TWI534912B - 剝離裝置及剝離方法 - Google Patents

剝離裝置及剝離方法 Download PDF

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Publication number
TWI534912B
TWI534912B TW102124896A TW102124896A TWI534912B TW I534912 B TWI534912 B TW I534912B TW 102124896 A TW102124896 A TW 102124896A TW 102124896 A TW102124896 A TW 102124896A TW I534912 B TWI534912 B TW I534912B
Authority
TW
Taiwan
Prior art keywords
substrate
mixed fluid
metal layer
resist layer
sprayed
Prior art date
Application number
TW102124896A
Other languages
English (en)
Chinese (zh)
Other versions
TW201413830A (zh
Inventor
朝香篤泰
板倉純一
木下敬俊
Original Assignee
東邦化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東邦化成股份有限公司 filed Critical 東邦化成股份有限公司
Publication of TW201413830A publication Critical patent/TW201413830A/zh
Application granted granted Critical
Publication of TWI534912B publication Critical patent/TWI534912B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW102124896A 2012-07-12 2013-07-11 剝離裝置及剝離方法 TWI534912B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012156470A JP6347572B2 (ja) 2012-07-12 2012-07-12 リフトオフ装置およびリフトオフ方法

Publications (2)

Publication Number Publication Date
TW201413830A TW201413830A (zh) 2014-04-01
TWI534912B true TWI534912B (zh) 2016-05-21

Family

ID=49916041

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102124896A TWI534912B (zh) 2012-07-12 2013-07-11 剝離裝置及剝離方法

Country Status (3)

Country Link
JP (1) JP6347572B2 (fr)
TW (1) TWI534912B (fr)
WO (1) WO2014010589A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI595332B (zh) 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62239536A (ja) * 1986-04-11 1987-10-20 Toshiba Corp レジスト剥離処理装置
JPH01264227A (ja) * 1988-04-14 1989-10-20 Mitsubishi Electric Corp レジスト除去方法
JP3800291B2 (ja) * 1999-08-30 2006-07-26 大日本スクリーン製造株式会社 塗布方法及び塗布装置
JP2005045156A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Ind Co Ltd リフトオフ方法
JP4502854B2 (ja) * 2005-03-22 2010-07-14 株式会社高田工業所 基板の処理装置及び処理方法
JP4523498B2 (ja) * 2005-06-27 2010-08-11 東京エレクトロン株式会社 現像処理装置及び現像処理方法
JP2009069190A (ja) * 2007-09-10 2009-04-02 Fujifilm Corp 金属パターン材料の製造方法及び金属パターン材料
JP2009295734A (ja) * 2008-06-04 2009-12-17 Sharp Corp 半導体装置の製造装置及びその製造方法
JP2011061034A (ja) * 2009-09-10 2011-03-24 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2011192779A (ja) * 2010-03-15 2011-09-29 Kurita Water Ind Ltd 電子材料の洗浄方法および洗浄システム
JP2011198933A (ja) * 2010-03-18 2011-10-06 Tokyo Electron Ltd レジスト除去装置及びレジスト除去方法
JP5623104B2 (ja) * 2010-03-18 2014-11-12 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
JP2011205015A (ja) * 2010-03-26 2011-10-13 Kurita Water Ind Ltd 電子材料の洗浄方法
JP2012015180A (ja) * 2010-06-29 2012-01-19 Tokyo Electron Ltd 二流体ノズル、基板処理装置、液体の液滴の生成方法、および基板処理方法

Also Published As

Publication number Publication date
TW201413830A (zh) 2014-04-01
JP6347572B2 (ja) 2018-06-27
WO2014010589A1 (fr) 2014-01-16
JP2014022389A (ja) 2014-02-03

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