TWI560770B - - Google Patents

Info

Publication number
TWI560770B
TWI560770B TW101139495A TW101139495A TWI560770B TW I560770 B TWI560770 B TW I560770B TW 101139495 A TW101139495 A TW 101139495A TW 101139495 A TW101139495 A TW 101139495A TW I560770 B TWI560770 B TW I560770B
Authority
TW
Taiwan
Application number
TW101139495A
Other versions
TW201335991A (zh
Inventor
Tomoyuki Watanabe
Michikazu Morimoto
Mamoru Yakushiji
Tetsuo Ono
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201335991A publication Critical patent/TW201335991A/zh
Application granted granted Critical
Publication of TWI560770B publication Critical patent/TWI560770B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW101139495A 2011-10-31 2012-10-25 電漿蝕刻方法 TW201335991A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011238166 2011-10-31
JP2012229411A JP5932599B2 (ja) 2011-10-31 2012-10-17 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
TW201335991A TW201335991A (zh) 2013-09-01
TWI560770B true TWI560770B (zh) 2016-12-01

Family

ID=48610539

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105122740A TWI600083B (zh) 2011-10-31 2012-10-25 Plasma etching method
TW101139495A TW201335991A (zh) 2011-10-31 2012-10-25 電漿蝕刻方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105122740A TWI600083B (zh) 2011-10-31 2012-10-25 Plasma etching method

Country Status (4)

Country Link
US (2) US8741166B2 (zh)
JP (1) JP5932599B2 (zh)
KR (1) KR101405175B1 (zh)
TW (2) TWI600083B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289996B2 (ja) * 2014-05-14 2018-03-07 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US9911620B2 (en) * 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
JP6557588B2 (ja) * 2015-12-04 2019-08-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9673058B1 (en) 2016-03-14 2017-06-06 Lam Research Corporation Method for etching features in dielectric layers
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
JP6796519B2 (ja) * 2017-03-10 2020-12-09 東京エレクトロン株式会社 エッチング方法
FR3065576B1 (fr) 2017-04-25 2020-01-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de gravure d'une couche a base de sin
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
US10283370B1 (en) * 2018-03-01 2019-05-07 Applied Materials, Inc. Silicon addition for silicon nitride etching selectivity
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
US10515821B1 (en) 2018-06-26 2019-12-24 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US10741407B2 (en) 2018-10-19 2020-08-11 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3D NAND etch
JP7075537B2 (ja) * 2020-02-10 2022-05-25 株式会社日立ハイテク プラズマ処理方法
CN115244663A (zh) * 2020-02-28 2022-10-25 朗姆研究公司 高深宽比3d nand蚀刻的侧壁凹陷的减少

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
EP0516043A2 (en) * 1991-05-29 1992-12-02 Tokyo Electron Limited Dry etching method
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
WO2005071721A1 (en) * 2004-01-26 2005-08-04 Oxford Instruments Plasma Technology Limited Plasma etching process
TW200737345A (en) * 2006-02-10 2007-10-01 Tokyo Electron Ltd Method and system for selectively etching a dielectric material relative to silicon
TW201241915A (en) * 2011-03-04 2012-10-16 Tokyo Electron Ltd Method of etching silicon nitride films

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EP0424299A3 (en) * 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
JP3172340B2 (ja) * 1993-08-12 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
JP3681533B2 (ja) 1997-02-25 2005-08-10 富士通株式会社 窒化シリコン層のエッチング方法及び半導体装置の製造方法
US5786276A (en) * 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
JP3439455B2 (ja) * 2000-12-18 2003-08-25 Ｎｅｃエレクトロニクス株式会社 異方性ドライエッチング方法
US7098141B1 (en) * 2003-03-03 2006-08-29 Lam Research Corporation Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures
KR100780944B1 (ko) * 2005-10-12 2007-12-03 삼성전자주식회사 탄소함유막 식각 방법 및 이를 이용한 반도체 소자의 제조방법
JP5209859B2 (ja) 2006-09-19 2013-06-12 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US20110223770A1 (en) * 2010-03-15 2011-09-15 Lam Research Corporation Nitride plasma etch with highly tunable selectivity to oxide

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
EP0516043A2 (en) * 1991-05-29 1992-12-02 Tokyo Electron Limited Dry etching method
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
WO2005071721A1 (en) * 2004-01-26 2005-08-04 Oxford Instruments Plasma Technology Limited Plasma etching process
TW200737345A (en) * 2006-02-10 2007-10-01 Tokyo Electron Ltd Method and system for selectively etching a dielectric material relative to silicon
TW201241915A (en) * 2011-03-04 2012-10-16 Tokyo Electron Ltd Method of etching silicon nitride films

Also Published As

Publication number Publication date
KR20130047663A (ko) 2013-05-08
TWI600083B (zh) 2017-09-21
TW201335991A (zh) 2013-09-01
US8741166B2 (en) 2014-06-03
US8889024B2 (en) 2014-11-18
KR101405175B1 (ko) 2014-06-10
JP2013118359A (ja) 2013-06-13
US20130157470A1 (en) 2013-06-20
JP5932599B2 (ja) 2016-06-08
TW201639029A (zh) 2016-11-01
US20140220785A1 (en) 2014-08-07

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