MY180072A - Cr-ti alloy sputtering target material and method for producing same - Google Patents

Cr-ti alloy sputtering target material and method for producing same

Info

Publication number
MY180072A
MY180072A MYPI2017702896A MYPI2017702896A MY180072A MY 180072 A MY180072 A MY 180072A MY PI2017702896 A MYPI2017702896 A MY PI2017702896A MY PI2017702896 A MYPI2017702896 A MY PI2017702896A MY 180072 A MY180072 A MY 180072A
Authority
MY
Malaysia
Prior art keywords
target material
sputtering target
ppm
mass
alloy sputtering
Prior art date
Application number
MYPI2017702896A
Inventor
Koichi Sakamaki
Jun Fukuoka
Kazuya Saito
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of MY180072A publication Critical patent/MY180072A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7373—Non-magnetic single underlayer comprising chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

Provided are: a Cr-Ti alloy sputtering target material, which is capable of suppressing the generation of fine particles during sputtering; and a method for producing this Cr-Ti alloy sputtering target material. A Cr-Ti alloy sputtering target material which is represented by a composition formula Cr100-x-Tix ( 40sXs60) in terms of the atomic ratio, with the balance made up of unavoidable impurities that include Mg, Al, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total. A method for producing a Cr-Ti alloy sputtering target material, wherein a Ti powder that contains, as impurities, Mg, A1, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total and a Cr powder that contains, as impurities, Mg, A1, Si, Mn, Ni, Cu and Sn in an amount of from 1 ppm by mass to 50 ppm by mass (inclusive) in total are mixed with each other and sintered under pressure.
MYPI2017702896A 2015-02-12 2016-02-02 Cr-ti alloy sputtering target material and method for producing same MY180072A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015025303 2015-02-12
PCT/JP2016/053020 WO2016129449A1 (en) 2015-02-12 2016-02-02 Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME

Publications (1)

Publication Number Publication Date
MY180072A true MY180072A (en) 2020-11-20

Family

ID=56614648

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017702896A MY180072A (en) 2015-02-12 2016-02-02 Cr-ti alloy sputtering target material and method for producing same

Country Status (6)

Country Link
JP (1) JP6312009B2 (en)
CN (1) CN107208259B (en)
MY (1) MY180072A (en)
SG (1) SG11201706280XA (en)
TW (1) TW201631170A (en)
WO (1) WO2016129449A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3569731B1 (en) * 2017-01-12 2024-03-13 Proterial, Ltd. Cr alloy target material
CN111438355B (en) * 2020-04-13 2022-02-22 河北晟华新材料科技有限公司 Chromium-aluminum-silicon target material and preparation method thereof
CN112517917B (en) * 2020-11-25 2023-04-18 河南东微电子材料有限公司 Preparation method of CrTiLa alloy powder for chromium-titanium target material
CN112813326A (en) * 2020-12-29 2021-05-18 有研工程技术研究院有限公司 Titanium-aluminum-chromium alloy target and preparation method thereof
TWI769081B (en) * 2021-09-17 2022-06-21 光洋應用材料科技股份有限公司 Cr-ni-ti alloy target and method of preparing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3002265B2 (en) * 1990-12-12 2000-01-24 日本重化学工業株式会社 Method for producing high-purity chromium metal
US5866067A (en) * 1997-03-24 1999-02-02 Sony Corporation And Materials Research Corporation High purity chromium metal by casting with controlled oxygen content
US6309595B1 (en) * 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
JP5854308B2 (en) * 2010-05-06 2016-02-09 日立金属株式会社 Cr-Ti alloy target material
JP5734599B2 (en) * 2010-08-17 2015-06-17 山陽特殊製鋼株式会社 CrTi alloy sputtering target material and method for producing perpendicular magnetic recording medium using them
EP2837710B1 (en) * 2011-09-14 2019-05-15 JX Nippon Mining & Metals Corporation Production method for a high-purity copper-manganese-alloy sputtering target

Also Published As

Publication number Publication date
CN107208259A (en) 2017-09-26
CN107208259B (en) 2019-08-13
JP6312009B2 (en) 2018-04-18
WO2016129449A1 (en) 2016-08-18
SG11201706280XA (en) 2017-09-28
JPWO2016129449A1 (en) 2017-11-24
TW201631170A (en) 2016-09-01
TWI561638B (en) 2016-12-11

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