JP2017516309A - 集積回路アセンブリ用の成形コンポジットエンクロージャ - Google Patents
集積回路アセンブリ用の成形コンポジットエンクロージャ Download PDFInfo
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- JP2017516309A JP2017516309A JP2016567225A JP2016567225A JP2017516309A JP 2017516309 A JP2017516309 A JP 2017516309A JP 2016567225 A JP2016567225 A JP 2016567225A JP 2016567225 A JP2016567225 A JP 2016567225A JP 2017516309 A JP2017516309 A JP 2017516309A
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- assembly
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Abstract
Description
様々な実施形態によれば、本開示は集積回路(IC)アセンブリ用の筐体を記述する。筐体の例1は、成形蓋構造を含み、前記成形蓋構造は、本体部分と、前記本体部分から延在し、前記ICアセンブリを収容するように構成されたキャビティを形成する側面部分とを有し、前記本体部分及び前記側面部分は、ポリマーを有する連続した内側材料を共有し、且つ金属を有する連続した外側材料を共有し、前記連続した内側材料は、前記本体部分に形成された開口を有し、前記ICアセンブリが前記開口を通して前記連続した外側材料と熱的に結合され得るようにされている。例2は、前記ICアセンブリがソリッドステートドライブ(SSD)の発熱素子を含む、例1の筐体を含み得る。例3は、前記開口が、前記本体部分に形成された複数の開口のうちの1つであり、前記ICアセンブリが前記複数の開口を通して前記連続した外側材料と熱的に結合され得るようにされる、例1の筐体を含み得る。例4は、前記ポリマーが、ABS(アクリロニトリルブタジエンスチレン)、ABS+PC(ABS+ポリカーボネート)、アセタール(POM)、アクリル(PMMA)、LCP(液晶ポリマー)、PA−ナイロン6(ポリアミド)、PA−ナイロン6/6(ポリアミド)、PA−ナイロン11(ポリアミド)、PBT(ポリブチレンテレフタレート)、PC(ポリカーボネート)、PEI(ポリエーテルイミド)、PE(ポリエチレン)、LDPE(低密度ポリエチレン)、HDPE(高密度ポリエチレン)、PET(ポリエチレンテレフタレート)、PP(ポリプロピレン)、PPA(ポリフタルアミド)、PPS(ポリフェニレンサルファイド)、PS(ポリスチレン)、HIPS(耐衝撃性ポリスチレン)、PSU(ポリスルホン)、PU(ポリウレタン)、PVC(ポリ塩化ビニル)、PVDF(ポリフッ化ビニリデン)、SAN(スチレンアクリロニトリル)、TPE(熱可塑性エラストマ)、及びTPU(熱可塑性ポリウレタン)からなる群から選択される、例1に筐体を含み得る。例5は、前記金属が、アルミニウム(Al)、鉄(Fe)、チタン(Ti)、銅(Cu)、ニッケル(Ni)、マグネシウム(Mg)、ステンレス鋼、及びインコネルからなる群から選択される、例1に筐体を含み得る。例6は、前記連続した内側材料と前記連続した外側材料との間の接着を促進するために前記連続した内側材料と前記連続した外側材料との間に配置された下塗材、を更に有する例1乃至5の何れかの筐体を含み得る。例7は、前記下塗材が、ポリマー又はナノ構造金属酸化物を有する、例6の筐体を含み得る。例8は、前記成形蓋構造と結合するように構成されたベース構造であり、当該ベース構造が前記成形蓋構造と結合されるときに、前記キャビティが当該ベース構造と前記成形蓋構造との間に配置されるように構成されているベース構造、を更に有する例1乃至5の何れかの筐体を含み得る。例9は、前記成形蓋構造が矩形プロファイルを有する、例1乃至5の何れかの筐体を含み得る。
Claims (20)
- 集積回路(IC)アセンブリ用の筐体であって、
当該筐体は成形蓋構造を有し、
前記成形蓋構造は、
本体部分と、
前記本体部分から延在し、前記ICアセンブリを収容するように構成されたキャビティを形成する側面部分と
を有し、前記本体部分及び前記側面部分は、ポリマーを有する連続した内側材料を共有し、且つ金属を有する連続した外側材料を共有し、前記連続した内側材料は、前記本体部分に形成された開口を有し、前記ICアセンブリが前記開口を通して前記連続した外側材料と熱的に結合され得るようにされている、
筐体。 - 前記ICアセンブリは、ソリッドステートドライブ(SSD)の発熱素子を含んでいる、請求項1に記載の筐体。
- 前記開口は、前記本体部分に形成された複数の開口のうちの1つであり、前記ICアセンブリが前記複数の開口を通して前記連続した外側材料と熱的に結合され得るようにされている、請求項1に記載の筐体。
- 前記ポリマーは、ABS(アクリロニトリルブタジエンスチレン)、ABS+PC(ABS+ポリカーボネート)、アセタール(POM)、アクリル(PMMA)、LCP(液晶ポリマー)、PA−ナイロン6(ポリアミド)、PA−ナイロン6/6(ポリアミド)、PA−ナイロン11(ポリアミド)、PBT(ポリブチレンテレフタレート)、PC(ポリカーボネート)、PEI(ポリエーテルイミド)、PE(ポリエチレン)、LDPE(低密度ポリエチレン)、HDPE(高密度ポリエチレン)、PET(ポリエチレンテレフタレート)、PP(ポリプロピレン)、PPA(ポリフタルアミド)、PPS(ポリフェニレンサルファイド)、PS(ポリスチレン)、HIPS(耐衝撃性ポリスチレン)、PSU(ポリスルホン)、PU(ポリウレタン)、PVC(ポリ塩化ビニル)、PVDF(ポリフッ化ビニリデン)、SAN(スチレンアクリロニトリル)、TPE(熱可塑性エラストマ)、及びTPU(熱可塑性ポリウレタン)からなる群から選択されている、請求項1に記載の筐体。
- 前記金属は、アルミニウム(Al)、鉄(Fe)、チタン(Ti)、銅(Cu)、ニッケル(Ni)、マグネシウム(Mg)、ステンレス鋼、及びインコネルからなる群から選択されている、請求項1に記載の筐体。
- 前記連続した内側材料と前記連続した外側材料との間の接着を促進するために前記連続した内側材料と前記連続した外側材料との間に配置された下塗材、
を更に有する請求項1乃至5の何れかに記載の筐体。 - 前記下塗材は、ポリマー又はナノ構造金属酸化物を有する、請求項6に記載の筐体。
- 前記成形蓋構造と結合するように構成されたベース構造であり、当該ベース構造が前記成形蓋構造と結合されるときに、前記キャビティが当該ベース構造と前記成形蓋構造との間に配置されるように構成されているベース構造、
を更に有する請求項1乃至5の何れかに記載の筐体。 - 前記成形蓋構造は矩形プロファイルを有する、請求項1乃至5の何れかに記載の筐体。
- 集積回路(IC)アセンブリ用の筐体を製造する方法であって、
成形プロセスを用いて蓋構造を形成することを有し、
前記蓋構造は、本体部分と、該本体部分から延在し、前記ICアセンブリを収容するように構成されたキャビティを形成する側面部分とを有し、前記本体部分及び前記側面部分は、ポリマーを有する連続した内側材料を共有し、且つ金属を有する連続した外側材料を共有し、
前記蓋構造を形成することは、前記ICアセンブリが開口を通して前記連続した外側材料と熱的に結合され得るように前記本体部分に開口を形成することを有する、
方法。 - 前記蓋構造を形成することは、
前記金属を整形して、前記本体部分及び前記側面部分の外側を設け、且つ
射出成形プロセスである前記成形プロセスを用いて前記金属上に前記ポリマーを堆積して、前記本体部分及び前記側面部分の内側を設ける
ことを有する、請求項10に記載の方法。 - 前記金属を整形すること及び前記ポリマーを堆積することが、前記射出成形プロセス中に同時に行われる、請求項11に記載の方法。
- 前記ポリマーを堆積することが、前記本体部分及び前記側面部分の外側を設けるように前記金属を整形する、請求項12に記載の方法。
- 前記本体部分に前記開口を形成することは、金型挿入ブロックを用いて、前記金属上に前記ポリマーを堆積するときに、前記開口が形成されるべき領域の前記金属上に前記ポリマーが堆積されることを防止することを有する、請求項11に記載の方法。
- 前記蓋構造を形成することは更に、前記ポリマーと前記金属との間の接着を促進するために、前記ポリマーを堆積することに先立って、前記金属上に下塗材を配設することを有する、請求項11に記載の方法。
- ベース構造を用意し、
前記ICアセンブリを前記ベース構造と結合し、且つ
前記ICアセンブリが前記開口を通して前記連続した外側材料と熱的に結合されるように、前記ベース構造を前記蓋構造と結合する
ことを更に有する請求項10乃至15の何れかに記載の方法。 - 前記ベース構造を前記蓋構造と結合することは、スナップファスナを用いて前記ベース構造を前記蓋構造に取り外し不可能に固定することを有する、請求項16に記載の方法。
- 成形蓋構造であり、
本体部分と、
前記本体部分から延在し、集積回路(IC)アセンブリを収容するように構成されたキャビティを形成する側面部分と
を有し、前記本体部分及び前記側面部分は、ポリマーを有する連続した内側材料を共有し、且つ金属を有する連続した外側材料を共有し、前記連続した内側材料は、前記本体部分に形成された開口を有する、
成形蓋構造と、
ベース構造であり、当該ベース構造と前記成形蓋構造との間に前記キャビティが配置されるように、前記成形蓋構造と結合されたベース構造と、
前記ベース構造と前記成形蓋構造との間に配置された前記ICアセンブリであり、前記開口を通して前記成形蓋構造の前記連続した外側材料と熱的に結合された前記ICアセンブリと、
を有するソリッドステートドライブ(SSD)。 - 前記開口は、前記本体部分に形成された複数の開口のうちの1つであり、且つ
前記ICアセンブリが、前記複数の開口を通して前記連続した外側材料と熱的に結合されている、
請求項18に記載のSSD。 - 前記連続した内側材料と前記連続した外側材料との間の接着を促進するために前記連続した内側材料と前記連続した外側材料との間に配置された下塗材、
を更に有する請求項18又は19に記載のSSD。
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202016008419U1 (de) * | 2015-12-23 | 2017-12-20 | Apple Inc. | Gehäuse mit metallischer lnnenflächenschicht |
US10447834B2 (en) | 2016-09-21 | 2019-10-15 | Apple Inc. | Electronic device having a composite structure |
US11202396B2 (en) | 2017-05-19 | 2021-12-14 | Rolls-Royce Corporation | Additive manufacturing of engine control component |
CN107256814A (zh) * | 2017-06-11 | 2017-10-17 | 武城县光明电力工程有限公司 | 一种组合式联动开关 |
KR102385570B1 (ko) | 2018-03-09 | 2022-04-12 | 삼성전자주식회사 | 솔리드 스테이트 드라이브 케이스 및 이를 이용한 솔리드 스테이트 드라이브 장치 |
US11289401B2 (en) * | 2019-05-15 | 2022-03-29 | Powertech Technology Inc. | Semiconductor package |
US11456287B2 (en) * | 2019-08-28 | 2022-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of fabricating the same |
EP3923687B1 (en) | 2020-06-09 | 2024-04-03 | Samsung Electronics Co., Ltd. | Memory device and electronic device including the same |
USD988318S1 (en) | 2020-09-10 | 2023-06-06 | Samsung Electronics Co., Ltd. | Solid state drive memory device |
US20210153340A1 (en) * | 2020-12-18 | 2021-05-20 | Intel Corporation | Electromagnetic interference shielding enclosure with thermal conductivity |
CN112582352B (zh) * | 2020-12-22 | 2022-08-30 | 江西龙芯微科技有限公司 | 一种集成电路封装外壳 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114664A (ja) * | 1991-05-31 | 1993-05-07 | Toshiba Chem Corp | 電子機器筐体の製造方法 |
JPH08263172A (ja) * | 1995-03-28 | 1996-10-11 | Toshiba Corp | 電子機器筐体構造及び電子機器筐体の製造方法 |
JPH09307013A (ja) * | 1996-05-10 | 1997-11-28 | Mitsui High Tec Inc | 半導体集積回路装置およびその製造方法 |
JP2000298979A (ja) * | 1999-04-12 | 2000-10-24 | Fujitsu Ltd | 記憶装置 |
JP2004363192A (ja) * | 2003-06-02 | 2004-12-24 | Ikeda Electric Co Ltd | 配線ブロックの収納構造及び配線ブロックの収納方法 |
JP2007299961A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体装置、および半導体装置の製造方法 |
JP2010108879A (ja) * | 2008-10-31 | 2010-05-13 | Toshiba Lighting & Technology Corp | 電気機器及び照明器具 |
JP2010225762A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Lighting & Technology Corp | 配線基板収容装置および照明器具 |
JP2011134138A (ja) * | 2009-12-24 | 2011-07-07 | Toshiba Corp | 半導体記憶装置 |
WO2012111254A1 (ja) * | 2011-02-15 | 2012-08-23 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102262A (ja) * | 1991-10-03 | 1993-04-23 | Hitachi Ltd | 半導体装置及びそれを実装した実装装置 |
KR100327926B1 (ko) * | 1993-03-24 | 2002-06-20 | 블레이어 에프.모리슨 | 집적회로패키징 |
US5550403A (en) * | 1994-06-02 | 1996-08-27 | Lsi Logic Corporation | Improved laminate package for an integrated circuit and integrated circuit having such a package |
US6703560B2 (en) * | 1998-09-15 | 2004-03-09 | International Business Machines Corporation | Stress resistant land grid array (LGA) module and method of forming the same |
US6275381B1 (en) * | 1998-12-10 | 2001-08-14 | International Business Machines Corporation | Thermal paste preforms as a heat transfer media between a chip and a heat sink and method thereof |
US6585925B2 (en) * | 2000-12-27 | 2003-07-01 | Intel Corporation | Process for forming molded heat dissipation devices |
US20040238947A1 (en) * | 2003-05-28 | 2004-12-02 | Intel Corporation | Package and method for attaching an integrated heat spreader |
JP4294405B2 (ja) * | 2003-07-31 | 2009-07-15 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4334542B2 (ja) * | 2003-08-28 | 2009-09-30 | 富士通株式会社 | パッケージ構造 |
WO2005055317A1 (ja) * | 2003-12-05 | 2005-06-16 | Matsushita Electric Industrial Co., Ltd. | パッケージされた電子素子、及び電子素子パッケージの製造方法 |
US7439618B2 (en) * | 2005-03-25 | 2008-10-21 | Intel Corporation | Integrated circuit thermal management method and apparatus |
US7989947B2 (en) * | 2007-03-06 | 2011-08-02 | Panasonic Corporation | Semiconductor device and method of manufacturing the same |
US7851906B2 (en) * | 2007-03-26 | 2010-12-14 | Endicott Interconnect Technologies, Inc. | Flexible circuit electronic package with standoffs |
JP2010010599A (ja) * | 2008-06-30 | 2010-01-14 | Fuji Polymer Industries Co Ltd | 熱拡散シート |
US8018072B1 (en) * | 2008-12-23 | 2011-09-13 | Amkor Technology, Inc. | Semiconductor package having a heat spreader with an exposed exterion surface and a top mold gate |
KR20100101958A (ko) * | 2009-03-10 | 2010-09-20 | 삼성전자주식회사 | 슈퍼 커패시터를 포함하는 고체 상태 구동기 |
US8969132B2 (en) * | 2010-09-20 | 2015-03-03 | Nuvotronics, Llc | Device package and methods for the fabrication thereof |
US8310040B2 (en) * | 2010-12-08 | 2012-11-13 | General Electric Company | Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof |
DE102010054782A1 (de) * | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches Bauelement |
US8637985B2 (en) * | 2011-02-16 | 2014-01-28 | ISC8 Inc. | Anti-tamper wrapper interconnect method and a device |
JP2013069748A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | ベースプレートおよび半導体装置 |
US8643169B2 (en) * | 2011-11-09 | 2014-02-04 | Freescale Semiconductor, Inc. | Semiconductor sensor device with over-molded lid |
CN104220954B (zh) | 2012-05-17 | 2018-07-17 | 英特尔公司 | 用于装置制造的薄膜插入模制 |
KR20140004864A (ko) | 2012-07-03 | 2014-01-14 | 주식회사 휘닉스소재 | 에스에스디용 방열케이스 |
US20140036435A1 (en) | 2012-08-03 | 2014-02-06 | Mosaid Technologies Incorporated | Storage system having a heatsink |
US9159643B2 (en) * | 2012-09-14 | 2015-10-13 | Freescale Semiconductor, Inc. | Matrix lid heatspreader for flip chip package |
TWM468135U (zh) | 2013-07-22 | 2013-12-11 | Akasa Asia Corp | 用於小型機板的無風扇機殼 |
US9379074B2 (en) * | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9269700B2 (en) * | 2014-03-31 | 2016-02-23 | Micron Technology, Inc. | Stacked semiconductor die assemblies with improved thermal performance and associated systems and methods |
-
2014
- 2014-05-15 EP EP14891807.1A patent/EP3143643B1/en active Active
- 2014-05-15 CN CN201480078014.3A patent/CN106233457B/zh active Active
- 2014-05-15 SG SG11201608277YA patent/SG11201608277YA/en unknown
- 2014-05-15 KR KR1020167028668A patent/KR101978027B1/ko active IP Right Grant
- 2014-05-15 US US14/434,239 patent/US9607914B2/en active Active
- 2014-05-15 WO PCT/US2014/038273 patent/WO2015174993A1/en active Application Filing
- 2014-05-15 JP JP2016567225A patent/JP6382348B2/ja active Active
-
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- 2015-04-10 TW TW104111614A patent/TWI571976B/zh active
-
2017
- 2017-02-13 US US15/431,296 patent/US10056308B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114664A (ja) * | 1991-05-31 | 1993-05-07 | Toshiba Chem Corp | 電子機器筐体の製造方法 |
JPH08263172A (ja) * | 1995-03-28 | 1996-10-11 | Toshiba Corp | 電子機器筐体構造及び電子機器筐体の製造方法 |
JPH09307013A (ja) * | 1996-05-10 | 1997-11-28 | Mitsui High Tec Inc | 半導体集積回路装置およびその製造方法 |
JP2000298979A (ja) * | 1999-04-12 | 2000-10-24 | Fujitsu Ltd | 記憶装置 |
JP2004363192A (ja) * | 2003-06-02 | 2004-12-24 | Ikeda Electric Co Ltd | 配線ブロックの収納構造及び配線ブロックの収納方法 |
JP2007299961A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体装置、および半導体装置の製造方法 |
JP2010108879A (ja) * | 2008-10-31 | 2010-05-13 | Toshiba Lighting & Technology Corp | 電気機器及び照明器具 |
JP2010225762A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Lighting & Technology Corp | 配線基板収容装置および照明器具 |
JP2011134138A (ja) * | 2009-12-24 | 2011-07-07 | Toshiba Corp | 半導体記憶装置 |
WO2012111254A1 (ja) * | 2011-02-15 | 2012-08-23 | パナソニック株式会社 | 半導体装置及びその製造方法 |
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