TWI560887B - Structure and method for sram finfet device - Google Patents

Structure and method for sram finfet device

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Publication number
TWI560887B
TWI560887B TW103136328A TW103136328A TWI560887B TW I560887 B TWI560887 B TW I560887B TW 103136328 A TW103136328 A TW 103136328A TW 103136328 A TW103136328 A TW 103136328A TW I560887 B TWI560887 B TW I560887B
Authority
TW
Taiwan
Prior art keywords
finfet device
sram finfet
sram
finfet
Prior art date
Application number
TW103136328A
Other languages
English (en)
Other versions
TW201541644A (zh
Inventor
Kuocheng Ching
Kahing Fung
Chihsheng Chang
Zhiqiang Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201541644A publication Critical patent/TW201541644A/zh
Application granted granted Critical
Publication of TWI560887B publication Critical patent/TWI560887B/zh

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    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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  • Engineering & Computer Science (AREA)
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  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
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TW103136328A 2014-04-25 2014-10-21 Structure and method for sram finfet device TWI560887B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/262,378 US9721955B2 (en) 2014-04-25 2014-04-25 Structure and method for SRAM FinFET device having an oxide feature

Publications (2)

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TW201541644A TW201541644A (zh) 2015-11-01
TWI560887B true TWI560887B (en) 2016-12-01

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US (4) US9721955B2 (zh)
KR (1) KR101672602B1 (zh)
CN (1) CN105023923B (zh)
DE (1) DE102015104604A1 (zh)
TW (1) TWI560887B (zh)

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US9721955B2 (en) 2014-04-25 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM FinFET device having an oxide feature
US9490340B2 (en) 2014-06-18 2016-11-08 Globalfoundries Inc. Methods of forming nanowire devices with doped extension regions and the resulting devices
US9431512B2 (en) * 2014-06-18 2016-08-30 Globalfoundries Inc. Methods of forming nanowire devices with spacers and the resulting devices
US9960273B2 (en) * 2015-11-16 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with substrate isolation and un-doped channel
US9627540B1 (en) * 2015-11-30 2017-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9882051B1 (en) 2016-09-15 2018-01-30 Qualcomm Incorporated Fin field effect transistors (FETs) (FinFETs) employing dielectric material layers to apply stress to channel regions
US10134760B2 (en) * 2017-01-10 2018-11-20 International Business Machines Corporation FinFETs with various fin height
US10411020B2 (en) 2017-08-31 2019-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
US10276718B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor
US11404423B2 (en) * 2018-04-19 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Fin-based strap cell structure for improving memory performance
US11257908B2 (en) * 2018-10-26 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with stacked semiconductor layers as channels
US10818674B2 (en) 2019-03-07 2020-10-27 Globalfoundries Inc. Structures and SRAM bit cells integrating complementary field-effect transistors
US11133224B2 (en) * 2019-09-27 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same

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