TWI532559B - 用於易碎材料的雷射單一化的改善的方法及裝置 - Google Patents
用於易碎材料的雷射單一化的改善的方法及裝置 Download PDFInfo
- Publication number
- TWI532559B TWI532559B TW100111495A TW100111495A TWI532559B TW I532559 B TWI532559 B TW I532559B TW 100111495 A TW100111495 A TW 100111495A TW 100111495 A TW100111495 A TW 100111495A TW I532559 B TWI532559 B TW I532559B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- parameter comprises
- laser parameter
- pulse
- workpiece
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
- B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/753,367 US8383984B2 (en) | 2010-04-02 | 2010-04-02 | Method and apparatus for laser singulation of brittle materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201201945A TW201201945A (en) | 2012-01-16 |
| TWI532559B true TWI532559B (zh) | 2016-05-11 |
Family
ID=44708399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100111495A TWI532559B (zh) | 2010-04-02 | 2011-04-01 | 用於易碎材料的雷射單一化的改善的方法及裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8383984B2 (https=) |
| EP (1) | EP2553717B1 (https=) |
| JP (1) | JP5823490B2 (https=) |
| KR (1) | KR101754186B1 (https=) |
| CN (1) | CN102844844B (https=) |
| TW (1) | TWI532559B (https=) |
| WO (1) | WO2011123673A2 (https=) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9346130B2 (en) | 2008-12-17 | 2016-05-24 | Electro Scientific Industries, Inc. | Method for laser processing glass with a chamfered edge |
| US9669613B2 (en) * | 2010-12-07 | 2017-06-06 | Ipg Photonics Corporation | Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated |
| US20110287607A1 (en) * | 2010-04-02 | 2011-11-24 | Electro Scientific Industries, Inc. | Method and apparatus for improved wafer singulation |
| ES2398787B1 (es) * | 2010-12-16 | 2014-02-18 | BSH Electrodomésticos España S.A. | Procedimiento para fabricar una placa de campo de cocción para un campo de cocción |
| US8976340B2 (en) * | 2011-04-15 | 2015-03-10 | Advanced Scientific Concepts, Inc. | Ladar sensor for landing, docking and approach |
| US8950519B2 (en) | 2011-05-26 | 2015-02-10 | Us Synthetic Corporation | Polycrystalline diamond compacts with partitioned substrate, polycrystalline diamond table, or both |
| US9297411B2 (en) | 2011-05-26 | 2016-03-29 | Us Synthetic Corporation | Bearing assemblies, apparatuses, and motor assemblies using the same |
| US9062505B2 (en) | 2011-06-22 | 2015-06-23 | Us Synthetic Corporation | Method for laser cutting polycrystalline diamond structures |
| US8863864B1 (en) | 2011-05-26 | 2014-10-21 | Us Synthetic Corporation | Liquid-metal-embrittlement resistant superabrasive compact, and related drill bits and methods |
| DE102011054891B4 (de) | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
| US9828278B2 (en) | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Method and apparatus for separation of strengthened glass and articles produced thereby |
| US10357850B2 (en) | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
| US9828277B2 (en) * | 2012-02-28 | 2017-11-28 | Electro Scientific Industries, Inc. | Methods for separation of strengthened glass |
| JP2015516352A (ja) | 2012-02-29 | 2015-06-11 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 強化ガラスを加工するための方法及び装置並びにこれにより生成された製品 |
| TWI483802B (zh) * | 2012-12-14 | 2015-05-11 | 財團法人工業技術研究院 | 雷射加工裝置及其方法 |
| WO2014130830A1 (en) * | 2013-02-23 | 2014-08-28 | Raydiance, Inc. | Shaping of brittle materials with controlled surface and bulk properties |
| DE102013005136A1 (de) * | 2013-03-26 | 2014-10-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zurn Abtragen von sprödhartem Material mittels Laserstrahlung |
| JP6162018B2 (ja) * | 2013-10-15 | 2017-07-12 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6696897B2 (ja) * | 2013-10-29 | 2020-05-20 | ルミレッズ ホールディング ベーフェー | 発光デバイスのウエハを分離する方法 |
| US9653638B2 (en) | 2013-12-20 | 2017-05-16 | Sunpower Corporation | Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region |
| WO2015168276A1 (en) * | 2014-04-29 | 2015-11-05 | Ipg Photonics Corporation | High speed laser cutting of amorphous metals |
| US20160184926A1 (en) * | 2014-12-30 | 2016-06-30 | Suss Microtec Photonic Systems Inc. | Laser ablation system including variable energy beam to minimize etch-stop material damage |
| JP6649705B2 (ja) * | 2015-06-22 | 2020-02-19 | 株式会社ディスコ | レーザー加工方法 |
| CN107850554B (zh) | 2015-08-26 | 2021-09-07 | 伊雷克托科学工业股份有限公司 | 相对于气流的镭射扫描定序及方向 |
| CN108289764B (zh) * | 2015-12-18 | 2021-10-22 | 金伯利-克拉克环球有限公司 | 激光切割纤网结构的方法 |
| TWI724282B (zh) * | 2018-03-02 | 2021-04-11 | 寬輔科技股份有限公司 | 測試晶粒的雷射切割方法 |
| JP7072993B2 (ja) * | 2018-07-31 | 2022-05-23 | 株式会社ディスコ | チップ製造方法 |
| TWI678342B (zh) * | 2018-11-09 | 2019-12-01 | 財團法人工業技術研究院 | 形成導角的切割方法 |
| KR102158832B1 (ko) * | 2018-11-20 | 2020-09-22 | 한화정밀기계 주식회사 | 웨이퍼 절단 방법 및 절단 장치 |
| PL3914418T3 (pl) * | 2019-02-25 | 2022-06-13 | Wsoptics Technologies Gmbh | Sposób obróbki strumieniowo-ściernej przedmiotu obrabianego w kształcie płyty lub rury |
| CN115332064B (zh) | 2020-02-21 | 2025-01-21 | 新唐科技日本株式会社 | 单片化方法 |
| US11854888B2 (en) * | 2020-06-22 | 2023-12-26 | Applied Materials, Inc. | Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach |
| WO2022203983A1 (en) * | 2021-03-24 | 2022-09-29 | Applied Materials, Inc. | Methods to dice optical devices with optimization of laser pulse spatial distribution |
| CN113799277B (zh) * | 2021-08-10 | 2024-04-19 | 威科赛乐微电子股份有限公司 | 一种晶体多线切割方法 |
| JP7796562B2 (ja) * | 2022-03-15 | 2026-01-09 | 株式会社ディスコ | ウエーハの加工方法 |
| US12564068B2 (en) * | 2022-10-06 | 2026-02-24 | Thinsic Inc. | Carbon assisted semiconductor dicing and method |
| DE102023002414A1 (de) * | 2023-06-14 | 2024-12-19 | Azur Space Solar Power Gmbh | Verfahren zur Herstellung eines Grabens bei einer III-V Mehrfachsolarzelle |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2720669B2 (ja) | 1991-11-11 | 1998-03-04 | 株式会社大林組 | レーザービームによる厚板の溶断方法 |
| DE4316012C2 (de) | 1993-05-13 | 1998-09-24 | Gehring Gmbh & Co Maschf | Verfahren zur Feinbearbeitung von Werkstück-Oberflächen |
| JP3534807B2 (ja) | 1994-02-28 | 2004-06-07 | 三菱電機株式会社 | レーザ切断方法 |
| US5747769A (en) * | 1995-11-13 | 1998-05-05 | General Electric Company | Method of laser forming a slot |
| US6271102B1 (en) | 1998-02-27 | 2001-08-07 | International Business Machines Corporation | Method and system for dicing wafers, and semiconductor structures incorporating the products thereof |
| US6987786B2 (en) | 1998-07-02 | 2006-01-17 | Gsi Group Corporation | Controlling laser polarization |
| JP3518405B2 (ja) | 1999-04-02 | 2004-04-12 | 三菱電機株式会社 | レーザ加工方法及びレーザ加工装置 |
| US6255621B1 (en) | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| JP4659300B2 (ja) | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| KR20020047479A (ko) | 2000-12-13 | 2002-06-22 | 김경섭 | 비금속재료의 레이저 절단 방법 |
| JP2004515365A (ja) | 2000-12-15 | 2004-05-27 | エグシル テクノロジー リミテッド | 半導体材料のレーザー加工 |
| ATE282526T1 (de) | 2001-05-25 | 2004-12-15 | Stork Prints Austria Gmbh | Verfahren und vorrichtung zur herstellung einer druckform |
| SG108262A1 (en) | 2001-07-06 | 2005-01-28 | Inst Data Storage | Method and apparatus for cutting a multi-layer substrate by dual laser irradiation |
| GB2399311B (en) | 2003-03-04 | 2005-06-15 | Xsil Technology Ltd | Laser machining using an active assist gas |
| DK1656026T3 (da) * | 2003-08-22 | 2014-07-14 | Dupont Nutrition Biosci Aps | Sammensætning, der omfatter et bakteriocin og et ekstrakt fra en plante fra læbeblomstfamilien |
| US7173212B1 (en) | 2004-02-13 | 2007-02-06 | Semak Vladimir V | Method and apparatus for laser cutting and drilling of semiconductor materials and glass |
| US7129114B2 (en) | 2004-03-10 | 2006-10-31 | Micron Technology, Inc. | Methods relating to singulating semiconductor wafers and wafer scale assemblies |
| US7633034B2 (en) * | 2004-06-18 | 2009-12-15 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure |
| US8148211B2 (en) * | 2004-06-18 | 2012-04-03 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously |
| US7169687B2 (en) * | 2004-11-03 | 2007-01-30 | Intel Corporation | Laser micromachining method |
| JP4684697B2 (ja) * | 2005-03-22 | 2011-05-18 | 株式会社ディスコ | ウエーハ破断方法 |
| JP4751634B2 (ja) | 2005-03-31 | 2011-08-17 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US7611966B2 (en) * | 2005-05-05 | 2009-11-03 | Intel Corporation | Dual pulsed beam laser micromachining method |
| JP2006315017A (ja) | 2005-05-11 | 2006-11-24 | Canon Inc | レーザ切断方法および被切断部材 |
| US7244906B2 (en) * | 2005-08-30 | 2007-07-17 | Electro Scientific Industries, Inc. | Energy monitoring or control of individual vias formed during laser micromachining |
| JP2007277636A (ja) | 2006-04-06 | 2007-10-25 | Yamazaki Mazak Corp | レーザ焼入れ方法 |
| US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
| GB2444037A (en) | 2006-11-27 | 2008-05-28 | Xsil Technology Ltd | Laser Machining |
| JP2008166445A (ja) | 2006-12-27 | 2008-07-17 | Enzan Seisakusho Co Ltd | 半導体基板の切断方法 |
| US9029731B2 (en) | 2007-01-26 | 2015-05-12 | Electro Scientific Industries, Inc. | Methods and systems for laser processing continuously moving sheet material |
| US7817685B2 (en) | 2007-01-26 | 2010-10-19 | Electro Scientific Industries, Inc. | Methods and systems for generating pulse trains for material processing |
| JP2009049390A (ja) | 2007-07-25 | 2009-03-05 | Rohm Co Ltd | 窒化物半導体素子およびその製造方法 |
| US8729427B2 (en) | 2009-03-27 | 2014-05-20 | Electro Scientific Industries, Inc. | Minimizing thermal effect during material removal using a laser |
| JP5573192B2 (ja) * | 2010-01-22 | 2014-08-20 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
2010
- 2010-04-02 US US12/753,367 patent/US8383984B2/en active Active
-
2011
- 2011-03-31 EP EP11763453.5A patent/EP2553717B1/en not_active Not-in-force
- 2011-03-31 WO PCT/US2011/030768 patent/WO2011123673A2/en not_active Ceased
- 2011-03-31 KR KR1020127025413A patent/KR101754186B1/ko not_active Expired - Fee Related
- 2011-03-31 CN CN201180017460.XA patent/CN102844844B/zh not_active Expired - Fee Related
- 2011-03-31 JP JP2013502858A patent/JP5823490B2/ja active Active
- 2011-04-01 TW TW100111495A patent/TWI532559B/zh not_active IP Right Cessation
-
2013
- 2013-02-22 US US13/774,244 patent/US8679948B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2553717A2 (en) | 2013-02-06 |
| KR101754186B1 (ko) | 2017-07-19 |
| US20130237035A1 (en) | 2013-09-12 |
| US20110240616A1 (en) | 2011-10-06 |
| KR20130051435A (ko) | 2013-05-20 |
| WO2011123673A3 (en) | 2012-01-19 |
| CN102844844A (zh) | 2012-12-26 |
| CN102844844B (zh) | 2015-11-25 |
| JP5823490B2 (ja) | 2015-11-25 |
| EP2553717B1 (en) | 2020-05-06 |
| EP2553717A4 (en) | 2017-08-16 |
| US8679948B2 (en) | 2014-03-25 |
| JP2013524521A (ja) | 2013-06-17 |
| US8383984B2 (en) | 2013-02-26 |
| WO2011123673A2 (en) | 2011-10-06 |
| TW201201945A (en) | 2012-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI532559B (zh) | 用於易碎材料的雷射單一化的改善的方法及裝置 | |
| US8609512B2 (en) | Method for laser singulation of chip scale packages on glass substrates | |
| CN106938370B (zh) | 一种激光加工系统及方法 | |
| US10532431B2 (en) | Laser processing method | |
| US7169687B2 (en) | Laser micromachining method | |
| KR101385675B1 (ko) | 초단파 레이저 펄스 웨이퍼 스크라이빙 | |
| JP5670764B2 (ja) | レーザ加工方法 | |
| US20120175652A1 (en) | Method and apparatus for improved singulation of light emitting devices | |
| CN111085786B (zh) | 使用激光脉冲进行的材料切割 | |
| JP2013524520A (ja) | 改良されたウェハシンギュレーション方法及び装置 | |
| CN101432853A (zh) | 包含低k介电材料的工件的激光处理 | |
| JP2018523291A (ja) | 半導体加工対象物のスクライブ方法 | |
| CN103443908A (zh) | 用于光电装置的改进的激光划片方法和设备 | |
| WO2012096097A1 (ja) | レーザ加工方法 | |
| WO2012096092A1 (ja) | レーザ加工方法 | |
| WO2012096093A1 (ja) | レーザ加工方法 | |
| KR20130140706A (ko) | 최적화된 임시 파워 프로파일 및 편광을 갖는 레이저 펄스를 이용한 링크 처리 방법 및 시스템 | |
| JP6696842B2 (ja) | ウェーハの加工方法 | |
| WO2014194179A1 (en) | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths | |
| JP6952092B2 (ja) | 半導体加工対象物のスクライブ方法 | |
| HK40017511A (en) | Material cutting using laser pulses | |
| HK40017511B (zh) | 使用激光脉冲进行的材料切割 | |
| KR20130142165A (ko) | 발광 소자의 개선된 싱귤레이션 방법 및 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |