TWI571976B - 用於積體電路總成之模製合成外殼 - Google Patents
用於積體電路總成之模製合成外殼 Download PDFInfo
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- TWI571976B TWI571976B TW104111614A TW104111614A TWI571976B TW I571976 B TWI571976 B TW I571976B TW 104111614 A TW104111614 A TW 104111614A TW 104111614 A TW104111614 A TW 104111614A TW I571976 B TWI571976 B TW I571976B
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Classifications
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Description
本揭示案之實施例大體而言係關於積體電路之領域,且更具體而言係關於用於積體電路(IC)總成之模製合成外殼。
當前,用於諸如例如固態驅動機(SSD)的電子總成之外殼可包括鑄造金屬結構。然而,鑄造金屬結構可為製造昂貴的,可具有相對較高質量或較低剛性,可需要整飾精整,且/或可不允許諸如無螺桿設計的緊固特徵之整合。
依據本發明之一實施例,係特地提出一種用於一積體電路(IC)總成之外殼,該外殼包含:一模製上蓋結構,其具有一主體部分,及一側面部分,該側面部分自該主體部分延伸且形成一空腔,該空腔經組配以容納該IC總成,其中該主體部分及該側面部分共用包含一聚合物的一相連內部材料且共用包含一金屬的一相連外部材料,該相連內
部材料具有形成於該主體部分中的一開口,使得該IC總成可經由該開口與該相連外部材料熱耦接。
T‧‧‧厚度
S1‧‧‧主動側
S2‧‧‧非活性側
100‧‧‧積體電路(IC)總成
102‧‧‧晶粒
102a‧‧‧半導體基板
102b‧‧‧裝置層
102c‧‧‧互連層
104‧‧‧被動裝置
106‧‧‧晶粒級互連結構
108‧‧‧底部填充材料
121‧‧‧封裝基板
130‧‧‧開口
130a、130b‧‧‧開口
133‧‧‧空腔
150‧‧‧外殼
152‧‧‧上蓋部分
152a‧‧‧內部部分
152b‧‧‧外部部分
152c‧‧‧主體部分
152d‧‧‧側面部分
152e‧‧‧底漆材料
154‧‧‧基底部分
156‧‧‧緊固機構
200、300‧‧‧模製上蓋結構
400‧‧‧部分
500a~500d‧‧‧階段
590‧‧‧模具
600a~600c‧‧‧階段
700‧‧‧方法
702~708‧‧‧步驟
800‧‧‧計算裝置
802‧‧‧母板
804‧‧‧處理器
806‧‧‧通訊晶片
808‧‧‧殼體
藉由結合隨附圖式的以下詳細描述將容易理解實施例。為促進此描述,相同元件符號指定相同結構元件。實施例以實例之方式且並非以限制之方式例示於隨附圖式之諸圖中。
圖1示意性地例示根據一些實施例之用於積體電路(IC)總成之示例性外殼的橫截面側視圖。
圖2示意性地例示根據一些實施例之模製上蓋結構的透視圖。
圖3示意性地例示根據一些實施例之模製上蓋結構的透視圖,該模製上蓋結構具有形成於內部部分中的多個開口。
圖4示意性地例示根據一些實施例之模製上蓋結構之一部分的橫截面透視圖。
圖5示意性地例示根據一些實施例之在根據第一技術之製造之各種階段期間的上蓋結構。
圖6示意性地例示根據一些實施例之在根據第二技術之建造之各種階段期間的上蓋結構。
圖7示意性地例示根據一些實施例之製造用於IC總成之外殼之方法的流程圖。
圖8示意性地例示根據一些實施例之計算裝置,該計算裝置包括如本文所描述之用於IC總成之外殼。
本揭示案之實施例描述用於積體電路(IC)總成之模製合成外殼。在以下描述中,將使用熟習此項技術者通常用來將其工作之實質傳達給其他熟習此項技術者的術語來描述例示性實行方案之各種態樣。然而,熟習此項技術者將顯而易見,本揭示案之實施例可在僅具有所描述態樣中之一些的情況下實踐。出於解釋之目的,闡述特定數目、材料及組態以便提供對例示性實行方案之徹底理解。然而,熟習此項技術者將顯而易見,本揭示案之實施例可在無特定細節的情況下實踐。在其他情況下,省略或簡化熟知特徵以便不模糊例示性實行方案。
在以下詳細描述中,參考形成詳細描述之一部分的隨附圖式,在隨附圖式中相同數字始終指定相同部分,且在隨附圖式中以說明實施例之方式展示,本揭示案之標的可實踐於該等說明實施例中。將理解,可利用其他實施例,且可在不脫離本揭示案之範疇的情況下做出結構或邏輯變化。因此,將不以限制性意義考慮以下詳細描述,且實施例之範疇由隨附申請專利範圍及其等效物定義。
出於本揭示案之目的,片語「A及/或B」意味(A)、(B)或(A及B)。出於本揭示案之目的,片語「A、B及/或C」意味(A)、(B)、(C)、(A及B)、(A及C)、(B及C)或(A、B及C)。
描述可使用基於透視的描述,諸如頂部/底部、
內/外、在......上方/在......下方等。此類描述僅用來促進論述且不意欲將本文所描述之實施例之應用限制於任何特定定向。
描述可使用片語「在一實施例中」或「在實施例中」,該等片語各自涉及相同或不同實施例中一或多者。此外,如關於本揭示案之實施例所使用的「包含」、「包括」、「具有」等詞為同義的。
「與......耦接」一詞連同其派生詞可用於本文中。「耦接」可意味以下中之一或多者。「耦接」可意味二或更多個元件處於直接實體、熱或電氣接觸中。然而,「耦接」可亦意味二或更多個元件彼此間接接觸,但仍彼此合作或相互作用,且可意味一或多個其他元件耦接或連接在據稱為彼此耦接的元件之間。
在各種實施例中,片語「形成、沉積或以其他方式安置於第二特徵上的第一特徵」可意味第一特徵係形成、沉積或安置在第二特徵之上,且第一特徵之至少一部分可處於與第二特徵之至少一部分直接接觸(例如,直接實體及/或電氣接觸)或間接接觸(例如,具有介於第一特徵與第二特徵之間的一或多個其他特徵)中。
如本文所使用,「模組」一詞可涉及以下各者,為以下各者之部分或包括以下各者:特定應用積體電路(ASIC)、電子電路、系統單晶片(SoC)、處理器(共用、專用或群組),及/或執行一或多個軟體或韌體程式的記憶體(共用、專用或群組)、組合邏輯電路及/或提供所述功能的其他
適合的組件。
圖1示意性地例示根據一些實施例之用於積體電路(IC)總成100之示例性外殼150的橫截面側視圖。根據各種實施例,外殼150包括上蓋部分152及基底部分154。上蓋部分152及基底部分154可耦接在一起以容納IC總成100。外殼150及IC總成100之組件可並未按比例描繪。
根據各種實施例,上蓋部分152(例如,上蓋結構)可包括模製複合結構。例如,在一些實施例中,上蓋部分152可包括由聚合物組成的內部部分152a及由金屬組成的外部部分152b。內部部分152a及外部部分152b可經成形(例如,模製)以提供主體部分152c及側面部分152d。如可看出,主體部分152c可延伸以覆蓋IC總成100,且側面部分152d可自主體部分152c延伸以形成容納IC總成100的空腔133。
內部部分152a及外部部分152b可各自為藉由模製製程成形的相連材料結構。例如,內部部分152a可包括包含聚合物的單個連續材料結構,且外部部分152b可包括包含金屬的單個連續材料結構。主體部分152c及側面部分152d可共用內部部分152a及外部部分152b。在此方面,主體部分152c及側面部分152d可共用聚合物之相連內部材料及金屬之相連外部材料。
根據各種實施例,相連內部材料(例如,內部部分152a)可具有形成於主體部分152c中的開口130。IC總成100可包括產生熱的元件(例如,晶粒102),該等產生熱的元件經由開口130與相連外部材料(例如,外部部分152b)熱耦
接,如可看出的。雖然在圖1之實施例中描繪單個開口130,但是在其他實施中可穿過內部部分152a形成類似於開口130的多個開口,以允許IC總成之其他產生熱的元件或其他功率消散裝置經由多個開口中之個別開口與外部部分152b熱耦接。IC總成100之產生熱的元件可包括各種裝置,包括例如一或多個晶粒(例如,晶粒102)之電路。在一些實施例中,IC總成100可使用熱界面材料與外部部分152b之金屬熱耦接,該熱界面材料諸如例如相變熱油脂、導電熱塑性或熱固性及/或黏合材料、黏合劑。外部部分152b可由金屬組成,該金屬充當散熱片或離開IC總成100的熱路徑。
在一些實施例中,內部部分152a可由聚合物組成,該聚合物諸如例如ABS(丙烯腈-丁二烯-苯乙烯)、ABS+PC(ABS+聚碳酸酯)、縮醛(POM)、丙烯酸類(PMMA)、LCP(液晶聚合物)、PA-耐綸6(聚醯胺)、PA-耐綸6/6(聚醯胺)、PA-耐綸11(聚醯胺)、PBT(聚對酞酸丁二酯)、PC(聚碳酸酯)、PEI(聚醚醯亞胺)、PE(聚乙烯)、LDPE(低密度聚乙烯)、HDPE(高密度聚乙烯)、PET(聚對酞酸乙二酯)、PP(聚丙烯)、PPA(聚鄰苯二甲醯胺)、PPS(聚苯硫)、PS(聚苯乙烯)、HIPS(高衝擊聚苯乙烯)、PSU(聚碸)、PU(聚胺甲酸酯)、PVC(聚氯乙烯)、PVDF(聚偏二氟乙烯)、SAN(苯乙烯-丙烯醯腈)、TPE(熱塑性彈性體)或TPU(熱塑性聚胺甲酸酯)。在一些實施例中,外部部分152b可由金屬組成,該金屬諸如例如鋁(Al)、鐵(Fe)、鈦(Ti)、銅(Cu)、鎳(Ni)、鎂(Mg)、不銹鋼、英高鎳或以合金形式的各種金屬之適合的組合。根
據各種實施例,金屬可經包覆(例如,兩種金屬擴散接合在一起)或未經包覆。內部部分152a及外部部分152b在其他實施例中可由其他適合的材料組成。在一些實施例中,底漆材料(例如,圖4之底漆材料152e)可安置於內部部分152a與外部部分152b之間,以促進內部部分152a與外部部分152b之間的黏合。結合圖4進一步描述用於底漆材料之技術及組態。
外殼150可進一步包括基底部分154(例如,基底結構),該基底部分與上蓋部分152耦接。在一些實施例中,基底部分154可包括大體上平坦結構,該大體上平坦結構經組配以與上蓋部分152之側面部分152d耦接。當基底部分154與上蓋部分152耦接時,空腔133可提供空間以容納IC總成100。在一些實施例中,基底部分154可使用一或多個緊固機構156(例如,鎖扣結構)與上蓋部分152附接(例如,永久地或可移除地與該上蓋部分耦接),該一或多個緊固機構可作為模製製程之部分而整體形成以提供無螺桿附接。基底部分154及上蓋部分152在其他實施例中可使用其他緊固機構耦接在一起,該等其他緊固機構諸如例如由超音波焊接形成的接頭。外殼150在一些實施例中可經氣密密封或環境密封,以對IC總成100提供保護以免於環境因素或處理。例如,在一些實施例中,上蓋部分152之聚合物部分可與基底部分154之聚合物部分耦接。
在一些實施例中,IC總成100可安置於基底部分154與上蓋部分152之間。在一些實施例中,IC總成100可使
用任何適合的技術包括例如使用黏合劑與基底部分154耦接。IC總成可表示各種各樣的適合的IC裝置,包括例如在一實施例中之固態驅動機(SSD)之元件。在一些實施例中,外殼150及IC總成100可表示固態驅動機。
在一些實施例中,IC總成100可包括一或多個晶粒(下文中「晶粒102」),該一或多個晶粒與封裝基板121電氣地及/或實體地耦接。晶粒102可表示使用半導體製造技術由半導體材料(例如,矽)製成的離散產品,該等半導體製造技術諸如結合形成互補金屬氧化物半導體(CMOS)裝置使用的薄膜沉積、微影術、蝕刻等。在一些實施例中,晶粒102可為處理器、記憶體、SoC或ASIC,可包括上述各者或可為上述各者之一部分。
在一些實施例中,底部填充材料108(有時被稱為「膠囊封裝材料(encapsulant)」)可安置於晶粒102與封裝基板121之間,以促進黏合且/或保護晶粒102及封裝基板121之特徵。底部填充材料108可由電氣絕緣材料組成,且可膠囊封裝晶粒102及/或晶粒級互連結構106之至少一部分,如可看出。在一些實施例中,底部填充材料108處於與晶粒級互連結構106直接接觸中。
晶粒102可根據各種適合的組態附接至封裝基板121,該等適合的組態包括例如在倒裝晶片組態中與封裝基板121直接耦接,如所描繪。在倒裝晶片組態中,晶粒102之包括主動電路的主動側S1使用晶粒級互連結構106附接至封裝基板121之表面,該等晶粒級互連結構諸如凸塊、柱
或其他適合的結構,該等其他適合結構可亦電氣地耦接晶粒102與封裝基板121。晶粒102之主動側S1可包括電晶體裝置,且非活性側S2可與主動側S1相對而安置,如可看出。
晶粒102可通常包括半導體基板102a、一或多個裝置層(下文中「裝置層102b」)及一或多個互連層(下文中「互連層102c」)。半導體基板102a在一些實施例中可大體上由諸如例如矽的塊體半導體材料組成。裝置層102b可表示諸如電晶體裝置的主動元件形成於半導體基板102a上所在的區域。裝置層102b可包括例如諸如電晶體裝置之通道主體及/或源極區/汲極區的結構。互連層102c可包括互連結構,該等互連結構經組配以將電氣信號路由至裝置層102b中之主動裝置或路由來自該等主動裝置的電氣信號。例如,互連層102c可包括溝槽及/或通孔以提供電氣佈線及/或接觸。
在一些實施例中,晶粒級互連結構106可經組配以在晶粒102與其他電氣裝置之間路由電氣信號。電氣信號可包括例如結合晶粒102之操作使用的輸入/輸出(I/O)信號及/或功率/接地信號。
在一些實施例中,封裝基板121為具有核心及/或累積層的環氧基層壓基板,諸如,例如,ABF(Ajinomoto Build-up Film)基板。在其他實施例中,封裝基板121可為電路板,諸如,例如,使用任何適合的PCB技術形成的印刷電路板(PCB)。例如,PCB可包括電氣絕緣層,該等電氣絕緣層由諸如以下的材料組成:例如,聚四氟乙烯、諸如阻
燃劑4(FR-4)、FR-1的酚醛棉紙材料、棉紙,及諸如CEM-1或CEM-3的環氧樹脂材料或使用環氧樹脂預浸材料層壓在一起的玻璃布(woven glass)材料。PCB在其他實施例中可由其他適合的材料組成。封裝基板121在其他實施例中可包括其他適合類型之基板,包括例如由玻璃、陶瓷或半導體材料形成的基板。
封裝基板121可充當中介層以在晶粒102與諸如例如被動裝置(例如,被動裝置104)的其他組件或IC總成100外部的其他晶粒或組件之間路由電氣信號。封裝基板121可包括電氣佈線特徵,該等電氣佈線特徵經組配以將電氣信號路由至晶粒102或路由來自晶粒102的電氣信號。電氣佈線特徵可包括例如安置在封裝基板121之一或多個表面上的襯墊或軌跡(未示出)及/或諸如例如溝槽、通孔或用以路由電氣信號穿過封裝基板121的其他互連結構的內部佈線特徵(未示出)。例如,在一些實施例中,封裝基板121可包括諸如襯墊(未示出)的電氣佈線特徵,該等電氣佈線特徵經組配以接收晶粒102之個別晶粒級互連結構106。
IC總成100在其他實施例中可包括各種其他適合的組態,包括例如倒裝晶片及/或引線接合組態之適合的組合、中介層、包括系統級封裝(SiP)及/或層疊封裝(PoP)組態的多晶片封裝組態。在一些實施例中可使用用以在晶粒102與IC總成100之其他組件之間路由電氣信號的其他適合的技術。
在一些實施例中,外殼150可具有矩形剖面,如
可看出。在一些實施例中,上蓋部分152及/或基底部分154可具有矩形剖面(例如,當自俯視圖或仰視圖看時)。外殼150在其他實施例中可具有其他適合的剖面形狀。
圖2示意性地例示根據一些實施例之模製上蓋結構200的透視圖。模製上蓋結構200可表示圖1之上蓋部分152,且可與結合圖1之上蓋部分152所描述的實施例一致。根據各種實施例,模製上蓋結構200可包括內部部分152a及外部部分152b。開口130可形成於內部部分152a中以允許IC總成(例如,圖1之IC總成100)經由開口130與外部部分152b的熱耦接。外部部分152b可充當用於容納在模製上蓋結構內時的IC總成之熱傳導殼。
在一些實施例中,模製上蓋結構200可藉由使用諸如例如射出模製製程的模製製程來形成。內部部分152a可藉由將聚合物直接模製於外部部分152b之金屬上來形成。聚合物及金屬之組合在一些實施例中可具有大於鑄造鎂的合成剛性。在一些實施例中,外部部分152b可包括金屬之多個層。例如,外部部分152b可包括主要金屬層(例如,鋁),且包覆層(例如,鈦或不銹鋼)可形成於主要金屬層上(例如,藉由擴散接合製程)。在一些實施例中,外部部分152b可具有介於外部部分152b及內部部分152a之總組合厚度之約5%至20%之間(例如,10%)的厚度。外部部分152b在其他實施例中可具有其他適合的厚度。
根據各種實施例,模製上蓋結構200可提供相較於當前鑄造金屬外殼的較高剛性及較低質量的外殼。模製
上蓋結構200可進一步經由開口130促進熱消散。模製上蓋結構200之金屬-聚合物合成結構藉由模製製程之形成可相對於用以提供IC總成之外殼的金屬鑄造製程提供顯著成本節省。此外,模製上蓋結構200可允許IC總成之組件插入由模製上蓋結構200形成的外殼之壁(例如,圖1之外殼150中之開口130)中,此狀況可使外殼之厚度(圖1之厚度T)相對於鑄造金屬外殼減少~0.5毫米或更多,以提供具有減少的Z高度之外殼。
另外,模製上蓋結構200可不需要相對於鑄造金屬外殼的後整飾精整,且若需要,則允許外部部分152b之陽極化(例如,在模製之後)。模製上蓋結構200可將優越熱解決方案提供給僅由聚合物形成的外殼。模製製程可允許增加的內部模製特徵能力,諸如,例如,諸如緊固機構(例如,圖1之一或多個緊固機構156)的特徵之整合,該等緊固機構包括例如無螺桿機構。可出於各種機械、整飾及/或成本考慮而選擇外部部分152b之金屬,諸如,例如,鋁、鈦、包層等。此外,相對於諸如具有機械加工次要特徵及次要整飾精整的機械加工或鑄造底盤的外殼,模製上蓋結構200可為外殼提供較高拍率(例如,循環時間)。
圖3示意性地例示根據一些實施例之模製上蓋結構300的透視圖,該模製上蓋結構具有形成於內部部分152a中的多個開口130a、130b。模製上蓋結構300可與結合圖2之模製上蓋結構200所描述的實施例一致。在一些實施例中,多個開口130a、130b可形成為穿過內部部分152a以允許IC
總成(例如,圖1之IC總成100)之其他產生熱的元件經由多個開口130a、130b中之個別開口與外部部分152b熱耦接。開口130a、130b在其他實施例中可具有相較於所描繪的其他適合形狀。
圖4示意性地例示根據一些實施例之模製上蓋結構(例如,圖2或圖3之模製上蓋結構200或300)之一部分400的橫截面透視圖。根據各種實施例,底漆材料152e可安置於模製上蓋結構之內部部分152a與外部部分152b之間。
在一些實施例中,底漆材料152e可包括聚合物底漆系統,諸如,例如,環氧樹脂。聚合物底漆系統在一些實施例中可包括其他適合的熱固性塑膠及/或熱塑性塑膠,該等熱固性塑膠及/或熱塑性塑膠可具有相較於內部部分152a之聚合物的不同材料組成。在其他實施例中,底漆材料152e可包括奈米結構金屬氧化物,諸如,例如,氧化鋁包括多孔氧化鋁。內部部分152a之聚合物可充滿奈米結構氧化物中之孔以提高黏合。底漆材料152e在其他實施例中可包括其他適合的材料。
圖5示意性地例示根據一些實施例之在根據第一技術的製造之各種階段期間的上蓋結構(例如,圖2或圖3之模製上蓋結構200或300)。在500a處,描繪在以上蓋結構之形狀成形金屬之後的包含金屬的外部部分152b。外部部分152b可例如藉由將金屬之箔擊打及形成至所要的形狀來成形。
在500b處,描繪在將所成形金屬置放至模具590
中之後的外部部分152b。模具590可夾緊以在射出模製製程期間將外部部分152b固持於適當位置中。在一些實施例中,夾緊機構可經組配以允許金屬在聚合物之沉積期間滑動以限制金屬上之應變。
在500c處,描繪在使用射出模製製程將內部部分152a之聚合物沉積於外部部分152b上之後的外部部分152b。在一些實施例中,可藉由在射出模製製程期間於需要個別一或多個開口的區域中夾緊一或多個模具塊抵靠外部部分152b來在內部部分152a中形成一或多個開口(例如,圖2之開口130)。
在一些實施例中,底漆材料(未示出)可在將內部部分152a之聚合物沉積於外部部分152b上之前沉積於外部部分152b之表面上,以促進聚合物至外部部分152b之金屬的黏合。
在500d處,描繪在自模具590移除上蓋結構之後的上蓋結構。在自模具590移除上蓋結構之後,上蓋結構在一些實施例中可經去膠(deflashed)、清潔且/或陽極化。
圖6示意性地例示根據一些實施例之在根據第二技術的製造之各種階段期間的上蓋外殼(例如,圖2或圖3之模製上蓋外殼200或300)。在600a處,描繪在將金屬膜置放於模具590中之後的包含金屬的外部部分152b。金屬膜在一些實施例中可並非以上蓋結構之形式成形。例如,在一些實施例中,金屬膜可為大體上平坦的或一些其他形狀。
在600b處,描繪在同時成形金屬來以上蓋結構之
形式提供外部部分152b及使用注射模製製程將聚合物沉積於金屬上以提供內部部分152a之後的外部部分152b。例如,金屬膜可夾緊於模具中且聚合物可在高壓下經注射,此舉可使金屬成形以經模製為模具590之預先存在形狀,如可看出。
在一些實施例中,可藉由在射出模製製程期間於需要個別一或多個開口的區域中夾緊一或多個浮動模具塊抵靠外部部分152b來在內部部分152a中形成一或多個開口(例如,圖2之開口130)。浮動模具塊可自600a處之初始定位至600b處之成形定位遵循金屬膜。
在一些實施例中,底漆材料(未示出)可在將內部部分152a之聚合物沉積於外部部分152b上之前沉積於外部部分152b之表面上,以促進聚合物至外部部分152b之金屬的黏合。
在600c處,描繪在自模具590移除上蓋結構之後的上蓋結構。
圖7示意性地例示根據一些實施例之製造用於IC總成(例如,圖1之IC總成100)之外殼(例如,圖1之外殼150)之方法700的流程圖。方法700可與結合圖1至圖6所描述的技術一致且反之亦然。
在702處,方法700可包括使用模製製程形成合成上蓋結構(例如,圖2或圖3之模製上蓋結構200或300)。根據各種實施例,可根據結合圖5或圖6所描述的技術形成合成上蓋結構。例如,形成合成上蓋結構可包括成形金屬以提
供主體部分(例如,圖1之主體部分152c)之外部(例如,圖5之外部部分152b)及合成上蓋結構之側面部分(例如,圖1之側面部分152d),及將聚合物沉積於金屬上以提供主體部分及側面部分之內部(例如,圖5之內部部分152a)。
在一些實施例中,成形金屬及沉積聚合物可在射出模製製程期間同時執行。例如,沉積聚合物可成形金屬以提供主體部分及側面部分之外部(例如,如結合圖6所描述)。
形成合成上蓋結構可進一步包括在主體部分中形成一或多個開口(例如,圖3之開口130a、130b),使得IC總成可經由開口與外部部分熱耦接。例如,可使用模具嵌入物塊以在將聚合物沉積於金屬上時防止聚合物在將形成一或多個開口所在的區域中沉積於金屬上來形成一或多個開口。
在一些實施例中,形成合成上蓋結構可進一步包括在沉積聚合物之前將底漆材料(例如,圖4之底漆材料152e)提供於金屬上,以促進聚合物與金屬之間的黏合。在一些實施例中,形成合成上蓋結構可進一步包括形成緊固機構(例如,圖1之緊固機構156)之元件,該等元件經組配以與基底結構上之緊固機構之對應元件耦接或與該等對應元件配合。
在704處,方法700可包括提供基底結構(例如,圖1之基底部分154)。在一些實施例中,提供基底結構可包括根據任何適合的技術形成基底結構。基底結構可包括例
如經組配以與合成上蓋結構耦接以便容納IC總成的任何適合的材料結構。在一些實施例中,基底結構可包括緊固機構(例如,圖1之一或多個緊固機構156)之元件,該等元件經組配以與合成上蓋結構上之緊固機構之對應元件耦接或與該等對應元件配合。
在706處,方法700可包括耦接IC總成與基底結構。任何適合的技術可用來耦接IC總成與基底結構,包括例如黏合劑、機械緊固件或以其他方式相對於基底結構置放IC總成,使得當合成上蓋結構及基底結構耦接在一起時,IC總成容納於合成上蓋結構與基底結構之間的空腔(例如,圖1之空腔133)內。
在708處,方法700可包括耦接基底結構與合成上蓋結構。基底結構可使用任何適合的技術包括例如使用整合式緊固機構與合成上蓋結構耦接,可作為在702處之模製製程之部分來形成該等整合式緊固機構。在一些實施例中,耦接基底結構與合成上蓋結構可包括使用鎖扣緊固件永久地固定基底結構與上蓋結構。
在一些實施例中,基底結構與上蓋結構耦接,使得IC總成經由形成於內部部分中的一或多個開口與外部部分熱耦接。例如,IC總成可使用熱黏合劑或任何其他適合的技術與外部部分熱耦接。以最有助於理解所請求標的之方式,依次作為多個離散操作來描述各種操作。然而,描述之順序不應理解為暗示此等操作必須為依賴順序的。例如,在一些實施例中,可在結合702所描述的動作之前、之
後或與該等動作同時執行704及706處之動作。方法700可包括順序之其他適合的變化。
本揭示案之實施例可實行為使用任何適合的硬體及/或軟體以根據需要組配的系統。圖8示意性地例示根據一些實施例之計算裝置800,該計算裝置包括如本文所描述之用於IC總成(例如,圖1之IC總成100)之外殼(例如,圖1之外殼150)。計算裝置800可容納諸如母板802的板(例如,在殼體808中)。母板802可包括若干組件,包括但不限於處理器804及至少一通訊晶片806。處理器804可實體上且電氣地耦接至母板802。在一些實行方案中,至少一通訊晶片806可亦實體上且電氣地耦接至母板802。在進一步實行方案中,通訊晶片806可為處理器804之部分。「處理器」一詞可涉及處理來自暫存器及/或記憶體的電子資料以將該電子資料變換成可儲存在暫存器及/或記憶體中的其他電子資料的任何裝置或裝置之部分。
取決於計算裝置之應用,計算裝置800可包括可為或可並非實體上且電氣地耦接至母板802的其他組件。此等其他組件可包括但不限於依電性記憶體(例如,DRAM)、非依電性記憶體(例如,ROM)、快閃記憶體、圖形處理器、數位信號處理器、密碼機處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音訊編碼解碼器、視訊編碼解碼器、功率放大器、全球定位系統(GPS)裝置、指南針、蓋革(Geiger)計數器、加速計、陀螺儀、揚聲器、相機及大容量儲存裝置(諸如硬碟驅動機、光碟片
(CD)、數位通用碟片(DVD)等)。
通訊晶片806可允許用於資料往返於計算裝置800之傳送的無線通訊。「無線」上詞及其派生詞可用以描述可經由非固體媒體藉由調變電磁輻射之使用來通訊資料的電路、裝置、系統、方法、技術、通訊通道等。該術語並非暗示相關聯裝置不含有任何引線,但是在一些實施例中該等相關聯裝置可不含有任何引線。通訊晶片806可實行若干無線標準或協定中任一者,該等無線標準或協定包括但不限於電機電子工程師學會(IEEE)標準包括Wi-Fi(IEEE 802.11族)、IEEE 802.16標準(例如,IEEE 802.16-2005修正)、長期演進(LTE)計劃以及任何修正、更新及/或修訂(例如,先進LTE計劃、超行動寬帶(UMB)計劃(亦被稱為「3GPP2」等)。IEEE 802.16相容寬帶無線接取(BWA)網路通常被稱為WiMAX網路,代表全球互通微波接取(Worldwide Interoperability for Microwave Access)的縮寫字,該縮寫字為用於通過IEEE 802.16標準之一致及互通測試的產品之驗證標記。通訊晶片806可根據全球行動通訊系統(GSM)、通用封包無線電服務(GPRS)、全球行動通訊系統(UMTS)、高速封包接取(HSPA)、演進HSPA(E-HSPA)或LTE網路操作。通訊晶片806可根據增強資料速率GSM演進(EDGE)、GSMEDGE無線電接取網路(GERAN)、通用陸地無線電接取網路(UTRAN)或演進UTRAN(E-UTRAN)操作。通訊晶片806可根據分碼多重存取(CDMA)、分時多重存取(TDMA)、數位增強無線電信(DECT)、演進資料最佳化(EV-DO)、上述各
者之派生物以及指定為3G、4G、5G及其他的任何其他無線協定操作。通訊晶片806在其他實施例中可根據其他無線協定操作。
計算裝置800可包括多個通訊晶片806。例如,第一通訊晶片806可專用於較短範圍無線通訊,諸如Wi-Fi及藍芽,且第二通訊晶片806可專用於較長範圍無線通信,諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、EV-DO等。
在一些實施例中,記憶體諸如計算裝置之快閃記憶體或DRAM可為容納在如本文所描述之外殼(例如,圖1之外殼150)中的IC總成之組件。在其他實施例中,計算裝置之其他產生熱的裝置(例如,處理器804、通訊晶片806)可為容納在如本文所描述之外殼(例如,圖1之外殼150)中的IC總成之組件。
在各種實行方案中,計算裝置800可為膝上型電腦、隨身型易網機、筆記型電腦、超極緻筆電(ultrabook)、智慧型電話、平板電腦、個人數位助理(PDA)、超行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒(set-top box)、娛樂控制單元、數位相機、可攜式音樂播放器或數位視訊記錄器。計算裝置800在一些實施例中可為行動計算裝置。在進一步實行方案中,計算裝置800可為處理資料的任何其他電子裝置。
根據各種實施例,本揭示案描述用於積體電路
(IC)總成之外殼。外殼之實例1包括模製上蓋結構,該模製上蓋結構具有主體部分及側面部分,該側面部分自主體部分延伸且形成空腔,該空腔經組配以容納IC總成,其中主體部分及側面部分共用包含聚合物的相連內部材料且共用包含金屬的相連外部材料,該相連內部材料具有形成於主體部分中的開口,使得IC總成可經由開口與相連外部材料熱耦接。實例2可包括實例1之外殼,其中IC總成包括固態驅動機(SSD)之產生熱的元件。實例3可包括實例1之外殼,其中開口為多個開口之一,該等多個開口形成於主體部分中,使得IC總成可經由多個開口與相連外部材料熱耦接。實例4可包括實例1之外殼,其中聚合物係選自由以下各者組成之一群組:ABS(丙烯腈-丁二烯-苯乙烯)、ABS+PC(ABS+聚碳酸酯)、縮醛(POM)、丙烯酸類(PMMA)、LCP(液晶聚合物)、PA-耐綸6(聚醯胺)、PA-耐綸6/6(聚醯胺)、PA-耐綸11(聚醯胺)、PBT(聚對酞酸丁二酯)、PC(聚碳酸酯)、PEI(聚醚醯亞胺)、PE(聚乙烯)、LDPE(低密度聚乙烯)、HDPE(高密度聚乙烯)、PET(聚對酞酸乙二酯)、PP(聚丙烯)、PPA(聚鄰苯二甲醯胺)、PPS(聚苯硫)、PS(聚苯乙烯)、HIPS(高衝擊聚苯乙烯)、PSU(聚碸)、PU(聚胺甲酸酯)、PVC(聚氯乙烯)、PVDF(聚偏二氟乙烯)、SAN(苯乙烯-丙烯醯腈)、TPE(熱塑性彈性體)及TPU(熱塑性聚胺甲酸酯)。實例5可包括實例1之外殼,其中金屬係選自由以下各者組成之一群組:鋁(Al)、鐵(Fe)、鈦(Ti)、、銅(Cu)、鎳(Ni)、鎂(Mg)、不銹鋼及英高鎳。實例6可包括實例1至實例5中任何
實例之外殼,該外殼進一步包含底漆材料,該底漆材料安置於相連內部材料與相連外部材料之間,以促進相連內部材料與相連外部材料之間的黏合。實例7可包括實例6之外殼,其中底漆材料包含聚合物或奈米結構金屬氧化物。實例8可包括實例1至實例5中任何實例之外殼,該外殼進一步包含基底結構,該基底結構經組配以與模製上蓋結構耦接,使得當基底結構與模製上蓋結構耦接時,空腔安置於基底結構與模製上蓋結構之間。實例9可包括實例1至實例5中任何實例之外殼,其中模製上蓋結構具有矩形剖面。
根據各種實施例,本揭示案描述製造用於積體電路(IC)總成之外殼之方法。方法之實例10方法可包括使用模製製程形成上蓋結構,該上蓋結構具有主體部分及側面部分,該側面部分自主體部分延伸且形成空腔,該空腔經組配以容納IC總成,其中主體部分及側面部分共用包含聚合物的相連內部材料且共用包含金屬的相連外部材料,其中形成上蓋結構包含在主體部分中形成開口,使得IC總成可經由開口與相連外部材料熱耦接。實例11可包括實例10之方法,其中形成上蓋結構包含成形金屬以提供主體部分及側面部分之外部,及使用模製製程將聚合物沉積於金屬上以提供主體部分及側面部分之內部,其中模製製程為射出模製製程。實例12可包括實例11之方法,其中成形金屬及沉積聚合物係在射出模製製程期間同時執行。實例13可包括實例12之方法,其中沉積聚合物成形金屬以提供主體部分及側面部分之外部。實例14可包括實例11之方法,其中
在主體部分中形成開口包含使用模具嵌入物塊,以在將聚合物沉積於金屬上時防止聚合物在將形成開口所在的區域中沉積於金屬上。實例15可包括實例11之方法,其中形成上蓋結構進一步包含在沉積聚合物之前將底漆材料提供於金屬上,以促進聚合物與金屬之間的黏合。實例16可包括實例10至實例15中任何實例之方法,該方法進一步包含提供基底結構、耦接IC總成與基底結構,及耦接基底結構與上蓋結構,使得IC總成經由開口與相連外部材料熱耦接。實例17可包括實例16之方法,其中耦接基底結構與上蓋結構包含使用鎖扣緊固件永久地固定基底結構與上蓋結構。
根據各種實施例,本揭示案描述固態驅動機(SSD)。SSD之實例18可包括:模製上蓋結構,該模製上蓋結構具有主體部分及側面部分,該側面部分自主體部分延伸且形成空腔,該空腔經組配以容納積體電路(IC)總成,其中主體部分及側面部分共用包含聚合物的相連內部材料且共用包含金屬的相連外部材料,該相連內部材料具有形成於主體部分中的開口;基底結構,該基底結構與模製上蓋結構耦接,使得空腔安置於基底結構與模製上蓋結構之間;以及IC總成,該IC總成安置於基底結構與模製上蓋結構之間,其中IC總成經由開口與模製上蓋結構之相連外部材料熱耦接。實例19可包括實例18之SSD,其中開口為形成於主體部分中的多個開口之一,且IC總成經由該等多個開口與相連外部材料熱耦接。實例20可包括實例18至實例19中任何實例之SSD,該SSD進一步包含底漆材料,該底漆材料
安置於相連內部材料與相連外部材料之間,以促進相連內部材料與相連外部材料之間的黏合。
各種實施例可包括以上所述實施例包括以上以合取形式(及)(例如,「及」可為「及/或」)描述的實施例之替代性(或)實施例之任何適合的組合。此外,一些實施例可包括一或多個製品(例如,非暫時性電腦可讀媒體),該一或多個製品上儲存有指令,該等指令在被執行時導致以上所述實施例中任何實施例之動作。此外,一些實施例可包括設備或系統,該等設備或系統具有用於進行以上所述實施例之各種操作之任何適合的方法。
所例示實行方案之以上描述,包括摘要中所描述的內容,並非意欲為徹底的,或將本揭示案之實施例限制於所揭示之精確形式。雖然本文出於例示性目的描述特定實行方案及實例,但各種等效修改在本揭示案之範疇內係可能的,如熟習相關技術者將認識到的。
可根據以上詳細描述對本揭示案之實施例做出此等修改。在以下申請專利範圍中使用的術語不應理解為將本揭示案之各種實施例限制於說明書及申請專利範圍中所揭示的特定實行方案。實情為,範疇將完全由以下申請專利範圍決定,該等申請專利範圍將根據申請專利範圍解釋之所建立學說加以理解。
T‧‧‧厚度
S1‧‧‧主動側
S2‧‧‧非活性側
100‧‧‧積體電路(IC)總成
102‧‧‧晶粒
102a‧‧‧半導體基板
102b‧‧‧裝置層
102c‧‧‧互連層
104‧‧‧被動裝置
106‧‧‧晶粒級互連結構
108‧‧‧底部填充材料
121‧‧‧封裝基板
130‧‧‧開口
133‧‧‧空腔
150‧‧‧外殼
152‧‧‧上蓋部分
152a‧‧‧內部部分
152b‧‧‧外部部分
152c‧‧‧主體部分
152d‧‧‧側面部分
154‧‧‧基底部分
156‧‧‧緊固機構
Claims (20)
- 一種用於一積體電路(IC)總成之外殼,該外殼包含:一模製上蓋結構,其具有一主體部分,及一側面部分,該側面部分自該主體部分延伸且形成一空腔,該空腔經組配以容納該IC總成,其中該主體部分及該側面部分共用包含一聚合物的一相連內部材料且共用包含一金屬的一相連外部材料,該相連內部材料具有形成於該主體部分中的一開口,使得該IC總成可經由該開口與該相連外部材料熱耦接。
- 如請求項1之外殼,其中該IC總成包括一固態驅動機(SSD)之產生熱的元件。
- 如請求項1之外殼,其中該開口為多個開口之一,該等多個開口形成於該主體部分中,使得該IC總成可經由該等多個開口與該相連外部材料熱耦接。
- 如請求項1之外殼,其中該聚合物係選自由以下各者組成之一群組:ABS(丙烯腈-丁二烯-苯乙烯)、ABS+PC(ABS+聚碳酸酯)、縮醛(POM)、丙烯酸類(PMMA)、LCP(液晶聚合物)、PA-耐綸6(聚醯胺)、PA-耐綸6/6(聚醯胺)、PA-耐綸11(聚醯胺)、PBT(聚對酞酸丁二酯)、PC(聚碳酸酯)、PEI(聚醚醯亞胺)、PE(聚乙烯)、LDPE(低密度聚乙烯)、HDPE(高密度聚乙烯)、PET(聚 對酞酸乙二酯)、PP(聚丙烯)、PPA(聚鄰苯二甲醯胺)、PPS(聚苯硫)、PS(聚苯乙烯)、HIPS(高衝擊聚苯乙烯)、PSU(聚碸)、PU(聚胺甲酸酯)、PVC(聚氯乙烯)、PVDF(聚偏二氟乙烯)、SAN(苯乙烯-丙烯醯腈)、TPE(熱塑性彈性體)及TPU(熱塑性聚胺甲酸酯)。
- 如請求項1之外殼,其中該金屬係選自由以下各者組成之一群組:鋁(Al)、鐵(Fe)、鈦(Ti)、、銅(Cu)、鎳(Ni)、鎂(Mg)、不銹鋼及英高鎳。
- 如請求項1之外殼,其進一步包含:一底漆材料,其安置於該相連內部材料與該相連外部材料之間,以促進該相連內部材料與該相連外部材料之間的黏合。
- 如請求項6之外殼,其中該底漆材料包含一聚合物或奈米結構金屬氧化物。
- 如請求項1之外殼,其進一步包含:一基底結構,其經組配以與該模製上蓋結構耦接,使得當該基底結構與該模製上蓋結構耦接時,該空腔安置於該基底結構與該模製上蓋結構之間。
- 如請求項1之外殼,其中該模製上蓋結構具有一矩形外形。
- 一種製造用於一積體電路(IC)總成之一外殼之方法,該方法包含:使用一模製製程形成一上蓋結構,該上蓋結構具有一主體部分及一側面部分,該側面部分自該主體部分延 伸且形成一空腔,該空腔經組配以容納該IC總成,其中該主體部分及該側面部分共用包含一聚合物的一相連內部材料且共用包含一金屬的一相連外部材料;其中形成該上蓋結構包含在該主體部分中形成一開口,使得該IC總成可經由該開口與該相連外部材料熱耦接。
- 如請求項10之方法,其中形成該上蓋結構包含:成形該金屬以提供該主體部分及該側面部分之一外部;以及使用該模製製程將該聚合物沉積於該金屬上以提供該主體部分及該側面部分之一內部,其中該模製製程為一射出模製製程。
- 如請求項11之方法,成形該金屬及沉積該聚合物係在該射出模製製程期間同時執行。
- 如請求項12之方法,其中沉積該聚合物成形該金屬以提供該主體部分及該側面部分之該外部。
- 如請求項11之方法,其中在該主體部分中形成該開口包含使用模具嵌入物塊,以在將該聚合物沉積於該金屬上時防止該聚合物在將形成該開口所在的一區域中沉積於該金屬上。
- 如請求項11之方法,其中形成該上蓋結構進一步包含:在沉積該聚合物之前將一底漆材料提供於該金屬上,以促進該聚合物與該金屬之間的黏合。
- 如請求項10之方法,其進一步包含: 提供一基底結構;耦接該IC總成與該基底結構;以及耦接該基底結構與該上蓋結構,使得該IC總成經由該開口與該相連外部材料熱耦接。
- 如請求項16之方法,其中耦接該基底結構與該上蓋結構包含使用鎖扣緊固件永久地固定該基底結構與該上蓋結構。
- 一種固態驅動機(SSD),其包含:一模製上蓋結構,其具有一主體部分,及一側面部分,其自該主體部分延伸且形成一空腔,該空腔經組配以容納一積體電路(IC)總成,其中該主體部分及該側面部分共用包含一聚合物的一相連內部材料且共用包含一金屬的一相連外部材料,該相連內部材料具有形成於該主體部分中的一開口;一基底結構,其與該模製上蓋結構耦接,使得該空腔安置於該基底結構與該模製上蓋結構之間;以及該IC總成安置於該基底結構與該模製上蓋結構之間,其中該IC總成經由該開口與該模製上蓋結構之該相連外部材料熱耦接。
- 如請求項18之SSD,其中:該開口為形成於該主體部分中的多個開口之一;且 該IC總成經由該等多個開口與該相連外部材料熱耦接。
- 如請求項18之SSD,其進一步包含:一底漆材料,其安置於該相連內部材料與該相連外部材料之間,以促進該相連內部材料與該相連外部材料之間的黏合。
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US9607914B2 (en) | 2017-03-28 |
CN106233457A (zh) | 2016-12-14 |
SG11201608277YA (en) | 2016-10-28 |
EP3143643A4 (en) | 2017-12-27 |
WO2015174993A1 (en) | 2015-11-19 |
US20160268178A1 (en) | 2016-09-15 |
JP2017516309A (ja) | 2017-06-15 |
TW201543620A (zh) | 2015-11-16 |
KR20160135286A (ko) | 2016-11-25 |
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