TWI562218B - Semiconductor device, method of manufacturing the device, and liquid crystal display - Google Patents
Semiconductor device, method of manufacturing the device, and liquid crystal displayInfo
- Publication number
- TWI562218B TWI562218B TW101141054A TW101141054A TWI562218B TW I562218 B TWI562218 B TW I562218B TW 101141054 A TW101141054 A TW 101141054A TW 101141054 A TW101141054 A TW 101141054A TW I562218 B TWI562218 B TW I562218B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- liquid crystal
- crystal display
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Dicing (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011247014A JP5833411B2 (ja) | 2011-11-11 | 2011-11-11 | 半導体装置およびその製造方法ならびに液晶表示装置 |
Publications (2)
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TW201330081A TW201330081A (zh) | 2013-07-16 |
TWI562218B true TWI562218B (en) | 2016-12-11 |
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TW101141054A TWI562218B (en) | 2011-11-11 | 2012-11-05 | Semiconductor device, method of manufacturing the device, and liquid crystal display |
Country Status (4)
Country | Link |
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US (2) | US9224622B2 (zh) |
JP (1) | JP5833411B2 (zh) |
CN (1) | CN103107131B (zh) |
TW (1) | TWI562218B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5833411B2 (ja) * | 2011-11-11 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法ならびに液晶表示装置 |
JP2015032661A (ja) * | 2013-08-01 | 2015-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置とその製造方法および半導体装置の実装方法 |
CN104777938A (zh) * | 2015-04-23 | 2015-07-15 | 业成光电(深圳)有限公司 | 触控装置 |
TWI600125B (zh) * | 2015-05-01 | 2017-09-21 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
JP6467592B2 (ja) * | 2016-02-04 | 2019-02-13 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法および電子部品実装構造体の製造方法ならびに電子部品実装構造体 |
JP2018170333A (ja) * | 2017-03-29 | 2018-11-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN110799859A (zh) * | 2017-06-27 | 2020-02-14 | 株式会社大赛璐 | 透镜的制造方法 |
JP7069168B2 (ja) * | 2017-07-20 | 2022-05-17 | 三井化学東セロ株式会社 | 電子装置の製造方法 |
CN107403760B (zh) * | 2017-07-28 | 2018-11-30 | 维沃移动通信有限公司 | 一种芯片保护结构及终端设备 |
KR102430431B1 (ko) * | 2017-12-27 | 2022-08-08 | 한미반도체 주식회사 | 반도체 패키지 처리장치 및 반도체 패키지 처리방법 |
CN111522164A (zh) * | 2019-02-01 | 2020-08-11 | 群创光电股份有限公司 | 电子装置 |
JP7443689B2 (ja) * | 2019-07-24 | 2024-03-06 | Tdk株式会社 | 電子部品内蔵基板の製造方法 |
US11615979B2 (en) * | 2019-12-18 | 2023-03-28 | Disco Corporation | Method of processing wafer |
US11923320B2 (en) * | 2020-12-31 | 2024-03-05 | Texas Instruments Incorporated | Semiconductor device having tapered metal coated sidewalls |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040263725A1 (en) * | 1996-08-06 | 2004-12-30 | Eiji Muramatsu | Liquid crystal display device and electronic device using the same |
US20070216001A1 (en) * | 2006-03-01 | 2007-09-20 | Oki Electric Industry Co., Ltd. | Semiconductor package containing multi-layered semiconductor chips |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06112371A (ja) * | 1992-09-30 | 1994-04-22 | Hitachi Ltd | Icチップを搭載した機器 |
JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
JP4201052B2 (ja) * | 1996-08-06 | 2008-12-24 | セイコーエプソン株式会社 | 液晶表示装置及びそれを用いた電子機器 |
JPH10319860A (ja) * | 1997-05-23 | 1998-12-04 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
JP3497722B2 (ja) * | 1998-02-27 | 2004-02-16 | 富士通株式会社 | 半導体装置及びその製造方法及びその搬送トレイ |
TWI265550B (en) * | 2002-05-14 | 2006-11-01 | Toshiba Corp | Fabrication method, manufacturing method for semiconductor device, and fabrication device |
JP4013753B2 (ja) * | 2002-12-11 | 2007-11-28 | 松下電器産業株式会社 | 半導体ウェハの切断方法 |
JP2006086509A (ja) * | 2004-08-17 | 2006-03-30 | Denso Corp | 半導体基板の分断方法 |
JP4507175B2 (ja) * | 2004-09-09 | 2010-07-21 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2007207796A (ja) * | 2006-01-31 | 2007-08-16 | Renesas Technology Corp | 半導体装置の製造方法 |
CN101086956B (zh) * | 2006-06-09 | 2011-04-13 | 松下电器产业株式会社 | 半导体装置的制造方法 |
JP2009099838A (ja) * | 2007-10-18 | 2009-05-07 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP4592739B2 (ja) * | 2007-11-15 | 2010-12-08 | シャープ株式会社 | 表示装置、携帯機器 |
JP2009140950A (ja) * | 2007-12-03 | 2009-06-25 | Hitachi Ulsi Systems Co Ltd | 半導体装置の製造方法 |
JP2010165963A (ja) * | 2009-01-19 | 2010-07-29 | Furukawa Electric Co Ltd:The | 半導体ウェハの処理方法 |
JP5833411B2 (ja) * | 2011-11-11 | 2015-12-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法ならびに液晶表示装置 |
-
2011
- 2011-11-11 JP JP2011247014A patent/JP5833411B2/ja not_active Expired - Fee Related
-
2012
- 2012-11-05 US US13/668,893 patent/US9224622B2/en not_active Expired - Fee Related
- 2012-11-05 TW TW101141054A patent/TWI562218B/zh not_active IP Right Cessation
- 2012-11-09 CN CN201210446109.9A patent/CN103107131B/zh not_active Expired - Fee Related
-
2015
- 2015-11-19 US US14/946,094 patent/US20160071769A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040263725A1 (en) * | 1996-08-06 | 2004-12-30 | Eiji Muramatsu | Liquid crystal display device and electronic device using the same |
US20070216001A1 (en) * | 2006-03-01 | 2007-09-20 | Oki Electric Industry Co., Ltd. | Semiconductor package containing multi-layered semiconductor chips |
Also Published As
Publication number | Publication date |
---|---|
CN103107131A (zh) | 2013-05-15 |
JP2013104931A (ja) | 2013-05-30 |
US20160071769A1 (en) | 2016-03-10 |
US9224622B2 (en) | 2015-12-29 |
JP5833411B2 (ja) | 2015-12-16 |
CN103107131B (zh) | 2017-03-01 |
TW201330081A (zh) | 2013-07-16 |
US20130120699A1 (en) | 2013-05-16 |
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