TWI549249B - 半導體封裝及形成一半導體封裝之方法 - Google Patents

半導體封裝及形成一半導體封裝之方法 Download PDF

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TWI549249B
TWI549249B TW102128589A TW102128589A TWI549249B TW I549249 B TWI549249 B TW I549249B TW 102128589 A TW102128589 A TW 102128589A TW 102128589 A TW102128589 A TW 102128589A TW I549249 B TWI549249 B TW I549249B
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package
interconnect structure
layer
semiconductor
semiconductor die
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TW102128589A
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TW201409641A (zh
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林俊成
張進傳
洪瑞斌
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台灣積體電路製造股份有限公司
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Description

半導體封裝及形成一半導體封裝之方法
本發明是有關於一種半導體封裝，特別是有關於一種形成一半導體封裝之方法。
隨著半導體技術之持續進展，半導體晶片/晶粒是越來越小。同時，更多的功能是被整合至半導體晶粒之中，如上所述，半導體晶粒具有越來越多數目之輸入/輸出(I/O)墊，這些輸入/輸出(I/O)墊是被封裝至較小的區域之中。因此，半導體晶粒之封裝已成為越來越重要以及越來越具挑戰性。
本發明基本上採用如下所詳述之特徵以為了要解決上述之問題。
本發明之一實施例提供一種半導體封裝，其包括一內連線結構，具有一重分佈層；一半導體晶粒，係藉由第一複數個接合結構接合於該內連線結構，其中，該內連線結構之該重分佈層係能致使該半導體晶粒之扇出連接；以及一封裝結構，係藉由第二複數個接合結構接合於該內連線結構，其中，該半導體晶粒係被置放於該封裝結構與該內連線結構間之一空間之中。
根據上述之實施例，該內連線結構更具有複數個 導電結構，以及該等導電結構係被一或多個介電層所圍繞。
根據上述之實施例，該一或多個介電層係由感光聚合物所製成。
根據上述之實施例，該內連線結構具有等於或小於30μm之一厚度。
根據上述之實施例，該內連線結構與以一成型層所覆蓋之該封裝結構的一總厚度係介於350μm至1050μm之間。
根據上述之實施例，在面對該內連線結構之一第二表面之該封裝結構之一第一表面與該第二表面之間的一距離係介於100μm至400μm之間。
根據上述之實施例，複數個連接元件係接合於位在來自於該半導體晶粒及該封裝結構之一相對表面上之該內連線結構。
根據上述之實施例，該半導體封裝更包括另一半導體晶粒，係鄰接於該半導體晶粒，其中，該另一半導體晶粒係接合於該內連線結構，並且係被置放於該封裝結構與該內連線結構間之一空間之中。
根據上述之實施例，該封裝結構具有兩個或多個半導體晶粒。
根據上述之實施例，該內連線結構更具有用於以該半導體晶粒形成一第一接合結構之一第一連接器以及用於以該封裝結構形成一第二接合結構之一第二連接器，以及該第一連接器之一第一寬度係小於該第二連接器之一第二寬度。
根據上述之實施例，該第一連接器及該第二連接 器皆具有一阻障層。
根據上述之實施例，該第一連接器及該第二連接器皆具有一導電層。
根據上述之實施例，該第一寬度係介於20μm至100μm之間。
根據上述之實施例，該第二寬度係介於100μm至400μm之間。
本發明之另一實施例提供一種形成一半導體封裝之方法，其包括：提供具有一黏著層之一載體；形成一內連線結構於該黏著層之上；置放一半導體晶粒於該內連線結構之一表面之上；置放一封裝結構於該內連線結構之該表面之上，其中，該半導體晶粒係被設置於該內連線結構與該封裝結構間之一空間之中；以及執行一再熱流以將該封裝結構接合於該內連線結構。
根據上述之實施例，該再熱流亦將該半導體晶粒接合於該內連線結構。
根據上述之實施例，形成一半導體封裝之方法更包括：在該半導體晶粒被置放於該內連線結構之該表面上之後以及在置放該封裝結構之前，執行另一再熱流。
根據上述之實施例，該內連線結構具有一重分佈層，以及該內連線結構之該重分佈層係能導致該半導體晶粒之扇出連接。
根據上述之實施例，該內連線結構更具有與該半導體晶粒接合之一第一接點以及與該封裝結構接合之一第二 接點，以及該第一接點係小於該第二接點。
為使本發明之上述目的、特徵和優點能更明顯易懂，下文特舉較佳實施例並配合所附圖式做詳細說明。
100‧‧‧封裝
110、110’‧‧‧封裝結構
111、112‧‧‧半導體晶粒
113、114‧‧‧導線
115‧‧‧基材
116、118、122、133、134、135‧‧‧接點
117‧‧‧內連線結構
119‧‧‧連接器
120、120’‧‧‧晶粒
123‧‧‧金屬墊
124、125、126‧‧‧接合結構
130、130’‧‧‧內連線結構
131‧‧‧介電層
132‧‧‧介電層、鈍化層
136‧‧‧金屬線
140‧‧‧連接元件
144‧‧‧底部填充
145‧‧‧模鑄層
201、301‧‧‧載體
202、302‧‧‧黏著層
203、209‧‧‧鈍化層
204、207、210、213‧‧‧開口
205‧‧‧阻障層
206、212‧‧‧光阻層
208、214‧‧‧導電層
211‧‧‧凸塊下冶金(UBM)層
215‧‧‧保護層
H1‧‧‧距離
H2、H4‧‧‧厚度
H3、H6‧‧‧總厚度
H5‧‧‧高度
第1A圖係顯示根據一些實施例之一封裝之剖面示意圖；第1B圖係顯示根據一些實施例之一封裝之一部分之剖面示意圖；第1C圖係顯示根據一些實施例之接合於一內連線結構之兩晶粒之剖面示意圖；第2A圖至第2G圖係顯示根據一些實施例之形成一內連線結構之一連續製程之剖面示意圖；以及第3A圖至第3H圖係顯示根據一些實施例之形成一封裝之一連續製程之剖面示意圖。
茲配合圖式說明本發明之較佳實施例。
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之一較佳實施例的詳細說明中，將可清楚的呈現。以下實施例中所提到的方向用語，例如：上、下、左、右、前或後等，僅是參考附加圖式的方向。因此，使用的方向用語是用來說明並非用來限制本發明。
第1A圖係顯示根據一些實施例之一封裝100之剖面示意圖。封裝100包括有一封裝結構110及一晶粒120。封裝結構110包括有半導體晶粒111及112。在一些實施例之中，半 導體晶粒111及112皆具有一半導體基材，如同被運用於一半導體積體電路製造之中，以及積體電路可以被成型於其中及/或其上。半導體基材係指具有半導體材料之任何構造，其包括大批的矽、一半導體晶圓、一絕緣體上覆矽(SOI)的基材或一矽鍺基材。具有第III族、第IV族及第V族元素之其他半導體材料亦可以被採用。半導體基材可以更包括有複數個隔離特徵(未顯示)，例如，淺溝渠隔離(STI)特徵或區域矽氧化(LOCOS)特徵。隔離特徵可以界定及隔離各種微電子元件。可以被成型於半導體基材中之各種微電子元件之範例包括有電晶體(例如，金屬氧化層半導體場效電晶體(MOSFET)、互補金屬氧化半導體(CMOS)電晶體、雙載子接合電晶體(BJT)、高電壓電晶體、高頻率電晶體、P通道及/或n通道場效電晶體(PFETs/NFETs)等)；電阻器；二極體；電容器；誘導器；保險絲；及其他適當的元件。各種製程是被執行去形成各種微電子元件，其包括沉積、蝕刻、植入、微影、回火及/或其他適當的製程。微電子元件是被內連接去形成積體電路裝置，例如，一邏輯裝置、記憶裝置(例如，SRAM)、RF裝置、輸入/輸出(I/O)裝置、系統晶片(SoC)裝置及其他適合形式之裝置。
半導體晶粒111及112是被設置於一基材115之 上，其具有位於一表面上之複數個接點116。封裝結構110之基材115具有內連線結構117，內連線結構117係將位於基材115之一表面上之接點116連接於位在基材115之一相反表面上之接點118，如第1A圖所示。根據一些實施例，半導體晶粒111及112是分別藉由導線113及114電性連接於接點116。半導體晶粒111 及112亦可以是藉由其他手段連接於接點116。在基材115中之內連線結構117可以包括有金屬線及中介窗。在一些實施例之中，內連線結構117之中介窗包括有穿基材中介窗(through substrate vias，TSVs)或穿基材孔洞(through substrate holes，TSHs)。位於基材115之相反表面上之接點118包括有金屬墊。 接點118亦可以包括有焊錫層(未顯示)，在與一內連線結構130接合之前。焊錫層係形成每一個連接器119之一部分。連接器119，例如，焊錫凸塊或焊錫球，是附著於接點118。在一些實施例之中，連接器119之寬度(或直徑)是介於大約100μm至大約400μm之間。連接器119與接點118係形成接合結構124。
如上所述，封裝100亦包括有晶粒120。晶粒120具 有接點122，其是被一或多個保護層(未顯示)所圍繞。在一些實施例之中，接點122包括有金屬墊123以及成型於金屬墊123上之凸塊。接點122之凸塊可以是焊錫球及/或可以包括有銅柱。 接點122之焊錫凸塊係形成位於晶粒120與內連線結構130間之接合結構125。在一些實施例之中，接合結構125之寬度(或直徑)是介於大約20μm至大約100μm之間。在一些實施例之中，連接器119是大於接點122。
在封裝結構110之一底表面與內連線結構130之一 上表面間之一距離是被標示為H1於第1A圖之中。在一些實施例之中，H1是介於大約100μm至大約400μm之間。第1A圖亦顯示了晶粒120之厚度是H2。H2是小於H1，其可允許晶粒120去利用位於封裝結構110與內連線結構130間之一空間。
如第1A圖所示，封裝結構110與晶粒120是被設置 於內連線結構130之上以及電性連接於內連線結構130。內連線結構130包括有一或多個介電層，例如，介電層131及132。介電層131及132可以是柔軟的以吸收涵蓋於形成封裝100中之接合製程的應力。用於每一個介電層131及132之材料可以是光可定義的焊料阻劑、一聚合物(例如，聚酰亞胺、PBO、BCB)或模鑄化合物。
內連線結構130具有與位在晶粒120上之接點122 接合之小接點133，以形成接合結構125。內連線結構130亦具有與封裝結構110之連接器119接合之大接點134，以形成接合結構124。在一些實施例之中，小接點133是小於大接點134。 再者，內連線結構130具有與連接元件140接合之接點135，其是被使用去使外部連接於一外部基材，例如，一印刷電路板(PCB)或另一封裝。連接元件140之一高度是被標示為H5於第1A圖之中。在一些實施例之中，H5是介於大約100μm至大約400μm之間。
在一些實施例之中，介電層131具有介於大約3μm 至大約25μm之一厚度。在一些實施例之中，鈍化層132具有介於大約3μm至大約15μm之一厚度。內連線結構130之一總厚度是被標示為H3於第1A圖之中。在一些實施例之中，H3是介於大約6μm至大約30μm。在一些實施例之中，H3是等於或小於大約30μm。在一些實施例之中，H3是等於或小於大約25μm。
在第1A圖之實施例之中，接點135是連接於金屬線 136，其可提供電性連接於接合結構124、125與126之間。金屬線136作用如同一重分佈層(RDL)以及能致使晶粒之扇出連 接，其可允許超過晶粒120之邊緣(或邊界)之電性連接。第1A圖之實施例只包括有一金屬層。然而，一重分佈層(RDL)能包括有複數個金屬層，其能被複數個中介窗所內連接。在一些實施例之中，接點133及接點134包括有一凸塊下冶金(UBM)層211，其可做為一擴散阻障層於接點133、134及135與一電鍍致能層之間。額外的詳細敘述是被提供如下。
在一些實施例之中，接點133之寬度是介於大約 20μm至大約100μm之間。在一些實施例之中，接點134之寬度是介於大約100μm至大約400μm之間。在第1A圖之實施例之中，接點135包括有一導電層208及一阻障層205。這些層與成型方法之額外的詳細敘述是被提供如下。
在第1A圖之實施例之中，封裝結構110是被一模鑄 層(或一模鑄化合物)145所覆蓋。在一些實施例之中，模鑄層145包括有環氧化物、二氧化矽填充物及/或其他形式的聚合物。 在第1A圖之實施例之中，模鑄層145亦是填充位在封裝結構110與內連線結構130間之一空間。在一些實施例之中，模鑄層145亦做為一底部填充(UF)，並且填充位在晶粒120與內連線結構130間之一空間。在此種情形之下，模鑄層145是一底部填充成型(MUF)化合物，並且是被應用於內連線結構130之一表面上，在晶粒120與封裝結構110接合於內連線結構130之後。在一些實施例之中，一底部填充144是被應用於晶粒120接合於內連線結構130之後，如第1B圖所示。在底部填充144被應用之後，封裝結構110然後是被置放於內連線結構130之上以及接合於內連線結構130。在內連線結構130上之封裝結構110之一厚度是 被標示為H4於第1A圖之中。在一些實施例之中，H4是介於大約350μm至大約1000μm之間。封裝結構110與內連線結構130之一總厚度是被標示為H6於第1A圖之中。在一些實施例之中，H6是介於大約350μm至大約1050μm之間。H6是低於其他的封裝結構，例如位於大約1000μm至大約1050μm間之範圍內。因此，封裝100具有低z-軸向形成因素(或封裝100之總厚度)。
在第1A圖之實施例之中，晶粒120與封裝結構110 是接合於內連線結構130。在一些實施例之中，有超過一個晶粒位於封裝結構110之下。在第1C圖之實施例之中，兩個晶粒120及120’是接合於一內連線結構130’。在第1C圖之實施例之中，一封裝結構110’是被置於晶粒120及120’之上。
第2A圖至第2G圖係顯示根據一些實施例之形成內 連線結構130之一連續製程之剖面示意圖。在第2A圖之中，一黏著層202是被成型於一載體201之上。在一些實施例之中，載體201是由玻璃所製成。然而，其他的材料也可以被使用於載體201。舉例來說，黏著層202是被設置於載體201之上。黏著層202可以是由一黏膠所構成或可以是由一金屬薄片所構成之一層壓層。在黏著層202是被成型之後，一鈍化層203是被成型及圖刻，以形成位於黏著層202上之接觸開口204，如第2B圖所示。在一些實施例之中，鈍化層203是一介電材料。在一些實施例之中，鈍化層203是一聚合物。在一些實施例之中，鈍化層203是一感光聚合物以及能不需一光阻層而被圖刻。
在接觸開口204被形成之後，一阻障層205是被成 型去覆蓋位於載體201上之鈍化層203的暴露表面，如第2C圖所 示。阻障層205是一導電層以及可防止被沉積去填充開口204之銅的擴散。在一些實施例之中，阻障層205是由Ti所製成。在一些實施例之中，一銅種晶層(未顯示)是被成型於阻障層205之上。在一些實施例之中，阻障層205及/或銅種晶層是藉由物理氣相沉積(PVD)而被沉積。在阻障層205被成型之後，一光阻層206然後是被成型於阻障層205之上。在第2C圖之中，一光阻層206是被成型於阻障層205之上。在一些實施例之中，光阻層206是藉由一旋塗製程(濕製程)所成型。在一些實施例之中，光阻層206是一乾燥光阻層，其是黏著於阻障層205之表面，其可以被一銅種晶層(未顯示)所覆蓋。光阻層206然後是被圖刻去界定用於形成內連線之開口207，如第2C圖所示。
在第2D圖之中，一導電層208是被成型於開口207 及204之中。在一些實施例之中，導電層208是由銅或一銅合金所製成。在一些實施例之中，導電層208包括有金屬，例如，鋁、鎳、金、銀、鉑、上述金屬之合金或結合物。在一些實施例之中，導電層208是藉由電鍍所成型。過多的導電層208或太厚之導電層208的區域是藉由一移除製程而被移除掉，例如，一化學機械研磨(CMP)。光阻層206然後是被移除掉。舉例來說，倘若光阻層206是一乾燥光阻薄膜，則其能藉由剝離而被移除掉。在一些實施例之中，光阻層206是藉由一蝕刻製程而被移除掉。在光阻層206被移除掉之後，由光阻層206所覆蓋之阻障層205的部分是被暴露。阻障層205的暴露部分然後是被移除掉，如第2D圖所示。在一些實施例之中，阻障層205的暴露部分是藉由一蝕刻製程而被移除掉。
在第2E圖之中，另一個鈍化層209是被沉積及圖刻 於鈍化層203及導電層208之上。在一些實施例之中，鈍化層209是一介電材料。在一些實施例之中，鈍化層209是一聚合物。 在一些實施例之中，鈍化層209是一感光聚合物以及能不需一光阻層而被圖刻。圖刻製程會形成複數個開口210。在一些實施例之中，在開口210被成型之後，一凸塊下冶金(UBM)層211是被沉積於鈍化層209之表面上。在一些實施例之中，凸塊下冶金(UBM)層211包括有一擴散阻障層及一種晶層。在一些實施例之中，擴散阻障層亦可以做為一黏著層(或一黏膠層)。擴散阻障層可以是由Ta、TaN、Ti、TiN或其結合物所製成。種晶層是由能致使一導電層之後續沉積產生之一材料所製成。在一些實施例之中，凸塊下冶金(UBM)層211包括有由Ti所構成之一擴散阻障層及由Cu所構成之一種晶層。在一些實施例之中，由Ti所構成之擴散阻障層以及由Cu所構成之種晶層是藉由物理氣相沉積(PVD)(或濺鍍)方法而被沉積。
在一些實施例之中，在凸塊下冶金(UBM)層211被 成型之後，一光阻層212是被成型於凸塊下冶金(UBM)層211之上，如第2F圖所示。光阻層212可以是一乾燥或濕光阻。光阻層212是被圖刻去界定實質上校直於開口210之開口213。在圖刻製程完成後，一導電層214是被成型去填充開口210及213。 在一些實施例之中，導電層214包括有銅、鋁、銅合金或其他可移動之導電材料。在一些實施例之中，導電層214是由焊錫所製成。
在一些實施例之中，導電層214包括有兩個次層。 一個次層是一金屬層，其是由銅、鋁、銅合金或其他具有低電阻率之導電材料所製成。覆蓋前述次層之另一個次層是由焊錫所製成。在一些實施例之中，一保護層215是被成型去覆蓋導電層214，如第2G圖所示。保護層215在一些實施例之中是選擇性的。之後，光阻層212是被移除掉，以及藉由光阻層之移除而被暴露之凸塊下冶金(UBM)層211亦是被移除掉。在一些實施例之中，導電層214是藉由電鍍而被沉積。保護層215可保護導電層214之一表面免於氧化。在一些實施例之中，保護層215是由Ni或其中一種有機表面保護(OSP)材料所製成。在一些實施例之中，凸塊下冶金(UBM)層211、導電層214及選擇性的保護層215會形成接點133及134。顯示於第2G圖中之接點即為接點133或134。
在一些實施例之中，凸塊下冶金(UBM)層211及導 電層214係形成複數個凸塊結構。在一些實施例之中，凸塊結構是銅柱。形成銅柱之材料、結構及成型方法之細節是被描述於2010年7月29日申請之美國專利申請第12/846,353之”Mechanisms for Forming Copper Pillar Bumps”之中。在第2G圖之中，成型於黏著層202上之結構是內連線結構130。
第3A圖至第3H圖係顯示根據一些實施例之形成一 封裝100之一連續製程之剖面示意圖。在第3A圖之實施例之中，內連線結構130是被成型於一黏著層302之上，其是位於一載體301之上。在一些實施例之中，內連線結構130之成型製程及特徵已被如上敘述於第2A圖至第2G圖之中。在一些實施例之中，載體301是類似於載體201，以及黏著層302是類似於黏 著層202。在一些實施例之中，在內連線結構130被成型之後，晶粒120是被置於內連線結構130之上，如第3B圖所示。如第1A圖所示，位在晶粒120上之接點122是被直接置於內連線結構130之接點133之上，並且是與接點133接觸。在一些實施例之中，一再熱流製程是被執行去將接點122接合於接點133。在一些實施例之中，在接點122及133接合在一起之後，一底部填充(UF)是被應用去填充位於晶粒120與內連線結構130之表面間的空間之中。第1B圖係顯示一底部填充144填充位於晶粒120與內連線結構130之表面間的空間。如上所述，再熱流以及底部填充之應用不是被執行於一些實施例之中，如第3B圖所示。
在晶粒120被置於內連線結構130之上後，封裝結 構110是被置於內連線結構130之上，如第3C圖所示。在封裝結構110上之連接器119是被直接置於內連線結構130之接點134之上，並且是與接點134接觸，如第1A圖所示。如上所述，因為封裝結構110之連接器119是大於位於晶粒120上之接點122，故接點134是大於接點133。
之後，一再熱流製程是被執行去將接點134接合於連接器119，並且亦將接點133接合於接點122，如第3D圖所示。再熱流製程是將晶粒120與封裝結構110接合於內連線結構130。如上所述，一再熱流能已被執行，在晶粒120被置於內連線結構130之上後。在此種情況之下，如第3D圖所示之再熱流只會將接點134接合於連接器119。
在再熱流製程完成後，模鑄層145是被應用去覆蓋封裝結構110與晶粒120，如第3E圖所示。如上所述，模鑄層145 亦是做為一底部填充(UF)，並且填充位於晶粒120與內連線結構130間之空間之中。在一些實施例之中，模鑄層145亦底部填充晶粒120。
在第3F圖之中，載體301及黏著層302是被移除 掉。如第2C圖所示，一阻障層205是被成型成複數個線開口204。阻障層205(例如為一Ti層)是被移除掉以暴露導電層208，其在一些實施例之中是由銅所製成。
在第3G圖之中，連接元件140(例如，焊錫球)是被 固定於內連線結構130之一表面之上，以接合接點135。此接合製程亦涵蓋了一再熱流。
在連接元件140接合於內連線結構130之後，顯示 於第3G圖中之封裝結構是被固定於一膠布，其是被固定於一載體(未顯示)。具有第3G圖之被固定封裝結構之載體然後會經歷一切割製程，以將封裝100分割成複數個個別的封裝。在切割製程之後，膠布與載體是被分離於每一個封裝100。第3H圖係顯示在切割製程後之一封裝100。
成型於晶粒120、封裝結構110、連接元件140與內 連線結構130之間的接合結構僅是一些實施例。具有不同形狀與材料層之其他形式的接合結構亦是可行的。
雖然本發明已以較佳實施例揭露於上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧封裝
110‧‧‧封裝結構
111、112‧‧‧半導體晶粒
113、114‧‧‧導線
115‧‧‧基材
116、118、122、133、134、135‧‧‧接點
117‧‧‧內連線結構
119‧‧‧連接器
120‧‧‧晶粒
123‧‧‧金屬墊
124、125、126‧‧‧接合結構
130‧‧‧內連線結構
131‧‧‧介電層
132‧‧‧介電層、鈍化層
140‧‧‧連接元件
145‧‧‧模鑄層
205‧‧‧阻障層
208‧‧‧導電層
H1‧‧‧距離
H2、H4‧‧‧厚度
H3、H6‧‧‧總厚度
H5‧‧‧高度

Claims (10)

  1. 一種半導體封裝，包括：一內連線結構，具有一重分佈層，其中該內連線結構具有等於或小於30μm之一厚度；一半導體晶粒，係藉由第一複數個接合結構接合於該內連線結構，其中，該內連線結構之該重分佈層係能致使該半導體晶粒之扇出連接；以及一封裝結構，係藉由第二複數個接合結構接合於該內連線結構，其中，該半導體晶粒係被置放於該封裝結構與該內連線結構間之一空間之中。
  2. 如申請專利範圍第1項所述之半導體封裝，其中，該內連線結構更具有複數個導電結構，該等導電結構係被一或多個介電層所圍繞，以及該一或多個介電層係由感光聚合物所製成。
  3. 如申請專利範圍第1項所述之半導體封裝，其中，該內連線結構與以一成型層所覆蓋之該封裝結構的一總厚度係介於350μm至1050μm之間，以及在面對該內連線結構之一第二表面之該封裝結構之一第一表面與該第二表面之間的一距離係介於100μm至400μm之間。
  4. 如申請專利範圍第1項所述之半導體封裝，其中，複數個連接元件係接合於位在來自於該半導體晶粒及該封裝結構之一相對表面上之該內連線結構。
  5. 如申請專利範圍第1項所述之半導體封裝，更包括另一半導體晶粒，係鄰接於該半導體晶粒，其中，該另一半導體晶 粒係接合於該內連線結構，並且係被置放於該封裝結構與該內連線結構間之一空間之中。
  6. 如申請專利範圍第1項所述之半導體封裝，其中，該內連線結構更具有用於以該半導體晶粒形成一第一接合結構之一第一連接器以及用於以該封裝結構形成一第二接合結構之一第二連接器，以及該第一連接器之一第一寬度係小於該第二連接器之一第二寬度。
  7. 如申請專利範圍第6項所述之半導體封裝，其中，該第一連接器及該第二連接器皆具有一阻障層或一導電層。
  8. 如申請專利範圍第6項所述之半導體封裝，其中，該第一寬度係介於20μm至100μm之間，以及該第二寬度係介於100μm至400μm之間。
  9. 一種形成一半導體封裝之方法，包括：提供具有一黏著層之一載體；形成一內連線結構於該黏著層之上；置放一半導體晶粒於該內連線結構之一表面之上；置放一封裝結構於該內連線結構之該表面之上，其中，該半導體晶粒係被設置於該內連線結構與該封裝結構間之一空間之中；以及執行一再熱流以將該封裝結構接合於該內連線結構，其中該內連線結構具有等於或小於30μm之一厚度。
  10. 如申請專利範圍第9項所述之形成一半導體封裝之方法，其中，該再熱流亦將該半導體晶粒接合於該內連線結構，以及該形成一半導體封裝之方法更包括： 在該半導體晶粒被置放於該內連線結構之該表面上之後以及在置放該封裝結構之前，執行另一再熱流。
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