CN103733020A - 用于特征化对象并监视制造过程的方法与设备 - Google Patents
用于特征化对象并监视制造过程的方法与设备 Download PDFInfo
- Publication number
- CN103733020A CN103733020A CN201280037171.0A CN201280037171A CN103733020A CN 103733020 A CN103733020 A CN 103733020A CN 201280037171 A CN201280037171 A CN 201280037171A CN 103733020 A CN103733020 A CN 103733020A
- Authority
- CN
- China
- Prior art keywords
- composition
- measurement
- measurement point
- depth
- determining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161511197P | 2011-07-25 | 2011-07-25 | |
| US61/511,197 | 2011-07-25 | ||
| PCT/US2012/048090 WO2013016399A2 (en) | 2011-07-25 | 2012-07-25 | Method and apparatus for characterizing objects and monitoring manufacturing processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103733020A true CN103733020A (zh) | 2014-04-16 |
Family
ID=47597925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280037171.0A Pending CN103733020A (zh) | 2011-07-25 | 2012-07-25 | 用于特征化对象并监视制造过程的方法与设备 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9157876B2 (enExample) |
| JP (1) | JP2014526148A (enExample) |
| KR (1) | KR20140045991A (enExample) |
| CN (1) | CN103733020A (enExample) |
| TW (1) | TWI571633B (enExample) |
| WO (1) | WO2013016399A2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2532068B (en) | 2014-11-07 | 2017-05-31 | Thermo Fisher Scient (Ecublens) Sarl | Apparatus and method for controlling an atomic emission spectrometer |
| US11557048B2 (en) | 2015-11-16 | 2023-01-17 | Applied Materials, Inc. | Thickness measurement of substrate using color metrology |
| US10565701B2 (en) | 2015-11-16 | 2020-02-18 | Applied Materials, Inc. | Color imaging for CMP monitoring |
| EP3257160A1 (en) | 2016-04-19 | 2017-12-20 | Huawei Technologies Co., Ltd. | Concurrent segmentation using vector processing |
| EP3251216A1 (en) | 2016-04-19 | 2017-12-06 | Huawei Technologies Co., Ltd. | Vector processing for segmentation hash values calculation |
| JP2019060831A (ja) * | 2017-09-28 | 2019-04-18 | 株式会社島津製作所 | レーザ誘起分析装置、および、レーザ誘起分析方法 |
| AU2018378588A1 (en) | 2017-12-05 | 2020-06-25 | Pds Biotechnology Corporation | Methods and compositions comprising cationic lipids for stimulating type 1 interferon genes |
| US11100628B2 (en) | 2019-02-07 | 2021-08-24 | Applied Materials, Inc. | Thickness measurement of substrate using color metrology |
| JP2023515015A (ja) * | 2020-02-21 | 2023-04-12 | ナノトロニクス イメージング インコーポレイテッド | 製造プロセスのためのシステム、方法、及び媒体 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521525A (en) | 1994-04-15 | 1996-05-28 | University Of North Carolina | Method and apparatus for measuring the doping density profile of a semiconductor layer |
| US5719796A (en) | 1995-12-04 | 1998-02-17 | Advanced Micro Devices, Inc. | System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback |
| EP1909318A3 (en) | 1996-03-19 | 2009-12-09 | Hitachi, Ltd. | Process management system |
| JP3260663B2 (ja) * | 1997-07-23 | 2002-02-25 | 沖電気工業株式会社 | ホール内表面の組成分布検出方法 |
| US6055460A (en) * | 1997-08-06 | 2000-04-25 | Advanced Micro Devices, Inc. | Semiconductor process compensation utilizing non-uniform ion implantation methodology |
| US6274449B1 (en) | 1997-12-23 | 2001-08-14 | Texas Instruments Incorporated | Method of pocket implant modeling for a CMOS process |
| US6311096B1 (en) | 1999-04-01 | 2001-10-30 | Texas Instruments Incorporated | Design of microelectronic process flows for manufacturability and performance |
| US6878900B2 (en) | 2000-01-27 | 2005-04-12 | National Research Council Of Canada | Method and apparatus for repair of defects in materials with short laser pulses |
| US6622059B1 (en) | 2000-04-13 | 2003-09-16 | Advanced Micro Devices, Inc. | Automated process monitoring and analysis system for semiconductor processing |
| AU2001281243A1 (en) * | 2000-08-11 | 2002-02-25 | Sensys Instruments Corporation | Device and method for optical inspection of semiconductor wafer |
| US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| WO2002025708A2 (en) * | 2000-09-20 | 2002-03-28 | Kla-Tencor-Inc. | Methods and systems for semiconductor fabrication processes |
| US6694284B1 (en) * | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
| US6326220B1 (en) | 2000-11-11 | 2001-12-04 | Macronix International Co., Ltd. | Method for determining near-surface doping concentration |
| US6638778B1 (en) | 2002-02-25 | 2003-10-28 | Advanced Micro Devices, Inc. | Method for determining, tracking and/or controlling processing based upon silicon characteristics |
| US7074270B2 (en) | 2003-04-02 | 2006-07-11 | Seiko Epson Corporation | Method for predicting the behavior of dopant and defect components |
| US7248367B2 (en) * | 2003-06-10 | 2007-07-24 | Therma-Wave, Inc. | Characterization of ultra shallow junctions in semiconductor wafers |
| US7298496B2 (en) * | 2004-05-21 | 2007-11-20 | Zetetic Institute | Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry |
| US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
| US7379924B1 (en) | 2004-12-01 | 2008-05-27 | Advanced Micro Devices, Inc. | Quantifying and predicting the impact of line edge roughness on device reliability and performance |
| US7403023B2 (en) | 2005-03-14 | 2008-07-22 | Qc Solutions, Inc. | Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered. |
| US7411188B2 (en) | 2005-07-11 | 2008-08-12 | Revera Incorporated | Method and system for non-destructive distribution profiling of an element in a film |
| JP2007036068A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 不良原因特定システム、不良原因特定方法及び半導体装置の製造方法 |
| JP2007059721A (ja) * | 2005-08-25 | 2007-03-08 | Matsushita Electric Works Ltd | 半導体製造方法及び半導体製造システム |
| US7297972B2 (en) * | 2005-08-26 | 2007-11-20 | Electro Scientific Industries, Inc. | Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target |
| TW200830443A (en) | 2006-07-27 | 2008-07-16 | Qc Solutions Inc | Probes and methods for semiconductor wafer analysis |
| US7512499B1 (en) | 2006-12-20 | 2009-03-31 | National Semiconductor Corporation | System and method for determining substrate doping density in metal oxide semiconductor devices |
| US8396582B2 (en) | 2008-03-08 | 2013-03-12 | Tokyo Electron Limited | Method and apparatus for self-learning and self-improving a semiconductor manufacturing tool |
| US8877524B2 (en) | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
| DE102008021556B4 (de) | 2008-04-30 | 2019-06-06 | Advanced Micro Devices, Inc. | Verfahren und System für zweistufige Vorhersage einer Qualitätsverteilung von Halbleiterbauelementen |
| DE102008021557B4 (de) | 2008-04-30 | 2011-07-28 | Globalfoundries Inc. | Verfahren zum Überwachen einer vorhergesagten Produktqualitätsverteilung |
| EP2331946B1 (en) | 2008-08-29 | 2018-12-26 | Carl Zeiss Microscopy, LLC | Ion beam stabilization |
| US8204721B2 (en) | 2009-06-29 | 2012-06-19 | Sentinel Ic Technologies, Inc. | Apparatus and method for emulation of process variation induced in split process semiconductor wafers |
| US8486726B2 (en) | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
| KR20110106709A (ko) | 2010-03-23 | 2011-09-29 | 삼성전자주식회사 | 레이아웃 검사 방법 |
| JP2011215749A (ja) | 2010-03-31 | 2011-10-27 | Renesas Electronics Corp | 半導体装置設計支援方法、半導体装置設計支援プログラム、及び半導体装置設計支援装置 |
| US20110313748A1 (en) | 2010-06-16 | 2011-12-22 | Li Zhanming | Method of simulation and design of a semiconductor device |
-
2012
- 2012-07-25 KR KR1020147001944A patent/KR20140045991A/ko not_active Withdrawn
- 2012-07-25 TW TW101126759A patent/TWI571633B/zh not_active IP Right Cessation
- 2012-07-25 JP JP2014522962A patent/JP2014526148A/ja active Pending
- 2012-07-25 WO PCT/US2012/048090 patent/WO2013016399A2/en not_active Ceased
- 2012-07-25 US US13/557,545 patent/US9157876B2/en not_active Expired - Fee Related
- 2012-07-25 CN CN201280037171.0A patent/CN103733020A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013016399A3 (en) | 2013-04-25 |
| TWI571633B (zh) | 2017-02-21 |
| US20130030717A1 (en) | 2013-01-31 |
| TW201305556A (zh) | 2013-02-01 |
| JP2014526148A (ja) | 2014-10-02 |
| US9157876B2 (en) | 2015-10-13 |
| KR20140045991A (ko) | 2014-04-17 |
| WO2013016399A2 (en) | 2013-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI571633B (zh) | 用於特徵化物件及監測製造製程之方法及設備 | |
| CN105074883B (zh) | 成膜方法和成膜系统 | |
| US10679828B2 (en) | Method of measuring gas introducing hole provided in electrode for plasma etching device, electrode, electrode regeneration method, regenerated electrode, plasma etching device, and gas introducing hole state distribution diagram and display method for same | |
| JP2021193752A (ja) | 方法およびエッチングシステム | |
| KR102371535B1 (ko) | 서셉터 온도 확인을 위한 장치 및 사용 방법들 | |
| US12340992B2 (en) | Detection and location of anomalous plasma events in fabrication chambers | |
| WO2016070036A1 (en) | A system and method for performing a wet etching process | |
| US9266192B2 (en) | Method and apparatus for processing workpieces | |
| CN111564398A (zh) | 半导体处理装置及处理方法 | |
| JP2014526148A5 (enExample) | ||
| CN103890925B (zh) | 经由激光衍射测量3d半导体结构的温度的设备及方法 | |
| US20150087082A1 (en) | Selective heating during semiconductor device processing to compensate for substrate uniformity variations | |
| CN104091901A (zh) | 一种oled制备方法 | |
| US20150340250A1 (en) | Wet etching nozzle, semiconductor manufacturing equipment including the same, and wet etching method using the same | |
| US20100068408A1 (en) | Methods for electron-beam induced deposition of material inside energetic-beam microscopes | |
| US10971411B2 (en) | Hybrid corrective processing system and method | |
| US9297773B2 (en) | X-ray fluorescence analysis of thin-film coverage defects | |
| CN105097582B (zh) | 一种监测晶圆固定器应力的方法 | |
| TWI675196B (zh) | 基板處理系統中粒子性能之量化系統及方法 | |
| EP4167272A1 (en) | Plasma processing gas, plasma processing method, and plasma processing apparatus | |
| TW202210651A (zh) | 產生低溫基板保護層 | |
| US20250316504A1 (en) | Cleaning device for semiconductor and flat panel display processing tools | |
| CN103805941A (zh) | 薄膜沉积设备以及用其沉积薄膜的方法 | |
| US11362275B2 (en) | Annealing processes for memory devices | |
| Lin et al. | Effect of a cooling step treatment on a high-voltage GaN LED during ICP dry etching |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140416 |