TWI546424B - A crystalline laminated structure, and a semiconductor device - Google Patents
A crystalline laminated structure, and a semiconductor device Download PDFInfo
- Publication number
- TWI546424B TWI546424B TW104110316A TW104110316A TWI546424B TW I546424 B TWI546424 B TW I546424B TW 104110316 A TW104110316 A TW 104110316A TW 104110316 A TW104110316 A TW 104110316A TW I546424 B TWI546424 B TW I546424B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- crystalline
- oxide film
- crystalline oxide
- laminated structure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 31
- 238000000137 annealing Methods 0.000 claims description 30
- 239000010431 corundum Substances 0.000 claims description 19
- 229910052593 corundum Inorganic materials 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 14
- 239000010419 fine particle Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 137
- 229910001195 gallium oxide Inorganic materials 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000000523 sample Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 239000003595 mist Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 150000002259 gallium compounds Chemical class 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 150000002472 indium compounds Chemical class 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- -1 aluminum compound Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
本發明涉及結晶性層疊結構體以及半導體裝置。
在被成膜樣品上形成結晶性高的氧化鎵系薄膜的方法有:使用霧CVD(Mist CVD)法等水微粒(water fine particles)的成膜方法(專利文獻1:日本專利 特開2013-28480號公報)。在該方法中,將乙醯丙酮鎵(Gallium acetylacetonate)等鎵化合物溶解於鹽酸等酸中而製成原料溶液。將該原料溶液微粒化,由此形成原料微粒,將該原料微粒以載氣向被成膜樣品的成膜面供給,使原料霧(Mist)反應而在成膜面上形成薄膜,由此在被成膜樣品上形成結晶性高的氧化鎵系薄膜。
為了使用氧化鎵系薄膜而形成半導體設備,控制氧化鎵系薄膜的導電性是必要的。專利文獻1及非專利文獻1[Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition(Japanese Journal of Applied Physics 51(2012)070203)]中,公開了一種向α-氧化鎵薄膜摻入雜質的技術(Technologies for doping)。
根據專利文獻1及非專利文獻1的方法,可以形成導電性出色的α-氧化鎵薄膜,不過本發明人進一步研究時發現,以這些文獻所述的方法形成厚300nm左右的α-氧化鎵薄膜,剛剛成膜之後導電性出色,不過進行500℃下的加熱步驟之後再次評估導電性時,α-氧化鎵薄膜呈高電阻化,失去半導體特性、導電性。在半導體設備的製造步驟中,成膜步驟之後,通常具有必要的500℃以上的加熱步驟,在這樣的溫度區域下加熱,由此導致高電阻化,這是嚴重的問題。
通常,半導體材料的導電性的控制主要著眼於:藉由控制摻雜劑(Dopant)濃度,和摻雜(Doping)後的活性化退火(Activation annealing),從而提高活化率。按照該原則,以所述專利文獻及公知文獻提供的方法向α-氧化鎵薄膜進行摻雜(Doping)之後,為了活性化退火及Ohmic退火(Ohmic annealing)而對半導體進行加熱時,遇到的課題是:呈現高電阻化(以電阻值值計算,為2到4個數量級)。
該課題的原因有,通常,加熱使得污染(Contamination)元素在結晶內移動,阻礙電子移動的位置。
從該觀點出發,減少原來不應該存在的污染元素後,即使還殘留微量
污染元素,找到實現電非活性狀態(Electrically inactive state)的最適合的退火條件,採用退火溫度低溫化,退火曲線(Annealing profile)最優化,控制退火環境等各種解決方法,不過高電阻化的問題沒有得到解決。
本發明鑒於上述情況,於一實施例中,目的在於提供一種改善前述課題的結晶性層疊結構體。
本發明鑒於上述情況,於一實施例中,目的是提供一種導電性出色的結晶性層疊結構體,該結晶性層疊結構體中,具有剛玉結構的結晶性氧化物薄膜即使在退火(加熱)步驟後也沒有高電阻化。
本發明人為了達成上述目而進行認真研究後發現,對於具有膜厚1μm以上的剛玉結構之結晶性氧化物薄膜,即使進行退火處理,電阻率不上升,而是降低,進一步進行反復研究從完成本發明。
本發明提供一種結晶性層疊結構體,其特徵在於:具備底層基板(base substrate),和在該底層基板上直接或介由(隔著)其他層設置於該底層基板上的具有剛玉結構之結晶性氧化物薄膜,所述結晶性氧化物薄膜的膜厚是1μm以上,所述結晶性氧化物薄膜的電阻率(electrical resistivity)為80mΩcm以下。
就本發明的結晶性層疊結構體而言,具有剛玉結構的結晶性氧化物薄
膜即使在退火處理後,也沒有高電阻化,導電性出色,在半導體裝置等中是有用的。
1‧‧‧底層基板
19‧‧‧CVD裝置
20‧‧‧被成膜樣品
21‧‧‧樣品台
22‧‧‧載氣源
23‧‧‧流量調節閥
24‧‧‧原料溶液
24‧‧‧霧發生源
25‧‧‧容器
25a‧‧‧水
26‧‧‧超聲振盪子
27‧‧‧成膜室
28‧‧‧加熱器
3‧‧‧結晶性氧化物薄膜
3b‧‧‧導電性薄膜
5‧‧‧柵極絕緣膜
7‧‧‧柵電極
9‧‧‧源極和漏極電極
【圖1】表示本發明的一個實施方式的結晶性層疊結構體的構成例。
【圖2】是本發明的實施例中使用的霧CVD裝置的構成圖。
【圖3】是本發明的實施例中的,表示結晶性氧化物薄膜厚度和電阻值關係的圖表。
【圖4】表示試驗例中的TEM像。
【圖5】表示試驗例中的TEM像。
本發明的結晶性層疊結構體,具備底層基板,和直接或介由其他層設置於該底層基板上的具有剛玉結構之結晶性氧化物薄膜,所述結晶性氧化物薄膜的膜厚是1μm以上,所述結晶性氧化物薄膜的電阻率為80mΩcm以下。所謂「結晶性層疊結構體」,是含有一層以上的結晶層的結構體,也可以含有結晶層之外的層(例如:無定形層(Amorphous layer))。並且結晶層優選為單晶層,也可以是多結晶層。所述結晶性氧化物薄膜可以是成膜後進行退火處理的,藉由退火處理,在結晶性薄膜和歐姆電極(Ohmic electrode)之間也可以形成歐姆電極氧化的金屬氧化物薄膜。歐姆電極有例如銦或鈦
等。
<底層基板>
就底層基板而言,如果成為上述結晶性氧化物薄膜的支持體的話就沒有特別限定,優選為具有剛玉結構的基板。具有剛玉結構的基板有例如藍寶石基板(例如:c面藍寶石基板(c-plane sapphire substrate)),或α型氧化鎵基板等。另外,不具有剛玉結構的底層基板有例如具有六方晶結構(hexagonal structure)的基板(例如:6H-SiC基板,ZnO基板,GaN基板)等。優選為在具有六方晶結構的基板上,直接或介由其他層(例如:緩衝層)形成結晶性氧化物薄膜。底層基板的厚度在本發明中沒有特別限定,優選為50~2000μm,更優選為200~800μm。
<結晶性氧化物薄膜>
就結晶性氧化物薄膜而言,如果是具有剛玉結構的結晶性氧化物的膜的話就沒有特別限定,因為要成為半導體特性好的,優選為:含有具有剛玉結構的氧化物半導體作為主要成分。另外就所述結晶性氧化物薄膜而言,磁性金屬(例如Fe,Co,Ni等)不作為含有的主要成分而非磁性金屬(例如Ga,Ti,V,In等)作為主要成分含有,其半導體特性更加出色,是優選的。並且,所述結晶性氧化物薄膜,優選為單晶,但也可以為多結晶。就所述結晶性氧化物薄膜的組成而言,優選為所述薄膜中含有的金屬元素中的鎵,銦,鋁及鐵共計的原子比(相對於所有金屬元素)為0.5以上,更加優選為金屬元素中鎵的原子比為0.5以上。該優選的原子比具體而言是例
如0.5,0.6,0.7,0.8,0.9,1,也可以在上述例舉的任意2個數值間的範圍內。
原子比為所述優選的原子比的話,可以進行更適當的退火處理而使電阻率降低。特別是,金屬元素中的鎵的原子比為0.5以上時,所述結晶性氧化物薄膜的膜厚不到1μm時,該薄膜的退火處理導致的高電阻化顯著,所述結晶性氧化物薄膜膜厚為1μm以上時,該薄膜的退火處理使得電阻率變得明顯呈低電阻化。更具體的例子有,所述結晶性氧化物薄膜的電阻率為80mΩcm以下,更加優選為50mΩcm以下,最優選為低電阻化至25mΩcm以下。
另外,就結晶性氧化物薄膜的組成而言,例如優選為InXAlYGaZFeVO3(0X2.5,0Y2.5,0Z2.5,0V2.5,X+Y+Z+V=1.5~2.5),1Z。更加優選為X,Y,Z以及V,分別具體為例如0,0.01,0.05,0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8,0.9,1,1.1,1.2,1.3,1.4,1.5,1.6,1.7,1.8,1.9,2,2.1,2.2,2.3,2.4,2.5。另外X+Y+Z+V優選為,具體而言例如是1.5,1.6,1.7,1.8,1.9,2,2.1,2.2,2.3,2.4,2.5。另外所述X,Y,Z,V,以及X+Y+Z+V也可以分別在此例舉的任意2個數值的範圍內。另外上述一般式,表示具有剛玉結構的網格點上的原子組成,沒有表示為「X+Y+Z+V=2」,這也是明顯的,也可以含有非化學計量氧化物,也可以含有金屬不足氧化物(metal-deficient oxide),氧不足氧化物(oxygen-deficient oxide)。
結晶性氧化物薄膜,可以直接形成於底層基板上,也可以介由其他層而形成。其他層有例如其他組成的剛玉結構結晶薄膜、剛玉結構以外的結晶薄膜或無定形(amorphous)薄膜等。
就結晶性氧化物薄膜而言,在其至少一部分(更具體而言是厚度方向的一部分)摻入雜質也是可以的,也可以是單層結構,也可以是多層結構。為多層結構時,結晶性氧化物薄膜由例如絕緣性薄膜和導電性薄膜層疊而構成,不過本發明不受其限定。另外,由絕緣性薄膜和導電性薄膜層疊而構成多層結構時,絕緣性薄膜和導電性薄膜的組成,可以相同也可以相互不同。絕緣性薄膜和導電性薄膜的厚度比沒有特別限定,優選為(導電性薄膜的厚)/(絕緣性薄膜的厚)的比為0.001~100,更加優選為0.1~5。進一步優選的比具體而言例如是0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8,0.9,1,1.1,1.2,1.3,1.4,1.5,1.6,1.7,1.8,1.9,2,3,4,5,也可以是在此例舉的任意2個值間的範圍內。
導電性薄膜摻入賦予導電性的雜質也是可以的。就雜質的摻入濃度而言,根據對於導電性膜所要求的特性而適當的決定,例如為1E15/cm3~1E20/cm3。另外,對於摻入的雜質種類沒有特別限定,例如為由Ge,Sn,Si,Ti,Zr及Hf中的至少1種組成的摻雜劑等。就絕緣性薄膜而言,通常不需要摻入雜質,不過也可以在不呈現導電性的程度內摻入雜質。
結晶性氧化物薄膜的厚度是1μm以上。形成的結晶性氧化物薄膜通常為300nm左右的厚度,不過形成這樣的厚度時,進行加熱步驟時產生的導電性薄膜高電阻化的問題不能解決。在本發明中,形成的結晶性氧化物薄膜厚為1μm以上的話,進行加熱步驟時的導電性薄膜高電阻化可以得到抑制。結晶性氧化物薄膜的厚度的上限沒有特別限定,不過優選為100μm,更優選為50μm,最優為選20μm。最合適的結晶性氧化物薄膜的厚度具體而言例如是1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20μm,也可以是在此例舉的任意2個值間的範圍內。在這樣的膜厚下,可以進行更合適的退火處理從而降低電阻率。
在本發明中,將原料溶液微粒化而生成原料微粒,將該原料微粒以載氣向成膜室供給,在配置於所述成膜室內的底層基板上形成具有剛玉結構的結晶性氧化物薄膜時,所述結晶性氧化物薄膜被形成為1μm以上,之後藉由退火處理,所述結晶性氧化物薄膜的電阻率成為80mΩcm以下,可以製造本發明的結晶性層疊結構體。
對於結晶性氧化物薄膜的形成方法沒有特別限定,可以是將例如鎵化合物,銦化合物,鋁化合物以及鐵化合物,對應於結晶性氧化物薄膜的組成而進行組合,將得到的組合原料化合物進行酸化反應,從而可以形成。由此,在底層基板上可以從底層基板側結晶生長出結晶性氧化物薄膜。鎵化合物以及銦化合物也可以是:將鎵金屬或銦金屬作為起始材料在剛要成膜之前變為鎵化合物及銦化合物。鎵化合物,銦化合物,鋁化合物以及鐵
化合物有例如:各個金屬的有機金屬絡合物(例如:乙醯丙酮(Acetylacetonate)絡合物)或鹵化物(氟化,氯化,溴化或碘化物)。摻雜劑原料有例如:摻入的雜質之金屬單體或化合物(例如鹵化物,氧化物)等。為了穩定地形成厚膜,將異常粒抑制劑Br或I導入薄膜中的話,異常粒成長導致的表面粗糙度的惡化可以被抑制。為了控制導電性考慮Ge,Sn,Si,Ti,Zr,Hf等n型摻雜劑,不過不受其限定。導入異常粒抑制劑Br或I的10倍以上的n型摻雜劑,使得載體密度(Carrier density)容易控制。另外,將異常粒抑制劑的Br或I作為n型摻雜劑可以控制導電性。
藉由使用所述異常粒抑制劑,可以使所述結晶性氧化物薄膜表面粗糙度(Ra)成為0.1μm以下,可以進一步提高半導體特性。另外表面粗糙度(Ra)是根據JIS B0601測得的算術平均粗糙度。
就所述結晶性氧化物薄膜而言,X射線的半值寬度沒有限定。特別是,相對於形成厚度不到1μm的情況,X射線半值寬度不一定被改善也是可以的。即,所述結晶性薄膜的X射線半值寬度即使不改善藉由退火處理也可以達到低電阻化。
更具體而言,就結晶性氧化物薄膜而言,從溶解有原料化合物的原料溶液生成原料微粒,將該原料微粒向成膜室供應,在所述成膜室內使所述原料化合物反應,由此可以得以形成。原料溶液的溶劑優選為水,過氧化氫水(hydrogen peroxide water),有機溶劑。如果向薄膜摻雜雜質時,在摻雜劑原料的存在下,使上述原料化合物進行氧化反應即可。摻雜劑原料優選為包含於原料溶液中,且與原料化合物一起被微粒化。
另外藉由上述方法,所述結晶性氧化物薄膜的膜厚可以藉由調節成膜時間而成為1μm以上。
本發明中,電阻率可以藉由退火處理達到80mΩcm以下。在本發明中,電阻率(mΩcm)是按照4探針法(JIS H 0602:以單晶矽及矽晶片的4探針法進行的電阻率測量方法),採用4探針測量儀測量。在本發明中,就退火處理的溫度而言,如果電阻率可以為80mΩcm以下的話,就沒有特別限定,優選600℃以下,更加優選為550℃,最優選為500℃以下。藉由這樣優選的溫度下進行退火處理,可以更適當地降低上述結晶性氧化物薄膜的電阻率。就退火處理的處理時間而言,如果不阻礙本發明的目的就沒有特別限定,不過優選為10秒~10小時,更加優選為10秒~1小時。
<結晶性層疊結構體的構成例子>
本實施方式的結晶性層疊結構體及使用它的半導體裝置的合適的例子如圖1所示。在圖1的例子中,底層基板1上形成結晶性氧化物薄膜3。就結晶性氧化物薄膜3而言,從底層基板1側開始按順序層積絕緣性薄膜3a和導電性薄膜3b而被構成。在導電性薄膜3b上形成柵極絕緣膜(Gate insulator film)5。在柵極絕緣膜5上形成柵電極(Gate electrode)7。並且在導電性薄膜3b上,夾住柵電極7,形成源極和漏極電極9(Source and drain electrodes)。以這樣的構成,藉由施加於柵電極7的柵極電壓可以控制形成於導電性薄膜3b的耗盡層(Depletion layer),電晶體工作(FET設備)成為可能。
使用本實施方式的結晶性層疊結構體所形成的半導體裝置有例如MIS或HEMT等電晶體或TFT、使用半導體-金屬連接的肖特基勢壘二極體(Schottky barrier diode)、與其他P層組合的PN或PIN二極體、發受光元件(Light emitting and receiving element)。
【實施例】
以下說明本發明的實施例。以下的實施例中,根據霧CVD法形成摻入雜質的結晶性氧化物薄膜,不過本發明不受這些實施例的限定。
1.CVD裝置
首先以圖2說明本實施例中使用的CVD裝置19。CVD裝置19具備:安置有底層基板等被成膜樣品20的樣品台21、供給載氣的載氣源22、對於從載氣源22送出的調節載氣流量進行調節的流量調節閥23、收納原料溶液24a的霧發生源24、容納水25a的容器25、安裝於容器25底面的超聲振盪子26、由內徑40mm的石英管組成的成膜室27、以及設置於膜室27周邊的加熱器28。樣品台21由石英組成,安置被成膜樣品20的面從水平面開始傾斜。成膜室27和樣品台21均由石英制得,由此抑制了:形成於被成膜樣品20上的薄膜內混入裝置帶來的雜質。
2.原料溶液的製造
<條件1>
調製溴化鎵和氧化鍺水溶液,使得鍺相對於鎵的原子比為1:0.05。這時為了促進溶解氧化鍺,含有體積比為10%的48%溴化氫溶液。
<條件2>
調製水溶液,其中溴化鎵、溴化錫的物質的量之比為1:0.01。這時為了溶解促進,含有體積比為10%的48%溴化氫溶液。
條件1~2的任意1項中,溴化鎵濃度為1.0×10-2mol/L。在霧發生源24內收容有該原料溶液24a。
3.成膜準備
接著,作為被成膜樣品20,邊長為10mm的正方形且厚600μm的c面藍寶石基板被設置於樣品台21上,使加熱器28工作,使成膜室27內的溫度上升到500℃。接著,開啟流量調節閥23,從載氣源22向成膜室27內供給載氣,成膜室27的氣體環境被載氣充分置換後,調節載氣流量為5L/min。載氣用的是氧氣。
4.薄膜形成
接著,使超聲振盪子26以2.4MHz的頻率振盪,該振盪通過水25a傳播到原料溶液24a,由此使原料溶液24a微粒化而生成原料微粒。該原料微粒由載氣被導入成膜室27內,在成膜室27內反應,在被成膜樣品20的成膜面中的CVD反應使得薄膜形成於被成膜樣品20上。通過調節成膜時間控制膜厚。
5.評估
對於以條件1及2形成的薄膜的相進行鑒定。該鑒定使用薄膜用XRD衍射裝置,以從15度到95度的角度進行2θ/ω掃描。使用CuKα線進行檢測。該結果是:形成的薄膜是具有剛玉結構的α-氧化鎵。
將直徑0.5mm的銦電極按照1mm的端子間距離進行壓接(pressure-bonded)後,在氮氣環境下進行500℃下20分鐘的退火處理。退火後進行XRD測量,確認結果如下:不發生相變,維持α-氧化鎵的結晶結構。
另外本實施例的薄膜的膜厚以干涉式膜厚計進行測量。
圖3表示:以上述條件1形成的α-氧化鎵的退火前後的電阻值的變化。對於專利文獻1或非專利文獻1中公開的膜厚不超過0.3μm的α-氧化鎵薄膜進行退火處理時,觀察到:相對於電阻值上升,1μm膜厚的α-氧化鎵薄膜中電阻值急劇減少。
另外,對於以條件2製造的α-氧化鎵,在退火前後的電阻值的變化也進行評估,結果如表1所示。如表1所示,1μm以上的膜厚的α-氧化鎵中摻雜劑為Ge、Sn的任意一種時,沒有觀察到高電阻化。
【表1】
在具有β-gallia(β-gallia-structured)結構的底層基板上,以與條件1相同的條件形成具有0.3μm以及1μm的β-gallia結構的β-氧化鎵之後,在氮氣環境以及500℃下進行20分鐘退火處理,得到的樣品與上述進行α-氧化鎵薄膜進行比較。結果如表2所示。就β-氧化鎵而言,即使厚度為0.3μm時也不產生高電阻化,然而就α-氧化鎵而言,厚度為0.3μm時產生高電阻化。其結果暗示:導電性薄膜的高電阻化是具有剛玉結構的結晶性氧化物薄的特有問題。另外表2中以「○」標記的,電阻率均為80mΩcm以下。
接著進行研究:在條件1下形成的α-氧化鎵的電阻值根據退火條件如何變化。其結果如表3所示,膜厚為300nm(0.3μm)時,在全部的退火溫度下產生了高電阻化。另外表3中以「○」標記的,電阻率均為80mΩcm以下。
(比較例)
除了沒有進行退火處理,以及下述表4中所示為成膜條件以外,與上述條件1的實施例相同,在藍寶石基板上層疊α-氧化鎵。測量得到的結晶性層疊結構體的膜厚和比電阻(specific resistance)。
結果如表4所示。
(試驗例:TEM像)
除了成膜溫度為600℃以外,與上述條件1的實施例相同,在藍寶石基板上層疊α-氧化鎵。用TEM測量得到的結晶性層疊結構體的膜厚。TEM像如圖4所示。測量的結果是膜厚為4.56μm。另外比較例中得到的結晶性層疊結構體的TEM像分別顯示於圖5。
本發明的結晶性層疊結構體可以用於MIS或HEMT等電晶體、TFT、使用半導體-金屬連接的肖特基勢壘二極體(Schottky barrier diode)、與其他P層組合的PN或PIN二極體、或發受光元件(Light emitting and receiving element)等半導體裝置中。
1‧‧‧底層基板
3‧‧‧結晶性氧化物薄膜
3b‧‧‧導電性薄膜
3a‧‧‧絕緣性薄膜
5‧‧‧柵極絕緣膜
7‧‧‧柵電極
9‧‧‧源極和漏極電極
Claims (9)
- 一種結晶性層疊結構體,其具備:底層基板;和直接或介由其他層設置於該底層基板上的結晶性氧化物薄膜,其中,該結晶性氧化物薄膜具有剛玉結構,所述結晶性氧化物薄膜的膜厚是1μm以上,且所述結晶性氧化物薄膜的電阻率為80mΩcm以下。
- 如請求項1中所述的結晶性層疊結構體,其中,所述結晶性氧化物薄膜至少含有鎵。
- 如請求項1中所述的結晶性層疊結構體,其中,所述結晶性氧化物薄膜的表面粗糙度Ra為0.1μm以下。
- 如請求項1~3的任意一項中所述的結晶性層疊結構體,其中,所述膜厚為1~20μm。
- 如請求項1~3的任意一項中所述的結晶性層疊結構體,其中,所述底層基板是c面藍寶石基板。
- 一種形成具有剛玉結構的結晶性氧化物薄膜的結晶性層疊結構體之製造方法,其中,將原料溶液微粒化而生成原料微粒,將該原料微粒以載氣向成膜室供給,在配置於所述成膜室內的底層基板上形成具有所述剛玉結構的結晶性氧化物薄膜;並且,其中,所述結晶性氧化物薄膜的膜厚為1μm以上,所述結晶性氧化物薄膜的電阻率為80mΩcm以下; 所述結晶性氧化物薄膜的膜厚形成為1μm以上之後,進行退火處理。
- 如請求項6中所述的製造方法,其中,形成的所述結晶性氧化物薄膜的膜厚為1~20μm。
- 如請求項6或7中所述的製造方法,其中,以600℃以下的條件進行退火處理。
- 一種半導體裝置,其中,使用請求項1~5的任意一項中所述的結晶性層疊結構體而構成該半導體裝置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014072779 | 2014-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201536966A TW201536966A (zh) | 2015-10-01 |
TWI546424B true TWI546424B (zh) | 2016-08-21 |
Family
ID=52146227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104110316A TWI546424B (zh) | 2014-03-31 | 2015-03-30 | A crystalline laminated structure, and a semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (3) | US10109707B2 (zh) |
EP (1) | EP2927934B1 (zh) |
JP (2) | JP6379368B2 (zh) |
CN (3) | CN104952926B (zh) |
TW (1) | TWI546424B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9379190B2 (en) * | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
CN110828551A (zh) | 2014-07-22 | 2020-02-21 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
JP2016031953A (ja) * | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
CN106158974A (zh) * | 2016-08-29 | 2016-11-23 | 北京大学 | 一种ω型顶栅结构的鳍式场效应晶体管及其制备方法 |
US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
JP7126082B2 (ja) * | 2016-08-31 | 2022-08-26 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
JP6994181B2 (ja) * | 2016-08-31 | 2022-02-04 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
CN115101587A (zh) * | 2016-11-07 | 2022-09-23 | 株式会社Flosfia | 结晶性多层结构、半导体装置及多层结构 |
US10943981B2 (en) * | 2017-08-24 | 2021-03-09 | Flosfia Inc. | Semiconductor device |
JP2019151922A (ja) | 2018-02-28 | 2019-09-12 | 株式会社Flosfia | 積層体および半導体装置 |
JP2020011858A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
JP2020011859A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
US20200083332A1 (en) * | 2018-09-05 | 2020-03-12 | Industrial Technology Research Institute | Semiconductor device and method for fabricating the same |
JP7315136B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物半導体 |
JP7315137B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
JP7179294B2 (ja) * | 2019-04-12 | 2022-11-29 | 信越化学工業株式会社 | 酸化ガリウム半導体膜の製造方法 |
CN113677834A (zh) * | 2019-04-24 | 2021-11-19 | 日本碍子株式会社 | 半导体膜 |
JP7045014B2 (ja) * | 2019-08-28 | 2022-03-31 | 信越化学工業株式会社 | 積層構造体の製造方法 |
JP7306640B2 (ja) * | 2019-08-28 | 2023-07-11 | 信越化学工業株式会社 | 結晶性酸化物膜 |
JP7078582B2 (ja) * | 2019-08-29 | 2022-05-31 | 信越化学工業株式会社 | 積層構造体、半導体装置及び結晶性酸化膜の成膜方法 |
JP7078581B2 (ja) * | 2019-08-29 | 2022-05-31 | 信越化学工業株式会社 | 積層構造体及び半導体装置並びに積層構造体の製造方法 |
CN114651084B (zh) * | 2019-10-31 | 2024-08-06 | 东曹株式会社 | 层叠膜结构体和其制造方法 |
JP7530615B2 (ja) * | 2020-01-10 | 2024-08-08 | 株式会社Flosfia | 結晶、半導体素子および半導体装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
US7015495B2 (en) * | 2001-03-16 | 2006-03-21 | Nippon Sheet Glass Co., Japan | Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate |
JPWO2005054550A1 (ja) * | 2003-12-01 | 2007-12-06 | 大日本印刷株式会社 | 人工コランダム結晶 |
JP2005235961A (ja) * | 2004-02-18 | 2005-09-02 | Univ Waseda | Ga2O3系単結晶の導電率制御方法 |
US20070287221A1 (en) | 2006-06-12 | 2007-12-13 | Xerox Corporation | Fabrication process for crystalline zinc oxide semiconductor layer |
US7476615B2 (en) | 2006-11-01 | 2009-01-13 | Intel Corporation | Deposition process for iodine-doped ruthenium barrier layers |
TWI478347B (zh) * | 2007-02-09 | 2015-03-21 | Idemitsu Kosan Co | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
KR20170142998A (ko) | 2009-12-25 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
JP5853350B2 (ja) | 2010-03-08 | 2016-02-09 | 住友化学株式会社 | 電気装置 |
US8629438B2 (en) * | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI562379B (en) * | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
US9299852B2 (en) * | 2011-06-16 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
JP6142358B2 (ja) | 2011-09-08 | 2017-06-07 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
US20140217471A1 (en) | 2011-09-08 | 2014-08-07 | National Institute of Information and Communicatio ns Technology | Ga2O3 SEMICONDUCTOR ELEMENT |
KR20130055521A (ko) * | 2011-11-18 | 2013-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치 |
US8981368B2 (en) * | 2012-01-11 | 2015-03-17 | Sony Corporation | Thin film transistor, method of manufacturing thin film transistor, display, and electronic apparatus |
JP5912046B2 (ja) * | 2012-01-26 | 2016-04-27 | 株式会社Shカッパープロダクツ | 薄膜トランジスタ、その製造方法および該薄膜トランジスタを用いた表示装置 |
JP2013201211A (ja) * | 2012-03-23 | 2013-10-03 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 |
KR102241249B1 (ko) * | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
JP5397794B1 (ja) | 2013-06-04 | 2014-01-22 | Roca株式会社 | 酸化物結晶薄膜の製造方法 |
-
2014
- 2014-12-19 EP EP14199082.0A patent/EP2927934B1/en active Active
- 2014-12-19 US US14/577,917 patent/US10109707B2/en active Active
-
2015
- 2015-03-30 CN CN201510144633.4A patent/CN104952926B/zh active Active
- 2015-03-30 CN CN201910452653.6A patent/CN110112220A/zh active Pending
- 2015-03-30 JP JP2015070468A patent/JP6379368B2/ja active Active
- 2015-03-30 CN CN201910603781.6A patent/CN110164961B/zh active Active
- 2015-03-30 TW TW104110316A patent/TWI546424B/zh active
-
2018
- 2018-06-21 US US16/014,633 patent/US10204978B2/en active Active
- 2018-07-03 JP JP2018126538A patent/JP6539920B2/ja active Active
-
2019
- 2019-01-11 US US16/245,991 patent/US10535728B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201536966A (zh) | 2015-10-01 |
US10535728B2 (en) | 2020-01-14 |
US20150279927A1 (en) | 2015-10-01 |
CN110112220A (zh) | 2019-08-09 |
US10204978B2 (en) | 2019-02-12 |
CN104952926B (zh) | 2019-08-13 |
EP2927934A1 (en) | 2015-10-07 |
CN104952926A (zh) | 2015-09-30 |
JP6379368B2 (ja) | 2018-08-29 |
CN110164961B (zh) | 2020-09-08 |
JP2018203613A (ja) | 2018-12-27 |
CN110164961A (zh) | 2019-08-23 |
JP2015199648A (ja) | 2015-11-12 |
EP2927934B1 (en) | 2017-07-05 |
JP6539920B2 (ja) | 2019-07-10 |
US20190148482A1 (en) | 2019-05-16 |
US10109707B2 (en) | 2018-10-23 |
US20180308924A1 (en) | 2018-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI546424B (zh) | A crystalline laminated structure, and a semiconductor device | |
JP6893625B2 (ja) | 結晶性積層構造体、半導体装置 | |
JP7352226B2 (ja) | 結晶性半導体膜および半導体装置 | |
TWI571525B (zh) | A crystalline laminated structure, and a semiconductor device | |
JP6916426B2 (ja) | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 | |
JP2015196603A (ja) | 結晶性積層構造体、半導体装置 | |
WO2018084304A1 (ja) | 結晶性酸化物半導体膜および半導体装置 | |
JP2016066756A (ja) | 結晶性積層構造体の製造方法および半導体装置 | |
JP6230196B2 (ja) | 結晶性半導体膜および半導体装置 |