SG11201706280XA - Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME - Google Patents

Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME

Info

Publication number
SG11201706280XA
SG11201706280XA SG11201706280XA SG11201706280XA SG11201706280XA SG 11201706280X A SG11201706280X A SG 11201706280XA SG 11201706280X A SG11201706280X A SG 11201706280XA SG 11201706280X A SG11201706280X A SG 11201706280XA SG 11201706280X A SG11201706280X A SG 11201706280XA
Authority
SG
Singapore
Prior art keywords
target material
sputtering target
producing same
alloy sputtering
alloy
Prior art date
Application number
SG11201706280XA
Other languages
English (en)
Inventor
Koichi Sakamaki
Jun Fukuoka
Kazuya Saito
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of SG11201706280XA publication Critical patent/SG11201706280XA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7373—Non-magnetic single underlayer comprising chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201706280XA 2015-02-12 2016-02-02 Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME SG11201706280XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015025303 2015-02-12
PCT/JP2016/053020 WO2016129449A1 (ja) 2015-02-12 2016-02-02 Ｃｒ－Ｔｉ合金スパッタリングターゲット材およびその製造方法

Publications (1)

Publication Number Publication Date
SG11201706280XA true SG11201706280XA (en) 2017-09-28

Family

ID=56614648

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201706280XA SG11201706280XA (en) 2015-02-12 2016-02-02 Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME

Country Status (6)

Country Link
JP (1) JP6312009B2 (zh)
CN (1) CN107208259B (zh)
MY (1) MY180072A (zh)
SG (1) SG11201706280XA (zh)
TW (1) TW201631170A (zh)
WO (1) WO2016129449A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018131328A1 (ja) 2017-01-12 2018-07-19 日立金属株式会社 Ｃｒ合金ターゲット材
CN111438355B (zh) * 2020-04-13 2022-02-22 河北晟华新材料科技有限公司 一种铬铝硅靶材及其制备方法
CN112517917B (zh) * 2020-11-25 2023-04-18 河南东微电子材料有限公司 一种用于铬钛靶材的CrTiLa合金粉末的制备方法
CN112813326A (zh) * 2020-12-29 2021-05-18 有研工程技术研究院有限公司 一种钛铝铬合金靶及其制备方法
TWI769081B (zh) * 2021-09-17 2022-06-21 光洋應用材料科技股份有限公司 鉻鎳鈦合金靶材及其製法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002265B2 (ja) * 1990-12-12 2000-01-24 日本重化学工業株式会社 高純度金属クロムの製造方法
US5866067A (en) * 1997-03-24 1999-02-02 Sony Corporation And Materials Research Corporation High purity chromium metal by casting with controlled oxygen content
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6309595B1 (en) * 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
JP5854308B2 (ja) * 2010-05-06 2016-02-09 日立金属株式会社 Ｃｒ−Ｔｉ合金ターゲット材
JP5734599B2 (ja) * 2010-08-17 2015-06-17 山陽特殊製鋼株式会社 ＣｒＴｉ系合金スパッタリング用ターゲット材およびそれらを使用した垂直磁気記録媒体の製造方法
KR20140016996A (ko) * 2011-09-14 2014-02-10 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 구리망간 합금 스퍼터링 타깃

Also Published As

Publication number Publication date
CN107208259A (zh) 2017-09-26
MY180072A (en) 2020-11-20
JP6312009B2 (ja) 2018-04-18
CN107208259B (zh) 2019-08-13
TW201631170A (zh) 2016-09-01
TWI561638B (zh) 2016-12-11
WO2016129449A1 (ja) 2016-08-18
JPWO2016129449A1 (ja) 2017-11-24

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