CN110176493A - 结晶性层叠结构体，半导体装置 - Google Patents

结晶性层叠结构体，半导体装置 Download PDF

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Publication number
CN110176493A
CN110176493A CN201910497081.3A CN201910497081A CN110176493A CN 110176493 A CN110176493 A CN 110176493A CN 201910497081 A CN201910497081 A CN 201910497081A CN 110176493 A CN110176493 A CN 110176493A
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thin film
crystallized oxide
film
crystalline oxide
crystalline
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Chinese (zh)
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人罗俊实
织田真也
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FLOSFIA KK
Flosfia Inc
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FLOSFIA KK
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/0259—Microstructure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02623—Liquid deposition
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201910497081.3A 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置 Pending CN110176493A (zh)

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JP2014072780 2014-03-31
JP2014-072780 2014-03-31
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CN201910497081.3A Pending CN110176493A (zh) 2014-03-31 2015-03-30 结晶性层叠结构体，半导体装置
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EP4112184A4 (en) * 2020-02-27 2024-09-04 Shin-Etsu Chemical Co., Ltd. Atomizing apparatus for film formation and film forming apparatus using same, and semiconductor film

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JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
EP3712305A4 (en) * 2017-11-15 2021-11-17 Flosfia Inc. P-TYPE SEMICONDUCTOR OXIDE FILM AND ITS MANUFACTURING PROCESS
WO2020027243A1 (ja) * 2018-08-01 2020-02-06 出光興産株式会社 結晶構造化合物、酸化物焼結体、スパッタリングターゲット、結晶質酸化物薄膜、アモルファス酸化物薄膜、薄膜トランジスタ、及び電子機器
JP7115688B2 (ja) * 2019-01-25 2022-08-09 株式会社デンソー 成膜装置及び半導体装置の製造方法
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
WO2021064795A1 (ja) * 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
JP7200205B2 (ja) 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法
TWM633282U (zh) 2021-04-28 2022-10-21 日商信越化學工業股份有限公司 積層結構體、半導體裝置以及積層結構體的製造系統

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EP4112184A4 (en) * 2020-02-27 2024-09-04 Shin-Etsu Chemical Co., Ltd. Atomizing apparatus for film formation and film forming apparatus using same, and semiconductor film

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CN110299414A (zh) 2019-10-01
US11038026B2 (en) 2021-06-15
TW201829824A (zh) 2018-08-16
TW201536945A (zh) 2015-10-01
JP2015199649A (ja) 2015-11-12
CN110310996B (zh) 2020-09-08
JP2018203614A (ja) 2018-12-27
CN104952927B (zh) 2019-08-13
TWI665327B (zh) 2019-07-11
EP2933825A1 (en) 2015-10-21
TW201713790A (zh) 2017-04-16
TWI571525B (zh) 2017-02-21
US10090388B2 (en) 2018-10-02
CN104952927A (zh) 2015-09-30
US20190013384A1 (en) 2019-01-10
US20150279944A1 (en) 2015-10-01
EP2933825B1 (en) 2017-07-05
JP6539921B2 (ja) 2019-07-10
CN110310996A (zh) 2019-10-08
JP6379369B2 (ja) 2018-08-29
TWI625413B (zh) 2018-06-01

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