TWI571633B - 用於特徵化物件及監測製造製程之方法及設備 - Google Patents

用於特徵化物件及監測製造製程之方法及設備 Download PDF

Info

Publication number
TWI571633B
TWI571633B TW101126759A TW101126759A TWI571633B TW I571633 B TWI571633 B TW I571633B TW 101126759 A TW101126759 A TW 101126759A TW 101126759 A TW101126759 A TW 101126759A TW I571633 B TWI571633 B TW I571633B
Authority
TW
Taiwan
Prior art keywords
article
composition
measurement
determining
depth
Prior art date
Application number
TW101126759A
Other languages
English (en)
Chinese (zh)
Other versions
TW201305556A (zh
Inventor
強納森Ｄ 哈德曼
席亞朗 約翰 派崔克 歐康納
傑 威爾金斯
Original Assignee
伊雷克托科學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 伊雷克托科學工業股份有限公司 filed Critical 伊雷克托科學工業股份有限公司
Publication of TW201305556A publication Critical patent/TW201305556A/zh
Application granted granted Critical
Publication of TWI571633B publication Critical patent/TWI571633B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
TW101126759A 2011-07-25 2012-07-25 用於特徵化物件及監測製造製程之方法及設備 TWI571633B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161511197P 2011-07-25 2011-07-25

Publications (2)

Publication Number Publication Date
TW201305556A TW201305556A (zh) 2013-02-01
TWI571633B true TWI571633B (zh) 2017-02-21

Family

ID=47597925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101126759A TWI571633B (zh) 2011-07-25 2012-07-25 用於特徵化物件及監測製造製程之方法及設備

Country Status (6)

Country Link
US (1) US9157876B2 (enExample)
JP (1) JP2014526148A (enExample)
KR (1) KR20140045991A (enExample)
CN (1) CN103733020A (enExample)
TW (1) TWI571633B (enExample)
WO (1) WO2013016399A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI767576B (zh) * 2020-02-21 2022-06-11 美商奈米創尼克影像公司 用於製造程序之系統、方法及媒介
US12551460B2 (en) 2017-12-05 2026-02-17 Pds Biotechnology Coporation Methods and compositions comprising cationic lipids for stimulating type 1 interferon genes

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2532068B (en) 2014-11-07 2017-05-31 Thermo Fisher Scient (Ecublens) Sarl Apparatus and method for controlling an atomic emission spectrometer
US11557048B2 (en) 2015-11-16 2023-01-17 Applied Materials, Inc. Thickness measurement of substrate using color metrology
US10565701B2 (en) 2015-11-16 2020-02-18 Applied Materials, Inc. Color imaging for CMP monitoring
EP3257160A1 (en) 2016-04-19 2017-12-20 Huawei Technologies Co., Ltd. Concurrent segmentation using vector processing
EP3251216A1 (en) 2016-04-19 2017-12-06 Huawei Technologies Co., Ltd. Vector processing for segmentation hash values calculation
JP2019060831A (ja) * 2017-09-28 2019-04-18 株式会社島津製作所 レーザ誘起分析装置、および、レーザ誘起分析方法
US11100628B2 (en) 2019-02-07 2021-08-24 Applied Materials, Inc. Thickness measurement of substrate using color metrology

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1137962A (ja) * 1997-07-23 1999-02-12 Oki Electric Ind Co Ltd ホール内面の組成分布検出方法および半導体装置の検査方法
US20020018217A1 (en) * 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US6694284B1 (en) * 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
TW200720649A (en) * 2005-08-26 2007-06-01 Electro Scient Ind Inc Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target
US7298496B2 (en) * 2004-05-21 2007-11-20 Zetetic Institute Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
US20100271621A1 (en) * 2000-09-20 2010-10-28 Kla-Tencor Technologies Corporation Methods and systems for determining a critical dimension and overlay of a specimen

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521525A (en) 1994-04-15 1996-05-28 University Of North Carolina Method and apparatus for measuring the doping density profile of a semiconductor layer
US5719796A (en) 1995-12-04 1998-02-17 Advanced Micro Devices, Inc. System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback
EP1909318A3 (en) 1996-03-19 2009-12-09 Hitachi, Ltd. Process management system
US6055460A (en) * 1997-08-06 2000-04-25 Advanced Micro Devices, Inc. Semiconductor process compensation utilizing non-uniform ion implantation methodology
US6274449B1 (en) 1997-12-23 2001-08-14 Texas Instruments Incorporated Method of pocket implant modeling for a CMOS process
US6311096B1 (en) 1999-04-01 2001-10-30 Texas Instruments Incorporated Design of microelectronic process flows for manufacturability and performance
US6878900B2 (en) 2000-01-27 2005-04-12 National Research Council Of Canada Method and apparatus for repair of defects in materials with short laser pulses
US6622059B1 (en) 2000-04-13 2003-09-16 Advanced Micro Devices, Inc. Automated process monitoring and analysis system for semiconductor processing
WO2002025708A2 (en) * 2000-09-20 2002-03-28 Kla-Tencor-Inc. Methods and systems for semiconductor fabrication processes
US6326220B1 (en) 2000-11-11 2001-12-04 Macronix International Co., Ltd. Method for determining near-surface doping concentration
US6638778B1 (en) 2002-02-25 2003-10-28 Advanced Micro Devices, Inc. Method for determining, tracking and/or controlling processing based upon silicon characteristics
US7074270B2 (en) 2003-04-02 2006-07-11 Seiko Epson Corporation Method for predicting the behavior of dopant and defect components
US7248367B2 (en) * 2003-06-10 2007-07-24 Therma-Wave, Inc. Characterization of ultra shallow junctions in semiconductor wafers
US7462502B2 (en) 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7379924B1 (en) 2004-12-01 2008-05-27 Advanced Micro Devices, Inc. Quantifying and predicting the impact of line edge roughness on device reliability and performance
US7403023B2 (en) 2005-03-14 2008-07-22 Qc Solutions, Inc. Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.
US7411188B2 (en) 2005-07-11 2008-08-12 Revera Incorporated Method and system for non-destructive distribution profiling of an element in a film
JP2007036068A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 不良原因特定システム、不良原因特定方法及び半導体装置の製造方法
JP2007059721A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Works Ltd 半導体製造方法及び半導体製造システム
TW200830443A (en) 2006-07-27 2008-07-16 Qc Solutions Inc Probes and methods for semiconductor wafer analysis
US7512499B1 (en) 2006-12-20 2009-03-31 National Semiconductor Corporation System and method for determining substrate doping density in metal oxide semiconductor devices
US8396582B2 (en) 2008-03-08 2013-03-12 Tokyo Electron Limited Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool
US8877524B2 (en) 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
DE102008021556B4 (de) 2008-04-30 2019-06-06 Advanced Micro Devices, Inc. Verfahren und System für zweistufige Vorhersage einer Qualitätsverteilung von Halbleiterbauelementen
DE102008021557B4 (de) 2008-04-30 2011-07-28 Globalfoundries Inc. Verfahren zum Überwachen einer vorhergesagten Produktqualitätsverteilung
EP2331946B1 (en) 2008-08-29 2018-12-26 Carl Zeiss Microscopy, LLC Ion beam stabilization
US8204721B2 (en) 2009-06-29 2012-06-19 Sentinel Ic Technologies, Inc. Apparatus and method for emulation of process variation induced in split process semiconductor wafers
US8486726B2 (en) 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier
KR20110106709A (ko) 2010-03-23 2011-09-29 삼성전자주식회사 레이아웃 검사 방법
JP2011215749A (ja) 2010-03-31 2011-10-27 Renesas Electronics Corp 半導体装置設計支援方法、半導体装置設計支援プログラム、及び半導体装置設計支援装置
US20110313748A1 (en) 2010-06-16 2011-12-22 Li Zhanming Method of simulation and design of a semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1137962A (ja) * 1997-07-23 1999-02-12 Oki Electric Ind Co Ltd ホール内面の組成分布検出方法および半導体装置の検査方法
US20020018217A1 (en) * 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US6694284B1 (en) * 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US20100271621A1 (en) * 2000-09-20 2010-10-28 Kla-Tencor Technologies Corporation Methods and systems for determining a critical dimension and overlay of a specimen
US7298496B2 (en) * 2004-05-21 2007-11-20 Zetetic Institute Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
TW200720649A (en) * 2005-08-26 2007-06-01 Electro Scient Ind Inc Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12551460B2 (en) 2017-12-05 2026-02-17 Pds Biotechnology Coporation Methods and compositions comprising cationic lipids for stimulating type 1 interferon genes
TWI767576B (zh) * 2020-02-21 2022-06-11 美商奈米創尼克影像公司 用於製造程序之系統、方法及媒介
US12346088B2 (en) 2020-02-21 2025-07-01 Nanotronics Imaging, Inc. Systems, methods, and media for manufacturing processes

Also Published As

Publication number Publication date
WO2013016399A3 (en) 2013-04-25
US20130030717A1 (en) 2013-01-31
TW201305556A (zh) 2013-02-01
CN103733020A (zh) 2014-04-16
JP2014526148A (ja) 2014-10-02
US9157876B2 (en) 2015-10-13
KR20140045991A (ko) 2014-04-17
WO2013016399A2 (en) 2013-01-31

Similar Documents

Publication Publication Date Title
TW201305556A (zh) 用於特徵化物件及監測製造製程之方法及設備
EP3679598B1 (en) Systems and methods for combining optical metrology with mass metrology
CN103155101B (zh) 改良器件产率的移送室测量方法
JP2013516063A5 (enExample)
TWI668776B (zh) 矽試料之碳濃度評估方法、矽晶圓製造步驟的評估方法、矽晶圓的製造方法、矽單結晶錠的製造方法、矽單結晶錠以及矽晶圓
Chen et al. Multifractal spectra of scanning electron microscope images of SnO2 thin films prepared by pulsed laser deposition
Tseng Picosecond laser micropatterning of graphene films for rapid heating chips
JP2014526148A5 (enExample)
Bi et al. Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films
US20150340250A1 (en) Wet etching nozzle, semiconductor manufacturing equipment including the same, and wet etching method using the same
Kenyon et al. Luminescence efficiency measurements of silicon nanoclusters
JP2010028011A (ja) エピタキシャル層の膜厚測定方法、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ製造工程管理方法
Ajward et al. Radiative recombination of trapped excitons in Alq 3 films: Importance of intermolecular interactions
Gartner et al. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films
US20150185170A1 (en) X-ray fluorescence analysis of thin-film coverage defects
KR102169017B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
TWI675196B (zh) 基板處理系統中粒子性能之量化系統及方法
JP2023042256A (ja) 基板処理装置および基板処理方法
JP2023042255A (ja) 基板処理装置および基板処理方法
Pyo et al. Laser-power dependence of poly-silicon crystallization using 355-nm nanosecond laser annealing
Hsieh et al. The Investigation of Oven Contamination and Corresponding Methodology
Lee et al. Laser ablation ICP-MS to determine Cu on a Si wafer prepared by ion sputtering
LONG Organic Light-Emitting Devices embedded with Silicon Quantum Dots: a preliminary study
US11362275B2 (en) Annealing processes for memory devices
Airaksinen Epitaxial layer characterization and metrology

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees