JP2016063016A - Semiconductor manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit generation of an undivided region in the case where an expandable tape is expanded and an adhesive layer is divided in a state where a plurality of semiconductor components are attached to the expandable tape via the adhesive layer.SOLUTION: A semiconductor manufacturing apparatus comprises: an expanded ring pressed to a processed body so as to overlap an expandable tape; a pressure ring which has a hollow part, for pressing a wafer ring in a manner such that at least a plurality of semiconductor components are exposed on the hollow part; and a drive mechanism for lifting up/down at least one of the processed body and the expanded ring so as to make a difference between heights of the wafer ring and the expanded ring to expand the expandable tape. An outer periphery of the expandable ring or an inner periphery of the pressure ring has a shape with a width smaller in a second direction orthogonal to a first direction compared with a width in the first direction.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing method.

  In a semiconductor package manufacturing process, with multiple semiconductor components such as semiconductor chips divided by dicing attached on an expanded tape with an adhesive layer sandwiched between them, the expanded tape is stretched to divide the adhesive layer according to the semiconductor component. How to do is known. By dividing the adhesive layer, for example, a semiconductor component can be picked up together with the divided adhesive layer, and can be directly attached to another substrate or the like.

  When the adhesive layer is divided by stretching the expanded tape, there is a problem that an undivided region is likely to be generated in a part of the adhesive layer. When an undivided region is generated in the adhesive layer, the adhesive layer is easily peeled off from the semiconductor component in a pickup process, for example. In order to suppress the occurrence of undivided regions of the adhesive layer, for example, it is conceivable to increase the stretching force of the expanded tape. However, if the expansion force with respect to the expanded tape is too strong, the semiconductor component is likely to crack or peel off.

JP 2014-082445 A

  The problem to be solved by the invention of the embodiment is that an undivided region is generated when an adhesive layer is divided by stretching the expanded tape in a state where a plurality of semiconductor components are bonded on the expanded tape with the adhesive layer sandwiched therebetween. It is to suppress.

  A semiconductor manufacturing apparatus according to an embodiment includes a wafer ring, an expanded tape whose periphery is fixed by the wafer ring, and a plurality of semiconductor components that are attached to the expanded tape with an adhesive layer sandwiched therebetween and divided from each other. An expanded ring pressed against the expanded tape so as to be superimposed on the expanded tape, a holding ring for holding the wafer ring so as to expose at least a plurality of semiconductor components in the hollow portion, and the wafer ring, And a drive mechanism that raises and lowers at least one of the object to be processed and the expand ring so as to stretch the expand tape with a difference in height from the expand ring. The outer periphery of the expand ring or the inner periphery of the pressing ring has a shape in which the width in the second direction orthogonal to the first direction is smaller than the width in the first direction.

It is a figure for demonstrating the example of the division | segmentation method of an contact bonding layer. It is a figure for demonstrating the example of the division | segmentation method of an contact bonding layer. It is a figure which shows a tension test result. It is a one part enlarged view of the to-be-processed object of the planar direction when an expanded tape is extended. It is a figure for demonstrating the example of calculation of the amount of expansion of the expanded tape at the time of expansion. 5 is a flowchart illustrating an example of a method for manufacturing a semiconductor device. It is a figure which shows the structural example of an expand ring. It is a figure for demonstrating the example of the manufacturing method of a semiconductor device. It is a figure for demonstrating the example of the manufacturing method of a semiconductor device.

  Hereinafter, embodiments will be described with reference to the drawings. The drawings are schematic, and for example, the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like may be different from the actual ones. In the embodiments, substantially the same constituent elements are denoted by the same reference numerals and description thereof is omitted.

  FIG. 1 and FIG. 2 show examples in which an adhesive layer is divided by stretching the expanded tape in a state where a plurality of semiconductor components are bonded on the expanded tape with the adhesive layer sandwiched therebetween using a semiconductor manufacturing apparatus (adhesive layer of the adhesive layer). It is a figure for demonstrating the example of a division | segmentation method. 1 is a plan view, and FIG. 2 is a side view. In FIG. 1 or FIG. 2, some components are omitted for convenience.

  In FIG. 1 and FIG. 2, the workpiece 1, the pressing ring 2, the expanding ring 3, and the driving mechanism 4 are illustrated. The target object 1 includes a wafer ring 11, an expanded tape 12, an adhesive layer 13, and a target substrate 14. The semiconductor manufacturing apparatus of the embodiment only needs to include at least the pressing ring 2, the expanding ring 3, and the driving mechanism 4, and the object 1 is transported from the outside when the semiconductor manufacturing apparatus is used, for example.

  The wafer ring 11 includes a hollow portion. The wafer ring 11 has a function of fixing the expanded tape 12. The hollow portion of the wafer ring 11 has, for example, a circular planar shape.

  The peripheral edge of the expanding tape 12 is fixed by the wafer ring 11. The expanded tape 12 includes, for example, a first adhesive region for mounting the substrate to be processed 14 and a second adhesive region provided on the outer periphery of the first adhesive region and attached to the wafer ring 11. At this time, it is fixed so that the first adhesive region is exposed in the hollow portion of the wafer ring 11.

  The planar shape of the expanded tape 12 is not particularly limited, but is preferably, for example, a circular shape. As the expanded tape 12, for example, a laminated film having a base material mainly composed of vinyl chloride, polyolefin and the like, and an adhesive layer provided on the base material and mainly composed of an ultraviolet curable resin such as an epoxy resin is used. Can be used.

  Since the expand tape 12 is formed by molding a resin into a sheet shape, it has a resin flow direction (Machine Direction: MD) and a vertical direction (Transverse Direction: TD) perpendicular to the resin flow direction. For example, when an expanded tape is formed in a sheet shape and a part of the sheet is cut out and used as the expanded tape 12, the long axis direction of the expanded tape 12 is the resin flow direction (MD). The term “vertical” may include a state within ± 10 degrees from the vertical direction (substantially vertical).

  The adhesive layer 13 is provided on the expanded tape 12. The adhesive layer 13 has a function of adhering the expanded tape 12 and the substrate to be processed 14. In the adhesive layer 13, the adhesive strength with respect to the substrate 14 is preferably higher than the adhesive strength with respect to the expanded tape 12. As the adhesive layer 13, for example, a die attach film (DAF) or the like can be used. As the DAF, for example, an adhesive sheet mainly composed of an epoxy resin, a polyimide resin, an acrylic resin, or the like can be used. In FIG. 1, the adhesive layer 13 has a circular planar shape, but an adhesive layer 13 having a different planar shape according to the planar shape of the substrate to be processed 14 may be used.

  The substrate 14 to be processed is attached to the expanded tape 12 with the adhesive layer 13 in between. The substrate to be processed 14 has a plurality of divided semiconductor components 14a. In FIG. 1, the substrate 14 to be processed has a circular planar shape, but is not limited thereto, and may have a rectangular planar shape, for example.

  Examples of the substrate 14 to be processed include a semiconductor substrate on which a semiconductor element is formed, a package substrate having a wiring substrate and a plurality of semiconductor chips stacked on the wiring substrate. For example, a semiconductor chip can be formed as the semiconductor component 14a by dividing the semiconductor substrate. Further, by dividing the package substrate, a package component (semiconductor package) can be formed as the semiconductor component 14a.

  Examples of the package component include a semiconductor package having a TSV (Through Silicon Via) type stacked structure in which a plurality of semiconductor chips are stacked. A semiconductor package having a stacked structure by the TSV method includes, for example, a substrate such as a lead frame and a plurality of semiconductor chips stacked on the substrate. The plurality of semiconductor chips are electrically connected to each other by bumps provided on the semiconductor chip and through electrodes penetrating the semiconductor chip. As described above, by using a semiconductor package having a TSV stacked structure, a chip area can be reduced and the number of connection terminals can be increased, so that connection failure and the like can be suppressed.

  The pressing ring 2 has a hollow portion. The pressing ring 2 has a function of pressing the wafer ring 11 so that at least the plurality of semiconductor components 14a are exposed in the hollow portion when the expanded tape 12 is stretched.

  The expand ring 3 is pressed against the workpiece 1 so as to overlap the expand tape 12 when the expand tape 12 is stretched. In FIG. 1, the expand ring 3 has an annular structure having a hollow portion, but is not limited thereto, and the hollow portion may not necessarily be provided.

  In FIG. 1, the outer periphery of the expand ring 3 has a shape in which the width in the second direction perpendicular to the first direction is smaller than the width in the first direction, for example, an elliptical shape in which the first direction has a major axis and the second direction has a minor axis. Have At this time, the inner circumference of the pressing ring 2 has, for example, a circular shape, and the long diameter of the expanding ring 3 is preferably shorter than the inner diameter of the wafer ring 11 and the inner diameter of the pressing ring 2. Moreover, it is preferable that the short diameter of the expand ring 3 is larger than the diameter of the substrate 14 to be processed. Thereby, the amount of expansion of the expanded tape 12 can be made different between the resin flow direction (MD) and the vertical direction (TD) of the expanded tape 12.

  In addition, instead of the expand ring 3, the inner periphery of the pressing ring 2 has a shape in which the width in the second direction perpendicular to the first direction is smaller than the width in the first direction, for example, the first direction has the major axis and the second direction It may have an elliptical shape with a minor axis. At this time, it is preferable that the outer periphery of the expand ring 3 has a circular shape, and the diameter of the expand ring 3 is smaller than the short diameter of the inner periphery of the pressing ring 2 and larger than the diameter of the substrate 14 to be processed.

  The drive mechanism 4 has a function of raising and lowering at least one of the workpiece 1 and the expand ring 3 so as to cause the height difference between the wafer ring 11 and the expand ring 3 to stretch the expand tape 12. The drive mechanism 4 includes, for example, a drive unit that moves up and down at least one of the workpiece 1 and the expand ring 3, and a control unit that controls the drive unit. The control unit includes, for example, a CPU (Central Processing Unit), a memory, a logic circuit, and the like. In FIG. 2, the drive mechanism 4 is connected to the expanding ring 3, but is not limited thereto, and may be connected to the pressing ring 2.

  In the example of the adhesive layer dividing method, when the expanded tape 12 is stretched, the distance (D1) between the inner periphery of the pressing ring 2 and the outer periphery of the expanded ring 3 in the vertical direction (TD) of the expanded tape 12 is the resin flow direction ( MD) is narrower than the distance (D2) between the inner periphery of the pressing ring 2 and the outer periphery of the expanding ring 3 (D1 <D2).

  In many cases, the expanded tape has anisotropy in which the elongation in the resin flow direction (MD) and the elongation in the vertical direction (TD) are different. The anisotropy is considered to be caused by, for example, applying pressure while pulling out the sheet-like expanded tape wound in a roll shape in the drawing direction or material characteristics in the manufacturing process of the expanded tape.

  FIG. 3 is a diagram illustrating an example of a tensile test result using an expanded tape. In each of FIGS. 3A to 3C, the tensile test result (solid line) of the sample pulled in the resin flow direction (MD) and the tensile test result (dotted line) of the sample pulled in the vertical direction (TD) are shown. Yes.

As shown in FIGS. 3A to 3C, the tensile strength of the sample pulled in the resin flow direction (MD) with respect to the sample pulled in the vertical direction (TD) when the tape elongation is 100%. The ratio (σ _MD / σ _TD ) is 1.1, 1.6, and 1.9, respectively. In any result, the tensile strength of the sample pulled in the resin flow direction (MD) is higher than the tensile strength of the sample pulled in the vertical direction (TD). From this, it can be seen that the expanded tape has the property of yielding more easily in the vertical direction (TD) than in the resin flow direction (MD).

  When the expanded tape having the property of yielding more easily in the vertical direction (TD) than the resin flow direction (MD) is used as the expanded tape 12 shown in FIGS. 1 and 2, for example, the inner periphery of the pressing ring 2 and the expanded ring 3 When the distance from the outer periphery of the film is D1 = D2, the easiness of extension of the adhesive layer 13 when the expanded tape 12 is stretched also differs between the resin flow direction (MD) and the vertical direction (TD).

  FIG. 4 is an enlarged view of a part of the object to be processed in the planar direction when the expanded tape is stretched. When D1 = D2, the expanded tape 12 is easily stretched in the resin flow direction (MD), so that the adhesive layer 13 between the plurality of semiconductor components 14a is sufficiently spread as shown in FIG. On the other hand, in the vertical direction (TD), since the expanded tape 12 is difficult to stretch, the adhesive layer 13 between the plurality of semiconductor components 14a is difficult to spread. Therefore, an undivided region of the adhesive layer 13 is likely to occur in the vertical direction (TD).

  On the other hand, when D1 <D2, the amount of expansion of the expanded tape 12 can be increased in the vertical direction (TD). Therefore, as shown in FIG. 4B, in the vertical direction (TD), the spread of the adhesive layer 13 between the plurality of semiconductor components 14a is increased, and the adhesive layer 13 can be easily divided.

Considering the tensile test results shown in FIG. 3, the ratio of the tensile strength (σ _MD / σ _TD ) between the vertical direction (TD) and the resin flow direction (MD) is larger than 1.0 and larger than 2.0. It is a small range. Therefore, in order to reduce the difference between the spread of the adhesive layer 13 between the plurality of semiconductor components 14a in the vertical direction (TD) and the spread of the adhesive layer 13 between the plurality of semiconductor components 14a in the resin flow direction, It is preferable to increase the stretching amount of the expanded tape 12 of (TD).

The amount of expansion of the expanded tape during stretching can be determined from the difference between the length of the expanded tape 12 before stretching and the length of the expanded tape 12 during stretching. For example, the length of the expanded tape 12 between the inner circumference of the holding ring 2 during stretching and the outer circumference of the expanding ring 3 is L _after, and the inner circumference of the holding ring 2 and the outer circumference of the expanding ring 3 before stretching. When the length of the expanding tape 12 between the two is L _before and the height difference between the pressing ring 2 and the expanding ring 3 that determines the expanding force of the expanding tape 12 is Ex'd, based on the three-square theorem , L _after = (L _before ² + Ex′d ² ) ^0.5 holds. Therefore, the amount of expansion of the expanded tape 12 at the time of stretching can be determined by determining the value of L _after −L _before .

At this time, the ratio L _rate of the stretching amount in the vertical direction (TD) to the stretching amount in the resin flow direction (MD) of the expanding tape 12 when the expanding tape 12 represented by the following formula (1) is stretched is, for example, 1 It is preferably larger than 0.0 and smaller than 2.0, more preferably 1.1 or more and 1.9 or less.

（式（１）中、Ｌ_{ｂｅｆｏｒｅ＿ＭＤ}は引き伸ばし前の樹脂流れ方向（ＭＤ）における押さえ用リング２の内周とエキスパンドリング３の外周との間のエキスパンドテープ１２の長さ、Ｌ_{ｂｅｆｏｒｅ＿ＴＤ}は引き伸ばし前の垂直方向（ＴＤ）における押さえ用リング２の内周とエキスパンドリング３の外周との間のエキスパンドテープ１２の長さ、Ｅｘ’ｄは、押さえ用リング２とエキスパンドリング３との高低差をそれぞれ表す。）

(In formula (1), _{Lbefore_MD} is the length of the expanded tape 12 between the inner periphery of the retaining ring 2 and the outer periphery of the expand ring 3 in the resin flow direction (MD) before stretching, and _{Lbefore_TD} is before stretching. The length of the expanded tape 12 between the inner periphery of the pressing ring 2 and the outer periphery of the expanding ring 3 in the vertical direction (TD), Ex′d, represents the height difference between the pressing ring 2 and the expanding ring 3. .)

  FIG. 5 is a diagram for explaining a calculation example of the expansion amount of the expanded tape. For example, the diameter of the substrate 14 before stretching is 300 mm, the short diameter of the expanding ring 3 is 330 mm, the long diameter of the expanding ring 3 is 332 mm, the inner diameter of the wafer ring 11 is 350 mm, and the inner diameter of the holding ring 2 is The diameter is 340 mm, the height difference (Ex′d) between the pressing ring 2 and the expanding ring 3 is 10 mm, and the diameter of the substrate 14 after stretching in the resin flow direction (MD) is 312.4 mm due to the spread of the adhesive layer 13. The diameter of the substrate 14 to be processed after stretching in the vertical direction (TD) is set to 314.2 mm due to the spread of the adhesive layer 13.

At this time, L _{after_MD−} L _{before_MD} in the resin flow direction (MD) is (11.2 mm−5 mm) = 6.2 mm as shown in FIG. 5A, and both ends are 12.4 mm. On the other hand, L _{after_TD−} L _{before_TD} in the vertical direction (TD) is (10.8 mm−4 mm) = 6.8 mm as shown in FIG. 5B, and both ends are 13.6 mm. At this time, L _rate is 6.8 / 6.2≈1.1. Thus, by increasing the major axis of the expanding ring 3 by about 0.6% with respect to the minor axis of the expanding ring 3, the amount of expansion of the expanding tape 12 in the vertical direction (TD) can be increased by about 10%. .

  As described above, in the semiconductor manufacturing apparatus according to the present embodiment, the distance between the inner periphery of the pressing ring and the outer periphery of the expand ring in the vertical direction (TD) of the expand tape when the expand tape is stretched is the resin flow direction (MD). By making it narrower than the distance between the inner periphery of the pressing ring and the outer periphery of the expand ring, the amount of expansion of the expanded tape in the vertical direction (TD) can be increased. Therefore, generation | occurrence | production of the undivided area | region of an contact bonding layer can be suppressed.

  Further, by reducing the difference between the spread amount of the adhesive layer in the vertical direction (TD) and the spread amount of the adhesive layer in the resin flow direction (MD), the adhesive layer can be more evenly spread. It is possible to suppress cracking or peeling of the semiconductor component due to the spread of the adhesive layer.

  Next, an example of a method for manufacturing a semiconductor device will be described with reference to FIG. FIG. 6 is a flowchart for explaining an example of a method for manufacturing a semiconductor device. In the example of the method for manufacturing the semiconductor device shown in FIG. 6, a process S1 (processed substrate division) for dividing the substrate to be processed and a process S2 for arranging a target object including the substrate to be processed attached on the expanded tape ( (Processing Object Arrangement), Step S3 for Stretching Expanding Tape (Tape Stretching), Step S4 for Performing Image Recognition of Semiconductor Components (Image Recognition), and Step S5 for Picking Up Semiconductor Components (Pickup) . In addition, the process content and process order of the example of the manufacturing method of a semiconductor device are not necessarily limited to the said process.

  In step S1 (divided substrate to be processed), the substrate 14 to be processed is divided according to the semiconductor component 14a by cutting the substrate 14 according to the semiconductor component 14a by dicing using, for example, a diamond blade or laser light. be able to. When the substrate 14 to be processed is a semiconductor substrate, a cut is formed in the substrate 14 to be processed by dicing, and a protective tape mainly composed of vinyl chloride, polyolefin, or the like is applied so as to cover the cut, and the opposite surface of the protective tape is applied. The substrate 14 to be processed may be divided by grinding a part of the substrate 14 to be processed from the exposed surface of the substrate 14 to be processed.

  Even if the substrate 14 to be processed is attached to the expanded tape 12 whose periphery is fixed by the wafer ring 11 with the adhesive layer 13 interposed therebetween, the substrate 14 to be processed is cut according to the semiconductor component 14a by dicing. Good. At this time, the to-be-processed substrate 14 may be affixed on the expanded tape 12 using a conveyance arm etc. Further, an expanded tape on which an adhesive layer 13 is formed in advance is used as the expanded tape 12, and the substrate to be processed 14 is pasted on the adhesive layer 13, subjected to heat treatment, and then cooled to adhere the substrate 14 to be processed. Also good.

  In step S <b> 1 (substrate to be processed), at least a part of the adhesive layer 13 may be cut. At this time, the expanded tape 12 is not cut. Furthermore, the expanding tape 12 may be stretched so as not to bend by adjusting the height of the wafer ring 11 before dicing, for example.

  In step S <b> 2 (processing object arrangement), the processing object 1 is arranged so that the expanded tape 12 overlaps the expanding ring 3. For example, when the outer periphery of the expanding ring 3 or the inner periphery of the pressing ring 2 has an elliptical shape, the minor axis of the circumference is located in the resin flow direction (MD) of the expanding tape 12 and the major axis is the vertical direction of the expanding tape 12 ( The expanding ring 3 is arranged so as to be located at (TD). Thus, the distance (D1) between the inner periphery of the pressing ring 2 and the outer periphery of the expanding ring 3 in the vertical direction (TD) of the expanding tape 12 is set to the inner periphery of the pressing ring 2 and the expanded in the resin flow direction (MD). The distance from the outer periphery of the ring 3 (D2) can be made narrower.

  Further, the wafer ring 11 is pressed by the pressing ring 2 so that the plurality of semiconductor components 14a are exposed in the hollow portion. For example, the wafer ring 11 can be fixed by pressing the wafer ring 11 from above with the pressing ring 2.

  In step S3 (tape stretching), the expanding tape 12 is stretched by providing a height difference between the wafer ring 11 and the expanding ring 3. For example, the expansion ring 3 is moved up and down by the drive mechanism 4. Thereby, the expanded tape 12 is pulled radially and the expanded tape 12 can be stretched. The stretching force of the expanding tape 12 is appropriately set depending on the height difference between the wafer ring 11 and the expanding ring 3. The pressing ring 2 may be moved up and down by the drive mechanism 4.

  When the expanded tape 12 is stretched, a region between the plurality of semiconductor components 14a of the adhesive layer 13 is expanded, and the adhesive layer 13 is divided according to the semiconductor components 14a. In this embodiment, by setting D1 <D2, the expand tape 12 is stretched so that the stretch amount of the expand tape 12 in the vertical direction (TD) is larger than the stretch amount of the expand tape in the resin flow direction (MD). Thereby, generation | occurrence | production of the undivided area | region in the contact bonding layer 13 can be suppressed. Further, by reducing the difference between the spread amount of the adhesive layer 13 in the vertical direction (TD) and the spread amount of the adhesive layer 13 in the resin flow direction (MD), it is possible to suppress cracking or peeling of the semiconductor component. it can.

  In addition, in the process S1 (dicing), when the substrate 14 to be processed is diced on the expanded tape 12, the adhesive layer 13 is flexible, so that at least part of the uncut region of the adhesive layer 13 is generated or after cutting. The regions that have been cut by the application of heat may re-adhere. Even in the above case, the adhesive layer 13 can be divided in accordance with the semiconductor component 14a in the step S3 (tape stretching).

  Note that an expanding ring having a rotation axis may be used as the expanding ring 3. 7A and 7B are diagrams showing an example of the structure of an expanding ring having a rotation axis, where FIG. 7A is a plan view and FIG. 7B is a side view. The expanding ring 3 shown in FIG. 7 includes a stage 31, a rotating shaft 32, and a plurality of rollers 33.

  The outer periphery of the stage 31 has an elliptical shape, for example. The entire stage 31 may be pressed against the expanded tape 12 when the expanded tape 12 is stretched.

  The rotating shaft 32 is provided along the height direction of the expanding ring 3 (the thickness direction of the expanding tape 12). Therefore, the outer periphery of the expanding ring 3 can be regarded as an ellipse. The rotation shaft 32 has a function of rotating the stage 31 along the plane of the expanded tape 12. The rotation angle of the rotation shaft 32 is controlled by, for example, the drive mechanism 4.

  The plurality of rollers 33 are provided along the circumference of the stage 31. At this time, the formation region of the plurality of rollers 33 may be regarded as a ring portion of the expanding ring 3. The roller 33 has a rotation axis along a tangent line around the stage 31. As the roller 33, for example, a bearing roller can be used. By rotating each of the rollers 33 and expanding the expanded tape 12 radially, the force is easily transmitted to the expanded tape 12, and the coefficient of friction between the expanded tape 12 and the expanded ring 3 is reduced. Can be stretched. Note that the roller 33 is not necessarily provided.

  Step S2 (arrangement of objects to be processed) and step S3 (tape stretching) in the case of using the expand ring 3 shown in FIG. 7 will be described with reference to FIGS. 8 and 9 are diagrams for explaining an example of a method of manufacturing a semiconductor device.

  In step S2 (arrangement of objects to be processed), as described above, the object to be processed 1 is arranged so that the expanded tape 12 overlaps the expand ring 3, and a plurality of semiconductor components 14a are exposed in the hollow portion of the pressing ring 2. In this manner, the wafer ring 11 is pressed by the pressing ring 2.

  In the step prior to step S2 (arrangement of objects to be processed), the resin flow direction (MD) of the expanded tape 12 may not match the major axis direction of the expand ring 3. In this case, as shown in FIG. 8, the expand ring 3 can be arranged so that the major axis is positioned in the resin flow direction (MD) of the expand tape 12 by rotating the stage 31 with the rotation shaft 32. For example, an alignment mark is formed on a part of the substrate 14 to be processed, and the rotation angle of the rotary shaft 32 can be controlled by the drive mechanism 4 based on the direction data based on the alignment mark. Since the other description is the same as the above description, the description is omitted here.

  In step S3 (tape stretching), as shown in FIG. 9, the expanding tape 12 is stretched by providing a height difference between the wafer ring 11 and the expanding ring. The other enlargement methods are the same as those described above, and are not described here.

  In this way, when the outer periphery of the expanding ring has an elliptical outer periphery, by using the expanding ring having a rotation axis along the height direction, the resin flow direction (MD) of the expanding tape and the major axis of the expanding ring Even when the directions do not match, the expanding ring can be arranged so that the major axis is positioned in the resin flow direction (MD) of the expanding tape.

  In step S4 (image recognition), the semiconductor component 14a is image-recognized by capturing an image of the semiconductor component 14a attached on the expanded tape 12. For example, image recognition can be performed by imaging the semiconductor component 14a with an image sensor such as an optical sensor such as a CCD sensor or a CMOS sensor or an infrared sensor, and detecting reflected light from the semiconductor component 14a with the image sensor. it can.

  In step S5 (pickup), the semiconductor component 14a that has undergone image recognition together with the divided adhesive layer 13 is picked up. For example, the semiconductor component 14a is picked up based on position information and angle information of the semiconductor component 14a obtained by image recognition. Thereby, it is possible to accurately pick up the predetermined semiconductor component 14a. The pickup can be performed using, for example, a collet.

  You may press the surface on the opposite side to the sticking surface of the semiconductor component 14a of the expand tape 12 using a pressing device in the case of pick-up. Thereby, since the gap between the semiconductor components 14a can be widened, the pickup of the semiconductor components 14a is facilitated. In addition, by performing an operation test or the like, the semiconductor components 14a may be ranked from the viewpoint of operating frequency, temperature characteristics, etc., and the semiconductor components may be picked up multiple times for each rank.

  The picked-up semiconductor component 14a is manufactured as a single semiconductor package through a marking process, for example. Further, after mounting the package as a single semiconductor chip on another wiring substrate, the above steps S1 to S5 are performed again, and a SIP (System in Package) type semiconductor in which a plurality of semiconductor chips having different functions are stacked. A package may be formed.

  As described above, in the example of the method for manufacturing a semiconductor device according to the present embodiment, when the expanded tape is stretched, the amount of expansion of the expanded tape in the vertical direction (TD) is increased, so that the adhesive layer in the vertical direction (TD) is not formed. Generation of divided areas can be suppressed. Further, by reducing the difference between the spread amount of the adhesive layer in the vertical direction (TD) and the spread amount of the adhesive layer in the resin flow direction (MD), it is possible to suppress the cracking or peeling of the semiconductor component.

  The above embodiment is presented as an example, and is not intended to limit the scope of the invention. The above-described novel embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1 ... To-be-processed object, 11 ... Wafer ring, 12 ... Expanding tape, 13 ... Adhesive layer, 14 ... Substrate to be processed, 14a ... Semiconductor component, 14a ... Substrate to be processed, 2 ... Ring for pressing, 3 ... Expand ring, 31 ... Stage, 32 ... Rotating shaft, 33 ... Roller, 4 ... Drive mechanism.

Claims (5)

A workpiece including a wafer ring, an expanded tape having a peripheral edge fixed by the wafer ring, and a plurality of semiconductor components that are attached to the expanded tape with an adhesive layer interposed therebetween and divided from each other. An expanding ring pressed against the expanding tape,
A holding ring for holding the wafer ring so that at least the plurality of semiconductor components are exposed in the hollow portion,
A drive mechanism that raises and lowers at least one of the object to be processed and the expand ring so as to stretch the expand tape by causing a height difference between the wafer ring and the expand ring,
The outer periphery of the expanding ring or the inner periphery of the pressing ring has a shape in which the width in the second direction perpendicular to the first direction is smaller than the width in the first direction. The semiconductor manufacturing apparatus according to claim 1,
When the expand tape is stretched, the distance between the inner periphery of the pressing ring and the outer periphery of the expand ring in the vertical direction (TD) perpendicular to the resin flow direction (MD) of the expand tape is determined in the resin flow direction. A semiconductor manufacturing apparatus narrower than the interval. The semiconductor manufacturing apparatus according to claim 1 or 2,
The ratio Lrate of the amount of stretching in the vertical direction to the amount of stretching in the resin flow direction of the expanding tape when the expanding tape represented by the following formula (1) is stretched is greater than 1.0 and greater than 2.0. Small semiconductor manufacturing equipment.

(In formula (1), L _{before_MD} is the length of the expanding tape between the inner periphery of the pressing ring and the outer periphery of the expanding ring in the resin flow direction before stretching, and L _{before_TD} is the vertical before stretching. The length of the expanded tape between the inner periphery of the pressing ring and the outer periphery of the expanding ring in the direction, Ex′d, represents the difference in height between the pressing ring and the expanding ring when stretched. ) In the semiconductor manufacturing apparatus according to any one of claims 1 to 3,
When the outer periphery of the expand ring has the shape, the expand ring has a rotation axis along the height direction. An expanded tape comprising: a wafer ring; an expanded tape having a peripheral edge fixed by the wafer ring; and the plurality of semiconductor components that are bonded and separated on the expanded tape with an adhesive layer interposed therebetween. Is placed so as to overlap the expansion ring,
Pressing the wafer ring so that the plurality of semiconductor components are exposed in the hollow portion by a pressing ring having a hollow portion,
A method of manufacturing a semiconductor device in which the adhesive tape is divided according to the semiconductor component by stretching the expanding tape by providing a height difference between the wafer ring and the expanding ring,
A method for manufacturing a semiconductor device, wherein the expanding tape is stretched so that a stretching amount in a vertical direction (TD) perpendicular to the resin flow direction (MD) of the expanding tape is larger than a stretching amount in the resin flow direction.

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