JP2014526148A - 対象物を特徴付けて製造プロセスをモニタリングするための方法及び装置 - Google Patents

対象物を特徴付けて製造プロセスをモニタリングするための方法及び装置 Download PDF

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JP2014526148A
JP2014526148A JP2014522962A JP2014522962A JP2014526148A JP 2014526148 A JP2014526148 A JP 2014526148A JP 2014522962 A JP2014522962 A JP 2014522962A JP 2014522962 A JP2014522962 A JP 2014522962A JP 2014526148 A JP2014526148 A JP 2014526148A
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JP2014526148A5 (enExample
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ハルダーマン，ジョナサン，ディ
オコナー，キアラン・ジョン，パトリック
ウィルキンス，ジェイ
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エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
JP2014522962A 2011-07-25 2012-07-25 対象物を特徴付けて製造プロセスをモニタリングするための方法及び装置 Pending JP2014526148A (ja)

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US201161511197P 2011-07-25 2011-07-25
US61/511,197 2011-07-25
PCT/US2012/048090 WO2013016399A2 (en) 2011-07-25 2012-07-25 Method and apparatus for characterizing objects and monitoring manufacturing processes

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JP2014526148A true JP2014526148A (ja) 2014-10-02
JP2014526148A5 JP2014526148A5 (enExample) 2015-09-10

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US (1) US9157876B2 (enExample)
JP (1) JP2014526148A (enExample)
KR (1) KR20140045991A (enExample)
CN (1) CN103733020A (enExample)
TW (1) TWI571633B (enExample)
WO (1) WO2013016399A2 (enExample)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
JP2017534058A (ja) * 2014-11-07 2017-11-16 サーモ フィッシャー サイエンティフィック （エキュブラン） エスアーエールエル 原子発光分光計を制御するための機器及び方法
JP2019060831A (ja) * 2017-09-28 2019-04-18 株式会社島津製作所 レーザ誘起分析装置、および、レーザ誘起分析方法

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US10565701B2 (en) 2015-11-16 2020-02-18 Applied Materials, Inc. Color imaging for CMP monitoring
EP3257160A1 (en) 2016-04-19 2017-12-20 Huawei Technologies Co., Ltd. Concurrent segmentation using vector processing
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AU2018378588A1 (en) 2017-12-05 2020-06-25 Pds Biotechnology Corporation Methods and compositions comprising cationic lipids for stimulating type 1 interferon genes
US11100628B2 (en) 2019-02-07 2021-08-24 Applied Materials, Inc. Thickness measurement of substrate using color metrology
JP2023515015A (ja) * 2020-02-21 2023-04-12 ナノトロニクス イメージング インコーポレイテッド 製造プロセスのためのシステム、方法、及び媒体

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JP2004513509A (ja) * 2000-09-20 2004-04-30 ケーエルエー・テンコール・テクノロジーズ・コーポレーション 半導体製造プロセスのための方法とシステム
US20040251927A1 (en) * 2003-06-10 2004-12-16 Alex Salnik Characterization of ultra shallow junctions in semiconductor wafers
JP2007036068A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 不良原因特定システム、不良原因特定方法及び半導体装置の製造方法
JP2007059721A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Works Ltd 半導体製造方法及び半導体製造システム

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017534058A (ja) * 2014-11-07 2017-11-16 サーモ フィッシャー サイエンティフィック （エキュブラン） エスアーエールエル 原子発光分光計を制御するための機器及び方法
JP2019060831A (ja) * 2017-09-28 2019-04-18 株式会社島津製作所 レーザ誘起分析装置、および、レーザ誘起分析方法

Also Published As

Publication number Publication date
WO2013016399A3 (en) 2013-04-25
TWI571633B (zh) 2017-02-21
US20130030717A1 (en) 2013-01-31
TW201305556A (zh) 2013-02-01
CN103733020A (zh) 2014-04-16
US9157876B2 (en) 2015-10-13
KR20140045991A (ko) 2014-04-17
WO2013016399A2 (en) 2013-01-31

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