TWI561638B - - Google Patents

Info

Publication number
TWI561638B
TWI561638B TW105103474A TW105103474A TWI561638B TW I561638 B TWI561638 B TW I561638B TW 105103474 A TW105103474 A TW 105103474A TW 105103474 A TW105103474 A TW 105103474A TW I561638 B TWI561638 B TW I561638B
Authority
TW
Taiwan
Application number
TW105103474A
Other versions
TW201631170A (zh
Inventor
Koichi Sakamaki
Jun Fukuoka
Kazuya Saitoh
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of TW201631170A publication Critical patent/TW201631170A/zh
Application granted granted Critical
Publication of TWI561638B publication Critical patent/TWI561638B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • B22F3/15Hot isostatic pressing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7373Non-magnetic single underlayer comprising chromium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C14/00Alloys based on titanium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06Alloys based on chromium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
TW105103474A 2015-02-12 2016-02-03 鉻-鈦合金濺鍍靶材及其製造方法 TW201631170A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015025303 2015-02-12

Publications (2)

Publication Number Publication Date
TW201631170A TW201631170A (zh) 2016-09-01
TWI561638B true TWI561638B (zh) 2016-12-11

Family

ID=56614648

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105103474A TW201631170A (zh) 2015-02-12 2016-02-03 鉻-鈦合金濺鍍靶材及其製造方法

Country Status (6)

Country Link
JP (1) JP6312009B2 (zh)
CN (1) CN107208259B (zh)
MY (1) MY180072A (zh)
SG (1) SG11201706280XA (zh)
TW (1) TW201631170A (zh)
WO (1) WO2016129449A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110168129B (zh) * 2017-01-12 2021-04-30 日立金属株式会社 铬合金靶材
CN111438355B (zh) * 2020-04-13 2022-02-22 河北晟华新材料科技有限公司 一种铬铝硅靶材及其制备方法
CN112517917B (zh) * 2020-11-25 2023-04-18 河南东微电子材料有限公司 一种用于铬钛靶材的CrTiLa合金粉末的制备方法
CN112813326A (zh) * 2020-12-29 2021-05-18 有研工程技术研究院有限公司 一种钛铝铬合金靶及其制备方法
TWI769081B (zh) * 2021-09-17 2022-06-21 光洋應用材料科技股份有限公司 鉻鎳鈦合金靶材及其製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201221674A (en) * 2010-08-17 2012-06-01 Sanyo Special Steel Co Ltd Crti-based alloy and sputtering target material, perpendicular magnetic recording medium, and processes for producing same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002265B2 (ja) * 1990-12-12 2000-01-24 日本重化学工業株式会社 高純度金属クロムの製造方法
US5866067A (en) * 1997-03-24 1999-02-02 Sony Corporation And Materials Research Corporation High purity chromium metal by casting with controlled oxygen content
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6309595B1 (en) * 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
JP5854308B2 (ja) * 2010-05-06 2016-02-09 日立金属株式会社 Cr−Ti合金ターゲット材
SG10201607223SA (en) * 2011-09-14 2016-10-28 Jx Nippon Mining & Metals Corp High-purity copper-manganese-alloy sputtering target

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201221674A (en) * 2010-08-17 2012-06-01 Sanyo Special Steel Co Ltd Crti-based alloy and sputtering target material, perpendicular magnetic recording medium, and processes for producing same

Also Published As

Publication number Publication date
JPWO2016129449A1 (ja) 2017-11-24
SG11201706280XA (en) 2017-09-28
MY180072A (en) 2020-11-20
CN107208259A (zh) 2017-09-26
CN107208259B (zh) 2019-08-13
WO2016129449A1 (ja) 2016-08-18
TW201631170A (zh) 2016-09-01
JP6312009B2 (ja) 2018-04-18

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