TWI561832B - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
TWI561832B
TWI561832B TW101136882A TW101136882A TWI561832B TW I561832 B TWI561832 B TW I561832B TW 101136882 A TW101136882 A TW 101136882A TW 101136882 A TW101136882 A TW 101136882A TW I561832 B TWI561832 B TW I561832B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Application number
TW101136882A
Other languages
English (en)
Other versions
TW201333488A (zh
Inventor
Young Jun Ku
Original Assignee
Sk Hynix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sk Hynix Inc filed Critical Sk Hynix Inc
Publication of TW201333488A publication Critical patent/TW201333488A/zh
Application granted granted Critical
Publication of TWI561832B publication Critical patent/TWI561832B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
    • G01R31/318505—Test of Modular systems, e.g. Wafers, MCM's
    • G01R31/318513—Test of Multi-Chip-Moduls
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31712—Input or output aspects
    • G01R31/31717—Interconnect testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW101136882A 2012-02-14 2012-10-05 Semiconductor integrated circuit TWI561832B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120014856A KR101902938B1 (ko) 2012-02-14 2012-02-14 반도체 집적회로

Publications (2)

Publication Number Publication Date
TW201333488A TW201333488A (zh) 2013-08-16
TWI561832B true TWI561832B (en) 2016-12-11

Family

ID=48927608

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101136882A TWI561832B (en) 2012-02-14 2012-10-05 Semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US8922237B2 (zh)
KR (1) KR101902938B1 (zh)
CN (1) CN103248354B (zh)
TW (1) TWI561832B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456706B (zh) * 2012-10-24 2014-10-11 Univ Nat Changhua Education 矽穿孔自我繞線電路及其繞線方法
US8890607B2 (en) * 2013-03-15 2014-11-18 IPEnval Consultant Inc. Stacked chip system
KR101524409B1 (ko) * 2014-06-13 2015-05-29 호서대학교 산학협력단 3차원 반도체의 테스트 장치
KR102165233B1 (ko) * 2014-07-10 2020-10-13 에스케이하이닉스 주식회사 복수 채널을 구비하는 반도체 장치 및 시스템
KR20160146404A (ko) * 2015-06-12 2016-12-21 에스케이하이닉스 주식회사 입출력라인 테스트 장치 및 방법
KR102451650B1 (ko) * 2016-02-05 2022-10-11 에스케이하이닉스 주식회사 적층형 반도체 장치
KR102650497B1 (ko) * 2017-02-28 2024-03-25 에스케이하이닉스 주식회사 적층형 반도체 장치
KR102395446B1 (ko) 2017-09-28 2022-05-10 삼성전자주식회사 적층형 반도체 장치, 이를 포함하는 시스템 및 적층형 반도체 장치에서의 신호 전송 방법
KR102471416B1 (ko) * 2018-05-23 2022-11-29 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 메모리 모듈
KR20200112041A (ko) * 2019-03-20 2020-10-05 에스케이하이닉스 주식회사 적층형 반도체 장치 및 그의 테스트 방법
KR20200127534A (ko) 2019-05-02 2020-11-11 에스케이하이닉스 주식회사 반도체칩
KR20210029615A (ko) * 2019-09-06 2021-03-16 에스케이하이닉스 주식회사 반도체장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048706A1 (en) * 2006-08-23 2008-02-28 Sony Corporation Semiconductor device, semiconductor integrated circuit and bump resistance measurement method
US20100295600A1 (en) * 2009-05-20 2010-11-25 Qualcomm Incorporated Method and Apparatus for Providing Through Silicon VIA (TSV) Redundancy
US20110102011A1 (en) * 2009-09-28 2011-05-05 Imec Method and device for testing tsvs in a 3d chip stack
TW201144836A (en) * 2009-10-01 2011-12-16 Nat Univ Tsing Hua Method for testing through-silicon-via and the circuit thereof
US20120007624A1 (en) * 2010-07-07 2012-01-12 Sang-Jin Byeon Semiconductor system and device for identifying stacked chips and method thereof
TW201202719A (en) * 2010-07-13 2012-01-16 Global Unichip Corp Apparatus for through-silicon via test architecture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052113A (ko) * 1999-01-29 2000-08-16 윤종용 반도체 장치의 테스트 신호 발생 회로
JP2004028885A (ja) * 2002-06-27 2004-01-29 Fujitsu Ltd 半導体装置、半導体パッケージ及び半導体装置の試験方法
JP4345798B2 (ja) * 2006-10-12 2009-10-14 エルピーダメモリ株式会社 積層型半導体装置及びそのテスト方法
JP2009134573A (ja) * 2007-11-30 2009-06-18 Nec Corp マルチチップ半導体装置およびデータ転送方法
US7835207B2 (en) * 2008-10-07 2010-11-16 Micron Technology, Inc. Stacked device remapping and repair
KR101094916B1 (ko) * 2009-10-29 2011-12-15 주식회사 하이닉스반도체 반도체 장치의 테스트 회로 및 방법
KR101083675B1 (ko) * 2009-12-28 2011-11-16 주식회사 하이닉스반도체 데이터 압축 테스트 회로를 포함하는 반도체 메모리 장치
KR101143443B1 (ko) * 2010-03-29 2012-05-23 에스케이하이닉스 주식회사 반도체 장치 및 그 리페어 방법
KR101751045B1 (ko) * 2010-05-25 2017-06-27 삼성전자 주식회사 3ｄ 반도체 장치
KR101857677B1 (ko) * 2011-07-21 2018-05-14 에스케이하이닉스 주식회사 반도체 집적회로 및 그의 신호 전달 방법
TW201318086A (zh) 2011-10-17 2013-05-01 Ind Tech Res Inst 晶片堆疊中貫矽導孔的測試與修復裝置
KR20130042076A (ko) * 2011-10-18 2013-04-26 에스케이하이닉스 주식회사 반도체 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048706A1 (en) * 2006-08-23 2008-02-28 Sony Corporation Semiconductor device, semiconductor integrated circuit and bump resistance measurement method
US20100295600A1 (en) * 2009-05-20 2010-11-25 Qualcomm Incorporated Method and Apparatus for Providing Through Silicon VIA (TSV) Redundancy
US20110102011A1 (en) * 2009-09-28 2011-05-05 Imec Method and device for testing tsvs in a 3d chip stack
TW201144836A (en) * 2009-10-01 2011-12-16 Nat Univ Tsing Hua Method for testing through-silicon-via and the circuit thereof
US20120007624A1 (en) * 2010-07-07 2012-01-12 Sang-Jin Byeon Semiconductor system and device for identifying stacked chips and method thereof
TW201202719A (en) * 2010-07-13 2012-01-16 Global Unichip Corp Apparatus for through-silicon via test architecture

Also Published As

Publication number Publication date
TW201333488A (zh) 2013-08-16
US20130207685A1 (en) 2013-08-15
KR20130093342A (ko) 2013-08-22
CN103248354B (zh) 2018-01-23
US8922237B2 (en) 2014-12-30
CN103248354A (zh) 2013-08-14
KR101902938B1 (ko) 2018-11-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees