TWI571525B - A crystalline laminated structure, and a semiconductor device - Google Patents
A crystalline laminated structure, and a semiconductor device Download PDFInfo
- Publication number
- TWI571525B TWI571525B TW104110315A TW104110315A TWI571525B TW I571525 B TWI571525 B TW I571525B TW 104110315 A TW104110315 A TW 104110315A TW 104110315 A TW104110315 A TW 104110315A TW I571525 B TWI571525 B TW I571525B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- crystalline
- oxide semiconductor
- crystalline oxide
- thin film
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P14/24—
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- H10P14/265—
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- H10P14/2921—
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- H10P14/2925—
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- H10P14/2926—
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- H10P14/3238—
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- H10P14/3434—
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- H10P14/3438—
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- H10P14/3442—
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- H10P14/3446—
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- H10P14/3451—
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- H10P14/3458—
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- H10P14/22—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical & Material Sciences (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014072780 | 2014-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201536945A TW201536945A (zh) | 2015-10-01 |
| TWI571525B true TWI571525B (zh) | 2017-02-21 |
Family
ID=52146229
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104110315A TWI571525B (zh) | 2014-03-31 | 2015-03-30 | A crystalline laminated structure, and a semiconductor device |
| TW107112140A TWI665327B (zh) | 2014-03-31 | 2015-03-30 | 結晶性氧化物半導體薄膜及半導體裝置 |
| TW105143387A TWI625413B (zh) | 2014-03-31 | 2015-03-30 | 結晶性氧化物半導體薄膜 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107112140A TWI665327B (zh) | 2014-03-31 | 2015-03-30 | 結晶性氧化物半導體薄膜及半導體裝置 |
| TW105143387A TWI625413B (zh) | 2014-03-31 | 2015-03-30 | 結晶性氧化物半導體薄膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10090388B2 (enExample) |
| EP (1) | EP2933825B1 (enExample) |
| JP (2) | JP6379369B2 (enExample) |
| CN (4) | CN110176493A (enExample) |
| TW (3) | TWI571525B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
| JP7166522B2 (ja) * | 2017-08-21 | 2022-11-08 | 株式会社Flosfia | 結晶膜の製造方法 |
| TWI831755B (zh) * | 2017-11-15 | 2024-02-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | ｐ型氧化物半導體膜及其形成方法 |
| KR102415439B1 (ko) * | 2018-08-01 | 2022-06-30 | 이데미쓰 고산 가부시키가이샤 | 결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기 |
| JP7115688B2 (ja) * | 2019-01-25 | 2022-08-09 | 株式会社デンソー | 成膜装置及び半導体装置の製造方法 |
| JP7045014B2 (ja) * | 2019-08-28 | 2022-03-31 | 信越化学工業株式会社 | 積層構造体の製造方法 |
| JP7306640B2 (ja) * | 2019-08-28 | 2023-07-11 | 信越化学工業株式会社 | 結晶性酸化物膜 |
| JP7290740B2 (ja) * | 2019-09-30 | 2023-06-13 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| JP6994694B2 (ja) * | 2020-02-27 | 2022-01-14 | 信越化学工業株式会社 | 成膜用霧化装置及びこれを用いた成膜装置 |
| JP7200205B2 (ja) | 2020-12-15 | 2023-01-06 | 信越化学工業株式会社 | 成膜方法 |
| TW202242209A (zh) | 2021-04-28 | 2022-11-01 | 日商信越化學工業股份有限公司 | 積層結構體、半導體裝置以及積層結構體的製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013027480A (ja) * | 2011-07-27 | 2013-02-07 | Aisin Seiki Co Ltd | 暖房椅子 |
| WO2013035844A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ｇａ2Ｏ3系半導体素子 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000188257A (ja) * | 1998-12-22 | 2000-07-04 | Sharp Corp | 結晶性シリコン系半導体薄膜の製造方法 |
| JP2000232222A (ja) * | 1999-02-10 | 2000-08-22 | Nec Corp | 半導体装置の製造方法 |
| US6573161B1 (en) * | 1999-03-05 | 2003-06-03 | Seiko Epson Corporation | Thin film semiconductor device fabrication process |
| US20070287221A1 (en) * | 2006-06-12 | 2007-12-13 | Xerox Corporation | Fabrication process for crystalline zinc oxide semiconductor layer |
| US7476615B2 (en) * | 2006-11-01 | 2009-01-13 | Intel Corporation | Deposition process for iodine-doped ruthenium barrier layers |
| JP2009091212A (ja) * | 2007-10-10 | 2009-04-30 | Nippon Light Metal Co Ltd | 酸化ガリウム単結晶基板及びその製造方法 |
| JP2010080719A (ja) * | 2008-09-26 | 2010-04-08 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
| KR101811203B1 (ko) | 2009-12-25 | 2017-12-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제작하기 위한 방법 |
| US8410474B2 (en) * | 2010-01-21 | 2013-04-02 | Hitachi, Ltd. | Graphene grown substrate and electronic/photonic integrated circuits using same |
| US10032239B2 (en) * | 2010-06-10 | 2018-07-24 | United Parcel Service Of America, Inc. | Enhanced payments for shipping |
| US8987728B2 (en) * | 2011-03-25 | 2015-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| WO2012173108A1 (ja) * | 2011-06-15 | 2012-12-20 | 住友電気工業株式会社 | 導電性酸化物およびその製造方法ならびに酸化物半導体膜 |
| JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| US20140217470A1 (en) | 2011-09-08 | 2014-08-07 | Tamura Corporation | Ga2O3 SEMICONDUCTOR ELEMENT |
| JP2013191824A (ja) * | 2012-02-15 | 2013-09-26 | Sharp Corp | 酸化物半導体及びこれを含む半導体接合素子 |
| JP2013201211A (ja) | 2012-03-23 | 2013-10-03 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 |
| JP5397794B1 (ja) | 2013-06-04 | 2014-01-22 | Ｒｏｃａ株式会社 | 酸化物結晶薄膜の製造方法 |
-
2014
- 2014-12-19 EP EP14199093.7A patent/EP2933825B1/en active Active
- 2014-12-19 US US14/578,017 patent/US10090388B2/en active Active
-
2015
- 2015-03-30 CN CN201910497081.3A patent/CN110176493A/zh active Pending
- 2015-03-30 JP JP2015070469A patent/JP6379369B2/ja active Active
- 2015-03-30 TW TW104110315A patent/TWI571525B/zh active
- 2015-03-30 TW TW107112140A patent/TWI665327B/zh active
- 2015-03-30 CN CN201510145934.9A patent/CN104952927B/zh active Active
- 2015-03-30 CN CN201910634597.8A patent/CN110310996B/zh active Active
- 2015-03-30 CN CN201910634324.3A patent/CN110299414A/zh active Pending
- 2015-03-30 TW TW105143387A patent/TWI625413B/zh active
-
2018
- 2018-07-03 JP JP2018126539A patent/JP6539921B2/ja active Active
- 2018-08-30 US US16/118,402 patent/US11038026B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013027480A (ja) * | 2011-07-27 | 2013-02-07 | Aisin Seiki Co Ltd | 暖房椅子 |
| WO2013035844A1 (ja) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Ｇａ2Ｏ3系半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018203614A (ja) | 2018-12-27 |
| CN110310996A (zh) | 2019-10-08 |
| CN110310996B (zh) | 2020-09-08 |
| CN110176493A (zh) | 2019-08-27 |
| JP2015199649A (ja) | 2015-11-12 |
| US20150279944A1 (en) | 2015-10-01 |
| CN104952927B (zh) | 2019-08-13 |
| TW201536945A (zh) | 2015-10-01 |
| US20190013384A1 (en) | 2019-01-10 |
| JP6539921B2 (ja) | 2019-07-10 |
| TW201829824A (zh) | 2018-08-16 |
| US10090388B2 (en) | 2018-10-02 |
| TWI665327B (zh) | 2019-07-11 |
| US11038026B2 (en) | 2021-06-15 |
| CN104952927A (zh) | 2015-09-30 |
| JP6379369B2 (ja) | 2018-08-29 |
| CN110299414A (zh) | 2019-10-01 |
| TWI625413B (zh) | 2018-06-01 |
| EP2933825A1 (en) | 2015-10-21 |
| TW201713790A (zh) | 2017-04-16 |
| EP2933825B1 (en) | 2017-07-05 |
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