TWI559479B - 半導體元件及其晶圓級封裝 - Google Patents

半導體元件及其晶圓級封裝 Download PDF

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TWI559479B
TWI559479B TW105107617A TW105107617A TWI559479B TW I559479 B TWI559479 B TW I559479B TW 105107617 A TW105107617 A TW 105107617A TW 105107617 A TW105107617 A TW 105107617A TW I559479 B TWI559479 B TW I559479B
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Taiwan
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wafer
pad
metal pad
metal
level package
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TW105107617A
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TW201635463A (zh
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許仕逸
謝東憲
周哲雅
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聯發科技股份有限公司
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Description

半導體元件及其晶圓級封裝
本發明係有關於一種半導體元件及封裝，具有微細的（fine）重佈線層（redistribution layer, RDL）間距（pitch）以及較佳的訊號完整性（signal integrity）。
為了降低成本及封裝尺寸，封裝業界已發展出各種不同的技術及方法。晶圓級封裝（Wafer Level Packaging，WLP）即是其中之一。所謂的晶圓級封裝，是在整片晶圓生產完成後，直接在晶圓上進行封裝測試，之後才切割製成單顆晶片。
例如，本領域習知的扇出型晶圓級封裝（Fan-Out Wafer Level Packaging, FOWLP），可以將並排組態的至少兩個積體電路（integrated circuit, IC）晶粒整合到一模封（molded）的半導體封裝中，該半導體封裝具有扇出式的重佈線層（redistribution layer，RDL）和後鈍化互連（post passivation interconnection，PPI）結構。兩個積體電路晶粒可以通過重佈線層（RDL）彼此互連。相較於現有的覆晶球柵陣列（flip-chip ball grid array, FCBGA）封裝，扇出型晶圓級封裝能提供較優的外形尺寸、引腳數及散熱性能。
然而，隨著越來越多的功能被整合到一單個的集體電路晶粒，晶粒至晶粒（die-to-die）訊號數急劇增加。增加的晶粒至晶粒訊號數導致重佈線層（RDL）的繞線空間受到擠壓。目前，由於各著墊（landing pad）具有相對較大的尺寸，因此，在兩個相鄰的著墊之間最多僅能容納三到四條訊號線路（signal trace）。如此一來，就沒有足夠的空間用於佈設屏蔽線路（shielding trace）。由於訊號間的串擾，這對高速應用的訊號完整性有不利地影響。
因此，本技術領域需要一種改良的晶圓級封裝，以具有微細的重佈線層間距和較佳的訊號完整性。
本發明的主要目的即在於提供一種改良的半導體元件及其封裝，具有微細的重佈線層間距，以及較佳的訊號完整性。
本發明一方面提出一種半導體元件，包括一積體電路晶粒，具有一主動表面，其中在該主動表面上設有至少一第一晶片上金屬墊（on-chip metal pad）以及一第二晶片上金屬墊，且該第一晶片上金屬墊鄰近該第二晶片上金屬墊；一鈍化層，位於該主動表面上，且覆蓋該第一晶片上金屬墊以及該第二晶片上金屬墊；以及一重佈線層結構，位於該鈍化層上。該重佈線層結構包括一第一著墊，位於該第一晶片上金屬墊的上方；一第一導孔，位於該重佈線層結構中，電連接該第一著墊與該第一晶片上金屬墊；一第二著墊，位於該第二晶片上金屬墊的上方；一第二導孔，位於該重佈線層結構中，電連接該第二著墊與該第二晶片上金屬墊；以及至少三條線路，設於該重佈線層結構上，並通過該第一著墊與該第二著墊之間的空間（space）。
本發明另一方面提出一種晶圓級封裝，包括一積體電路晶粒，具有一主動表面，其中在該主動表面上設有至少一第一晶片上金屬墊以及一第二晶片上金屬墊，且該第一晶片上金屬墊鄰近該第二晶片上金屬墊；一鈍化層，位於該主動表面上，且覆蓋該第一晶片上金屬墊以及該第二晶片上金屬墊；一成型材料，包覆除該主動表面外的該積體電路晶粒；以及一重佈線層結構，位於該鈍化層以及該成型材料上。該重佈線層結構包括一第一著墊，位於該第一晶片上金屬墊的上方；一第一導孔，位於該重佈線層結構中，電連接該第一著墊與該第一晶片上金屬墊；一第二著墊，位於該第二晶片上金屬墊的上方；一第二導孔，位於該重佈線層結構中，電連接該第二著墊與該第二晶片上金屬墊；以及至少三條線路，位於該重佈線層結構上，並通過該第一著墊與該第二著墊之間的空間。
為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉較佳實施方式，並配合所附圖式，作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用，並非用來對本發明加以限制者。
在以下詳細描述中，請參考附圖，這些附圖構成本揭露書的一部分，其用來輔助說明並例示本發明的具體實施方案。這些實施方案被詳細地描述以使所屬領域具有通常知識者能夠實踐本發明。當然，其他實施例也可以被利用，且在不脫離本發明的範圍下，可以做出結構上的變化。
因此，以下的詳細描述，不應被視為具有限制意義，並且本發明的範圍應由所附申請專利範圍所定義，其發明內容應同時考量等效物的全部範圍。
本發明的一個或多個實施方案將參照附圖描述，其中以相同標號來表示相同元件，且其中例示的結構不一定按比例繪製。以下，術語“裸晶”、“晶片”、“晶粒”、“半導體晶片”和“半導體裸晶”在整個說明書中係可互換使用。
第1圖為依據本發明一實施例示出的一種示例性的半導體元件封裝的剖面示意圖。半導體元件封裝1可以是一扇出型晶圓級封裝（FOWLP），具有被模封的複數個積體電路（IC）晶粒，該複數個集體電路晶粒以並排組態排列，但不限於此。雖然圖中示出的係複數個晶粒（multi-die）的晶圓級封裝，但所屬領域具有通常知識者應理解本發明亦可應用於單個晶粒（single-die）的封裝。可以理解的是，半導體元件封裝1也可被理解為一半導體元件，但應當說明的是，對於半導體元件的情形，可以不包括成型材料20，其中，成型材料20用於封裝半導體元件中所包括的集體電路晶粒。在一些實施例中，集體電路晶粒的主動表面未被成型材料20包覆（encapsulate）。
如第1圖所示，該示例性的半導體元件封裝1包括以並排組態排列的兩個積體電路晶粒102及104，且積體電路晶粒102及104被一成型材料（molding material）20模封。例如，成型材料20可以是環氧樹脂（epoxy）、樹脂（resin）或其他合適的成型材料。積體電路晶粒102及104分別具有主動表面（active surface）102a及104a。在此示例圖中，主動表面102a及104a均朝下。在主動表面102a及104a上分別設有晶片上金屬墊（on-chip metal pad）122及142，例如鋁墊，如晶片上金屬墊122和/或142可以為鋁墊。這些晶片上金屬墊122及142分別被鈍化層120及140所覆蓋。根據所示出的實施例，鈍化層120及140可以包括有氧化矽、氮化矽、氮氧化矽、未摻雜矽玻璃，或其組合。
可選地，可分別在鈍化層120及140上直接形成介電覆蓋層（dielectric capping layer）124及144，從而提供一平坦的主表面，該主表面與圍繞在這兩個積體電路晶粒102及104附近的成型材料20的一表面齊平。根據所示出的實施例，介電覆蓋層124及144分別直接接觸到鈍化層120及140。根據所示出的實施例，介電覆蓋層124及144可以包括高分子材料，例如聚醯亞胺（polyimide）、層疊膠帶（laminating tape）、晶背研磨膠帶（backside grinding tape）、黏著劑（adhesive）、紫外線膠帶（UV tap）等等。
雖然在圖中沒有示出，但可以理解的是，積體電路晶粒102和104還可以分別包括在鈍化層120及140下方的金屬互連結構。例如，前述金屬互連結構可以包括，但不限於，分佈或鑲嵌在介電覆蓋層內的超低k介電層（ultra-low-k dielectric layer）、層間介質（inter-layer dielectric, ILD）層，以及多層銅金屬層。所述金屬互連結構可以形成在一半導體基板上（如，矽基板），複數個半導體電路元件（如，晶體管）可位於該半導體基板中及其上方。為簡化說明，此處省略鈍化層120和140下方的內部結構細節。
在介電覆蓋層124、144以及鈍化層120、140中，可以形成開孔（opening）。各開孔使相應的晶片上金屬墊122及142的上表面（top surface）的一部分顯露出來。在這些開孔內，可以形成導電柱凸塊（Conductive pillar bump）126及146，例如銅柱凸塊或銅接觸栓（copper contact plug），以及，導電柱凸塊126及146分別填補（fill up）晶片上金屬墊122及142上的開孔，從而，導電柱凸塊126及146分別與晶片上金屬墊122及142相接觸。需理解的是，在其它實施例中，可以省略介電覆蓋層124、144以及導電柱凸柱塊126、146。
在介電覆蓋層124、144與圍繞兩個積體電路晶粒102、104的成型材料20上，形成有一重佈線層（RDL）結構200，通常用做訊號扇出目的。根據所示出的實施例，舉例來說，重佈線層結構200可以包括複數個絕緣層（insulating layer）201、203、205、207以及設於複數個絕緣層201、203、205、207中及其上的複數個金屬層202、204、206。絕緣層201、203、205及207可以包含有機材料或高分子材料，包括，但不限於，聚醯亞胺（polyimide）、苯環丁烯（benzocyclobutene, BCB）、聚苯惡唑（polybenzoxazole，PBO）等等。在其它實施例中，絕緣層201、203、205及207可以包含無機材料。在一些實施例中，重佈線層結構200的底面上可設有複數個錫球250，用於進一步與外部連接。在本發明實施例中，至少三條線路（trace）位於重佈線層結構上，這些線路通過第一著墊與第二著墊之間的空間。例如，在第3圖所示的示例中，五條線路位於重佈線層結構400上。
舉例來說，金屬層202可包括電路特徵（circuit feature），如設在每個導電柱凸塊126和146上方的導孔202a、著墊202b以及一細（fine）線路202c，在絕緣層201上的細線路202c延伸並連通於導孔與著墊之間，或著墊與著墊之間。在第1圖中，由虛線310所指出的示例性區域可表示晶粒至晶粒（或，晶片至晶片）訊號發送路徑，其包括但不限於晶粒至晶粒金屬墊122a和142a、導孔202a、位於金屬墊及導孔上的著墊202b，以及著墊202b之間的細線路202c。在一些實施例中，著墊以及導孔可以由銅組成。
如前文所述，隨著越來越多的功能被合併到一個單一的積體電路晶粒中，晶粒至晶粒訊號數急劇增加，導致重佈線層的繞線空間受到擠壓。目前，在兩個相鄰著墊之間最多僅能容納三到四條訊號線路，這是由於各著墊具有相對較大的尺寸。如此一來，就沒有足夠的空間用於佈設遮罩線路。這對於高速應用的訊號完整性有不利地影響，因為會有訊號間的串擾。本發明解決了這個問題。
請參考第2圖及第3圖。第2圖為根據本發明一實施例所繪示的扇出型晶圓級封裝（FOWLP）的部分重佈線層結構的透視平面圖。第3圖係沿第2圖中I-I’線截取的示意剖面圖。為方便理解，上述實施例中的晶片上金屬墊以鋁墊（AP）為例，導孔以銅導孔為例，但應當說明的是，本發明並不限於此。如第2圖及第3圖所示，製作在一積體電路晶粒100上的重佈線層結構400可以包括兩個相鄰的晶片上（on-chip）鋁墊（aluminum pad，AP），以虛線301表示。鋁墊（AP）可以被鈍化層410覆蓋。在第3圖所示出的實施例中，鈍化層410可以包括氧化矽、氮化矽、氮氧化矽、未摻雜的矽玻璃，或它們的任意組合。在其它實施例中，鈍化層410可以包括有機材料，例如聚醯亞胺等。但是應該理解的是，為進一步連接，如第1圖中所示，可以在鈍化層410上形成更多的電介質層（dielectric layer）和金屬層。
在鈍化層410中可以形成開孔。每一個開孔可以暴露相應鋁墊（AP）的頂面的（約略）中央部分。銅導孔（V），以虛線302表示，可直接形成在每個鋁墊（AP）上。在每個銅導孔（Ⅴ）上可以直接形成著墊（LP）。根據所示出的實施例，至少五條細線路S、G、S、G、S可通過兩個相鄰著墊（LP）之間的空間。五條細線路S、G、S、G、S可以包括銅線路，但並不限於此。類似地，從該晶圓級封裝的上面（或頂部）看（或在俯視圖中），銅導孔（V）可具有矩形或卵形輪廓。此外，每個銅導孔（V）的長寬比可介於1~3之間，更特別地，介於2~3之間。
根據所示出的實施例，從該晶圓級封裝的上面（或頂部）看時，每個鋁墊（AP）或其中至少一個鋁墊可呈矩形或呈卵形（為方便說明，以每個鋁墊呈矩形或呈卵形為例）。每個鋁墊（AP）可具有縱向長度L1和寬度W1。根據所示出的實施例，每個鋁墊（AP）的縱向方向是平形於參考y軸，其可以是如第1圖中的兩個積體電路晶粒102和104之間的訊號傳輸方向（晶粒至晶粒方向）。每個鋁墊（AP）的長寬比（aspect ratio）被定義為L1/W1，其可介於1〜3之間，更特別地，介於2~3之間。舉例來說，寬度W1可以是二分之一的縱向長度L1，但不限於此。在一些實施例中，寬度W1可以小於二分之一的縱向長度L1，但並不限於此。舉例來說，縱向長度L1的範圍可以在35〜55微米，例如45微米，寬度W1的範圍可以在15〜30微米，例如20微米。
根據所示出的實施例，從該晶圓級封裝的上面（或頂部）看時，每個著墊（LP）或其中至少一個著墊呈矩形或卵形（為方便說明，以每個著墊呈矩形或呈卵形為例）。每個著墊（LP）的縱向方向是平形於參考y軸，其可以是如第1圖中的兩個積體電路晶粒102和104之間的訊號傳輸方向（晶粒至晶粒方向）。每個著墊（LP）的長寬比被定義為L2/W2，其可介於1〜3之間，更特別地，介於2~3之間。寬度W2可以是二分之一的縱向長度L2，但不限於此。在一些實施例中，寬度W2可以小於二分之一的縱向長度L2，但並不限於此。舉例來說，縱向長度L2的範圍可以在30〜50微米，例如40微米，寬度W2的範圍可以在10〜25微米，例如18微米。
根據所示出的實施例，兩個相鄰著墊（LP）之間的五條細線路S、G、S、G、S係沿參考y軸（或晶粒至晶粒方向）延伸的，用來傳送晶粒至晶粒訊號。根據所示出的實施例，兩條細線路G可以傳輸一接地訊號，且可以用作兩條相鄰高速訊號線路（例如，圖中標示為S的細線路）之間的遮罩線路。術語“SGS”可以指一電路佈局結構，其包括一仲介參考（例如接地）線路G，線路G被一對高速或高頻訊號線路S（例如，操作在大於1Gb/s的速度上）夾著（sandwiched）。術語“SGSGS”可以指兩條仲介參考線路G介於三條高速或高頻訊號線路S之間，換言之，仲介參考線路G設置在相鄰的高頻信號線路S之間。通過提供這樣的結構，可以進一步地顯著改善（提高）訊號完整性。
根據所示出的實施例，鈍化層410下的重佈線層還可以設在兩個鋁墊（AP）之間。舉例來說，在第3圖中，可以提供至少四條鋁線路（AT），沿參考y軸（或晶粒至晶粒方向）延伸。本發明的優點在於，因為著墊（LP）和/或鋁墊（AP），特別是位於第1圖中的虛線310所示的區域內者，從封裝的上面（或頂部）看時（或在俯視圖中）呈矩形或卵形，因此它們之間的空間被加寬，從而可容納更多的重佈線層線路。在第2圖、第3圖中所示的SGSGS線路組態能提高在重佈線層層級的信號完整性。
第4圖為根據本發明另一實施例所繪示的重佈線層中的部分鋁墊、銅導孔、線路及著墊的透視平面圖。如第4圖所示，相對於第2圖中的著墊，第4圖中的著墊（LP）具有更纖細的形狀，它具有縱向長度L3，其大於L2；以及寬度W3，其比W2小。由於第4圖中的著墊（LP）具有更纖細的形狀，兩個相鄰的著墊（LP）之間的空間被進一步拓寬。因此，更多的重佈線層線路可以佈置在該空間，從而提高信號完整性。例如，第4圖中例示七條線路，標記為SGSGSGS，包括四條高速訊號線路和三條參考或接地線路。根據所示出的實施例，第4圖中的著墊（LP）與第2圖中所示的著墊（LP）基本上具有相同的表面積。在一些情況下，銅導孔（V）的部分邊界，其以虛線302標示，可與著墊（LP）的週緣或邊界部分重疊。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1 半導體元件封裝 20 成型材料 100 積體電路晶粒 102、104 積體電路晶粒 102a、104a 主動表面 120、140 鈍化層 122、142 晶片上金屬墊 122a、142a 晶粒至晶粒金屬墊 124、144 介電覆蓋層 126、146 導電柱凸塊 200 重佈線層 201、203、205、207 絕緣層 202、204、206 金屬層 202a 導孔 202b 著墊 202c 線路 301、302、310 虛線 400 重佈線層結構 410 鈍化層 AP 鋁墊 AT 鋁線路 V銅導孔 LP 著墊 S 高速訊號線路 G 中介參考線路 L1、L2、L3 縱向長度 W1、W2、W3 寬度 250 錫球
附圖係提供本發明更進一步的了解，並構成本說明書的一部分。附圖與說明書內容一同闡述之本發明實施例係有助於解釋本發明的原理原則。在附圖中： 第1圖為依據本發明一實施例示出的一種扇出型晶圓級封裝的剖面示意圖； 第2圖為根據本發明一實施例所繪示的重佈線層結構中的部分鋁墊、銅導孔、線路及著墊的透視平面圖； 第3圖係沿第2圖中I-I’線截取的示意剖面圖； 第4圖為根據本發明另一實施例所繪示的重佈線層中的部分鋁墊、銅導孔、線路及著墊的透視平面圖。
100 積體電路晶粒 400 重佈線層結構 410 鈍化層 AP 鋁墊 AT 鋁線路 V銅導孔 LP 著墊 S 高速訊號線路 G 中介參考線路

Claims (28)

  1. 一種半導體元件，包括： 一積體電路晶粒，具有一主動表面，其中在該主動表面上設有至少一第一晶片上金屬墊以及一第二晶片上金屬墊，且該第一晶片上金屬墊鄰近該第二晶片上金屬墊； 一鈍化層，位於該主動表面上，且覆蓋該第一晶片上金屬墊以及該第二晶片上金屬墊；以及 一重佈線層結構，位於該鈍化層上，該重佈線層結構包括： 一第一著墊，位於該第一晶片上金屬墊的上方； 一第一導孔，位於該重佈線層結構中，電連接該第一著墊與該第一晶片上金屬墊； 一第二著墊，位於該第二晶片上金屬墊的上方； 一第二導孔，位於該重佈線層結構中，電連接該第二著墊與該第二晶片上金屬墊；以及 至少三條線路，位於該重佈線層結構上，並通過該第一著墊與該第二著墊之間的空間。
  2. 如申請專利範圍第1項所述的半導體元件，其中，該第一晶片上金屬墊和該第二晶片上金屬墊中的至少一個為一鋁墊。
  3. 如申請專利範圍第1項所述的半導體元件，其中，該鈍化層包含氧化矽、氮化矽、氮氧化矽、未摻雜矽玻璃，或其任意組合。
  4. 如申請專利範圍第1項所述的半導體元件，其中該第一著墊以及該第一導孔由銅組成；和/或，該第二著墊以及該第二導孔由銅組成。
  5. 如申請專利範圍第1項所述的半導體元件，其中，該至少三條線路包括兩條中介參考線路G以及三條高速訊號線路S，其中該兩條中介參考線路G介於該三條高速訊號線路S之間，從而構成一SGSGS重佈線層線路組態。
  6. 如申請專利範圍第5項所述的半導體元件，其中，該高速訊號線路S係在大於1Gb/s的速度下操作。
  7. 如申請專利範圍第5項所述的半導體元件，其中，該兩條中介參考線路G傳輸一接地訊號。
  8. 如申請專利範圍第1項所述的半導體元件，其中，從該半導體元件的頂部看時，該第一著墊以及該第二著墊中的至少一個具有一矩形或卵形輪廓。
  9. 如申請專利範圍第8項所述的半導體元件，其中，該第一著墊以及該第二著墊的長寬比均介於1至3之間。
  10. 如申請專利範圍第1項所述的半導體元件，其中，從該半導體元件的頂部看時，該第一晶片上金屬墊以及該第二晶片上金屬墊中的至少一個具有一矩形或卵形輪廓。
  11. 如申請專利範圍第10項所述的半導體元件，其中，該第一晶片上金屬墊以及該第二晶片上金屬墊的長寬比均介於1至3之間。
  12. 如申請專利範圍第10項所述的半導體元件，其中，該第一晶片上金屬墊以及該第二晶片上金屬墊之間具有至少四條沿著一晶粒至晶粒方向佈設的鋁線路。
  13. 如申請專利範圍第1項所述的半導體元件，其中，該鈍化層在該第一晶片上金屬墊以及該第二晶片上金屬墊的對應位置上分別設有一開孔，以使該第一晶片上金屬墊以及該第二晶片上金屬墊的一部分從該鈍化層顯露出來。
  14. 如申請專利範圍第13項所述的半導體元件，其中，該開孔內形成有一導電柱凸塊，以電連接相應的晶片上金屬墊和導孔。
  15. 一種晶圓級封裝，包括： 一積體電路晶粒，具有一主動表面，其中在該主動表面上設有至少一第一晶片上金屬墊以及一第二晶片上金屬墊，且該第一晶片上金屬墊鄰近該第二晶片上金屬墊； 一鈍化層，位於該主動表面上，且覆蓋該第一晶片上金屬墊以及該第二晶片上金屬墊； 一成型材料，包覆除該主動表面外的該積體電路晶粒；以及 一重佈線層結構，位於該鈍化層以及該成型材料上，該重佈線層結構包括： 一第一著墊，位於該第一晶片上金屬墊的上方； 一第一導孔，位於該重佈線層結構中，電連接該第一著墊與該第一晶片上金屬墊； 一第二著墊，位於該第二晶片上金屬墊的上方； 一第二導孔，位於該重佈線層結構中，電連接該第二著墊與該第二晶片上金屬墊；以及 至少三條線路，位於該重佈線層結構上，並通過該第一著墊與該第二著墊之間的空間。
  16. 如申請專利範圍第15項所述的晶圓級封裝，其中，該第一晶片上金屬墊和該第二晶片上金屬墊中的至少一個為一鋁墊。
  17. 如申請專利範圍第15項所述的晶圓級封裝，其中，該鈍化層包含氧化矽、氮化矽、氮氧化矽、未摻雜矽玻璃，或其任意組合。
  18. 如申請專利範圍第15項所述的晶圓級封裝，其中，該第一著墊以及該第一導孔由銅組成；和/或，該第二著墊以及該第二導孔由銅組成。
  19. 如申請專利範圍第15項所述的晶圓級封裝，其中，該至少三條線路包含兩條中介參考線路G以及三條高速訊號線路S，其中該兩條中介參考線路G介於該三條高速訊號線路S之間，如此構成一SGSGS重佈線層線路組態。
  20. 如申請專利範圍第19項所述的晶圓級封裝，其中，該高速訊號線路S係在大於1Gb/s的速度下操作。
  21. 如申請專利範圍第19項所述的晶圓級封裝，其中，該兩條中介參考線路G傳輸一接地訊號。
  22. 如申請專利範圍第15項所述的晶圓級封裝，其中，從該晶圓級封裝的頂部看時，該第一著墊以及該第二著墊中的至少一個具有一矩形或卵形輪廓。
  23. 如申請專利範圍第22項所述的晶圓級封裝，其中，該第一著墊以及該第二著墊的長寬比均介於1至3之間。
  24. 如申請專利範圍第15項所述的晶圓級封裝，其中，從該晶圓級封裝的頂部看時，該第一晶片上金屬墊以及該第二晶片上金屬墊中的至少一個具有一矩形或卵形輪廓。
  25. 如申請專利範圍第24項所述的晶圓級封裝，其中，該第一晶片上金屬墊以及該第二晶片上金屬墊的長寬比均介於1至3之間。
  26. 如申請專利範圍第24項所述的晶圓級封裝，其中，該第一晶片上金屬墊以及該第二晶片上金屬墊之間具有至少四條沿著一晶粒至晶粒方向佈設的鋁線路。
  27. 如申請專利範圍第15項所述的晶圓級封裝，其中，該鈍化層在該第一晶片上金屬墊以及該第二晶片上金屬墊的對應位置上分別設有一開孔，以使該第一晶片上金屬墊以及該第二晶片上金屬墊的一部分從該鈍化層顯露出來。
  28. 如申請專利範圍第27項所述的晶圓級封裝，其中，該開孔內形成有一導電柱凸塊，以電連接相應的晶片上金屬墊和導孔。
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