TWI625413B - 結晶性氧化物半導體薄膜 - Google Patents

結晶性氧化物半導體薄膜 Download PDF

Info

Publication number
TWI625413B
TWI625413B TW105143387A TW105143387A TWI625413B TW I625413 B TWI625413 B TW I625413B TW 105143387 A TW105143387 A TW 105143387A TW 105143387 A TW105143387 A TW 105143387A TW I625413 B TWI625413 B TW I625413B
Authority
TW
Taiwan
Prior art keywords
thin film
crystalline oxide
film
oxide semiconductor
semiconductor thin
Prior art date
Application number
TW105143387A
Other languages
English (en)
Chinese (zh)
Other versions
TW201713790A (zh
Inventor
Toshimi HITORA
人羅俊實
Masaya Oda
織田真也
Original Assignee
Flosfia Inc.
Ｆｌｏｓｆｉａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc., Ｆｌｏｓｆｉａ股份有限公司 filed Critical Flosfia Inc.
Publication of TW201713790A publication Critical patent/TW201713790A/zh
Application granted granted Critical
Publication of TWI625413B publication Critical patent/TWI625413B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW105143387A 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜 TWI625413B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-072780 2014-03-31
JP2014072780 2014-03-31

Publications (2)

Publication Number Publication Date
TW201713790A TW201713790A (zh) 2017-04-16
TWI625413B true TWI625413B (zh) 2018-06-01

Family

ID=52146229

Family Applications (3)

Application Number Title Priority Date Filing Date
TW105143387A TWI625413B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜
TW107112140A TWI665327B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜及半導體裝置
TW104110315A TWI571525B (zh) 2014-03-31 2015-03-30 A crystalline laminated structure, and a semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW107112140A TWI665327B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜及半導體裝置
TW104110315A TWI571525B (zh) 2014-03-31 2015-03-30 A crystalline laminated structure, and a semiconductor device

Country Status (5)

Country Link
US (2) US10090388B2 (enExample)
EP (1) EP2933825B1 (enExample)
JP (2) JP6379369B2 (enExample)
CN (4) CN110299414A (enExample)
TW (3) TWI625413B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
JP7274701B2 (ja) * 2017-11-15 2023-05-17 株式会社Flosfia ｐ型酸化物半導体膜及びその形成方法
CN116240630A (zh) * 2018-08-01 2023-06-09 出光兴产株式会社 晶体化合物、氧化物烧结体、溅射靶、晶质及无定形氧化物薄膜、薄膜晶体管及电子设备
JP7115688B2 (ja) * 2019-01-25 2022-08-09 株式会社デンソー 成膜装置及び半導体装置の製造方法
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
CN114423883B (zh) * 2019-09-30 2024-03-12 日本碍子株式会社 α－Ga2O3系半导体膜
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7200205B2 (ja) 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置
TW202242209A (zh) 2021-04-28 2022-11-01 日商信越化學工業股份有限公司 積層結構體、半導體裝置以及積層結構體的製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035843A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000188257A (ja) * 1998-12-22 2000-07-04 Sharp Corp 結晶性シリコン系半導体薄膜の製造方法
JP2000232222A (ja) * 1999-02-10 2000-08-22 Nec Corp 半導体装置の製造方法
EP1083590A4 (en) * 1999-03-05 2002-09-18 Seiko Epson Corp METHOD FOR PRODUCING A THIN-LAYER SEMICONDUCTOR COMPONENT
US20070287221A1 (en) * 2006-06-12 2007-12-13 Xerox Corporation Fabrication process for crystalline zinc oxide semiconductor layer
US7476615B2 (en) * 2006-11-01 2009-01-13 Intel Corporation Deposition process for iodine-doped ruthenium barrier layers
JP2009091212A (ja) * 2007-10-10 2009-04-30 Nippon Light Metal Co Ltd 酸化ガリウム単結晶基板及びその製造方法
JP2010080719A (ja) * 2008-09-26 2010-04-08 Yamaguchi Univ 半導体発光素子及びその製造方法
KR101811203B1 (ko) 2009-12-25 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제작하기 위한 방법
US8410474B2 (en) * 2010-01-21 2013-04-02 Hitachi, Ltd. Graphene grown substrate and electronic/photonic integrated circuits using same
US10032239B2 (en) * 2010-06-10 2018-07-24 United Parcel Service Of America, Inc. Enhanced payments for shipping
US8987728B2 (en) * 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
KR102003077B1 (ko) * 2011-06-15 2019-07-23 스미토모덴키고교가부시키가이샤 도전성 산화물 및 그 제조 방법과 산화물 반도체막
JP5765117B2 (ja) * 2011-07-27 2015-08-19 アイシン精機株式会社 暖房椅子
JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5975466B2 (ja) 2011-09-08 2016-08-23 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
JP2013191824A (ja) * 2012-02-15 2013-09-26 Sharp Corp 酸化物半導体及びこれを含む半導体接合素子
JP2013201211A (ja) 2012-03-23 2013-10-03 Sony Corp 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器
JP5397794B1 (ja) * 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035843A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Akaiwa et al., "Electrical conductive corundum-structured (alpha)-Ga2O3 thin film on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition", Japanese Journal of Applied Physics,51,070203, June, 2012) *

Also Published As

Publication number Publication date
CN110310996A (zh) 2019-10-08
US20150279944A1 (en) 2015-10-01
CN110299414A (zh) 2019-10-01
TW201713790A (zh) 2017-04-16
TWI571525B (zh) 2017-02-21
CN110310996B (zh) 2020-09-08
CN110176493A (zh) 2019-08-27
TWI665327B (zh) 2019-07-11
US11038026B2 (en) 2021-06-15
JP2015199649A (ja) 2015-11-12
EP2933825B1 (en) 2017-07-05
CN104952927B (zh) 2019-08-13
TW201829824A (zh) 2018-08-16
CN104952927A (zh) 2015-09-30
EP2933825A1 (en) 2015-10-21
US20190013384A1 (en) 2019-01-10
JP2018203614A (ja) 2018-12-27
JP6379369B2 (ja) 2018-08-29
JP6539921B2 (ja) 2019-07-10
US10090388B2 (en) 2018-10-02
TW201536945A (zh) 2015-10-01

Similar Documents

Publication Publication Date Title
TWI625413B (zh) 結晶性氧化物半導體薄膜
US10204978B2 (en) Crystalline multilayer oxide thin films structure in semiconductor device
JP6893625B2 (ja) 結晶性積層構造体、半導体装置
JP2015196603A (ja) 結晶性積層構造体、半導体装置
JP2016066756A (ja) 結晶性積層構造体の製造方法および半導体装置
JP2017005147A (ja) 結晶性半導体膜、積層構造体および半導体装置
JP2017005146A (ja) 結晶性半導体膜、積層構造体および半導体装置
JP2015164158A (ja) 半導体装置用積層構造体、半導体装置