JP2012060115A - 発光装置及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000638 solvent extraction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 18
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910017518 Cu Zn Inorganic materials 0.000 description 3
- 229910017755 Cu-Sn Inorganic materials 0.000 description 3
- 229910017752 Cu-Zn Inorganic materials 0.000 description 3
- 229910017927 Cu—Sn Inorganic materials 0.000 description 3
- 229910017943 Cu—Zn Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910018100 Ni-Sn Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 229910018532 Ni—Sn Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 3
- -1 for example Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Led Devices (AREA)
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Abstract
【解決手段】発光装置は、キャリアと、前記キャリアの上に形成され、且つ、前記キャリアに面する第一表面と、前記第一表面に相対する第二表面と、前記第一表面と前記第二表面との間に介在する能動層とを有する発光構造と、前記第一表面から延伸して前記能動層を通過し、複数の発光素子を区分する複数の第一トレンチと、前記第二表面から延伸して前記複数の発光素子の各々の前記能動層を通過する複数の第二トレンチと、を含む。
【選択図】図2H
Description
lift-off)、及び/又は、エッチングなどの方法で除去される。
以上、本発明の好ましい実施形態を説明したが、本発明はこの実施形態に限定されず、本発明の趣旨を離脱しない限り、本発明に対するあらゆる変更は本発明の範囲に属する。
12 発光スタック層
121 p型半導体層
122 発光層
123 n型半導体層
14 トレンチ
16 第二電極
18 第一電極
19 金属導線
201 基板
202 第一半導体層
204 能動層
206 第二半導体層
208 発光構造
210 第一トレンチ
212 発光素子
214 絶縁層
216 導電構造
218 キャリア
220 第二トレンチ
222 絶縁層
223 接合層
223a ベース部
223b 突出部
224 導電構造
226 第一接合パッド
227 第二接合パッド
Claims (19)
- 発光装置であって、
キャリアと、
前記キャリアの上に形成され、且つ、前記キャリアに面する第一表面と、前記第一表面に相対する第二表面と、前記第一表面と前記第二表面との間に介在する能動層とを有する発光構造と、
前記第一表面から延伸して前記能動層を通過し、複数の発光素子を区分する複数の第一トレンチと、
前記第二表面から延伸して前記複数の発光素子の前記能動層を通過する複数の第二トレンチと、
を含む、発光装置。 - 前記複数の発光素子と前記キャリアとの間に形成される接合層をさらに含む、
請求項1に記載の発光装置。 - 前記接合層は、前記キャリアに接続されるベース部と、前記複数の第一トレンチにそれぞれ対応する複数の突出部とを含む、
請求項2に記載の発光装置。 - 前記接合層と前記複数の発光素子との間に位置する絶縁層をさらに含む、
請求項2に記載の発光装置。 - 前記絶縁層と前記接合層との間に位置し、前記複数の発光素子に電気接続される導電構造をさらに含む、
請求項4に記載の発光装置。 - 前記複数の発光素子のうち何れか一つは、第一半導体層と、第二半導体層とを含み、前記導電構造は、前記複数の発光素子のうち、一つの第一半導体層と、もう一つの第二半導体層との間に接続される、
請求項5に記載の発光装置。 - 前記発光素子の前記第一表面に形成され、また前記導電構造に接触する接点をさらに含む、
請求項6に記載の発光装置。 - 前記複数の第二トレンチのうち何れか一つは、側壁に形成される絶縁層を含む、
請求項1に記載の発光装置。 - 前記第二トレンチに充填され、且つ前記第二トレンチの底部に接触する少なくとも一つの導電構造をさらに含む、
請求項8に記載の発光装置。 - 前記発光素子は、前記キャリアと前記能動層との間に介在する第一半導体層と、前記能動層の、前記第一半導体層に相対する他方側に位置する第二半導体層とを含み、前記第一トレンチは、前記第一半導体層から前記第二半導体層まで延伸し、且つ前記第二半導体層を露出させ、前記第二トレンチは、前記第二半導体層を通過し、且つ前記第一半導体層を露出させる、
請求項1に記載の発光装置。 - 発光装置の製造方法であって、
基板を提供するステップと、
前記基板に発光構造を形成するステップであって、前記発光構造は、第一表面と、前記基板に近接する第二表面とを含むステップと、
前記発光構造の前記第一表面から延伸する複数の第一トレンチを形成し、複数の発光素子を区分するステップと、
前記基板を除去して前記第二表面を露出させるステップと、
前記第二表面から複数の第二トレンチを形成するステップと、
を含む、製造方法。 - 前記基板を除去する前に、前記複数の発光素子の前記第一表面にキャリアを付着するステップをさらに含む、
請求項11に記載の製造方法。 - 前記第一トレンチの側壁に誘電層を形成し、また、前記誘電層に前記複数の発光素子と接続される複数の導線を共形的に形成するステップをさらに含む、
請求項12に記載の製造方法。 - 前記複数の発光素子と前記キャリアとの間に接合層を形成するステップをさらに含む、
請求項12に記載の製造方法。 - 前記複数の第二トレンチを形成した後に、絶縁層を前記複数の第二トレンチに充填するステップをさらに含む、
請求項11に記載の製造方法。 - 前記第二トレンチ中に導電構造を形成するステップをさらに含み、
前記導電構造は、前記絶縁層を以って前記発光素子と絶縁され、また、前記第二トレンチの底部に接触する、
請求項11に記載の製造方法。 - 前記発光構造は、前記基板に形成される第一半導体層と、前記第一半導体層に形成される能動層と、前記能動層に形成される第二半導体層と、を含み、一部の前記第二半導体層及び前記能動層を除去し、前記第一半導体層を露出させることにより、前記第一トレンチを形成し、一部の前記第一半導体層及び前記能動層を除去し、前記第二半導体層を露出させることにより、前記第二トレンチを形成する、
請求項16に記載の製造方法。 - 前記発光構造は、前記基板に形成される第一半導体層と、前記第一半導体層に形成される能動層と、前記能動層に形成される第二半導体層と、を含み、一部の前記第二半導体層及び前記能動層を除去し、前記第一半導体層を露出させることにより、前記第一トレンチを形成し、一部の前記第一半導体層を除去し、前記第一トレンチの底部の一部を露出させることにより、前記第二トレンチを形成する、
請求項16に記載の製造方法。 - 発光装置であって、
キャリアと、
前記キャリアの上に形成され、且つ、前記キャリアに面する第一表面と、前記第一表面に相対する第二表面と、前記第一表面と前記第二表面との間に介在する能動層とを有する発光構造と、
前記第一表面から延伸して前記能動層を通過する複数の第一トレンチと、
前記発光構造の前記第二表面から延伸する複数の第二トレンチと、
を含み、
前記第二トレンチは、前記第一トレンチの底部の一部を露出させる、発光装置。
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US38025810P | 2010-09-06 | 2010-09-06 | |
US61/380,258 | 2010-09-06 |
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JP2012060115A true JP2012060115A (ja) | 2012-03-22 |
JP2012060115A5 JP2012060115A5 (ja) | 2014-10-16 |
JP6038436B2 JP6038436B2 (ja) | 2016-12-07 |
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US (2) | US8592827B2 (ja) |
JP (1) | JP6038436B2 (ja) |
KR (1) | KR20120025433A (ja) |
CN (1) | CN102386201B (ja) |
DE (1) | DE102011053274B4 (ja) |
TW (2) | TWI557934B (ja) |
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DE102011053274B4 (de) | 2021-03-18 |
JP6038436B2 (ja) | 2016-12-07 |
TW201212279A (en) | 2012-03-16 |
DE102011053274A1 (de) | 2012-03-08 |
US20120056212A1 (en) | 2012-03-08 |
CN102386201B (zh) | 2016-07-06 |
CN102386201A (zh) | 2012-03-21 |
US20140077238A1 (en) | 2014-03-20 |
TWI539622B (zh) | 2016-06-21 |
US8847248B2 (en) | 2014-09-30 |
TW201212280A (en) | 2012-03-16 |
KR20120025433A (ko) | 2012-03-15 |
US8592827B2 (en) | 2013-11-26 |
TWI557934B (zh) | 2016-11-11 |
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