TWI545184B - 混合的研磨性鎢之化學機械拋光(cmp)組合物 - Google Patents

混合的研磨性鎢之化學機械拋光(cmp)組合物 Download PDF

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Publication number
TWI545184B
TWI545184B TW104109483A TW104109483A TWI545184B TW I545184 B TWI545184 B TW I545184B TW 104109483 A TW104109483 A TW 104109483A TW 104109483 A TW104109483 A TW 104109483A TW I545184 B TWI545184 B TW I545184B
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TW
Taiwan
Prior art keywords
acid
cerium oxide
colloidal
abrasive
polishing
Prior art date
Application number
TW104109483A
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English (en)
Chinese (zh)
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TW201602324A (zh
Inventor
威廉 沃德
葛倫 懷騰納
史帝芬 葛倫拜
傑佛瑞 戴薩
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卡博特微電子公司
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Publication of TW201602324A publication Critical patent/TW201602324A/zh
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/745Iron
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/04Aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • H10P52/00
    • H10P52/402
    • H10P52/403

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104109483A 2014-03-24 2015-03-24 混合的研磨性鎢之化學機械拋光(cmp)組合物 TWI545184B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/222,736 US9303190B2 (en) 2014-03-24 2014-03-24 Mixed abrasive tungsten CMP composition

Publications (2)

Publication Number Publication Date
TW201602324A TW201602324A (zh) 2016-01-16
TWI545184B true TWI545184B (zh) 2016-08-11

Family

ID=54141490

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109483A TWI545184B (zh) 2014-03-24 2015-03-24 混合的研磨性鎢之化學機械拋光(cmp)組合物

Country Status (7)

Country Link
US (1) US9303190B2 (enExample)
EP (1) EP3123498B1 (enExample)
JP (1) JP6633540B2 (enExample)
KR (1) KR102390111B1 (enExample)
CN (1) CN106415796B (enExample)
TW (1) TWI545184B (enExample)
WO (1) WO2015148295A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106661429B (zh) * 2014-08-26 2019-07-05 凯斯科技股份有限公司 抛光浆料组合物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10077381B2 (en) 2015-07-20 2018-09-18 Kctech Co., Ltd. Polishing slurry composition
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
JP6955014B2 (ja) * 2016-09-28 2021-10-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨
WO2018058397A1 (en) * 2016-09-29 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10633558B2 (en) 2016-09-29 2020-04-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP6936316B2 (ja) * 2016-09-29 2021-09-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド タングステンのための化学機械研磨法
US20180094166A1 (en) * 2016-09-30 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing composition comprising positive and negative silica particles
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
US9783702B1 (en) 2016-10-19 2017-10-10 Rohm And Haas Electronic Materials Cmp Holdings Inc. Aqueous compositions of low abrasive silica particles
KR102798940B1 (ko) * 2016-12-05 2025-04-25 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
SG11201909469WA (en) * 2017-04-14 2019-11-28 Cabot Microelectronics Corp Chemical-mechanical processing slurry and methods
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US20190194493A1 (en) * 2017-08-03 2019-06-27 Jsr Corporation Composition for semiconductor treatment and treatment method
US10600655B2 (en) 2017-08-10 2020-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US10316218B2 (en) * 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US12473457B2 (en) * 2017-09-15 2025-11-18 Cmc Materials Llc Composition for tungsten CMP
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
CN108789163A (zh) * 2018-05-30 2018-11-13 郑州合晶硅材料有限公司 一种硅片背面抛光用装置及抛光方法
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
US10968366B2 (en) * 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
CN111378375B (zh) * 2018-12-28 2022-05-13 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
WO2020179555A1 (ja) * 2019-03-06 2020-09-10 扶桑化学工業株式会社 コロイダルシリカ及びその製造方法
KR102258900B1 (ko) * 2019-04-22 2021-06-02 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
US11597854B2 (en) * 2019-07-16 2023-03-07 Cmc Materials, Inc. Method to increase barrier film removal rate in bulk tungsten slurry
JP7775213B2 (ja) 2020-03-31 2025-11-25 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 新規の研磨剤を含むcmp組成物
KR102851125B1 (ko) * 2021-03-31 2025-08-28 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20240145790A (ko) 2023-03-28 2024-10-07 고등기술연구원연구조합 실리카 나노 분말 및 웨이퍼의 화학기계 연마용 슬러리 제조 방법

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3195569B2 (ja) * 1997-08-11 2001-08-06 守 磯 繭型コロイダルシリカの製造方法
US5942015A (en) 1997-09-16 1999-08-24 3M Innovative Properties Company Abrasive slurries and abrasive articles comprising multiple abrasive particle grades
JP3810588B2 (ja) 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP3523107B2 (ja) 1999-03-17 2004-04-26 株式会社東芝 Cmp用スラリおよびcmp法
HK1046151A1 (zh) 1999-07-07 2002-12-27 卡伯特微电子公司 含硅烷改性研磨颗粒的化学机械抛光(cmp)组合物
US6334880B1 (en) 1999-12-07 2002-01-01 Silbond Corporation Abrasive media and aqueous slurries for chemical mechanical polishing and planarization
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP4435391B2 (ja) 2000-08-04 2010-03-17 扶桑化学工業株式会社 コロイド状シリカスラリー
DE10065027A1 (de) 2000-12-23 2002-07-04 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
TW591089B (en) 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US20030092271A1 (en) 2001-09-13 2003-05-15 Nyacol Nano Technologies, Inc. Shallow trench isolation polishing using mixed abrasive slurries
US20030211747A1 (en) 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
DE10164262A1 (de) 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6682575B2 (en) 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
US7056449B2 (en) 2002-08-14 2006-06-06 Rohm And Haas Company Aqueous silica dispersion
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
US6896591B2 (en) 2003-02-11 2005-05-24 Cabot Microelectronics Corporation Mixed-abrasive polishing composition and method for using the same
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
KR20060015723A (ko) 2003-05-09 2006-02-20 산요가세이고교 가부시키가이샤 씨엠피 프로세스용 연마액 및 연마방법
US8309615B2 (en) 2003-08-04 2012-11-13 Rohm And Haas Company Aqueous silica dispersion
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
KR20050073044A (ko) 2004-01-08 2005-07-13 매그나칩 반도체 유한회사 화학적기계연마 방법
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US7056192B2 (en) 2004-09-14 2006-06-06 International Business Machines Corporation Ceria-based polish processes, and ceria-based slurries
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20060124592A1 (en) 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
KR101332302B1 (ko) 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
JP2007095946A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 金属用研磨液及び研磨方法
US20070075042A1 (en) 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR20070088245A (ko) 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Cmp 슬러리용 보조제
US8163049B2 (en) 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
US8961677B2 (en) 2006-04-26 2015-02-24 Silbond Corporation Suspension of nanoparticles and method for making the same
US7585340B2 (en) 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
US10087082B2 (en) 2006-06-06 2018-10-02 Florida State University Research Foundation, Inc. Stabilized silica colloid
JP4836731B2 (ja) 2006-07-18 2011-12-14 旭硝子株式会社 磁気ディスク用ガラス基板の製造方法
US8053479B2 (en) 2006-07-31 2011-11-08 Fuso Chemical Co. Ltd. Silica sol and method for producing the same
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
WO2008123373A1 (ja) 2007-03-27 2008-10-16 Fuso Chemical Co., Ltd. コロイダルシリカ及びその製造方法
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
US7915071B2 (en) 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
WO2009042072A2 (en) 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
WO2009042073A2 (en) 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5441345B2 (ja) 2008-03-27 2014-03-12 富士フイルム株式会社 研磨液、及び研磨方法
AU2009236192B2 (en) 2008-04-18 2011-09-22 Saint-Gobain Abrasifs Hydrophilic and hydrophobic silane surface modification of abrasive grains
CN102159662B (zh) 2008-09-19 2014-05-21 卡伯特微电子公司 用于低k电介质的阻挡物浆料
JP5312887B2 (ja) * 2008-09-24 2013-10-09 富士フイルム株式会社 研磨液
US8529787B2 (en) 2008-09-26 2013-09-10 Fuso Chemical Co., Ltd. Colloidal silica containing silica secondary particles having bent structure and/or branched structure, and method for producing same
US8366959B2 (en) 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
EP2389417B1 (en) 2009-01-20 2017-03-15 Cabot Corporation Compositons comprising silane modified metal oxides
US8119529B2 (en) 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
SG176255A1 (en) 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Cmp研磨液及び研磨方法
WO2012032467A1 (en) * 2010-09-08 2012-03-15 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
KR101243331B1 (ko) * 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8366059B2 (en) 2011-01-06 2013-02-05 GM Global Technology Operations LLC Position controlled cable guide clip
KR101335946B1 (ko) * 2011-08-16 2013-12-04 유비머트리얼즈주식회사 텅스텐 연마용 cmp 슬러리 조성물
US8518135B1 (en) 2012-08-27 2013-08-27 Cabot Microelectronics Corporation Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks

Also Published As

Publication number Publication date
CN106415796A (zh) 2017-02-15
KR102390111B1 (ko) 2022-04-25
US9303190B2 (en) 2016-04-05
CN106415796B (zh) 2019-06-25
WO2015148295A1 (en) 2015-10-01
JP2017516296A (ja) 2017-06-15
EP3123498A1 (en) 2017-02-01
TW201602324A (zh) 2016-01-16
KR20160135774A (ko) 2016-11-28
EP3123498B1 (en) 2019-10-02
US20150267083A1 (en) 2015-09-24
EP3123498A4 (en) 2017-12-27
JP6633540B2 (ja) 2020-01-22

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