TWI557934B - 半導體光電元件 - Google Patents

半導體光電元件 Download PDF

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Publication number
TWI557934B
TWI557934B TW100112126A TW100112126A TWI557934B TW I557934 B TWI557934 B TW I557934B TW 100112126 A TW100112126 A TW 100112126A TW 100112126 A TW100112126 A TW 100112126A TW I557934 B TWI557934 B TW I557934B
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TW
Taiwan
Prior art keywords
semiconductor
layer
material layer
conductive
semiconductor material
Prior art date
Application number
TW100112126A
Other languages
English (en)
Chinese (zh)
Other versions
TW201212279A (en
Inventor
王心盈
陳怡名
徐子傑
陳吉興
張湘苓
謝明勳
許嘉良
陳昭興
姚久琳
黃建富
劉欣茂
鍾健凱
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Priority to US13/226,095 priority Critical patent/US9455242B2/en
Publication of TW201212279A publication Critical patent/TW201212279A/zh
Application granted granted Critical
Publication of TWI557934B publication Critical patent/TWI557934B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW100112126A 2010-09-06 2011-04-06 半導體光電元件 TWI557934B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/226,095 US9455242B2 (en) 2010-09-06 2011-09-06 Semiconductor optoelectronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38025810P 2010-09-06 2010-09-06

Publications (2)

Publication Number Publication Date
TW201212279A TW201212279A (en) 2012-03-16
TWI557934B true TWI557934B (zh) 2016-11-11

Family

ID=45595554

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100112126A TWI557934B (zh) 2010-09-06 2011-04-06 半導體光電元件
TW100131891A TWI539622B (zh) 2010-09-06 2011-09-02 發光裝置及其製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW100131891A TWI539622B (zh) 2010-09-06 2011-09-02 發光裝置及其製造方法

Country Status (6)

Country Link
US (2) US8592827B2 (enExample)
JP (1) JP6038436B2 (enExample)
KR (1) KR20120025433A (enExample)
CN (1) CN102386201B (enExample)
DE (1) DE102011053274B4 (enExample)
TW (2) TWI557934B (enExample)

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TWI446578B (zh) * 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
TWI488295B (zh) * 2012-05-25 2015-06-11 Phostek Inc 發光二極體陣列與其形成方法
TWI466328B (zh) * 2012-06-11 2014-12-21 Ritedia Corp 覆晶式發光二極體及其製法與應用
JP2014096455A (ja) * 2012-11-08 2014-05-22 Stanley Electric Co Ltd 半導体発光素子アレイおよび車両用灯具
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
TWI499091B (zh) * 2012-12-18 2015-09-01 新世紀光電股份有限公司 發光裝置
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
KR20140140399A (ko) * 2013-05-29 2014-12-09 서울바이오시스 주식회사 복수개의 발광 요소들을 갖는 발광다이오드 및 그것을 제조하는 방법
DE112013007192B4 (de) * 2013-06-26 2024-05-23 Epistar Corporation Lichtemittierende Vorrichtung
TWI566427B (zh) * 2013-07-05 2017-01-11 晶元光電股份有限公司 發光元件及其製造方法
CN105324857B (zh) * 2013-07-05 2019-01-11 晶元光电股份有限公司 发光元件的制造方法
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR101767078B1 (ko) 2013-07-29 2017-08-10 에피스타 코포레이션 반도체 소자를 선택적으로 전이하는 방법
TWI603390B (zh) * 2013-07-29 2017-10-21 晶元光電股份有限公司 選擇性轉移半導體元件的方法
US11329195B2 (en) 2013-08-27 2022-05-10 Epistar Corporation Semiconductor light-emitting device
US9461209B2 (en) * 2013-11-27 2016-10-04 Epistar Corporation Semiconductor light-emitting device
CN110047865B (zh) * 2013-09-03 2024-02-23 晶元光电股份有限公司 具有多个发光结构的发光元件
KR102378952B1 (ko) * 2015-08-27 2022-03-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
CN106784276B (zh) * 2016-11-30 2019-04-12 陕西科技大学 一种金刚石热沉GaN基异侧电极LED制作方法
US20200243736A1 (en) * 2017-01-12 2020-07-30 Enkris Semiconductor, Inc. Semiconductor device and fabrication method for the same
WO2018160858A1 (en) * 2017-03-01 2018-09-07 Phase Sensitive Innovations, Inc. Diamond-backed photodiodes, diamond-sandwiched photodiodes, photodiode systems and related methods of manufacture
CN109768134A (zh) * 2019-01-28 2019-05-17 华引芯（武汉）科技有限公司 一种发光高效率反转垂直结构高压芯片及其制备方法
CN112687780B (zh) * 2020-12-29 2022-02-11 厦门三安光电有限公司 一种高压发光二极管芯片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1835253A (zh) * 2005-03-17 2006-09-20 日立电线株式会社 发光二极管阵列

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JP3717196B2 (ja) * 1994-07-19 2005-11-16 豊田合成株式会社 発光素子
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US7221044B2 (en) * 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
KR100782129B1 (ko) * 2006-05-25 2007-12-05 한국광기술원 웨이퍼 본딩 공정을 이용한 실리콘 기반 발광다이오드제조방법
WO2008031280A1 (fr) * 2006-09-13 2008-03-20 Helio Optoelectronics Corporation Structure de diode électroluminescente
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR20100028412A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 나노 막대를 이용한 발광 다이오드 및 그 제조 방법
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
DE102008062933B4 (de) * 2008-12-23 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Projektionsvorrichtung
KR100986570B1 (ko) * 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
JP6038436B2 (ja) 2016-12-07
TW201212280A (en) 2012-03-16
US8847248B2 (en) 2014-09-30
CN102386201B (zh) 2016-07-06
TWI539622B (zh) 2016-06-21
TW201212279A (en) 2012-03-16
KR20120025433A (ko) 2012-03-15
US8592827B2 (en) 2013-11-26
JP2012060115A (ja) 2012-03-22
DE102011053274B4 (de) 2021-03-18
CN102386201A (zh) 2012-03-21
DE102011053274A1 (de) 2012-03-08
US20120056212A1 (en) 2012-03-08
US20140077238A1 (en) 2014-03-20

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