step
First, the jut 3 that the framework 4 of the ring-type of the operation shown in Fig. 3 (Handling) use is provided in to above-mentioned bonding sheet 2 around.Metallic plate that framework 4 has rigidity by stainless steel etc. etc. forms, and inner peripheral forms circle, and internal diameter forms larger than the external diameter of jut 3.By framework 4, be set in the position concentric with jut 3, as shown in Figure 4, stick on the paste layer 22 of bonding sheet 2.
Then, as shown in Figure 4, chip 15 sides of patch laminate wafer 1 on the bonding sheet 2 of tape frame 4.; as shown in Fig. 4 (a); so that chip 15 is relative with the paste layer 22 of the bonding sheet 2 of the inner side of jut 3; and the mode that periphery remaining area 1B is corresponding with jut 3; by the configuration relative to bonding sheet 2 of stacked wafer 1, from this state, as shown in Fig. 4 (b); each chip 15 is sticked on and stuck with paste on layer 22, and the periphery remaining area 1B of the surperficial 10a side of wafer 10 is sticked on the paste layer 32 of jut 3.Thus, in stacked wafer 1, each chip 15 is secured to be stuck with paste on layer 22, and the back side 10b of wafer 10 exposes, and in addition, the periphery remaining area 1B of the surperficial 10a side of wafer 10 is secured on the paste layer 32 of jut 3, becomes the state being supported by this jut 3.Because the thickness of jut 3 is the thickness with the thickness same degree of chip 15, therefore, the periphery remaining area 1B of wafer 10 can be to bonding sheet 2 side deflections, and are positioned in the plane identical with chip area 1A, and wafer 10 integral body are flatly kept.In addition, the step that obtains having pasted the state of stacked wafer 1 on the bonding sheet 2 of tape frame 4 is not limited to above-mentioned steps, for example, after also can stacked wafer 1 being sticked on bonding sheet 2, framework 4 be sticked on bonding sheet 2.
［ 3-2 ］ cut apart starting point and formed step
Then, from the back side 10b side of the wafer 10 of stacked wafer 1, along the region corresponding with cutting apart preset lines 11, form and cut apart starting point.Cut apart starting point and for example can enumerate the groove obtaining by laser processing or cut, still, herein using the upgrading layer obtaining by laser processing as cutting apart starting point, form as follows this upgrading layer.
As shown in Figure 5, on holding unit 5 so that the mode that back side 10b side is exposed keeps stacked wafer 1, by irradiating laser beam L wafer 10 to the wavelength of permeability from Ear Mucosa Treated by He Ne Laser Irradiation unit 6 along cutting apart preset lines 11, in the inside of wafer 10, form upgrading layer 10c.As shown in Fig. 5 (b), the focal point of laser beam L is arranged on to the position of prescribed depth from the 10b of the back side, thus, in the inside of wafer 10, along cutting apart preset lines 11, form upgrading layer 10c.Upgrading layer 10c has the low characteristic of other parts in strength ratio wafer 10, when wafer 10 is applied to external force, becomes and cuts apart starting point, and wafer 10 is divided along cutting apart preset lines 11.
By making holding unit 5 and Ear Mucosa Treated by He Ne Laser Irradiation unit 6 relatively move in the horizontal direction to carry out the scanning along cutting apart the laser beam L of preset lines 11, still, be made as holding unit 5 sides herein and move.In addition, also can be made as Ear Mucosa Treated by He Ne Laser Irradiation unit 6 sides and move, can also be configured to holding unit 5 and Ear Mucosa Treated by He Ne Laser Irradiation unit 6 both sides move.
Holding unit 5 is equipped with in the surrounding of discoideus maintenance platform 51 with the maintenance face 51a of the level that keeps stacked wafer 1 a plurality of fixtures 52 that keep framework 4, therefore, stacked wafer 1 is positioned on maintenance face 51a across bonding sheet 2, by fixture 52, seize framework 4 on both sides by the arms, thus, bonding sheet 2 having been applied to radial outside under the state of tension force, stacked wafer 1 is remained on holding unit 5.
Holding unit 5 can move up in a direction (left and right directions in Fig. 5) with another side of this direction quadrature, and, be supported for and can take center and be rotated as rotating shaft, on the other hand, Ear Mucosa Treated by He Ne Laser Irradiation unit 6 is supported regularly.Then, make holding unit 5 move and process feeding on one side, on one side from Ear Mucosa Treated by He Ne Laser Irradiation unit 6 along cutting apart preset lines 11 illuminating laser beam L, thus, along the preset lines 11 of cutting apart of extending in one direction, in the inside of wafer 10, form upgrading layer 10c, by holding unit 5 is moved up another side, can want the calibration of cutting apart preset lines 11 of illuminating laser beam.In addition, by making holding unit 5 half-twists, can be to the unprocessed preset lines 11 illuminating laser beam L of cutting apart.
［ 3-3 ］ segmentation step
As shown in Figure 6, cutting apart preset lines 11 by the above-mentioned starting point formation step of cutting apart after the interior formation upgrading of wafer 10 layer 10c along whole, from holding unit 5, take out of stacked wafer 1, stacked wafer 1 is moved into the extension fixture 7 shown in Fig. 7.
Extension fixture 7 has the cylinder platform 71 of mounting wafer 10 and the lifting platform 72 of the ring-type that sets in the surrounding of cylinder platform 71.The jut 3 of the external diameter specific adhesion sheet 2 of cylinder platform 71 is large, in the upper end open portion of level, across bonding sheet 2, loads stacked wafer 1.Lifting platform 72 is adapted to and the concentric shape of cylinder platform 71 and liftable, by using the piston rod 74 of the fluid pressure cylinder assembly 73 of air pressure or hydraulic pressure to stretch, carries out lifting.On lifting platform 72, in the devices spaced apart that makes progress in week, be equipped with a plurality of fixtures 75.
In order to implement segmentation step, as shown in Fig. 7 (a), the height and position of lifting platform 72 is made as identical with the upper end open portion of cylinder platform 71, across bonding sheet 2, in the upper end open portion of cylinder platform 71, load stacked wafer 1, and, by fixture 75, seize on both sides by the arms and fixed frame 4, make bonding sheet 2 become the state of level, stacked wafer 1 is arranged on cylinder platform 71.Then, as shown in Fig. 7 (b), the piston rod 74 of each cylinder assembly 73 is synchronously dwindled, lifting platform 72 is declined.
When lifting platform 72 declines, bonding sheet 2 is stretched to radial outside and is expanded, and follows the expansion of bonding sheet 2, wafer 10 is similarly applied to the external force of stretching to radial outside.So it is divided along cutting apart preset lines 11 as starting point that wafer 10 be take upgrading layer 10c, stacked wafer 1 is dividing in each stacked die 1c that is laminated with 1 chip 15 on cut apart wafer 10.
Segmentation step finishes thus, then, for each stacked die 1c that has pasted the state of chip 15 on bonding sheet 2, to what form on the wafer 10 that 10b exposes overleaf, such as electrodes such as projections, implements characteristic check.After this checks, stacked die 1c is picked up and transfers to subsequent processing from bonding sheet 2.
The action effect of ［ 4 ］ execution modes
According to an above-mentioned execution mode, by bonding sheet, paste the stacked wafer 1 that step pasted bonding sheet 2 in chip 15 sides and become following state: the paste layer 32 of the upper surface of the jut 3 of bonding sheet 2 is with bonding near the periphery remaining area 1B of surperficial 10a side outer circumferential side, wafer 10 than the jump 16 of stacked wafer 1, and periphery remaining area 1B is supported by jut 3.Therefore, the periphery remaining area 1B of wafer 10 by with jut 3 butts, suppressed to bonding sheet 2 side deflections.
By implement to cut apart starting point under this state, form step, so that focal point is positioned at the mode of position of the degree of depth of the regulation of wafer 10, to the outermost perimembranous of the boundary member as between chip area 1A and periphery remaining area 1B cut apart also illuminating laser beam L of preset lines 11, suitably form upgrading layer 10c.In addition, because the upper surface of jut 3 is bonding with the periphery remaining area 1B of the surperficial 10a side of wafer 10 by sticking with paste layer 32, therefore, during the expansion of the bonding sheet 2 in segmentation step, what the external force that expansion produces can also be delivered to outermost perimembranous fully cuts apart preset lines 11, and the stacked die 1c of outermost perimembranous also can similarly be cut apart with other stacked die 1c.
In addition, because chip 15 sides at stacked wafer 1 are pasted bonding sheet 2 and wafer 10 is cut apart, therefore,, for the stacked wafer 1c after segmentation step, can continue the back side 10b of wafer 10 to carry out above-mentioned characteristic check maintaining under the state of having pasted bonding sheet 2.Therefore, in the time of need to not cutting apart under wafer 10 sides have been pasted the state of bonding sheet 2, the transfer printing process of needed bonding sheet, realizes the raising of productivity ratio.
In addition, the structure of the jut 3 of the present embodiment shown in Fig. 2 (b) is only an example, it is the size corresponding with the periphery remaining area 1B of stacked wafer 1, the thickness with chip 15 degree that jut of the present invention is configured to, and upper surface has cementability.For example, also can be, to form UV(ultraviolet ray with the size corresponding with periphery remaining area 1B on the paste layer 22 at bonding sheet 2) mode of hardening resin sets jut, after wafer 10 is sticked on bonding sheet 2, jut is irradiated to UV, make the periphery remaining area 1B of itself and wafer 10 bonding.In this situation, the UV hardening resin that forms jut is to use at UV to irradiate the rear also UV hardening resin of residual cementability, the adhesion coating 22 of bonding sheet 2 sides is being in order to be subject to after UV irradiates also keeping the cementability to chip 15, preferably not UV constrictive type but the bonding sheet of pressure sensing type.In the situation that forming jut by UV hardening resin, when forming continuous ring-type, in segmentation step, there is the situation of the jut restriction that the expansion of bonding sheet 2 consisted of UV hardening resin, therefore in order to expand, be adapted to point-like.In addition, also can compared with heavy back, form the paste layer 22 of bonding sheet 2 in part, and with the material identical with sticking with paste layer 22, form the jut 3 of ring-type.In any case, be all made as the upper surface relative with bonding sheet 2 and there is cementability.
In addition, the wafer 10 of above-mentioned execution mode is intermediary layer wafer, stacked die 15 on this wafer 10 and form stacked wafer 1, but, such as wafer 10 being made as to the device wafer of the device that formation consists of electronic circuits such as IC, LSI on above-mentioned zone 12, for the stacked wafer of the structure of stacked chip 15 on device etc., also can be divided into stacked die by processing method of the present invention.
Claims (4)
1. the processing method of a stacked wafer, this stacked wafer possesses wafer and chip, this chip is layered in respectively the surperficial a plurality of preset lines of cutting apart by intersecting of this wafer and divides on each region forming, this stacked wafer has and is laminated with the chip area of a plurality of these chips and around the periphery remaining area of this chip area, between this chip area and this periphery remaining area, be formed with jump
The processing method of this stacked wafer is characterised in that and comprises:
Bonding sheet is pasted step, in the described chip side of described stacked wafer, pastes bonding sheet;
Cut apart starting point and form step, paste after step having implemented this bonding sheet, from the rear side of the wafer of described stacked wafer along forming and cut apart starting point with described region corresponding to preset lines of cutting apart; And
Segmentation step, cuts apart starting point and forms after step having implemented this, and described stacked wafer is applied to external force, and the described starting point of cutting apart of usining is cut apart described wafer as starting point,
Described bonding sheet has:
Substrate layer;
Be provided in the paste layer on this substrate layer; And
Jut, it is upper that the described periphery remaining area of itself and described stacked wafer is formed on this paste layer accordingly,
At least the upper surface of this jut has cementability for described wafer,
After having implemented described bonding sheet stickup step, by the described chip attach of described stacked wafer on the described paste layer of described bonding sheet, and under the state being supported by described jut at described periphery remaining area, described in described stacked wafer is implemented, cut apart starting point and form step and described segmentation step.
2. the processing method of stacked wafer according to claim 1, is characterized in that,
In described segmentation step, by described bonding sheet is expanded, described wafer is applied to external force.
3. the processing method of stacked wafer according to claim 1 and 2, is characterized in that,
In the described starting point of cutting apart, form in step, irradiate the laser beam for described wafer with the wavelength of permeability, at the inner upgrading layer that forms of this wafer.
4. the bonding sheet using in the processing method of the stacked wafer described in claim 1～3, is characterized in that, this bonding sheet has:
Substrate layer;
Be provided in the paste layer on this substrate layer; And
Jut, it is upper that the described periphery remaining area of itself and described stacked wafer is formed on this paste layer accordingly,
At least the upper surface of this jut has cementability for the described wafer of described stacked wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-032821 | 2013-02-22 | ||
| JP2013032821A JP6033116B2 (en) | 2013-02-22 | 2013-02-22 | Laminated wafer processing method and adhesive sheet |
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| Publication Number | Publication Date |
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| CN104009001A true CN104009001A (en) | 2014-08-27 |
| CN104009001B CN104009001B (en) | 2018-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410056892.7A Active CN104009001B (en) | 2013-02-22 | 2014-02-19 | The processing method and bonding sheet of stacked wafers |
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| JP (1) | JP6033116B2 (en) |
| CN (1) | CN104009001B (en) |
| TW (1) | TWI575591B (en) |
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| CN106584867A (en) * | 2015-10-20 | 2017-04-26 | 三星显示有限公司 | Membrane tensile welding equipment for film deposition |
| CN113165121A (en) * | 2019-03-26 | 2021-07-23 | 琳得科株式会社 | Method for manufacturing semiconductor device and laminate |
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| JP6190671B2 (en) * | 2013-09-05 | 2017-08-30 | 古河電気工業株式会社 | Dicing adhesive tape and method for manufacturing semiconductor device |
| JP6306362B2 (en) * | 2014-02-13 | 2018-04-04 | リンテック株式会社 | Extensible sheet and laminated chip manufacturing method |
| JP6746211B2 (en) * | 2016-09-21 | 2020-08-26 | 株式会社ディスコ | Wafer processing method |
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Also Published As
| Publication number | Publication date |
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| TW201436014A (en) | 2014-09-16 |
| JP6033116B2 (en) | 2016-11-30 |
| CN104009001B (en) | 2018-09-11 |
| JP2014165233A (en) | 2014-09-08 |
| TWI575591B (en) | 2017-03-21 |
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