TWI570838B - 碳化矽基板上的溝槽結構以及其製作方法 - Google Patents
碳化矽基板上的溝槽結構以及其製作方法 Download PDFInfo
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- TWI570838B TWI570838B TW104137373A TW104137373A TWI570838B TW I570838 B TWI570838 B TW I570838B TW 104137373 A TW104137373 A TW 104137373A TW 104137373 A TW104137373 A TW 104137373A TW I570838 B TWI570838 B TW I570838B
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- carbide substrate
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- tantalum carbide
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- 238000000034 method Methods 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 title claims description 41
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 37
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 37
- 239000011241 protective layer Substances 0.000 claims description 23
- 238000005496 tempering Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000001994 activation Methods 0.000 claims 1
- 230000004913 activation Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
本發明是有關於一種碳化矽基板上的溝槽結構及其
製作方法，且特別是有關於一種碳化矽基板上具有圓弧狀溝槽底部的溝槽結構及其製作方法。
碳化矽材料具備寬帶隙、高導熱度、低熱膨脹率等
特徵，做為具有補充矽所不足之物性的半導體材料，應用於高頻率．高電力裝置、功率裝置等。
在半導體裝置中高密度集成化更為發展的現代，要
求更為密緻之精細圖型加工，因此一般碳化矽材料的溝槽製程採用乾式蝕刻進行加工，乾式蝕刻雖易於獲得高深寬比的溝槽結構，卻無法產生圓弧狀的溝槽底部，因此通常會在蝕刻完成後，利用鈍氣環境進行回火，使其產生圓弧狀的溝槽底部，但碳化矽材料的表面同樣會因高溫回火製程而粗糙化，進而影響蝕刻結構的精度。
本發明係有關於一種碳化矽基板上的溝槽結構以及
其製作方法，藉由在回火製程中以保護層覆蓋基板表面，進而改善基板表面因回火製程而粗糙化的問題。
根據本發明，提出一種溝槽結構的製作方法，一種溝槽結構的製作方法，包含提供一碳化矽基板；形成一保護層於該碳化矽基板上；形成一阻擋層於該保護層上；圖案化該阻擋層與該保護層，以形成一開口；以圖案化的該阻擋層為硬式罩幕，透過該開口圖案化該碳化矽基板，以形成一溝槽；移除該阻擋層；進行一回火製程，以形成一圓弧狀的溝槽底部；以及移除該保護層。
根據本發明，提出一種碳化矽基板上的溝槽結構，該溝槽結構包含：一溝槽側壁，垂直於該碳化矽基板表面；以及一溝槽底部，連接至該溝槽側壁，該溝槽底部具有圓弧狀的表面。
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式，作詳細說明如下：
10‧‧‧碳化矽基板
11‧‧‧表面
20‧‧‧保護層
30‧‧‧阻擋層
40‧‧‧開口
50‧‧‧溝槽
50a‧‧‧溝槽側壁
50b‧‧‧溝槽底部
第1圖繪示依本發明之溝槽結構製作方法的結構剖面示意圖。
第2圖繪示依本發明之溝槽結構製作方法的結構剖面示意圖。
第3圖繪示依本發明之溝槽結構製作方法的結構剖面示意圖。
第4圖繪示依本發明之溝槽結構製作方法的結構剖面示意圖。
第5圖繪示依本發明之溝槽結構製作方法的結構剖面示意圖。
以下係參照所附圖式詳細敘述本發明之實施例。圖式中相同
的標號係用以標示相同或類似之部分。需注意的是，圖式係已簡化以利清楚說明實施例之內容，圖式上的尺寸比例並非按照實際產品等比例繪製，因此並非作為限縮本發明保護範圍之用。
第1~5圖繪示依本發明之溝槽結構製作方法的結構剖
面示意圖。以下段落針對本發明之第一實施例的一種溝槽結構的製作流程進行說明。請先參照第1圖，提供碳化矽基板10，提供之碳化矽基板10可為已完成活性化處理製程或未完成活性化處理製程的碳化矽基板。
在本實施例中，提供之碳化矽基板10已完成活性化處理製程。活性化處理製程例如在1600℃以上的溫度環境中，通入包含鈍氣的氣體進行高溫回火，但本發明不以此為限。
接著依序在碳化矽基板10上形成保護層20與阻擋層30。
保護層20的材料例如為石墨(graphite)或氮化鋁(AlN)。形成保護層20的方法例如為沉積，當保護層20的材料為石墨時，還可使用如光阻燒結的高溫碳化方式形成。阻擋層30的材料例如為二氧化矽(SiO2)、氮化矽(SiNx)、或金屬，形成阻擋層30的方法例如為沉積。
接著，如圖2所示，圖案化保護層20與阻擋層30，以形
成開口40。圖案化保護層20與阻擋層30的方法例如以光阻為罩幕，對保護層20與阻擋層30進行蝕刻，在蝕刻完成後再行移除光阻或硬式遮罩；或是直接採用雷射直寫的方式對對保護層20與阻擋層30圖案化。
如圖3所示，以圖案化的阻擋層30為硬式罩幕(hard
mask)，圖案化碳化矽基板10以形成溝槽結構50，溝槽結構50包含與碳化矽基板10的表面11垂直的溝槽側壁50a。圖案化碳化矽基板10的方法為乾式蝕刻，例如以電漿蝕刻方式，通入氣體包含組合如六氟化硫(SF6)和氧氣(O2)、氬氣(Ar)、或三氟化氮(NF3)和溴化氫(HBr)和氧氣(O2)對碳化矽基板10進行蝕刻。
如圖4所示，移除圖案化的阻擋層30，此時的碳化矽基板
10除了溝槽結構50外均被保護層20覆蓋，接著對碳化矽基板10進行回火製程，以在溝槽結構50中形成圓弧狀的溝槽底部50b。在本實施例中，回火製程例如在1450℃到1850℃的溫度環境中，通入包含氫氣、氮氣、或鈍氣等氣體。
如圖5所示，在完成回火製程後，移除保護層20，
以完成包含溝槽側壁50a與溝槽底部50b的溝槽結構50，其中溝槽側壁50a與碳化矽基板10的表面11形成直角，溝槽底部50b具有圓弧狀結構。
由於在回火製程中，碳化矽基板10除溝槽結構50外的表面11均被保護層20所覆蓋，因此可在回火製程中，保護碳化矽基板10的表面11不受高溫影響產生粗糙化，避免溝槽側壁50a與碳化矽基板10的表面11的接觸部位產生圓弧化，進而確保在同時製作多個溝槽結構50時其間的線距。
同樣的，請參照第1~5圖，以下段落針對本發明之第二實
施例的一種溝槽結構的製作流程進行說明。本發明之第二實施例的製作流程與第一實施例大致相同，以下僅針對不同處進行說明，相同之處則不加以贅述。在本發明的第二實施例中，如第1圖所示，提供碳化矽基板10，提供之碳化矽基板10為未完成活性化處理製程的碳化矽基板。且如圖4所示，對碳化矽基板10進行回火製程，以形成圓弧狀的溝槽底部50b。
在本發明之第二實施例中，高溫回火製程例如在1600℃到1850℃的溫度環境中進行，通入包含氮氣或鈍氣等氣體。
值得注意的是，在本發明之第二實施例中，回火製程
加溫至1600℃的高溫，由於碳化矽基板10除了溝槽結構50外均被保護層20所覆蓋，因此可避免碳化矽基板10的表面11因本實施例的高溫回火製程而受損，並在高溫回火製程中同時形成圓弧狀的溝槽底部50b與完成碳化矽基板10的活性化處理製程。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧碳化矽基板
50‧‧‧溝槽
50a‧‧‧溝槽側壁
50b‧‧‧溝槽底面
Claims (8)
- 一種溝槽結構的製作方法，包含：提供一碳化矽基板；形成一保護層於該碳化矽基板上；形成一阻擋層於該保護層上；圖案化該阻擋層與該保護層，以形成一開口；以圖案化的該阻擋層為硬式罩幕，透過該開口圖案化該碳化矽基板，以形成一溝槽；移除圖案化的該阻擋層；進行一回火製程，以形成一圓弧狀的溝槽底部；以及移除該保護層。
- 如申請專利範圍第1項所述之溝槽結構的製作方法，其中該回火製程溫度介於1450℃到1850℃之間。
- 如申請專利範圍第1項所述之溝槽結構的製作方法，其中該回火製程溫度介於1600℃到1850℃之間，該碳化矽基板於該回火製程階段同時完成一活性化處理製程。
- 如申請專利範圍第1項所述之溝槽結構的製作方法，其中該保護層的材料為石墨(graphite)或氮化鋁(AlN)。
- 如申請專利範圍第1項所述之溝槽結構的製作方法，其中該阻擋層的材料為二氧化矽(SiO2)、氮化矽(SiNx)、或金屬。
- 如申請專利範圍第2項所述之溝槽結構的製作方法，其中該回火製程採用氫氣、氮氣、或鈍氣環境。
- 如申請專利範圍第3項所述之溝槽結構的製作方法，其中該回火製程採用氮氣或鈍氣環境。
- 一種碳化矽基板上的溝槽結構，該溝槽結構包含：一溝槽側壁，垂直於該碳化矽基板表面；以及一溝槽底部，連接至該溝槽側壁，該溝槽底部具有圓弧狀的表面。
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| TW104137373A TWI570838B (zh) | 2015-11-12 | 2015-11-12 | 碳化矽基板上的溝槽結構以及其製作方法 |
| CN201510888732.3A CN106711035B (zh) | 2015-11-12 | 2015-12-07 | 碳化硅基板上的沟槽结构以及其制作方法 |
| US14/975,995 US9899222B2 (en) | 2015-11-12 | 2015-12-21 | Trench structure on SiC substrate and method for fabricating thereof |
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| US10343900B2 (en) * | 2016-09-07 | 2019-07-09 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Material structure and method for deep silicon carbide etching |
| CN111128717B (zh) * | 2018-10-30 | 2022-10-04 | 株洲中车时代半导体有限公司 | 一种碳化硅沟槽结构的制造方法 |
| WO2020102990A1 (zh) * | 2018-11-20 | 2020-05-28 | 长江存储科技有限责任公司 | 外延层和3d nand存储器的形成方法、退火设备 |
| CN111348821A (zh) * | 2018-12-21 | 2020-06-30 | 财团法人工业技术研究院 | 用于玻璃塑形的石墨模具及其制造方法 |
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
| GB202014733D0 (en) * | 2020-09-18 | 2020-11-04 | Oxford Instruments Nanotechnology Tools Ltd | Method of preparing a silicon carbide wafer |
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| Publication number | Publication date |
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| CN106711035A (zh) | 2017-05-24 |
| US9899222B2 (en) | 2018-02-20 |
| TW201717313A (zh) | 2017-05-16 |
| CN106711035B (zh) | 2019-07-12 |
| US20170140936A1 (en) | 2017-05-18 |
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